Haynes and Boone, LLP
Method for cleaning metal gate surface
The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a H3PO4 solution.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Shich-Chang Li-Chieh Chi-Jen Yung-Chung He Hui Liang-Guang
Suen Wu Liu Chen Peng Chen