Schwabe, Williamson & Wyatt, P.C.
Increasing carrier injection velocity for integrated circuit devices
Embodiments of the present disclosure describe structures and techniques to increase carrier injection velocity for integrated circuit devices. An integrated circuit device includes a semiconductor substrate, a first barrier film coupled with the semiconductor substrate, a quantum well channel coupled to the first barrier film, the quantum well channel comprising a first material having a first bandgap energy, and a source structure coupled to launch mobile charge carriers into the quantum well channel, the source structure comprising a second material having a second bandgap energy, wherein the second bandgap energy is greater than the first bandgap energy. Other embodiments may be described and/or claimed.
Intel Corporation
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Benjamin Gilbert Marko Niloy
Chu-Kung Dewey Radosavljevic Mukherjee