Jianq Chyun IP Office
Dynamic random access memory apparatus
The present invention provides a dynamic random access memory apparatus includes a first chip and a second chip. The first chip includes a plurality of memory cells and a plurality of through-silicon vias (TSVs). The plurality of memory cells are arranged in an array. First terminals of the TSVs are respectively coupled to the memory cells. The first chip and the second chip are overlapped, the second chip includes a plurality storage capacitors. Second terminals of the TSVs are respectively coupled to the storage capacitors storage capacitors.
Nanya Technology Corporation
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inventional inventional inventional
Wen-Ming Chuan-Jen
Lee Chang