McClure, Qualey & Rodack, LLP
Semiconductor device and fabricating method thereof
A semiconductor device includes a fin structure, a channel layer and a gate stack. The channel layer is disposed on sidewalls of the fin structure, wherein the channel layer contains a two-dimensional (2D) material. The gate stack is disposed over the channel layer, wherein the gate stack includes a ferroelectric layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chih-Sheng Carlos H. Ling-Yen Meng-Hsuan Tung-Ying Chun-Chieh
Chang Diaz Yeh Hsiao Lee Lu