MKG, LLC
MIM capacitor of embedded structure and method for making the same
The present application has disclosed an MIM capacitor of an embedded structure, wherein an interlayer film is formed between a first metal wire layer and a second metal wire layer; the MIM capacitor is formed on the surface of the interlayer film; a capacitor lower electrode is connected to the first metal wire layer by means of a bottom first via, the first metal wire layer is connected, by means of a second via outside the capacitor lower electrode, to a lower electrode lead-out structure formed by the second metal wire layer; and an upper electrode lead-out structure formed by the second metal wire layer covers the surface of the capacitor upper electrode of the MIM capacitor. The present application has further disclosed a method for manufacturing an MIM capacitor of an embedded structure. In the present application, the performance and stability of the capacitor can be improved.
Hua Hong Semiconductor (Wuxi) Limited
H H H
H01L H01L H01L
inventional inventional inventional
Yu
Chen