Patent Capital Group
Gallium nitride NMOS on Si (111) co-integrated with a silicon PMOS
A complementary metal oxide semiconductor (CMOS) device that includes a gallium nitride n-type MOS and a silicon P-type MOS is disclosed. The device includes silicon 111 substrate, a gallium nitride transistor formed in a trench in the silicon 111 substrate, the gallium nitride transistor comprising a source electrode, a gate electrode, and a drain electrode. The device further includes a silicon/polysilicon layer formed over the gallium nitride transistor.
Intel Corporation
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Valluri R. Marko Sansaptak Han Wui
Rao Radosavljevic Dasgupta Then