Jianq Chyun IP Office
Method of fabricating a semiconductor device
A method of fabricating semiconductor device is provided. A transistor is formed on a substrate, and a metal silicide layer is formed on the surface of a gate conductor layer and a source/drain region. Next, a surface treatment process is performed to selectively form a protection layer on the surface of the metal silicide layer. Then, a spacer of the transistor is partially removed using the protection layer as a mask, so as to reduce the width of the spacer. Then, a stress layer is formed on the substrate.
United Microelectronics Corp.
H H H H H H H
H01L H01L H01L H01L H01L H01L H01L
additional additional additional additional inventional additional inventional
Chao-Ching Chun-Chieh Tzung-Yu
Hsieh Chang Hung