Oblon, McClelland, Maier & Neustadt, L.L.P.
Oxide semiconductor compound, semiconductor element provided with layer of oxide semiconductor compound, and laminated body
An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.
AGC Inc. TOKYO INSTITUTE OF TECHNOLOGY
H H H H C C H C H H H H H C
H01L H01B H01L H01L C23C C23C H01L C23C H01L H01L H01L H01L H01L C23C
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Junghwan Toshio Hideya Nobuhiro Satoru Naomichi Hideo
Kim Kamiya Kumomi Nakamura Watanabe Miyakawa Hosono