Cantor Colburn LLP
Asymmetrical vertical transistor
A method of fabricating asymmetric vertical field effect transistors (VFETs) includes forming mandrels above a substrate comprising a first semiconductor material. A first set of spacers is formed adjacent to each side of the mandrels, and trenches are formed in portions of the substrate that are not below one of the mandrels or one of the first set of spacers. The method also includes filling the trenches with a second semiconductor material that is different from the first semiconductor material and forming a second set of spacers adjacent to each respective one of the first set of spacers. The second set of spacers is above the second semiconductor material. A plurality of fins is formed such that each one of the plurality of fins includes a portion of the substrate and a portion of the second semiconductor material. Gates are formed between each adjacent pair of fins.
INTERNATIONAL BUSINESS MACHINES CORPORATION
H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional inventional inventional inventional inventional inventional inventional inventional inventional
Kangguo Juntao Peng Zhenxing
Cheng Li Xu Bi