Slater & Matsil, L.L.P.
System and method for source/drain contact processing
System and method for reducing contact resistance and prevent variations due to misalignment of contacts is disclosed. A preferred embodiment comprises a non-planar transistor with source/drain regions located within a fin. An inter-layer dielectric overlies the non-planar transistor, and contacts are formed to the source/drain region through the inter-layer dielectric. The contacts preferably come into contact with multiple surfaces of the fin so as to increase the contact area between the contacts and the fin.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional additional additional
Chen-Nan Yu-Rung Cheng-Hung Chen-Hua
Yeh Hsu Chang Yu