The Marbury Law Group PLLC
Method of making a three dimensional NAND device
A monolithic three dimensional NAND string includes a semiconductor channel, an end part of the semiconductor channel extending substantially perpendicular to a major surface of a substrate, a plurality of control gate electrodes extending substantially parallel to the major surface of the substrate, a charge storage material layer located between the plurality of control gate electrodes and the semiconductor channel, a tunnel dielectric located between the charge storage material layer and the semiconductor channel, and a blocking dielectric containing a plurality of clam-shaped portions each having two horizontal portions connected by a vertical portion. Each of the plurality of control gate electrodes are located at least partially in an opening in the clam-shaped blocking dielectric, and a plurality of discrete cover oxide segments embedded in part of a thickness of the charge storage material layer and located between the blocking dielectric and the charge storage material layer.
SANDISK TECHNOLOGIES INC.
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Senaka Rahul George Wei Raghuveer S. Yanli Masanori Sateesh Shigehiro
Kanakamedala Sharangpani Matamis Zhao Makala Zhang Tsutsumi Koka Fujino