Hoffman Warnick LLC
Process for variable fin pitch and critical dimension
A multi-masking process is used to form semiconductor fin arrays having a controlled and variable fin pitch and fin critical dimension within different arrays. A layer of curable silicon nitride is incorporated into a patterning architecture, patterned to form an etch mask, and locally cured to further modify the etch mask geometry. The use of cured and uncured structures facilitate the tuning of the resultant fin geometry.
GLOBALFOUNDRIES INC.
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Jinping Hui
Liu Zang