Ryan, Mason & Lewis, LLP
Strained vertical field-effect transistor (FET) and method of forming the same
A method for manufacturing a semiconductor device includes forming a first semiconductor layer on a substrate, forming a bottom source/drain region on the first semiconductor layer, forming a second semiconductor layer on the bottom source/drain region, patterning the second semiconductor layer into a plurality of fins extending from the bottom source/drain region vertically with respect to the substrate, forming a gate structure around the plurality of fins, forming a top source/drain region on each of the plurality of fins, oxidizing the first semiconductor layer to form an oxide layer in place of the first semiconductor layer, wherein a volume of the oxide layer is larger than a volume of the first semiconductor layer prior to the oxidation, and producing a strain in each of the plurality of fins due to the larger volume of the oxide layer.
International Business Machines Corporation
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Peng Juntao Kangguo
Xu Li Cheng