Thomas, Kayden, Horstemeyer & Risley
Low temperature polysilicon manufacturing process
 A low temperature polysilicon manufacturing method. A system for performing physical vapor deposition is used to form an amorphous silicon film with micro-crystals therein. The amorphous silicon film is annealed at a temperature between 400.degree. C. to 500.degree. C. for about 6 to 16 hours to form a polysilicon film. The polysilicon film can be further processed into a low-temperature polysilicon film transistor. 
United Microelectronics Corp.
H H
H01L H01L
inventional inventional
Ting-Chang Du-Zen Chun-Yen
Chang Peng Chang