Innovation Counsel LLP
Vertical channel thin-film transistor and method of manufacturing the same
Provided is a thin-film transistor (TFT) substrate. The TFT substrate includes: an insulating substrate; a semiconductor pattern which is formed on the insulating substrate, the semiconductor pattern having a top surface and a bottom surface; a source electrode and a drain electrode which are disposed on the top and bottom surfaces of the semiconductor pattern, respectively; a gate electrode which is disposed alongside the semiconductor pattern with a gate insulating film interposed therebetween; a data line which is connected to the source electrode and extends in a first direction; a gate line which is connected to the gate electrode and extends in a second direction; and a pixel electrode which is connected to the drain electrode and is formed in a pixel region.
Samsung Electronics Co., Ltd.
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inventional inventional inventional
Woo-Geun Yang-Ho Cheon-Jae Young-Je Jae-Sung Hoon Yun-Seok
Lee Jung Maeng Cho Kim Kang Lee