Ingrassia Fisher & Lorenz, P.C.
Integrated circuits and methods for fabricating integrated circuits with active area protection
Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a semiconductor substrate includes a shallow trench isolation structure disposed therein. A gate electrode structure overlies semiconductor material of the semiconductor substrate. A first sidewall spacer is formed adjacent to the gate electrode structure, with a first surface of the shallow trench isolation structure exposed and spaced from the first sidewall spacer by a region of the semiconductor material. The first surface of the shallow trench isolation structure is masked with an isolation structure mask. The region of the semiconductor material is free from the isolation structure mask. A recess is etched in the region of the semiconductor material, with the isolation structure mask in place. A semiconductor material is epitaxially grown within the recess to form an epitaxially-grown semiconductor region adjacent to the gate electrode structure.
GLOBALFOUNDRIES, INC.
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Xiaodong Jin Ping Yanxiang Xusheng
Yang Liu Liu Wu