Slater & Matsil, L.L.P.
Interconnect structures and methods of forming same
A semiconductor device, an interconnect structure, and methods of forming the same are disclosed. An embodiment is a method of forming a semiconductor device, the method including forming a first dielectric layer over a substrate, forming a first conductive layer in the first dielectric layer, and removing a first portion of the first conductive layer to form at least two conductive lines in the first dielectric layer, the at least two conductive lines being separated by a first spacing. The method further includes forming a capping layer on the at least two conductive lines, and forming an etch stop layer on the capping layer and the first dielectric layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Huang-Yi Minghsing Wen-Jiun Szu-Ping Ching-Hua
Huang Tsai Liu Tung Hsieh