Myers Bigel Sibley & Sajovec, PA
Integrated circuit devices including through-silicon-vias having integral contact pads
An integrated circuit device including an interlayer insulating layer on a substrate, a wire layer on the interlayer insulating layer, and a through-silicon-via (TSV) contact pattern having an end contacting the wire layer and integrally extending from inside of a via hole formed through the interlayer insulating layer and the substrate to outside of the via hole.
Samsung Electronics Co., Ltd.
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Jeong-woo Jeong-gi Ju-il
Park Jin Choi