Willian Brinks Olds Hofer Gilson & Lione
Method for manufacturing a semiconductor device using a heat treatment according to a temperature profile that prevents grain or particle precipitation during reflow
 Described is a method for manufacturing semiconductor devices which includes a heat treating process for heating and cooling semiconductor substrates mounted on a boat at a predetermined pitch according to a predetermined temperature profile, in order to flatten the surface of each semiconductor substrate by reflowing an insulating film containing impurities, for example, a BPSG film formed on the substrate. In the heat treating process, one of the control factors which affects the formation of grains or particles due to the impurities contained in the insulating film is set so as to prevent the impurities from generating grains or particles during the heat treatment. Also disclosed is a method of preventing the generation of grains or particles by widening the pitch of the mounted substrates. 
Matsushita Electric Industrial Co., Ltd.
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Y10S Y10S H01L H01L
additional additional inventional inventional
Hiroshi Shinichi Yasushi Takatoshi Ichiro Toyokazu Yuka Chiaki
Yamamoto Imai Naito Yasui Nakao Fujii Terai Kudo