Schwabe, Williamson & Wyatt P.C.
P-I-N diode and connected group III-N device and their methods of fabrication
A P-i-N diode structure includes a group III-N semiconductor material disposed on a substrate. An n-doped raised drain structure is disposed on the group III-N semiconductor material. An intrinsic group III-N semiconductor material is disposed on the n-doped raised drain structure. A p-doped group III-N semiconductor material is disposed on the intrinsic group III-N semiconductor material. A first electrode is connected to the p-doped group III-N semiconductor material. A second electrode is electrically coupled to the n-doped raised drain structure. In an embodiment, a group III-N transistor is electrically coupled to the P-i-N diode. In an embodiment, a group III-N transistor is electrically isolated from the P-i-N diode. In an embodiment, a gate electrode and an n-doped raised drain structure are electrically coupled to the n-doped raised drain structure and the second electrode of the P-i-N diode to form the group III-N transistor.
Intel Corporation
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Han Wui Marko Sansaptak
Then Radosavljevic Dasgupta