2-transistor 2-magnetic tunnel junction (2T2MTJ) MRAM structure
A first MRAM set includes a first transistor and a second transistor. The first transistor includes a first gate structure, a first source/drain doping region and a first common source/drain doping region. The second transistor includes a second gate structure, a second source/drain doping region and the first common source/drain doping region. A second MTJ is disposed on the second transistor. The first common source/drain doping region electrically connects to the second MTJ. A first MTJ is disposed on the first transistor. The sizes of the first MTJ and the second MTJ are different. The second MTJ connects to the first MTJ in series. A bit line electrically connects the first MTJ. A source line electrically connects to the first source/drain doping region and the second source/drain doping region.
UNITED MICROELECTRONICS CORP.
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G11C G11C G11C H01L G11C G11C H01L G11C
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Yi-Ting Cheng-Tung Jen-Yu Zong-Sheng Po-Chun Yung-Ching Jian-Jhong Jhen-Siang
Wu Huang Wang Zheng Yang Hsieh Chen Wu