Method for reducing dishing effects during a chemical mechanical polishing process
A method for reducing dishing effects is provided. The method is applied to polish a surface of a wafer containing a silicate film thereon. The method comprises using a polishing slurry containing organic alkyl or aryl compound with at least one hydroxyl group (i.e. ROH compound) during the process of polishing the silicate film. An organic hydrophobic layer created over the silicate film in contact with the ROH compound thus alleviates the undesirable dishing effects. The organic hydrophobic layer is thereafter cleaned using ozone-containing deionized water.
Macronix International Co. Ltd.
H B H B
H01L B24B H01L B24B
additional inventional inventional inventional
Ching-Yu
Chang