Withrow & Terranova, PLLC
Ferroelectric-modulated Schottky non-volatile memory
Ferroelectric-modulated Schottky non-volatile memory is disclosed. A resistive memory element is provided that is based on a semiconductive material. Metal elements are formed on a semiconductive material at two places such that two semiconductor-metal junctions are formed. The semiconductive material with the two semiconductor-metal junctions establishes a composite resistive element having a resistance and functions as a relatively fast switch with a relatively low forward voltage drop. Each metal element may couple a terminal to the resistive element. To provide a resistive element capable of being a resistive memory element to store distinctive memory states, a ferroelectric material is provided and disposed adjacent to the semiconductive material to create an electric field from a ferroelectric dipole. The orientation of the ferroelectric dipole changes the resistance of the resistive element to allow it to function as a resistive memory element.
QUALCOMM Incorporated
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inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Jeffrey Junhao Xia Seung Hyuk
Xu Li Kang