Eschweiler & Potashnik, LLC
Stacked grid design for improved optical performance and isolation
A back side illumination (BSI) image sensor with a dielectric grid opening having a planar lower surface is provided. A pixel sensor is arranged within a semiconductor substrate. A metallic grid is arranged over the pixel sensor and defines a sidewall of a metallic grid opening. A dielectric grid is arranged over the metallic grid and defines a sidewall of the dielectric grid opening. A capping layer is arranged over the metallic grid, and defines the planar lower surface of the dielectric grid opening.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chao-Hsiung Chun-Hao Yung-Lung Horng Huei Tzu-Hsuan Yun-Wei Tsung-Han Kuo-Cheng
Wang Chou Hsu Tseng Hsu Cheng Tsai Lee