Slater & Matsil, L.L.P.
Porous Si as CMOS image sensor ARC layer
A semiconductor device is provided. The semiconductor device includes metallization layers supported by a substrate, a diode and a partially doped silicon layer disposed over the metallization layers, a buffer layer disposed over the diode and the partially doped silicon layer; and an anti-reflective coating disposed over the buffer layer, the anti-reflective coating formed from a porous silicon.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H
H01L H01L
inventional inventional
Shyh-Fann Ching-Chun Yen-Ting
Ting Wang Chiang