Harness, Dickey & Pierce
High electron mobility transistors, methods of manufacturing the same, and electronic devices including the same
Provided are high electron mobility transistors (HEMTs), methods of manufacturing the HEMTs, and electronic devices including the HEMTs. An HEMT may include an impurity containing layer, a partial region of which is selectively activated. The activated region of the impurity containing layer may be used as a depletion forming element. Non-activated regions may be disposed at opposite side of the activated region in the impurity containing layer. A hydrogen content of the activated region may be lower than the hydrogen content of the non-activated region. In another example embodiment, an HEMT may include a depletion forming element that includes a plurality of regions, and properties (e.g., doping concentrations) of the plurality of regions may be changed in a horizontal direction.
Samsung Electronics Co., Ltd.
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inventional additional inventional inventional inventional
Hyo-ji Woo-chul Ki-yeol Jae-joon Jai-kwang Young-hwan
Choi Jeon Park Oh Shin Park