Cantor Colburn LLP
Vertical field effect transistor including integrated antifuse
A vertical field effect transistor (FET) includes a vertical semiconductor channel having a first end that contacts an upper surface of a substrate and an opposing second end that contacts a source/drain region. An electrically conductive gate encapsulates the vertical semiconductor channel. The vertical FET further includes a split-channel antifuse device between the source/drain region and the electrically conductive gate. The split-channel antifuse device includes a gate dielectric having a thickness that varies between the source/drain region and the electrically conductive gate.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Kangguo Juntao Qintao Geng
Cheng Li Zhang Wang