F. Chau & Associates, LLC
Semiconductor device and fabricating method thereof
The semiconductor device includes a substrate, a trench formed in the substrate, a gate insulation layer conformally formed on the inner surface of the trench, buried gate electrodes formed on the gate insulation layer and filling a portion of the trench, and a capping layer formed on the buried gate electrodes and filling the trench. The buried gate electrode include a first gate electrode and a second gate electrode surrounding a bottom portion of the first gate electrode, and an air gap is provided between a top portion of the first gate electrode and the gate insulation layer.
SAMSUNG ELECTRONICS CO., LTD.
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Se-Keun Seol-Min Joon-Seok Hyeoung-Won Dae-Hyun
Park Yi Moon Seo Moon