Lee & Morse, P.C.
Method of forming a metal layer pattern having a nanogap and method of manufacturing a molecule-sized device using the same
A method of patterning a metal layer includes forming a first mask on a surface of the metal layer, the first mask having an opening through the first mask that exposes the metal layer, and forming a nanogap in the exposed metal layer using an ion beam directed through the opening. The first mask limits a lateral extent of the ion beam, and the nanogap has a width that is less than a width of the opening.
Samsung Electronics Co., Ltd.
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Ju-Hyun Dong-Won Chang-Hoon Yang-Kyu Dong-Gun Sung-Young
Kim Kim Kim Choi Park Lee