Arent Fox LLP
Vibrating device
A vibrating device that is in the form of a rectangular plate having opposed long sides and opposed short sides, and that utilizes an expanding and contracting vibration mode in a direction of the short sides. The vibrating device includes a Si layer made of a degenerate semiconductor, a silicon oxide layer, a piezoelectric layer, and first and second electrodes through which a voltage is applied to the piezoelectric layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the TCF in the vibrating device when the silicon oxide layer 3 is not provided is denoted by x(ppm/K), T2/(T1+T2) is within a range of (−0.0003x2−0.0256x+0.0008)±0.05.
MURATA MANUFACTURING CO., LTD.
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Toshio Takehiko Keiichi Takashi Hiroshi Keisuke
Nishimura Kishi Umeda Hase Yamada Takeyama