Stein, McEwen & Bui, LLP
Method of fabricating GaN
A method of fabricating a thick gallium nitride (GaN) layer includes forming a porous GaN layer having a thickness of 10-1000 nm by etching a GaN substrate in a reaction chamber in an HCI and NH3 gas atmosphere and forming an in-situ GaN growth layer in the reaction chamber. The method of forming the porous GaN layer and the thick GaN layer in-situ proceeds in a single chamber. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN etching and growth are performed using an HVPE process gas such that costs are greatly reduced.
Samsung Corning Co., Ltd.
H H C H H H H C
H01L H01L C30B H01L H01L H01L H01L C30B
inventional additional inventional inventional inventional inventional inventional inventional
Jun-sung Jai-yong In-jae
Choi Han Song