Harness, Dickey & Pierce, P.L.C.
Patterning method and a method of fabricating a semiconductor device using the same
A patterning method for fabricating a semiconductor device includes forming, for example sequentially forming, a lower buffer layer, a first channel semiconductor layer, and a capping insulating layer on a substrate, forming an opening to penetrate the capping insulating layer and the first channel semiconductor layer and expose a portion of the lower buffer layer, forming a second channel semiconductor layer to fill the opening and include a first portion protruding above the capping insulating layer, performing a first CMP process to remove at least a portion of the first portion, removing the capping insulating layer, and performing a second CMP process to remove at least a portion of a second portion of the second channel semiconductor layer protruding above the first channel semiconductor layer.
Samsung Electronics Co., Ltd.
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Sanghyun Boun Se Jung TaeYong Hoyoung Ju-Hyun Sangkyun
Park Yoon Park Kwon Kim Kim Kim