Harness, Dickey & Pierce, P.L.C.
Magnetic random access memory devices and methods of manufacturing the same
Magnetic random access memory (MRAM) devices, and methods of manufacturing the same, include at least one first magnetic material pattern on a substrate, at least one second magnetic material pattern on the at least one first magnetic material pattern, and at least one tunnel barrier layer pattern between the at least one first magnetic material pattern and the at least one second magnetic material pattern. A width of a top surface of the at least one first magnetic material pattern may be less than a width of a bottom surface of the at least one second magnetic material pattern.
Samsung Electronics Co., Ltd.
H H
H01L H01L
inventional inventional
Kyu-Man Shi-Jung Mi-Lim Seung-Woo Jun-Soo
Hwang Kim Park Lee Bae