Yee & Associates, P.C.
Method and apparatus for characterizing shared contacts in high-density SRAM cell design
Test structures are provided for accurately quantifying shared contact resistance. The test structures are built based upon an actual memory cell, which is self-aligning to allow shared contact chains through an array of test cells. A main array of test cells is built to provide a chain of shared contact resistance. Using the main array of test cells, a resistance in the shared contact chain may be measured. Supplemental arrays of test cells is built to provide a chain of poly side resistance, a chain of island side resistance, a chain of island connection line resistance, and a chain of poly connection resistance. A tester measures resistance using the test structures and uses the values to accurately determine shared contact resistance.
LSI Logic Corporation
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Subramanian Ruggero Franklin
Ramesh Castagnetti Duan