Maschoff Brennan
Method of treating interfacial layer on silicon germanium
A method includes forming a channel region on a semiconductor substrate. An interfacial layer is formed on the channel region. The interfacial layer is treated with trimethyl aluminum (TMA). A high-k dielectric layer is formed on the interfacial layer after treating the interfacial layer with TMA. A gate electrode is formed on the high-k dielectric layer. The treating the interfacial layer with TMA and forming the high-k dielectric layer are performed in the same chamber. The interfacial layer is annealed before treating the interfacial layer with TMA. The annealing the interfacial layer and treating the interfacial layer with TMA are performed in different chambers.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Zi-Wei Chih-Yu Hsiang-Pi
Fang Chang Chang