Volentine & Whitt, P.L.L.C.
Nonvolatile memory device and methods of programming and reading the same
A read method of a non-volatile memory device includes reading an initial threshold voltage value of an index cell from threshold voltage information cells that store information indicating the initial threshold voltage, determining a current threshold voltage value from the index cell, and comparing the initial threshold voltage value and the current threshold voltage value to calculate a shifted threshold voltage level of the index cell. A read voltage is changed by the shifted threshold voltage level to read user data using the changed read voltage.
Samsung Electronics Co., Ltd.
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additional inventional inventional
Dong-Hyuk Seung-Jae Dong-Ku
Chae Lee Kang