Hauptman Ham, LLP
Top-gate self-aligned metal oxide semiconductor TFT and method of making the same
The present disclosure provides a top-gate self-aligned metal oxide semiconductor TFT and a manufacturing method thereof. By providing a light-shielding layer below an active layer to protect the active layer from light irradiation and prevent the TFT from generating a negative threshold voltage drift phenomenon. Further, by connecting the light-shielding layer to the source, a stable voltage is generated on the light-shielding layer to avoid the floating gate effect, so as to improve the working stability of the TFT effectively. The top-gate self-aligned metal oxide semiconductor TFT produced by the method of the present disclosure does not generate negative threshold voltage drift phenomenon and floating gate effect, resulting in good working stability.
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
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Xingyu Jangsoon
Zhou Im