Knobbe, Martens, Olson & Bear, LLP
Multi-layer raised frame in bulk acoustic wave device
Aspects of this disclosure relate to a bulk acoustic wave device that includes a multi-layer raised frame structure. The multi-layer raised frame structure includes a first raised frame layer positioned between a first electrode and a second electrode of the bulk acoustic wave device. The first raised frame layer has a lower acoustic impedance than the first electrode. The first raised frame layer and the second raised frame layer overlap in an active region of the bulk acoustic wave device. Related filters, multiplexers, packaged modules, wireless communication devices, and methods are disclosed.
Skyworks Global Pte. Ltd.
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Jiansong Kwang Jae
Liu Shin