Post Law Group, PLC
Silicon carbide semiconductor film-forming apparatus and film-forming method using the same
In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses.
TOYOTA JIDOSHA KABUSHIKI KAISHA CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY DENSO CORPORATION NuFlare Technology, Inc.
H C H H H C C H C C C C C C C C
H01L C23C H01L H01L H01L C23C C23C H01L C23C C23C C30B C30B C23C C23C C30B C23C
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Koichi Masahiko Ayumu Hiroaki Masami Hidekazu Hideki Isaho
Nishikawa Ito Adachi Fujibayashi Naito Tsuchida Ito Kamata