Morrison & Foerster LLP
Parallel and selective growth method of carbon nanotube on the substrates for electronic-spintronic device applications
A selective and parallel growth method of carbon nanotube for electronic-spintronic device applications which directly grows a carbon nanotube on a wanted position toward a horizontal direction comprises the steps of: forming an insulating film on a board; forming fine patterns of catalyst metal layer including a contact electrode pad on the insulating film, forming a growth barrier layer for preventing vertical growth on upper part of the catalyst metal layer; and directly growing the carbon nanotube between the catalyst patterns.
Korea Institute of Science and Technology
B B H H C D C C Y C B H C C C
B82Y B82Y H01L H01L C30B D01F C30B C23C Y10S C23C B82Y H01L C01B C01B C30B
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Yoon Taek Yun Hi Byeong Kwon
Jang Lee Ju