Blakely Sokoloff Taylor & Zafman LLP
Device and method for etching flash memory gate stacks comprising high-k dielectric
In one implementation, a method is provided capable of etching a wafer to form devices including a high-k dielectric layer. The method includes etching an upper conductive material layer in a first plasma chamber with a low cathode temperature, transferring the wafer to a second chamber without breaking vacuum, etching a high-k dielectric layer in the second chamber, and transferring the wafer from the second chamber to the first plasma chamber without breaking vacuum. A lower conductive material layer is etched with a low cathode temperature in the first chamber. In one implementation, the high-k dielectric etch is a plasma etch using a high temperature cathode. In another implementation, the high-k dielectric etch is a reactive ion etch.
Applied Materials, Inc.
H H
H01L H01L
inventional inventional
Wei Shashank Meihua Yan Xikun
Liu Deshmukh Shen Du Wang