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Sb—Te—Ti phase-change memory material and Ti—Sb2Te3 phase-change memory material
An Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula SbxTeyTi100−x−y, where 0<x<80 and 0<y<100−x. When the Sb—Te—Ti phase-change memory material is a Ti—Sb2Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. The crystallization temperature of the Sb—Te—Ti phase-change memory material is significantly risen, retention is improved, and thermal stability is enhanced; meanwhile, the amorphous state resistance decreases, and the crystalline state resistance increases; and the Sb—Te—Ti phase-change memory material has wide application in phase-change memories.
SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
G H H H
G11C H01L H01L H01L
inventional inventional inventional inventional
Songlin Zhitang Liangcai Feng Cheng Kun Min Xilin
Feng Song Wu Rao Peng Ren Zhu Zhou