Mills & Onello, LLP
Inter-metal dielectric patterns and method of forming the same
Provided are an inter-metal dielectric pattern and a method of forming the same. The pattern includes a lower interconnection disposed on a semiconductor substrate, a lower dielectric layer having a via hole exposing the lower interconnection and covering the semiconductor substrate where the lower interconnection is disposed, and an upper dielectric pattern and a lower capping pattern, which include a trench line exposing the via hole and sequentially stacked on the lower dielectric layer. The lower dielectric layer and the upper dielectric pattern are low k-dielectric layers formed of materials such as SiO2, SiOF, SiOC, and porous dielectric. The method includes forming an inter-metal dielectric layer including a lower dielectric layer and upper dielectric layer, which are sequentially stacked, on a lower interconnection formed on a semiconductor substrate. The inter-metal dielectric layer is patterned to form a via hole, which exposes the upper side of the lower interconnection. Then, an upper capping layer is formed on the entire surface of the semiconductor substrate including the via hole. The upper capping layer and the upper dielectric layer are successively patterned to form a trench line exposing the upper side of the via hole. The upper capping layer is formed of at least one material selected from the group consisting of a silicon oxide layer, a silicon carbide layer, a silicon nitride layer, and a silicon oxynitride layer, by using PECVD.
Samsung Electronics Co., Ltd.
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Kyoung-Woo Soo-Geun Wan-Jae Ju-Hyuk Il-Goo Jae-Hak
Lee Lee Park Chung Kim Kim