WPAT, P.C., Intellectual Property Attorneys
Resistive random access memory and manufacturing method thereof
One embodiment in the present disclosure provides a resistor in a resistive random access memory (RRAM). The resistor includes a first electrode; a resistive layer on the first electrode; an electric field enhancement array in the resistive layer; and a second electrode on the resistive layer. The electric field enhancement array includes a plurality of electric field enhancers arranged in a same plane. One embodiment in the present disclosure provides a method of manufacturing a resistor structure in an RRAM. The method comprises (1) forming a first resistive layer on a first electrode; (2) forming a metal layer on the resistive layer; (3) patterning the metal layer to form a metal dot array on the resistive layer; and (4) forming a second electrode on the metal dot array. The metal dot array comprises a plurality of metal dots, and a distance between adjacent metal dots is less than 40 nm.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Wen-Ting Chih-Ming Wen-Chun Chih-Yang Chin-Chieh Kuo-Chi Sheng-Hung Hsia-Wei Yu-Wen
Chu Chen You Chang Yang Tu Shih Chen Liao