Lowe Hauptman Ham & Berner LLP
Semiconductor device having recess gate
A semiconductor device having a recess gate includes a semiconductor substrate having a recess, a conductive pattern for a gate electrode filled into the recess, and having an extension portion protruding higher than a surface of the semiconductor substrate, an epitaxial semiconductor layer having a top surface disposed over the semiconductor substrate, and a gate insulating layer disposed between the epitaxial semiconductor layer and the conductive pattern, and between the semiconductor substrate and the conductive pattern. Further, a method of fabricating the same is disclosed.
Hynix Semiconductor Inc.
H H H H
H01L H01L H01L H01L
inventional inventional inventional inventional
Young-Kyun
Jung