Fish & Richardson P.C.
Semiconductor device comprising transistor including oxide semiconductor
An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.
Semiconductor Energy Laboratory Co., Ltd.
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Jun Kiyoshi Shunpei
Koyama Kato Yamazaki