Knobbe, Martens, Olson & Bear, LLP
Semi-insulating silicon carbide monocrystal and method of growing the same
A semi-insulating silicon carbide monocrystal and a method of growing the same are disclosed. The semi-insulating silicon carbide monocrystal comprises intrinsic impurities, deep energy level dopants and intrinsic point defects. The intrinsic impurities are introduced unintentionally during manufacture of the silicon carbide monocrystal, and the deep energy level dopants and the intrinsic point defects are doped or introduced intentionally to compensate for the intrinsic impurities. The intrinsic impurities include shallow energy level donor impurities and shallow energy level acceptor impurities. A sum of a concentration of the deep energy level dopants and a concentration of the intrinsic point defects is greater than a difference between a concentration of the shallow energy level donor impurities and a concentration of the shallow energy level acceptor impurities, and the concentration of the intrinsic point defects is less than the concentration of the deep energy level dopants. The semi-insulating SiC monocrystal has resistivity greater than 1×105 Ω·cm at room temperature, and its electrical performances and crystal quality satisfy requirements for manufacture of microwave devices. The deep energy level dopants and the intrinsic point defects jointly serve to compensate the intrinsic impurities, so as to obtain a high quality semi-insulating single crystal.
Institute of Physics, Chinese Academy of Sciences
H H C C C C H C
H01L H01L C30B C30B C30B C30B H01L C30B
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Tonghua Bo Gang Wenjun Yu Chunjun Xiaolong Longyuan
Peng Wang Wang Wang Liu Liu Chen Li