Westerman, Hattori, Daniels & Adrian, LLP
Optical semiconductor device with quantum dots having configurational anisotropy
An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer 26, and an upper electrode layer 38 formed over the infrared absorption layer 36. The infrared absorption layer includes a quantum dot having dimensions different among directions stacked, and is sensitive to infrared radiation of wavelengths different corresponding to polarization directions.
Fujitsu Limited Technical Research & Development Institute Ministry of Defense of Japan
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H01L B82Y H01L H01L H01L H01L H01L
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Minoru Yusuke Mitsuhiro Hironori Yasuhito Michiya Hiroyasu
Doshida Matsukura Nagashima Nishino Uchiyama Kibe Yamashita