Seyfarth Shaw LLP
Logic finFET high-K/conductive gate embedded multiple time programmable flash memory
A method for fabricating a multiple time programmable (MTP) device includes forming fins of a first conducting type on a substrate of a second conducting type. The method further includes forming a floating gate dielectric to partially surround the fins. The method also includes forming a floating gate on the floating gate dielectric. The method also includes forming a coupling film on the floating gate and forming a coupling gate on the coupling film.
QUALCOMM INCORPORATED
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Seung Hyuk Bin Xia
Kang Yang Li