Method for fabricating high aperture ratio TFT's and devices formed
A method for fabricating a high aperture ratio and low contact resistance, TFT structure and devices formed by such method are disclosed. In the method, a source/drain metal layer is deposited directly on a n+ amorphous silicon layer such that the contact resistance of the transistor structure can be significantly reduced. The final deposition of a transparent electrode layer, such as of an ITO material, improves the aperture ratio for the transistor. Numerous other processing benefits are also provided by the present invention novel method such that a more reliable transistor and a capacitor that has more stable storage capacitance can be formed with the transistor. A back channel etched inverted staggered type TFT that has high aperture ratio and low contact resistance is thus provided by the present invention novel method.
Industrial Technology Research Institute
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inventional inventional inventional inventional
Ting-Hui Jr-Hong
Huang Chen