Goodwin Procter LLP
Method of forming GE photodetectors
A photodetector device includes a plurality of Ge epilayers that are grown on a substrate and annealed in a defined temperature range. The Ge epilayers form a tensile strained Ge layer that allows the photodetector device to operate efficiently in the C-band and L-band.
Massachusetts Institute of Technology
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Yasuhiko Kazumi Douglas D. Lionel C. Jifeng
Ishikawa Wada Cannon Kimerling Liu