Jianq Chyun IP Office
Resistive random access memory and method of fabricating the same
Provided is a resistive random access memory including a first electrode layer, a second electrode layer, and a variable resistance layer disposed between the first electrode layer and the second electrode layer, wherein the second electrode layer includes a first sublayer, a second sublayer, and a conductive metal oxynitride layer disposed between the first sublayer and the second sublayer.
Winbond Electronics Corp.
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Bo-Lun Shuo-Che Meng-Hung Hsiu-Han Chia-Hua Po-Yen Ting-Ying
Wu Chang Lin Liao Ho Hsu Shen