Ladas & Parry LLP
Mask for extreme ultraviolet lithography process and method of fabricating the same
A mask for an extreme ultraviolet (EUV) lithography process is provided. The mask includes a substrate, a reflection layer including first material layers and second material layers which are alternately and repeatedly stacked on the substrate, a capping layer on the reflection layer, and a phase shift layer and an absorber layer sequentially stacked on the capping layer. Sidewalls of the phase shift layer and the absorber layer may be oblique to a top surface of the capping layer.
IUCF-HYU(INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
G G G
G03F G03F G03F
inventional inventional inventional
Seongchul Hyun Min Jinho Jung Sik Seung Min Jae Uk Jung Hwan
Hong Song Ahn Kim Lee Lee Kim