Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Field effect transistor with metal oxide gate insulator and sidewall insulating film
Provided is a semiconductor device including a silicon substrate, a gate insulator disposed on the silicon substrate and containing a metal oxide, a gate electrode disposed on the gate insulator, and a sidewall insulating film disposed on a side of the gate insulator and the gate electrode and containing aluminum, silicon, oxygen and nitrogen.
Kabushiki Kaisha Toshiba
H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional additional additional additional inventional additional additional additional inventional inventional inventional inventional
Takeshi Hideki Noburu
Yamaguchi Satake Fukushima