Low capacitance photodiode element and computed tomography detector
A photodiode element includes a first layer of a first diffusion type and a second layer. The second layer defines a charge-collecting area. The charge-collecting area includes an active region of a second diffusion type and an inactive region. The active region surrounds the inactive region. The photodiode element also includes an intrinsic semiconductor layer between the first layer and the second layer.
General Electric Company
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Jeffrey Alan Wen Abdelaziz
Kautzer Li Ikhlef