Spensley Horn Jubas & Lubitz
Focused ion beam apparatus and method
 A sample semiconductor device which is processed and/or observed with the focused liquid metal ion beam can be returned again to the manufacturing process in this invention. The metal ions used in this apparatus are generally Ga ions. Ga ions contaminate a semiconductor device and a semiconductor manufacturing apparatus by auto-doping. An area which is irradiated with a focused liquid metal ion is doped by the metal ions which are subsequently removed by irradiation with a gas ion beam or covered by hard fusing metal. 
Seiko Instruments Inc.
H H H H H
H01L H01J H01J H01J H01J
inventional inventional additional inventional additional
Tatsuya Toshiaki
Adachi Fujii