Vierra Magen Marcus LLP
Apparatus and methods for magnetic memory devices with magnetic assist layer
An apparatus is provided that includes a magnetic tunnel junction, a magnetic assist layer coupled to the magnetic tunnel junction, a non-magnetic layer disposed between the free layer and the magnetic assist layer, and a spin Hall effect layer coupled to the magnetic assist layer. The magnetic tunnel junction includes a free layer in a plane, the free layer including a switchable magnetization direction perpendicular to the plane. The magnetic assist layer includes a magnetization direction parallel to the plane and free to rotate about an axis perpendicular to the plane.
Western Digital Technologies, Inc.
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Xiaoyong Zhanjie Zhigang Michael Yongchul Hongquan Quang Thao A.
Liu Li Bai Ho Ahn Jiang Le Nguyen