Mayer, Brown, Rowe & Maw LLP
Method of manufacturing a semiconductor device by RTA process in nitrogen atmosphere
Disclosed is a method of manufacturing a semiconductor device. A gate is formed on a given region of a semiconductor substrate. Spacers are then formed using DCS-HTO or TEOS. Hydrogen remaining within the spacers is removed by a RTA process under nitrogen atmosphere and nitride films are formed on the spacers at the same time. In case of a flash memory device, a retention characteristic can be improved. A process of forming the nitride film additionally required in a subsequent contact hole formation process may be omitted. The sheet resistance of the gate could be improved by promoting growth of a crystal grain of a tungsten silicide film constituting a control gate.
Hynix Semiconductor Inc.
H H
H01L H01L
inventional inventional
Sang Wook Seung Cheol
Park Lee