Foley & Lardner
Semiconductor device and method of manufacturing the same
 A diffused layer serves as a source and a drain. It is formed comprised of a deep first diffused layer and a shallow second diffused layer positioned between the first diffused layer and the channel region. In the second diffused region, a distribution in a depth direction of carriers has a profile in which the concentration is more than 5.times.10.sup.18 cm.sup.-3 at the peak and is in correspondence with a carrier concentration of the semiconductor substrate at a depth less than 0.04 .mu.m. Since the second diffused layer has a high concentration, the short-channel effect can be suppressed. As the second diffused region, a solid phase diffusion source such as an impurity doped silicate glass is used. 
Kabushiki Kaisha Toshiba
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Hisayo Yukihiro Yasushi Yasuhiro Satoshi Hideaki Masanobu Mizuki Hiroshi Takashi
Momose Ushiku Akasaka Katsumata Matsuda Nii Saito Ono Iwai Yoshitomi