Lee IP Law, P.C.
Semiconductor device
A semiconductor device including an insulating layer on a substrate; channel semiconductor patterns stacked on the insulating layer and vertically spaced apart from each other; a gate electrode crossing the channel semiconductor patterns; source/drain regions respectively at both sides of the gate electrode and connected to each other through the channel semiconductor patterns, the source/drain regions having concave bottom surfaces; and air gaps between the insulating layer and the bottom surfaces of the source/drain regions.
SAMSUNG ELECTRONICS CO., LTD.
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Moon Seung Jongryeol Seung Mo Eunhye Jungtaek
Yang Yoo Kang Choi Kim