Ward and Smith, P.A.
Static random access memory (SRAM) cells including vertical channel transistors
A static random access memory (SRAM) cell can include a first pull-up transistor, a first pull-down transistor, a second pull-up transistor, a second pull-down transistor, a first access transistor, and a second access transistor, all being coupled together in a 6 transistor SRAM cell, wherein each of the transistors is configured as a vertical channel transistor.
Samsung Electronics Co., Ltd.
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Gabjin Suhwan Sungkweon Yubin Donghwan Taehyun Eunae Toshiro Jin Soak
Nam Kim Baek Kim Kim An Chung Nakanishi Kim