Ratner & Prestia
Semiconductor device and method of fabricating the same
 A semiconductor device has a multilayered metalization including a CVD tungsten film, a thin buffer layer deposited on the CVD tungsten film by sputtering, and an Al-alloy layer formed on the buffer layer. Due to the existence of the thin buffer layer, the crystal grains of the Al-alloy layer do not become small and the electromigration resistance as wiring is enhanced. 
Matsushita Electric Industrial Co., Ltd.
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