J.C. Patents
FinFET structure with cavities and semiconductor compound portions extending laterally over sidewall spacers
A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is formed on the sidewall of the fin. A portion of the fin is removed, such that the spacer and the surface of the remaining fm together define a cavity. A piece of a semiconductor compound is formed from the cavity, wherein the upper portion of the piece of the semiconductor compound laterally extends over the spacer.
United Microelectronics Corp.
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Yen-Liang Chien-Ting Cho-Han Chung-Fu Yu-Hsiang Ssu-I
Wu Lin Fan Chang Hung Fu