Haynes and Boone, LLP
Fin field effect transistor
A method of fabricating a fin field effect transistor (FinFET) including forming a first insulation region and a second insulation region and fin there between. The method further includes forming a gate stack over a portion of the fin and over a portion of the first and second insulation regions. The method further includes tapering the top surfaces of the first and second insulation regions not covered by the gate stack.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Shu-Tine Hung-Ming Hung-Ta Shin-Yeh Chu-Yun
Yang Chen Lin Huang Fu