Eschweiler & Associates, LLC
Copper-containing layer on under-bump metallization layer
A semiconductor device includes an under-bump metallization (UBM) layer over a substrate. The semiconductor device also includes a copper-containing layer having a base portion over the UBM layer. The semiconductor device further includes a solder bump over the UBM layer and over the copper-containing layer. The base portion is embedded in the solder bump. The copper-containing layer has a cylindrical shape and includes at least two segments separated by at least two openings. A first total area (A) of the at least two openings is greater than about 3% of a second total area (B) of the at least two segments. The first total area (A) is less than about 70% of the second total area (B) of the at least two segments.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Ming-Che Han-Ping Yu-Feng Chih-Hang Chun-Hung Kai-Chiang
Ho Pu Chen Tung Lin Wu