Brinks Gilson & Lione
Semiconductor resistor and manufacturing method therefor
The present disclosure relates to a technical field of semiconductors and discloses a semiconductor resistor and a manufacturing method therefor. The method includes: providing a substrate structure, where the substrate structure includes a substrate having a well region and a fin structure in the well region, and where the fin structure includes a semiconductor fin and an insulating layer at a surface of the semiconductor fin; forming a first dummy gate structure and a second dummy gate structure at two end portions of the fin structure, respectively; forming a mask layer having a first opening and a second opening, where the first opening exposes the first dummy gate structure and a part of the fin structure that abuts against the first dummy gate structure, and the second opening exposes the second dummy gate structure and a part of the fin structure that abuts against the second dummy gate structure; etching an exposed part of the fin structure that abuts against the first dummy gate structure using the mask layer as a mask and etching an exposed part of the fin structure that abuts against the second dummy gate structure using the mask layer as a mask, so as to form a first recess and a second recess; removing the mask layer, and epitaxially growing a semiconductor material in the first recess and the second recess, so as to respectively form a first contact area and a second contact area; and forming a first contact connected to the first contact area and a second contact connected to the second contact area.
Semiconductor Manufacturing International (Shanghai) Corporation Semiconductor Manufacturing International (Beijing) Corporation
H H H H H H
H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional
Yong
Li