Myers Bigel & Sibley, P.A.
Semiconductor device having fin-type field effect transistor and method of manufacturing the same
A semiconductor device includes a substrate having a first region and a second region, a first MOS transistor including a first fin structure and a first gate electrode in the first region, the first fin structure having a first buffer pattern, a second buffer pattern, and a first channel pattern which are sequentially stacked on the substrate, and a second MOS transistor including a second fin structure and a second gate electrode in the second region, the second fin structure having a third buffer pattern and a second channel pattern which are sequentially stacked on the substrate. Related fabrication methods are also discussed.
Samsung Electronics Co., Ltd.
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Sangsu TaeYong Sung Gi Jungdal
Kim Kwon Hur Choi