Wood, Herron & Evans LLP
Device structures compatible with fin-type field-effect transistor technologies
Device structures, design structures, and fabrication methods for fin-type field-effect transistor integrated circuit technologies. First and second fins, which constitute electrodes of the device structure, are each comprised of a first semiconductor material. The second fin is formed adjacent to the first fin to define a gap separating the first and second fins. Positioned in the gap is a layer comprised of a second semiconductor material.
International Business Machines Corporation
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H01L H01L H01L G06F
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Robert J. Junjun Jeffrey B.
Gauthier, Jr. Li Johnson