Stanzione & Kim, LLP
Magnetic memory device and method of fabricating the same
A magnetic memory device and a method of fabricating the same. The magnetic memory device includes a free layer, a write element, and a read element. The write element changes the magnetization direction of the free layer, and the read element senses the magnetization direction of the free layer. Herein, the write element includes a current confinement layer having a width smaller than the minimum width of the free layer to locally increase the density of a current flowing through the write element.
SAMSUNG Electronics Co., Ltd.
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G11C G11C H01L G11C H01L
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Jun-ho Se-Chung Woo-Jin Dae-Kyom Seung-Yeol Jang-Eun Kyung-Tae
Jeong Oh Kim Kim Lee Lee Nam