Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
Method of manufacturing a non-volatile memory device
A method of manufacturing a non-volatile semiconductor memory device includes forming a sub-gate without an additional mask. A low word-line resistance is formed by a metal silicide layer on a main gate of the memory device. In operation, application of a voltage to the sub-gate forms a transient state inversion layer that serves as a bit-line, so that no implantation is required to form the bit-line.
Macronix International Co., Ltd.
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Chiahua Erh-Kun Hang-Ting Kuang Yeu Yen-Hao
Ho Lai Lue Hsieh Shih