Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas
A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas.
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Carl Markus Christopher Conor Andrzej Hideki Jonathan Rakesh Kimon Dennis Larg Jeremy Vyacheslav Marci Marcin Stephen Hans Simone Nobuharu Tomasz John Indranil Kelvin Sheng-Che Timothy Sherry
Taylor Rauscher Hess O'Sullivan Strojwas Matsuhashi Haigh Vallishayee Michaels Ciplickas Weiland Cheng Rovner Liao Strojwas Lam Eisenmann Comensoli Yokoyama Brozek Kibarian De Doong Lin Fiscus Lee