Haynes and Boone, LLP
Method of fabricating a semiconductor device
The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a plurality of circuit devices over a substrate. The method includes forming an organic layer over the substrate. The organic layer is formed over the plurality of circuit devices. The method includes polishing the organic layer to planarize a surface of the organic layer. The organic layer is free of being thermally treated prior to the polishing. The organic material is un-cross-linked during the polishing. The method includes depositing a LT-film over the planarized surface of the organic layer. The depositing is performed at a temperature less than about 150 degrees Celsius. The depositing is also performed without using a spin coating process. The method includes forming a patterned photoresist layer over the LT-film.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H H H H
H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional
Ching-Yu Kuei-Liang Ming-Feng
Chang Lu Shieh