K & L Gates LLP
Method for forming an anti-etching shielding layer of resist patterns in semiconductor fabrication
A method is disclosed for forming a photoresist pattern with enhanced etch resistance on a semiconductor substrate. A photoresist pattern is first formed on the substrate. A silicon-containing polymer layer is deposited over the photoresist pattern on the substrate. A thermal treatment is performed to form a cross-linked anti-etch shielding layer between the photoresist pattern and the silicon-containing layer. Then, the remaining silicon containing layer is removed. A plasma treatment is performed in order to increase an etch resistance of the cross-linked anti-etch shielding layer and the photoresist pattern.
Taiwan Semiconductor Manufacturing Co., Ltd.
G
G03F
inventional
Chin-Hsiang Ching-Yu
Lin Chang