Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same
A quantum well (QW) layer is provided in a semiconductive device. The QW layer is provided with a beryllium-doped halo layer in a barrier structure below the QW layer. The semiconductive device includes InGaAs bottom and top barrier layers respectively below and above the QW layer. The semiconductive device also includes a high-k gate dielectric layer that sits on the InP spacer first layer in a gate recess. A process of forming the QW layer includes using an off-cut semiconductive substrate.
Intel Corporation
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Marko Titash Benjamin Gilbert Mantu Ravi
Radosavljevic Rakshit Chu-Kung Dewey Hudait Pillarisetty