Rosenberg, Klein & Lee
Semiconductor structure and fault location detecting system
A semiconductor structure includes a grounding unit, a P-type substrate, a P-type well area, an NMOS structure, a P-type well contact area, a shallow trench isolation structure, and a charge guiding groove. The P-type substrate is formed above the grounding unit. The P-type well area is formed on the P-type substrate. The NMOS structure is formed on the P-type well area, and the NMOS structure includes at least one exposed N-type source area, at least one exposed N-type drain area, and at least one exposed N-type gate area. The P-type well contact area is formed on the P-type well area. The shallow trench isolation structure is disposed between the NMOS structure and the P-type well contact area. The charge guiding groove passes through the P-type well contact area and one part of the P-type well area and is electrically connected with the grounding unit.
Inotera Memories, Inc.
H G
H01L G01R
inventional inventional
Wei Chih
Wang