Anova Law Group, PLLC
Semiconductor structure and fabrication method thereof
A method is provided for fabricating a semiconductor structure. The method includes providing a bottom substrate having a first region and a second region, and forming a trench in the first region by patterning the bottom substrate. The method also includes forming an insulation layer in the trench in the first region, wherein the insulation layer exposes part of side surface of the trench, and forming a top substrate on the exposed side surface of the trench and the insulation layer. Further, the method includes forming a first fin portion in the first region, and forming a gate structure crossing the first fin portion, wherein the gate structure covers part of side and top surfaces of the first fin portion.
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
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Ji Quan Chun Lei
Liu Gong