Schwabe, Williamson & Wyatt, P.C.
Graded channels for high frequency III-N transistors
Techniques are disclosed for forming III-N transistor structures that include a graded channel region. The disclosed transistors may be implemented with various III-N materials, such as gallium nitride (GaN) and the channel region may be graded with a gradient material that is a different III-N compound, such as indium gallium nitride (InGaN), in some embodiments. The grading of the channel region may provide, in some cases, a built in polarization field that may accelerate carriers travelling between the source and drain, thereby reducing transit time. In various embodiments where GaN is used as the semiconductor material for the transistor, the GaN may be epitaxially grown to expose either the c-plane or the m-plane of the crystal structure, which may further contribute to the built-in polarization field produced by the graded channel.
Intel Corporation
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Sansaptak Marko Han Wui
Dasgupta Radosavljevic Then