Marshall, Gerstein & Borun LLP
Method of manufacturing a flash memory cell capable of increasing a coupling ratio
A method of manufacturing a flash memory cell. The method includes controlling a wall sacrificial oxidization process, a wall oxidization process and a cleaning process of a trench insulating film that are performed before/after a process of forming the trench insulating film for burying a trench to etch the trench insulating film to a desired space. Therefore, it is possible to secure the coupling ratio of a floating gate by maximum and implement a device of a smaller size.
Hynix Semiconductor, Inc.
H H
H01L H01L
inventional inventional
Young Bok Jung Ryul Sung Mun Young Ki Jum Soo
Lee Ahn Jung Shin Kim