Haynes and Boone, LLP
Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy
A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer interfaces with a tunnel barrier and has a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of CoXFeYNiZLWMV or an oxide or nitride of Ru, Ta, Ti, or Si, wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing thereby promoting BCC structure growth in the oxide layer that results in enhanced free layer PMA and improved thermal stability.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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H01L G11C H01L H01F H01L H01F H01F H01L
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Jian Po-Kang Ru-Ying Yuan-Jen Luc Jodi Huanlong Guenole
Zhu Wang Tong Lee Thomas Iwata Liu Jan