Method for fabricating semiconductor device
A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region and a periphery region; forming a first buried gate and a second buried gate in the substrate on the memory region; forming a first silicon layer on the substrate on the periphery region; forming a stacked layer on the first silicon layer; forming an epitaxial layer on the substrate between the first buried gate and the second buried gate; and forming a second silicon layer on the epitaxial layer on the memory region and the stacked layer on the periphery region.
UNITED MICROELECTRONICS CORP. Fujian Jinhua Integrated Circuit Co., Ltd.
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Li-Wei Feng-Ming Ying-Chiao Chien-Ting Chien-Cheng Tsung-Ying
Feng Huang Wang Ho Tsai Tsai