Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Non-volatile semiconductor storage device and method of manufacturing the same
A non-volatile semiconductor storage device has a memory string including a plurality of electrically rewritable memory cells connected in series. The non-volatile semiconductor storage device also has a protruding layer formed to protrude upward with respect to a substrate. The memory string includes: a plurality of first conductive layers laminated on the substrate; a first semiconductor layer formed to penetrate the plurality of first conductive layers; and an electric charge storage layer formed between the first conductive layers and the first semiconductor layer, and configured to be able to store electric charges. Each of the plurality of first conductive layers includes: a bottom portion extending in parallel to the substrate; and a side portion extending upward with respect to the substrate along the protruding layer at the bottom portion. The protruding layer has a width in a first direction parallel to the substrate that is less than or equal to its length in a lamination direction.
Kabushiki Kaisha Toshiba
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inventional inventional inventional
Hiroyasu Akihiro Hideaki Masaru Hitoshi Yoshiaki Megumi Ryota Yosuke Masaru Yasuyuki
Tanaka Nitayama Aochi Kidoh Ito Fukuzumi Ishiduki Katsumata Komori Kito Matsuoka