Haynes and Boone, LLP
Method and photoresist with zipper mechanism
The present disclosure provides a resist utilized in a photolithography patterning process. The resist includes a polymeric material having a plurality of zipper molecules, each including a first zipper portion and a second zipper portion, wherein the first and second zipper portions each include a plurality of zipper branches bonded together in pairs and cleavable to one of thermal energy, radiation energy, and chemical reaction.
Taiwan Semiconductor Manufacturing Company, Ltd.
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inventional inventional inventional
Fong-Cheng Ching-Yu
Lee Chang