Fitzpatrick, Cella, Harper & Scinto
Field effect transistor manufacturing method
Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.
Canon Kabushiki Kaisha Tokyo Institute of Technology
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H01L H01L H01L
inventional inventional inventional
Masafumi Kenji Hideo Hisato Toshio Tatsuya
Sano Nomura Hosono Yabuta Kamiya Iwasaki