Fliesler, Dubb, Meyer & Lovejoy LLP
EEPROM cell using P-well for tunneling across a channel
 An EEPROM cell is described that is programmed and erased by electron tunneling across an entire portion of separate transistor channels. The EEPROM cell has three transistors formed in a P-well of a semiconductor substrate. The three transistors are a tunneling transistor (NMOS), a sense transistor (NMOS) and a read transistor (NMOS). Electron tunneling occurs to program the EEPROM cell through a sense tunnel oxide layer upon incurrence of a sufficient voltage potential between a floating gate and the sense channel. Electron tunneling also occurs to erase the EEPROM cell through a tunnel oxide layer upon incurrence of a sufficient voltage potential between the floating gate and the tunneling channel. 
Vantis Corporation
H H G H
H01L H01L G11C H01L
inventional inventional inventional inventional
Xiao-Yu Sunil D.
Li Mehta