Amin, Turocy & Watson, LLP
Passivation of group III-nitride heterojunction devices
Passivation of group III-nitride heterojunction devices is described herein. The passivation facilitates simultaneous realization of effective/high current collapse suppression and low leakage current without the use of a sophisticated multiple-field plate technique. The passivation can be achieved by growing a charge-polarized AlN thin film on the surface of a group III-nitride based heterojunction device by plasma-enhanced atomic layer deposition such that positive polarization charges are induced at the interface to compensate for a majority of negative charges at the interface.
The Hong Kong University of Science and Technology
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Jing Sen Zhikai Qimeng
Chen Huang Tang Jiang