Method of forming a silicide
A method of stripping a remnant metal is disclosed. The remnant metal is formed on a transitional silicide of a silicon substrate. Firstly, a surface oxidation process is performed on the transitional silicide, so as to form a protective layer on the transitional silicide. Then, a HPM stripping process is performed on the silicon substrate in order to strip the remnant metal.
United Microelectronics Corp.
H H
H01L H01L
inventional inventional
Yu-Lan Chun-Chieh Tzung-Yu Chao-Ching Yi-Wei
Chang Chang Hung Hsieh Chen