Baker & McKenzie LLP
Structure and method for a magnetic memory device with proximity writing
An MRAM device comprises a plurality of MRAM structures, each MRAM structure comprising a magnetoresistive memory cell in close proximity to a high permeability conductive line and a single transistor configured to access the magnetoresistive memory cell for both read and write operations. The high permeability conductive line acts a current path for both read and write operations, thereby reducing the number of metal bit lines.
Macronix International Co. Ltd.
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H01L
inventional
ChiaHua Kuang Yeu
Ho Hsieh