McDermott Will & Emery LLP
Method of manufacturing a semiconductor device with penetration electrodes that protrude from a rear side of a substrate formed by thinning the substrate
A method for manufacturing a semiconductor device can prevent defective products resulting from a plating liquid when surfaces of protruded portions of penetration electrodes are subjected to plating. An organic insulation film (14) is formed on one surface of a substrate proper (10), and a support member (16) is adhered to the organic insulation film (adhesion step). A rear side of the substrate proper is removed until protruded portions (6) of penetration electrodes (7) are exposed, thereby to form a semiconductor substrate (5). Plating films (8) are formed on the surfaces of the protruded portions (6), and the support member and the organic insulation film are removed from the semiconductor substrate. The organic insulation film has an adhesive property and chemical resistance to chemical substances used in respective steps after the adhesion step, and it is at least dissolved in or peeled off from a chemical substance used in the removal step.
Taiyo Yuden Co., Ltd. Shinko Electric Industries Co., Ltd. Mitsubishi Denki Kabushiki Kaisha Sharp Kabushiki Kaisha
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Yoshihiko Tomotoshi Masahiro Tomonori
Nemoto Sato Sunohara Fujii