Duane Morris LLP
Cobalt/nickel bi-layer silicide process for very narrow line polysilicon gate technology
A silicide method for integrated circuit and semiconductor device fabrication wherein a layer of nickel is formed over at least one silicon region of a substrate and a layer of cobalt is formed over the nickel layer. The cobalt/nickel bi-layer is then annealed to transform the bi-layer to a bi-silicide film having a cobalt-rich silicide portion and a nickel-rich silicide portion.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Shau-Lin Chih-Wei Mong-Song Mei-Yun
Shue Chang Liang Wang