Slater & Matsil, L.L.P.
MOS devices with improved source/drain regions with SiGe
A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; a SiGe region in the semiconductor substrate and adjacent the gate stack, wherein the SiGe region has a first atomic percentage of germanium to germanium and silicon; and a silicide region over the SiGe region. The silicide region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is substantially lower than the first atomic percentage.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Win Yu-En Percy Chun-Chieh Wei-Hua Chung Li Chi-Feng Kishimoto
Hung Chang Lin Hsu Chang Cheng Ko