McClure, Qualey & Rodack, LLP
Pre-reading method and programming method for 3D NAND flash memory
A pre-reading method and a programming method for a 3D NAND flash memory are provided. The pre-reading method comprises the following steps. A selected string includes a first memory cell, two second memory cells and a plurality of third memory cells. The two second memory cells are adjacent to the first memory cell. The third memory cells are not adjacent to the first memory cell. A first pass voltage is applied on the second memory cells, a second pass voltage is applied on the third memory cells, and a read voltage is applied on the first memory cell via a plurality of word lines for reading a data of the first memory cell. The first pass voltage is larger than the second pass voltage.
MACRONIX INTERNAITONAL CO., LTD.
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Chih-Shen Kuo-Pin Wen-Wei
Chang Chang Yeh