Non-volatile memory device used for non-overlapping implant
A method of fabricates a non-volatile ROM device on a semiconductor substrate with a plurality of parallel buried bit lines, a gate oxide layer above the substrate and word lines formed above the gate oxide layer comprises: forming a dielectric layer over the word lines and gate oxide layer, forming and pattern first photoresist layer over the dielectric layer, etching the dielectric layer, stripping the first photoresist layer, forming and pattern second photoresist layer over the dielectric layer to develop an opening area for ion implantation, ion implanting a code implant dopant through the opening area down into the substrate and stripping the second photoresist layer.
Macronix International Co., Ltd.
H H
H01L H01L
inventional inventional
Ching-Yu
Chang