Slater Matsil, LLP
Doping for FinFET
First and second fins are formed extending from a substrate. A first layer is formed over the first fin. The first layer comprises a first dopant. A portion of the first layer is removed from a tip portion of the first fin. A second layer is formed over the second fin. The second layer comprises a second dopant. One of the first and second dopants is a p-type dopant, and the other of the first and second dopants is an n-type dopant. A portion of the second layer is removed from a tip portion of the second fin. A solid phase diffusion process is performed to diffuse the first dopant into a non-tip portion of the first fin, and to diffuse the second dopant into a non-tip portion of the second fin.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Han-Pin Hung-Kai Chun-Fu Kuang-Yuan Chien-Tai Ka-Hing Tsung-Hung Hsien-Chin Shih-Syuan
Chung Chen Cheng Hsu Chan Fung Lee Lin Huang