Jacobson Holman PLLC
Method for manufacturing semiconductor memory device using hemispherical grain silicon
A semiconductor device for use in a memory cell including an active matrix provided with a silicon substrate, at least one transistor formed on the silicon substrate, a number of bottom electrodes formed over the transistors, a plurality of conductive plugs to electrically connect the bottom electrodes to the transistors, respectively, and an insulating layer formed around the conductive plugs. In the device, by carrying out a carbon treatment to top surface portions of the bottom electrode structure, it is possible to secure enough space to prevent the formation of bridges between the bottom electrodes.
Hyundai Electronics Industries Co., Ltd.
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additional inventional additional additional
Dong-Hwan Se-Min Keun-Il
Kim Lee Lee