Holtz, Holtz & Volek PC
Method of operation of non-volatile memory device
According to one embodiment, a memory device includes a first memory cell; a second memory cell; a first bit line connected to the first memory cell; a second bit line connected to the second memory cell; a first word line connected to the first memory cell and the second memory cell; a first circuit configured to control a connection between the first bit line and a first node; and a second circuit configured to control a connection between the second bit line and the first node.
TOSHIBA MEMORY CORPORATION
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inventional inventional inventional
Takeshi Koji Tsukasa Tomonori
Nakano Kato Kobayashi Kurosawa