Kilpatrick Townsend and Stockton LLP
Method to improve HCI performance for FinFET
A semiconductor device includes a substrate structure, multiple fins protruding from the substrate structure, each of the fins having a first portion, a second portion on opposite sides of the first portion, and a third portion at an outer side of the first portion and adjacent to the second portion, a gate structure on the upper surface of the first portion, sidewall spacers on opposite sides of the gate structure and covering the upper surface of the second portion, and source and drain regions outside of the sidewall spacers. The source and drain regions each have an upper surface higher than the second portion upper surface. The first portion protrudes from the second portion. The upper surface of the second portion is lower than the first portion upper surface. The upper surface of the third portion is lower than the second portion upper surface.
Semiconductor Manufacturing International (Shanghai) Corporation Semiconductor Manufacturing International (Beijing) Corporation
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