Tung & Associates
Microelectronic capacitor with capacitor plate layer formed of tungsten rich tungsten oxide material
Within both a method for forming a capacitor and a capacitor formed employing the method, there is employed for forming at least part of at least one of a first capacitor plate and a second capacitor plate a tungsten rich tungsten oxide material having a tungsten:oxygen atomic ratio of from about 5:1 to about 1:1. By forming the at least part of the at least one of the first capacitor plate and the second capacitor plate of the foregoing tungsten rich tungsten oxide material, the capacitor is formed with attenuated leakage current density.
Taiwan Semiconductor Manufacturing Co., Ltd
H H
H01L H01L
additional inventional
Wong-Cheng Tai Bor Chich Shang
Shih Wu Chang