McClure, Qualey & Rodack, LLP
Semiconductor device including dummy via anchored to dummy metal layer
A semiconductor device and a method of manufacture thereof are provided. The method for manufacturing the semiconductor device includes forming a first dielectric layer on a substrate. Next, forming a first dummy metal layer on the first dielectric layer. Then, forming a second dielectric layer over the first dummy metal layer. Furthermore, forming an opening in the second dielectric layer and the first dummy metal layer. Then, forming a dummy via in the opening, wherein the dummy via extending through the second dielectric layer and at least partially through the first dummy metal layer. Finally, forming a second dummy metal layer on the second dielectric layer and contact the dummy via.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Yu-Ching Tzu-Li Kuo-Yen Hsin-Chun Jian-Hong Yih-Ching
Lee Lee Liu Chang Lin Wang