Morrison & Foerster LLP
Electrically programmable and electrically erasable semiconductor memory device
A semiconductor memory device of the present invention includes an electrically programmable and erasable nonvolatile memory device which uses a plurality of memory cells requiring a first potential for reading data and a second potential for data programming, the second potential being higher than the first potential, a latch circuit for receiving data and temporarily storing the data, a pulse generator which generates a pulse used for programming data into a memory cell and is coupled in order to receive the second potential, a comparator for comparing data in the latch circuit with data in a memory cell, and a controller for controlling the pulse generator to repeatedly generate a pulse until the data in the latch circuit matches the data in the memory cell, the controller coupled to the comparator and the pulse generator. The controller controls so that the pulse is repeatedly generated until data is programmed in a memory cell. It is thereby possible to improve the speed of writing and erasing processes on a nonvolatile memory cell of the present invention and to improve reliability.
Sharp Kabushiki Kaisha
G H H
G11C H01L H01L
inventional inventional additional
Nobuaki Akihide Masaru Yoshinao Hiroshi
Matsuoka Shibata Nawaki Morikawa Iwata