Tarolli, Sundheim, Covell & Tummino LLP
Metal-semiconductor heterodimension field effect transistors (MESHFET) and high electron mobility transistor (HEMT) based device and method of making the same
A semiconductor device is provided that comprises a base structure, a first channel layer overlying the base structure, a second channel layer overlying the first channel layer, and first, second, and third ohmic contacts overlying the second channel layer. The semiconductor device further comprises a metal-semiconductor heterodimension field effect transistor that is formed between the first and second ohmic contacts, the metal-semiconductor heterodimension field effect transistor including a first gate formed through the first and second channel layers. The semiconductor device yet further comprises a high electron mobility transistor formed between the second and third ohmic contacts, the high electron mobility transistor including a second gate formed through the second channel layer without extending through the first channel layer.
NORTHROP GRUMMAN SYSTEMS CORPORATION
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Roger S. Weidong Yeong-Chang
Tsai Liu Chou