Servilla Whitney LLC
Contact over active gate structure
Methods of forming and processing semiconductor devices which utilize a three-color hardmask process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts utilizing selective deposition of masks in a three-color process.
Applied Materials, Inc.
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inventional inventional additional inventional inventional
Wenhui Christopher S. Huixiong
Wang Ngai Dai