Nixon Peabody LLP
Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
A thin film transistor with favorable electric characteristics is provided. The thin film transistor includes a gate electrode, a gate insulating layer, a semiconductor layer which includes a microcrystalline semiconductor region and an amorphous semiconductor region, an impurity semiconductor layer, a wiring, a first oxide region provided between the microcrystalline semiconductor region and the wiring, and a second oxide region provided between the amorphous semiconductor region and the wiring, wherein a line tangent to the highest inclination of an oxygen profile in the first oxide region (m1) and a line tangent to the highest inclination of an oxygen profile in the second oxide region (m2) satisfy a relation of 1<m1/m2<10, on the semiconductor layer side from an intersection of a profile of an element included in the wiring and a profile of an element included in the semiconductor layer.
Semiconductor Energy Laboratory Co., Ltd.
H H H H H
H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional
Motomu Hiekazu Asami Shinya
Kurata Miyairi Tadokoro Sasagawa