Kilpatrick, Townsend & Stockton LLP
Semiconductor device with bulb-type recessed channel and method for fabricating the same
A method for fabricating a semiconductor device includes providing a substrate having a bulb-type recessed region, forming a gate insulating layer over the bulb-type recessed region and the substrate, and forming a gate conductive layer over the gate insulating layer. The gate conductive layer fills the bulb-type recessed region. The gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers.
Hynix Semiconductor Inc.
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inventional additional inventional inventional
Yong Soo Kwon Se Aug Heung Jae Seung Ho Seung Ryong Kwan Yong Hong Seon Tae Yoon Min Gyu
Kim Hong Jang Cho Pyi Lee Lim Yang Kim Sung