Slater Matsil, LLP
High boiling temperature solvent additives for semiconductor processing
A method for forming an interconnect structure includes forming a patterned layer over a substrate, the patterned layer having an opening therein. A dielectric material is filled in the opening. The dielectric material has a precursor and a solvent, the solvent having a boiling point temperature greater than a precursor cross-linking temperature. A thermal treatment is performed on the dielectric material to form a dielectric layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01B H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional additional inventional inventional inventional additional inventional inventional inventional inventional additional
Tien-I Ching-Yu Bo-Jiun Hai-Ching
Bao Chang Lin Chen