IP & T Group LLP
Semiconductor device with metal gate and high-k dielectric layer, CMOS integrated circuit, and method for fabricating the same
A semiconductor device includes a gate dielectric layer over a substrate, a metal layer over the gate dielectric layer, a capping layer over the metal layer, wherein the capping layer includes a plurality of dipole forming elements concentrated at the interface between the metal layer and the capping layer.
SK Hynix Inc.
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Seung-Mi Beom-Yong Yun-Hyuck
Lee Kim Ji