Muncy, Geissler, Olds & Lowe, P.C.
Self-rectifying resistive random access memory cell structure
A self-rectifying resistive random access memory (RRAM) cell structure is provided. The self-rectifying RRAM cell structure includes a first electrode. An insulator-metal-transition (IMT) material layer is disposed on the first electrode. A barrier layer is disposed on the IMT material layer. A second electrode is disposed on the barrier layer. The IMT material layer is separated from the second electrode by the barrier layer.
WINBOND ELECTRONICS CORP.
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Chun-Tse Tuo-Hung Chung-Wei
Chou Hou Hsu