The Marbury Law Group PLLC
Three dimensional NAND device containing dielectric pillars for a buried source line and method of making thereof
A three-dimensional memory device includes an alternating stack of electrically conductive layers and insulating layers located over a substrate, an array of memory stack structures, each memory stack structure extending through the alternating stack and including a memory film and a semiconductor channel laterally surrounded by the memory film, and an array of dielectric pillars located between the alternating stack and the substrate.
SANDISK TECHNOLOGIES LLC
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Masatoshi Chun Yanli Jin
Nishikawa Ge Zhang Liu