Magnetoresistive random access memory with particular conductive plug and method of manufacturing the same
A magnetoresistive random access memory (MRAM) is provided in the present invention, including a conductive plug with a protruding portion extending outwardly on one side and a notched portion concaving inwardly on the other side of the upper edge of conductive plug, and a memory cell with a bottom electrode electrically connecting with the conductive plug, a magnetic tunnel junction (MTJ) on the bottom electrode, and a top electrode on the magnetic tunnel junction, wherein the bottom surface of memory cell completely overlaps the top surface of conductive plug.
UNITED MICROELECTRONICS CORP.
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Yu-Ping Hung-Yueh Hung-Chan
Wang Chen Lin