Tung & Assoc.
Method for reducing a low volatility byproduct from a wafer surface following an etching process
A method for in-situ reduction of volatile residual contamination on a semiconductor process wafer following a plasma etching process including providing an ambient controlled chamber for accepting transfer of a semiconductor process wafer under controlled ambient conditions following a plasma etching process; providing a heat exchange surface disposed with the ambient controlled chamber in heat exchange relationship with means for heating the heat exchange surface; transferring a semiconductor process wafer having volatile residual contamination under controlled ambient conditions to the ambient controlled chamber; mounting the semiconductor process wafer in heat exchange relationship with the heat exchange surface; and, heating in-situ the heat exchange surface for a time period to thereby heat the semiconductor process wafer to vaporize the volatile residual contamination on the semiconductor process wafer while simultaneously removing a resulting vapor from the ambient controlled chamber.
Taiwan Semiconductor Manufacturing Co., Ltd
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additional inventional inventional additional
Zhi-Yong Yei-Ren Hung-Wen Chi-How
Chang Chen Chen Wu