Harness, Dickey & Pierce, P.L.C.
Program and erase methods for nonvolatile memory
Methods of programming or erasing a nonvolatile memory device having a charge storage layer including performing at least one unit programming or erasing loop, each unit programming or erasing loop including applying a programming pulse, an erasing pulse, a time delay, a soft erase pulse, soft programming pulse and/or a verifying pulse as a positive or negative voltage to a portion (for example, a word line or a substrate) of the nonvolatile memory device.
Samsung Electronics Co., Ltd.
G
G11C
inventional
Jungdal Seunghyun Kihwan Jaesung
Choi Moon Choi Sim