F. Chau & Associates, LLC
Display device
A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
SAMSUNG DISPLAY CO., LTD.
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Myoung Geun Yong Su Dong Jo Hyun Jae Jae Neung Sang Ho Yu-Gwang Dae Ho Chong Sup Sang Gab Yoon Ho Se Hwan
Cha Lee Kim Na Kim Park Jeong Kim Chang Kim Khang Yu