Innovation Counsel LLP
Precursor composition of oxide semiconductor and thin film transistor substrate including oxide semiconductor
A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratioof indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratioof indium (In) of the metals in the semiconductor layer is about 5% to about 13%.
Samsung Display Co., Ltd.
H H H H H
H01L H01L H01L H01L H01B
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Chan Woo Eun Hye Doo Hyoung Seung-Ho Bo Sung Doo Na June Whan
Yang Park Lee Jung Kim Kim Choi