Miles & Stockbridge P.C.
Process for producing polysilicon film
The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.
Hitachi, Ltd.
H H H H H C H H H H C
H01L H01L H01L H01L H01L C30B H01L H01L H01L H01L C30B
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Masakazu Kazuo Hironobu Makoto Yukio Yoshinobu Takeo
Saito Takeda Abe Ohkura Takasaki Kimura Shiba