Hauptman Ham, LLP
Mechanisms of forming damascene interconnect structures
An interconnect structure includes a first trench and a second trench. The second trench is wider than the first trench. Both trenches are lined with a diffusion barrier layer, and a first conductive layer is deposited over the diffusion barrier layer. A metal cap layer is deposited over the first conductive layer. A second conductive layer is deposited over the metal cap layer in the second trench.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Hung-Wen Ming-Hsing Chun-Chieh Syun-Ming Wen-Jiun Chien-An
Su Tsai Lin Jang Liu Chen