Ingrassia Fisher & Lorenz, P.C.
Methods for fabricating a FINFET integrated circuit on a bulk silicon substrate
Methods are provided for fabricating a FINFET integrated circuit that includes epitaxially growing a first silicon germanium layer and a second silicon layer overlying a silicon substrate. The second silicon layer is etched to form a silicon fin using the first silicon germanium layer as an etch stop. The first silicon germanium layer underlying the fin is removed to form a void underlying the fin and the void is filled with an insulating material. A gate structure is then formed overlying the fin.
Globalfoundries, Inc.
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inventional inventional inventional
Xiaodong Yanxiang Jinping
Yang Liu Liu