Blakely, Sokoloff Taylor & Zafman LLP
Method for etching high dielectric constant materials
In one implementation, a method is provided for etching a high k dielectric material in a plasma etch reactor, the method comprising plasma etching the high k dielectric material with a first plasma gas reactant mixture having BCl3. The high k dielectric material may include Al2O3 in a stack having a silicon layer. The etching may include supplying a passivation gas, for example C2H4, and may further include supplying a diluent gas such as a noble gas, for example He. In some implementations, the etching may be performed with a reactive ion etch process.
Applied Materials, Inc.
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inventional inventional inventional
Yan Mei Hua Wei Xikun
Du Shen Liu Wang