Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby
Methods and associated structures of forming a microelectronic device are described. Those methods may include creating an amorphous region in source/drain regions of a substrate by ion implantation with an electrically neutral dopant, annealing with a first anneal that removes defects without completely re-crystallizing the amophous region, ion implantation of electrically active dopant to a depth shallower than the remaining amorphous region, followed by a second anneal.
Intel Corporation
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Seok-Hee Patrick H. Chad D. Jack Sridhar
Lee Keys Lindfors Hwang Govindaraju