Scully Scott Murphy and Presser
Pattern factor dependency alleviation for eDRAM and logic devices with disposable fill to ease deep trench integration with fins
Dummy deep trenches can be formed within a logic device region in which logic devices are to be formed while deep trench capacitors are formed within a memory device region. Semiconductor fins are formed over a top surface prior to forming trenches, and disposable material is filled around said semiconductor fins. A top surface of said disposable filler material layer can be coplanar with a top surface of said semiconductor fins, which eases deep trench formation. Conductive material portions of the dummy deep trenches can be recessed to avoid electrical contact with semiconductor fins within the logic device region, while an inner electrode of each deep trench can contact a semiconductor fin within the memory device region. A dielectric material portion can be formed above each conductive material portion of a dummy deep trench.
GLOBALFOUNDRIES INC.
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Juntao Geng Kangguo Joseph Chengwen
Li Wang Cheng Ervin Pei