Muir Patent Law, PLLC
Semiconductor device having buried gate structure and method of fabricating the same
A semiconductor device may include a device isolation region configured to define an active region in a substrate, an active gate structure disposed in the active region, and a field gate structure disposed in the device isolation region. The field gate structure may include a gate conductive layer. The active gate structure may include an upper active gate structure including a gate conductive layer and a lower active gate structure formed under the upper active gate structure and vertically spaced apart from the upper active gate structure. The lower active gate structure may include a gate conductive layer. A top surface of the gate conductive layer of the field gate structure is located at a lower level than a bottom surface of the gate conductive layer of the upper active gate structure.
SAMSUNG ELECTRONICS CO., LTD.
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Junsoo Dongsoo Jiyoung Moonyoung Satoru Dongjin
Kim Woo Kim Jeong Yamada Lee