WPAT, P.C., Intellectual Property Attorneys
Semiconductor device and manufacturing method thereof
A semiconductor device includes a gate structure on a substrate; a raised source/drain region adjacent to the gate structure; and an interconnect plug on the doped region. The raised source/drain region includes a top surface being elevated from a surface of the substrate; and a doped region exposed on the top surface. The doped region includes a dopant concentration greater than any other portions of the raised source/drain region. A bottommost portion of the interconnect plug includes a width approximate to a width of the doped region.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Ko-Min I-Chih Yung-Fa Fu-Tsun Ying-Lang Chih-Mu
Lin Chen Lee Tsai Wang Huang