Patterson & Sheridan, L.L.P.
Thin-film variable metal-oxide-semiconductor (MOS) capacitor for passive-on-glass (POG) tunable capacitor
Certain aspects of the present disclosure provide a variable transistor-based capacitive element implemented on a glass or dielectric substrate. Such a variable transistor-based capacitive element may be suitable for use as a tunable capacitor in a passive-on-glass (POG) device, for example. One example device having a tunable capacitance generally includes a glass or dielectric substrate and a transistor disposed above the glass or dielectric substrate. The transistor has a gate region, a drain region, and a source region, wherein a capacitance of the transistor is configured to vary based on a voltage between the gate region and the drain region.
QUALCOMM Incorporated
H H H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional additional additional inventional inventional additional inventional inventional inventional inventional inventional inventional additional inventional inventional inventional
Xia Bin Kai
Li Yang Liu