F. Chau & Associates, LLC
Light emitting device having insulation layer of varying thickness and manufacturing method thereof
A light emitting device includes a substrate. A thin film transistor is disposed on the substrate. A first electrode is connected to the thin film transistor. A second electrode at least partially overlaps the first electrode. A first partition wall is disposed between the first electrode and the second electrode. An insulating layer is disposed between the thin film transistor and the first electrode. The insulating layer includes a first part having a first thickness and a second part having a second thickness that is different than the first thickness. The second part of the insulating layer at least partially overlaps the first partition wall.
SAMSUNG DISPLAY CO., LTD.
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Yang-Ho Seon Hwa Jin-Su Jeong Min Jun Gi Bo Geon Jun
Jung Choi Byun Park Kim Jeon Chun