Thompson Hine LLP
Nanosheet field-effect transistors including a two-dimensional semiconducting material
Structures for a field-effect transistor and methods of forming structures for a field-effect transistor. A plurality of channel layers are arranged in a layer stack, and a source/drain region is connected with the plurality of channel layers. A gate structure includes a plurality of sections that respectively surround the plurality of channel layers. The plurality of channel layers contain a two-dimensional semiconducting material.
GLOBALFOUNDRIES Inc.
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Ruilong Juntao Nicolas Kangguo Julien
Xie Li Loubet Cheng Frougier