IP & T Group LLP
Method of manufacturing semiconductor memory device
A method of manufacturing a semiconductor memory device comprises forming a plurality of gate lines on a semiconductor substrate, forming an insulating layer on the gate lines, and performing a cleaning process using a surfactant-free cleaning solution having a viscosity of lower than 2 cP and an acidity of lower than 3 pH to remove residue from the surface of the insulating layer.
SK Hynix Inc.
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H01L H01L H01L C11D H01L
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Seung Cheol Duk Eui
Lee Lee