Schwabe, Williamson & Wyatt, P.C.
Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitances
Embodiments of the invention include a microelectronic device that includes a substrate, at least one dielectric layer on the substrate and a plurality of conductive lines within the at least one dielectric layer. The microelectronic device also includes an air gap structure that is located below two or more of the plurality of conductive lines.
Intel Corporation
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Han Wui Marko Sansaptak Sanaz K.
Then Radosavljevic Dasgupta Gardner