Thomas, Kayden, Horstemeyer & Risley
Semiconductor device and fabrication method thereof
A semiconductor device and fabrication thereof. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN barrier is conformably formed in the opening, at a thickness less than 20 Å. A copper layer is formed over the atomic layer deposited (ALD) TaN barrier to fill the opening.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chii-Ming Shau-Lin Gin Jie Chih-Wei Chao-Hsien
Wu Shue Wang Chang Peng