Frishauf, Holtz, Goodman & Woodward
Memory device using thin film transistors having an insulation film with Si/N composition ratio of 0.85 to 1.1
 A memory device includes a memory element composed of a first thin film transistor having a memory function, and a select element composed of a second thin film transistor for selecting the memory element. A gate insulation film of the first thin film transistor has a charge storage function. A gate insulation film of the second thin film transistor does not have any charge storage function. If a plurality of the memory devices are arranged in matrix form, this configuration can be used as E.sup.2 PROM. By forming the first and second thin film transistors simultaneously, it is possible to form the first and second thin film transistors easily in the simple manufacturing steps. 
Casio Computer Co., Ltd.
H
H01L
inventional
Hiroshi Hiroyasu Nobuyuki Hideaki Haruo
Matsumoto Yamada Yamamura Shimizu Wakai