Fliesler, Dubb, Meyer & Lovejoy
Method of forming multiple gate oxide thicknesses on a wafer substrate
 An integrated circuit device and manufacturing process wherein a first region is formed in a substrate with a dopant that enhances oxide formation and a second region is formed in the substrate with a dose of nitrogen that retards oxide formation. An oxide layer is grown over the first and the second regions and over a third region of the substrate such that the first, second, and third regions yield differing thicknesses of the oxide layer. 
Advanced Micro Devices, Inc.
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Radu M. Xiao-Yu Sunil
Barsan Li Mehta