Duane Morris LLP
Method for silicide formation on semiconductor devices
A method for forming nickel silicide includes degassing a semiconductor substrate that includes a silicon surface. After the degassing operation, the substrate is cooled prior to a metal deposition process, during a metal deposition process, or both. The cooling suppresses the temperature of the substrate to a temperature less than the temperature required for the formation of nickel silicide. Nickel diffusion is minimized during the deposition process. After deposition, an annealing process is used to urge the formation of a uniform silicide film. In various embodiments, the metal film may include a binary phase alloy containing nickel and a further element.
Taiwan Semiconductor Manufacturing Co., Ltd.
H
H01L
inventional
Shih-Wei Chii-Ming Gin Jei Cheng-Tung Shau-Lin Chih-Wei
Chou Wu Wang Lin Shue Chang