Double patterning mask set and method of forming thereof
A double patterning mask set includes a first mask having a first set of via patterns, and a second mask having a second set of via patterns. The first set of via patterns includes at least two via patterns arranged along a diagonal direction, each of the at least two via patterns has at least a truncated corner. The first set of via patterns and the second set of via patterns are interlacedly arranged along a horizontal direction and a vertical direction.
United Microelectronics Corp.
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inventional inventional inventional inventional
Jing-Yi Shih-Ming Ming-Jui Te-Hsien Cheng-Te Ping-I
Lee Kuo Chen Hsieh Wang Hsieh