Sughrue Mion, PLLC
Photodetector device and method for manufacturing the same
A photodetector device includes a doped semiconductor substrate. A first intrinsic semiconductor material layer, a main reflector, a second intrinsic semiconductor material layer, an upper semiconductor material layer, which is doped the opposite as the substrate, are formed in succession on the semiconductor substrate. An upper electrode is formed on and electrically connected with the upper semiconductor layer, and a lower electrode is electrically connected to the semiconductor substrate. One of the intrinsic semiconductor layers is relatively thin to absorb incident light, while the other is relatively thick. The photodetector device, a p-i-n photodetector, has an I region including the intrinsic semiconductor layers with different thicknesses, and a main reflector therebetween. The thickness of the entire I region can be increased with a reduced transit distance for holes. Thus, low driving voltage and high sensitivity to a high frequency optical signal requirements can be realized without reducing the size of the photo-receiving area.
Samsung Electronics Co., Ltd.
H
H01L
inventional
Woong-lin Dong-hoon Jun-young
Hwang Chang Kim