Myers Bigel, P.A.
Silicon precursor, method of forming a layer using the same, and method of fabricating semiconductor device using the same
The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.
SAMSUNG ELECTRONICS CO., LTD. DOW CORNING CORPORATION
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Younjoung Kyunghye Xiaobing JunHyun Michael David
Cho Jung Zhou Cho Telgenhoff