Wang Law Firm, Inc.
Control method for memory cell
A control method for at least one memory cell is disclosed. The memory cell includes a transistor and a resistor. The resistor is connected to the transistor between a first node and a second node. In a programming mode, the memory cell is programmed. The step of programming the memory cell includes providing a first controlling voltage to a gate of the transistor, providing a first setting voltage to the first node, and providing a second setting voltage to the second node. When it is determined that the memory cell has been successfully programmed, a specific action is executed.
Industrial Technology Research Institute
G G G G G
G11C G11C G11C G11C G11C
additional additional inventional additional inventional
Pang-Shiu Heng-Yuan Ching-Chih Yen-Ya Yu-Sheng
Chen Lee Hsu Hsu Chen