Method of forming isolation structure
A method of forming an isolation structure includes the following steps. A substrate having a first trench, a second trench and a third trench is provided, wherein the opening of the third trench is larger than the opening of the second trench, and the opening of the second trench is larger than the opening of the first trench. A first oxide layer is formed to conformally cover the first trench, the second trench and the third trench by an atomic layer deposition (ALD) process. A second oxide layer fills up the first trench by an in-situ steam generation (ISSG) process.
Fujian Jinhua Integrated Circuit Co., Ltd. UNITED MICROELECTRONICS CORP.
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Hsuan-Tung Chia-Lung Wei-Hsin Yu-Cheng Po-Chun Yi-Wei
Chu Chang Liu Tung Chen Chen