Jacobson Holman PLLC
Semiconductor memory device having a plug contacted to a capacitor electrode and method for fabricating the capacitor
The present invention provides a semiconductor memory device and a fabrication method capable of preventing the contact between a dielectric layer of a capacitor and a diffusion barrier. The plug comprises a diffusion barrier layer and a seed layer for forming a lower electrode of a capacitor. Accordingly, it is possible to prevent the dielectric layer being contacted with the diffusion barrier, whereby the leakage current may be reduced, and the capacitance of the capacitor may be increased.
Hynix Semiconductor Inc.
H
H01L
inventional
Kwon Hyung-Bok
Hong Choi