Slater Matsil, LLP
Conductive feature formation and structure using bottom-up filling deposition
The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H H H H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional additional additional inventional inventional additional inventional inventional inventional inventional additional additional inventional inventional inventional inventional inventional additional inventional inventional inventional
Chih-Wei Ya-Yi I-Li Wei-Jung Pin-Wen Yu Shih Mei-Hui Chia-Han Ming-Hsing
Chang Cheng Chen Lin Chen Wang Fu Lai Tsai