Birch, Stewart, Kolasch & Birch, LLP
Junction field effect transistor (JFET) with first and second top layer of opposite conductivity type for high driving current and low pinch-off voltage
A semiconductor device includes a semiconductor substrate, a first well region, and a second well region. The semiconductor substrate has a first conductivity type. The first and second well regions are disposed in the semiconductor substrate. The first and second well regions have a second conductivity type that is opposite to the first conductivity type. The semiconductor device also includes a first top layer and a second top layer. The first top layer is disposed in the semiconductor substrate. The first top layer extends from the first well region to the second well region. The first top layer has the first conductivity type. The second top layer is disposed in the semiconductor substrate and on the first top layer. The second top layer extends from the first well region to the second well region. The second top layer has the second conductivity type.
Vanguard International Semiconductor Corporation
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Chih-Cherng Manoj Wen-Hsin Shin-Cheng Chia-Hao
Liao Kumar Lin Lin Lee