Leydig, Voit & Mayer, Ltd.
Method for manufacturing nitride semiconductor stacked structure and semiconductor light-emitting device
A nitride semiconductor stacked structure having good working efficiency includes a p-type nitride semiconductor layer of low resistance, which is formed from an organometallic compound, compounds including Group V elements, including ammonia and a hydrazine derivative, and a p-type impurity material on a substrate. The p-type nitride layer has a carbon concentration not higher than 1×1018 cm−3.
Mitsubishi Electric Corporation
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Akihito Masayoshi Nobuyuki
Ohno Takemi Tomita