Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Plasma processing apparatus and method
An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
Tokyo Electron Limited
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Naoki Akira Yohei Hiroki Hidetoshi Toshihiro Daisuke Kazuo Kunihiko Noriyuki Masashi Manabu Chishio Masaru Ryuji Manabu
Matsumoto Koshiishi Yamazawa Yamazaki Hanaoka Hayami Yano Kibi Hinata Kobayashi Saito Iwata Koshimizu Sugimoto Ohtani Sato