Slater Matsil, LLP
Semiconductor structure cutting process and structures formed thereby
Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Yu-Hsien Ryan Chia-Jen Ming-Ching Yi-Chun Li-Wei Shao-Hua Tzu-Wen Cheng-Chung
Lin Chen Chang Chen Yin Hsu Pan Chang