Harness, Dickey & Pierce
Methods of programming non-volatile memory cells
A method of programming a non-volatile memory cell includes programming a first bit of multi-bit data by setting a threshold voltage of the non-volatile memory cell to a first voltage level within a first of a plurality of threshold voltage distributions. A second bit of the multi-bit data is programmed by setting the threshold voltage to a second voltage level based on a value of the second bit. The second voltage level is the same as the first voltage level if the second bit is a first value and the second voltage level is within a second of the plurality of threshold voltage distributions if the second bit is a second value. A third bit of the multi-bit data is programmed by setting the threshold voltage to a third voltage level based on a value of the third bit.
Samsung Electronics Co, Ltd.
G G G
G11C G11C G11C
additional additional inventional
Seung-hwan Kyoung-lae Sung-jae Young-moon Ju-hee Yoon-dong Seung-hoon
Song Cho Byun Kim Park Park Lee