Blakely, Sokoloff, Taylor & Zafman LLP
III-N devices in Si trenches
A trench comprising a portion of a substrate is formed. A nucleation layer is deposited on the portion of the substrate within the trench. A III-N material layer is deposited on the nucleation layer. The III-N material layer is laterally grown over the trench. A device layer is deposited on the laterally grown III-N material layer. A low defect density region is obtained on the laterally grown material and is used for electronic device fabrication of III-N materials on Si substrates.
Intel Corporation
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Sherry R. Benjamin Robert S. Ravi Han Wui Seung Hoon Marko Sansaptak Sanaz K.
Taft Chu-Kung Chau Pillarisetty Then Sung Radosavljevic Dasgupta Gardner