Haynes and Boone, LLP
Method and device to reduce dark current in image sensors
A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H
H01L H01L
inventional inventional
Han-Chi Shou-Gwo Chun-Yao Chung-Wei
Liu Wuu Ko Chang