Harness, Dickey & Pierce, P.L.C.
Magnetic memory devices and methods of fabricating the same
Provided are magnetic memory devices and method of fabricating the same. The magnetic memory device includes a magnetic tunnel junction pattern disposed on a substrate and including a free layer, a tunnel barrier layer and a pinned layer which are sequentially stacked, and a first spin-orbit torque (SOT) line being in contact with a first sidewall of the free layer of the magnetic tunnel junction pattern.
Samsung Electronics Co., Ltd.
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Juhyun Whankyun Eunsun
Kim Kim Noh