Rader, Fishman & Grauer PLLC
Method of manufacturing a semiconductor light emitting device utilizing a nitride III-V compound semiconductor substrate
When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0<y/x≦0.011 and x≧450 μm. Alternatively, if the maximum dimension of the substrate is D (cm), its warpage H is in the range of 0<H≦70×10−4 (cm), and Z=y/x, D is controlled to satisfy the relation 0<D<(2/CZ)cos−1(1−HCZ), where C (cm−1) is the proportionality constant when the radius of curvature of the substrate ρ (cm) is expressed as 1/ρ=CZ.
Sony Corporation
H C H H H H C C
H01L C30B H01L H01L H01L H01L C30B C30B
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Shinro Yasuhiko Motonobu Takeharu Katsuyoshi Osamu
Ikeda Suzuki Takeya Asano Shibuya Goto