Epitaxial Process of forming stress inducing epitaxial layers in source and drain regions of PMOS and NMOS structures
An epitaxial process includes the following steps. A first gate and a second gate are formed on a substrate. Two first spacers are formed on the substrate beside the first gate and the second gate respectively. Two first epitaxial layers having first profiles are formed in the substrate beside the two first spacers respectively. A second spacer material is formed to cover the first gate and the second gate. The second spacer material covering the second gate is etched to form a second spacer on the substrate beside the second gate and expose the first epitaxial layer beside the second spacer while reserving the second spacer material covering the first gate. The exposed first epitaxial layer in the substrate beside the second spacer is replaced by a second epitaxial layer having a second profile different from the first profile.
United Microelectronics Corp.
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Cheng-Guo Ssu-I Chung-Fu Chien-Ting Yu-Hsiang
Chen Fu Chang Lin Hung