Birch, Stewart, Kolasch & Birch, LLP
Semiconductor structure with unleveled gate structure
Semiconductor structures are provided. The semiconductor structure includes a fin structure formed over a substrate and a gate structure formed across the fin structure. In addition, the gate structure includes a gate dielectric layer formed over the substrate and a work function metal layer formed over a portion of the gate dielectric layer. The gate structure further includes a gate electrode layer formed over a portion of the work function metal layer. In addition, a top surface of the gate electrode layer is located at a position that is higher than that of a top surface of the gate dielectric layer, and the top surface of the gate dielectric layer is located at a position that is higher than that of a top surface of the work function layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chai-Wei Po-Chi Yi-Cheng Che-Cheng
Chang Wu Chao Chang