IP & T Group LLP
Method of forming gate dielectric layer and method of fabricating semiconductor device
A method for fabricating a semiconductor device includes ion-implanting germanium into a monocrystalline silicon-containing substrate; forming a gate oxide layer over a surface of the monocrystalline silicon-containing substrate and forming, under the gate oxide layer, a germanium-rich region in which the germanium is concentrated, by performing a plasma oxidation process; and crystallizing the germanium-rich region by performing an annealing process.
SK hynix Inc.
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Yun Hyuck Beom-Yong Bong-Seok Seung-Mi
Ji Kim Jeon Lee