Westerman, Hattori, Daniels & Adrian, LLP
Semiconductor device manufacturing method
In a semiconductor device manufacturing method having the etching step of an electrode material film constituting a capacitor using ferroelectric substance or high- dielectric substance, etching of a conductive film that acts as an electrode of the capacitor formed over a semiconductor substrate is carried out in an atmosphere containing bromine, and a heating temperature of the semiconductor substrate is set in a range of 300° C. to 600° C., otherwise etching of at least the conductive film is carried out in an atmosphere to which only hydrogen bromide and oxygen are supplied from an outside.
ULVAC, Inc. Fujitsu Semiconductor Limited
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H01L H01L H01L H01L C23F H01L
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Mitsuhiro Naoki Hideaki Genichi
Endo Hirai Kikuchi Komuro