The Marbury Law Group PLLC
Three dimensional NAND device and method of making thereof
A monolithic three dimensional NAND string includes a semiconductor channel, at least one end part of the semiconductor channel extending substantially perpendicular to a major surface of a substrate and a plurality of control gate electrodes extending substantially parallel to the major surface of the substrate. The NAND string also includes a memory film located between the semiconductor channel and the plurality of control gate electrodes and a blocking dielectric containing a plurality of clam-shaped portions each having two horizontal portions connected by a vertical portion. The NAND string also includes a plurality of discrete cover silicon oxide segments located between the memory film and each respective clam-shaped portion of the blocking dielectric containing a respective control gate electrode. Each of the plurality of cover silicon oxide segments has curved upper and lower sides and substantially straight vertical sidewalls.
SANDISK TECHNOLOGIES INC.
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Rahul Sateesh Senaka Wei George Yanli Raghuveer S.
Sharangpani Koka Kanakamedala Zhao Matamis Zhang Makala