Scully Scott Murphy and Presser
Contact etch stop layer with sacrificial polysilicon layer
A contact etch stop layer includes a nitride layer formed over a sacrificial gate structure and a polysilicon layer formed over the nitride layer. During subsequent processing, the polysilicon layer is adapted to oxidize and form an oxide layer. The oxidation of the polysilicon layer effectively shields the underlying nitride contact etch stop layer from oxidation, which protects the mechanical integrity of the nitride layer.
GLOBALFOUNDRIES INC.
H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional
Haigou Haifeng Hui Jinsheng Jinping Huy
Huang Sheng Zang Gao Liu Cao