Green, Howard & Mughal LLP
Methods and apparatus to form silicon-based transistors on group III-nitride materials using aspect ratio trapping
Methods and apparatus to form silicon-based transistors on group III-nitride materials using aspect ratio trapping are disclosed. An example integrated circuit includes a group III-nitride substrate and a fin of silicon formed on the group III-nitride substrate. The integrated circuit further includes a first transistor formed on the fin of silicon and a second transistor formed on the group III-nitride substrate.
Intel Corporation
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Marko Sansaptak Han Wui
Radosavljevic Dasgupta Then