Townsend and Townsend and Crew LLP
Method for fabricating semiconductor device
A method for fabricating a semiconductor device includes forming a pattern including a first layer including tungsten, performing a gas flowing process on the pattern in a gas ambience including nitrogen, and forming a second layer over the pattern using a source gas including nitrogen, wherein the purge is performed at a given temperature for a given period of time in a manner that a reaction between the first layer and the nitrogen used when forming the second layer is controlled.
Hynix Semiconductor Inc.
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Min-Gyu Won Kwan-Yong Seung-Ryong Tae-Kwon Hong-Seon
Sung Kim Lim Lee Lee Yang