Anova Law Group, PLLC
Semiconductor device and fabrication method thereof
A semiconductor device and a method for fabricating the semiconductor device are provided. The method includes providing a base substrate including a first region and a second region; and forming a first doped region in the first region, and a second doped region in the second region. The second doped region is doped with blocking ions. The method also includes forming a first metal layer on a surface of the first doped region and on a surface of the second doped region; and forming a second metal layer on a surface of the first metal layer. The second metal layer is made of a material different from the first metal layer. Further, the method includes forming a first metal silicide layer and a second metal silicide layer by performing an annealing process. The blocking ions block atoms of the second metal layer from diffusing into the second metal silicide layer.
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
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Yong
Li