Harness, Dickey & Pierce, P.L.C.
High electron mobility transistor having reduced threshold voltage variation and method of manufacturing the same
According to example embodiments a transistor includes a channel layer on a substrate, a first channel supply layer on the channel, a depletion layer, a second channel supply layer, source and drain electrodes on the first channel supply layer, and a gate electrode on the depletion layer. The channel includes a 2DEG channel configured to generate a two-dimensional electron gas and a depletion area. The first channel supply layer corresponds to the 2DEG channel and defines an opening that exposes the depletion area. The depletion layer is on the depletion area of the channel layer. The second channel supply layer is between the depletion layer and the depletion area.
Samsung Electronics Co., Ltd.
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In-jun Jae-joon Jae-won Hyo-ji
Hwang Oh Lee Choi