Anova Law Group, PLLC
N-type fin field-effect transistor and fabrication method thereof
The present disclosure provides N-type fin field-effect transistors and fabrication methods thereof. A method for fabricating an N-type fin field-effect transistor includes providing a semiconductor substrate; forming at least one fin having a first side surface and a second side surface over the semiconductor substrate; forming a gate structure crossing over the fin over the semiconductor substrate; performing an ion implantation process on one of the first side surface and the second side surface of the fin at two sides of the gate structure; performing a thermal annealing process to cause doping ions to diffuse to the other one of the first side surface and the second side surface of the fin; and forming a source region and a drain region on the fin at the two sides of the gate structure, respectively.
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
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Yong
Li