IP & T Group LLP
Method for fabricating capacitor with high aspect ratio
A method for fabricating a capacitor includes: forming a first silicon layer over a semiconductor substrate, where the first silicon layer is doped with a dopant; forming an undoped second silicon layer over the first silicon layer; forming an opening by etching the second silicon layer and the first silicon layer; forming a storage node in the opening; and removing the first silicon layer and the second silicon layer.
SK Hynix Inc.
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H01L H01L
additional inventional
Kee-Jeung Seung-Mi Kyung-Woong Ji-Hoon Yun-Hyuck Beom-Yong Jae-Hyoung Woo-Young Kwan-Woo
Lee Lee Park Ahn Ji Kim Koo Park Do