Scully, Scott, Murphy & Presser, P.C.
Vertical finfet with strained channel
A vertical transistor including a strained vertical semiconductor material channel pillar and a method of forming the same are provided. A strained vertical semiconductor materials pillar is first formed and is used to provide the strained vertical semiconductor material channel pillar of the vertical transistor of the present application. The strained vertical semiconductor material pillar is always mechanically anchored during various vertical transistor processing steps so that in the final structure strain is preserved.
International Business Machines Corporation
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Kangguo Juntao Ramachandra
Cheng Li Divakaruni