Ditthavong & Steiner, P.C.
Introducing self-aligned dopants in semiconductor fins
A method of introducing self-aligned dopants in semiconductor fins and the resulting device are provided. Embodiments include providing semiconductor fins on first and second portions of a substrate; forming a BSG layer on side surfaces of the semiconductor fins on the first portion of the substrate; forming a first SiN layer on the BSG layer; forming a high quality oxide layer over an upper surface of the substrate, the first SiN layer and side surfaces of the semiconductor fins on the second portion of the substrate; forming a PSG layer over the high quality oxide layer on the second portion of the substrate and side surfaces of the semiconductor fins on the second portion of the substrate; and forming a second SiN layer over the high quality oxide layer and the PSG layer.
GLOBALFOUNDRIES INC.
H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional
Haigou Jinping Xintuo
Huang Liu Dai