Merchant, Gould, Smith, Edell, Welter & Schmidt
Method of manufacturing a DRAM cell
 Disclosed is a novel DRAM manufacturing method to reduce difficulties due to the high aspect ratio of contact hole for storage electrode. The method comprises the steps of formation of a contact plug on contact areas of bit line and storage electrode at the same time and then, formation of a bit line that is in contact with the contact plug for bit line and finally, making a storage electrode that is as high as the bit line contact with the contact plug for storage electrode. 
Hyundai Electronics Industries Co., Ltd.
H Y
H01L Y10S
inventional additional
Young J. Seok H.
Park Lee