Westerman, Hattori, Daniels & Adrian, LLP.
Method of manufacturing semiconductor device
The present invention provides a method of manufacturing a semiconductor device. The method includes the steps of forming a first interlayer insulating film over a silicon substrate; forming a first conductive film on the first interlayer insulating film; forming a first ferroelectric film, which is crystallized, on the first conductive film; annealing the first ferroelectric film; after the annealing, forming, on the first ferroelectric film, a second ferroelectric film made of an amorphous material or a microcrystalline material; forming a second conductive film on the second ferroelectric film; and forming a capacitor by patterning the first and second conductive films and the first and second ferroelectric films.
Fujitsu Microelectronics Limited
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Masaaki Wensheng Katsuyoshi
Nakabayashi Wang Matsuura