Baker & McKenzie LLP
Systems and methods for self convergence during erase of a non-volatile memory device
A non-volatile memory device implements self-convergence during the normal erase cycle through control of physical aspects, such as thickness, width, area, etc., of the dielectric layers in the gate structure as well as of the overall gate structure. Self-convergence can also be aided during the normal erase cycle by ramping the erase voltage applied to the control gate during the erase cycle.
Macronix International Co. Ltd.
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Chu-Ching Cheng-Ming Huei-Huarng
Wu Yih Chen