Haynes and Boone, LLP
Bottom-up material formation for planarization
The present disclosure provides a method for planarization. The method includes providing a substrate having a top surface and a trench recessed from the top surface; coating a sensitive material layer on the top surface of the substrate, wherein the sensitive material layer fills in the trench; performing an activation treatment to the sensitive material layer so that portions of the material layer are chemically changed; and performing a wet chemical process to the sensitive material layer so that top portions of the sensitive material layer above the trench are removed, wherein remaining portions of the sensitive material layer have top surfaces substantially coplanar with the top surface of the substrate.
TAIWAN SEMICONDUCTOR MANUFACTURING CO,, LTD.
G H H H H H H G H H G
G03F H01L H01L H01L H01L H01L H01L G03F H01L H01L G03F
inventional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional
Cheng-Han Ming-Hui Ching-Yu Chin-Hsiang
Wu Weng Chang Lin