Kubovcik & Kubovcik
Manufacturing method of silicon wafer
An active layer side silicon wafer is heat-treated in an oxidizing atmosphere to thereby form a buried oxide film therein. The active layer side silicon wafer is then bonded to a supporting side wafer with said buried oxide film interposed therebetween thus to fabricate an SOI wafer. Said oxidizing heat treatment is carried out under a condition satisfying the following formula:[Oi]≦2.123×1021exp(−1.035/k(T+273)),where, T is a temperature of the heat treatment, and [Oi] (atmos/cm3) is an interstitial oxygen concentration.
Sumitomo Mitsubishi Silicon Corporation
Y H H H H C C
Y10S H01L H01L H01L H01L C30B C30B
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Masataka Shigeru Masakazu Shinichiro
Hourai Umeno Sano Miki