Eschweiler & Potashnik, LLC
Electro-migration barrier for Cu interconnect
The present disclosure, in some embodiments, relates to a method of forming an integrated circuit device. The method may be performed by forming a conductive line over a substrate and in contact with a liner. A dielectric barrier layer is formed on the conductive line. The dielectric barrier layer includes an interfacial layer contacting the conductive line, a middle layer contacting the interfacial layer, and an upper layer contacting the middle layer. The interfacial layer and the liner collectively completely surround the conductive line. An inter-level dielectric layer is formed along sidewalls of the upper layer.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chia-Ho Su-Jen Chih-Chiang
Chen Sung Chang