Haynes and Boone, LLP
Semiconductor devices with air gate spacer and air gate cap
A method includes providing a structure having a gate stack; first gate spacers; a second gate spacer over one of the first gate spacers and having an upper portion over a lower portion; a dummy spacer; an etch stop layer; and a dummy cap. The method further includes removing the dummy cap, resulting in a first void above the gate stack and between the first gate spacers; removing the dummy spacer, resulting in a second void above the lower portion and between the etch stop layer and the upper portion; depositing a layer of a decomposable material into the first and the second voids; depositing a seal layer over the etch stop layer, the first and the second gate spacers, and the layer of the decomposable material; and removing the layer of the decomposable material, thereby reclaiming at least portions of the first and the second voids.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chi-Lin Chia-Hao Lin-Yu Ting-Ya Hai-Ching Hsin-Yen Yu-Ming Cheng-Chi
Teng Chang Huang Lo Chen Huang Lin Chuang