Cantor Colburn LLP
Replacement gate cross-couple for static random-access memory scaling
A method of fabricating a static random-access memory (SRAM) device includes forming a sacrificial material and replacing the sacrificial material with a metal to form a cross-couple contact on a metal gate stack. A portion of the metal gate stack directly contacts each of a sidewall and an endwall of the cross-couple contact.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Ruilong Kangguo Juntao Veeraraghavan Carl
Xie Cheng Li Basker Radens