Tung & Associates
Multi-step chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layer
Within a method for forming an aperture fill layer within a aperture, there is first provided a topographic substrate having an aperture formed therein. There is then formed over the topographic substrate and filling the aperture a blanket aperture fill layer. There is then planarized, while employing a first chemical mechanical polish (CMP) planarizing method, the blanket aperture fill layer to form a blanket planarized aperture fill layer while not reaching the topographic substrate. Finally, there is then planarized, while employing a second planarizing method, the blanket planarized aperture fill layer to form within the aperture a patterned planarized aperture fill layer. The two step planarizing method may be employed for forming with enhanced planarity and attenuated topographic substrate erosion a patterned planarized aperture fill layer, such as a patterned planarized trench isolation region, within a topographic substrate, such as a topographic semiconductor substrate.
Taiwan Semiconductor Manufacturing Co., Ltd
H H
H01L H01L
inventional inventional
Juing-Yi Chung-Long Syun-Ming
Cheng Chang Jang