Finnegan, Henderson, Farabow, Garrett & Dunner
Nonvolatile read only memory device
 A nonvolatile read only memory detects a time varying change of the amount of data written in the memory cell transistor using a circuit for supplying a constant potential which is higher than the threshold voltage of a reference cell transistor and which is independent of a power source voltage used for reading out connected to the gate of the reference cell transistor. 
Tokyo Shibaura Denki Kabushiki Kaisha
G G
G11C G11C
inventional inventional
Shigeyoshi Sumio
Watanabe Tanaka