Slater Matsil, LLP
Fin field effect transistor (FinFET) device structure with uneven gate structure and method for forming the same
A FinFET device structure is provided. The FinFET device structure includes an isolation structure formed over a substrate and a fin structure formed over the substrate. The FinFET device structure includes a first gate structure and a second gate structure formed over the fin structure, and the first gate structure has a first width in a direction parallel to the fin structure, the second gate structure has a second width in a direction parallel to the fin structure, and the first width is smaller than the second width. The first gate structure includes a first work function layer having a first height. The second gate structure includes a second work function layer having a second height and a gap between the first height and the second height is in a range from about 1 nm to about 6 nm.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chai-Wei Po-Chi Che-Cheng Yi-Cheng
Chang Wu Chang Chao