Haynes and Boone, LLP
Resistive switching random access memory with asymmetric source and drain
A resistive random access memory (RRAM) structure includes a resistive memory element formed on a semiconductor substrate. The resistive element includes a top electrode, a bottom electrode, and a resistive material layer positioned between the top electrode and the bottom electrode. The RRAM structure further includes a field effect transistor (FET) formed on the semiconductor substrate, the FET having a source and a drain. The drain has a zero-tilt doping profile and the source has a tilted doping profile. The resistive memory element is coupled with the drain via a portion of an interconnect structure.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Hsia-Wei Kuo-Chi Chih-Yang Wen-Ting Yu-Wen Chin-Chieh
Chen Tu Chang Chu Liao Yang