Ditthavong & Steiner, P.C.
Semiconductor device with diffusion barrier film and method of manufacturing the same
A method of forming a diffusion barrier film over fins and the resulting device are provided. Embodiments include forming silicon fins over a substrate; depositing a borosilicate glass (BSG) liner cap over a first set of the silicon fins; depositing a phosphosilicate (PSG) liner cap over a second set of the silicon fins; and depositing a silicon oxycarbide (SiOC) diffusion barrier film over the BSG and PSG liner caps.
GLOBALFOUNDRIES INC.
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Jinping Huy Songkram In Soo
Liu Cao Srivathanakul Jung