Slater Matsil, LLP
Conductive feature formation and structure
Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Hung-Yi Yu-Ting Min-Hsiu Chun Chieh Cheng-Wei
Huang Lin Hung Wang Chang