Manufacture method of AMOLED pixel drive circuit
The present invention provides a manufacture method of an AMOLED pixel driving circuit. The method utilizes the oxide semiconductor thin film transistor to be the switch thin film transistor of the AMOLED pixel driving circuit to reduce the leakage current of the switch thin film transistor, and the P type polysilicon thin film transistor manufactured by utilizing the Solid Phase Crystallization is employed to be the drive thin film transistor of the AMOLED pixel driving circuit to promote the mobility, the equality and the reliability of the drive thin film transistor, and utilizing the P type thin film transistor to be the drive thin film transistor can form the constant current type OLED element, which is more stable than the source follower type OLED formed by the N type thin film transistor, and meanwhile, the parasitic capacitance is decreased with the top gate structure.
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
H H H H H H H H H H H H H H H H H H H H H H Y H H H H H H H H Y H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L Y02E H01L H01L H01L H01L H01L H01L H01L H01L Y02P H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional additional additional inventional additional inventional inventional additional additional inventional inventional inventional inventional inventional inventional inventional additional inventional inventional
Xiaoxing Yadi Xingyu Yuanjun
Zhang Zhang Zhou Hsu