Lowe Hauptman Ham & Berner LLP
NMOS device, PMOS device, and SiGe HBT device formed on SOI substrate and method of fabricating the same
Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.
Electronics and Telecommunications Research Institute
H H H
H01L H01L H01L
inventional inventional inventional
Kyoung Ik Jin Yeong Seung Yun
Cho Kang Lee