Schmeiser, Olsen & Watts LLP
Method of manufacturing the double-implant nor flash memory structure
In a method of manufacturing a double-implant NOR flash memory structure, a phosphorus ion implantation process is performed, so that a P-doped drain region is formed in a semiconductor substrate between two gate structures to overlap with a highly-doped drain (HDD) region and a lightly-doped drain (LDD) region. Therefore, the electric connection at a junction between the HDD region and the LDD region is enhanced and the carrier mobility in the memory is not lowered while the problems of short channel effect and punch-through of LDD region are solved.
EON Silicon Solutions Inc.
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inventional inventional inventional inventional
Yider Yi-Hsiu Yung-Chung
Wu Chen Lee