Non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
A memory device includes a magnetic tunnel junction (MTJ) bitcell. The MTJ bitcell includes a first MTJ and a second MTJ. The memory device further includes programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell. The non-reversible state corresponds to a value of the MTJ bitcell that is determined by comparing a first value read at the first MTJ and a second value read at the second MTJ.
QUALCOMM Incorporated
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Xiaochun Wuyang Jungwon Jung Pil Hari M. Matthew Michael Tae Hyun Wah Nam Seung H. Nicholas K. Asaf Kangho Steven M. Xia
Zhu Hao Suh Kim Rao Nowak Kim Hsu Kang Yu Ashkenazi Lee Millendorf Li