Slater & Matsil, L.L.P.
Reducing resistance in source and drain regions of FinFETs
A semiconductor structure includes a semiconductor fin on a top surface of a substrate, wherein the semiconductor fin includes a middle section having a first width; and a first and a second end section connected to opposite ends of the middle section, wherein the first and the second end sections each comprises at least a top portion having a second width greater than the first width. The semiconductor structure further includes a gate dielectric layer on a top surface and sidewalls of the middle section of the semiconductor fin; and a gate electrode on the gate dielectric layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Yu-Rung Cheng-Hung Chen-Nan Chen-Hua
Hsu Chang Yeh Yu