F. Chau & Associates, LLC
Semiconductor device including a gate electrode and a conductive structure
A semiconductor device including: a conductor disposed on a substrate; a first contact disposed on the conductor; a second contact having a first portion disposed on the first contact and a second portion protruded away from the first portion in a direction parallel to the substrate, wherein the first and second contacts are disposed in an insulating layer; a via disposed on the insulating layer and the second portion of the second contact; and a metal line disposed on the via.
SAMSUNG ELECTRONICS CO., LTD.
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inventional inventional additional inventional inventional inventional
Jinyoung Giyoung Sanghoon Jung-Ho Seungyoung Jonghoon Taejoong
Lim Yang Baek Do Lee Jung Song