Maschoff Brennan
Formation of copper layer structure with self anneal strain improvement
In a method for manufacturing an interconnect structure, a dielectric layer is removed to form a first recess and a second recess. The first recess is below the second recess. A first metal layer is deposited to fill the first recess and a first portion of the second recess. A carbon-containing layer is deposited over the first metal layer to fill a second portion of the second recess, which is over the first portion. A second metal layer is deposited over the carbon-containing layer to fill a third portion of the second recess, which is over the second portion. A carbon concentration of the carbon-containing layer is greater than a carbon concentration of the first metal layer and a carbon concentration of the second metal layer, and the carbon concentration of the first metal layer is substantially the same as the carbon concentration of the second metal layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
C H H H C C B C
C25D H01L H01L H01L C25D C25D B32B C25D
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Yu-Sheng Hung-Hsu Jun-Nan Chi-Cheng Shiu-Ko
Wang Chen Nian Hung Jangjian