Volentine & Whitt, PLLC
Method of fabricating semiconductor device including forming epitaxial blocking layers by nitridation process
A method of fabricating a semiconductor device includes forming gate structures on PMOS and NMOS transistor regions of the semiconductor substrate, forming epitaxial blocking layers on source/drain regions of PMOS and NMOS transistor regions using a nitridation process, then selectively removing one of the epitaxial blocking layers, and using a SEG process to form an epitaxial layer on respective source/drain regions while shielding the other source/drain regions with a remaining epitaxial blocking layer.
Samsung Electronics Co., Ltd.
H H
H01L H01L
inventional inventional
Jung-Chan Byung-Suk Seung-Jae Yu-Gyun Dae-Young
Lee Jung Lee Shin Kwak