Dickinson Wright PLLC
Planarization method using anisotropic wet etching
A planarization method using anisotropic etching can be applied to planarize an insulating layer with an uneven surface on a substrate. H2SO4, H3PO4, HF and H2O are mixed to form an etching solution. The substrate is placed into the etching solution to make the etching solution pass the surface of the insulating layer at a flow rate to etch the insulating layer. After a period of etching time, the insulating layer with a more planar surface can be obtained.
Macronix International Co., Ltd.
H H
H01L H01L
inventional additional
Wen-Bin Huei-Huang Chun-Pei Samuel C. Ching-Yu
Tsai Chen Wu Pan Chang