WPAT, P.C., Intellectual Property Attorneys
Image sensing device and manufacturing method thereof
Some embodiments of the present disclosure provide a back side illuminated (BSI) image sensor. The BSI image sensor includes a semiconductive substrate, a deep trench isolation (DTI) at a back side of the semiconductive substrate, and a dielectric layer. the dielectric layer includes a top portion over the back side, and a side portion lined to a sidewall of the DTI. The BSI image sensor includes a planarization stop layer disposed conformally on top of the dielectric layer. The planarization stop layer includes a top section on the top portion, a side section lined against the side portion, and a first transmittance. The BSI image sensor includes a low-transparent material inside the DTI, and the low-transparent material includes a second transmittance. The second transmittance is lower than the first transmittance.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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additional inventional inventional inventional
Po-Zen Chung-Bin Yi-Hung Cheng-Hsien Keng-Ying Jiech-Fun
Chen Tseng Chen Chou Liao Lu