Mills & Onello LLP
Method of manufacturing a semiconductor device
In a method of manufacturing a semiconductor device, a device including gate electrodes and asymmetric source and drain regions is formed by employing a semiconductor layer structure. The short channel effect is prevented in the resulting device even though the gate electrodes are of a dimension on the order of nanometers. Additionally, the gate electrodes and asymmetric source and drain regions of the semiconductor device may be precisely formed to have dimensions on the nanometer scale because a semiconductor layer structure is used in the process for manufacturing the semiconductor device.
Samsung Electronics, Co., Ltd.
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Choong-Ryul Hee-Sung Jin-Hua
Ryou Kang Liu