Nixon Peabody LLP
Semiconductor film, semiconductor device and method of their production
A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, typically, an amorphous silicon film having an amorphous structure is obtained based on the plasma CVD method as a step of forming a gettering site, by using a monosilane, a rare gas element and hydrogen as starting gases, the film containing the rare gas element at a high concentration or, concretely, at a concentration of 1×1020/cm3 to 1×1021/cm3 and containing fluorine at a concentration of 1×1015/cm3 to 1×1017/cm3.
Semiconductor Energy Laboratory Co., Ltd.
C H C H H H H C H H H C H H
C23C H01L C23C H01L H01L H01L H01L C30B H01L H01L H01L C30B H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Noriyoshi Masato Hideto Mitsuhiro Taketomi
Suzuki Yonezawa Ohnuma Ichijo Asami