Maschoff Brennan
Method of fabricating a transistor having a drain pad with capping and silicide layers
A method includes forming a transistor over a substrate, wherein the transistor includes a source, a drain over the source, a semiconductor channel between the source and the drain, and a gate surrounding the semiconductor channel. A silicide layer is formed over the drain of the transistor. A capping layer is formed over the silicide layer. Portions of the capping layer and the silicide layer are removed to define a drain pad over the drain of the transistor.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional additional inventional inventional inventional additional inventional additional inventional inventional inventional inventional inventional
Ming-Shan Chia-Hao Chih-Hao Wai-Yi Cheng-Long
Shieh Chang Wang Lien Chen