Scully, Scott, Murphy & Presser, P.C.
Transistor with reduced gate resistance and improved process margin of forming self-aligned contact
A semiconductor structure is provided that includes a gate conductor structure having a middle portion that has a vertical thickness that is greater than a vertical thickness of each end portion, and a self-aligned dielectric gate cap located on the gate conductor structure and having a middle portion that has a vertical thickness that is less than a vertical thickness of each end portion. The aforementioned gate conductor structure, which is taller in the middle and shorter at the edges, has reduced gate resistance, while the aforementioned self-aligned dielectric gate cap, which is taller at the edges and shorter in the middle, increases process margin for contact formation.
International Business Machines Corporation
H H H H
H01L H01L H01L H01L
inventional inventional inventional inventional
Juntao Dexin Kangguo Zhenxing
Li Kong Cheng Bi