Patterson + Sheridan, LLP
Zinc oxide-based mask for selective reactive ion etching
Embodiments herein describe techniques for forming a zinc oxide mask used when performing RIE. In one embodiment, the zinc oxide mask is near-amorphous which means the zinc oxide has a grain size that is less than 50 nanometers. In contrast, metal masks such as aluminum, chromium, and titanium have a less robustness to RIE process. When performing RIE, the edges of these RIE masks can form pits or holes which harm the features of the underlying substrate. However, a near-amorphous zinc oxide RIE mask is less susceptible to pitting, and thus, can improve the geometry of the etched features.
International Business Machines Corporation
H
H01L
inventional
Devendra K. Yun Seog Joel P.
Sadana Lee De Souza