Lee & Morse, P.C.
Multi-level nonvolatile memory device with fast execution of program speed and programming method of the same
A nonvolatile memory device having a plurality of multi-level memory cells, the plurality being at least two, may be programmed by writing a least significant bit for each multi-level memory cell of the plurality of memory cells and, after the least significant bit has been written for each multi-level memory cell of the plurality of memory cells, writing a next significant bit for each multi-level memory cell.
Samsung Electronics Co., Ltd.
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Hyun Ho Ho-Jung Chul Woo Sang-Beom
Choi Kim Park Kang