Volentine Francos, PLLC
Filtering technique for CVD chamber process gases
 A method and an apparatus for removing particulate contaminant are provided in order to ensure high purity during a tungsten suicide deposition process. The method for removing particulate contaminant in tungsten silicide deposition process using SiH.sub.4 as silicon source gas and NF.sub.3 as cleaning gas, includes purging a carrier gas line for an SiH.sub.4 silicon source gas to remove the contaminant in the chamber and carrier gas line when the carrier gas is supplied with the chamber, and the NF.sub.3 cleaning gas is supplied to the chamber to form plasma. After a plasma cleaning, the gas line flowing reaction gas responding to the SiH.sub.4 is purged to remove the contaminant in the chamber and the reaction gas line. As a result, any particulate contaminant is removed or remains at a minimum level that has no effect on the tungsten silicide deposition process. 
Samsung Electronics Co., Ltd.
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inventional inventional inventional additional
Dong-Geun Hyun-kuk Hyun-Young Young-Roe Hyong-Soo Ju-Wan Dong-chan Kyung-Burn
Na Ko Kim Kim Kim Kim Park Koo