Schwabe, Williamson & Wyatt, P.C.
Fabrication of non-planar IGZO devices for improved electrostatics
Embodiments of the invention include non-planar InGaZnO (IGZO) transistors and methods of forming such devices. In an embodiment, the IGZO transistor may include a substrate and source and drain regions formed over the substrate. According to an embodiment, an IGZO layer may be formed above the substrate and may be electrically coupled to the source region and the drain region. Further embodiments include a gate electrode that is separated from the IGZO layer by a gate dielectric. In an embodiment, the gate dielectric contacts more than one surface of the IGZO layer. In one embodiment, the IGZO transistor is a finfet transistor. In another embodiment the IGZO transistor is a nanowire or a nanoribbon transistor. Embodiments of the invention may also include a non-planar IGZO transistor that is formed in the back end of line stack (BEOL) of an integrated circuit chip.
Intel Corporation
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Ashish Benjamin Marko Van H. Rafael Gilbert Marc C. Jack T. Ryan E. Kent E.
Agrawal Chu-Kung Radosavljevic Le Rios Dewey French Kavalieros Arch Millard