Lee & Morse, P.C.
Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALD
A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.
DOW SILICONES CORPORATION SAMSUNG ELECTRONICS CO., LTD.
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Michael David Won Woong Jung Sik Sun hye Xiaobing Youn Joung Byung Keun Brian David
Telgenhoff Chung Choi Hwang Zhou Cho Hwang Rekken