Sughrue Mion, PLLC
Memory device
The present invention relates to a memory device including a substrate and a lower electrode, buffer layer, seed layer, Magnetic Tunnel Junction (MTJ), capping layer, synthetic antiferromagnetic layer, and upper electrode formed on the substrate.
Industry-University Cooperation Foundation Hanyang University
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G11C H01L H01L H01L G11C H01L H01L G11C
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Jea Gun Song Hwa Junli Seung Eun Du Yeong Jin Young
Park Hong Li Lee Lee Choi