F. Chau & Associates, LLC
Semiconductor device
A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.
SAMSUNG ELECTRONICS CO., LTD.
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Sungmoon Sangmin Bongseok Euichul Jooho Juyoun Hyungjoo
Lee Yoo Suh Hwang Jung Kim Na