Haynes and Boone, LLP
Method of mask simulation model for OPC and mask making
The present disclosure provides an integrated circuit (IC) method in accordance with some embodiments. The method includes building a mask model to simulate a mask image and a compound lithography computational model to simulate a wafer pattern; calibrating the mask model using a measured mask image; calibrating the compound lithography computational model using a measured wafer data and the calibrated mask model; and performing an optical proximity correction (OPC) process to an IC pattern using the calibrated compound computational model, thereby generating a mask pattern for mask fabrication.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Hsu-Ting Ru-Gun Chih-Shiang
Huang Liu Chou