Etching solution for selectively removing tantalum nitride over titanium nitride during manufacture of a semiconductor device
Described herein is an etching solution comprising water; phosphoric acid solution (aqueous); a fluoride ion source; and a water-miscible organic solvent. Such compositions are useful for the selective removal of tantalum nitride over titanium nitride from a microelectronic device having such material(s) thereon during its manufacture.
VERSUM MATERIALS US, LLC
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Wen Dar Yi-Chia
Liu Lee