Vierra Magen Marcus LLP
NAND string pre-charge during programming by injecting holes via substrate
Apparatuses and techniques are described for pre-charging NAND string channels in a pre-charge phase of a program operation. In one aspect, a hole-type pre-charge process is used at the source end of a NAND string, where a bottom of the NAND string is connected to a p-well of a substrate. By applying a positive voltage to the p-well and a lower voltage, such as 0 V or a negative voltage, to the source-side select gate transistors and the memory cells, the holes from the p-well are injected into the channel In another approach, the hole-type pre-charge process and an electron-type pre-charge process are used sequentially in separate time periods. In another approach, the hole-type pre-charge process is used at the source end of a NAND string while the electron-type pre-charge process is used at the drain end of the NAND string.
SanDisk Technologies LLC
G G G G G H G G H
G11C G11C G11C G11C G11C H01L G11C G11C H01L
inventional inventional inventional additional additional inventional inventional additional inventional
Henry Wei Han-Ping
Chin Zhao Chen