Method of controlling etching process for forming epitaxial structure
A method of controlling an etching process for forming an epitaxial structure includes the following steps. A substrate having a gate thereon is provided. A spacer is formed on the substrate beside the gate to define the position of the epitaxial structure. A thickness of the spacer is measured. The etching time of a first etching process is set according to the thickness. The first etching process is performed to form a recess in the substrate beside the spacer. The epitaxial structure is formed in the recess.
United Microelectronics Corp.
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Home-Been Yu-Hsiang Yen-Liang Chung-Fu Pei-Yu Chia-Jong
Cheng Hung Wu Chang Chou Liu