Turocy & Watson, LLP
Semiconductor integrated device
According to an aspect of the present invention, there is provided a semiconductor integrated device including: a level-shifting circuit including: a first and a second input nodes; and a first and a second output nodes; a first current mirror circuit connected with the first output node; a second current mirror circuit connected with the second output node; a first switch circuit series-connected with an input-side of first current mirror circuit; a second switch circuit series-connected with an input-side of the second current mirror circuit; a fifth switching element parallel-connected with the input-side of the first current mirror circuit; and a sixths switching element parallel-connected with the input-side of the second current mirror circuit.
Kabushiki Kaisha Toshiba
H
H03K
inventional
Hideaki Tetsuya
Ito Nakamura