Slater Matsil, LLP
Contact structure for semiconductor device and method
A device includes a fin extending from a semiconductor substrate, a gate stack over and along a sidewall of the fin, an isolation region surrounding the gate stack, an epitaxial source/drain region in the fin and adjacent the gate stack, and a source/drain contact extending through the isolation region, including a first silicide region in the epitaxial source/drain region, the first silicide region including NiSi2, a second silicide region on the first silicide region, the second silicide region including TiSix, and a conductive material on the second silicide region.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Ming-Hsing Chih-Wei Hung-Hsu Wei-Yip Yan-Ming Sheng-Hsuan
Tsai Chang Chen Loh Tsai Lin