WPAT, PC
Semiconductor structure and method for manufacturing the same
A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug penetrating into the isolation and reaching the bottom thereof; and a first doping electrode region having the second conductive type, formed within the second well and below the isolation to connect the conductive plug.
UNITED MICROELECTRONICS CORP.
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additional inventional inventional inventional inventional
Chih-Chien Chiu-Ling Chih-Chung Ke-Feng Chiu-Te Wei-Lin
Chang Lee Wang Lin Lee Chen