Harness, Dickey & Pierce, P.L.C.
E-mode high electron mobility transistor and method of manufacturing the same
According to an example embodiment, a high electron mobility transistor (HEMT) includes a substrate, a buffer layer on the substrate, a channel layer on the buffer layer, and a barrier structure on the channel layer. The buffer layer includes a 2-dimensional electron gas (2DEG). A polarization of the barrier structure varies in a region corresponding to a gate electrode. The HEMT further includes and the gate electrode, a source electrode, and a drain electrode on the barrier structure.
Samsung Electronics Co., Ltd.
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additional additional inventional inventional
Jong-seob Jae-joon Ki-ha In-jun Hyuk-soon Jai-kwang
Kim Oh Hong Hwang Choi Shin