Katten, Muchin, Zavis, Rosenman
Semiconductor device with increased connection strength between solder balls and wiring layer
There is provided a semiconductor device including (a) a semiconductor chip, (b) a wiring making. electrical connection with the semiconductor chip and containing copper (Cu) therein, (c) a solder ball making contact with the wiring and containing tin (Sn) therein, and (d) a layer made of copper-tin (Cu&#8212;Sn) alloy, sandwiched between the wiring and the solder ball, and having a thickness equal to or greater than about 1.87 micrometers. The copper-tin alloy layer strengthens connection between the wiring and the solder ball, and hence, ensures reduction in occurrence of breakage and/or cracking in the wiring and the solder ball. As a result, it would be possible to avoid the solder ball from being separated from the wiring due to the breakage and cracking. Accordingly, a fabrication yield of the semiconductor device can be enhanced.
NEC Corporation
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Tomoko Masanori
Takizawa Takeuchi