Pennie & Edmonds LLP
Method of manufacturing a CMOS transistor
 There is disclosed a method of manufacturing a CMOS transistor, by which ion implantation process is selectively performed to the gate formed region of a polysilicon film after a NMOS transistor region and a PMOS transistor region are defined in the process of manufacturing a CMOS transistor. Thus, it can obtain a reliable device by solving the problem occurring when polysilicon films doped with different impurities are simultaneously etched and the problem that a tungsten film is oxidized due to a selective oxidization process after forming a tungsten gate electrode. 
Hyundai Electronics Industries Co., Ltd.
H
H01L
inventional
Seon Soon Jun Gi
Kim Choi