Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Solid-state imaging device comprising a signal storage section including a highly doped area
Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.
Kabushiki Kaisha Toshiba
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H01L H01L H01L H04N
inventional inventional inventional inventional
Nagataka Hiroshige Ikuko Tetsuya Hirofumi Hisanori
Tanaka Goto Inoue Yamaguchi Yamashita Ihara