Haynes and Boone, LLP
Priming material for organometallic resist
Semiconductor systems and methods are provided. In an embodiment, a method of film formation includes receiving a substrate, dispensing a priming material on the substrate, and applying an organometallic resist solution over the priming material on the substrate, thereby forming an organometallic resist layer over the priming material. The priming material includes water.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Ching-Yu An-Ren Chun-Chih
Chang Zi Ho