IP & T Group LLP
Method for growing single crystal silicon carbide ingot having large diameter
A method in which a carbonaceous protective film is formed on a rear surface of a single crystal SiC seed, the seed is placed in a reaction container without adhesion, and then single crystal SiC is grown from a SiC raw material on a front surface of the seed allows the seed to grow to a single crystal ingot having a large diameter since the absence of adhesion of the seed to a holder prevents the generation of warps or cracks attributed to a difference in thermal expansion coefficient between the seed and the holder during heating.
Senic Inc.
C C
C30B C30B
inventional inventional
Jung-Gyu Kap-Ryeol Jung Woo
Kim Ku Choi