Harrity Snyder LLP
Non-volatile memory device with increased reliability
A memory device may include a number of memory cells, a first interlayer dielectric formed over the memory cells and at least one metal layer formed over the interlayer dielectric. A dielectric layer may be formed over the metal layer. The dielectric layer may represent a cap layer formed at or near an upper surface of the memory device and may be deposited at a relatively low temperature.
Spansion LLC Advanced Micro Devices, Inc.
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Minh Van Angela T. Wenmei Hirokazu Cinti X. Ning
Ngo Hui Li Tokuno Chen Cheng