Method of fabricating a magnetic tunnel junction (MTJ) device with reduced switching current
Partial perpendicular magnetic anisotropy (PPMA) type magnetic random access memory cells are constructed using processes and structural configurations that induce a directed static strain/stress on an MTJ to increase the perpendicular magnetic anisotropy. Consequently, reduced switching current of the MTJ results. The directed static strain/stress on the MTJ is induced in a controlled direction and/or with a controlled magnitude during fabrication. The MTJ is permanently subject to a predetermined directed stress and permanently includes the directed static strain/strain that provides reduced switching current.
QUALCOMM Incorporated
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Wei-Chuan Seung Hyuk Xiaochun Xia
Chen Kang Zhu Li