Metal oxide semiconductor transistor
The present invention provides a method for fabricating a metal oxide semiconductor transistor. First, a semiconductor substrate is provided and at least a gate is formed on the semiconductor substrate. A protective layer is then formed on the semiconductor substrate and the gate. Subsequently, at least a recess is formed in the semiconductor substrate adjacent to the gate, and then an epitaxial layer is formed in the recess. A lightly doped region is formed in the semiconductor substrate adjacent to the gate. Finally, a spacer is formed on the sidewall of the gate.
United Microelectronics Corp.
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Shih-Chieh Chu-Yin Po-Lun Shyh-Fann Hsuan-Hsu Chih-Chiang
Hsu Tseng Cheng Ting Chen Wu