Sughrue Mion, PLLC
Nano-structure semiconductor light emitting device
A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.
SAMSUNG ELECTRONICS CO., LTD.
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Han Kyu Dae Myung Denis Yeon Woo Young Jin Jung-Sub Jae Hyeok
Seong Chun Sannikov Seo Choi Kim Heo