Green, Howard & Mughal LLP
InN tunnel junction contacts for P-channel GaN
Methods and apparatus for semiconductor manufacture are disclosed. An example apparatus includes a Gallium Nitride (GaN) substrate; a p-type GaN region positioned on the GaN substrate; a p-type Indium Nitride (InN) region positioned on the GaN substrate and sharing an interface with the p-type GaN region; and a n-type Indium Gallium Nitride (InGaN) region positioned on the GaN substrate and sharing an interface with the p-type InN region.
Intel Corporation
H H H H H H
H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional
Marko Sansaptak Han Wui
Radosavljevic Dasgupta Then