IP & T Group LLP
Variable resistive memory device and method of fabricating the same
A variable resistive memory device includes an array of a plurality of memory cells. Each of the plurality of memory cells includes first and second electrodes, and an SbmSen material layer (where m and n are positive numbers, respectively) interposed between the first electrode and the second electrode. The SbmSen material layer includes a separation structure in which a plurality of Sb atoms are in contact with a plurality of Se atoms.
Hynix Semiconductor Inc. Industry-Academic Cooperation Foundation, Yonsei University
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G11C H01L G11C H01L H01L H01L H01L
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Hye Jin Tae Hyeon Mann Ho Ju Heyuck
Choi Kim Cho Baeck