Birch, Stewart, Kolasch & Birch, LLP
Semiconductor structure and high electron mobility transistor with a substrate having a pit, and methods for fabricating semiconductor structure
A semiconductor device includes a substrate, a flowable dielectric material and a GaN-based semiconductor layer. The substrate has a pit exposed from an upper surface of the substrate, the flowable dielectric material fully fills the pit, and the GaN-based semiconductor layer is disposed over the substrate and the flowable dielectric material.
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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Cheng-Wei Szu-Yao Yung-Fung Hsiu-Ming Cheng-Tao
Chou Chang Lin Chen Chou