Slater & Matsil, L.L.P.
Pad structure including glue layer and non-low-k dielectric layer in BSI image sensor chips
An integrated circuit structure includes a semiconductor substrate, and a dielectric pad extending from a bottom surface of the semiconductor substrate up into the semiconductor substrate. A low-k dielectric layer is disposed underlying the semiconductor substrate. A first non-low-k dielectric layer is underlying the low-k dielectric layer. A metal pad is underlying the first non-low-k dielectric layer. A second non-low-k dielectric layer is underlying the metal pad. An opening extends from a top surface of the semiconductor substrate down to penetrate through the semiconductor substrate, the dielectric pad, and the low-k dielectric layer, wherein the opening lands on a top surface of the metal pad. A passivation layer includes a portion on a sidewall of the opening, wherein a portion of the passivation layer at a bottom of the opening is removed.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Wen-De Jeng-Shyan Shuang-Ji Jen-Cheng Yueh-Chiou Dun-Nian
Wang Lin Tsai Liu Lin Yaung