Burns, Doane, Swecker & Mathis, L.L.P.
Amidoalane precursors for chemical vapor deposition of aluminum
 This invention provides volatile, intramolecularly coordinated amido/amine alane complexes, H.sub.2 Al{(R.sup.1)(R.sup.2)NC.sub.2 H.sub.4 NR.sup.3 }, wherein R.sup.1, R.sup.2 and R.sup.3 are each independently H or C.sub.1 -C.sub.3 alkyl. These aluminum complexes show extremely high thermal stability and deposit high-quality aluminum films at low temperatures. They are capable of selectively depositing aluminum films on metallic or other electrically conductive substrates with wide process window. 
C
C07F
inventional
Hyungsoo
Choi