Method for fabricating P-channel field-effect transistor (FET)
A method for fabrication a p-type channel FET includes forming a gate on a substrate. Then, a PAI ion implantation process is performed. Further, a pocket implantation process is conducted to form a pocket region. Thereafter, a first co-implantation process is performed to define a source/drain extension region depth profile. Then, a p-type source/drain extension region is formed. Afterwards, a second co-implantation process is performed to define a source/drain region depth profile. Thereafter, an in-situ doped epitaxy growth process is performed to form a doped semiconductor compound for serving as a p-type source/drain region.
United Microelectronics Corp.
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Meng-Yi Shyh-Fann Cheng-Tung Li-Shian Kun-Hsien Wen-Han Tzyy-Ming
Wu Ting Huang Jeng Lee Hung Cheng