Birch, Stewart, Kolasch & Birch, LLP
Fin field effect transistor device structure and method for forming the same
A fin field effect transistor device structure includes a fin structure formed over a substrate. The structure also includes a gate structure formed across the fin structure. The structure also includes a cap layer formed over the gate structure. The structure also includes a contact structure formed over the gate structure penetrating through the cap layer. The structure also includes an isolation film formed over sidewalls of the contact structure. The isolation film is separated from the gate structure, and a bottom surface of the isolation film is below a top surface of the cap layer.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Lin-Yu Li-Zhen Yu-Ming Chih-Hao Cheng-Chi Chia-Hao
Huang Yu Lin Wang Chuang Chang