J.C. Patents
Processes for fabricating FinFET structures with semiconductor compound portions formed in cavities and extending over sidewall spacers
A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is formed on the sidewall of the fin. A portion of the fin is removed, such that the spacer and the surface of the remaining fin together define a cavity. A piece of a semiconductor compound is formed from the cavity, wherein the upper portion of the piece of the semiconductor compound laterally extends over the spacer.
United Microelectronics Corp.
H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional additional inventional inventional inventional inventional
Chien-Ting Cho-Han Yu-Hsiang Yen-Liang Chung-Fu Ssu-I
Lin Fan Hung Wu Chang Fu