Sterne, Kessler, Goldstein & Fox P.L.L.C.
Image sensor with improved quantum efficiency surface structure
The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Hsun-Ying Yun-Wei Shih-Hsun Kuo-Cheng Chun-Hao
Huang Cheng Hsu Lee Chou