Tung & Associates
Semiconductor device having weak current channel
The invention provides a semiconductor device having a weak current channel. The semiconductor device includes a gate, a source and a drain. There are a plurality of insulation layers and a plurality of first conductive type lightly doped regions alternatingly arranged between the gate and the drain; each of the first conductive type lightly doped regions providing a weak current channel between the source and the drain. When the gate is in a relatively low voltage range, the weak current channel is conducted; when the gate is in a relatively high voltage range, the weak current channel is not conducted.
RICHTEK TECHNOLOGY CORPORATION
H H H H H H
H01L H01L H01L H01L H01L H01L
additional inventional inventional inventional inventional inventional
Chien-Wei Tsung-Yi Chien-Kai Huang-Ping
Chiu Huang Chang Chu