Park, Vaughan & Fleming LLP
InGaAIN light-emitting device containing carbon-based substrate and method for making the same
One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate comprises at least one carbon-based layer. This carbon-based substrate has both high thermal conductivity and low electrical resistivity.
Lattice Power (Jiangxi) Corporation
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Li Fengyi Junlin Changda Weihua Yingwen Chuanbing Guping
Wang Jiang Liu Zheng Liu Tang Xiong Wang