Oblon, McClelland, Maier & Neustadt, L.L.P.
Pattern forming method
A pattern-forming method includes forming a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a base component, and a crosslinking agent. A content of hydrogen atom in the resist underlayer film is from 0 to 50 atom %. The crosslinking agent has a partial structure represented by a following general formula (i). X represents an oxygen atom, a sulfur atom, or —NR—. R represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms. n1 is an integer from 1 to 6. R1 represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms.
JSR CORPORATION
H H H G G G B H G G H
H01L H01L H01L G03F G03F G03F B44C H01L G03F G03F H01L
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Shin-ya Shin-ya Takanori
Nakafuji Minegishi Nakano