Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device
Described herein is an etching solution comprising water, phosphoric acid solution (aqueous), and a hydroxyl group-containing solvent. Such compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.
VERSUM MATERIALS US, LLC
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C23F H01L C03C H01L C23F C09K C23F C09K H01L
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Yi-Chia Wen Dar
Lee Liu