Fitzpatrick, Cella, Harper & Scinto
Method of producing a photovoltaic device
 A method for producing a photo voltaic device, wherein the device comprises a base member including a substrate. A reflecting layer and a reflection enhancing layer are formed on the base member. A p-i-n structure formed of n-type, i-type and p-type semiconductor layers containing silicon atoms having a non-single crystal structure, is also formed on the base member at least once. The method comprises the steps of (a) depositing a material constituting the reflecting layer, at a substrate temperature of from 200.degree. to 500.degree. C. to form the reflecting layer; (b) thereafter lowering the substrate temperature to 100.degree. C. or below; and (c) thereafter depositing a material constituting the reflection enhancing layer on the reflecting layer at a substrate temperature of from 200.degree. to 400.degree. C., to form the reflection enhancing layer. 
Canon Kabushiki Kaisha
Y Y H H H Y H
Y02E Y02P H01L H01L H01L Y02E H01L
additional additional inventional inventional inventional additional inventional
Keishi Masafumi
Saito Sano