Glenn Patent Group
Method of fabricating AlGaInP light-emitting diode and structure thereof
A soft transparent adhesive layer is utilized to bond a transparent substrate material onto an AlGaInP light-emitting diode epitaxy on a GaAs substrate, and the GaAs substrate is next removed entirely. Then, a mesa etching process is performed to form a first top surface and a second top surface on the AlGaInP light-emitting diode epitaxy for respectively exposing an n-type layer and a p-type layer in the AlGaInP light-emitting diode epitaxy. Next, a metal reflective layer and a barrier layer are formed on the AlGaInP light-emitting diode epitaxy in turn, and electrodes are finally fabricated on the barrier layer.
Epistar Corporation
H H
H01L H01L
inventional inventional
Tien-Fu Tzer-Perng Chih-Sung
Liao Chen Chang