Sterne, Kessler, Goldstein & Fox P.L.L.C.
Metal rail conductors for non-planar semiconductor devices
The present disclosure describes various non-planar semiconductor devices, such as fin field-effect transistors (finFETs) to provide an example, having one or more metal rail conductors and various methods for fabricating these non-planar semiconductor devices. In some situations, the one or more metal rail conductors can be electrically connected to gate, source, and/or drain regions of these various non-planar semiconductor devices. In these situations, the one or more metal rail conductors can be utilized to electrically connect the gate, the source, and/or the drain regions of various non-planar semiconductor devices to other gate, source, and/or drain regions of various non-planar semiconductor devices and/or other semiconductor devices. However, in other situations, the one or more metal rail conductors can be isolated from the gate, the source, and/or the drain regions these various non-planar semiconductor devices. This isolation prevents electrical connection between the one or more metal rail conductors and the gate, the source, and/or the drain regions these various non-planar semiconductor devices.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Kuo-Cheng Ru-Gun Chih-Liang Ching-Wei Lei-Chun Yi-Hsiung Wei-Hao Jiann-Tyng Chih-Ming Charles Chew-Yuen Chia-Hao
Ching Liu Chen Tsai Chou Lin Wu Tzeng Lai Young Chang