Sughrue Mion, PLLC
Semiconductor devices having vertical transistors with aligned gate electrodes
A semiconductor device includes an active pillar on a substrate. A first source/drain region is disposed at a top end of the active pillar and has a greater width than the active pillar. A first insulating layer is disposed on a sidewall of the active pillar and a second insulating layer is disposed on at least a bottom surface of the first source/drain region. A gate electrode is disposed on the first insulating layer and the second insulating layer. A second source/drain region is disposed in the substrate at a bottom end of the active pillar. Methods of fabrication are also described.
SAMSUNG ELECTRONICS CO., LTD.
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Mirco Changhee Sungil Yunil Donghun Junggun
Cantoro Kim Park Lee Lee You