Harness, Dickey & Pierce, P.L.C.
Method of forming pattern structure and method of fabricating semiconductor device using the same
A method of forming a pattern structure and a method of fabricating a semiconductor device using the pattern structure, are provided the method of forming the pattern structure includes forming a mask on an underlying layer formed on a lower layer. The underlying layer is etched using the mask as an etching mask, thereby forming patterns on the lower layer. The patterns define at least one opening. A sacrificial layer is formed in the opening and the mask is removed. The sacrificial layer in the opening is partially etched when the mask is removed.
Samsung Electronics Co., Ltd.
H H
H01L H01L
inventional inventional
Jaehee Jung-In Kiseok
Oh Kim Suh