Birch, Stewart, Kolasch & Birch, LLP
Structure and formation method of semiconductor device with resistive element
Structures and formation methods of a semiconductor device are provided. The semiconductor device structure includes a semiconductor substrate and a first dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive feature in the first dielectric layer and a second dielectric layer over the first dielectric layer. The semiconductor device structure further includes a resistive element electrically connected to the conductive feature. A first portion of the resistive element is over the dielectric layer, and a second portion of the resistive element extends towards the conductive feature.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Wen-Sheh Hsiu-Wen Chii-Ping Yu-Hsiang
Huang Hsueh Chen Chen