Kratz, Quintos & Hanson, LLP
Method for forming barrier film and method for forming electrode film
In the present invention, a barrier film 20 is formed by forming a tungsten nitride film 21 and subsequently by forming a tungsten silicide film 22. The tungsten silicide film 22 is exposed at the surface of the barrier film 20, and an electrode film 25′ is formed so as to be brought into close contact with the tungsten silicide film 22. Since a conductive material constituting the electrode film 25′ is chemically bound to silicon atoms in the tungsten silicide film 22, the adhesion between the barrier film 20 and the electrode film 25′ is high, and the electrode film 25′ resists peeling from the barrier film 20. Further, agglomeration is not likely to occur in the electrode film 25′ during annealing.
Ulvac Inc.
H H C C C H
H01L H01L C23C C23C C23C H01L
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Nobuyuki
Kato