McDermott Will & Emery LLP
Dual nitride stressor for semiconductor device and method of manufacturing
A method for manufacturing a semiconductor device includes forming a fin structure over a substrate and forming a first gate structure over a first portion of the fin structure. A first nitride layer is formed over a second portion of the fin structure. The first nitride layer is exposed to ultraviolet radiation. Source/drain regions are formed at the second portion of the fin structure.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chih Chieh Tsung-Lin Yu-Lin Cheng-Yi Chia-Cheng
Yeh Lee Yang Peng Ho