McDermott, Will & Emery
Semiconductor device and manufacturing method thereof
There is described a high-integration, superior-power-efficiency semiconductor device having a storage node, whose structure is suitable for enabling high-yield and inexpensive manufacture. A plurality of transfer gates are formed on a silicon substrate. An interlayer film is provided so as to cover the transfer gates. A hollow node is formed from conductive material on the interlayer film. A contact hole is formed so as to penetrate through the interlayer film without exposing the transfer gate, as well as to expose the surface of the silicon substrate within the hollow node. A conductive layer is formed so as to cover the interior surface of the contact hole to a predetermined thickness in the region ranging from the interior surface of the hollow node to the exposed portion of the silicon substrate.
Mitsubishi Denki Kabushiki Kaisha
H H
H01L H01L
additional inventional
Shunji Shinya
Yasumura Watanabe