E-fuse and manufacturing method thereof, and memory cell
An e-fuse and a manufacturing method thereof, and a memory cell are provided. The method includes: providing a semiconductor substrate including a preset active region; forming an isolating region on the substrate, where the isolating region and the preset active region have a height difference and are connected by at least one side wall; forming a negative electrode and a positive electrode on the preset active region; and forming a fuse link on the side wall for connecting the negative electrode and the positive electrode. Accordingly, the line width of the fuse link is out of the limitation of the limit line width of the semiconductor process, the actual line width of the e-fuse may be smaller than the limit line width of the semiconductor process, and low fusing current is required for fusing.
SHENZHEN WEITONGBO TECHNOLOGY CO., LTD.
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inventional inventional inventional additional inventional
Hongchao Jian Wenxuan
Wang Shen Wang