Leydig, Voit & Mayer, Ltd.
Nitride semiconductor light-emitting device
A nitride semiconductor light-emitting device includes a p-type contact layer, a p-type intermediate layer below the p-type contact layer, and a p-type cladding layer below the p-type intermediate layer. Band gap energy differences between the p-type contact layer and the p-type intermediate layer and also between the p-type intermediate layer and the p-type cladding layer are, respectively, 200 meV or below.
Mitsubishi Electric Corporation
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Akihito Kyosuke
Ohno Kuramoto