Matthias Scholl P.C.
Method of eliminating surface stress of silicon wafer
This invention provides a method for eliminating the surface stress of a silicon wafer comprising forming one or more anti-stress groove(s) on the surface of the silicon wafer. These anti-stress grooves can reduce or eliminate the surface stress of silicon wafer effectively to avoid the formation of slip lines and dislocation arrangements, which may induce the p-n junction to conduct or the leakage current to increase. The process is highly efficient and low in cost. It is simple to manage and does not require additional equipment beyond that already used for processing of silicon wafers.
B H
B28D H01L
inventional inventional
Yanyan Yongchao Weiwei Na Yuling Jianxin
Huang Bian Li Liu Liu Zhang