Semiconductor device and manufacturing method thereof
A manufacturing method of a semiconductor device includes the following steps. A plurality of select gates are formed on a memory region of a semiconductor substrate. Two charge storage structures are formed between two adjacent select gates. A source region is formed in the semiconductor substrate, and the source region is formed between the two adjacent select gates. An insulation block is formed between the two charge storage structures and formed on the source region. A memory gate is formed on the insulation block, and the memory gate is connected to the two charge storage structures.
UNITED MICROELECTRONICS CORP.
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Yi-Shan Jianjun Wen-Chuan Yuan-Hsiang Chih-Chien
Chiu Yang Chang Chang Chang