Haynes and Boone, LLP
Post-formation mends of dielectric features
The present disclosure provides embodiments of semiconductor structures and method of forming the same. An example semiconductor structure includes a first source/drain feature and a second source/drain feature and a hybrid fin disposed between the first source/drain feature and the second source/drain feature and extending lengthwise along a first direction. The hybrid fin includes an inner feature and an outer layer disposed around the inner feature. The outer layer includes silicon oxycarbonitride and the inner feature includes silicon carbonitride.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Yung-Cheng Hung Cheng Wan-Yi Chi On Che-Hao
Lu Lin Kao Chui Chang