Patterson + Sheridan, LLP
Method of forming a III-V and Zn based finFET structure using low temperature deposition techniques
Aspects of the present disclosure include a structure and method of making a semiconductor device. The method includes: providing a gate structure, wherein the gate structure comprises a gate dielectric in contact with a III-V fin structure, depositing a spacer material over the gate structure and the fin structure, recessing the spacer material to form at least one sidewall spacer in contact with the gate, recessing a portion of the fin structure to create a recessed III-V fin structure, wherein the recessing of a portion of the fin structure creates an opening between at least two portions of the deposited spacer material; and depositing a Zn based material over i) the spacer material, ii) the recessed at least one fin structure and iii) the gate structure.
International Business Machines Corporation
H H H H H H
H01L H01L H01L H01L H01L H01L
inventional inventional inventional additional inventional inventional
Yun Seog Brent A. Devendra Joel P.
Lee Wacaser Sadana De Souza