Nonvolatile memory cell and fabrication method thereof
A nonvolatile memory cell includes a substrate having a drain region, a source region, and a channel region between the drain region and the source region. A floating gate and a select gate are disposed on the channel region. A control gate is disposed on the floating gate. An erase gate is disposed on the source region. The erase gate includes a lower end portion that extends into a major surface of the substrate.
UNITED MICROELECTRONICS CORP.
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Shen-De Liang Chih-Chien
Wang Yi Chang