Cantor Colburn LLP
Vertical transport FET devices having a sacrificial doped layer
Methods of fabrication and semiconductor structures includes vertical transport field effect transistors (VTFETs) including a top source/drain extension formed with a sacrificial doped layer. The sacrificial doped layer provides the doping source to form the extension and protects the top of the fin during fabrication so as to prevent thinning, among other advantages.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Choonghyun Shogo Juntao Kangguo
Lee Mochizuki Li Cheng