McDermott Will & Emery LLP
Method for etching target layer of semiconductor device in etching apparatus
A method for etching a target layer of a semiconductor device in an etching apparatus is provided. To form an element, the method includes forming a photoresist pattern on the target layer of the semiconductor device, in which the photoresist pattern has an after-develop-inspection critical dimension (ADI CD). A target after-etch-inspection critical dimension (AEI CD) of the element is provided, as well as a trim time of the target layer. The etching apparatus is provided and a formation time of a protective layer on an inner wall of the etching apparatus is determined based on the ADI CD, the target AEI CD and the trim time. The protective layer for the predetermined formation time is formed to perform a trimming process on the target layer for the trim time by using the photoresist pattern as a mask, so as to form the element.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Han-Wen Chih-Yu Wei-Tai Chen-Hsiang Wen-Sheng Cherng-Chang
Liao Lin Lin Lu Wang Tsuei