Lorez & Kopf, LLP
MTJ structures, STT MRAM structures, and methods for fabricating integrated circuits including the same
Magnetic tunnel junction (MTJ) structures, spin transfer torque magnetic random access memory (STT MRAM) structures, and methods for fabricating integrated circuits including such structures are provided. In an embodiment, an MTJ structure includes a cobalt iron carbon (CoFeC) fixed reference layer. Further, the MTJ structure includes a cobalt iron carbon (CoFeC) free storage layer. Also, the MTJ structure includes a tunnel barrier layer between the fixed reference layer and the free storage layer.
Globalfoundries Singapore Pte. Ltd.
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Jingsheng Shaohai Francis YongWee Danny PakChum
Chen Chen Poh Shum