IP & T Group LLP
Semiconductor device and manufacturing method thereof
A semiconductor device includes a first semiconductor layer, a second semiconductor layer spaced apart from the first semiconductor layer and disposed on the first semiconductor layer, a gate stack structure disposed on the second semiconductor layer, a third semiconductor layer positioned between the first and second semiconductor layers, and a channel pillar passing through the gate stack structure, the second semiconductor layer and the third semiconductor layer and extending into the first semiconductor layer.
SK hynix Inc.
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Seung Cheol Kang Sik Bong Hoon
Lee Choi Lee