NSIP Law
Semiconductor device and manufacturing method thereof
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes: a deep trench in a substrate; a sidewall insulating film on a side surface of the deep trench; an interlayer insulating film on the sidewall insulating film; and an air gap in the interlayer insulating film.
Magnachip Semiconductor, Ltd.
H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L
additional inventional additional inventional inventional additional inventional additional
Da Soon Gil Ho Jeong Gyu Hyun Tae Meng An Woo Sig Pil Seung Hyung Suk
Lee Lee Park Jung Jung Min Kang Choi