Innovation Counsel LLP
Semiconductor device, related manufacturing method, and related electronic device
A method for manufacturing a semiconductor device may include the following steps: providing a composite structure that includes a gate material layer, a first mask material layer, and a sacrificial layer; partially removing, through a first mask, the sacrificial layer to form a sacrificial members; providing a second mask material layer on the sacrificial members; partially removing the second mask material layer to form mask units that contact sides of the sacrificial members; removing the sacrificial members; providing a third mask material layer between two of the mask units for forming a second mask; partially removing, through the second mask, the first mask material layer to form a third mask; and partially removing, through the third mask, the gate material layer to form a control gate and a select gate.
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
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Haewan Guanhua
Yang Li