Kilpatrick Townsend & Stockton LLP
Method of fabricating a semiconductor device including ion implantation at a tilt angle in exposed regions
A method of fabricating a semiconductor device includes forming a mask pattern for exposing a region of a semiconductor substrate. Dopant ions are implanted into the exposed region of the semiconductor substrate at a tilt angle of approximately 4.4° to 7°.
Hynix Semiconductor Inc.
H H H
H01L H01L H01L
inventional additional additional
Min Yong Yong Soo
Lee Jung