Posz Law Group, PLC
High electron mobility transistor semiconductor device and fabrication method thereof
In a method of forming a semiconductor device on a semiconductor substrate (100), a photoresist layer (102) is deposited on the semiconductor substrate; a window (106) is formed in the photoresist layer (102) by electron beam lithography; a conformal layer (108) is deposited on the photoresist layer (102) and in the window (106); and substantially all of the conformal layer (108) is selectively removed from the photoresist layer (102) and a bottom portion of the window to form dielectric sidewalls (110) in the window (106).
Northrop Grumman Space & Mission Systems Corp.
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Xiaobing Richard Po-Hsin Jane Linh Jennifer Michael Wayne Weidong
Mei Lai Liu Lee Dang Wang Barsky Yoshida Liu