Devices and process for producing devices containing silicon nitride films
 Silicon nitride regions suitable for applications such as capping layers in integrated circuit fabrication are produced by an advantageous plasma deposition process. This process utilizes a combination of gases, including a silicon-containing gas, a nitrogen-containing gas, a fluorine-containing gas, and a hydrogen-containing gas. Silicon nitride having a low density of defect states and thus having excellent dielectric properties is produced. 
AT&T Bell Laboratories
H H H H
H01L H01L H01L H01L
inventional inventional inventional inventional
Daniel L. John A. Dale E. Chorng-Ping
Flamm Mucha Ibbotson Chang