Tutunjian & Bitetto, P.C.
Integrated strained stacked nanosheet FET
Methods of forming a semiconductor device include forming stress liners in contact with both ends of a fin of alternating channel material and sacrificial material layers. The stress liners exert a stress on the fin. The sacrificial material is etched away from the fin, such that the layers of the channel material are suspended between the stress liners. A gate stack on the suspended layers of channel material.
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inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional additional inventional
Ramachandra Xin Kangguo Juntao
Divakaruni Miao Cheng Li