Morgan, Lewis & Bockius LLP
Method of manufacturing nonvolatile memory cell
The present invention relates to a method of manufacturing a nonvolatile memory cell. The present invention uses tungsten (W) as an upper layer of a control gate electrode in order to integrate the memory cell and performs an ion implantation process for forming a source region and a drain region before a selective oxidization process that is performed to prevent abnormal oxidization of tungsten (W). Therefore, the present invention can reduce a RC delay time of word lines depending on integration of the memory cell and also secure a given distance between a silicon substrate and a tunnel oxide film. As a result, the present invention can solve a data retention problem of the flash memory.
Hynix Semiconductor Inc.
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Min Kuck Sung Mun Sang Bum Young Bok Jum Soo
Cho Jung Lee Lee Kim