Slater & Matsil, L.L.P.
CMOS devices with Schottky source and drain regions
A semiconductor structure includes a semiconductor substrate, and an NMOS device at a surface of the semiconductor substrate, wherein the NMOS device comprises a Schottky source/drain extension region. The semiconductor structure further includes a PMOS device at the surface of the semiconductor substrate, wherein the PMOS device comprises a source/drain extension region comprising only non-metal materials. Schottky source/drain extension regions may be formed for both PMOS and NMOS devices, wherein the Schottky barrier height of the PMOS device is reduced by forming the PMOS device over a semiconductor layer having a low valence band.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chung-Hu Chih-Hsin Wen-Chin Hung-Wei
Ke Ko Lee Chen