Amerson Law Firm, PLLC
Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
One method disclosed herein includes forming a sacrificial gate structure comprised of upper and lower sacrificial gate electrodes, performing at least one etching process to define a patterned upper sacrificial gate electrode comprised of a plurality of trenches that expose a portion of a surface of the lower sacrificial gate electrode and performing another etching process through the patterned upper sacrificial gate electrode to remove the lower sacrificial gate electrode and a sacrificial gate insulation layer and thereby define a first portion of a replacement gate cavity that is at least partially positioned under the patterned upper sacrificial gate electrode.
GLOBALFOUNDRIES Inc.
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Andy C. Ruilong Ajey Poovannummoottil Qi Xiuyu Michael
Wei Xie Jacob Zhang Cai Hargrove