Marshall, Gerstein & Borun LLP
Method for fabricating a semiconductor device
An exposure mask for recess gate includes a transparent substrate and a recess gate pattern. The recess gate pattern is disposed over the transparent substrate. The recess gate pattern includes a first portion having a first line width and a second portion having a second line width smaller than the first line width. In the second portion, elements of the recess gate pattern are separated.
Hynix Semiconductor Inc.
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Yong Soon
Jung