Scalable and reliable integrated circuit inter-level dielectric
 An inter-level dielectric (ILD) is formed from a lower barrier layer comprising a conformal silicon oxynitride layer, a gap fill layer comprising a high-density plasma (HDP) oxide and a cap layer. The use of HDP oxide as a gap fill layer enables better control of the ILD thickness, avoids outgasing problems, facilitates via formation and reduces planarization. 
Advanced Micro Devices, Inc.
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Yu Kashmir Richard J. Hung-Sheng
Sun Sahota Huang Chen