Myers Bigel, P.A.
Power Schottky diodes having closely-spaced deep blocking junctions in a heavily-doped drift region
A Schottky diode includes a drift region, a channel in an upper portion of the drift region, and first and second adjacent blocking junctions in the upper portion of the drift region that define the channel therebetween. The drift region and channel are doped with dopants having a first conductivity type, and the first and second blocking junctions doped with dopants having a second conductivity type that is opposite the first conductivity type. The blocking junctions extend at least one micron into the upper portion of the drift region and are spaced apart from each other by less than 3.0 microns.
Cree, Inc.
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Scott Thomas Edward R. Brett Qingchun
Allen Van Brunt Hull Zhang