Photodetector device and method for manufacturing the same
A photodetector device and a process for manufacturing the same are described. The photodetector device comprises a doped semiconductor substrate; an intrinsic semiconductor material layer formed over the substrate, for absorbing incident light; an upper semiconductor material layer doped with the opposite type to the substrate, formed on a portion of the intrinsic semiconductor material layer to allow at least a portion of the incident light to directly enter the intrinsic semiconductor material layer; an upper electrode formed in a predetermined pattern on the upper semiconductor material layer, the upper electrode electrically connected to the upper semiconductor material layer; and a lower electrode electrically connected to the substrate, wherein a portion of the intrinsic semiconductor material layer constitutes at least a part of a photo-receiving surface. The photodetector device has a photo-receiving surface, which is formed by removing all or a portion of the upper semiconductor material layer within a photo-receiving area, which allows at least a portion of the incident light to directly enter the intrinsic semiconductor material layer, thereby reducing capacitance even with a relatively large photo-receiving surface.
Samsung Electronics Co., Ltd.
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inventional inventional additional inventional inventional inventional
Jun-young Woong-lin
Kim Hwang