McDermott Will & Emery LLP
Semiconductor device
There is provided a semiconductor device capable of suppressing malfunction of an element to be protected, caused by electrons from an output element into a semiconductor substrate. The semiconductor device is provided with the semiconductor substrate, the output element, the element to be protected, a tap part, and a first active-barrier structure. The first active-barrier structure is disposed between the element to be protected and the tap part. Further, the first active-barrier structure includes an n-type region joined with a p-type doped region, and a p-type region in ohmic coupling with the n-type region.
Renesas Electronics Corporation
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inventional inventional inventional inventional
Kazuma Tetsuya Kikuo Yasuki
Onishi Nitta Kato Yoshihisa