Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials
In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursor compounds that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films as ferroelectric materials using the formulations.
Versum Materials US, LLC
H H C H C H C C C H H C H H H H H C C C C
H01L H01L C23C H01L C23C H01L C23C C23C C23C H01L H01L C23C H01L H01L H01L H01L H01L C23C C23C C23C C23C
inventional additional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional additional inventional additional additional inventional inventional inventional inventional inventional
Moo-Sung Se-Won Matthew R Xinjian
Kim Lee MacDonald Lei