IP & T Group LLP
Semiconductor device with metal gates and method for fabricating the same
A semiconductor device includes a gate insulation layer formed over a substrate and having a high dielectric constant, a gate electrode formed over the gate insulation layer and a work function control layer formed between the substrate and the gate insulation layer and inducing a work function shift of the gate electrode.
Hynix Semiconductor Inc.
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Seung-Mi Woo-Young Yun-Hyuck Tae-Yoon
Lee Park Ji Kim