Oblon, McClelland, Maier & Neustadt, L.L.P.
Semiconductor memory device and method for manufacturing the same
A semiconductor memory device according to an embodiment includes: a pair of insulating members separated from each other, the pair of insulating members extending in a first direction; a plurality of electrode films and a plurality of inter-layer insulating films disposed between the pair of insulating members and stacked alternately along a second direction, the second direction intersecting the first direction; a plurality of semiconductor pillars extending in the second direction and piercing the plurality of electrode films and the plurality of inter-layer insulating films; and a charge storage film disposed between one of the semiconductor pillars and one of the electrode films. An end portion on one of the insulating members side of a first electrode film of the electrode films is thicker than a central portion of the first electrode film between the pair of insulating members.
TOSHIBA MEMORY CORPORATION
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inventional inventional inventional inventional
Hiroki Takamasa
Yamashita Ito