Method for drying a semiconductor wafer
 The present invention provides a drying method for removing a residual solution from a semiconductor wafer. The semiconductor wafer is placed into a chamber, and then the air pressure of the chamber is lowered from atmospheric pressure to a lower pressure. Next, an inert gas with a predetermined pressure is injected into the chamber to exchange with the dissolved oxygen in the residual solution. The pressure in the chamber is reduced to 0.5.about.100 torr so as to lower the boiling point of the solution and to remove the displaced oxygen. Finally, a heating process is performed to completely evaporate the residual solution on the semiconductor wafer. 
Macronix International Co. Ltd.
H
H01L
inventional
Ching-Yu
Chang