WPAT, PC
Semiconductor light-emitting device and fabricating method thereof
A semiconductor light-emitting device comprises a light-emitting epitaxial structure, a first electrode structure, a light reflective layer and an resistivity-enhancing structure. The light-emitting epitaxial structure has a first surface and a second surface opposite to the first surface. The first electrode structure is electrically connected to the first surface. The light reflective layer is disposed adjacent to the second surface. The resistivity-enhancing structure is disposed adjacent to the light reflective layer and away from the second surface corresponding to a position of the first electrode structure.
High Power Opto, Inc.
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Wei-Yu Fu-Bang Li-Ping Chih-Sung
Yen Chen Chou Chang