Implant screen and method
 A semiconductor device (60) may comprise a semiconductor layer (12) having an outer surface (20). A plurality of gates (18) may be disposed over the outer surface (20) of the semiconductor layer (12). An isolation cover (30) may be disposed over the gates (18). An implant screen (40) may be grown on the outer surface (20) of the semiconductor layer (12) between the isolation covers (30) of the gates (18). 
Texas Instruments Incorporated
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Siang Ping Jiann Dirk Noel William F.
Kwok Liu Anderson Richardson