Haynes and Boone, LLP
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices
A fabrication process for an STT MTJ MRAM device includes steps of cooling the device at individual or at multiple stages in its fabrication. The cooling process, which may be equally well applied during the fabrication of other multi-layered devices, is demonstrated to produce an operational device that is more resistant to adverse thermal effects during operation that would normally cause a similar device not so fabricated to lose stored data and otherwise fail to operate properly.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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inventional additional additional additional inventional
Jodi Mari Ru-Ying Jian Vignesh Yuan-Jen Sahil Guenole Huanlong
Iwata Tong Zhu Sundar Lee Patel Jan Liu