Slater & Matsil, L.L.P.
FinFETs having dielectric punch-through stoppers
A semiconductor structure includes a semiconductor substrate; a planar transistor on a first portion of the semiconductor substrate, wherein the first portion of the semiconductor substrate has a first top surface; and a multiple-gate transistor on a second portion of the semiconductor substrate. The second portion of the semiconductor substrate is recessed from the first top surface to form a fin of the multiple-gate transistor. The fin is electrically isolated from the semiconductor substrate by an insulator.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chen-Hua Cheng-Hung Chen-Nan
Yu Chang Yeh