Hamre, Schumann, Mueller & Larson, P.C.
Trench gate power semiconductor field effect transistor
Provided in the present invention is a trench gate power MOSFET (TMOS/UMOS) structure with a heavily doped polysilicon source region. The polysilicon source region is formed by deposition, and a trench-shaped contact hole is used at the source region, in order to attain low contact resistance and small cell pitch. The present invention may also be implemented in an IGBT.
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Shuk-Wa Xianda Johnny Kin On
Fung Zhou Sin