Ladas & Parry LLP
Thin film transistor, fabrication method thereof, repair method thereof and array substrate
Embodiments of the present disclosure disclose a thin film transistor, a fabrication method thereof, a repair method thereof, and an array substrate. The thin film transistor comprises a gate electrode (12), a gate insulating layer (13), an active layer (14), a source electrode (16) and a drain electrode (17). The source electrode (16) comprises a first source electrode portion (161) and a second source electrode portion (162) independent from each other, the first source electrode portion (161) and the second source electrode portion (162) are electrically connected with the active layer (14), respectively; and/or, the drain electrode (17) comprises a first drain electrode portion (171) and a second drain electrode portion (172) independent from each other, the first drain electrode portion (171) and the second drain electrode portion (172) are electrically connected with the active layer (14), respectively.
BEIJING BOE DISPLAY TECHNOLOGY CO., LTD. BOE TECHNOLOGY GROUP CO., LTD.
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inventional inventional inventional inventional
Liping Kiyong Jeong Hun Chaoqin
Luo Kim Rhee Xu