Roberts Calderon Safran & Cole, P.C.
Multiple threshold voltage devices
The present disclosure relates to semiconductor structures and, more particularly, to multiple threshold voltage devices and methods of manufacture. The structure includes: a gate dielectric material; a gate material on the gate dielectric material, the gate material comprising different thickness in different regions each of which are structured for devices having a different Vt; and a workfunction material on the gate material.
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Hyung Yoon Rinus Tek Po Jiehui Bharat V.
Choi Lee Shu Krishnan