Pillsbury Madison & Sutro LLP
Electrodes for p-type group III nitride compound semiconductors
 An electrode for a Group III nitride compound semiconductor having p-type conduction that has a double layer structure. The first metal electrode layer comprising, for example, nickel (Ni) and the second metal electrode layer comprising, for example, gold (Au). The Ni layer is formed on the Group III nitride compound semiconductor having p-type conduction, and the Au layer is formed on the Ni layer. Heat treatment changes or reverses the distribution of the elements Ni and Au. Namely, Au is distributed deeper into the Group III nitride compound semiconductor than is Ni. As a result, the resistivity of the electrode is lowered and its ohmic characteristics are improved as well as its adhesive strength. 
Toyoda Gosei Co., Ltd.
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inventional additional inventional inventional
Junichi Takahiro Tomohiko Takeshi Toshiya Naoki Makoto
Umezaki Kozawa Mori Ohwaki Uemura Shibata Asai