Duane Morris LLP
Fluorine doped non-volatile memory cells and methods for forming the same
A non-volatile memory cell is disclosed. In one example, the non-volatile memory cell includes: a substrate; a first oxide layer over the substrate; a floating gate over the first oxide layer; a second oxide layer over the floating gate; and a control gate at least partially over the second oxide layer. At least one of the first oxide layer and the second oxide layer comprises fluorine.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Wen-Chih Tza-Hao Shiuan-Jeng Po-Ming Hung-Lin
Chiang Wang Lin Chen Chen