Davis Wright Tremaine LLP
System for maintaining back gate threshold voltage in three dimensional NAND memory
In a nonvolatile memory array in which a NAND string includes a back gate that has a charge storage element, the threshold voltage of the back gate is monitored, and if the threshold voltage deviates from a desired threshold voltage range, charge is added to, or removed from the charge storage element to return the threshold voltage to the desired threshold voltage range.
SanDisk Technologies Inc.
G G G G G
G11C G11C G11C G11C G11C
inventional inventional inventional inventional inventional
Chris Nga Yee Gautam Ashok Man Lung Jian Alexander Kwok-Tung Yingda Seungpil
Avila Dusija Mui Chen Mak Dong Lee