IP & T Group LLP
Semiconductor device with dual work function gate stacks and method for fabricating the same
A method for fabricating a semiconductor device includes forming a gate dielectric layer over a substrate; forming a metal containing layer, containing an effective work function adjust species, over the gate dielectric layer; forming an anti-reaction layer over the metal containing layer; increasing an amount of the effective work function adjust species contained in the metal containing layer; and forming, on the substrate, a gate stack by etching the anti-reaction layer, the metal containing layer, and the gate dielectric layer.
SK Hynix Inc.
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Seung-Mi Se-Aug Hyung-Chul Yun-Hyuck
Lee Jang Kim Ji