Manufacturing method of dual gate oxide semiconductor TFT substrate and substrate thereof
A method for manufacturing a dual gate oxide semiconductor TFT substrate utilizes a halftone mask to implement a photo process, which not only accomplishes patterning to an oxide semiconductor layer but also obtains an oxide conductor layer with ion doping. The method implements patterning to a bottom gate isolation layer and a top gate isolation layer at the same time with one photolithographic process. The method implements patterning to second and third metal layers at the same time to obtain a first source, a first drain, a second source, a second drain, a first top gate and a second top gate with one photolithographic process. The method implements patterning to a second flat layer, a passivation layer and a top gate isolation layer at the same time with one photolithographic process. The number of photolithographic processes involved is reduced to nine so as to simplify the manufacturing process.
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
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Shimin Xiaowen Chihyu Longqiang Hejing Chihyuan Wenhui
Ge Lv Su Shi Zhang Tseng Li