Flash memory including reduced swing amplifiers
For realizing low power and high speed flash memory, reduced swing amplifiers are used for reading, such that a first reduced swing amplifier serves as a local sense amp for reading a memory cell through a short local bit line, a second reduced swing amplifier serves as a segment sense amp for reading the local sense amp, and a third reduced swing amplifier serves as a global sense amp for reading the segment sense amp through a global bit line. When reading data, a voltage difference in the local bit line is converted to a time difference by the sense amps for differentiating low data and high data, which realizes low power consumption with the reduced swing amplifiers. And, short local bit line is quickly discharged when reading, which realizes fast operation. Additionally, alternative circuits and memory cell structures for implementing the memory are included.
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Juhan
Kim