Eschweiler & Potashnik, LLC
Top electrode for device structures in interconnect
Some embodiments relate to an integrated circuit device, which includes a bottom electrode, a dielectric layer, and top electrode. The dielectric layer is disposed over the bottom electrode. The top electrode is disposed over the dielectric layer, and an upper surface of the top electrode exhibits a recess. A via is disposed over the top electrode. The via makes electrical contact with only a tapered sidewall of the recess without contacting a bottom surface of the recess.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chih-Yang Chin-Chieh Yu-Wen Wen-Chun Wen-Ting Sheng-Hung Kuo-Chi Hsia-Wei
Chang Yang Liao You Chu Shih Tu Chen