Harness, Dickey & Pierce, P.L.C.
High electron mobility transistor
A high electron mobility transistor (HEMT) according to example embodiments includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a reverse diode gate structure on the second semiconductor layer. A source and a drain may be on at least one of the first semiconductor layer and the second semiconductor layer. A gate electrode may be on the reverse diode gate structure.
Samsung Electronics Co., Ltd.
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In-jun Jae-joon Hyo-ji Jong-bong Jae-won
Hwang Oh Choi Ha Lee