2SPL Patent Attorneys PartG mbB
Semiconductor devices, radio frequency devices and methods for forming semiconductor devices
A semiconductor device is proposed. The semiconductor device includes a group III-N semiconductor layer, an electrically insulating material layer located on the group III-N semiconductor layer, and a metal contact structure located on the electrically insulating material layer. An electrical resistance between the metal contact structure and the group III-N semiconductor layer through the electrically insulating material layer is smaller than 1*10−7Ω for an area of 1 mm2. Further, semiconductor devices including a low resistance contact structure, radio frequency devices, and methods for forming semiconductor devices are proposed.
Intel Corporation
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Walid M. Marko Han Wui Sansaptak Paul B.
Hafez Radosavljevic Then Dasgupta Fischer