Novick, Kim & Lee, PLLC
Method for reading a cross-point type memory array comprising a two-terminal switching material
Provided is a method for reading a current for processing analog information in a memory array for a synaptic device. To this end, the method for reading the memory array including a two-terminal switching material, comprises (a) selecting at least one cell by applying a voltage to the memory array, and (b) simultaneously measuring the sum of currents from the at least one cell selected. The voltage applied to the at least one cell selected in operation (a) is higher than a voltage applied to at least one cell not selected while being within a range in which all of the selected at least one cell is not turned on.
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Junsung
Kim