Haynes and Boone, LLP
Post development treatment method and material for shrinking critical dimension of photoresist layer
A lithography method is provided in accordance with some embodiments. The lithography method includes forming a patterned photoresist on a material layer, applying a first bonding material to a side surface of the patterned photoresist, performing a treatment on the first bonding material to bond the first bonding material to the side surface of the patterned photoresist, wherein the treatment creates a bonding site on the first bonding material configured to bond to a second bonding material, applying the second bonding material to a side surface of the first bonding material, and patterning the material layer by selectively processing a portion of the material layer exposed by the patterned photoresist, the first bonding material, and the second bonding material.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
G G G G
G03F G03F G03F G03F
inventional inventional inventional inventional
Ching-Yu Siao-Shan
Chang Wang