Anova Law Group, PLLC
Silicon-controlled-rectifier electrostatic protection structure and fabrication method thereof
A silicon-controlled-rectifier electrostatic protection structure and a fabrication method are provided. The structure includes: a substrate of P-type; a first N-type well, a second N-type well, and a third N-type well in the substrate; a first P-type doped region in the first N-type well; first N-type doped regions at sides of the first N-type well along a first direction; first gate structures on a portion of the first N-type doped regions and on a portion of the first P-type doped region; second gate structure groups at sides of the first N-type well along a second direction; second N-type doped regions in the substrate at sides of each second gate structure along the first direction; second P-type doped regions in the second N-type doped regions between adjacent second gate structure groups; and a third P-type doped region and a cathode N-type doped region in the substrate.
Semiconductor Manufacturing International (Beijing) Corporation Semiconductor Manufacturing International (Shanghai) Corporation
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inventional inventional inventional inventional
Guang Jie
Chen Chen