Smith, Gambrell & Russell, LLP.
Semiconductor device
A semiconductor device includes a field plate on an insulating film covering a transistor, the field plate being electrically coupled to a gate of the transistor via the insulating film, and the transistor being located on a substrate, a silicon nitride protective film covering the insulating film and the field plate, a silicon oxide base film on the silicon nitride protective film, and a MIM capacitor on the silicon oxide base film. The MIM capacitor includes a first electrode, a dielectric film and a second electrode which are stacked in an order. The MIM capacitor is formed by performing wet etching on the silicon oxide base film on the field plate after the dielectric film is formed.
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
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Takuma Tomoki
Nakano Maruyama