Eschweiler & Potashnik, LLC
Complementary metal-oxide-semiconductor (CMOS) image sensor
A complementary metal-oxide-semiconductor (CMOS) image sensor having a passivation layer is provided. The CMOS image sensor includes a sensing device substrate. Isolation structures are positioned within trenches of the sensing device substrate. The isolation structures are arranged along opposing sides of a plurality of image sensing devices. The CMOS image sensor also includes a passivation layer. The passivation layer includes passivation sidewalls arranged along the sidewalls of the isolation structures. A metallic grid overlies the passivation layer. The metallic grid includes a metal framework surrounding openings overlying the plurality of image sensing devices. The passivation layer further includes passivation section underlying the openings.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Sheng-Chan Zhi-Yang Cheng-Hsien Cheng-Yuan Sheng-Chau
Li Wang Chou Tsai Chen