Cantor Colburn LLP
Stress enhanced junction engineering for latchup SCR
A latchup silicon controlled rectifier (SCR) includes a p+ region and an n+ region located in a p-well of the latchup SCR; and a p+ region and an n+ region located in a n-well of the latchup SCR, wherein the latchup SCR further comprises one of embedded silicon germanium (eSiGe) in the p+ region in the n-well of the latchup SCR and silicon carbide (SiC) in the n+ region in the p-well of the latchup SCR.
International Business Machines Corporation
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H01L H01L H01L
inventional inventional inventional
Robert J. Junjun Rahul John B.
Gauthier, Jr. Li Mishra Campi