Fliesler Dubb Meyer & Lovejoy LLP
Avalanche injection EEPROM memory cell with P-type control gate
 A non-volatile memory cell, comprising a semiconductor substrate having a first conductivity type. A control region is formed of said first conductivity type in the substrate and a control region oxide formed over the control region. The cell includes a program element having a first active region of a second conductivity type formed in said substrate, a doped or implanted region adjacent to said first active region, and a gate oxide overlying at least the channel region. An active region oxide covers a portion of the first active region. A floating gate is formed over said semiconductor substrate on said active region oxide and said control region oxide. 
Vantis Corporation
H H
H01L H01L
inventional inventional
Sunil D. Xiao-Yu Steven J.
Mehta Li Fong