Trench capacitor and method for producing the same
A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high-permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a high capacitance while being efficient in utilization of semiconductor real estate.
NXP B.V.
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Freddy Vahid Jin Aarnoud Laurens
Roozeboom Shabro Liu Roest