Haynes and Boone, LLP
SRAM having irregularly shaped metal lines
A semiconductor device includes a gate structure, a source/drain, a first via that is disposed over the gate structure and the source/drain, and a first metal line having a more elevated vertical position than the first via in a cross-sectional view. The first via is electrically coupled to both the gate structure and the source/drain. The first metal line and the first via each extends in a first direction. A first distance separates the metal line from the via in a second direction different from the first direction. The first metal line includes a protruding portion that protrudes outwardly in the second direction.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Yu-Kuan Jui-Lin Chang-Ta Chao-Yuan Ping-Wei
Lin Chen Yang Chang Wang