Birch, Stewart, Kolasch & Birch, LLP
Semiconductor device structure having air gap and method for forming the same
A semiconductor device structure is provided. The semiconductor device structure includes a first gate structure and a second gate structure formed over a semiconductor substrate. The semiconductor device structure also includes a first insulating cap structure formed between and adjacent to the first gate structure and the second gate structure. The first insulating cap structure is separated from the semiconductor substrate by a first air gap. The first air gap includes a first portion extending into the first insulating cap structure and a second portion extended from the bottom of the first portion toward the semiconductor substrate. The first portion has a width that is less than the width of the second portion.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chia-Hao Chia-Lin Yu-Ming Cheng-Chi Chih-Hao
Chang Chuang Lin Chuang Wang