Manufacturing method of semiconductor memory device
A semiconductor memory device includes a semiconductor substrate, a first support layer, a first electrode, a capacitor dielectric layer, and a second electrode. The first support layer is disposed on the semiconductor substrate. The first electrode is disposed on the semiconductor substrate and penetrates the first support layer. The capacitor dielectric layer is disposed on the first electrode. The second electrode is disposed on the semiconductor substrate, and at least a part of the capacitor dielectric layer is disposed between the first electrode and the second electrode. The first support layer includes a carbon doped nitride layer, and a carbon concentration of a bottom portion of the first support layer is higher than a carbon concentration of a top portion of the first support layer.
Fujian Jinhua Integrated Circuit Co., Ltd. UNITED MICROELECTRONICS CORP.
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Ying-Chiao Kai-Ping Po-Chun Jui-Min Wei-Hsin Wen-Chieh Li-Wei Yi-Wei Tzu-Chin Chien-Ting Chia-Lung Tsung-Ying
Wang Chen Chen Lee Liu Lu Feng Chen Wu Ho Chang Tsai