Trop, Pruner & Hu, P.C.
Selective epitaxially grown III-V materials based devices
An embodiment includes a III-V material based device, comprising: a first III-V material based buffer layer on a silicon substrate; a second III-V material based buffer layer on the first III-V material based buffer layer, the second III-V material including aluminum; and a III-V material based device channel layer on the second III-V material based buffer layer. Another embodiment includes the above subject matter and the first and second III-V material based buffer layers each have a lattice parameter equal to the III-V material based device channel layer. Other embodiments are included herein.
Intel Corporation
H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Benjamin Matthew V. Gilbert Jack T. Marko Willy Robert S. Ravi Han Wui
Chu-Kung Metz Dewey Kavalieros Radosavljevic Rachmady Chau Pillarisetty Then