Alston & Bird LLP
Method for forming fins of semiconductor device
A method for forming fins of Fin FETs is provided. A patterning process on the second sidewalls forms a type-one second sidewalls and a type-two second sidewalls, the type-one second sidewalls are arranged next to each other and sandwiched between a pair of type-two second sidewalls on one side and another pair of type-two second sidewalls on another side, followed by an etching to remove the pairs of the type-two second sidewalls from both sides of the type-one second sidewall. The type-two second sidewalls adjacent to the two sides of the type-one second sidewalls are not pattern-transferred to a to-be-patterned layer, after the fin patterns on the to-be-patterned layer are formed, patterns corresponding to the type-two second sidewalls are etched away through a rough removal process.
SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION
H H
H01L H01L
inventional inventional
Yong
Li