JCIPRNET
Method of manufacturing dynamic random access memory
A method of manufacturing a DRAM includes isolation structures and word line sets are formed in the substrate. A conductive material is formed on the substrate. Conductive material is removed to form first openings in the conductive material. The first openings expose surfaces of the substrate in the first areas and divide the conductive material into conductive layers, thereby the conductive layers are located on surfaces of the substrate in the second areas. A first dielectric material is filled in the first openings so as to form first dielectric layers on the substrate in the first areas. Top surfaces of the conductive layers are lower than top surfaces of the first dielectric layers. Second dielectric layers are formed respectively in the conductive layers. Capacitors are formed respectively on the conductive posts.
Winbond Electronics Corp.
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Huang-Nan Wei-Che Kazuaki
Chen Chang Takesako