Thompson Hine LLP
Fin-based diode structures with a realigned feature layout
Diode structures and methods of fabricating diode structures. First and second gate structures are formed with the second gate structure arranged parallel to the first gate structure. First and second fins are formed that extend vertically from a top surface of a substrate. The first and second fins are arranged between the first gate structure and the second gate structure. A contact structure is coupled with the first fin and the second fin. The contact structure is laterally arranged between the first gate structure and the second gate structure.
GLOBAL FOUNDRIES Inc.
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Mickey You Robert J. Tsung-Che Alain Souvick
Yu Li Gauthier, Jr. Tsai Loiseau Mitra