Roberts Mlotkowski Safran Cole & Calderon, P.C.
Electrostatic discharge devices with reduced capacitance
The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge structures with reduced capacitance and methods of manufacture. The structure includes: a plurality of fin structures provided in at least one N+ type region and at least one P+ region; and a plurality of gate structures disposed over the plurality of fin structures and within the at least one N+ type region and one P+ region, the plurality of gate structures being separated in a lengthwise direction between the at least one N+ type region and the least one P+ region.
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You Mickey Robert J. Alain F. Tsung-Che Souvick
Li Yu Gauthier, Jr. Loiseau Tsai Mitra