Birch, Stewart, Kolasch & Birch, LLP
Semiconductor device structures and methods for manufacturing the same
A method for manufacturing a semiconductor device structure is provided. The method includes providing a base substrate and forming a buffer layer on the base substrate. The method also includes forming a patterned silicon layer on the buffer layer. The patterned silicon layer has an opening to expose a portion of the buffer layer. The method further includes epitaxially growing a patterned channel layer and a patterned barrier layer on a top surface of the patterned silicon layer sequentially. In addition, the method includes forming a gate electrode on the patterned barrier layer.
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional additional additional inventional inventional inventional additional inventional additional inventional inventional inventional inventional inventional
Hsin-Chih Yu-Chieh Cheng-Wei
Lin Chou Chou