Buchanan Ingersoll & Rooney PC
High pressure bevel etch process
A method of preventing arcing during bevel edge etching a semiconductor substrate with a plasma in a bevel etcher in which the semiconductor substrate is supported on a semiconductor substrate support comprises bevel edge etching the semiconductor substrate with the plasma in the bevel etcher while evacuating the bevel etcher to a pressure of 3 to 100 Torr while maintaining RF voltage seen at the wafer at a low enough value to avoid arcing.
Lam Research Corporation
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inventional inventional inventional
Tong Yunsang S. Andreas
Fang Kim Fischer