Birch, Stewart, Kolasch & Birch, LLP
Method for forming semiconductor structure by patterning assist layer having polymer
A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a assist layer over the material layer. The assist layer includes a polymer backbone, an acid labile group (ALG) bonded to the polymer backbone, and a floating group bonded to the polymer backbone. The floating group includes carbon fluoride (CxFy). The method also includes forming a resist layer over the assist layer and patterning the resist layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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An-Ren Chin-Hsiang Ching-Yu
Zi Lin Chang