Field emission display having carbon nanotube emitter and method of manufacturing the same
Provided is a field emission display (FED) with a carbon nanotube emitter and a method of manufacturing the same. A gate stack that surrounds the CNT emitter has a mask layer that covers an emitter electrode adjacent to the CNT emitter, and a gate insulating film, a gate electrode, a focus gate insulating film (SiOx, X<2), and a focus gate electrode formed on the mask layer. The focus gate insulating film has a thickness 2 μm or more, and preferably 3˜15 μm and is preferably made using PECVD. A flow rate of silane and nitric acid for forming the focus gate insulating film and/or the gate insulating film are maintained at 50˜700 sccm and 700˜4,500 sccm, respectively. By doing so and by making the oxide thick, the oxide is less apt to crack and thus less apt to generate a leakage current.
Samsung SDI Co., Ltd.
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Jun-Hee Andrei
Choi Zoulkarneev