Anova Law Group, PLLC
Testing structure, and fabrication and testing methods thereof
Testing structures, and their fabrication methods and testing methods are provided. An exemplary testing structure includes a base substrate containing a well region; a first doped epitaxial region in the well region and having a doping type same as a doping type of the well region; a dielectric layer on the base substrate and covering the well region and the first doped epitaxial region; a first contact plug passing through the dielectric layer and electrically connected with the first well region; and a second contact plug and a third contact plug. The second contact plug and the third contact plug pass through the dielectric layer and electrically connected with the first doped epitaxial region. The second contact plug is independent from the third contact plug and between the first contact plug and the third contact plug.
Semiconductor Manufacturing International (Shanghai) Corporation Semiconductor Manufacturing International (Beijing) Corporation
H H H H H G H
H01L H01L H01L H01L H01L G01R H01L
inventional inventional inventional inventional inventional inventional inventional
Yong
Li