Myers Bigel, P.A.
Multi-layer fin field effect transistor devices and methods of forming the same
Multi-layer fin field effect transistor devices and methods of forming the same are provided. The devices may include a fin shaped channel structure on a substrate. The channel structure may include stressor layers stacked on the substrate and a channel layer between the stressor layers, and the stressor layers may include a semiconductor material having a wide bandgap that is sufficient to confine carriers to the channel layer and having a lattice constant different from a lattice constant of the channel layer to induce stress in the channel layer. The devices may also include source/drain regions on respective first opposing sides of the channel structure and a gate on second opposing sides of the channel structure and between the source/drain regions.
SAMSUNG ELECTRONICS CO., LTD.
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Titash Wei-E Robert C. Borna J. Mark S.
Rakshit Wang Bowen Obradovic Rodder