Kilpatrick Townsend & Stockton LLP
Resistive memory device capable of preventing disturbance and method for manufacturing the same
A resistive memory device capable of preventing disturbance is provided. The resistive memory device includes a lower electrode formed on a semiconductor substrate, a variable resistor disposed on the lower electrode, an upper electrode disposed on the variable resistor, and an interlayer insulating layer configured to insulate the variable resistor. The interlayer insulating layer may include an air-gap area in at least a portion thereof.
SK hynix Inc.
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Myoung Sub Seung Yun Hae Chan Se Ho Jung Won Sung Bin
Kim Lee Park Lee Seo Hong