Anova Law Group, PLLC
Transistor and fabrication method thereof
A transistor and a method of forming the transistor are provided. The method includes forming a first interlayer dielectric layer on a substrate, forming an opening through the first interlayer dielectric layer, and forming a work function layer over side surfaces and a bottom of the opening. The method further includes forming a gate electrode layer over the work function layer, removing at least a portion of the work function layer over side surfaces of the gate electrode layer to form grooves, and forming a protection layer in the grooves.
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
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Yong
Li