Stanzione & Kim, LLP
Programming a nonvolatile memory device using a bias voltage to a well of a memory block
A nonvolatile memory device is provided which includes a plurality of memory blocks, a bias block and a control logic block. The memory blocks are formed in wells, respectively. The bias block biases a well of a selected memory block. The control logic block controls the bias block to pre-charge doping regions of the selected memory block to a junction voltage before word line voltages are applied to the selected memory block in a programming operation.
SAMSUNG Electronics Co., Ltd.
G G
G11C G11C
inventional inventional
Seungwon
Lee