Tung & Associates
Multiple gate field effect transistor structure
A multiple gate region FET device for forming up to 6 FET devices and method for forming the same, the device including a multiple fin shaped structure comprising a semiconductor material disposed on a substrate; said multiple fin shaped structure comprising substantially parallel spaced apart sidewall portions, each of said sidewall portions comprising major inner and outer surfaces and an upper surface; wherein, each of said surfaces comprises a surface for forming an overlying field effect transistor (FET).
Taiwan Semiconductor Manufacturing Co., Ltd.
H H H
H01L H01L H01L
inventional inventional inventional
Ju-Wang Zhong Tang Hun-Jan Chang-Yun Sheng-Da Jyu-Horng
Hsu Xuan Tao Chang Liu Shieh