Tutunjian & Bitetto, P.C.
Stacked nanosheets with self-aligned inner spacers and metallic source/drain
Semiconductor devices include vertically stacked channel layers formed from a semiconductor material. A metallic interface layer is formed between metal source/drain regions and the vertically stacked channel layers. The metallic interface layer includes the semiconductor material and a metal. A gate stack is formed between and around the channel layers.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Kangguo Choonghyun Juntao
Cheng Lee Li