Fitzpatrick, Cella, Harper & Scinto
Display apparatus using oxide semiconductor and production thereof
A transistor includes a source terminal and a drain terminal, an active layer having an oxide containing In, a gate electrode, and a gate insulating layer between the gate electrode and the active layer. The gate insulating layer contains hydrogen in an amount of less than 3×1021 atoms/cm3, and an electron carrier concentration of the active layer is less than 1018/cm3.
Canon Kabushiki Kaisha
H H
H01L H01L
additional inventional
Kenji Masafumi
Takahashi Sano