Method of making a graded grown, high quality oxide layer for a semiconductor device
A method for making an oxide layer on a silicon substrate produces an oxide layer including graded portions with greatly reduced stress. The method includes growing a first oxide portion over a substrate by upwardly ramping the substrate to a first temperature lower than a SiO2 viscoelastic temperature. Thereafter a second oxide portion is grown between the first oxide portion and the silicon substrate by exposing the silicon substrate to an oxidizing ambient at a second temperature higher than the SiO2 viscoelastic temperature. The second oxide portion may have a thickness in a range of about 25 to 50% of a total thickness of the graded oxide layer.
Agere Systems Guardian Corp.
H H H H H C H H C H H H H H H H H
H01L H01L H01L H01L H01L C30B H01L H01L C30B H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional additional additional inventional inventional additional inventional inventional inventional
Pradip Kumar Sailesh Mansinh Yuanning
Roy Merchant Chen