Lee & Morse, P.C.
Semiconductor device having a gate contact structure capable of reducing interfacial resistance
A semiconductor device has a gate contact structure, including a semiconductor substrate, a polycrystalline silicon layer used as a gate electrode of a transistor, a middle conductive layer, a top metal layer having an opening exposing the polycrystalline silicon layer, and a contact plug directly contacting the polycrystalline silicon layer through the opening.
Samsung Electronics Co., Ltd.
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Ju-Hyung Yoo-Cheol Jong-Sun Sang-Hun Jung-Dal Chang-Seok
Kim Shin Sel Jeon Choi Kang