Volentine & Whitt, PLLC
Semiconductor devices having different gate dielectrics and methods for manufacturing the same
A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includes a second substrate region, a second gate electrode, and a second gate dielectric. The second gate dielectric is located between the second substrate region and the second gate electrode. The first gate dielectric includes a first high-k layer having a dielectric constant of 8 or more. Likewise, the second gate dielectric includes a second high-k layer having a dielectric constant of 8 or more. The second high-k layer has a different material composition than the first high-k layer.
Samsung Electronics Co., Ltd.
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inventional inventional
Seok-Joo Hyung-Suk Ho-Kyu Yun-Seok Jong-Ho
Doh Jung Kang Kim Lee