Jianq Chyun IP Office
Thin film transistor and fabricating method thereof
A method for fabricating a thin film transistor (TFT) is described. A MoNb gate is formed on a substrate, and an insulating layer is formed on the substrate covering the gate. A channel layer is formed on the insulating layer above the gate, and a source/drain is formed on the channel layer to constitute a TFT. Since the gate is constituted of a MoNb layer, the contact resistance thereof can be reduced.
Chunghwa Picture Tubes, Ltd.
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inventional inventional inventional
Wen-Kuang Yu-Chou
Tsao Lee