Connolly Bove Lodge & Hutz LLP
Epitaxial material used for GaN based LED with low polarization effect and manufacturing method thereof
A method of manufacturing epitaxial material used for GaN based LED with low polarization effect, which includes steps of growing n-type InGaAlN layer composed of GaN buffer layer (2) and n-type GaN layer (3), low polarizing active layer composed of InGaAlN multi-quantum well structure polarized regulating and controlling layer (4) and InGaAlN multi-quantum well structure light emitting layer (5) and p-type InGaAlN layer (6) on sapphire or SiC substrate (1) in turn. The method adds InGaAlN multi-quantum well structure polarized regulating and controlling layer, thus reduces polarization effect of quantum well active region.
Institute of Physics, Chinese Academy of Sciences
H H H B Y
H01L H01L H01L B82Y Y10S
inventional additional inventional inventional additional
Hong Liwei Wenxin Junming Haiqiang
Chen Guo Wang Zhou Jia