Nixon Peabody LLP
Semiconductor device and driving method thereof
A semiconductor device capable of inhibiting incorrect data readout is provided. In a memory cell including a first transistor, a second transistor, and a third transistor, the potential of a fourth wiring is set to GND when data is written, and the potential is set to VDD when data is read out, for example. Note that the potential of a third wiring is set to GND when data is written and when data is read out, for example. When data is read out, the first transistor is off, so that a first capacitor and a fourth capacitor are connected in series. The potential of a second electrode of the second capacitor increases in this state, and thus part of charges accumulated in the second capacitor transfers to the first capacitor, so that the potential of a node increases.
Semiconductor Energy Laboratory Co., LTD.
G G H H H H G H H
G11C G11C H01L H01L H01L H01L G11C H01L H01L
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Hiroki Takanori Kiyoshi
Inoue Matsuzaki Kato