Method of adjusting channel widths of semiconductive devices
A method of adjusting channel widths of semiconductive devices includes providing a substrate divided into a first region and a second region, wherein the substrate comprises numerous fins. A first implantation process is performed on the fins within the first region. Then, a second implantation process is performed on the fins within the second region, wherein the first implantation process and the second implantation process are different from each other in at least one of the conditions comprising dopant species, dopant dosage or implantation energy. After that, part of the fins within the first region and the second region are removed simultaneously to form a plurality of first recesses within the first region and a plurality of second recesses within the second region. Finally, a first epitaxial layer and a second epitaxial layer are formed to fill up each first recess and each second recess, respectively.
UNITED MICROELECTRONICS CORP.
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Chia-Hsun Meng-Lin Chiung-Lin Jan-Fu Shin-Feng En-Chiuan Yu-Ting Yu-Te
Tseng Tsai Hsu Yang Su Liou Hung Chen