Hauptman Ham, LLP
RRAM circuit and method
A memory circuit includes a bias voltage generator, a drive circuit, and a resistive random-access memory (RRAM) device. The bias voltage generator includes a first current path configured to receive a first current from a current source, and output a bias voltage based on a voltage difference generated from conduction of the first current in the first current path. The drive circuit is configured to receive the bias voltage and output a drive voltage having a voltage level based on the bias voltage, and the RRAM device is configured to conduct a second current responsive to the drive voltage.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Chien-An Chung-Cheng Hsu-Shun Zheng-Jun Pei-Ling
Lai Chou Chen Lin Tseng