Haynes and Boone, LLP
Method and structure for mandrel and spacer patterning
A semiconductor device includes a first active fin on a substrate; a second active fin on the substrate and separate from the first active fin; and a first fin stub on the substrate, wherein the first fin stub connects a first end of the first active fin and a first end of the second active fin, wherein the fin stub is lower than both the first and the second active fins in height, wherein from a top view the first active fin is oriented lengthwise in a first direction, and the first fin stub is oriented lengthwise in a second direction that is different from the first direction.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Shih-Chi Kuei-Shun Chih-Hsiung Chung-Ming Chi-Kang
Fu Chen Peng Wang Chang