The Marbury Law Group PLLC
Three-dimensional memory device containing plural work function word lines and methods of forming the same
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through the alternating stack, and memory stack structures extending through the alternating stack. Each of the memory stack structures contains a memory film and a vertical semiconductor channel. At least one of the electrically conductive layers contains a first conductive material portion having a respective inner sidewall that contacts a respective one of the memory films at a vertical interface, and a second conductive material portion that has a different composition from the first conductive material portion, and contacting the first electrically conductive material portion. The first conductive material portion has a lower work function than the second conductive material portion.
SANDISK TECHNOLOGIES LLC
H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Ashish Wei Dong-il Yanli Peng Raghuveer S.
Baraskar Zhao Moon Zhang Zhang Makala