Slater Matsil, LLP
3DIC structure and methods of forming
A structure and a method of forming are provided. The structure includes a first dielectric layer overlying a first substrate. A first connection pad is disposed in a top surface of the first dielectric layer and contacts a first redistribution line. A first dummy pad is disposed in the top surface of the first dielectric layer, the first dummy pad contacting the first redistribution line. A second dielectric layer overlies a second substrate. A second connection pad and a second dummy pad are disposed in the top surface of the second dielectric layer, the second connection pad bonded to the first connection pad, and the first dummy pad positioned in a manner that is offset from the second dummy pad so that the first dummy pad and the second dummy pad do not contact each other.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Sheng-Chau Zhi-Yang Cheng-Hsien Yung-Lung Kuo-Ming
Chen Wang Chou Lin Wu