Muir Patent Law, PLLC
Semiconductor device
Disclosed is a semiconductor device that comprises a substrate including a first active pattern vertically protruding from a top surface of the substrate, and a first source/drain pattern filing a first recess formed on an upper portion of the first active pattern. The first source/drain pattern comprises a first semiconductor pattern and a second semiconductor pattern on the first semiconductor pattern. The first semiconductor pattern has a first face, a second face, and a first corner edge defined when the first face and the second face meet with each other. The second semiconductor pattern covers the first face and the second face of the first semiconductor pattern and exposes the first corner edge.
SAMSUNG ELECTRONICS CO., LTD.
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Min-Hee Seokhoon Seung Hun Sanggil Choeun
Choi Kim Lee Lee Lee