Global IP Counselors, LLP
Nitride semiconductor laser device
The nitride semiconductor laser device includes a substrate, a nitride semiconductor layer having a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer stacked in this order on the substrate, and a ridge provided on a surface of the nitride semiconductor layer. The surface of the nitride semiconductor layer includes a generally flat part and first and second grooves which extend along the ridge in a resonator direction, the first groove being formed continuous to a first side surface of the ridge, the second groove being formed continuous to a second side surface of the ridge which is opposite to the first side surface.
Nichia Corporation
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H01S B82Y H01S H01S H01S H01S
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Takeshi Takashi
Okada Miyoshi