Withrow & Terranova, PLLC
Low resistance source/drain regions in III-V transistors
Low resistance source/drain regions in III-V transistors are disclosed. More particularly, a source and a drain are formed from heavily doped III-V materials that have lower resistances than a barrier layer and/or a cap layer under the drain. In an exemplary aspect, the barrier and cap layers are formed over a mobility channel layer and then etched to form source and drain recesses. A source and a drain are then epitaxially grown in the recesses. The source and the drain may include one or more layers, with the top layer having the lowest bandgap, thus helping to lower contact resistance. By lowering the resistance of the source and the drain, the overall resistance of the transistor may be lowered to allow for operation at higher frequencies.
QUALCOMM Incorporated
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Gengming Bin Xia
Tao Yang Li