Duane Morris LLP
Semiconductor structure and method for integrating SOI devices and bulk devices
This invention discloses a method and a semiconductor structure for integrating at least one bulk device and at least one silicon-on-insulator (SOI) device. The semiconductor structure includes a first substrate having an SOI area and a bulk area, on which the bulk device is formed; an insulation layer formed on the first substrate in the SOI area; and a second substrate, on which the SOI device is formed, stacked on the insulation layer. The surface of the first substrate is not on the substantially same plane as the surface of the second substrate.
Taiwan Semiconductor Manufacturing Company
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Ping-Kun Chao-Hsiung Fu-Liang Hung-Wei Hao-Yu
Wu Wang Yang Chen Chen