IP&T Group LLP
Single electron transistor
A transistor and a fabrication method thereof. A transistor includes a channel region including linkers, formed on a substrate, and a metallic nanoparticle grown from metal ions bonded to the linkers, a source region disposed at one end of the channel region, a drain region disposed at the other end of the channel region opposite of the source region, and a gate coupled to the channel region and serving to control migration of at least one charges in the channel region.
SK INNOVATION CO., LTD.
H H B H H
H01L H01L B82Y H01L H01L
inventional additional inventional additional inventional
Young-Keun Tae-Hee Jun-Hyung Sung-Jae Hong
Lee Kim Kim An You