Gibb I.P. Law Firm, LLC
Field effect transistor
Disclosed are embodiments of a field effect transistor that incorporates an elongated semiconductor body with a spiral-shaped center channel region wrapped one or more times around a gate and with ends that extend outward from the center region in opposite directions away from the gate. Source/drain regions are formed in the end regions by either doping the end regions or by biasing a back gate to impart a preselected Fermi potential on the end regions. This disclosed structure allows the transistor size to be scaled without decreasing the effective channel length to the point where deleterious short-channel effects are exhibited. It further allows the transistor size to be scaled while also allowing the effective channel length to be selectively increased (e.g., by increasing the number of times the channel wraps around the gate). Also, disclosed are embodiments of an associated method of forming the transistor.
International Business Machines Corporation
H H H H H H B H H Y H H
H01L H01L H01L H01L H01L H01L B82Y H01L H01L Y10S H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional additional additional inventional inventional
Edward J. Jia Andres
Nowak Chen Bryant