NSIP Law
Semiconductor device and manufacturing method thereof
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes: a deep trench in a substrate; a sidewall insulating film on a side surface of the deep trench; an interlayer insulating film on the sidewall insulating film; and an air gap in the interlayer insulating film.
MagnaChip Semiconductor, Ltd.
H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L
inventional additional inventional additional additional inventional additional inventional
Jeong Gyu Meng An Woo Sig Hyun Tae Pil Seung Hyung Suk Da Soon Gil Ho
Park Jung Min Jung Kang Choi Lee Lee