Westerman, Hattori, Daniels & Adrian, LLP
Semiconductor device and method of manufacturing the semiconductor device
An upper electrode of a ferroelectric capacitor has a first layer formed of a first oxide expressed by a chemical formula AOx1 (A: metal, O: oxygen) using a stoichiometric composition parameter x1, and expressed by a chemical formula AOx2 using a actual composition parameter x2, and a second layer formed of a second oxide, formed on the first layer, expressed by a chemical formula BOy1 (B: metal) using a stoichiometric composition parameter y1 and expressed by a chemical formula BOy2 using a actual composition parameter y2, which includes at least one of stone-wall crystal and column crystal.
Fujitsu Limited
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Wensheng
Wang