Slater Matsil, LLP
Semiconductor device and method of manufacture
A method of forming a gas spacer in a semiconductor device and a semiconductor device including the same are disclosed. In accordance with an embodiment, a method includes forming a gate stack over a substrate; forming a first gate spacer on sidewalls of the gate stack; forming a second gate spacer on sidewalls of the first gate spacer; removing the second gate spacer using an etching process to form a first opening, the etching process being performed at a temperature less than 0° C., the etching process using an etching solution including hydrogen fluoride; and depositing a dielectric layer over the first gate spacer and the gate stack, the dielectric layer sealing a gas spacer in the first opening.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Cheng-Chung Ming-Jhe Shao-Hua Ryan Chia-Jen An Chyi Shiang-Bau Shu-Uei Chen-Huang
Chang Sie Hsu Chen Wei Wang Jang Huang