Haynes and Boone, LLP
Photodiode with multi-epi films for image sensor
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate; a first epitaxy semiconductor layer disposed on the semiconductor substrate and having a first type of dopant and a first doping concentration; a second epitaxy semiconductor layer disposed over the first epitaxy semiconductor layer and having the first type of dopant and a second doping concentration less than the first doping concentration; and an image sensor on the second epitaxy semiconductor layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Jen-Cheng Wen-De Dun-Nian Jyh-Ming Chun-Chieh
Liu Wang Yaung Hung Chuang