Method for tuning metal gate work function before contact formation in fin-shaped field effect transistor manufacturing process
The present invention provides a method for metal gate work function tuning before contact formation in a fin-shaped field effect transistor (FinFET), where in the method comprises the following steps. (S1) providing a substrate having a metal gate structure on a side of the substrate, (S2) forming a titanium nitride (TiN) layer on the side of the substrate, and (S3) performing a gate annealing to tune work function of the metal gate structure.
UNITED MICROELECTRONICS CORPORATION
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Ching-Yun Hsiang-Chieh Yun Tzu Nien-Ting Fang-Yi Kuo-Chih Shih-Min Yang-Ju Yen-Chen
Chang Yen Chang Ho Liu Lai Chou Lu Chen