Method for forming a bottom spin valve magnetoresistive sensor element
A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.
Headway Technologies, Inc.
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Simon H. Kiyoshi Kochan Cheng T. Masashi Min
Liao Noguchi Ju Horng Sano Li