Renner, Otto, Boisselle & Sklar, LLP
Method of detecting the circular uniformity of the semiconductor circular contact holes
A method of detecting the circular uniformity of semiconductor circular contact holes. Several detection circuit structures are disposed on the semiconductor wafer: N-type active regions and P-type active regions; silicon dioxide layers separate the N-type active regions from the P-type active regions; the N-type active regions are formed in the P well and the P-type active regions are formed in the N well; polysilicon gates bridge the N-type active regions and the P-type active regions; gate oxide layers insulate the P-type regions and the N-type regions from the polysilicon gates, so that the P-type regions and the N-type regions are independent; the N-type active regions connect with circular contact holes while the P-type active regions and the polysilicon gates connect with oval contact holes; a electron beam scanner detects the circular uniformity of the contact holes. This invention advantageously reflects effectively and comprehensively the circular uniformity of the contact holes.
Shanghai Huali Microelectronics Corporation
H Y H Y
H01L Y10S H01L Y10S
additional additional inventional additional
Yin Kai HungLin Qiliang MingShen
Long Wang Chen Ni Kuo