Ostrolenk, Faber, Gerb & Soffen, LLP
Ferroelectric thin film device and method of producing the same
 A ferroelectric thin film device comprises: a Si substrate; a TiN thin film epitaxially grown on the Si substrate in which Ti is partially substituted by Al; a metal thin film epitaxially grown on the TiN thin film; and a ferroelectric thin film grown and oriented on the metal thin film and composed of an oxide having a perovskite structure. The amount of Al substituted at Ti sites in the TiN thin film is about 1 to 30% in terms of Al atoms, and the oxygen content of the TiN thin film is about 5% or less in terms of oxygen atoms. 
Murata Manufacturing Co., Ltd.
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additional additional inventional
Xiao-min Atsushi Kosuke
Li Sakurai Shiratsuyu