Maschoff Brennan
Programming method and reading method for memory device
A method, includes: applying a read voltage at a first read voltage level to read a memory cell for detecting a resistance level of the memory cell; applying the read voltage at a second read voltage level, different from the first read voltage level, to read the memory cell for determining a waveform type has been utilized to program the memory cell; recognizing data bits stored in the memory cell. The data bits stored in the memory cell comprise a first data bit and at least one second data bit. The first data bit is recognized according to the waveform type and is irrelevant with the resistance level. The at least one second data bit is recognized according to the resistance level and is irrelevant with the waveform type. A device is also disclosed herein.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Yu-Sheng Jau-Yi
Chen Wu