Magnetoresistive random access memory
A semiconductor device includes: a substrate having a magnetic tunneling junction (MTJ) region and a logic region; a magnetic tunneling junction (MTJ) on the MTJ region, wherein a top view of the MTJ comprises a circle; and a first metal interconnection on the MTJ. Preferably, a top view of the first metal interconnection comprises a flat oval overlapping the circle.
UNITED MICROELECTRONICS CORP.
G H H H
G11C H01L H01L H01L
inventional inventional inventional inventional
Yi-Chung Chih-Kai Kuo-Hsing Sheng-Yuan Ting-Hsiang
Sheng Kang Lee Hsueh Huang