Myers Bigel & Sibley, P.A.
High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture
Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a stressing layer on a substrate. The method may include doping the stressing layer with dopants. The method may include forming a silicide layer on the stressing layer. Moreover, the stressing layer may include a first lattice constant different from a second lattice constant of the substrate.
Samsung Electronics Co., Ltd.
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Dureseti Huajie Omer H.
Chidambarrao Chen Dokumaci