Strained CMOS on strain relaxation buffer substrate
A set of silicon fins for n-type FinFET devices and a set of silicon germanium fins for p-type FinFET devices are provided on a strain relaxation buffer (SRB) substrate. Each fin in the set of silicon fins is cut forming a set of cut silicon fins having a set of vertical faces at a fin end of a respective cut silicon fin. Each fin in the set of silicon germanium fins is cut forming a set of cut silicon germanium fins having a set of vertical faces at a fin end of a respective silicon germanium fin. A set of tensile dielectric structures is formed. Each of the tensile dielectric structures respectively contact the vertical faces of respective fin ends of the cut silicon fins to maintain tensile strain at the fin ends of the set of cut silicon fins. A set of compressive dielectric structures are formed. Each of the compressive dielectric structures respectively contact the vertical faces of respective fin ends of the cut silicon germanium fins to maintain compressive strain at the fin ends of the set of cut silicon fins. Another aspect of the invention is a device which is created by the method.
International Business Machines Corporation
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Balasubramanian Juntao Kangguo
Pranatharthiharan Li Cheng