Anova Law Group, PLLC
Phase change memory and fabrication method thereof
A phase change memory and a fabrication method are provided. The fabrication method includes: providing a substrate; forming a heating layer on the substrate; forming a phase change layer on and in contact with one sidewall surface of the heating layer. The phase change memory includes: a substrate; a heating layer on the substrate; and a phase change layer on and in contact with one sidewall surface of the heating layer.
Semiconductor Manufacturing International (Beijing) Corporation Semiconductor Manufacturing International (Shanghai) Corporation
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Ru Ling Qing Yong Chao
Zhou Zhang Zhang