Haynes and Boone, LLP
Crosstalk improvement through P on N structure for image sensor
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; a photo-sensitive structure formed in the semiconductor layer; a multi-layer interconnect (MLI) structure disposed on the semiconductor layer; a color filter disposed on the MLI structure and disposed above the photo-sensitive structure; and a microlens disposed over the color filter and disposed above the photo-sensitive structure.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Shou-Gwo Chun-Yao Han-Chi Chung-Wei
Wuu Ko Liu Chang