Van Pelt, Yi & James LLP
Method for improving sensing margin of resistive memory
A method in a resistive memory device includes configuring two or more memory cells in a column of the array sharing the same bit line and the same source line to operate in parallel as a merged memory cell; programming the resistance of the merged memory cell in response to the write data, the resistance of the two or more resistive memory cells in the merged memory cell being programmed simultaneously; and reading the programmed resistance value of the merged memory cell, the programmed resistance of the two or more memory cells in the merged memory cell being read simultaneously.
Integrated Silicon Solution, Inc.
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Geun-Young Justin Seong Jun
Park Kim Jang