The Marbury Law Group, PLLC
Spin-transfer torque MRAM with a negative magnetic anisotropy assist layer and methods of operating the same
A MRAM device includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a negative-magnetic-anisotropy assist layer having negative magnetic anisotropy that provides an in-plane magnetization within a plane that is perpendicular to the fixed magnetization direction, and a first nonmagnetic spacer layer located between the free layer and the negative-magnetic-anisotropy assist layer.
SANDISK TECHNOLOGIES LLC
H G H H G H G H G H H H
H01F G11C H01F H01L G11C H01L G11C H01F G11C H01L H01L H01F
inventional additional inventional inventional additional inventional additional inventional inventional inventional inventional inventional
Quang Michael Zhigang Paul Zhanjie
Le Ho Bai Vanderheijden Li