Maschoff Brennan
Process of manufacturing Fin-FET device
A process of manufacturing a Fin-FET device, and the process includes following steps. An active fin structure and a dummy fin structure are formed from a substrate, and an isolation layer is covered over the active fin structure and the dummy fin structure. Then, the isolation layer above the dummy fin structure is removed, and the dummy fin structure is selectively etched, which a selective ratio of the dummy fin structure to the isolation layer is over 8.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Eric Chih-Fang Ryan Chia-Jen An-Shen Chih-Tang Chia-Wei Chia-Tai
Liu Chen Chang Peng Chang Lin