Myers Bigel Sibley & Sajovec
Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same
A semiconductor device according to some embodiments includes a semiconductor layer having a first conductivity type and a surface in which an active region of the semiconductor device is defined. A plurality of spaced apart first doped regions are arranged within the active region. The plurality of first doped regions have a second conductivity type that is opposite the first conductivity type, have a first dopant concentration, and define a plurality of exposed portions of the semiconductor layer within the active region. The plurality of first doped regions are arranged as islands in the semiconductor layer. A second doped region in the semiconductor layer has the second conductivity type and has a second dopant concentration that is greater than the first dopant concentration.
Cree, Inc.
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Sei-Hyung Anant Qingchun
Ryu Agarwal Zhang