Gibb I.P. Law Firm, LLC
Structure and method for reducing threshold voltage variation
A structure comprises at least one transistor on a substrate, an insulator layer over the transistor, and an ion stopping layer over the insulator layer. The ion stopping layer comprises a portion of the insulator layer that is damaged and has either argon ion damage or nitrogen ion damage.
International Business Machines Corporation
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inventional inventional additional additional additional additional
Huilong Yanfeng Daewon Huajie
Zhu Wang Yang Chen