The Marbury Law Group PLLC
Three dimensional NAND devices with air gap or low-k core
A monolithic three dimensional NAND string device includes a semiconductor channel, at least one end portion of the semiconductor channel extending substantially perpendicular to a major surface of a substrate, a plurality of control gate electrodes extending substantially parallel to the major surface of the substrate in different device levels, a blocking dielectric located in contact with the plurality of control gate electrodes, at least one charge storage region located in contact with the blocking dielectric, and a tunnel dielectric located between the at least one charge storage region and the semiconductor channel. The semiconductor channel is a hollow body surrounding a middle region and at least one of an air gap or a low-k insulating material having a dielectric constant of less than 3.9 is located in the middle region.
SANDISK TECHNOLOGIES INC.
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Jayavel Wei Yanli Peter
Pachamuthu Zhao Zhang Rabkin