Harness, Dickey & Pierce, P.L.C.
E-mode high electron mobility transistors and methods of manufacturing the same
An Enhancement-mode (E-mode) high electron mobility transistor (HEMT) includes a channel layer with a 2-Dimensional Electron Gas (2DEG), a barrier layer inducing the 2DEG in the channel layer, source and drain electrodes on the barrier layer, a depletion layer on the barrier layer between the source and drain electrodes, and a gate electrode on the depletion layer. The barrier layer is recessed below the gate electrode and the depletion layer covers a surface of the recess and extends onto the barrier layer around the recess.
Samsung Electronics Co., Ltd.
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additional additional inventional inventional
Hyuk-soon Jae-Kwang In-jun Jae-joon Jong-seob Jong-bong Ki-ha
Choi Shin Hwang Oh Kim Ha Hong