Morrison & Foerster LLP
Semiconductor device and manufacturing method thereof
This invention is directed to offer a package type semiconductor device that can realize a smaller size device and its manufacturing method as well as a small stacked layer type semiconductor device and its manufacturing method. A device component 1 and a pad electrode 4 electrically connected with the device component 1 are formed on a semiconductor substrate 2. A supporting member 7 is bonded to a surface of the semiconductor substrate 2 through an adhesive layer 6. There is formed a through-hole 15 in the supporting member 7 penetrating from its top surface to a back surface. Electrical connection with another device is made possible through the through-hole 15. A depressed portion 12 is formed in a partial region of the top surface of the supporting member 7. Therefore, all or a portion of another device or a component can be disposed utilizing a space in the depressed portion 12. When a stacked layer type semiconductor device is formed, stacking is made by fitting a portion of a semiconductor device 50 in an upper layer to an inside of the depressed portion 12. 
SANYO Semiconductor Co., Ltd. Semiconductor Components Industries, LLC
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Hiroshi Katsuhiko Noboru Yuichi Shinzo Takashi Kazuo Hiroyuki
Yamada Kitagawa Okubo Morita Ishibe Noma Okada Shinogi