Slater Matsil, LLP
Silicide process using OD spacers
A device includes a semiconductor substrate including an active region. The active region includes a first sidewall. An isolation region extends from a top surface of the semiconductor substrate into the semiconductor substrate. The isolation region has a second sidewall, wherein a lower portion of the first sidewall joins a lower portion of the second sidewall to form an interface. A dielectric spacer is disposed on an upper portion of the first sidewall. A silicide region is over and contacting the active region. A sidewall of the silicide region contacts the dielectric spacer, and the dielectric spacer has a top surface substantially lower than a top surface of the silicide region.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Ping-Pang Chih-Ming Yu-Jen
Hsieh Lee Chen