Duane Morris LLP
3D IC with serial gate MOS device, and method of making the 3D IC
A die stack comprises a first integrated circuit (IC) die having at least a first device comprising a first source, a first drain and a first gate electrode above a first channel region between the first source and the first drain. A second IC die has at least a second device comprising a second source, a second drain and a second gate electrode above a second channel region between the second source and the second drain. The second gate electrode is connected to the first gate electrode by a path including a first through substrate via (TSV), the second drain connected to the first source by a path including a second TSV.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Ruey-Bin Chao Chieh Chih-Hsien
Sheen Li Chang