Method of making N-type thin film transistor
A method of making N-type semiconductor layer includes following steps. An insulating substrate is provided. A semiconductor carbon nanotube layer is formed on the insulating substrate. An MgO layer is deposited on the semiconductor carbon nanotube layer. A functional dielectric layer is located on the MgO layer. A source electrode and drain electrode are formed to electrically connect the semiconductor carbon nanotube layer. A gate electrode is formed on the functional dielectric layer.
HON HAI PRECISION INDUSTRY CO., LTD. Tsinghua University
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Qun-Qing Yuan-Hao Guan-Hong Shou-Shan
Li Jin Li Fan