Knobbe, Martens, Olson & Bear LLP
Atomic layer deposition methods for forming a multi-layer adhesion-barrier layer for integrated circuits
A process produces a layer of material which functions as a copper barrier layer, adhesion layer and a copper seed layer in a device of an integrated circuit, particularly in damascene or dual damascene structures. The method includes a step of depositing a diffusion barrier layer over a dielectric, a step of depositing a layer of graded metal alloy of two or more metals, and a step of depositing a copper seed layer, which step is essentially a part of the step of depositing the alloy layer.
ASM International N.V.
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Wei-Min
Li