Lerner, David, Littenberg, Krumholz & Mentlik, LLP
Oxide semiconductor sputtering target, method of manufacturing thin-film transistors using the same, and thin film transistor manufactured using the same
An oxide semiconductor sputtering target which is used for depositing a thin film having high electron mobility and high operational reliability, a method of manufacturing thin-film transistors (TFTs) using the same, and a TFT manufactured using the same. The oxide semiconductor sputtering target is used in a sputtering process for depositing an active layer on a TFT. The oxide semiconductor sputtering target is made of a material based on a composition including indium (In), tin (Sn), gallium (Ga) and oxygen (O). The method includes the step of depositing an active layer using the above-described oxide semiconductor sputtering target. The thin-film transistor may be used in a display device, such as a liquid crystal display (LCD) or an organic light-emitting display (OLED).
Samsung Corning Advanced Glass, LLC
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Johann Jinjoo Hyungrok Seungju Ju Ok Jin Woo In Sung Joo Hye
Cho Ha Lee Lee Park Han Sohn Oh