Hauptman Ham, LLP
Semiconductor device comprising surface semiconductor region for increased breakdown strength
A semiconductor device includes an n-type base substrate; a p-type first region; a p-type surface region having a plurality of second corner portions and a plurality of second side portions surrounding the first region. The p-type surface region has a dopant concentration lower than a dopant concentration of the first region. The semiconductor device further includes a field plate in a region overlapping with the surface region in a plan view by way of an insulation film. The field plate has a plurality of field plate corner portions and a plurality of field plate side portions. A relationship of L1>L2 is established at least at a portion of the surface region or a relationship of FP1>FP2 is established at least at a portion of the field plate is satisfied. A withstand voltage of the second side portion is lower than a withstand voltage of the second corner portion.
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
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Hideyuki Yoshifumi Hirokazu
Nakamura Matsuzaki Ito