WPAT, P.C., Intellectual Property Attorneys
Semiconductor device structure and manufacturing method thereof
Some embodiments of the present disclosure provide a method of manufacturing a semiconductor device including receiving a FinFET precursor including a fin structure formed between isolation regions, and a gate structure formed over a portion of the fin structure such that a sidewall of the fin structure is in contact with a gate spacer of the gate structure; patterning the fin structure to comprise a pattern of at least one upward step rising from the isolation region; forming a capping layer over the fin structure, the isolation region, and the gate structure; performing an annealing process on the FinFET precursor to form at least two dislocations along the upward step; and removing the capping layer.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Fu-Tsun I-Chih Chih-Mu Chih-Ming Yung-Fa
Tsai Chen Huang Hsieh Lee