Oblon, McClelland, Maier & Neustadt, L.L.P.
Power semiconductor device and method for manufacturing same
A semiconductor device includes a semiconductor substrate of a first conductivity type, a drift layer of the first conductivity type which is formed on a first main surface of the semiconductor substrate, a second well region of a second conductivity type which is formed to surround a cell region of the drift layer, and a source pad for electrically connecting the second well regions and a source region of the cell region through a first well contact hole provided to penetrate a gate insulating film on the second well region, a second well contact hole provided to penetrate a field insulating film on the second well region and a source contact hole.
Mitsubishi Electric Corporation
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Shiro Yukiyasu Shuhei Naruhisa Masayuki Shoyu Akihiko Kenichi
Hino Nakao Nakata Miura Imaizumi Watanabe Furukawa Ohtsuka