Weaver Austin Villeneuve & Sampson LLP
Atomic layer deposition and etch in a single plasma chamber for critical dimension control
Methods and apparatuses for critical dimension (CD) control of substrate features using integrated atomic layer deposition (ALD) and etch processes are described herein. Methods include etching to form a mask pattern of features on a substrate having a width that is less than a desired width of structures to be subsequently formed by the mask pattern of features, conformally depositing a passivation layer by ALD that increases the width of the mask pattern of features to the desired width, and etching a layer of the substrate to a desired depth to form the plurality of structures having the desired width.
Lam Research Corporation
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Duming Ganesh Chen Yoshie Xiang Mitchell
Zhang Upadhyaya Xu Kimura Zhou Brooks