Heslin Rothenberg Farley and Mesiti PC
T-shaped fin isolation region and methods of fabrication
Semiconductor devices and fabrication methods are provided having an isolation feature within a fin structure which, for instance, facilitates isolating circuit elements supported by the fin structure. The fabrication method includes, for instance, providing an isolation material disposed, in part, within the fin structure, the isolation material being formed to include a T-shaped isolation region and a first portion extending into the fin structure, and a second portion disposed over the first portion and extending above the fin structure.
GLOBALFOUNDRIES Inc.
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Hongliang Zhenyu Jin Ping
Shen Hu Liu