Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Semiconductor device and semiconductor device manufacturing method
A first insulation film is on a substrate. A first resistance part is on the first insulation film. A boundary film is on the first resistance part. A second resistance part is on the boundary film. A second insulation film is on the second resistance part. A first conductive part and a second conductive part are on the second insulation film, and are isolated from each other. The first conductive part includes a first connection part penetrating the second insulation film and the second resistance part and contacting a surface of the boundary film. The second conductive part includes a second connection part penetrating the second insulation film and the second resistance part and contacting a surface of the boundary film. The first resistance part is connected to the first conductive part via the first connection part, and is connected to the second conductive part via the second connection part.
Kabushiki Kaisha Toshiba
H H H
H01L H01L H01L
inventional inventional additional
Shoichi Hiroyuki
Watanabe Kuroe