Barrier slurry for low-k dielectrics
The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises silica, a compound selected from the group consisting of an amine-substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, and an imidazolium salt, a carboxylic acid having seven or more carbon atoms, an oxidizing agent that oxidizes a metal, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
Cabot Microelectronics Corporation
C H
C09K H01L
inventional inventional
Pankaj Shoutian Steven Jeffrey
Singh Li Grumbine Dysard