Duane Morris LLP
Multi-zone temperature control for semiconductor wafer
An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chi-Ming Ming-Yu Zin-Chang Jun-Lin Hsin-Hsien Chyi Shyuan Jo Fei Jih-Jse Chun-Lin Jong-I
Yang Fan Wei Yeh Wu Chern Wang Lin Chang Mou