Lee & Morse, P.C.
Non-volatile memory device and fabrication method thereof
A non-volatile memory device includes a buffer oxide film on a substrate; a polysilicon layer on the buffer oxide film; a silicon oxy-nitride (SiON) layer on the polysilicon layer, a first insulator layer on the SiON layer, a nitride film on the first insulator, a second insulator layer on the nitride film, an electrode on the second insulator, and a source/drain in the polysilicon layer.
Samsung Mobile Display Co., Ltd.
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Jun Sik Sung Wook Byoung Deog Ki Yong Hyun Min Ho Kyoon Jun Sin
Kim Jung Choi Lee Kim Chung Yi