Proskauer Rose LLP
In-situ pre-PECVD oxide deposition process for treating SOG
 An in situ inter-dielectric process is disclosed for forming multilevel metal structures. The process includes the steps of: PA1 (1) forming an SOG layer on an uneven semiconductor surface, PA1 (2) treating a surface of the SOG layer with a plasma in a PECVD chamber, and PA1 (3) forming a PECVD oxide layer on the treated surface in the same PECVD chamber. The operating parameters for performing the in situ treatment are as follows: ______________________________________ Gas: N.sub.2 O or C.sub.2 F.sub.6 Pressure: 4-6 Torr Temperature: 300-400.degree. C. Power: 200-400 Watts Gap: 300-800 mil Flow: 500-1500 sccm Time: 5-15 sec ______________________________________ Thus, the treatment can be performed in the same PECVD chamber used to form a PECVD oxide layer on the treated SOG layer. Furthermore, the SOG layer surface may be oxidized to produce an organic deficient SiO.sub.x layer at the surface of the SOG layer prior to performing the treatment step (2). 
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Yu-Chen Shing-Hsiang Chin-hao
Yang Hung Chou