Fleshner & Kim, LLP
Methods of fabricating semiconductor devices with barrier layers
The present invention relates to semiconductor device and a fabricating methods thereof which enable to improve device characteristics such as threshold voltage and the like by preventing p type impurities doping a gate from penetrating into a channel region of a substrate through a SiO2 layer. The present invention also relates to preventing transconductance due to reciprocal reaction of traps from decreasing by re-oxidation, wherein a first and a second oxynitride layer are formed at a first interface between a SiO2 layer and a gate of p-doped polysilicon and a second interface between the SiO2 layer and a silicon substrate, respectively.
Hyundai Electronics Industries Co., Ltd.
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Seok-Woo
Lee