Miles & Stockbridge P.C.
Method of manufacturing semiconductor device that includes forming metal oxide film on semiconductor wafer
A semiconductor wafer is placed in a chamber of a film-deposition apparatus, and gas in the chamber is exhausted from a gas exhaust outlet. Then, with interrupting the exhaust, an inert gas is introduced into the chamber so that the chamber has a pressure of 133 Pa or higher and lower than 101325 Pa, and then a mixed gas of an inert gas and a source gas for depositing a metal oxide film is introduced into the chamber. Then, after exhausting the gas in the chamber, an oxidation gas is introduced into the chamber to react with the molecules of the source gas absorbed on the semiconductor wafer to form a metal oxide film on the semiconductor wafer. By repeating these steps, a metal oxide film having a desired film thickness is deposited on the semiconductor wafer with a film-thickness distribution by an ALD method.
Seiko Epson Corporation Renesas Technology Corp.
H H C H H H H H H H H C H H
H01L H01L C23C H01L H01L H01L H01L H01L H01L H01L H01L C23C H01L H01L
inventional inventional inventional additional additional inventional inventional inventional additional inventional inventional inventional inventional inventional
Yukimune Hiromi Shinji Yuuichi
Watanabe Ito Migita Kamimuta