Townsend and Townsend and Crew LLP
Flash memory device with stacked dielectric structure including zirconium oxide and method for fabricating the same
A dielectric structure disposed between a floating gate and a control gate of a flash memory device includes: a first dielectric layer; a third dielectric layer having a k-dielectric constant substantially the same as that of the first dielectric layer; and a second dielectric layer disposed between the first dielectric layer and the third dielectric layer, having a greater k-dielectric constant than that of the first and third dielectric layers and formed by alternately and repeatedly stacking a plurality of aluminum oxide (Al2O3) layers and a plurality of zirconium oxide (ZrO2) layers.
Hynix Semiconductor Inc.
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Seung-Ryong Moon-Sig
Lee Joo