JCIPRNET
Method of fabricating resistive memory
Provided is a method of fabricating a resistive memory including forming a first electrode and a second electrode opposite to each other; forming a variable resistance layer between the first electrode and the second electrode; forming an oxygen exchange layer between the variable resistance layer and the second electrode; and forming a protection layer at least covering sidewalls of the oxygen exchange layer.
Winbond Electronics Corp.
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Frederick Po-Yen Chih-Cheng Ting-Ying Chia-Hua
Chen Hsu Fu Shen Ho