Myers Bigel Sibley & Sajovec
Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiation
Methods of manufacturing non-volatile memory devices that can reduce or prevent loss of charges stored in a charge storage layer and/or that can improve charge storage capacity by neutral beam irradiation of an insulating layer are disclosed. The methods include forming a tunneling insulating layer on a substrate, forming a charge storage layer on the tunneling insulating layer, forming a blocking insulating layer on the charge storage layer, irradiating the blocking insulating layer and/or the tunneling insulating layer with a neutral beam, and forming a gate conductive layer on the blocking insulating layer.
Samsung Electronics Co., Ltd.
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inventional inventional inventional inventional
Chung-woo Chan-jin Do-haing Sung-wook Yung-hee Jeong-hee Jin-seok Choong-man Soo-doo
Kim Park Lee Hwang Lee Han Lee Lee Chae