Slater & Matsil, L.L.P.
Embedded SiGe stressor with tensile strain for NMOS current enhancement
MOS devices having localized stressors are provided. Embodiments of the invention comprise a gate electrode formed over a substrate and source/drain regions formed on either side of the gate electrode. The source/drain regions include an embedded stressor and a capping layer on the embedded stressor. Preferably, the embedded stressor has a lattice spacing greater than the substrate lattice spacing. In a preferred embodiment, the substrate is silicon and the embedded stressor is silicon germanium. A method of manufacturing is also provided, wherein strained PMOS and NMOS transistors may be formed simultaneously.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chih-Chien Tze-Liang Li-Te S.
Chang Lee Lin