Slater & Matsil, L.L.P.
Low form voltage resistive random access memory (RRAM)
The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a non-planar portion, a resistive material layer conformally covering the non-planar portion of the bottom electrode; and, a top electrode on the resistive material layer. The via portion of the bottom electrode is embedded in a first RRAM stop layer. The non-planar portion of the bottom electrode has an apex and is centered above the via portion.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chin-Chieh Kuo-Chi Hsia-Wei Ching-Pei Chih-Yang Yu-Wen Wen-Ting
Yang Tu Chen Hsieh Chang Liao Chu