Harrington & Smith
Atomic layer deposition with plasma source
The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.
Picosun OY
H H C C H C H C C B H
H01J H01J C23C C23C H01L C23C H01J C23C C23C B05C H01J
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Sven Timo Juhana Wei-Min Vaino
Lindfors Malinen Kostamo Li Kilpi