Method for fabricating semiconductor device
A method for fabricating semiconductor device includes the steps of: forming a shallow trench isolation (STI) in the substrate; removing part of the STI to form a trench in a substrate; forming an amorphous silicon layer in the trench and on the STI; performing an oxidation process to transform the amorphous silicon layer into a silicon dioxide layer; and forming a barrier layer and a conductive layer in the trench.
UNITED MICROELECTRONICS CORP. Fujian Jinhua Integrated Circuit Co., Ltd.
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Po-Chun Chia-Lung Han-Yung Yi-Wei Wei-Hsin
Chen Chang Tsai Chen Liu