Ryan, Mason & Lewis, LLP
Method and structure of fabricating I-shaped silicon vertical field-effect transistors
A method for manufacturing a semiconductor device includes forming a first silicon germanium layer on a semiconductor substrate, forming a silicon layer on the first silicon germanium layer, and a forming second silicon germanium layer on the silicon layer. The method further includes patterning the first and second silicon germanium layers and the silicon layer into at least one fin. In the method, a germanium oxide layer is formed on the substrate and the at least one fin, and annealing is performed to convert the germanium oxide layer formed on the first and second silicon germanium layers into silicon oxide. Remaining portions of the germanium oxide layer are removed, and a width of the silicon layer is reduced.
International Business Machines Corporation
H H H H H H H H H H H B H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L B82Y H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional additional inventional additional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional additional inventional additional inventional
Juntao Kangguo Peng ChoongHyun
Li Cheng Xu Lee