WPAT, P.C., Intellectual Property Attorneys
Image sensing device and manufacturing method thereof
Some embodiments of the present disclosure provide a method of manufacturing a back side illuminated (BSI) image sensor. The method includes receiving a semiconductive substrate; forming a photosensitive element at a front side of the semiconductive substrate; forming a transistor coupled to the photosensitive element; forming a recess at a back side of the semiconductive substrate; forming a first dielectric layer lining to a side portion of the recess and over the back side of the semiconductor substrate; covering a conductive material over the first dielectric layer and filling in the recess; forming a conductive column on top of the recess by patterning the conductive material; and forming a second dielectric layer covering the conductive column and the first dielectric layer.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Tsung-Han Volume Kuo-Cheng Yun-Wei Chun-Hao Yung-Lung
Tsai Chien Lee Cheng Chou Hsu