Patterson & Sheridan, LLP
Semiconductor device
A semiconductor device comprising: a Metal Oxide Semiconductor Field Effect Transistor including: a semiconductor substrate including a first semiconductor layer of a first conductivity type; second semiconductor layers of a second conductivity type extending in a depth direction from one surface of the semiconductor substrate, and having space each other; a first diode including a fifth semiconductor layer of the second conductivity type contacting the second semiconductor layer in one surface side of the semiconductor substrate, the first semiconductor layer and the second semiconductor layers; and an anode of the second diode connected to an anode of the first diode.
KABUSHIKI KAISHA TOSHIBA
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Wataru Shunji Syotaro Toshiyuki Hiroaki
Saito Taniuchi Ono Naka Yamashita