IP & T Group LLP
Variable resistance memory device and method for fabricating the same
A variable resistance memory device includes active regions defined by an isolation layer in a semiconductor substrate, trenches in the semiconductor substrate, which extend in a direction crossing the active regions, junction regions formed in the active regions on both sides of the trenches, and variable resistance patterns interposed between the word lines and the junction regions.
SK Hynix Inc.
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Seung-Hwan Jae-Yun Seok-Pyo
Lee Yi Song