Blakely, Sokoloff, Taylor & Zafman LLP
Method of fabrication of a novel flash integrated circuit
 A method of fabricating a flash memory integrated circuit is described. In an embodiment of the present invention a dielectric filled trench isolation region is formed in a silicon substrate. The dielectric filled trench isolation region isolates a first portion of the silicon substrate from a second portion of the silicon substrate. A portion of the dielectric in the trench is then removed to reveal a portion of the silicon substrate in the trench between the first and second portions of the silicon substrate. Ions are then implanted to form a first source region in the first portion of the silicon substrate and to form a second source region in the second portion of the silicon substrate and to form a doped region in the revealed silicon substrate in the trench wherein the doped region in the trench extends from the first doped source region to the second doped source region. 
Intel Corporation
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inventional inventional inventional
Cheng C. Glen Daniel Krishna Raghupathy V. Yudong
Hu Wada Xu Parat Giridhar Kim