Patterson & Sheridan, LLP
Semiconductor device that can maintain high voltage while lowering on-state resistance
A semiconductor device includes a semiconductor substrate and a plurality of gate electrodes including a part extended in a first direction in a plane parallel with the semiconductor substrate. The semiconductor substrate has a second semiconductor layer including a plurality of first conductive type pillars and second conductive type second pillars that are disposed on the first semiconductor layer, extending in the first direction in the plane parallel with the semiconductor substrate and in a third direction intersecting with a second direction orthogonal to the first direction, and arranged adjacent to each other in an alternate manner.
Kabushiki Kaisha Toshiba
H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional additional inventional inventional inventional inventional additional additional
Hiroaki Wataru Toshiyuki Syotaro Shunji
Yamashita Saito Naka Ono Taniuchi