Slater & Matsil, L.L.P.
Profile design for lateral-vertical bipolar junction transistor
A lateral-vertical bipolar junction transistor (LVBJT) includes a well region of a first conductivity type over a substrate; a first dielectric over the well region; and a first electrode over the first dielectric. A collector of a second conductivity type opposite the first conductivity type is in the well region and on a first side of the first electrode, and is adjacent the first electrode. An emitter of the second conductivity type is in the well region and on a second side of the first electrode, and is adjacent the first electrode, wherein the second side is opposite the first side. A collector extension region having a lower impurity concentration than the collector adjoins the collector and faces the emitter. The LVBJT does not have any emitter extension region facing the collector and adjoining the emitter.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Hua-Chou Chih-Ping Shuo-Mao Chih-Sheng
Tseng Chao Chen Chang