TFT process with high transmittance
 A method for manufacturing TFT (Thin Film Transistor) panel with high transmittance includes an intermediate-layer process. After the intermediate-layer process has been executed, the TFT panel is etched to remove the silicon nitride layer without coverage of the source conductive pattern and the drain conductive pattern. The transmittance of the portion of the TFT without shield of the source conductive pattern and the drain conductive pattern is thus higher than that of the portion of the TFT with the shield of the source conductive pattern and the drain conductive pattern. The intermediate-layer process in the preferred embodiment of the present invention has three aspects. In the first aspect, the first step is to bake the TFT panel. The second step is to form the contact hole in the insulating layer of the TFT panel. The third step is to form the source conductive pattern and the drain conductive pattern. In the second aspect, the first step is to form the contact hole in the insulating layer of the TFT panel, then form the source conductive pattern and the drain conductive pattern are formed, followed by the baking of the TFT panel including the source conductive pattern and the drain conductive pattern. In the third aspect, the first step is to form the contact hole in the insulating layer of the TFT panel, then sputtering a metallic layer on the TFT panel followed by a baking step. 
Industrial Technology Research Institute
H H
H01L H01L
inventional inventional
Ting-Hui I-Min Shih-Chang
Huang Lu Chang