Rabin & Berdo, P.C.
Phase change memory cell and method of fabricating
A phase change memory (PCM) cell fabricated by etching a tapered structure into a phase change layer, and planarizing a dielectric layer on the phase change layer until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced, thereby lowering the operation current.
Industrial Technology Research Institute
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additional inventional inventional inventional inventional inventional
Wei-Su Min-Hung Wen-Han Hong-Hui Yi-Chan Yen Chien-Min Te-Sheng
Chen Lee Wang Hsu Chen Chuo Lee Chao