Keohane & D'Alessandro, PLLC
FinFET device and methods of fabrication
Embodiments of the present invention provide a novel method and structure for forming finFET structures that comprise standard cells. An H-shaped cut mask is used to reduce the number of fins that need to be removed, hence increasing the fin efficiency.
GLOBALFOUNDRIES Inc.
H H H H H H
H01L H01L H01L H01L H01L H01L
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Juhan Suresh Mahbub Yunfei Jongwook
Kim Venkatesan Rashed Deng Kye