Wood, Herron & Evans LLP
Silicon controlled rectifier with integral deep trench capacitor
Device structures and design structures that include a silicon controlled rectifier, as well as fabrication methods for such device structures. A well is formed in the device layer of a silicon-on-insulator substrate. A silicon controlled rectifier is formed that includes an anode in the well. A deep trench capacitor is formed that includes a plate coupled with the well. The plate of the deep trench capacitor extends from the device layer through a buried insulator layer of the silicon-on-insulator substrate and into a handle wafer of the silicon-on-insulator substrate.
International Business Machines Corporation
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Souvick Robert J. Tom C. James P. Junjun Theodorus E. Christopher S. Chengwen
Mitra Gauthier, Jr. Lee Di Sarro Li Standaert Putnam Pei