Turocy & Watson, LLP
Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFETs
A method for and devices utilizing monolithic integration of enhancement-mode and depletion-mode AlGaN/GaN heterojunction field-effect transistors (HFETs) is disclosed. Source and drain ohmic contacts of HFETs are first defined. Gate electrodes of the depletion-mode HFETs are then defined. Gate electrodes of the enhancement-mode HFETs are then defined using fluoride-based plasma treatment and high temperature post-gate annealing of the sample. Device isolation is achieved by either mesa etching or fluoride-based plasma treatment. This method provides a complete planar process for GaN-based integrated circuits favored in high-density and high-speed applications.
The Hong Kong University of Science and Technology
H H H H H
H01L H01L H01L H01L H01L
additional inventional inventional inventional inventional
Jing Yong Kei May
Chen Cai Lau