Morrison & Foerster LLP
Semiconductor device and manufacturing method thereof
This invention is directed to offer a semiconductor device in which a cavity space is easily provided in a specific region when a supporting member is bonded to a semiconductor substrate through an adhesive layer, and its manufacturing method. A resist layer is applied to an entire top surface of the semiconductor substrate 2, and exposure to transfer a pattern is performed. By subsequent development and selective removal of the resist layer, the resist layer is formed into a shape of a plurality of columnar structures 4. Then, an adhesive material made of an epoxy resin or the like is applied to the entire top surface of the semiconductor substrate 2. The adhesive material is gathered around the columnar structures 4 by itself to form an adhesive layer 5. Therefore, in contrast, the adhesive layer 5 does not deposit in a region where the cavity is to be formed. Then, the supporting member 6 is bonded through the columnar structures 4 and the adhesive layer 5. By bonding the supporting member 6, there is formed the cavity 7 surrounded with the semiconductor substrate 2, the columnar structures 3 and the supporting member 6. 
SANYO Semiconductor Co., Ltd. Semiconductor Components Industries, LLC
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Hiroshi Kazuo Katsuhiko Hiroyuki
Yamada Okada Kitagawa Shinogi