Scully, Scott, Murphy & Presser, P.C.
Structure and method for manufacturing planar strained Si/SiGe substrate with multiple orientations and different stress levels
The present invention provides a method of forming a semiconducting substrate including the steps of providing an initial structure having first device region comprising a first orientation material and a second device region having a second orientation material; forming a first concentration of lattice modifying material atop the first orientation material; forming a second concentration of the lattice modifying material atop the second orientation material; intermixing the first concentration of lattice modifying material with the first orientation material to produce a first lattice dimension surface and the second concentration of lattice modifying material the second orientation material to produce a second lattice dimension surface; and forming a first strained semiconducting layer atop the first lattice dimension surface and a second strained semiconducting layer atop the second lattice dimension surface.
International Business Machines Corporation
H H H Y H
H01L H01L H01L Y10S H01L
inventional inventional inventional additional additional
Philip J. Meikei Bruce B. Min Huilong Huajie
Oldiges Ieong Doris Yang Zhu Chen