Hutchins, Wheeler & Dittmar
Electron beam exposure mask and pattern designing method thereof
First, a mask pattern is defined to a plurality of lattice shaped regions of a uniform dimension. Then, the lattice shaped regions which are adjacent to each other are assigned to different complementary masks. In this manner, the shape of an opening through which electron beams pass is determined so that a displacement caused by a stress acting to each location in the complementary masks is less than a predetermined value.
NEC Corporation
H H G Y
H01J H01J G03F Y10S
additional additional inventional additional
Hiroshi Fumihiro
Yamashita Koba