Sughrue Mion, PLLC
Semiconductor probe with high resolution resistive tip having doping control layer and method of fabricating the same
A semiconductor probe and a method of fabricating the same are provided. The semiconductor probe includes a cantilever doped with first impurities, a resistive tip which protrudes from an end of the cantilever and doped lightly with second impurities, doping control layers formed on both sides of a protruding portion of the resistive tip, and first and second electrode regions formed under the doping control layers and doped heavily with the second impurities.
Samsung Electronics Co., Ltd. Seoul National University Industry Foundation
G G B
G11B G11B B82Y
inventional inventional inventional
Seung-bum Hyung-cheol Ju-hwan Jun-soo
Hong Shin Jung Kim