Method for fabricating strained-silicon CMOS transistors
A semiconductor substrate having a first active region and a second active region for fabricating a first transistor and a second transistor is provided. A first gate structure and a second gate structure are formed on the first active region and the second active region and a first spacer is formed surrounding the first gate structure and the second gate structure. A source/drain region for the first transistor and the second transistor is formed. The first spacer is removed from the first gate structure and the second gate structure and a cap layer is disposed on the first transistor and the second transistor and the cap layer covering the second transistor is removed thereafter. An etching process is performed to form a recess in the substrate surrounding the second gate structure. An epitaxial layer is formed in the recess and the cap layer is removed from the first transistor.
United Microelectronics Corp.
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Tzer-Min Wen-Han Jing-Chang Shyh-Fann Tzyy-Ming Nien-Chung Kun-Hsien Li-Shian Cheng-Tung
Shen Hung Wu Ting Cheng Li Lee Jeng Huang