Oliff & Berridge, PLC
Semiconductor memory device having different distances between gate electrode layers
The invention provides SRAMs that can reduce memory cells in size and correct light proximity effect. Gate electrode layers in a first layer, drain-drain connection layers in a second layer, and drain-gate connection layers in a third layer define conduction layers of a flip-flop. A source contact layer of load transistors are located adjacent end sections of the gate electrode layers, and both of the end sections bend outwardly to avoid contact with the source contact layer.
Seiko Epson Corporation
Y H H
Y10S H01L H01L
additional inventional inventional
Takafumi Masahiro Takashi Satoru
Noda Takeuchi Kumagai Kodaira