IP & T Group LLP
3-D non-volatile memory device and method of manufacturing the same
A three dimensional (3-D) non-volatile memory device includes a pipe gate including a first pipe gate, a second pipe gate formed on the first pipe gate, and a first interlayer insulating layer interposed between the first pipe gate and the second pipe gate, word lines alternately stacked with second interlayer insulating layers on the pipe gate, a pipe channel buried within the pipe gate, and memory cell channels coupled to the pipe channel and arranged to pass through the word lines and the second interlayer insulating layers.
SK Hynix Inc.
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H01L H01L H01L
inventional inventional inventional
Sang Hyun Seo Hyun Byung Soo Sun Mi
Oh Lee Park Park