Studebaker & Brackett PC
Semiconductor wafer, semiconductor device, and method for producing semiconductor device
A semiconductor wafer includes a silicon carbide substrate having a first carrier concentration, a carrier concentration transition layer, and an epitaxial layer provided on the carrier concentration transition layer, the epitaxial layer having a second carrier concentration, and the second carrier concentration being lower than the first carrier concentration. The carrier concentration transition layer has a concentration gradient in the thickness direction. The carrier concentration decreases as the film thickness increases from an interface between a layer directly below the carrier concentration transition layer and the carrier concentration transition layer, and the carrier concentration decreases at a lower rate of decrease as the film thickness of the carrier concentration transition layer increases. The carrier concentration of the carrier concentration transition layer has the concentration gradient that falls within a predetermined concentration range lying between a first concentration gradient condition and a second concentration gradient condition.
Mitsubishi Electric Corporation
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Yoichiro Yasuhiro Masashi Takashi Akihito Takuma Kenichi
Mitani Kimura Sakai Kanazawa Ohno Mizobe Hamano