Method for fabricating ultra-thin graphite film on silicon carbide substrate from siloxane-coupling-group-containing polyamic acid solution
A method for fabricating an ultra-thin graphite film on a silicon carbide substrate includes the steps of: (A) providing a polyamic acid solution and a siloxane-containing coupling agent for polymerizing under an inert gas atmosphere to form a siloxane-coupling-group-containing polyamic acid solution; (B) performing a curing process after applying the siloxane-coupling-group-containing polyamic acid solution to a silicon carbide substrate; (C) placing the silicon carbide substrate in a graphite crucible before placing the graphite crucible in a reaction furnace to perform a carbonization process under an inert gas atmosphere; (D) subjecting the silicon carbide substrate to a graphitization process to obtain a graphite film, thereby make it possible to fabricate an ultra-thin graphite film of high-quality on the surface of silicon carbide in a lower graphitization temperature range.
National Chung-Shan Institute of Science and Technology
C C H C H C H
C30B C30B H01L C30B H01L C30B H01L
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Bang-Ying Cheng-Jung Jun-Bin Dai-Liang Chia-Hung
Yu Ko Huang Ma Tai