Green, Howard & Mughal LLP
Nanoribbon structures with recessed source-drain epitaxy
Nanoribbon Field Effect Transistors (FETs) offer significant performance increases and energy consumption decreases relative to traditional metal oxide semiconductor (MOS) transistors. Various embodiments are directed to nanoribbon FETs having III-N channel materials and methods of forming the same. An integrated circuit (IC) structure can include a first layer on a substrate. The first layer can include a group III semiconductor material and nitrogen. The IC structure can include recessed source and drain regions formed on the first layer using planar epitaxy. The IC structure can include a second layer between the recessed source and drain. A gate wraps around at least part of the second layer.
Intel Corporation
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Marko Sansaptak Han Wui
Radosavljevic Dasgupta Then