Birch, Stewart, Kolasch & Birch, LLP
Semiconductor device
The invention provides a semiconductor device. The semiconductor device includes a buried oxide layer disposed on a substrate. A semiconductor layer having a first conduction type is disposed on the buried oxide layer. A first well doped region having a second conduction type is disposed in the semiconductor layer. A cathode doped region having the second conduction type is disposed in the first well doped region. A first anode doped region having the first conduction type is disposed in the first well doped region, separated from the cathode doped region. A first distance from a bottom boundary of the first anode doped region to a top surface of the semiconductor layer is greater than a second distance from the bottom boundary to an interface between the semiconductor layer and the buried oxide layer.
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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Manoj Hsiung-Shih Jui-Chun Chia-Hao Pei-Heng
Kumar Chang Chang Lee Hung