Marshall, Gerstein & Borun
Method for forming a storage node of a capacitor
A method for forming the storage node of a capacitor which simplifies its process, and improves the electrical characteristics of semiconductor products by forming the storage node of a capacitor with no stepped portion between cell regions and peripheral circuit regions necessary for memory storage of semiconductor products of the next generation to which a fine line width is applied, and, at the same time, forming a guard ring for dividing the cell regions and the peripheral circuit regions.
Hynix Semiconductor, Inc.
H H H H
H01L H01L H01L H01L
inventional additional additional additional
Wan-gie Chan-bae Kee-jeung Seung-hyuk Seoung-wook
Lee Kim Lee Lee Lee