Muncy, Geissler, Olds & Lowe, P.C.
High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory
Non-volatile memory devices and logic devices are fabricated using processes compatible with high dielectric constant/metal gate (HK/MG) processes for increased cell density and larger scale integration. A doped oxide layer, such as a silicon-doped hafnium oxide (HfO2) layer, is implemented as a ferroelectric dipole layer in a nonvolatile memory device.
QUALCOMM Incorporated
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Zhongze Yu Bin Jeffrey Junhao Xiaonan Xia
Wang Lu Yang Xu Chen Li