Nixon Peabody LLP
Method for fabricating semiconductor device
The invention provides a method for fabricating a semiconductor device including a concaved capacitor device having a lower electrode, a capacitor dielectric film of a perovskite type high dielectric constant or ferroelectric material formed on the lower electrode and an upper electrode formed on the capacitor dielectric film. In this method, a step of forming a conducting film to be formed into the lower electrode includes sub-steps of forming a lower conducting film by sputtering on walls and a bottom of a recess formed in an insulating film on a substrate; and forming an upper conducting film on the lower conducting film by CVD.
Matsushita Electric Industrial Co., Ltd.
H H H H
H01L H01L H01L H01L
inventional additional inventional additional
Yasutoshi Akihiko Yoshihiro
Okuno Tsuzumitani Mori