Method for manufacturing a CMOS device having dual metal gate
A method for manufacturing a CMOS device having dual metal gate includes providing a substrate having at least two transistors of different conductive types and a dielectric layer covering the two transistors, planarizing the dielectric layer to expose gate conductive layers of the two transistors, forming a patterned blocking layer exposing one of the conductive type transistor, performing a first etching process to remove a portion of a gate of the conductive type transistor, reforming a metal gate, removing the patterned blocking layer, performing a second etching process to remove a portion of a gate of the other conductive type transistor, and reforming a metal gate.
United Microelectronics Corp.
H H H H H H
H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional additional
Tian-Fu Che-Hua Cheng-Hsien Li-Wei Guang-Hwa Chien-Ting Chih-Hao
Chiang Hsu Chou Cheng Ma Lin Yu