Fitzpatrick, Cella, Harper & Scinto
Forming a non-monocrystalline silicone semiconductor having pin junction including laminated intrinsic layers
 A non-monocrystalline silicon semiconductor device having a pin junction is formed by forming a first doped semiconductor layer of a first conductivity disposed on a substrate. A first intrinsic layer is deposited on the first doped semiconductor layer employing RF energy. A second intrinsic layer is deposited on the first intrinsic layer employing microwave energy and RF energy simultaneously. A semiconductor precursor gas, including germanium and a semiconductor precursor gas including silicon are supplied to the second intrinsic layer during its formation. The content of the semiconductor precursor gas containing germanium is greater than the semiconductor gas including silicon in the layer thickness direction in the second intrinsic layer at a P-layer side. A second doped semiconductor layer is deposited on the second intrinsic layer. 
Canon Kabushiki Kaisha
Y H Y H H H Y H Y H H
Y10S H01L Y02P H01L H01L H01L Y02E H01L Y02E H01L H01L
additional inventional additional inventional inventional inventional additional inventional additional inventional inventional
Masahiko Masafumi Mitsuyuki Ryo Keishi Tatsuyuki
Tonogaki Sano Niwa Hayashi Saito Aoike