CKC & Partners Co., LLC
Memory structure with non-straight word line
A memory structure includes a first memory cell, a first word line and a second word line. The first word line includes a first portion, a second portion and a third portion. The first portion extends from an end of the second portion along a first direction, and the third portion extends from an another end of the second portion along a second direction. An angle between the first direction and the second direction is less than 180°. The second word line includes a forth portion, a fifth portion and a sixth portion. The forth portion extends from an end of the fifth portion along a third direction, and the sixth portion extends from an another end of the fifth portion along a forth direction. An angle between the third direction and the forth direction is less than 180°.
NANYA TECHNOLOGY CORPORATION
G G G G H
G11C G11C G11C G11C H01L
inventional additional additional inventional inventional
Wei-Chih Tseng-Fu
Wang Lu