Hill, Van Santen, Steadman & Simpson
Semiconductor laser
 A new laser structure having self-aligned junction stripe geometry grown by the MO CVD process is disclosed. The laser is grown on a groove-etched substrate and has a DH structure with a small V-shaped active region. A current path in the V-shaped region is formed using anomalous zinc diffusion during growth, which allows a broad area metal contact for both sides of the wafer. 
Sony Corporation
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Osamu Yoshifumi
Matsuda Mori