Lerner, Davis, Littenberg, Krumholz & Mentlik, LLP
Method for wet etching of block copolymer self-assembly pattern
The present invention relates to a process for selectively removing a block on one side using a wet etching process in connection with self-assembly block copolymer thin films that have etching-resisting properties different from each other. The present invention can form a vertical nanopore structure having a high aspect ratio, even in the case of a thick film which has a vertically oriented cylinder self-assembly structure and which has one or more periods, by overcoming the limit of the prior art, which cannot implement a vertical pore structure through wet etching.
LG Chem, Ltd.
H B H H G H H H H B
H01L B81C H01L H01L G03F H01L H01L H01L H01L B81C
additional additional additional inventional inventional inventional inventional inventional inventional inventional
Sung Soo No Jin Eun Young Mi Sook Jung Keun Se Jin Je Gwon
Yoon Park Choi Lee Kim Ku Lee