Method for eliminating of cycling-induced electron trapping in the tunneling oxide of 5 volt only flash EEPROMS
 There is provided an improved method for eliminating of cycling-induced electron trapping in the tunneling oxide of flash EEPROM devices. A relatively low positive pulse voltage is applied to a source region of the EEPROM devices during an entire erase cycle. Simultaneously, a negative ramp voltage is applied to a control gate of the EEPROM devices during the entire erase cycle so as to accomplish an averaging tunneling field from the beginning of the erase cycle to the end of the erase cycle. 
Advanced Micro Devices, Inc.
G
G11C
inventional
Chi Chung K. Yuan Michael A.
Chang Chang Tang Van Buskirk