Harness, Dickey & Pierce, P.L.C.
Non-volatile memory device and method of fabricating the same
Provided are a non-volatile memory device that may expand to a stacked structure and may be more easily highly integrated and an economical method of fabricating the non-volatile memory device. The non-volatile memory device may include at least one semiconductor column. At least one first control gate electrode may be arranged on a first side of the at least one semiconductor column. At least one second control gate electrode may be arranged on a second side of the at least one semiconductor column. A first charge storage layer may be between the at least one first control gate electrode and the at least one semiconductor column. A second charge storage layer may be between the at least one second control gate electrode and the at least one semiconductor column.
Samsung Electronics Co., Ltd.
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Young-gu Yoon-dong Won-joo Seung-hoon Suk-pil
Jin Park Kim Lee Kim