Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Field effect transistor
A field effect transistor including a gate insulation portion, an organic semiconductor portion, a source electrode and a drain electrode, wherein when a voltage is applied to the gate at 70° C. for 5.0±0.1 hours so that the field strength in the gate insulation portion would be 100±5 MV/m, the change in the threshold voltage is within 5 V. The organic semiconductor portion has a high driving stability, of which the change in characteristics by driving is thereby small.
Mitsubishi Chemical Corporation
H H H H Y H H H H H Y
H01L H01L H01L H01L Y10T H01L H01L H01L H01L H01L Y10T
additional additional inventional additional additional inventional additional additional inventional additional additional
Yoshimasa Akira Shinji Ryuichi
Sakai Ohno Aramaki Yoshiyama