WPAT, PC
Method for patterning semiconductor structure
A method for patterning a semiconductor structure is provided. The method comprises following steps. A first mask defining a first pattern in a first region and a second pattern in a second region adjacent to the first region is provided. The first pattern defined by the first mask is transferred to a first film structure in the first region, and the second pattern defined by the first mask is transferred to the first film structure in the second region. A second film structure is formed on the first film structure. A second mask defining a third pattern in the first region is provided. At least 50% of a part of the first region occupied by the first pattern defined by the first mask is identical with a part of the first region occupied by the third pattern defined by the second mask.
United Microelectronics Corp.
H H
H01L H01L
additional inventional
Ming-Jui Ping-I Ting-Cheng Chia-Wei
Chen Hsieh Tseng Huang