Haynes and Boone, LLP
Negative capacitance transistor having a multilayer ferroelectric structure or a ferroelectric layer with a gradient doping profile
A negative capacitance semiconductor device includes a substrate. A dielectric layer is disposed over a portion of the substrate. A ferroelectric structure is disposed over the dielectric layer. Within the ferroelectric structure: a material composition of the ferroelectric structure varies as a function of a height within the ferroelectric structure. A gate electrode is disposed over the ferroelectric structure.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chi-Hsing Chih-Yu Ching-Wei Kuan-Lun Sai-Hooi
Hsu Chang Tsai Cheng Yeong