Muncy, Geissler, Olds & Lowe, PLLC
Light-emitting device and the manufacturing method thereof
A light-emitting device having a light-emitting epitaxy structure. The light-emitting epitaxy structure has a modulus of a critical reverse voltage not less than 50 volts, while the light-emitting epitaxy structure is reverse-biased at a current density of −10 μA/mm2, and has a luminous efficiency not less than 50 lumen/Watt, while the light-emitting epitaxy structure is forward-biased at a current density of 150 mA/mm2.
Epistar Corporation
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H01L H01L H01L
inventional additional additional
Chung-Ying Chao-Hsu Tien Kun Wen-Jia
Chang Lai Lin Huang