Slater Matsil, LLP
Semiconductor devices formed using multiple planarization processes
Semiconductor devices and methods of forming are provided. In some embodiments the semiconductor device includes a substrate, and a dielectric layer over the substrate. A first conductive feature is included in the dielectric layer, the first conductive feature comprising a first number of material layers. A second conductive feature is included in the dielectric layer, the second conductive feature comprising a second number of material layers, where the second number is higher than the first number. A first electrical connector is included overlying the first conductive feature.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chun-Wei Ting-Hsun Chi-Jen Chia-Wei Liang-Guang Yi-Sheng Ling-Fu Pinlei Edmund
Hsu Chang Liu Ho Chen Lin Nieh Chu