Schwegman, Lundberg, Woessner & Kluth, P.A.
Field-effect transistor for one-time programmable nonvolatile memory element
 A least one one-time programmable nonvolatile (NV) memory element uses a field-effect transistor (FET) as a selectively programmed element. A short duration applied drain voltage exceeding the FET's drain-to-source breakdown voltage results in a drain source resistance which is substantially unaffected by the voltages typically applied at the gate terminal. Since the programmed resistance is less than 200 ohms and a high programming voltage is not required, the present invention compares favorably with antifuse nonvolatile memory techniques. The nonvolatile memory element is implemented without adding complexity to a very large scale integrated (VLSI) circuit process. 
Micron Technology, Inc.
H Y
H01L Y10S
inventional additional
Manny K. F. Wen Rajesh
Ma Li Somasekharan