Haynes and Boone, LLP
Etch stop layer between substrate and isolation structure
A device that includes a substrate; semiconductor fins extending from the substrate; an isolation structure over the substrate and laterally between the semiconductor fins; a liner layer between sidewalls of the semiconductor fins and the isolation structure; and an etch stop layer between the substrate and the isolation structure and laterally between the semiconductor fins. The etch stop layer includes a material different than that of the isolation structure and the liner layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Hung-Kai Ming-Chang Chang-Yun Hsien-Chin
Chen Wen Chang Lin