Moser IP Law Group
Method of forming a low-K dual damascene interconnect structure
A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.
Applied Materials, Inc.
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inventional inventional inventional
Li-Qun Xiaoye Fang Wen Yan Gerardo A. Lihua Tzu-Fang Neungho Yunsang Joey Ellie
Xia Zhao Tian Zhu Ye Delgadino Li Huang Shin Kim Chiu Yieh