Perkins Coie LLP
Low capacitance interconnect structures and associated systems and methods
Semiconductor device interconnect structures having low capacitance and associated systems and methods are disclosed herein. In one embodiment, a method of manufacturing an interconnect structure includes forming an opening in a surface of a semiconductor device and forming an interconnect structure at least within the opening. Forming the interconnect structure includes depositing a first insulator material on both the surface and a sidewall of the opening, selectively removing a first portion of the first insulator material on the surface over a second portion of the first insulator material on the sidewall, depositing a second insulator material on the second portion, and depositing a conductive material on the second insulator material. The method further includes selecting the thickness of the first and second insulators materials based on a threshold level of capacitance between the sidewall and the conductive material.
Micron Technology, Inc.
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Kevin Alex Hongqi Jin Thy
Torek Schrinsky Li Lu Tran