BainwoodHuang
Low interface state device and method for manufacturing the same
A method for manufacturing a low interface state device includes performing a remote plasma surface process on a III-Nitride layer on a substrate; transferring the processed substrate to a deposition cavity via an oxygen-free transferring system; and depositing on the processed substrate in the deposition cavity. The deposition may be low pressure chemical vapor deposition (LPCVD). The interface state between a surface dielectric and III-Nitride material may be significantly decreased by integrating a low impairment remote plasma surface process and LPCVD.
Institute of Microelectronics, Chinese Academy of Sciences
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Junfeng Wenwu Sen Xinhua Ke Xinyu Chao
Li Wang Huang Wang Wei Liu Zhao