Thomas|Horstemeyer, LLP
Semiconductor light emitting device
A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked second potential barrier layers and potential well layers. The first capping layer is a semiconductor layer and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has a band gap larger than that of each of the second potential barrier layers and the band gap of the first capping layer is larger than that of the electron barrier layer. A method of preparing the semiconductor light emitting device is also provided.
XIAMEN SAN'AN OPTOELECTRONICS CO., LTD
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Chi-Ming Yung-Ling Chia-Hung Chan-Chan
Tsai Lan Chang Ling