Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Semiconductor device and method of manufactuing the same
A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film having a film thickness periodically and continuously changing in a channel width direction of the non-volatile memory cell, a floating gate electrode provided on the tunnel insulating film, a control gate electrode provided above the floating gate electrode, and an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.
Kabushiki Kaisha Toshiba
H H H H H
H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional
Shigehiko Masanobu Yuji Yoshio
Saida Saito Takeuchi Ozawa