Schwabe, Williamson & Wyatt, P.C.
Gate-all-around integrated circuit structures having depopulated channel structures using selective bottom-up approach
Gate-all-around integrated circuit structures having depopulated channel structures, and methods of fabricating gate-all-around integrated circuit structures having depopulated channel structures using a selective bottom-up approach, are described. For example, an integrated circuit structure includes a vertical arrangement of nanowires above a substrate. The vertical arrangement of nanowires has one or more active nanowires above one or more oxide nanowires. A first gate stack is over and around the one or more active nanowires. A second gate stack is over and around the one or more oxide nanowires.
Intel Corporation
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Nicole Cheng-Ying Marko Ehren
Thomas Huang Radosavljevic Mannebach