Horizon IP Pte Ltd
Strained channel transistor structure and method
A transistor device structure comprising: a substrate portion formed from a first material; and a source region, a drain region and a channel region formed in said substrate, the source and drain regions comprising a plurality of islands of a second material different from the first material, the islands being arranged to induce a strain in said channel region of the substrate.
Chartered Semiconductor Manufacturing, Ltd.
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Jin Ping Mei Sheng Liang Choo Alex K H
Liu Zhou Hsia See