Jones Day
Circuits and methods for detecting write operation in resistive random access memory (RRAM) cells
Circuits and methods for detecting write operation and limiting cell current in resistive random access memory (RRAM or ReRAM) cells are provided. RRAM cells can include a select transistor and a programmable resistor. Current can flow through the programmable resistor responsive to word line voltage VWL applied to the gate of the select transistor and a bit line voltage VBL applied to the source of the select transistor. Responsive to the current, the programmable resistor can change between relatively high and low resistances (“SET”), or between relatively low and high resistances (“RESET”). It can be desirable to accurately characterize the resistance of the programmable resistor, that is, to accurately detect write operations such as SET or RESET. Additionally, it can be undesirable for the current to exceed a certain value (“over-SET”). The present circuits and methods can facilitate detecting write operations or limiting current, or both, in an RRAM cell.
Taiwan Semiconductor Manufacturing Company Limited
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Yi-Chun Chung-Cheng Po-Hao
Shih Chou Lee