McDermott Will & Emery LLP
Method for forming impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device
A method of forming an impurity-introduced layer is disclosed. The method includes at least a step of forming a resist pattern on a principal face of a solid substrate such as a silicon substrate (S27); a step of introducing impurity into the solid substrate through plasma-doping in ion mode (S23), a step of removing a resist (S28), a step of cleaning metal contamination and particles attached to a surface of the solid substrate (S25a); a step of anneal (S26). The step of removing a resist (S28) irradiates the resist with oxygen-plasma or brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the resist. The step of cleaning (S25a) brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate. The step of removing a resist (S28) and the step of cleaning (S25a) can be conducted simultaneously by bringing mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate.
Panasonic Corporation
H H
H01L H01L
inventional inventional
Tomohiro Ichiro Yuichiro Hiroyuki Hideki Katsumi Satoshi Bunji Cheng-Guo
Okumura Nakayama Sasaki Ito Tamura Okashita Maeshima Mizuno Jin