Metal-oxide-metal structure with improved capacitive coupling area
A stacked metal-oxide-metal (MOM) capacitor structure and method of forming the same to increase an electrode/capacitor dielectric coupling area to increase a capacitance, the MOM capacitor structure including a plurality of metallization layers in stacked relationship; wherein each metallization layer includes substantially parallel spaced apart conductive electrode line portions having a first intervening capacitor dielectric; and, wherein the conductive electrode line portions are electrically interconnected between metallization layers by conductive damascene line portions formed in a second capacitor dielectric and disposed underlying the conductive electrode line portions.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H H H
H01L H01L H01L H01L
additional inventional additional inventional
Ming-Chu Chao-Chi Chen Cheng
King Chin Chou