Myers Bigel Sibley & Sajovec
Methods of forming MIM type capacitor structures using low temperature plasma processing
Methods of forming metal-insulator-metal type capacitors in integrated circuit memory devices can include crystallizing an HfO2 dielectric layer on a lower electrode of a capacitor structure in a low temperature plasma treatment at a temperature in range between about 250 degrees Centigrade and about 450 degrees Centigrade. An upper electrode can be formed on the HfO2 dielectric layer.
Samsung Electronics Co., Ltd.
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Jung-hee Cha-young Jae-hyoung Sung-tae Se-hoon Jeong-sik
Chung Yoo Choi Kim Oh Choi