Duane Morris LLP
Multi-zone temperature control for semiconductor wafer
An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H H H
H01L H01L H01L H01L
inventional inventional inventional inventional
Jih-Jse Chyi-Shyuan Hsin-Hsien Chi-Ming Jong-I Jun-Lin Ming-Yu Jo-Fei Chun-Lin Zin-Chang
Lin Chern Wu Yang Mou Yeh Fan Wang Chang Wei