Michael J. Chang, LLC
Tunable forming voltage for RRAM device
RRAM devices with tunable forming voltage are provided herein. A method of forming an RRAM device includes: depositing a first dielectric layer on a substrate; forming metal pads in the first dielectric layer; depositing a capping layer onto the first dielectric layer; forming heating elements in the capping layer in contact with the metal pads; forming an RRAM stack on the capping layer; patterning the RRAM stack into an RRAM cell(s) including a bottom electrode, a high-κ switching layer disposed on the bottom electrode, and a top electrode disposed on the high-κ switching layer; depositing a second dielectric layer over the RRAM cell(s); and forming a contact to the top electrode in the second dielectric layer. An RRAM device and a method of operating an RRAM device are also provided.
International Business Machines Corporation
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Dexin Zheng Juntao Kangguo
Kong Xu Li Cheng