Methods of forming photolithographic patterns by negative tone development
Provided are methods of forming photolithographic patterns by negative tone development. The methods employ a photoresist composition that includes a polymer having a unit of the following general formula (I):wherein: R1 represents hydrogen or a C1 to C3 alkyl group; a represents an integer from 1 to 3; and b represents 0 or 1. The methods find particular applicability in the manufacture of semiconductor devices.
Rohm and Haas Electronic Materials LLC
G G G G G G
G03F G03F G03F G03F G03F G03F
inventional inventional inventional additional additional additional
Jong Keun Cecily Seung-Hyun Young Cheol Jibin
Park Andes Lee Bae Sun