Magnetic tunnel junction device
A magnetic tunnel junction device includes a Synthetic Anti-Ferromagnetic (SAF) layer, a first free layer, and second free layer. The magnetic tunnel junction device further includes a spacer layer between the first and second free layers. The first free layer is magneto-statically coupled to the second free layer. A thickness of the spacer layer is at least 4 Angstroms.
QUALCOMM Incorporated
H H H H H
H01L H01L H01L H01L H01L
additional inventional inventional inventional inventional
Seung Hyuk Xiaochun Kangho Xia
Kang Zhu Lee Li