Semiconductor device and manufacturing method thereof
The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, an epitaxial structure, and a recess. The epitaxial structure is disposed in the substrate. The recess is formed in the epitaxial structure, where the recess has a cross-section in a direction perpendicular to the substrate, and at least one portion of the recess is gradually expanded from an opening of the recess.
UNITED MICROELECTRONICS CORP.
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Che-Wei Shih-Hsien Chih-Chieh Tzu-I
Chang Huang Yeh Tsai