Jones Day
Memories with metal-ferroelectric-semiconductor (MFS) transistors
A method includes applying a first voltage to a first source line of a memory, applying a second voltage to a second source line of the memory, turning on an access transistor of a memory cell of the memory, and performing one of a write operation or a read operation on a metal-ferroelectric-semiconductor (MFS) transistor of the memory cell. Memories on which the method is performed are also disclosed.
Taiwan Semiconductor Manufacturing Company Limited
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inventional inventional inventional
Yun-Sheng Yu-Der Chun-Jung
Chen Chih Lin