Slater Matsil, LLP
Resistive random access memory (RRAM) with improved forming voltage characteristics and method for making
The present disclosure provides resistive random access memory (RRAM) structures and methods of making the same. The RRAM structures include a bottom electrode having protruded step portion that allows formation of a self-aligned conductive path with a top electrode during operation. The protruded step portion may have an inclination angle of about 30 degrees to 150 degrees. Multiple RRAM structures may be formed by etching through a RRAM stack.
Taiwan Semiconductor Manufacturing Company
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Chung-Cheng Jonathan Tehan Kuo-Chi Po-Hao
Chou Chen Tu Lee