Scully, Scott, Murphy & Presser, P.C.
Y-FET with self-aligned punch-through-stop (PTS) doping
A semiconductor structure is provided that includes at least one punch-through stop base structure having concave outermost sidewalls and located on a semiconductor surface of a semiconductor substrate. The structure further includes a pair of semiconductor fins extending upwards from a topmost surface of the at least one punch through stop base structure. The structure even further includes a trench isolation structure located laterally adjacent each of the concave outermost sidewalls of the at least one punch-through stop base structure, wherein a dopant source dielectric material liner is located on each of the concave outermost sidewalls of the at least one punch-through stop base structure and is present between the at least one punch-through stop base structure and the trench isolation structure.
International Business Machines Corporation
H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Ramachandra Juntao Kangguo
Divakaruni Li Cheng