Posz Law Group, PLC
Semiconductor device having heat radiation plate and bonding member
A semiconductor device includes a heat generation element; a bonding member; first and second heat radiation plates disposed on first and second sides of the heat generation element through the bonding member; a heat radiation block disposed between the first heat radiation plate and the heat generation element through the bonding member; and a resin mold. The heat radiation block has a thickness in a range between 0.5 mm and 1.5 mm. The semiconductor device has high reliability of the bonding member.
Denso Corporation
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Yoshimi Kuniaki Nobuyuki Naohiko
Nakase Mamitsu Kato Hirano