Robinson Intellectual Property Law Office
Semiconductor device and manufacturing method of semiconductor device
A semiconductor device enabling high integration is provided. The semiconductor device includes a plug, two capacitors, and two transistors sharing one oxide semiconductor. Each of the transistors includes a stacked-layer structure of a gate insulator and a gate electrode over the oxide semiconductor and an insulator in contact with a side surface of the gate electrode. An opening between the two gate electrodes exposes the insulators in contact with the side surfaces of the gate electrodes, and the plug is in the opening. The capacitor is directly provided over the oxide semiconductor. The side surface area of the capacitor is larger than the projected area of the capacitor.
Semiconductor Energy Laboratory Co., Ltd.
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Tatsuya Shuhei Kiyoshi Takanori
Onuki Nagatsuka Kato Matsuzaki