Marshall, Gerstein & Borun LLP
Method of manufacturing dual gate oxide film
The present invention is provided to manufacture a dual gate oxide film. According to the present invention, it is possible to obtain a high-quality NO gate oxide film for high voltage and a high-quality NO gate oxide film for low voltage where nitrogen is distributed uniformly in the entire oxide films by carrying out a rapid annealing process in an inert atmosphere after carrying out an NO annealing process in order to prevent a phenomenon that nitrogen is not distributed uniformly and segregated in a gate oxide film for high voltage due to application of the NO annealing process after forming a gate oxide film for low voltage.
Hynix Semiconductor Inc.
H
H01L
inventional
Seung Cheol Jung Il Sang Wook
Lee Cho Park