Hoffman Warnick LLC
Via formation using sidewall image transfer process to define lateral dimension
A method of forming a via to an underlying layer of a semiconductor device is provided. The method may include forming a pillar over the underlying layer using a sidewall image transfer process. A dielectric layer is formed over the pillar and the underlying layer; and a via mask patterned over the dielectric layer, the via mask having a mask opening at least partially overlapping the pillar. A via opening is etched in the dielectric layer using the via mask, the mask opening defining a first lateral dimension of the via opening in a first direction and the pillar defining a second lateral dimension of the via opening in a second direction different than the first direction. The via opening is filled with a conductor to form the via. A semiconductor device and via structure are also provided.
GLOBALFOUNDRIES, INC. STMicroelectronics, Inc. International Business Machines Corporation
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Terry A. Hosadurga K. Cheng Yongan Shyng-Tsong Wenhui Chi-Chun Sylvie M. Yann A.
Spooner Shobha Chi Xu Chen Wang Liu Mignot Mignot