Hultquist PLLC
In situ generation of RuO4 for ALD of Ru and Ru related materials
Apparatus and method for generating ruthenium tetraoxide in situ for use in vapor deposition, e.g., atomic layer deposition (ALD), of ruthenium-containing films on microelectronic device substrates. The ruthenium tetraoxide can be generated on demand by reaction of ruthenium or ruthenium dioxide with an oxic gas such as oxygen or ozone. In one implementation, ruthenium tetraoxide thus generated is utilized with a strontium organometallic precursor for atomic layer deposition of strontium ruthenate films of extremely high smoothness and purity.
Advanced Technology Materials, Inc.
H H H H C H H H H H C C
H01L H01L H01L H01L C23C H01G H01G H01G H01L H01L C23C C23C
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Thomas M. Weimin Chongying
Cameron Li Xu