Lowe Hauptman Ham & Berner, LLP
Double patterning strategy for contact hole and trench in photolithography
A method of lithography patterning includes forming a hard mask layer on a material layer and forming a capping layer on the hard mask layer. The capping layer does not react with oxygen gas during a photoresist ashing process. The capping layer is patterned by using a first resist pattern and a second resist pattern as etch masks. After the capping layer is patterned, the hard mask layer is patterned by using the patterned capping layer as an etch mask.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Yu-Yu Hsin-Yi Ming-Chung Chih-Hao
Chen Tsai Liang Chen