Schwabe, Williamson & Wyatt, P.C.
Group III-V semiconductor fuses and their methods of fabrication
Group III-V semiconductor fuses and their methods of fabrication are described. In an example, a fuse includes a gallium nitride layer on a substrate. An oxide layer is disposed in a trench in the gallium nitride layer. A first contact is on the gallium nitride layer on a first side of the trench, the first contact comprising indium, gallium and nitrogen. A second contact is on the gallium nitride layer on a second side of the trench, the second side opposite the first side, the second contact comprising indium, gallium and nitrogen. A filament is over the oxide layer in the trench, the filament coupled to the first contact and to the second contact wherein the filament comprises indium, gallium and nitrogen.
Intel Corporation
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Rajat K. Tristan A. Han Wui Marko Sansaptak
Paul Tronic Then Radosavljevic Dasgupta