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Forming III nitride alloys
A method for forming a semiconductor device involves selecting a substrate on which a wurtzite III-nitride alloy layer will be formed, and a piezoelectric polarization and an effective piezoelectric coefficient for the wurtzite III-nitride alloy layer. It is determined whether there is a wurtzite III-nitride alloy composition satisfying the selected effective piezoelectric coefficient. It is also determined whether there is a thickness for a layer formed from the wurtzite III-nitride alloy composition satisfying the selected piezoelectric polarization based on the selected substrate and the selected effective piezoelectric coefficient. Responsive to the determination that there is a wurtzite III-nitride alloy composition having a lattice constant satisfying the selected effective piezoelectric coefficient and a thickness for the layer formed from the wurtzite III-nitride alloy composition satisfying the selected piezoelectric polarization, the wurtzite III-nitride alloy layer is formed on the substrate having the wurtzite III-nitride alloy composition satisfying the selected effective piezoelectric coefficient and having the thickness satisfying the selected piezoelectric polarization.
KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
H H H
H01L H01L H01L
inventional inventional inventional
Xiaohang Kaikai
Li Liu