Westerman, Hattori, Daniels & Adrian, LLP
Methods of making a ferroelectric memory device having improved interfacial characteristics
The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a first ferroelectric film on a first conductive film by a film-forming method including at least a step of forming a film by a sol-gel method; forming a second ferroelectric film on the first ferroelectric film by a sputtering method; forming a second conductive film on the second ferroelectric film; and forming a capacitor provided with a lower electrode, a capacitor dielectric film and an upper electrode by patterning the first conductive film, the first and second ferroelectric films and the second conductive film.
Fujitsu Semiconductor Limited
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Yoshimasa Wensheng
Horii Wang