Eschweiler & Potashnik, LLC
Deep trench isolation fabrication for BSI image sensor
The present disclosure relates to a BSI image sensor with improved DTI structures, and an associated method of formation. In some embodiments, the BSI image sensor comprises a plurality of image sensing elements disposed within a substrate corresponding to a plurality of pixel regions. A deep trench isolation (DTI) grid is disposed between adjacent image sensing elements and extending from an upper surface of the substrate to positions within the substrate. The DTI grid comprises air-gaps disposed under the upper surface of the substrate, the air-gaps having lower portions surrounded by a first dielectric layer and some upper portions sealed by a second dielectric layer.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H H H H H H
H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional
Yen-Ting Shih Pei Hsiao-Hui Sheng-Chan Ching-Chun Chih-Hui Shyh-Fann Dun-Nian
Chiang Chou Tseng Li Wang Huang Ting Yaung