Muncy, Geissler, Olds & Lowe, P.C.
Light emitting diodes
An electric contact structure adopted for an LED comprises a nitride middle layer and an N-type metal electrode layer. The LED includes an N-type semiconductor layer, a light emission layer and a P-type semiconductor layer that are stacked to form a sandwich structure. The nitride middle layer is patterned and formed on the N-type semiconductor layer. The N-type metal electrode layer is formed on the nitride middle layer and prevented from being damaged by diffusion of the metal ions as the nitride middle layer serves as a blocking interface, thus electric property of the N-type semiconductor layer can be maintained stable. The nitride middle layer would not be softened and condensed due to long-term high temperature, thereby is enhanced adhesion. Moreover, the N-type metal electrode layer further can be prevented from peeling off, hence is increased the lifespan of the LED.
HIGH POWER OPTO. INC.
H H H H
H01L H01L H01L H01L
additional inventional additional additional
Wei-chun Wei-Yu Fu-Bang Chih-Sung
Tseng Yen Chen Chang