Magnetic tunnel junction device and fabrication
A magnetic tunneling junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, an apparatus is disclosed that includes an MTJ device. The MTJ device includes a barrier layer, a free layer, and a magnesium (Mg) capping layer. The free layer is positioned between the barrier layer and the magnesium (Mg) capping layer.
QUALCOMM Incorporated
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H01L H01L
inventional inventional
Xiaochun Seung H. Xia Kangho
Zhu Kang Li Lee