Harness, Dickey & Pierce, P.L.C.
CMP slurry composition for polishing an organic layer and method of forming a semiconductor device using the same
A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.
Samsung Electronics Co., Ltd.
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Kwang-Bok Choong-Ho Yun-Jeong Jung-Sik Sang-Kyun Gi-Sik Ye-Hwan
Kim Han Kim Choi Kim Hong Kim