Eschweiler & Potashnik, LLC
Extra doped region for back-side deep trench isolation
The present disclosure relates to a CMOS image sensor having a doped region, arranged between deep trench isolation structures and an image sensing element, and an associated method of formation. In some embodiments, the CMOS image sensor has a pixel region disposed within a semiconductor substrate. The pixel region has an image sensing element configured to convert radiation into an electric signal. A plurality of back-side deep trench isolation (BDTI) structures extend into the semiconductor substrate on opposing sides of the pixel region. A doped region is laterally arranged between the BDTI structures and separates the image sensing element from the BDTI structures and the back-side of the semiconductor substrate. Separating the image sensing element from the BDTI structures prevents the image sensing element from interacting with interface defects near edges of the BDTI structures, and thereby reduces dark current and white pixel number.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H H H H H H
H01L H01L H01L H01L H01L H01L H01L
inventional additional additional inventional inventional inventional additional
Tzu-Jui Dun-Nian Yen-Ting Shyh-Fann Ching-Chun Hsiao-Hui Yuichiro Chun-Yuan Jhy-Jyi Yu-Jen
Wang Yaung Chiang Ting Wang Tseng Yamashita Chen Sze Wang