Thomas, Kayden, Horstemeyer & Risley
Method for forming a semiconductor device
A method for forming a semiconductor device is described. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN barrier is conformably formed in the opening, at a thickness less than 20 Å. A copper layer is formed over the atomic layer deposited (ALD) TaN barrier to fill the opening.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Shau-Lin Chao-Hsien Chih-Wei Gin Jei Chii-Ming
Shue Peng Chang Wang Wu