Cantor Colburn LLP
Transistor having stacked source/drain regions with formation assistance regions and multi-region wrap-around source/drain contacts
Embodiments of the invention are directed to a method of performing fabrication operations to form a transistor, wherein the fabrication operations include forming a source or drain (S/D) region having stacked, spaced-apart, and doped S/D layers. The fabrication operations further include forming a multi-region S/D contact structure configured to contact a top surface, a bottom surface, and sidewalls of each of the stacked, spaced-apart, and doped S/D layers.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Juntao Chanro Reinaldo Kangguo Ruilong
Li Park Vega Cheng Xie