Schwabe, Williamson & Wyatt, P.C.
Integrated circuit die having back-end-of-line transistors
Integrated circuit dies having multi-gate, non-planar transistors built into a back-end-of-line portion of the die are described. In an example, non-planar transistors include an amorphous oxide semiconductor (AOS) channel extending between a source module and a drain module. A gate module may extend around the AOS channel to control electrical current flow between the source module and the drain module. The AOS channel may include an AOS layer having indium gallium zinc oxide.
Intel Corporation
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Gilbert William Jack T. Van Hoang Rafael Marko
Dewey Kavalieros Le Rios Radosavljevic