Ladas & Parry LLP
Embedded phase-change memory and method of fabricating the same
An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.
Electronics and Telecommunications Research Institute
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Byoung-Gon Nam-Yeal Young Sam Seung-Yun Sangouk Kyu-Jeong Sung Min
Yu Lee Park Lee Ryu Choi Yoon