Myers Bigel Sibley & Sajovec, PA
Methods of forming a multi-layered structure using an atomic layer deposition process and methods of forming a capacitor of an integrated circuit device
Multi-layered structures formed using atomic-layer deposition processes include multiple metal oxide layers wherein the metal oxide layers are formed without the presence of interlayer oxide layers and may include different metal oxide compositions.
Samsung Electronics Co., Ltd.
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Sung-Tae Seung-Hwan Jae-Soon Han-Mei Jong-Wan Gab-Jin Ki-Chul Young-Sun
Kim Lee Lim Choi Kwon Nam Kim Kim