Marger Johnson & McCollom, P.C.
Method of forming a lower electrode of a capacitor
In an embodiment, a method of forming a lower electrode of a capacitor in a semiconductor memory device includes etching a mold oxide layer to have at a cylindrical structure, resulting in an electrode with increased surface area. The cylindrical structure may have more than one radius. This increased surface area results in an increased capacitance. An excessive etch phenomenon, which occurs because a sacrificial oxide layer is etched at a higher rate than the mold oxide layer, is avoided.
Samsung Electronic Co., Ltd.
H H
H01L H01L
additional inventional
Jung-Wook Young-Joo
Kim Cho