Haynes and Boone, LLP
Method of fabrication of a FinFET element
The present disclosure provides a method of fabricating a FinFET element including providing a substrate including a first fin and a second fin. A first layer is formed on the first fin. The first layer comprises a dopant of a first type. A dopant of a second type is provided to the second fin. High temperature processing of the substrate is performed on the substrate including the formed first layer and the dopant of the second type.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Yu-Rang Chen-Hua Chu-Yun Ding-Yuan Chen-Nan Cheng-Hung
Hsu Yu Fu Chen Yeh Chang