Duane Morris LLP
Method to avoid amorphous-si damage during wet stripping processes in the manufacture of MEMS devices
A method for forming a MEMS device using an amorphous silicon layer as a release layer includes etching superjacent films and using the amorphous silicon layer as an etch stop layer. The amorphous silicon layer is resistant to attack during the post-etch solvent stripping operation due to the oxidation of exposed portions of the amorphous silicon layer by use of an oxygen plasma.
Taiwan Semiconductor Manufacturing Co., Ltd.
B H H
B81C H01L H01L
inventional inventional inventional
Yuan-Ko Yuh-Hwa Shuh-Shun Fei-Yun Yuan-Pang Ni-Hwi
Hwang Chang Chen Chen Lee Kuan