Westerman, Hattori, Daniels & Adrian, LLP
Semiconductor device and method of manufacturing the same
A semiconductor device includes a ferroelectric capacitor formed over a semiconductor substrate, wherein the ferroelectric capacitor including a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film, and the upper electrode including a first conductive film formed of a first conductive noble metal oxide, and a second conductive film formed of a metal nitride compound formed on the first conductive film.
Fujitsu Semiconductor Limited
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H01L H01L H01L
inventional inventional inventional
Wensheng
Wang