Hauptman Ham, LLP
Metal gate electrode of a field effect transistor
A method of fabricating a metal gate electrode of a field effect transistor includes forming a dielectric layer over an active region, and forming an opening in the dielectric layer. The method further includes partially filling the opening with a high-dielectric-constant material, partially filling the opening with a conformal first metal material over the high-dielectric-constant material, and filling the opening with a capping layer over the first metal material. The method further includes partially removing the first metal material and capping layer in the opening using a wet etching process. The method further includes fully removing the remaining capping layer in the opening using a wet etching process. The method further includes depositing a second metal material in the opening over the remaining first metal material, and planarizing the second metal material.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Peng-Soon Xiong-Fei Cheng-Hao Kuang-Yuan Jian-Hao Chun-Yuan Da-Yuan Fan-Yi
Lim Yu Hou Hsu Chen Chou Lee Hsu