Laterally diffused metal oxide semiconductor (LDMOS) device with overlapping wells
Some of the embodiments of the present disclosure provide a transistor comprising a p-type well; and an n-type well; wherein at least a part of one of the p-type well and the n-type well overlaps with at least a part of another of the p-type well and the n-type well. Other embodiments are also described and claimed.
Marvell International Ltd.
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Chung Chyung (Jason) Jian-Hung Chuan-Cheng Xin Yi Weidan
Han Lee Cheng Zhang Li