Slater & Matsil, L.L.P.
Voids in STI regions for forming bulk FinFETs
An integrated circuit structure includes a substrate; two insulation regions over the substrate, with one of the two insulation regions including a void therein; and a first semiconductor strip between and adjoining the two insulation regions. The first semiconductor strip includes a top portion forming a fin over top surfaces of the two insulation regions.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Tsung-Lin Hung-Ming Chang-Yun Feng
Lee Chen Chang Yuan