Slater Matsil, LLP
Methods of forming semiconductor devices using multiple planarization processes
Semiconductor devices and methods of forming are provided. In some embodiments the method includes forming a dielectric layer over a substrate and patterning the dielectric layer to form a first recess. The method may also include depositing a first layer in the first recess and depositing a second layer over the first layer, the second layer being different than the first layer. The method may also include performing a first chemical mechanical polish (CMP) process on the second layer using a first oxidizer and performing a second CMP process on remaining portions of the second layer and the first layer using the first oxidizer. The method may also include forming a first conductive element over the remaining portions of the first layer after the second CMP polish is performed.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chun-Wei Liang-Guang Chia-Wei Pinlei Edmund Ling-Fu Ting-Hsun Yi-Sheng Chi-Jen
Hsu Chen Ho Chu Nieh Chang Lin Liu