MKG, LLC
Sonos nonvolatile memory and method for manufacturing same
A SONOS nonvolatile memory includes a second gate structure of a selectron isolated from a first gate structure of a memotron by an inter-gate dielectric isolation layer formed on a first side of the first gate structure through self-alignment. The second gate structure is formed on a first side of the inter-gate dielectric isolation layer through self-alignment. A cell structure is formed by two adjacent cell structures. A first window defines an area formed by the two first gate structures. Two sides of each first gate structure are defined through self-alignment by first top silicon nitride layers formed on inner sides of the first window. First silicon nitride spacers are formed on second sides of the first gate structures through self-alignment. The bottom area of a contact hole between the second sides of the first gate structures is defined through self-alignment by the two first silicon nitride spacers.
Shanghai Huahong Grace Semiconductor Manufacturing Corporation
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Hualun Kegang
Chen Zhang