Baker & McKenzie LLP
Methods to improve photonic performances of photo-sensitive integrated circuits
Described is a light-directing feature formed in the inter-level dielectric (ILD) layer in combination with an anti-reflective (AR) layer to effectively and simultaneously increase quantum efficiency and cross-talk immunity thereby improving photonic performances of photo-sensitive integrated circuits. A plurality of photosensor cells is formed on a semiconductor substrate. An AR layer is subsequently formed on the plurality of photosensor cells, the AR layer being substantially non-reflective of incident light. An ILD layer is then formed over the AR layer, the ILD layer comprising a plurality of light-directing features formed in openings in the ILD layer over the AR layer above and about certain of the plurality of photosensor cells.
Taiwan Semiconductor Manufacturing Company, Ltd.
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inventional additional inventional inventional
Ching-Sen Kuo-Yin Shih-Chi Jieh-Jang Chia-Shiung Feng-Jia Yuan-Hung
Kuo Lin Fu Chen Tsai Shiu Liu