McKenna Long & Aldridge LLP
Composition for forming gate insulating layer of organic thin-film transistor and organic thin film transistor using the same
The present invention relates to a composition for forming a gate insulating layer of an organic thin film transistor comprising polyarylate, and an organic thin film transistor comprising a gate insulating layer, which is formed using the composition, in contact with an organic semiconductor channel.
LG Chem, Ltd.
C C H C Y
C08L C09K H01L C08G Y10T
inventional additional inventional inventional additional
Dong-Ryul Min-Jeong Hyeon Jae-Min Hee-Jung Young-Whan
Kim Lee Choi Lee Kim Park