Blakely Sokoloff Taylor Zafman LLP
Method of fabricating an ultra low-k dielectric self-aligned via
Methods of fabricating ultra low-k dielectric self-aligned vias are described. In an example, a method of forming a self-aligned via (SAV) in a low-k dielectric film includes forming a trench pattern in a metal nitride hardmask layer formed above a low-k dielectric film formed above a substrate. A via pattern is formed in a masking layer formed above the metal nitride hardmask layer. The via pattern is etched at least partially into the low-k dielectric film, the etching comprising using a plasma etch using a chemistry based on CF4, H2, and a diluent inert gas composition.
Applied Materials, Inc.
H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional
Sean S. Nikolaos Chih-Yang Chia-Ling
Kang Bekiaris Chang Kao