Birch, Stewart, Kolasch & Birch LLP
Semiconductor device including zener diode and method of manufacturing thereof
A semiconductor device, including an insulator formed on a top surface of a semiconductor substrate, a semiconductor layer, containing a first region of a first conductivity type, formed on the insulator layer, wherein the first region is a P+ region or an N+ region, a second region of a second conductivity type in direct contact with the first region and forming a P-N junction with the first region, wherein the P-N junction comprises a first portion parallel to the top surface of the semiconductor substrate, and the second region is the semiconductor substrate and partially covered by the semiconductor layer, a first metallization region in electrical contact with the first region and a second metallization region in electrical contact with the second region.
Vanguard International Semiconductor Corporation
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Manoj Chih-Cherng Priyono Tri Shang-Hui Chia-Hao
Kumar Liao Sulistyanto Tu Lee