Michael J. Chang, LLC
Cyclic selective deposition for tight pitch patterning
Techniques for tight pitch patterning of fins using a cyclic selective deposition process are provided. In one aspect, a method of patterning fins in a wafer includes: forming at least one mandrel on the wafer; forming alternating layers of a first dielectric and a second dielectric alongside the at least one mandrel; removing the at least one mandrel; removing either the first dielectric or the second dielectric; and patterning the fins in the wafer using whichever of the first dielectric or the second dielectric that remains as fin hardmasks. A finFET device and method for forming a finFET device are also provided.
International Business Machines Corporation
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Dexin Kangguo Zhenxing Juntao
Kong Cheng Bi Li