Hauptman Ham, LLP
Mechanisms of forming damascene interconnect structures
A method of forming a conductive structure includes forming a first opening and a second opening in a dielectric layer on a substrate, wherein the first opening is narrower than the second opening. The method further includes depositing a diffusion barrier layer to line the first opening and the second opening. The method further includes forming a metal layer over the diffusion barrier layer to fill at least portions of the first opening and the second opening, wherein a maximum thickness of the metal layer in the first opening is greater than a maximum thickness of the metal layer in the second opening.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Syun-Ming Chien-An Hung-Wen Ming Hsing Wen-Jiun Chun-Chieh
Jang Chen Su Tsai Liu Lin