Muncy, Geissler, Olds & Lowe, P.C.
Read operation of MRAM using a dummy word line
Systems and methods relate to a read operation on a magnetoresistive random access memory (MRAM). Prior to determining whether there is a hit in the MRAM for a first address corresponding to the read operation, a dummy word line is activated, based on at least a subset of bits of the first address. A settling process for a reference voltage for reading MRAM bit cells at the first address is initiated, based on dummy cells connected to the dummy word line and a settled reference voltage is obtained. If there is a hit, a first word line is activated based on a row address determined from the first address, and the MRAM bit cells at the first address are read using the settled reference voltage.
QUALCOMM Incorporated
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Taehyun Sungryul Xiangyu Jung Pill
Kim Kim Dong Kim