Cantor Colburn LLP
Epitaxial silicon germanium fin formation using sacrificial silicon fin templates
A method of forming semiconductor fins includes forming a plurality of sacrificial template fins from a first semiconductor material; epitaxially growing fins of a second semiconductor material on exposed sidewall surfaces of the sacrificial template fins; and removing the plurality of sacrificial template fins.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Chih-Chao Hong Junli Juntao
Yang He Wang Li