Nixon & Vanderhye P.C.
Semiconductor device
A flexible area 2 is joined at one end via a thermal insulation area 7 to a semiconductor substrate 3 which becomes a frame and at an opposite end to a moving element 5. The thermal insulation area 7 is made of a thermal insulation material a resin such as polyimide or a fluoridated resin. The flexible area 2 is made up of a thin portion 2S and a thin film 2M different in thermal expansion coefficient. When a diffused resistor 6 formed on the surface of the thin portion 2S is heated, the flexible area 2 is displaced because of the thermal expansion difference between the thin portion 2S and the thin film 2M, and the moving element 5 is displayed with respect to the semiconductor substrate 3. 
Matsushita Electric Works, Ltd.
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Masaaki Hiroshi Jun Masanao Hitoshi Kazuhiro Shigeaki Shuichi
Saito Kawada Ogihara Kamakura Yoshida Nobutoki Tomonari Nagao