Duane Morris LLP
Method to improve photomask critical dimension uniformity and photomask fabrication process
A method of fabricating a photomask having improved critical dimension (CD) uniformity that meets or exceeds 90 nanometer technology requirements. The method includes the steps of: providing a transparent substrate covered with a layer of opaque material and a layer of photoresist; patterning the layer of photoresist to expose an area of the layer of opaque material that has a shape that follows a contour of a main pattern area to be defined by the layer of opaque material; removing the exposed area to define the layer of opaque material into the main pattern area and an area that surrounds the main pattern area; removing the patterned layer of photoresist; and removing the surrounding area of the layer of opaque material.
Taiwan Semiconductor Manufacturing Company, Ltd.
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additional inventional
Shih-Ming Chi-Lun Hung-Chang Chih-Chen Wen-Chuan Sheng-Chi
Chang Lu Hsieh Chin Wang Chin