Techniques for contact formation in self-aligned replacement gate device
A method may include providing a device structure, where the device structure includes a semiconductor region, and a gate structure, disposed over the semiconductor region. The gate structure may further include a gate metal. The method may further include oxidizing an upper portion of the gate metal, wherein the upper portion forms an oxide cap, and wherein a lower portion of the gate metal remains metallic.
Varian Semiconductor Equipment Associates, Inc.
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Sony Jun Min Gyu Wenhui
Varghese Lee Sung Wang