Lee & Morse, P.C.
Method for fabricating semiconductor device
A method for fabricating a semiconductor device, the method including forming a mold structure on a substrate such that the mold structure includes alternately and repeatedly stacked interlayer insulating films and sacrificial films; forming a channel hole passing through the mold structure; forming a vertical channel structure within the channel hole; exposing a surface of the interlayer insulating films by removing the sacrificial films; forming an aluminum oxide film along a surface of the interlayer insulating films; forming a continuous film on the aluminum oxide film; and nitriding the continuous film to form a TiN film.
SAMSUNG ELECTRONICS CO., LTD.
H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Jae Young Bi O Hyung Joon Joong Yun Ki Yong Jung Ho Sung Hae Yong Seok
Ahn Kim Kim Ra Oh Kim Lee Cho