Anova Law Group, PLLC
Fin-FET devices and fabrication methods thereof
A method for fabricating a Fin-FET device includes providing a base structure and a plurality of fin structures protruding from the base structure. Along a direction perpendicular to the surface of the base structure and from the bottom to the top of each fin structure, the width of the fin structure perpendicular to the length direction of the fin structure decreases. The method further includes forming a gate structure on the base structure across each fin structure and covering a portion of top and sidewall surfaces of the fin structure, and removing a portion of the fin structure on each side of the gate structure to form a trench in the fin structure. Along the length direction of the fin structure, the bottom width of the trench is smaller than the top width of the trench. The method also includes filling each trench with a doped source/drain epitaxial layer.
Semiconductor Manufacturing International (Beijing) Corporation Semiconductor Manufacturing International (Shanghai) Corporation
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Li