Armstrong & Kubovcik
Semiconductor integrated circuit device and method of producing same
 A semiconductor integrated circuit device comprising a negative differential resistance element, such as an RHET and RBT, and a field effect transistor, such as an SBFET and heterojunction type FET, which are formed on the same semiconductor substrate, a base layer of the negative differential resistance element and a channel layer of the field effect transistor being formed on the same epitaxial layer, and the same conductive material is used to simultaneously form an emitter electrode and a gate. A monolithic integration of both the element and transistor can be achieved both rationally and easily. 
Fujitsu Limited
H H B
H01L H01L B82Y
inventional inventional inventional
Toshihiko
Mori