Method for smoothing polysilicon gate structures in CMOS devices
 There is provided a method for smoothing the surface of undoped polysilicon regions of a CMOS structure, primarily gate regions. A direct HPD-CVD argon sputter is used improve the surface roughness by a factor of more than 50%. The argon plasma sputter may be used either alone or in conjunction with a thin capping layer of oxide, nitride or oxynitride. The devices manufactured using the process exhibit excellent electrical characteristics and improved reliability compared to devices made using conventional manufacturing processes. 
Taiwan Semiconductor Manufacturing Company
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inventional inventional inventional
Shwangming Chu-Yun Chung-Long Syun-Ming
Jeng Fu Chang Jang