J.C. Patents
Resistance type memory device
A resistance type memory device is provided. The resistance type memory device includes a first and a second conductors and a metal oxide layer. The metal oxide layer is disposed between the first and the second conductors, and the resistance type memory device is defined in a first resistivity. The resistance type memory device is defined in a second resistivity after a first pulse voltage is applied to the metal oxide layer. The resistance type memory device is defined in a third resistivity after a second pulse voltage is applied to the metal oxide layer. The second resistivity is greater than the first resistivity, and the first resistivity is greater than the third resistivity.
MACRONIX International Co., Ltd.
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Ming-Daou Chia-Hua Kuang-Yeu Erh-Kun
Lee Ho Hsieh Lai