Reed Smith LLP
Semiconductor device
This invention provides a semiconductor device in which an ESD protection circuit and a termination circuit can be realized with a small die area. A PMOS transistor having an ESD protection function is placed between a signal node on a line from an signal terminal to an input buffer and a supply voltage node. Furthermore, a voltage generator circuit is placed to supply a reference voltage to the gate of the PMOS transistor. By the reference voltage controlled by the voltage generator circuit, a source drain resistance of the PMOS transistor is set. Thereby, the PMOS transistor can be made to function as a terminating resistor whose resistance can be set adaptively to a characteristic impedance of a transmission line, for example, connected to the signal terminal in addition to the ESD protection function.
Hitachi, Ltd.
H H
H03F H01L
inventional inventional
Hiroki Masayoshi Tatsuya
Yamashita Yagyu Kawashimo