Semiconductor light emitting structure and semiconductor package structure
A semiconductor light emitting structure includes an epitaxial structure, an N-type electrode pad, a P-type electrode pad and an insulation layer. The N-type electrode pad and the P-type electrode pad are disposed on the epitaxial structure apart, wherein the P-type electrode pad has a first upper surface. The insulation layer is disposed on the epitaxial structure and located between the N-type electrode pad and the P-type electrode pad, wherein the insulation layer has a second upper surface. The first upper surface of the P-type electrode pad and the second upper surface of the insulation layer are coplanar.
Genesis Photonics Inc.
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additional inventional additional
Yi-Ru Yu-Yun Chih-Ling Shao-Ying Jing-En
Huang Lo Wu Ting Huang