Haverstock & Owens LLP
Light emitter device
A light emitting device (LED) structure formed on a Group IV-based semiconductor substrate is provided. The LED structure includes a Group IV-based substrate, an AlN nucleation layer formed on the Group IV-based substrate, a GaN epitaxial layer formed on the AlN nucleation layer, a distributed Bragg reflector (DBR) multi-layer structure formed on the epitaxial layer, and an LED active layer formed on the DBR multi-layer structure.
National Chiao Tung University
H H H
H01L H01L H01L
inventional additional additional
Chun-Yen Tsung Hsi
Chang Yang