Fernandez & Associates, LLP
PN diode optical modulators fabricated in rib waveguides
High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.
Luxtera, Inc.
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Bing Guo Liang Roger Lawrence C. Thierry J.
Li Li Koumans Gunn, III Pinguet