McDermott Will & Emery LLP
Nitride semiconductor light emitting device and manufacturing method of the same
There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.
Samsung LED Co., Ltd.
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additional inventional additional additional
Jin Hyun Cheol Soo Ki Man Joon Seop Hyun Soo Yu Seung
Lee Sone Kang Kwak Kim Kim