Cantor Colburn LLP
Transistor having an oxide-isolated strained channel fin on a bulk substrate
Embodiments of the invention are directed to a semiconductor device that includes a substrate formed from a first type of semiconductor material, along with a fin formed on the substrate. The fin includes a fin channel region configured to include a bottom region, a central region, and a top active region. The central region includes a dielectric material and couples the bottom region to the top active region. The top active region includes a second type of semiconductor material, and the bottom region includes a third type of semiconductor material.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Choonghyun Peng Kangguo Juntao
Lee Xu Cheng Li