Nixon Peabody LLP
Semiconductor device and method for fabricating the same
The semiconductor device of the present invention includes: a semiconductor layer of a first conductivity type; source and drain regions of a second conductivity type, which are formed within the semiconductor layer; a channel region provided between the source and drain regions; and a gate electrode formed over the channel region. The device further includes: a buried region of the first conductivity type, at least part of the buried region being included in the drain region; and a heavily doped region of the second conductivity type. The heavily doped region is provided at least between a surface of the semiconductor layer and the buried region. The concentration of a dopant of the second conductivity type in the heavily doped region is higher than that of the dopant of the second conductivity type in the drain region.
Matsushita Electric Industrial Co., Ltd.
H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional additional additional additional additional inventional inventional
Yoshiaki Ryuma Satoru Seiji Yoshihiro Yuji Seiki Yuji
Hachiya Hirano Takahashi Sogo Mori Ueno Yamaguchi Yamanishi