Slater and Matsil, L.L.P.
Vertically integrated image sensor chips and methods for forming the same
A device includes a Backside Illumination (BSI) image sensor chip, which includes an image sensor disposed on a front side of a first semiconductor substrate, and a first interconnect structure including a plurality of metal layers on the front side of the first semiconductor substrate. A device chip is bonded to the image sensor chip. The device chip includes an active device on a front side of a second semiconductor substrate, and a second interconnect structure including a plurality of metal layers on the front side of the second semiconductor substrate. A first via penetrates through the BSI image sensor chip to connect to a first metal pad in the second interconnect structure. A second via penetrates through a dielectric layer in the first interconnect structure to connect to a second metal pad in the first interconnect structure, wherein the first via and the second via are electrically connected.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Jen-Cheng Wen-De Tzu-Hsuan Feng-Chi Jeng-Shyan Szu-Ying Dun-Nian
Liu Wang Hsu Hung Lin Chen Yaung