Westerman, Hattori, Daniels & Adrian, LLP.
Method for manufacturing semiconductor device
After a bottom electrode film is formed, a ferroelectric film is formed on the bottom electrode film. Then, a heat treatment is performed for the ferroelectric film in an oxidizing atmosphere so as to crystallize the ferroelectric film. Then, a top electrode film is formed on the ferroelectric film. In the heat treatment (i.e., annealing for crystallization), a flow rate of oxidizing gas is set to be in a range of from 10 sccm to 100 sccm.
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Wensheng
Wang