Maschoff Brennan
Semiconductor device and method of manufacturing the same
A semiconductor device and method of forming the same are provided. The semiconductor device includes a gate structure formed over a substrate. A spacer layer is formed on side portions of the gate structure. A first dielectric layer is formed over the gate structure. A conductive cap layer passes through the first dielectric layer and is formed over the gate structure. A top surface of the conductive cap layer is above a top surface of the spacer layer. The semiconductor device further includes a conductive layer formed over the conductive cap layer. The conductive layer is electrically coupled with the conductive cap layer.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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inventional inventional inventional inventional inventional additional inventional inventional inventional inventional additional additional inventional inventional inventional inventional inventional inventional
Chia-Hao Yu-Ming Chih-Hao Jia-Chuan
Chang Lin Wang You