Antonelli, Terry, Stout & Kraus, LLP
Method of manufacturing semiconductor integrated circuit device having insulating film formed from liquid substance containing polymer of silicon, oxygen, and hydrogen
An SOG film 16 obtained by heat-treating a polysilazan type SOG film at high temperature of about 800&deg; C. is used as a planarized insulating film to be formed on the gate electrode (9; see FIGS. 31 and 32) of a MISFET (Qs, Qn, Qp) A polysilazan SOG film (57) not subjected to such a heat treatment is used as interlayer insulating film arranged among upper wiring layers (54, 55, 56, 62, 63).
Hitachi Ltd. Hitachi ULSI Systems Co., Ltd.
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Katsuhiko Hiroyuki Hiroyuki Masayoshi Takuya Masayuki Masayoshi
Hotta Uchiyama Maruyama Hirasawa Fukuda Kojima Saito