Slater & Matsil, L.L.P.
Shallow trench isolation with improved structure and method of forming
A shallow trench isolation (STI) structure has a top portion tapering in width from wide to narrow in a direction from a substrate surface, from a first width at a top of the first portion to a second width at a bottom of the first portion. The STI structure also includes a bottom portion below the top portion, which expands from the bottom of the top portion to a substantially widened lateral distance having a third width. The third width is, in general, substantially larger than the second width. The inventive STI structure can provide desired isolation characteristics with a significantly reduced aspect ratio, thus suitable for device isolations in advanced processing technology.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H
H01L H01L
inventional inventional
Jhon-Jhy Chia-Wei Chao-Cheng
Liaw Chang Chen