Slater Matsil, LLP
Semiconductor device with shielding structure for cross-talk reduction
A method includes embedding a die in a molding material; forming a first dielectric layer over the molding material and the die; forming a conductive line over an upper surface of the first dielectric layer facing away from the die; and forming a second dielectric layer over the first dielectric layer and the conductive line. The method further includes forming a first trench opening extending through the first dielectric layer or the second dielectric layer, where a longitudinal axis of the first trench is parallel with a longitudinal axis of the conductive line, and where no electrically conductive feature is exposed at a bottom of the first trench opening; and filling the first trench opening with an electrically conductive material to form a first ground trench.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional additional additional additional additional inventional inventional additional additional additional additional additional inventional additional inventional inventional inventional inventional additional additional additional additional additional inventional additional additional additional additional inventional additional additional additional additional inventional additional additional additional additional additional
Shih-Ya Chung-Hao Chih-Yuan Chen-Hua Chuei-Tang
Huang Tsai Chang Yu Wang