Posz & Bethards, PLC
Semiconductor pressure sensor having strain gauge and circuit portion on semiconductor substrate
A semiconductor pressure sensor includes a SOI substrate composed of first and second silicon substrates. A diaphragm portion is formed by the first silicon substrate as a bottom of a recess portion formed in the second silicon substrate. Strain gauges are formed on the diaphragm portion, and a circuit portion is formed on the first silicon substrate at a region other than the diaphragm portion. A LOCOS film for isolating the strain gauges from the circuit portion is formed on the first silicon substrate outside the outermost peripheral portion of the diaphragm portion.
Denso Corporation
H B G B G H B
H01L B81C G01L B81B G01L H01L B81C
inventional additional inventional additional inventional inventional inventional
Yasutoshi Inao Kazuaki Seiichiro
Suzuki Toyoda Hamamoto Ishio