Method for manufacturing TFT substrate and TFT substrate manufactured thereof
The invention provides a method for manufacturing a TFT substrate and a TFT substrate manufactured thereof. In the above TFT substrate, the low temperature poly-silicon layer is produced by solid phase crystallization, the cost of production is under budget, and the TFT substrate is a double-grid structure that can guarantee the electrical characteristics of the thin film transistor and better the capacity of drive, and leakage phenomenon caused by groove light seldom happens.
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
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Yuanchun Xingyu
Wu Zhou