McGinn IP Law Group PLLC
β-Ga2O3-based single crystal substrate
A β-Ga2O3-based single crystal substrate includes an average dislocation density of less than 7.31×104 cm−2. The average dislocation density may be not more than 6.14×104 cm−2. The substrate may further include a main surface including a plane orientation of (−201), (101) or (001). The substrate may be free from any twinned crystal.
TAMURA CORPORATION KOHA CO., LTD.
C H C C H H H H H H H
C30B H01L C30B C01G H01L H01L H01L H01L H01L H01L H01L
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Kimiyoshi Shinya Yu Makoto Takekazu Masaru
Koshi Watanabe Yamaoka Watanabe Masui Takizawa