McDermott Will & Emery LLP
Semiconductor light emitting device
There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.
SAMSUNG ELECTRONICS CO., LTD.
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Jae Hyeok Young Jin Jung Sub Dae Myung Yeon Woo Sam Mook Jin Sub Han Kyu
Heo Choi Kim Chun Seo Kang Lee Seong