Antonelli, Terry, Stout & Kraus
Microwave-excited plasma processing apparatus
 The present invention relates to a plasma treatment apparatus for making plasma surface processing of a specimen such as thin-film formation, etching, sputtering or plasma oxidation by use of plasma produced through microwave discharge. In a specimen chamber provided with a specimen table for holding at least one specimen thereon, a microwave is introduced from a direction intersecting a magnetic line of force so as to propagate in the longitudinal direction of an ECR region or in a direction along the plane of the ECR region. Since the microwave is introduced from the transverse direction of the specimen chamber, the provision of a microwave introducing window at an upper portion of the specimen chamber is not required and hence a counter electrode for applying an electric field to the specimen can be disposed at the upper portion of the specimen chamber, thereby making it possible to apply a uniform electric field to the specimen so that the specimen is subjected to a uniform treatment. 
Hitachi Engineering and Services Co., Ltd. Hitachi, Ltd.
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Michio Kazuo Tadasi Takuya
Ohue Suzuki Sonobe Fukuda