Haynes and Boone, LLP
Semiconductor device having a bonding pad and shield structure of different thickness
A semiconductor device includes a device substrate having a front side and a back side corresponding to a front side and a back side of the semiconductor device, a metal feature formed on the front side of the device substrate, a bonding pad disposed on the back side of the semiconductor device and in electrical communication with the metal feature, and a shield structure disposed on the back side of the device substrate in which the shield structure and the bonding pad have different thicknesses relative to each other.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Wen-De Dun-Nian Jeng-Shyan Shuang-Ji Cheng-Ying Jen-Cheng
Wang Yaung Lin Tsai Ho Liu