Kilpatrick Townsend & Stockton LLP
Method and device for reducing FinFET self-heating effect
A method of manufacturing a semiconductor device includes providing a semiconductor substrate, forming a diamond film on the substrate, etching the diamond film to form a first trench that extends to the substrate, epitaxially growing a first semiconductor material in the first trench to form a first semiconductor fin structure, and removing an upper portion of the diamond film to expose an upper portion of the first semiconductor fin structure.
Semiconductor Manufacturing International (Shanghai) Corporation Semiconductor Manufacturing International (Beijing) Corporation
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Yong
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