Tung & Associates
Metal interconnect features with a doping gradient
A metal filled damascene structure with improved electromigration resistance and method for forming the same, the method including providing a semiconductor process wafer comprising damascene openings; and, depositing metal and at least one metal dopant according to an ECD process to from a metal filled damascene comprising a doped metal alloy portion.
Taiwan Semiconductor Manufacturing Co., Ltd.
C H H C
C25D H01L H01L C25D
inventional inventional inventional inventional
Winston Chung Liang Ming Hsing
Sue Chang Tsai