Haynes and Boone, LLP
Methods of manufacturing metal-silicide features
A method of manufacturing a microelectronic device including forming a dielectric layer surrounding a dummy feature located over a substrate, removing the dummy feature to form an opening in the dielectric layer, and forming a metal-silicide layer conforming to the opening. The metal-silicide layer may then be annealed.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chii-Ming Chen-Tung Chaing-Ming Shau-Lin Mei-Yun Chih-Wei
Wu Lin Chuang Shue Wang Chang