WPAT, PC
Method for manufacturing semiconductor device
The invention is directed to a method for manufacturing a semiconductor. The method comprises steps of providing a substrate having a gate structure formed thereon and forming a source/drain extension region in the substrate adjacent to the gate structure. A spacer is formed on the sidewall of the gate structure and a source/drain region is formed in the substrate adjacent to the spacer but away from the gate structure. A bevel carbon implantation process is performed to implant a plurality carbon atoms into the substrate and a metal silicide layer is formed on the gate structure and the source/drain region.
United Microelectronics Corp.
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Tzyy-Ming Li-Shian Shyh-Fann Kun-Hsien Cheng-Tung Wen-Han
Cheng Jeng Ting Lee Huang Hung