McGinn IP Law Group, PLLC
Method for growing β-Ga2O3-based single crystal
A method for growing a β-Ga2O3-based single crystal, can provide a plate-shaped β-Ga2O3-based single crystal having high crystal quality. In one embodiment, a method for growing a β-Ga2O3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, wherein the plate-shaped seed crystal includes a β-Ga2O3-based single crystal having a defect density of not more than 5×105 /cm2 in the whole region; and pulling up the seed crystal to grow a β-Ga2O3-based single crystal.
TAMURA CORPORATION KOHA CO., LTD.
Shinya Kazuyuki Daiki Kimiyoshi Takekazu
Watanabe Iizuka Wakimoto Koshi Masui