Slater & Matsil, L.L.P.
Silicide formation on SiGe
A semiconductor structure includes a first silicon-containing layer comprising an element selected from the group consisting essentially of carbon and germanium wherein the silicon-containing layer has a first atomic percentage of the element to the element and silicon, a second silicon-containing layer comprising the element over the first silicon-containing layer, and a silicide layer on the second silicon-containing layer. The element in the second silicon-containing layer has a second atomic percentage of the element to the element and silicon, wherein the second atomic percentage is substantially lower than the first atomic percentage.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Jerry Shau-Lin Chii-Ming Chih-Wei
Lai Shue Wu Chang