Tutunjian & Bitetto, P.C.
Vertical transport fin field effect transistor (VT FinFET) having an uniform L-shaped inner spacer
A method of forming a vertical transport fin field effect transistor (VT FinFET), including, forming a plurality of vertical fins on a substrate, forming a sacrificial liner on at least two of the plurality of vertical fins, forming sidewall spacers on the vertical surfaces of the sacrificial liner, wherein the sidewall spacers are on opposite sides of the at least two of the plurality of vertical fins, and removing a portion of the sacrificial liner to form an l-shaped channel adjacent to each of the at least two of the plurality of vertical fins.
International Business Machines Corporation
H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional additional inventional inventional inventional inventional inventional inventional inventional
Peng Kangguo Juntao Jingyun
Xu Cheng Li Zhang