Brinks Hofer Gilson & Lione
Tunneling magnetic sensing element including MGO film as insulating barrier layer
A tunneling magnetic sensing element includes a laminate in which an underlayer, a seed layer, an antiferromagnetic layer, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer are laminated in order from below. The insulating barrier layer is made of Mg—O. The underlayer is made of Ti, and the seed layer is made of one selected from a group consisting of Ni—Fe—Cr and Ru.
ALPS Electric Co., Ltd.
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G01R G11B Y10T Y10T B82Y H01F H01F G11B Y10T Y10T Y10T H01L H01F B82Y
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Yoshihiro Naoya Hidekazu Masamichi Yosuke Kazumasa Ryo
Nishiyama Hasegawa Kobayashi Saito Ide Nishimura Nakabayashi