Foley & Lardner LLP
Nitride semiconductor light emitting element
A nitride semiconductor light emitting element configured to emit deep ultraviolet light, the light emitting element comprises: an n-side contact layer comprising Al, Ga, and N; and an n-electrode disposed on the contact layer, wherein the n-electrode comprises, successively from the n-side contact layer side, a first layer consisting essentially of Ti, a second layer consisting essentially of a Si-containing Al alloy, and a third layer comprising at least one of a layer consisting essentially of Ta and/or a layer consisting essentially of W.
NICHIA CORPORATION
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Takumi
Otsuka