Gates & Cooper LLP
Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same
A method of obtaining a hexagonal würtzite type epitaxial layer with a low impurity concentration of alkali-metal by using a hexagonal würtzite substrate possessing a higher impurity concentration of alkali-metal, wherein a surface of the substrate upon which the epitaxial layer is grown has a crystal plane which is different from the c-plane.
The Regents of the University of California
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Makoto Shin-Ichiro Derrick S. Shuji James S. Steven P.
Saito Kawabata Kamber Nakamura Speck DenBaars