Scully Scott Murphy and Presser
Method for growing β-GA2O3-based single crystal
Provided is a method for growing a β-Ga2O3-based single crystal, whereby it becomes possible to grow a β-Ga2O3-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a β-Ga2O3-based single crystal includes growing a plate-shaped Sn doped β-Ga2O3-based single crystal in the direction of the b axis using a seed crystal.
KOHA CO., LTD. TAMURA CORPORATION
C C C
C30B C30B C30B
inventional inventional inventional
Kei Takekazu Haruka Shinya Kazuyuki
Doioka Masui Matsubara Watanabe Iizuka