F. Chau & Associates, LLC
Multi-bit flash memory device and program method thereof
A method for programming a flash memory device including a plurality of memory cells, each storing multi-bit data, includes reading data from selected memory cells. An error of the read data is detected and corrected. Input program data is programmed into the selected memory cells based upon the error-corrected read data.
Samsung Electronics Co., Ltd.
G G G G G
G11C G11C G11C G11C G11C
inventional inventional additional additional additional
Seung-Jae
Lee