Resistance based memory having two-diode access device
A resistance-based memory has a two-diode access device. In a particular embodiment, a method includes biasing a bit line and a sense line to generate a current through a resistance-based memory element via a first diode or a second diode. A cathode of the first diode is coupled to the bit line and an anode of the second diode is coupled to the sense line.
QUALCOMM Incorporated
G G G G G G G G G G
G11C G11C G11C G11C G11C G11C G11C G11C G11C G11C
inventional inventional additional inventional inventional inventional additional inventional inventional inventional
Wuyang Jung Pill Seung H. Kangho Tae Hyun Jungwon
Hao Kim Kang Lee Kim Suh