Westerman, Hattori, Daniels & Adrian, LLP
Semiconductor device and manufacturing method thereof
An IrOx film of a thickness of 50 nm is formed on a PZT film by a sputtering method. The value of x is less than 2. Namely, an unsaturated iridium oxide film is formed. By performing RTA, the PZT film is completely crystallized. Thereafter, an IrOY film of a thickness of 50 nm to 100 nm is formed on the IrOX film by a sputtering method. The composition of IrOY is made a composition closer to the stoichiometric composition of IrO2 than the composition of IrOX (X<Y≦2). This is because by adopting such a composition, the catalytic action to hydrogen is suppressed, the problem of the PZT film being reduced by hydrogen radicals is suppressed and hydrogen endurance of the ferroelectric capacitor is enhanced. An SrXRuYO3 film in an amorphous state with a thickness of about 20 nm is formed on IrOY film by a sputtering method.
Fujitsu Semiconductor Limited
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inventional additional inventional
Wensheng
Wang