Slater and Matsil, L.L.P.
Parasitic capacitance extraction for FinFETs
A method includes generating a three-dimensional table. The table cells of the three-dimensional table comprise normalized parasitic capacitance values selected from the group consisting essentially of normalized poly-to-fin parasitic capacitance values and normalized poly-to-metal-contact parasitic capacitance values of Fin Field-Effect Transistors (FinFETs). The three-dimensional table is indexed by poly-to-metal-contact spacings of the FinFETs, fin-to-fin spacings of the FinFETs, and metal-contact-to-second-poly spacings of the FinFETs. The step of generating the three-dimensional table is performed using a computer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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H01L H01L G06F H01L G06F
additional additional inventional additional inventional
Ke-Ying Hsien-Hsin Sean Hsiao-Shu Chia-Ming Yi-Kan Ze-Ming
Su Lee Chao Ho Cheng Wu