McClure, Qualey & Rodack, LLP
Semiconductor device with low resistivity contact structure
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a conductive region made of silicon, germanium or a combination thereof. The semiconductor device structure also includes an insulating layer over the semiconductor substrate and a fill metal material layer in the insulating layer. In addition, the semiconductor device structure includes a nitrogen-containing metal silicide or germanide layer between the conductive region and the fill metal material layers.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
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Chih-Wei Huang-Yi Chun-Wen Ching-Hwanq Kan-Ju Kuan-Yu Min-Hsiu Yi-Hsiang
Chang Huang Nieh Su Lin Yeh Hung Chao