Slater & Matsil, L.L.P.
Body-tied, strained-channel multi-gate device and methods of manufacturing same
A fin-FET or other multi-gate transistor is disclosed. The transistor comprises a semiconductor substrate having a first lattice constant, and a semiconductor fin extending from the semiconductor substrate. The fin has a second lattice constant, different from the first lattice constant, and a top surface and two opposed side surfaces. The transistor also includes a gate dielectric covering at least a portion of the top surface and the two opposed side surfaces, and a gate electrode covering at least a portion of the gate dielectric. The resulting channel has a strain induced therein by the lattice mismatch between the fin and the substrate. This strain can be tuned by selection of the respective materials.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Hong-Nien Tiao-Yuan Horng-Chih
Lin Huang Lin