Canon U.S.A., Inc. IP Division
Photoelectric conversion device and manufacturing method of the photoelectric conversion device
A manufacturing method includes a first process for forming a first gate electrode for a first MOS transistor and a second gate electrode for a second MOS transistor on a substrate including a semiconductor region defined by an insulator region for element isolation, a second process for masking a portion located above the semiconductor region of the first gate electrode to introduce an impurity to a source-drain region of the first MOS transistor, and a third process for forming a first conductor member being in contact with the portion of the first gate electrode through a first hole disposed on an insulator member covering the substrate and a second conductor member being in contact with the second gate electrode through a second hole disposed on the insulator member.
Canon Kabushiki Kaisha
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Masatsugu Nobuaki Masato Mineo Yusuke
Itahashi Kakinuma Fujita Shimotsusa Onuki