Pabst Patent Group LLP
Multi-layer gate dielectric field-effect transistor and manufacturing process thereof
A field-effect transistor includes a gate, a source and a drain; a semiconductor layer between the source and the drain; and a gate insulator between the gate and the semiconductor layer. The gate insulator comprises a first layer adjoining the semiconductor layer; and a second layer. The first layer is formed from an amorphous fluoropolymer having a first dielectric constant and a first thickness. The second layer has a second dielectric constant and a second thickness. The first dielectric constant is smaller than 3, the first thickness is smaller than 200 nm, the second dielectric constant is higher than 5, and the second thickness is smaller than 500 nm.
Georgia Tech Research Corporation
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Jungbae Do Kyung Bernard Canek
Kim Hwang Kippelen Fuentes-Hernandez