Cantor Colburn LLP
Vertically stacked nanosheet CMOS transistor
Embodiments of the present invention are directed to techniques for generating vertically stacked nanosheet CMOS (Complementary Metal Oxide Semiconductor) transistor architectures. In a non-limiting embodiment of the invention, a first rare earth oxide layer is formed over a substrate. An n-FET nanosheet stack is formed on the rare earth oxide layer. The n-FET nanosheet stack includes a first nanosheet. A second rare earth oxide layer is formed on the n-FET nanosheet stack. A p-FET nanosheet stack is formed on the second rare earth oxide layer. The p-FET nanosheet stack includes a second nanosheet.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Juntao Zhenxing Kangguo
Li Bi Cheng