Cantor Colburn LLP
Surface passivation having reduced interface defect density
Embodiments are directed to a method of passivating a surface of a high-mobility semiconductor and resulting structures having a reduced interface defect density. A semiconductor layer is formed on a substrate. A surface of the semiconductor layer is contacted with a sulfur source including thiourea at a temperature of up to about 90 degrees Celsius to form a sulfur passivation layer on the surface of the semiconductor layer. A dielectric layer is formed on the sulfur passivation layer and a minimum of interface trap density distribution at an interface between the semiconductor layer and the dielectric layer is less than about 2.0×1011 cm−2 eV−1.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Devendra K. Kunal Yun Seog Joel P.
Sadana Mukherjee Lee de Souza