Cooper Legal Group, LLC
Circuit arrangement for modeling transistor layout characteristics
One or more circuit arrangements and techniques for modeling are provided. In some embodiments, a circuit arrangement includes at least one of a first current source, a second current source, a first diode, a second diode, and a switching component. In some embodiments, the switching component includes a bipolar junction transistor (BJT). In some embodiments, the circuit arrangement is integrated into a metal oxide semiconductor (MOS) device. When the circuit arrangement is integrated into a MOS device, at least one of a substrate current leakage, a junction breakdown, or a diode reverse recovery (DRR) effect is predictable for the MOS device.
Taiwan Semiconductor Manufacturing Company Limited
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Chia-Ying Chung-Shi Hung-Han Run-Ci Yi-Ting Chia-Chi
Lin Chiang Lin Gao Wang Ho