Scully, Scott, Murphy & Presser, P.C.
Dielectric spacer removal
The present invention relates to semiconductor devices, and more particularly to a process and structure for removing a dielectric spacer selective to a surface of a semiconductor substrate with substantially no removal of the semiconductor substrate. The method of the present invention can be integrated into a conventional CMOS processing scheme or into a conventional BiCMOS processing scheme. The method includes forming a field effect transistor on a semiconductor substrate, the FET comprising a dielectric spacer and the gate structure, the dielectric spacer located adjacent a sidewall of the gate structure and over a source/drain region in the semiconductor substrate; depositing a first nitride layer over the FET; and removing the nitride layer and the dielectric spacer selective to the semiconductor substrate with substantially no removal of the semiconductor substrate.
International Business Machines Corporation
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Richard Michelle L. Mark T. Xi Eduard A. Ying Vamsi Renee T. Sivananda Rashmi Vijay Kathryn T.
Wise Steen Robson Li Cartier Zhang Paruchuri Mo Kanakasabapathy Jha Narayanan Schonenberg