Method of manufacturing a capacitor in a semiconductor memory device
 A method of manufacturing a capacitor in a semiconductor device such as a semiconductor memory is disclosed in which a tantalum layer is oxidized to form a tantalum oxide layer. A preferred embodiment of the disclosed method includes the steps of depositing doped polysilicon on a semiconductor substrate to form a node electrode, oxidizing the polysilicon node electrode to form a silicon oxide layer, depositing tantalum by way of a sputtering process, performing an annealing and oxidation process to form tantalum oxide and depositing polysilicon to form a plate electrode. According to the present invention, TaCl.sub.5 is not used as a solid source, and contamination can be reduced. 
Goldstar Electron Co., Ltd.
H
H01L
inventional
Jeong-Su Seung-Hee
Han Lee