Wood, Herron & Evans, LLP
Semiconductor-on-insulator device structures with a body-to-substrate connection for enhanced electrostatic discharge protection, and design structures for such semiconductor-on-insulator device structures
Semiconductor-on-insulator device structures with enhanced electrostatic discharge protection, and design structures for an integrated circuit with device structures exhibiting enhanced electrostatic discharge protection. A device is formed in a body region of a device layer of a semiconductor-on-insulator substrate, which is bounded by an inner peripheral sidewall of an annular dielectric-filled isolation structure that extends from a top surface of the device layer to the insulating layer of the semiconductor-on-insulator substrate. An annular conductive interconnect extends through the body region and the insulating layer to connect the body region with the bulk wafer of the semiconductor-on-insulator substrate. The annular conductive interconnect is disposed inside the inner peripheral sidewall of the isolation structure, which annularly encircles the body region.
International Business Machines Corporation
H H
H01L H01L
inventional inventional
Souvick Robert J. Michel J. Christopher S. Tom C. Junjun
Mitra Gauthier, Jr. Abou-Khalil Putnam Lee Li