Rosenberg, Klein & Lee
Method of producing gallium nitride-based III-V Group compound semiconductor device
 The present invention proposes a method of producing a gallium nitride-based III-V Group compound semiconductor device. First, beryllium ions are diffused into the p-type layer of gallium nitride to increase hole mobility. Contacts are then added in subsequent procedures, thereby forming contacts having low-impedance ohmic contact layers. 
Arima Optoelectronics Corp.
H Y
H01L Y10S
inventional additional
Ying Che Weng Ming
Sung Liu