Haynes and Boone, LLP
Lithography process and material for negative tone development
The present disclosure provides resist rinse solutions and corresponding lithography techniques that achieve high pattern structural integrity for advanced technology nodes. An example lithography method includes forming a resist layer over a workpiece, exposing the resist layer to radiation, developing the exposed resist layer using a developer that removes an unexposed portion of the exposed resist layer, thereby forming a patterned resist layer, and rinsing the patterned resist layer using a rinse solution. The developer is an organic solution, and the rinse solution includes water.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Wei-Han Ching-Yu Chien-Wei
Lai Chang Wang