Pillsbury Madison & Sutro LLP
Semiconductor sensor having suspended thin-film structure and method for fabricating thin-film structure body
 A semiconductor sensor having a thin-film structure body, in which thin-film structure is prevented from bending due to the internal stress distribution in the thickness direction, is disclosed. A silicon-oxide film is formed as a sacrificial layer on a silicon substrate, and a polycrystalline-silicon thin film is formed on the silicon-oxide film. Thereafter, phosphorus (P) is ion-implanted in the surface of the polycrystalline-silicon thin film, and thereby the surface state of the polycrystalline-silicon thin film is modified. A portion of distribution of stress existing in the thickness direction of the polycrystalline-silicon thin film is changed by this modification, and stress distribution is adjusted. By removal of the silicon-oxide film, a movable member of the polycrystalline-silicon thin film is disposed above the silicon substrate with a gap interposed therebetween. 
Nippondenso Co., Ltd
B B B G B G G B
B81B B81C B81C G01P B81C G01P G01P B81C
inventional inventional additional inventional additional additional inventional additional
Nobuyuki Kenichi Kazuhiko Yoshinori Kenichi Yoshitaka Toshimasa
Kato Ao Kano Ohtsuka Nara Gotoh Yamamoto