Myers Bigel Sibley & Sajovec
Semiconductor device capacitors with oxide-nitride layers and methods of fabricating such capacitors
Capacitors having upper electrodes that include a lower electrode, a dielectric layer and an upper electrode that includes a conductive metal nitride layer and a doped polysilicon germanium layer are provided. At least part of the conductive metal nitride layer is oxidized and/or at least part of the dielectric layer is nitridized.
Samsung Electronics Co., Ltd.
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additional additional inventional inventional
Jong-cheol Se-hoon Young-sun Hong-bum Jae-hyoung Jung-hee
Lee Oh Kim Park Choi Chung