McDermott Will & Emery LLP
FinFET semiconductor device having fins with stronger structural strength
A semiconductor device including at least one fin disposed on a surface of a semiconductor substrate is provided. The fin includes a main portion extending along a first direction, and at least one secondary portion extending outward from the main portion along a second direction not collinear with the first direction.
NATIONAL CHIAO-TUNG UNIVERSITY TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chao-Hsin Chen-Han Cheng-Ting Samuel C.
Chien Chou Chung Pan