Haynes and Boone, LLP
Structure and method for bi-layer self-aligned contact
The present disclosure provides embodiments of a semiconductor structure having bi-layer self-aligned contact. The semiconductor structure includes a gate stack disposed on a semiconductor substrate and having a first height, a spacer disposed on a sidewall of the gate stack and having a second height greater than the first height, and a first etch stop layer disposed on a sidewall of the gate spacer and having a third height greater than the second height. The semiconductor structure further includes a first dielectric layer disposed over the gate stack and contacting the gate spacer and the first etch stop layer and a second dielectric layer disposed on the first dielectric layer and contacting the first etch stop layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Li-Zhen Lin-Yu Yu-Ming Cheng-Chi Chih-Hao Chia-Hao
Yu Huang Lin Chuang Wang Chang