Lorimer Labs
Method for producing high resolution nano-imprinting masters
A method for producing high resolution nano-imprinting masters is disclosed. The method inverts the negative features of an exposed and developed positive e-beam resist to positive features in the patterned silicon nitride layer of the nano-imprinting master. A first, oxidation resistant, mask layer is used to pattern a DLC layer deposited on the silicon nitride layer. After patterning the DLC layer, the negative features of the DLC layer are filled with deposited metal, which creates a second mask layer subsequent to the removal of the remaining DLC layer. The second mask layer is used to etch the silicon nitride layer, creating the final nano-imprinting master.
Hitachi Global Storage Technologies Netherlands B.V.
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G03F G03F B82Y B82Y G03F
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Jui-Lung Henry Hung Zvonimir Z.
Li Yang Bandic