F. Chau & Associates, LLC
Thin film transistor and thin film transistor array panel including the same
A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
SAMSUNG DISPLAY CO., LTD.
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Yong Su Se Hwan Yoon Ho Hyun Jae Sang Gab Myoung Geun Sang Ho Jae Neung Dae Ho Dong Jo Yu-Gwang Chong Sup
Lee Yu Khang Na Kim Cha Park Kim Kim Kim Jeong Chang