Anova Law Group, PLLC
PMOS transistors and fabrication methods thereof
A method is provided for fabricating a PMOS transistor. The method includes providing a semiconductor substrate; and forming gate structures on a surface of the semiconductor substrate. The method also includes forming sidewall spacers around the gate structures; and forming a protection layer on the sidewall spacers. Further, the method includes forming sigma shape trenches in the semiconductor substrate at sides of the gate structures; and forming SiGe structures with a surface protruding from the surface of the semiconductor substrate in the sigma shape trenches. Further, the method also includes removing the sidewall spacers and a portion of the protection layer; and forming lightly doped drain regions in the semiconductor substrate at both sides of the gate structures.
Semiconductor Manufacturing International (Shanghai) Corporation
H H H H H H
H01L H01L H01L H01L H01L H01L
inventional inventional inventional additional inventional inventional
Jialei
Liu