Fitzpatrick, Cella, Harper & Scinto
Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
Canon Kabushiki Kaisha Tokyo Institute of Technology
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Kenji Katsumi Toshio Masafumi Hideo
Nomura Nakagawa Kamiya Sano Hosono