F. Chau & Associates, LLC
Three-dimensional semiconductor memory device with vertical structures penetrating a dummy insulating pattern in a connection region
A three-dimensional semiconductor memory device and a method of manufacturing the same. The device may include a substrate including a cell array region and a connection region, an electrode structure including electrodes vertically stacked on the substrate, a plurality of first vertical structures penetrating the electrode structures on the cell array region, and a plurality of second vertical structures penetrating the electrode structures on the connection region. Each of the first and second vertical structures may include a lower semiconductor pattern connected to the substrate and an upper semiconductor pattern connected to the lower semiconductor pattern.
SAMSUNG ELECTRONICS CO., LTD.
H H H H H H H
H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional additional
Young-Jin Jongwon
Jung Kim