Method for removing damaged layer embedded in a dielectric layer
A method for fabricating semiconductor device includes the steps of: forming an inter-metal dielectric (IMD) layer on a substrate; forming a trench in the IMD layer; performing a treatment process to transform part of the IMD layer into a damaged layer adjacent to the trench; forming a protective layer on a sidewall of the damaged layer; forming a metal layer in the trench; and removing the damaged layer to form an air gap adjacent to the protective layer.
UNITED MICROELECTRONICS CORP.
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Chih-Sheng Yuan-Fu Min-Shiang
Chang Ko Hsu