Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Low-noise silicon controlled rectifier for electrostatic discharge protection
An integrated circuit device that includes a semiconductor substrate, a well region formed inside the semiconductor substrate, a first isolation structure contiguous with the well region, a second isolation structure contiguous with well region and spaced apart from the first isolation structure, a dielectric layer disposed over the well region and the first and second isolation structures, and a layer of silicon, formed over the dielectric layer, including a first p-type portion, a first n-type portion contiguous with the first p-type portion, a second p-type portion, and a second n-type portion contiguous with the second p-type portion, wherein at least a portion of the first p-type and first n-type portions overlap the first isolation structure and at least a portion of the second p-type and second n-type portions overlap the second isolation structure.
Industrial Technology Research Institute
H H
H01L H01L
inventional inventional
Ming-Dou Chyh-Yih Hsin-Chin
Ker Chang Jiang