Duane Morris LLP
Method of forming silicided gate structure
A method of forming a silicided gate of a field effect transistor on a substrate having active regions is provided. The method includes the following steps: (a) forming a silicide in at least a first portion of a gate; (b) after step (a), depositing a metal over the active regions and said gate; and (c) annealing to cause the metal to react to form silicide in the active regions, wherein the thickness of said gate silicide is greater than the thickness of said silicide in said active regions.
Taiwan Semiconductor Manufacturing Co., Ltd.
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inventional inventional additional inventional inventional
Chii-Ming Chih-Wei Mei-Yun Shau-Lin Cheng-Tung
Wu Chang Wang Shue Lin