Method for fabricating a transformer integrated with a semiconductor structure
A substrate is provided and a top interconnection metal layer and a primary winding layer are formed thereon. Then a passivation layer having a plurality of via exposed parts of the top interconnection metal layer is formed on the substrate. A secondary winding layer and at least a bonding pad are formed on the passivation layer. The bonding pad electrically connects to the top interconnection metal layer through the via.
United Microelectronics Corp.
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Cheng-Chou Tsun-Lai Victor-Chiang Yu-Chia Hua-Chou
Hung Hsu Liang Chen Tseng