Ingrassia Fisher & Lorenz, P.C.
Silicon-on-insulator integrated circuits with local oxidation of silicon and methods for fabricating the same
Silicon-on-insulator integrated circuits with local oxidation of silicon and methods for fabricating the same are provided. An integrated circuit includes a semiconductor substrate and a plurality of shallow trench isolation (STI) regions, each extending at least a first depth below an upper surface of the semiconductor substrate. The STI regions electrically isolate devices fabricated in the semiconductor substrate. The integrated circuit further includes a transistor that includes source and drain regions located in the semiconductor substrate, a gate dielectric layer located between the source and drain regions, and a local oxide layer located in a second portion of the semiconductor substrate and extending a second depth below the upper surface of the semiconductor substrate. The first depth is greater than the second depth. Still further, the integrated circuit includes a first gate electrode that extends over the gate dielectric layer and the local oxide layer.
GLOBALFOUNDRIES Singapore Pte. Ltd.
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Guan Huei Wenli Purakh Raj Youzhou Shaoqiang
See Liu Verma Hu Zhang