Hollingsworth Davis, LLC
Devices having removed aluminum nitride sections
One or more layers are epitaxially grown on a bulk crystalline AlN substrate. The epitaxial layers include a surface which is the initial surface of epitaxial growth of the epitaxial layers. The AlN substrate is substantially removed over a majority of the initial surface of epitaxial growth.
PALO ALTO RESEARCH CENTER INCORPORATED
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Noble M. Thomas Brent S. Christopher L.
Johnson Wunderer Krusor Chua