Vierra Magen Marcus LLP
Protective structure to prevent short circuits in a three-dimensional memory device
In a three-dimensional stacked non-volatile memory device, a short circuit is prevented in a select gate layer by providing a protective material such as a diode, capacitor, linear resistor or varistor between select gate lines and a remaining portion of the select gate layer. Charges which are accumulated in the select gate lines due to plasma etching are therefore prevented from discharging through the remaining portion in a short circuit path when the select gate lines are driven. The protective material can comprise a p-n diode, an n-i-n or p-i-p resistor, a thin oxide layer between doped polysilicon layers in a capacitor, or a variable-resistance material such as ZnO2 between oxide layers in a varistor.
SanDisk Technologies Inc.
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Yingda Wei Jiahui Jayavel
Dong Zhao Yuan Pachamuthu