Seyfarth Shaw LLP
Switching film structure for magnetic random access memory (MRAM) cell
An MRAM cell may include a magnetic tunneling junction (MTJ). The MTJ includes a pin layer, a barrier layer, a free layer, and a capping layer. The MRAM cell further includes a bidirectional diode selector, directly coupled to an electrode of the MTJ, to enable access to the MTJ.
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Wei-Chuan Kangho Seung Hyuk Yu Xia
Chen Lee Kang Lu Li