Slater Matsil, LLP
Semiconductor device and method of manufacture
A semiconductor device and method of manufacture are provided in which a passivation layer is patterned. In embodiments, by-products from the patterning process are removed using the same etching chamber and at the same time as the removal of a photoresist utilized in the patterning process. Such processes may be used during the manufacturing of FinFET devices.
Taiwan Semiconductor Manufacturing Company, Ltd.
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additional inventional additional additional additional inventional additional additional inventional additional inventional additional inventional additional inventional additional inventional additional inventional inventional additional additional additional inventional additional additional inventional additional additional inventional inventional
Yu-Cheng Che-Cheng Horng-Huei Wen-Tung Hung-Hao
Liu Chang Tseng Chen Chen