Method of forming ultra thin silicon oxynitride for gate dielectric applications
A method of forming a gate dielectric layer is disclosed. The method comprises the following steps. A substrate is provided having silicon regions containing surfaces upon which gate dielectrics are to be disposed. An oxide is formed over the surfaces. A silicon layer is formed over the oxide layer. A nitridation process is performed. An optional high temperature annealing step may be performed.
Chartered Semiconductor Manufacturing Ltd.
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Hwa Weng Dong Kyun Liang Choo Jinping
Koh Sohn Hsia Liu