Anova Law Group, PLLC
Semiconductor structure and fabrication method thereof
A semiconductor structure and a fabrication method are provided. A fabrication method includes providing a substrate including an NMOS region and a PMOS region; forming a first high-K gate dielectric layer on the NMOS region of the substrate; forming an interfacial layer on the PMOS region of the substrate; forming a second high-K gate dielectric layer on the interfacial layer and the first high-K gate dielectric layer; forming a metal layer on the second high-K gate dielectric layer.
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
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Yong
Li