Harness, Dickey & Pierce, P.L.C.
Light emitting device and method of manufacturing the same
Example embodiments relate to a light emitting device and a method of fabricating the light emitting device. The light emitting device may include an n-type clad layer including a plurality of nitride semiconductor layers, at least one interlayer disposed between the plurality of nitride semiconductor layers, a via hole in which a first electrode is formed, a p-type clad layer, and an active layer between the n-type clad layer and the p-type clad layer.
Samsung Electronics Co., Ltd.
H H
H01L H01L
additional inventional
Jun-youn Jae-won Young-jo Su-hee
Kim Lee Tak Chae