JCIPRNET
Transistor including active layer having through holes and manufacturing method thereof
A transistor including a substrate, a gate layer, a first insulating layer, an active layer, a source and a drain is provided. The gate layer is disposed on the first insulating layer, and has a plurality of first through holes. The first insulating layer covers the gate layer and a part of the substrate exposed by the first through holes, and forms a plurality of recesses respectively corresponding to the first through holes. The active layer is disposed on the first insulating layer, and has a plurality of second through holes. The second through holes communicate with the recesses, respectively. The source is disposed on a part of the active layer. The drain is disposed on another part of the active layer. A manufacturing method of the transistor is also provided.
E Ink Holdings Inc.
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Chia-Wei Hsiao-Wen Chuang-Chuang Cheng-Hang
Chou Zan Tsai Hsu