Luedeka, Neely & Graham
Single channel four transistor SRAM
A method of forming a memory cell according to the present invention. A first pass gate transistor is formed of a first transistor type. The first pass gate transistor has a gate oxide with a first thickness. The source of the first pass gate transistor is electrically connected to a first bit line, and the drain of the first pass gate transistor is electrically connected to a first state node. The gate of the first pass gate transistor is electrically connected to a memory cell enable line. A second pass gate transistor is also formed of the first transistor type. The second pass gate transistor also has a gate oxide with the first thickness. The source of the second pass gate transistor is electrically connected to a second bit line, and the drain of the second pass gate transistor is electrically connected to a second state node. The gate of the second pass gate transistor is electrically connected to the memory cell enable line. A first state node transistor is also formed of the first transistor type. The first state node transistor has a gate oxide with a second thickness. The source of the first state node transistor is electrically connected to the first state node, and the drain of the first state node transistor is electrically connected to a ground line. The gate of the first state node is electrically connected to the second state node. A second state node transistor is also formed of the first transistor type. The second state node transistor also has a gate oxide with the second thickness. The source of the second state node transistor is electrically connected to the second state node, and the drain of the second state node transistor is electrically connected to the ground line. The gate of the second state node is electrically connected to the first state node.
LSI Logic Corporation
G H
G11C H01L
inventional inventional
Steven M. Yauh-Ching Franklin Myron J. Weiran Ruggero Gary K. Minh Tien Ramnath
Peterson Liu Duan Buer Kong Castagnetti Giust Nguyen Venkatraman