Anova Law Group, PLLC
FinFET device
A fin field effect transistor (FinFET) device is provided. The device includes a fin protruding from a semiconductor substrate and a gate structure on the semiconductor substrate across a length portion of the fin and covering a portion of a top and sidewalls of the fin. Grooves are formed in the fin on both sides of the gate structure. A doped region is formed on a bottom and sidewalls of each groove. A portion of the doped regions which are close to the gate structure on the both sides forms the lightly doped source/drain region. An epitaxial layer is formed on the doped region in each groove. The lightly doped source/drain region is formed between the epitaxial layer and the gate structure.
Semiconductor Manufacturing International (Beijing) Corporation Semiconductor Manufacturing International (Shanghai) Corporation
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Yong
Li