Perkins Coie LLP
Light-emitting element having ZnO transparent electrode and method for manufacturing same
A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (ω2θ) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ω2θ scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (ω) scan, is equal to or less than 900 arc sec.
SEOUL VIOSYS CO., LTD.
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H01L H01L H01L H01L H01L H01L H01L C30B H01L G02F C30B
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Jin Woong Evan C. Seom Geun Keum Ju Jacob J. Chan Seob Myoung Hak
Lee O'Hara Lee Lee Richardson Shin Yang