NSIP Law
Phase-change memory device using Sb-Se metal alloy and method of fabricating the same
Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.
Electronics and Telecommunications Research Institute
Seung Yun Kyu Jeong Nam Yeal Sung Min Byoung Gon Sang Ouk Young Sam
Lee Choi Lee Yoon Yu Ryu Park