McDermott Will & Emery LLP
Semiconductor device and method for fabricating the same
The present inventive concept has been made in an effort to improve the breakdown voltage of a silicon carbide MOSFET using a trench gate.A semiconductor device according to the present inventive concept includes a p type pillar region disposed below the trench, spaced apart from the trench or a first p type pillar region and a second p type pillar region disposed below the trench and corresponding to two corners of the trench.
Hyundai Motor Company
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Jong Seok Youngkyun Kyoung-Kook Dae Hwan
Lee Jung Hong Chun