NSIP Law
Composition for preparing silicon carbide ingot and method for preparing silicon carbide ingot using the same
A method for preparing a SiC ingot includes loading a composition of a raw material comprising a carbon source and a silicon source into a reactor; placing a plurality of seed crystal on one side of the reactor spaced apart from the composition; and sublimating the composition such that the SiC ingot grows from the plurality of seed crystal. A flow factor of the composition may be 5 to 35.
SKC Co., Ltd.
C C C C H C C
C30B C30B C30B C30B H01L C30B C30B
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Sang Ki Jongmin Kap-Ryeol Myung-Ok Jung-Gyu Byung Kyu Jong Hwi Jung Woo
Ko Shim Ku Kyun Kim Jang Park Choi