Slater Matsil, LLP
Semiconductor device and method
A semiconductor device and method of manufacture comprise placing an etch stop layer of a material such as aluminum oxide over a conductive element, placing a dielectric layer over the etch stop layer, and placing a hardmask of a material such as titanium nitride over the dielectric layer. Openings are formed to the etch stop layer, the hardmask material is selectively removed, and the openings are then the material of the etch stop layer is then selectively removed to extend the openings through the etch stop layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chun-Hung Yu-Li Chun-Li Yen-Chiu Nai-Chia
Chao Cheng Chou Kuo Chen