Eschweiler & Potashnik, LLC
Electro-migration barrier for Cu interconnect
The present disclosure relates to an integrated circuit device and an associated method of formation. The integrated circuit device includes a substrate, and a conductive metal interconnect line arranged within a dielectric material disposed over the substrate. An interfacial layer is in contact with an upper surface of the conductive metal interconnect line. An upper dielectric layer is arranged over the interfacial layer. A middle dielectric layer is arranged between the upper dielectric layer and the interfacial layer.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Su-Jen Chih-Chiang Chia-Ho
Sung Chang Chen