Muncy, Geissler, Olds & Lowe, P.C.
Semiconductor structure and the forming method thereof
The present invention includes a semiconductor structure having a substrate, a gate structure, and a first spacer. The gate structure includes a floating gate structure, an inter-gate dielectric layer, and a control gate structure. The floating gate structure is disposed on the substrate. The inter-gate dielectric layer is disposed on the floating gate structure. The control gate structure is deposited on the inter-gate dielectric layer and includes an electrode layer, a contact layer and a cap layer. The electrode layer is disposed on the inter-gate dielectric layer. The contact layer is disposed on the electrode layer. The cap layer is disposed on the contact layer. The first spacer is disposed on sidewalls of the control gate structure and covers the electrode layer, the contact layer, and the cap layer. Furthermore, the bottom surface of the first spacer is disposed between the bottom surface and the top surface of the electrode layer.
WINBOND ELECTRONICS CORP.
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H01L H01L G11C H01L
inventional inventional inventional inventional
Chih-Jung Chuan-Chi Yao-Ting
Ni Chou Tsai