Cooper Legal Group, LLC
Device performance enhancement
Among other things, one or more techniques for enhancing device (e.g., transistor) performance are provided herein. In one embodiment, device performance is enhanced by forming an extended dummy region at an edge of a region of a device and forming an active region at a non-edge of the region. Limitations associated with semiconductor fabrication processing present in the extended dummy region more so than in non-edge regions. Accordingly, a device exhibiting enhanced performance is formed by connecting a gate to the active region, where the active region has a desired profile because it is comprised within a non-edge of the region. A dummy device (e.g., that may be less responsive) may be formed to include the extended dummy region, where the extended dummy region has a less than desired profile due to limitations associated with semiconductor fabrication processing, for example.
Taiwan Semiconductor Manufacturing Co. Limited
H H H
H01L H01L H01L
inventional inventional inventional
Chang-Yu Wei-Chih Shang-Chih Chih-Chiang
Wu Hsieh Hsieh Chang