Tutunjian & Bitetto, P.C.
Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy
Described herein is a FinFET device in which epitaxial layers of semiconductor material are formed in the source/drain regions on dielectrically isolated fin portions. The fin portions are located within a dielectric layer that is deposited on a semiconductor substrate. Surfaces of the fin portions are oriented in the {100} lattice plane of the crystalline material of the fin portions, providing for good epitaxial growth. Further described are methods for forming the FinFET device.
International Business Machines Corporation
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Juntao Kangguo
Li Cheng