Thompson Hine LLP
Reliable non-volatile memory device
Device and method for forming a device are disclosed. The method includes providing a substrate prepared with a memory cell region having a pair of non-volatile memory cells with a split gate. A split gate includes first and second gates. The first gate is an access gate and the second gate is a storage gate with a control gate over a floating gate. A common second S/D region is disposed adjacent to second gates of the first and second memory cells and first S/D regions are disposed adjacent to the first gates of the first and second memory cells. An erase gate is disposed over the common second S/D region. The erase gate is isolated by the second S/D and second gates by dielectric layers. A silicide block is disposed over the memory cell pair, covering the erase gate at least portions of the second gates of the memory cells.
GLOBALFOUNDRIES SINGAPORE PTE. LTD.
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Lai Qiang Eugene Fan Zhiqiang Jin Qiu Fangxin Xin Shu
Luo Kong Zhang Teo Liu Deng Cai