Sterne, Kessler, Goldstein & Fox P.L.L.C.
Selective formation of titanium silicide and titanium nitride by hydrogen gas control
The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Cheng-Wei Kao-Feng Min-Hsiu Yi-Hsiang Huang-Yi Yu-Ting
Chang Lin Hung Chao Huang Lin