Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Film-forming manufacturing apparatus and method
It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters.
NuFlare Technology, Inc. Toyota Jidosha Kabushiki Kaisha
C C C C C C C
C23C C23C C30B C23C C23C C23C C23C
inventional inventional inventional inventional inventional inventional inventional
Hideki Isaho Kunihiko Hidekazu Ayumu Hiroaki Masami Masahiko Toshiro Koichi
Ito Kamata Suzuki Tsuchida Adachi Fujibayashi Naito Ito Tsumori Nishikawa