Jianq Chyun IP Office
Resistive random access memory and method of fabricating the same
A resistive random access memory includes a first electrode layer, a second electrode layer, and a stacked structure disposed between the first electrode layer and the second electrode layer. The stacked structure includes a conductive layer and a resistance variable layer. The material of the conductive layer includes HfOx, the material of the resistance variable layer includes HfOy, and x<y. Additionally, the diffusion rate of oxygen ions in the conductive layer is lower than the diffusion rate of the oxygen ions in metal.
Winbond Electronics Corp.
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Shuo-Che Chia-Hua
Chang Ho