Kilpatrick Townsend & Stockton LLP
ESD protection device and method
An ESD protection device includes a substrate structure having a substrate, first and second fins, and first and second doped regions having different conductivity types. The first doped region includes a first portion of the substrate and a first region of the first fin, the second doped region includes a second portion of the substrate, a second region of the first fin adjacent to the first region and the second fin. The ESD device also includes a first gate structure on a surface portion of the first region and a surface portion of the second region of the first fin and including, from bottom to top, an interface layer on the surface portion of the first region and the surface portion of the second region of the first fin, a spacer, a high-k dielectric layer, a first work-function adjusting layer, a second work-function adjusting layer, and a gate.
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
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Yong
Li