Mills & Onello, LLP
Method of fabricating metal silicate layer using atomic layer deposition technique
There are provided methods of fabricating a metal silicate layer on a semiconductor substrate using an atomic layer deposition technique. The methods include performing a metal silicate layer formation cycle at least one time in order to form a metal silicate layer having a desired thickness. The metal silicate layer formation cycle includes an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon oxide layer formation cycle Q times. K and Q are integers ranging from 1 to 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, exhausting the metal source gas remaining in a reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor. The silicon oxide layer formation cycle includes supplying a silicon source gas, exhausting the silicon source gas remaining in the reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor.
Samsung Electronics Co., Ltd.
C C C
C23C C23C C23C
inventional inventional inventional
Hyung-Suk Ha-Jin Jong-Ho Jong-Ho Jae-Eun Jong-Pyo Yun-Seok
Jung Lim Lee Yang Park Kim Kim