WPAT, P.C., Intellectual Property Attorneys
Semiconductor device and manufacturing method for the semiconductor device
The present disclosure provides a semiconductor device, including a substrate, a fin over the substrate, a multilayer gate dielectric stack over the fin, wherein the multilayer gate dielectric stack includes a first ferroelectric layer, and a first dielectric layer coupled to the first ferroelectric layer, and a gate over the multilayer gate dielectric stack.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Chi On Te-Yang Sai-Hooi Chun-Yen Chih-Yu Bo-Feng
Chui Lai Yeong Peng Chang Young