McClure, Qualey & Rodack, LLP
Mechanisms for forming radio frequency (RF) area of integrated circuit structure
A method for forming a radio frequency area of an integrated circuit are provided. The method includes forming a buried oxide layer over a substrate, and an interface layer is formed between the substrate and the buried oxide layer. The method also includes etching through the buried oxide layer and the interface layer to form a deep trench, and a bottom surface of the deep trench is level with a bottom surface of the interface layer. The method further includes forming an implant region directly below the deep trench and forming an interlayer dielectric layer in the deep trench.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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inventional inventional inventional inventional
Chih-Ping Wei-Kung Kuo-Yu Keng-Yu Kuan-Chi Chun-Hung Chung-Long Tsung-Yu
Chao Tsai Cheng Chen Tsai Chen Chang Yang