Structure and fabrication process for an improved high temperature sensor
The present invention discloses a temperature sensor. The temperature sensor includes an aluminum oxide substrate and a thin-film resistor having a specific temperature coefficient of resistance (TCR) disposed over the substrate. The temperature sensor further includes an aluminum oxide stress-relief layer covering the thin film resistor. The temperature sensor further includes a passivation layer covering the aluminum oxide stress-relief layer. The aluminum oxide stress-relief layer further has at least one resistor-trimming trench formed by removing a portion of the aluminum oxide stress-relief layer and thin-film resistor therefrom and the resistor-trimming trench is filled with a material of the passivation layer. In a preferred embodiment, the temperature sensor further includes a set of dummy pads for resistance-trimming measurement disconnected from the thin film resistor disposed on the substrate near the thin film resistor covered by the passivation layer. In another preferred embodiment, the temperature sensor further includes a set of sensor bonding pads disposed on the substrate electrically connected to the thin film resistor covered by the passivation layer. And, the temperature sensor further includes a set of platinum chip-leads bonded to the sensor bonding pads for temperature measurement connections.
Cyntec Company
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inventional inventional inventional inventional
Yue-Lang Chung Hsiung Al
Chen Wang Salman