Mills & Onello, LLP
Method of fabricating CMOS transistor and CMOS transistor fabricated thereby
A CMOS transistor includes first and second conductivity type MOS transistors. The first conductivity type MOS transistor includes elevated source and drain regions which abut a channel region in a semiconductor substrate and which are formed by elevated epitaxial layers, each including a first epitaxial layer formed in a first recessed of the semiconductor substrate and a second epitaxial layer formed on the first epitaxial layer and extending to a level that is above an upper surface of the semiconductor substrate. The second conductivity type MOS transistor includes recessed source and drain regions which abut a channel region of the semiconductor substrate and which are formed by recessed epitaxial layers, each including a first epitaxial layer formed in a second recess of the semiconductor substrate and a second epitaxial layer formed in the second recess on the first epitaxial layer.
Samsung Electronics Co., Ltd.
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Tetsuji Hwa-sung Ho Seung-hwan Dong-suk
Ueno Rhee Lee Lee Shin