WPAT, P.C., Intellectual Property Attorneys
Method for manufacturing semiconductor device structure
A method of manufacturing a semiconductor device includes receiving a FinFET precursor including a fin structure formed between some isolation regions, and a gate structure formed over a portion of the fin structure; removing a top portion of the fin structure on either side of the gate structure; growing a semiconductive layer on top of a remaining portion of the fin structure such that a plurality of corners is formed over the fin structure; forming a capping layer over the semiconductive layer; performing an annealing process on the FinFET precursor to form a plurality of dislocations proximate to the corners; and removing the capping layer.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Chih-Ming I-Chih Fu-Tsun Chih-Mu Yung-Fa
Hsieh Chen Tsai Huang Lee