Slater & Matsil, L.L.P.
Profile of flash memory cells
A semiconductor structure includes a semiconductor substrate; a tunneling layer on the semiconductor substrate; a source region adjacent the tunneling layer; and a floating gate on the tunneling layer. The floating gate comprises a first edge having an upper portion and a lower portion, wherein the lower portion is recessed from the upper portion. The semiconductor structure further includes a blocking layer on the floating gate, wherein the blocking layer has a first edge facing a same direction as the first edge of the floating gate.
Taiwan Semiconductor Manufacturing Company, Ltd
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Chu-Wei Chia-Shiung Shih-Chang Chi-Hsin
Chang Tsai Liu Lo