Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
MOS-type solid-state imaging apparatus
 An MOS-type solid-state imaging apparatus includes unit cells arranged in a two-dimensional matrix, each unit cell being constituted by a photodiode, an amplification transistor having a gate to which an output from the photodiode is input, a vertical selection transistor connected in series with the amplification transistor, and a reset transistor connected between the drain and gate of the amplification transistor to discharge the signal from the photodiode, a plurality of vertical address lines connected to the gates of the vertical selection transistors and arranged in a row direction, a vertical address circuit for driving the vertical address lines, a plurality of vertical signal lines arranged in a column direction in which currents are read out from the amplification transistors, a plurality of load transistors each connected to one end of a corresponding one of the vertical signal lines, a plurality of horizontal selection transistors each connected to the other end of a corresponding one of the vertical signal lines, a horizontal address circuit for sequentially supplying selection pulse signals to the gates of the horizontal selection transistors, and a horizontal signal line for reading out signal currents from the vertical signal lines through the horizontal selection transistors. 
Kabushiki Kaisha Toshiba
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Shinji Hirofumi Nobuo Hiroki Yoshiyuki
Ohsawa Yamashita Nakamura Miura Matsunaga