Fish & Richardson P.C.
Semiconductor device and method of manufacturing the same
A semiconductor device having favorable electric characteristics is provided. The semiconductor device includes a first transistor and second transistor. The first transistor includes a first conductor over a substrate; a first insulator thereover; a first oxide thereover; a second insulator over thereover; a second conductor including a side surface substantially aligned with a side surface of the second insulator and being over the second insulator; a third insulator including a side surface substantially aligned with a side surface of the second conductor and being over the second conductor; a fourth insulator in contact with a side surface of the second insulator, a side surface of the second conductor, and a side surface of the third insulator; and a fifth insulator in contact with the first oxide and the fourth insulator. The second transistor includes a third conductor; a fourth conductor at least part of which overlaps with the third conductor; and a second oxide between the third conductor and the fourth conductor. The third conductor and the fourth conductor are electrically connected to the first conductor.
Semiconductor Energy Laboratory Co., Ltd.
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Yuta Shunpei Kiyoshi Ryo
Endo Yamazaki Kato Tokumaru