Konrad, Raynes & Victor, LLP
Methods for manufacturing semiconductor devices and semiconductor devices having trench isolation regions
A semiconductor device having trench isolation regions in which leaks are suppressed may be formed using the following steps. (a) Forming a trench 32 in a semiconductor layer 12; (b) forming a dielectric layer 40 that fills the trench 32; and (c) conducting a thermal treatment of the dielectric layer 40, wherein the thermal treatment is conducted at temperatures of 1050° C. or higher.
Seiko Epson Corporation
H
H01L
inventional
Masahiro
Takeuchi