Patterson & Sheridan, L.L.P
Complementary metal-oxide semiconductor (CMOS) integration with compound semiconductor devices
Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a substrate, a well region disposed adjacent to the substrate, a first fin disposed above the well region, a second fin disposed above the substrate, and a gate region disposed adjacent to each of the first fin and the second fin. The semiconductor device may also include at least one third fin disposed above the substrate, a support layer disposed above the at least one third fin, and a compound semiconductor device disposed above the support layer.
QUALCOMM Incorporated
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Bin Gengming Xia
Yang Tao Li