Harness, Dickey & Pierce, PLC
Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof
In the method for manufacturing a semiconductor substrate, a concavity and a connecting hole for connecting the concavity to the outside are formed on a lower face side of a first substrate, and the first substrate is laminated with a second substrate in an atmosphere at atmospheric pressure. A diaphragm is formed by thinning the first substrate from its upper face by polishing. A sealing hole reaching to the connecting hole is formed from the upper face of the first substrate. An oxide film is formed in the sealing hole in a vacuum, whereby the connecting hole is sealed while the pressure of the pressure reference chamber is reduced to a vacuum. In this way, since the pressure reference chamber is pressure-reduced in a final stage, the diaphragm can be prevented from deforming due to pressure difference during polishing.
Denso Corporation
B G G B
B81C G01L G01L B81C
additional inventional inventional inventional
Inao Masakazu Minekazu Toshimasa Eishi Kenichi Yasutoshi
Toyoda Terada Sakai Yamamoto Kawasaki Yokoyama Suzuki