Cantor Colburn LLP
Method and structure for forming multiple self-aligned gate stacks for logic devices
A method for forming multiple self-aligned gate stacks, the method comprising, forming a first group of gate stack layers on a first portion of a substrate, forming a second group of gate stack layers on a second portion of the substrate adjacent to the first portion of the substrate, etching to form a trench disposed between the first portion and the second portion of the substrate, and filling the trench with an insulating material.
International Business Machines Corporation Advanced Micro Devices, Inc. (AMD)
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H01L H01L
inventional inventional
Werner A. Robin Bruce B. Mahender
Rausch Van Den Nieuwenhuizen Doris Kumar