Jones Day
Memory, semiconductor device including the same, and method for testing the same
A memory includes a first memory cell, a second memory cell, a latch unit, and a switch unit. The latch unit has a true node and a complement node. The switch unit is responsive to a first control signal and a second control signal, and is configured to connect the first memory cell to the true node and to disconnect the second memory cell from the complement node in response to the first control signal and to connect the second memory cell to the complement node and to disconnect the first memory cell from the true node in response to the second control signal. A semiconductor device that includes the memory is also disclosed. A method for testing the memory is also disclosed.
Taiwan Semiconductor Manufacturing Company Limited
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Cheng-Hsiung Chung-Chieh Gu-Huan Jih-Chen
Kuo Chen Li Wang