Katten Muchin Zavis Rosenman
Test method of mask for electron-beam exposure and method of electron-beam exposure
The present invention relates to a test method of a mask for electron-beam exposure which has a pattern region in which, by forming an electron-beam scatterer in prescribed shape on an electron-beam transmittable thin film, a scattering region with said electron-beam scatterer and a membrane region without said electron-beam scatterer are formed in prescribed pattern shape; wherein electron-beam irradiation onto a tested mask is carried out in a plurality of times, with each irradiated region subjected to irradiation at a time being scanned with the electron beam, and through detection of transmitted electrons which is made for each irradiated region subjected to irradiation at a time.
NEC Electronics Corporation
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H01J H01J H01J B82Y G03F G03F B82Y
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Hiroshi
Yamashita