Jianq Chyun IP Office
Method for fabricating pixel structure
A pixel structure fabricating method is provided. A gate is formed on a substrate. A gate insulation layer covering the gate is formed on the substrate. A channel layer, a source, and a drain are simultaneously formed on the gate insulation layer above the gate. The gate, channel layer, source, and drain form a thin film transistor (TFT). A passivation layer is formed on the TFT and the gate insulation layer. A black matrix is formed on the passivation layer. The black matrix has a contact opening above the drain and a color filter containing opening. A color filer layer is formed within the color filter containing opening through inkjet printing. A dielectric layer is formed on the black matrix and the color filter layer. The dielectric layer and the passivation layer are patterned to expose the drain. A pixel electrode electrically connected to the drain is formed.
Au Optronics Corporation
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Jun-Kai Chun-Yi Ta-Wen Che-Yung Chen-Pang Chou-Huan Han-Tang Zong-Long Chia-Ming Hsiang-Chih
Chang Chiang Liao Lai Tung Yu Chou Jhang Chang Hsiao