Myers Bigel Sibley & Sajovec
Methods of forming multilayer dielectric regions using varied deposition parameters
A dielectric region for a device such as a memory cell capacitor is formed by depositing a metal oxide, such as tantalum oxide, on a substrate at a first deposition rate in a first atmosphere maintained within a first temperature range and a first pressure range that produce a first tantalum oxide layer with a desirable step coverage. Metal oxide is subsequently deposited on the first metal oxide layer in a second atmosphere maintained within a second temperature range and a second pressure range that produce a second deposition rate greater than the first deposition rate to form a second tantalum oxide layer on the first tantalum oxide layer. For example, the first atmosphere may be maintained at a temperature in a range from about 350&deg; C. to about 460&deg; C. and a pressure in a range from about 0.01 Torr to about 2.0 Torr during formation of a first tantalum oxide layer, and the second atmosphere may be maintained at a temperature in a range from about 400&deg; C. to about 500&deg; C. and a pressure in a range from about 0.1 Torr to about 10.0 Torr during formation of a second tantalum oxide layer.
Samsung Electronics Co., Ltd.
C H H H H H H C
C23C H01L H01L H01L H01L H01L H01L C23C
inventional additional inventional inventional inventional inventional inventional inventional
Gyung-hoon Seok-jun Se-jin Yong-kuk Han-mei Soon-yeon Wan-don Cha-young Han-jin
Hong Won Lee Jeong Choi Park Kim Yoo Lim