Jianq Chyun IP Office
TFT structure and pixel structure
A pixel structure including a substrate, a gate, an insulation layer, a metal oxide semiconductor (MOS) layer, a source and a drain, at least one film layer, and a first electrode layer is provided. The gate is disposed on the substrate. The insulation layer covers the gate. The MOS layer is disposed on the insulation layer above the gate. The source and the drain are disposed on the MOS layer. The film layer covers the MOS layer and includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks ultraviolet light from reaching the MOS layer. The first electrode layer is electrically connected to the source or the drain.
Au Optronics Corporation
H H
H01L H01L
inventional inventional
Tsung-Hsiang Cheng-Wei Hsueh-Hsing Chia-Yu Hung-Che
Shih Chou Lu Chen Ting