IP & T Group LLP
Semiconductor device and method for fabricating the same including re-growth process to form non-uniform gate dielectric layer
A method for fabricating a semiconductor device includes: forming a gate structure including a source side and a drain side over a substrate, wherein a dielectric material and a columnar crystal grain material are stacked over the substrate; doping a chemical species on the drain side of the gate structure; and exposing the gate structure doped with the chemical species to a re-growth process in order to thicken the dielectric material on the drain side of the gate structure.
SK hynix Inc.
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Seon-Haeng
Lee