Slater & Matsil, L.L.P.
Germanium FinFETs with metal gates and stressors
An integrated circuit structure includes an n-type fin field effect transistor (FinFET) and a p-type FinFET. The n-type FinFET includes a first germanium fin over a substrate; a first gate dielectric on a top surface and sidewalls of the first germanium fin; and a first gate electrode on the first gate dielectric. The p-type FinFET includes a second germanium fin over the substrate; a second gate dielectric on a top surface and sidewalls of the second germanium fin; and a second gate electrode on the second gate dielectric. The first gate electrode and the second gate electrode are formed of a same material having a work function close to an intrinsic energy level of germanium.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Clement Hsingjen Chih-Sheng Chih Chieh
Wann Chang Yeh