Tung & Associates
Cobalt silicide formation method employing wet chemical silicon substrate oxidation
A method for forming a cobalt silicide layer employs a sequential treatment of a silicon substrate with a hydrofluoric acid material followed by a wet chemical oxidant material. A cobalt material layer is then formed upon the sequentially treated silicon substrate and the silicon substrate/cobalt material layer laminate is thermally annealed to form a cobalt silicide layer. Use of the wet chemical oxidant material for treating the silicon substrate provides the cobalt silicide layer with enhanced electrical properties.
Taiwan Semiconductor Manufacturing Co., Ltd
H
H01L
inventional
Mei-Yun Shau-Lin Chih-Wei Ching-Hau
Wang Shue Chang Hsieh