Slater & Matsil, L.L.P.
Elongated bump structure for semiconductor devices
An elongated bump structure for semiconductor devices is provided. An uppermost protective layer has an opening formed therethrough. A pillar is formed within the opening and extending over at least a portion of the uppermost protective layer. The portion extending over the uppermost protective layer exhibits a generally elongated shape. In an embodiment, the position of the opening relative to the portion of the bump structure extending over the uppermost protective layer is such that a ratio of a distance from an edge of the opening to an edge of the bump is greater than or equal to about 0.2. In another embodiment, the position of the opening is offset relative to center of the bump.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chen-Hua Yu-Feng Chen-Shien Sheng-Yu Chita Tin-Hao
Yu Chen Chen Wu Chuang Kuo