Jones Day
Transistor with asymmetric source and drain regions
Semiconductor structures and methods for forming a semiconductor structure are provided. An active semiconductor region is disposed in a substrate. A gate is formed over the substrate. Source and drain regions of a transistor are formed in the active semiconductor region on opposite sides of the gate. The drain region has a first width, and the source region has a second width that is not equal to the first width.
Taiwan Semiconductor Manufacturing Company Limited
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Ying-Ta Tzu-Jin Ho-Hsiang Chi-Hsien Hua-Chou Ru-Gun Chien-Chih Hsien-Yuan
Lu Yeh Chen Lin Tseng Liu Ho Liao