Lee & Morse, P.C.
Semiconductor memory device including active pillars and gate pattern
Provided are a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device may include a plurality of active pillars projecting from a semiconductor substrate, a gate pattern disposed on at least a portion of each of the active pillars with a gate insulator interposed therebetween, and a conductive line disposed on each of the active pillars and below the corresponding gate pattern, the conductive line may be insulated from the semiconductor substrate and the gate pattern, wherein each of the active pillars may include a drain region above the corresponding gate pattern, a body region adjacent to the corresponding gate pattern, and a source region that is in contact with the conductive line below the gate pattern.
Samsung Electronics Co., Ltd.
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inventional inventional inventional
Yong-Hoon SungWoo Jung Ho Jongwook
Son Hyun Kim Lee