Harrity & Harrity, LLP
Ultraviolet radiation blocking interlayer dielectric
A memory device may include a substrate, a first dielectric layer formed over the substrate and a charge storage element formed over the first dielectric layer. The memory device may also include a second dielectric layer formed over the charge storage element and a control gate formed over the second dielectric layer. The memory device may further include an interlayer dielectric formed over the control gate and the substrate, where the interlayer dielectric includes a material that is substantially opaque to ultraviolet radiation.
Spansion LLC Advanced Micro Devices, Inc.
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Angela Ning Minh Van Cinti Xiaohua Jeffrey A. Wenmei
Hui Cheng Ngo Chen Shields Li