Lee IP Law, P.C.
Semiconductor device including interconnection structure including copper and tin and semiconductor package including the same
A semiconductor device and a semiconductor package, the device including a pad interconnection structure that penetrates a first buffer dielectric layer and a second buffer dielectric layer, wherein the pad interconnection structure includes copper and tin, the pad interconnection structure includes a central part, a first intermediate part surrounding the central part; a second intermediate part surrounding the first intermediate part, and an outer part surrounding the second intermediate part, a grain size of the outer part is less than a grain size of the second intermediate part, the grain size of the second intermediate part is less than a grain size of the first intermediate part, and the grain size of the first intermediate part is less than a grain size of the central part.
SAMSUNG ELECTRONICS CO., LTD.
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additional additional additional inventional additional additional additional additional additional additional additional additional additional additional inventional additional inventional inventional additional additional additional additional inventional inventional additional additional inventional additional additional additional additional additional additional additional additional additional additional additional additional inventional additional additional additional inventional additional additional additional additional inventional additional additional additional additional additional additional additional additional additional inventional additional additional
Hoonjoo Hoechul Ju-Il Pil-Kyu Seongmin Jaehyung
Na Kim Choi Kang Son Park