Myers Bigel Sibley & Sajovec
Method for manufacturing capacitor of semiconductor memory device by two-step thermal treatment
A method for manufacturing a capacitor of a semiconductor memory device by a two-step thermal treatment is provided. A lower electrode is formed on a semiconductor substrate. A dielectric layer is formed over the lower electrode. An upper electrode formed of a noble metal is formed over the dielectric layer. The resultant having the upper electrode undergoes a first thermal treatment under a first atmosphere including oxygen at a first temperature which is selected to be within a range of 200-600&deg; C., which is lower than the oxidation temperature of the upper electrode. The first thermally treated resultant undergoes a second thermal treatment under a second atmosphere without oxygen at a second temperature which is selected to be within a range of 300-900&deg; C., which is higher than the first temperature.
Samsung Electronics Co., Ltd.
H H
H01L H01L
inventional inventional
Cha-young Soon-yeon Seok-jun Doo-sup Eun-ae Yun-jung Wan-don
Yoo Park Won Hwang Chung Lee Kim