Cantor Colburn LLP
Fin cut forming single and double diffusion breaks
A technique relates to a semiconductor device. A trench is formed in a space structured to accommodate at least two dummy gates in a cell, the space structured to accommodate the at least two dummy gates aligning to another two gates in another cell, the space further including an area previously occupied by a portion of fins. Dielectric material is formed in the space, such that the dielectric material in the space in the cell aligns to the another two gates in the another cell.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Kangguo Juntao Junli Ruilong
Cheng Li Wang Xie