Lewis Roca Rothgerber Christie LLP
Nanosheet and nanowire devices having source/drain stressors and methods of manufacturing the same
A method of manufacturing a nanosheet or nanowire device from a stack including an alternating arrangement of sacrificial layers and channel layers on a substrate. The method includes deep etching portions of the stack to form electrode recesses for a source electrode and a drain electrode, forming conductive passivation layers in the electrode recesses, and epitaxially growing the source and drain electrodes in the electrode recesses. Each conductive passivation layer extends at least partially along a side of one of the electrode recesses. Portions of the substrate at lower ends of the electrode recesses are uncovered by the conductive passivation layers. The source and drain electrodes are grown from the substrate and the conductive passivation layers substantially inhibit the source and drain electrodes from being grown from the channel layers.
Samsung Electronics Co., Ltd.
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Wei-E Mark S. Jorge A.
Wang Rodder Kittl