Multiple-gate transistors and processes of making same
A microelectronic device includes a P-I-N (p+ region, intrinsic semiconductor, and n+ region) semiconductive body with a first gate and a second gate. The first gate is a gate stack disposed on an upper surface plane, and the second gate accesses the semiconductive body from a second plane that is out of the first plane.
Intel Corporation
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Ravi Marko Benjamin Jack
Pillarisetty Radosavljevic Chu-Kung Kavalieros