Birch, Stewart, Kolasch & Birch, LLP
Method of fabricating semiconductor device including dummy via anchored to dummy metal layer
A method includes depositing a first dielectric layer over a substrate; forming a first dummy metal layer over the first dielectric layer, wherein the first dummy metal layer has first and second portions laterally separated from each other; depositing a second dielectric layer over the first dummy metal layer; etching an opening having an upper portion in the second dielectric layer, a middle portion between the first and second portions of the first dummy metal layer, and a lower portion in the first dielectric layer, wherein a width of the lower portion of the opening is greater than a width of the middle portion of the opening, and a bottom of the opening is higher than a bottom of the first dielectric layer; and forming a dummy via in the opening and a second dummy metal layer over the dummy via and the second dielectric layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Yih-Ching Hsin-Chun Jian-Hong Kuo-Yen Yu-Ching Tzu-Li
Wang Chang Lin Liu Lee Lee