Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage
A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas, using a charged particle-beam inspector with a moving stage and beam deflection to account for motion of the stage.
PDF Solutions, Inc.
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John Timothy Jeremy Conor Sheng-Che Indranil Andrzej Vyacheslav Larg Hideki Rakesh Sherry Simone Tomasz Nobuharu Marci Marcin Kelvin Stephen Dennis Christopher Kimon Markus Hans Jonathan Carl
Kibarian Fiscus Cheng O'Sullivan Lin De Strojwas Rovner Weiland Matsuhashi Vallishayee Lee Comensoli Brozek Yokoyama Liao Strojwas Doong Lam Ciplickas Hess Michaels Rauscher Eisenmann Haigh Taylor