Fabrication method for non-volatile memory
A fabrication method for a non-volatile memory includes providing a first metal oxide semiconductor (MOS) transistor having a control gate and a second MOS transistor having a source, a drain, and a floating gate. The first MOS transistor and the second MOS transistor are formed on a well. The method further includes biasing the first MOS with a first biasing voltage to actuate the first MOS transistor, biasing the second MOS transistor with a second biasing voltage to enable the second MOS transistor to generate a gate current, and adjusting capacitances between the floating gate of the second MOS transistor and the drain, the source, the control gate, and the well according to voltage difference between the floating gate of the second MOS transistor and the source of the second MOS transistor.
eMemory Technology Inc.
G G G H G
G11C G11C G11C H01L G11C
additional additional additional inventional inventional
Ming-Chou Hsin-Ming Wei-Zhe Shih-Jye
Ho Chen Wong Shen