Ohlandt, Greeley, Ruggiero & Perle, L.L.P.
Organocopper precursors for chemical vapor deposition
The present invention provides a copper precursor according to the formula (R3COOCR2COR1)Cu+1{L}x, where x is 1, 2 or 3 and L is a neutral ligand. The precursors in the present invention, which are low melting solids or distillable liquids with high volatility and thermal stability, can be vaporized without decomposition and used to deposit high quality copper films. The improved stability of the copper compounds in the present invention enables them to reproducibly produce selective copper films on metallic or electrically conductive surfaces.
C C C C C
C07F C07F C23C C07F C07F
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Hyungsoo
Choi