Birch, Stewart, Kolasch & Birch, LLP
Schottky diode and method for manufacturing the same
A Schottky diode is provided, which includes a well of a first conductive type and a lightly doped region of a second conductive type on the well, wherein the first conductive type is opposite to the second conductive type. The Schottky diode includes a heavily doped region of the second conductive type on the well, and a gate structure on a part of the lightly doped region. The gate structure includes a gate electrode and a gate dielectric layer. The lightly doped region not covered by the gate structure and the heavily doped region are disposed at two opposite sides of the gate structure, respectively. The Schottky diode includes a first contact electrically connecting the heavily doped region and a first electrode, a second contact electrically connecting the gate electrode and a second electrode, and a third contact electrically connecting the lightly doped region and the second electrode.
Vanguard International Semiconductor Corporation
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inventional inventional inventional inventional
Jun-Wei Pei-Heng Chih-Cherng Chia-Hao Manoj
Chen Hung Liao Lee Kumar