Haynes and Boone, LLP
Method of forming contact metal
A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Hsien-Lung Chun-Hsien Hong-Mao Yu-Kai Wei-Jung
Yang Huang Lee Chen Lin