Haynes and Boone, LLP
Multi-ion beam implantation apparatus and method
An multi-ion beam implantation apparatus and method are disclosed. An exemplary apparatus includes an ion beam source that emits at least two ion beams; an ion beam analyzer; and a multi-ion beam angle incidence control system. The ion beam analyzer and the multi-ion beam angle incidence control system are configured to direct the emitted at least two ion beams to a wafer.
Taiwan Semiconductor Manufacturing Company, Ltd.
H G H H H
H01J G21K H01J H01J H01J
inventional inventional inventional inventional inventional
Chi-Ming Chih-Hong Chin-Hsiang Nai-Han Chun-Lin
Yang Hwang Lin Cheng Chang