Foley & Lardner LLP
Semiconductor device and method of manufacturing the same
A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.
TOSHIBA MEMORY CORPORATION
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Shinji Yuta Kazuhiro Keiichi Hiroyuki Kazuhisa
Mori Saito Matsuo Sawa Yamashita Matsuda