Brinks Hofer Gilson & Lione
Focused ion beam apparatus and sample section forming and thin-piece sample preparing methods
Detected is a secondary electron generated by irradiating a focused ion beam while performing etching a sample section and the around through scan-irradiating the focused ion beam. From a changing amount of the detected secondary electron signal an end-point detecting mechanism detects an end point to thereby terminate the etching, so that a center position of a defect or a contact hole is effectively detected even with an FIB apparatus not having a SEM observation function.
SII NanoTechnology Inc.
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Junichi Yutaka Toshiaki
Tashiro Ikku Fujii