Eschweiler & Potashnik, LLC
Interconnect landing method for RRAM technology
The present disclosure relates to a method of forming an integrated circuit. In some embodiments, the method may be performed by forming a lower interconnect structure within a first inter-level dielectric (ILD) layer over an upper surface of a substrate, and forming a resistive random access memory (RRAM) device over the lower interconnect structure. A second ILD layer is formed over the RRAM device. The second ILD layer is patterned to remove a part of the second ILD layer that defines a cavity. The cavity vertically extends from an upper surface of the second ILD layer to an upper surface of the RRAM device and laterally extends past opposing sidewalls of the RRAM device. An upper interconnect wire is formed within the cavity.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Wen-Ting Hsia-Wei Chih-Yang Chin-Chieh Yu-Wen Jen-Sheng Kuo-Chi
Chu Chen Chang Yang Liao Yang Tu