Haynes Beffel & Wolfeld LLP
Hot carrier generation and programming in NAND flash
A memory device is described that includes a three-dimensional array of memory cells having a plurality of levels of memory cells accessed by a plurality of word lines, and a plurality of bit lines. Control circuitry is coupled to the plurality of word lines and the plurality of bit lines. The control circuitry is adapted for programming a selected memory cell in a selected level of the array and on a selected word line, by hot carrier generation assisted FN tunneling, while inhibiting disturb in unselected memory cells in unselected levels and in the selected level and on unselected word lines by self-boosting.
Macronix International Co. Ltd.
G G
G11C G11C
inventional inventional
Hang-Ting Kuo-Pin Chih-Shen Wen-Wei
Lue Chang Chang Yeh