Lee IP Law, PC
Semiconductor device
A semiconductor device includes a fin-type pattern on a substrate, the fin-type pattern extending in a first direction and protruding from the substrate in a third direction, a first wire pattern on the fin-type pattern, the first wire pattern being spaced apart from the fin-type pattern in the third direction, and a gate electrode extending in a second direction, which is perpendicular to the first and third directions, and surrounding the first wire pattern, the gate electrode including a first portion that overlaps with the fin-type pattern in the second direction and a second portion corresponding to a remainder of the gate electrode except for the first portion.
Samsung Electronics Co., Ltd.
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Yong Seung Min-Hee Moon Seung Seung Mo Eun Hye Jung Taek
Kim Choi Yang Kang Choi Kim