Haynes and Boone, LLP
Resistive switching random access memory with asymmetric source and drain
A resistive random access memory (RRAM) structure includes a resistive memory element formed on a semiconductor substrate and designed for data storage. The resistive element includes a resistive material layer. The resistive element further includes first and second electrodes interposed by the resistive material layer. The resistive element further includes a field effect transistor (FET) formed on the semiconductor substrate and coupled with the resistive memory element, wherein the FET includes asymmetric source and drain, the drain having a higher doping concentration than the source. The resistive memory element is coupled with the drain.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Chin-Chieh Kuo-Chi Hsia-Wei Chih-Yang Yu-Wen Wen-Ting
Yang Tu Chen Chang Liao Chu