Blakely Sokoloff Taylor Zafman LLP
Local and global reduction of critical dimension (CD) asymmetry in etch processing
Local and global reduction of critical dimension (CD) asymmetry in etch processing is described. In an example, a method of etching a wafer of to form a plurality of staircase structures with reduced local and global asymmetry involves forming a photoresist layer on a plurality of micron-scale semiconductor structures. The photoresist layer is then trimmed with a high pressure and pulsed plasma etch process performed in a reverse MESA mode.
Applied Materials, Inc.
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Kang-lie Olivier Jinhan
Chiang Luere Choi