Hauptman Ham, LLP
Method of forming capacitor structure
A method of forming a capacitor structure includes forming a first set of electrodes having a first electrode and a second electrode, wherein each electrode of the first set of electrodes has an L-shaped portion. The method further includes forming a second set of electrodes having a third electrode and a fourth electrode, wherein each electrode of the second set of electrodes has an L-shaped portion. The method further includes forming insulation layers between the first set of electrodes and the second set of electrodes. The method further includes forming a first L-shaped line plug connecting the first electrode to the third electrode, wherein an entirety of an outer surface of the first L-shaped line plug is recessed with respect to an outer surface of the L-shaped portion of the first electrode. The method further includes forming a second line plug connecting the second electrode to the fourth electrode.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
H H Y H H
H01G H01L Y10T H01L H01L
inventional inventional additional additional inventional
Wei-Chun Chung-Long Chih-Ping Hua-Chou Chun-Hung Jye-Yen
Hua Chang Chao Tseng Chen Cheng