Method of forming oxide layer
A method of forming an oxide layer includes the following steps. A substrate is provided. A surface of the substrate is treated to form an oxygen ion-rich surface. A spin-on-dielectric layer is formed on the oxygen ion-rich surface of the substrate. The present invention also provides a method of forming an oxide layer including the following steps. A substrate is provided. A surface of the substrate is treated with a hydrogen peroxide (H2O2) solution or a surface of the substrate is treated with oxygen containing gas, to form an oxygen ion-rich surface. A spin-on-dielectric layer is formed on the oxygen ion-rich surface of the substrate.
Fujian Jinhua Integrated Circuit Co., Ltd. UNITED MICROELECTRONICS CORP.
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Shih-Fang Cheng-Hsu Yi-Wei Jui-Min Ching-Hsiang Wei-Hsin
Tzou Huang Chen Lee Chang Liu