Plasma pretreatment of photoresist in an oxide etch process
 A photoresist plasma pretreatment performed prior to a plasma oxide etch. The plasma pretreatment is performed with an argon plasma or a carbon tetrafluoride and trifluoromethane plasma with lower power than in the main etch or is performed with a plasma of difluoromethane or trifluoromethane and carbon monoxide but no argon diluent gas. Thereby, striations on the oxide wall are reduced. 
Appllied Materials, Inc.
H H
H01L H01L
inventional inventional
Takehito Roger A. Yunsang Ajey M. Bryan Y. Hongqing Henry
Komatsu Lindley Kim Joshi Pu Shan Fong