McDermott Will & Emery LLP
Ion milling device and ion milling processing method
The sample 3 is tilted/oscillated with respect to the optical axis (Z-axis) of the ion beam 2 to repeat tilt and tilt/restoration of a processing target surface 3a of the sample 3 between a surface state in which the processing target surface 3a of the sample 3 faces a tilt axis direction (Y-axis direction) and a tilted surface state in which a portion of the processing target surface 3a on the sample stage side protrudes in the tilt axis direction (Y-axis direction) than does a portion of the processing target surface 3 on the mask side, so that the processing target surface 3a is irradiated with the ion beam 2 at a low angle, and projections/recesses 63 derived from a void 61 or a dissimilar material 62 are suppressed. Accordingly, it is possible to suppress generation of projections/recesses derived from a void or dissimilar material in fabrication of a cross section sample, and thus fabricate a sample cross section suitable for observation/analysis.
HITACHI HIGH-TECHNOLOGIES CORPORATION
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Shunya Mami Hisayuki Atsushi
Watanabe Konomi Takasu Kamino