McClure, Qualey & Rodack, LLP
Method for forming image sensor device structure with doping layer in light-sensing region
A method for forming an image sensor device structure is provided. The method includes forming a light-sensing region in a substrate, and forming an interconnect structure below a first surface of the substrate. The method also includes forming a trench in the light-sensing region from a second surface of the substrate, and forming a doping layer in the trench. The method includes forming an oxide layer in the trench and on the doping layer to form a doping region, and the doping region is inserted into the light-sensing region.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
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Yu-Jen Jen-Cheng Chun-Yuan Dun-Nian Wei-Chuang Hsiao-Hui Shyh-Fann Yen-Ting
Wang Liu Chen Yaung Wu Tseng Ting Chiang