Duane Morris LLP
Fast sense amplifier with bit-line pre-charging
A bit-line of a resistive memory cell includes a reference branch including a reference resistor having a predetermined value and a cell branch including an adjustable memory resistor having a variable value. The reference branch generates a reference current based on the predetermined value of the reference resistor and the cell branch generates a cell branch current based on a selected value of the adjustable memory resistor. A sense amplifier has a first input coupled to the reference branch and a second input coupled to the cell branch. A first pre-charge transistor is coupled to a first pre-charge voltage and the cell branch. The first pre-charge transistor is configured to pre-charge the cell branch to the first pre-charge voltage prior to a read operation.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chung-Cheng
Chou