Ryan, Mason & Lewis, LLP
Isolation structure for stacked vertical transistors
A method for manufacturing a semiconductor device includes forming a first vertical transistor on a semiconductor substrate, and forming a second vertical transistor stacked on the first vertical transistor. In the method, an isolation layer is formed between the first and second vertical transistors. The isolation layer includes a rare earth oxide.
International Business Machines Corporation
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Juntao Zhenxing Chen Kangguo
Li Bi Zhang Cheng