Sawyer Law Group LLP
Exposure of desired node in a multi-layer integrated circuit using FIB and RIE
 Aspects for exposing local areas for desired nodes in a multi-layer integrated circuit are described. In an exemplary method aspect, the method includes exposing at least one desired local area using focused ion beam etching, and performing reactive ion etching to complete delayering of the at least one desired local area to gain access to at least one lower level node of the integrated circuit. The exposing step further includes using a high current ion beam in the focused ion beam etching. 
Advanced Micro Devices, Inc.
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