Oblon, McClelland, Maier & Neustadt, L.L.P.
Method for producing nitride single crystal
A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.
TOHOKU UNIVERSITY THE JAPAN STEEL WORKS, LTD. MITSUBISHI CHEMICAL CORPORATION
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C30B C30B C30B C30B
inventional inventional inventional inventional
Makoto Chiaki Quanxi Shigefusa Yuji Tohru Daisuke Mutsuo Rinzo
Saito Yokoyama Bao Chichibu Kagamitani Ishiguro Tomida Ueda Kayano