Tung & Associates
Dual damascene aperture formation method absent intermediate etch stop layer
Within a method for forming a dual damascene aperture there is surface treated a first dielectric layer to form a surface treated first dielectric layer having a first surface composition different than a first bulk composition. There is then formed upon the surface treated first dielectric layer a second dielectric layer having a second bulk composition. Finally, there is then formed through the second dielectric layer a trench contiguous with and overlapping a via formed through the surface treated first dielectric layer. Within the present invention, when forming the trench through the second dielectric layer an endpoint is determined by detecting a difference between the second bulk composition and the first surface composition.
Taiwan Semiconductor Manufacturing Co., Ltd.
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inventional inventional inventional inventional
Chen-Hua Sung-Ming Yao-Yi Yu-Huei
Yu Jang Cheng Chen