Birch, Stewart, Kolasch & Birch, LLP
Semiconductor device structure with epitaxial structure and method for forming the same
A method for forming a semiconductor device structure is provided. The method includes forming a first epitaxial structure and a second epitaxial structure over a semiconductor substrate. The method includes forming a dielectric layer over the first epitaxial structure, the second epitaxial structure, and the semiconductor substrate. The method includes forming a first mask layer over the dielectric layer and between the first epitaxial structure and the second epitaxial structure. The method includes forming a second mask layer over the dielectric layer and the first mask layer. The method includes partially removing the dielectric layer covering the first epitaxial structure and the second epitaxial structure. The method includes removing the first mask layer. The method includes forming a first conductive layer and a second conductive layer respectively in the first recess and the second recess.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chih-Hao Tien-Lu Li-Zhen Chia-Hao Jia-Chuan Yu-Ming
Wang Lin Yu Chang You Lin