McDermott Will & Emery LLP
Plasma doping method with gate shutter
In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.
Panasonic Corporation
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Cheng-Guo Bunji Katsumi Tomohiro Yuichiro Hiroyuki Ichiro
Jin Mizuno Okashita Okumura Sasaki Ito Nakayama