Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one chamfer short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective chamfer short, corner short, and via open test areas
A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one chamfer short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective chamfer short, corner short, and via open test areas.
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Andrzej Larg Carl Markus Hans Rakesh Marci Jeremy Sherry Conor Dennis Stephen Marcin Christopher Nobuharu Hideki Indranil Kelvin Timothy Tomasz John Jonathan Kimon Vyacheslav Simone Sheng-Che
Strojwas Weiland Taylor Rauscher Eisenmann Vallishayee Liao Cheng Lee O'Sullivan Ciplickas Lam Strojwas Hess Yokoyama Matsuhashi De Doong Fiscus Brozek Kibarian Haigh Michaels Rovner Comensoli Lin