Etching solution having silicon oxide corrosion inhibitor and method of using the same
Described herein is an etching solution suitable for the selective removal of polysilicon over silicon oxide from a microelectronic device, which comprises: water; at least one of a quaternary ammonium hydroxide compound; optionally at least one alkanolamine compound; a water-miscible solvent; at least one nitrogen containing compound selected from the group consisting of a C4-12 alkylamine, a polyalkylenimine, a polyamine, a nitrogen-containing heterocyclic compound, a nitrogen-containing aromatic compound, or a nitrogen-containing heterocyclic and aromatic compound; and optionally, a surfactant.
VERSUM MATERIALS US, LLC
H H C
H01L H01L C09K
inventional inventional inventional
Yi-Chia Chung-Yi Wen Dar
Lee Chang Liu