The Marbury Law Group PLLC
Three-dimensional memory device containing plural work function word lines and methods of forming the same
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through the alternating stack, and memory stack structures extending through the alternating stack. Each of the memory stack structures contains a memory film and a vertical semiconductor channel. At least one of the electrically conductive layers contains a first conductive material portion having a respective inner sidewall that contacts a respective one of the memory films at a vertical interface, and a second conductive material portion that has a different composition from the first conductive material portion, and contacting the first electrically conductive material portion. The first conductive material portion has a lower work function than the second conductive material portion.
SANDISK TECHNOLOGIES LLC
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Wei Ashish Peng Dong-il Yanli Raghuveer S.
Zhao Baraskar Zhang Moon Zhang Makala