Oliff PLC
Semiconductor device and method of manufacturing the same
The method of manufacturing a semiconductor device according to the present invention includes: a step of forming a semiconductor laminate on a growth substrate with a lift-off layer therebetween; a step of providing grooves in a grid pattern in the semiconductor laminate, thereby forming a plurality of semiconductor structures each having a nearly quadrangular transverse cross-sectional shape; a step of forming a conductive support body; and a step of removing the lift-off layer using a chemical lift-off process, in which step, in supplying an etchant to the grooves via through-holes provided in a portion above the grooves, the lift-off layer is etched from only one side surface of each semiconductor structure.
DOW ELECTRONICS MATERIALS CO., LTD. BBSA LIMITED
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Seog Woo Yoshitaka Ryuichi Meoung Whan
Lee Kadowaki Toba Cho