Fish & Richardson P.C.
Thin film transistors and semiconductor device
The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component and germanium in an amount of not smaller than 0.1 atomic % but not larger than 10 atomic % while adding a metal element thereto, wherein not smaller than 20% of the lattice plane {101} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film, not larger than 3% of the lattice plane {001} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film, and not larger than 5% of the lattice plane {111} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film as detected by the electron backscatter diffraction pattern method.
Semiconductor Energy Laboratory Co., Ltd.
H H
H01L H01L
inventional inventional
Chiho Shunpei Tamae Takeshi Toru Yasuyuki Taketomi Kenji
Kokubo Yamazaki Takano Shichi Mitsuki Arai Asami Kasahara