Sughrue Mion, PLLC
Variable resistance memory device
A variable resistance memory device includes: a substrate including a peripheral region and a core region, the core region including a far region spaced apart from the peripheral region and a near region between the far region and the peripheral region; first conductive lines disposed on the substrate and extending in a first direction; second conductive lines disposed on the first conductive lines and extending in a second direction intersecting the first direction, and memory cells disposed between the first and second conductive lines on the core region. The memory cells include a near memory cell disposed on the near region, and a far memory cell disposed on the far region, wherein a resistance or threshold voltage of the near memory cell, controlling connection of each of the memory cells to a corresponding one of the second conductive lines, is different from that of the far memory cell.
SAMSUNG ELECTRONICS CO., LTD.
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Masayuki Jinchan Junghyun You-Jin
Terai Yun Cho Jung