Ladas & Parry
Method for estimating capacitance of deep trench capacitors
A method for estimating capacitance of deep trench capacitor in a substrate. After a photoresist layer used to define the region of the lower electrode is formed on an oxide layer doping with a conducting type dopant, the height difference of the photoresist layer between the memory cell array area and the supporting area is measured. The radicand of the height difference is directly proportional to a capacitance of a capacitor to-be-formed in the trenches.
NÃƒÂ¤naya Technology Corporation
H H G
H01L H01L G01R
inventional additional additional
Ying Huan Yu-Pi Hui Min Tzu-Ching
Chuang Lee Mao Tsai