Ratner & Prestia
Semiconductor device with particular metal silicide film
 In a metal silicide film, excessive silicon is contained and precipitated in silicide grain boundaries thereof. The thus precipitated excessive silicon makes a diffusion path of impurities, which extends along WSi.sub.2 grain interfaces, discontinuous in the metal silicide film. As a result, the impurities do not diffuse laterally in the metal silicide film even after a heat treatment is performed. 
Matsushita Electric Industrial Co., Ltd.
H
H01L
inventional
Toyokazu
Fujii