Edell, Shapiro & Finnan, LLC
Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
Provided is a technique which includes forming on a substrate an oxide film containing silicon or a metal element and doped with a dopant by performing a cycle a predetermined number of times, wherein the cycle includes sequentially and non-simultaneously performing: (a) supplying a first gas to the substrate wherein the first gas is free of chlorine and contains boron or phosphorus as the dopant; (b) supplying a second gas to the substrate wherein the second gas contains silicon or the metal element; and (c) supplying a third gas to the substrate wherein the third gas contains oxygen.
Kokusai Electric Corporation
C H H H C H C H C
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Yushin Satoshi Takafumi Hiroki
Takasawa Shimamoto Nitta Yamashita