Burns, Doane, Swecker & Mathis
Growth method of gallium nitride film
A method of growing a high quality gallium nitride (GaN) film at a high growth rate, which is used in homoepitaxy blue laser diodes or electronic devices. In the GaN film growth method, a bare sapphire substrate is nitridated in a reactor, and then sequentially exposed to a surface pretreatment with a gas mixture of ammonia (NH3) and hydrochloric acid (HCl), and an additional nitridation. The obtained GaN film has a mirror surface with slight roughness.
Samsung Electronics Co., Ltd.
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C30B H01L H01L C30B H01L H01L H01L
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Seong-kuk
Lee