Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Insulating film and electronic device
An electronic device including a semiconductor layer having silicon as a major component; and a dielectric film epitaxially grown directly on a major surface of the semiconductor layer, wherein the dielectric film consists of a dielectric material having a Ruddlesden-Popper type structure, the Ruddlesden-Popper type structure is expressed by a chemical formula An+1BnO3n+1, the element A including at least one selected from a group consisting of Ba, Sr, Ca and Mg, a percentage of Mg content in the element A is not larger than 10%, and the element B includes at least one selected from a group consisting of Ti, Zr and Hf.
Kabushiki Kaisha Toshiba
H H H H H B H H H H H H H H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L B82Y H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
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Tatsuo Hideki
Shimizu Satake