Ditthavong & Steiner P.C.
Device with large EPI in FinFETs and method of manufacturing
A method of forming a logic or memory cell with an epi-RSD width of larger than 1.3× fin pitch and the resulting device are provided. Embodiments include a device including a RSD region formed on each of a plurality of fins over a substrate, wherein the RSD has a width larger than 1.3× fin pitch, a TS formed on the RSD, and an ILD formed over the TS.
GLOBALFOUNDRIES INC.
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Jianwei Matthew Wahlquist Jinping Huang Sang Woo
Peng Stoker Liu Liu Lim