Cantor Colburn LLP
FinFET with reduced source and drain resistance
A method for forming a semiconductor device comprises patterning and etching a fin in a semiconductor substrate, forming a gate stack over the fin, epitaxially growing a first semiconductor material on exposed portions of the fin, epitaxially growing a second semiconductor material on exposed portions of the first semiconductor material, and performing an etching process that removes exposed portions of the first semiconductor material and exposed portions of the second semiconductor material, the etching process is operative to remove portions of the first semiconductor material at a faster rate than the second semiconductor material such that a first cavity is formed adjacent to the fin.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Kangguo Junli Xin Juntao
Cheng Wang Miao Li