Slater Matsil, LLP
Semiconductor devices and manufacturing methods thereof
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first fin field effect transistor (FinFET) disposed over a substrate, and a second FinFET device disposed over the first FinFET. A junction isolation material is disposed between a source of the first FinFET and a source of the second FinFET.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Cheng-Yi Hung-Chih Chee-Wee Chih-Sheng
Peng Chang Liu Chang