Jones Day
Memory repair scheme
Memory devices and methods of repairing a memory are provided. A first array includes normal memory cells, and a second array includes repair memory cells. The repair memory cells are configured to be used in place of the normal memory cells. A look-up table comprises memory bitcells configured to store a set of entries including addresses of defective memory cells of the normal memory cells. A match circuit is configured to evaluate whether an input memory address is stored as a defective address in the memory bitcells. The match circuit is also configured to generate a selection signal for selecting the normal memory cells or the repair memory cells based on the evaluation.
Taiwan Semiconductor Manufacturing Company Limited
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G11C G06F G11C G11C G11C G11C
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Yu-Der Chia-Fu Yi-Chun Yu-Lin Po-Hao
Chih Lee Shih Chen Lee