System and method to control a direction of a current applied to a magnetic tunnel junction
A system and method to control a direction of a current applied to a magnetic tunnel junction is disclosed. In a particular embodiment, an apparatus comprises a magnetic tunnel junction (MTJ) storage element and a sense amplifier. The sense amplifier is coupled to a first path and to a second path. The first path includes a first current direction selecting transistor and the second path includes a second current direction selecting transistor. The first path is coupled to a bit line of the MTJ storage element and the second path is coupled to a source line of the MTJ storage element.
QUALCOMM Incorporated
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G11C G11C H01L
inventional inventional inventional
Kangho Jung Pill Hari M.
Lee Kim Rao