Tung & Associates
Microelectronic capacitor with barrier layer
Within a method for fabricating a capacitor structure and a capacitor structure fabricated employing the method, there is provided a conductor barrier layer formed upon an upper capacitor plate formed within the capacitor structure. There is also provided a silicon layer formed upon the conductor barrier layer. The conductor barrier layer and the silicon layer provide for enhanced interdiffusion stability and enhanced delamination stability with respect to the upper capacitor plate, and thus enhanced reliability and performance of the capacitor structure.
Taiwan Semiconductor Manufacturing Co., Ltd.
H
H01L
inventional
Tai Bor Wong-Cheng Chich Shang
Wu Shih Chang