Burr & Brown
Method of forming silicon carbide film on aluminum nitride, film structure and silicon carbide film
A film structure including a silicon carbide film formed on a surface of an aluminum nitride substrate. The substrate has a first base plane, a second base plane positioned downward with respect to the first base plane and a step plane arranged in an intersecting direction between the first base plane and the second base plane. One or more chamfered planes are arranged between the first base plane and the step plane so as to form a plurality of corner portions each having an angle larger than 130&deg;. Alternatively, at least one round portion having a curvature radium of larger than 0.05 mm is arranged between the first base plane and the step plane.
NKG Insulators, Ltd.
C C B C Y C
C04B C23C B32B C04B Y10T C23C
inventional inventional inventional inventional additional inventional
Hirotake Hiromichi Hiroshi
Yamada Kobayashi Furukubo