Trop, Pruner & Hu, P.C.
Forming phase change memory arrays
A phase change memory may be formed to have a dimension that is sub-lithographic in one embodiment by forming a surface feature over the phase change material, and coating the surface feature with a mask of sub-lithographic dimensions. The horizontal portions of the mask and the surface feature may then be removed and the remaining portions of the mask may be used to define a dimension of said phase change material. Another dimension of the phase change material may be defined using an upper electrode extending over said phase change material as a mask to etch the phase change material.
Intel Corporation
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Ilya Yudong Charles C. Greg
Karpov Kim Kuo Atwood