Dority & Manning, P.A.
Selective etch process using hydrofluoric acid and ozone gases
Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.
Mattson Technology, Inc. Beijing E-Town Semiconductor Technology, Co., LTD
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Hua Qi Michael X. Ting Haichun
Chung Zhang Yang Xie Yang