Myers Bigel, P.A.
Semiconductor devices with shaped portions of elevated source/drain regions
A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.
Samsung Electronics Co., Ltd.
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Chung-Hwan Sang-Bom Sang-Woo Jeong-Ik Je-Hyung Chul-Sung Dae-Yong Hyo-Seok
Shin Kang Lee Kim Ryu Kim Kim Choi