Lee & Morse, P.C.
Semiconductor light emitting device
There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
SAMSUNG ELECTRONICS CO., LTD.
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Jin Bock Yu Seung Pun Jae
Lee Kim Choi