Harness, Dickey & Pierce, P.L.C.
Transistors and methods of manufacturing the same
Transistors and methods of manufacturing the same may include a gate on a substrate, a channel layer having a three-dimensional (3D) channel region covering at least a portion of a gate, a source electrode over a first region of the channel layer, and a drain electrode over a second region of the channel layer.
SAMSUNG ELECTRONICS CO., LTD.
H H H H Y H H H H H H H
H01L H01L H01L H01L Y02E H01L H01L H01L H01L H01L H01L H01L
inventional inventional additional inventional additional inventional additional additional additional additional additional additional
Yong-sung Chang-seung Joo-ho Jun-seong Chang-youl
Kim Lee Lee Kim Moon