Method for forming a junction region of a semiconductor device
A method for forming a junction region of a semiconductor device is disclosed. The steps of the method include providing a semiconductor substrate. A gate structure is formed on the semiconductor substrate. A dopant is implanted into the semiconductor substrate to form the junction region. An insulator layer is formed on the gate structure and the semiconductor substrate. A carbon-containing plasma treatment is performed to the insulator layer. A spacer is formed on a side-wall of the gate structure and the dopant is implanted into the semiconductor substrate to form a source/drain region next to the junction region. A heat treatment is performed to the semiconductor substrate.
United Microelectronics Corp.
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Neng-Hui Chin-Cheng Hsiang-Ying Yu-Kun
Yang Chien Wang Chen