Fish & Richardson P.C.
Method for manufacturing semiconductor device
A transistor including a semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator is manufactured by forming a hard mask layer including a fourth conductor over the second insulator, a third insulator over the fourth conductor, forming an opening portion in the second insulator with the hard mask layer as the mask, eliminating the hard mask layer by forming the opening portion, and forming the first insulator and the first conductor in the opening portion.
Semiconductor Energy Laboratory Co., Ltd.
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Satoru Shinya Motomu Akihisa Katsuaki
Okamoto Sasagawa Kurata Shimomura Tochibayashi