Nikaido, Marmelstein, Murray & Oram
Process for diffusing boron into semiconductor wafers
 In a boron diffusion process, a multiplicity of semiconductor wafers and pyrolytic boron nitride dopant disks are placed in a diffusion tube kept in an inert atmosphere at a high temperature, and boron diffusion is performed with hydrogen injection, the initial concentration of hydrogen in the diffusion tube being a very low range of 0.05% by volume at maximum. The result is that it is possible to improve dispersion of sheet resistivity (.rho.s) of the silicon wafer surface remarkably and to suppress occurrence of lattice defects. 
Shin-Etsu Handotai Co., Ltd.
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Y10S H01L C30B H01L
additional inventional inventional inventional
Yoshiyuki Eiichi Yukiharu Tomoyuki Tadayuki Masahide Nobuhiro
Mori Nishijo Kitazawa Sakai Ebe Kojima Tsuda