Myers Bigel Sibley & Sajovec, P.A.
Methods of manufacturing a semiconductor device including a dielectric layer including zirconium
A method of manufacturing a semiconductor device can include forming a tunnel oxide layer on a substrate, forming a floating gate on the tunnel oxide layer and forming a dielectric layer pattern on the floating gate using an ALD process. The dielectric layer pattern can include a metal precursor that includes zirconium and an oxidant. A control gate can be formed on the dielectric layer pattern. The semiconductor device can include the dielectric layer pattern provided herein.
Samsung Electronics Co., Ltd.
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Han-Mei Sung-Tae Seung-Hwan Cha-Young Young-Sun Ki-Yeon Kyoung-Ryul
Choi Kim Lee Yoo Kim Park Yoon