Haynes and Boone, LLP
Blocking layer material composition and methods thereof in semiconductor manufacturing
The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer on a substrate; forming a blocking layer on the material layer, wherein a bottom portion of the blocking layer reacts with the material layer, resulting in a capping layer that seals the material layer from an upper portion of the blocking layer. The method further includes forming a photoresist layer on the blocking layer; exposing the photoresist layer; and developing the photoresist layer, resulting in a patterned photoresist layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Ching-Yu Chin-Hsiang Siao-Shan Chen-Yu
Chang Lin Wang Liu