Slater and Matsil, L.L.P.
Barrier layer for copper interconnect
A method for forming an interconnect structure includes forming a dielectric layer overlying a substrate, forming a metal-containing layer in the dielectric layer, forming a barrier layer overlying the metal-containing layer, and performing a thermal process to form a metal oxide layer underlying the conductive layer. The metal oxide layer is a barrier layer formed at the boundary between the dielectric layer and the metal-containing layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chi-Yu Yao-Hsiang Yu-Chang Yu-Min Kuei-Pin Chen-Kuang Yu-Hung
Chou Liang Hsiao Chang Lee Lien Lin