Tutunjian & Bitetto, P.C.
Fabrication of a vertical fin field effect transistor having a consistent channel width
A method of forming a vertical fin field effect transistor having a consistent channel width, including forming one or more vertical fin(s) on the substrate, wherein the one or more vertical fin(s) have a tapered profile, oxidizing the one or more vertical fin(s) to form an oxide by consuming at least a portion of the vertical fin material, and removing the oxide from the one or more vertical fin(s), wherein the one or more vertical fin(s) include a tapered upper portion, a tapered lower portion and a straight channel portion there between.
International Business Machines Corporation
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Juntao Kangguo
Li Cheng