High density MNOS transistor with ion implant into nitride layer adjacent gate electrode
 High density, simplified fabrication and the elimination of sidewalk leakage effects are achieved by the implementation of a self-aligned ion-implantation step during the fabrication of the MNOS transistor wherein, after the formation of the gate electrode of the transistor, low energy ions are implanted within the nitride layer of the MNOS transistor in the regions of the nitride layer adjacent to the gate electrode. 
McDonnell Douglas Corporation
H H
H01L H01L
inventional inventional
Yung J. Rick K.
Chen Hodgman