Lowe Hauptman Ham & Berner, LLP
Method for forming shallow trench isolation in semiconductor device
A method for forming shallow trench isolation in a semiconductor device. The method includes forming a pad oxide and a pad nitride on a semiconductor substrate in successive order, forming a trench in the substrate by etching the pad nitride, the pad oxide and the substrate, removing a portion of the pad oxide to expose top corners of the trench, and rounding the exposed portion of the top corners of the trench by a wet chemical etch.
Dongbu Electronics Co., Ltd.
H
H01L
inventional
Jung Ho
Kim