Rabin & Berdo, P.C.
Method for fabricating Schottky barrier tunnel transistor
Provided is a method for fabricating a Schottky barrier tunnel transistor (SBTT) that can fundamentally prevent the generation of a gate leakage current caused by damage of spacers formed on both sidewalls of a gate electrode. The method for fabricating a Schottky barrier tunnel transistor, which includes: a) forming a silicon pattern and a sacrificial pattern on a buried oxide layer supported by a support substrate; b) forming a source/drain region on the buried oxide layer exposed on both sides of the silicon pattern, the source/drain region being formed of a metal layer and being in contact with both sidewalls of the silicon pattern; c) removing the sacrificial pattern to expose the top surface of the silicon pattern; and d) forming a gate insulating layer and a gate electrode on the exposed silicon pattern.
Electronics and Telecommunications Research Institute
H H
H01L H01L
additional inventional
Tae-Youb Yark-Yeon Byoung-Chul Moon-Gyu Seong-Jae Myung-Sim Chel-Jong
Kim Kim Park Jang Lee Jun Choi