Seed IP Law Group, PLLC
Single-electron memory device using an electron-hole coulomb blockade
 A single-electron memory device using the electron-hole Coulomb blockade is provided. A single-electron memory device in accordance with an embodiment of the present invention includes a plurality of quantum dot tunnel-junction arrays, a gate electrode, and source and drain electrodes. The plurality of quantum dot tunnel-junction arrays include at least two tunnel-junctions, are parallelly coupled to each other, and are well separated from each other to prevent single-electron tunneling between them. One of the plurality of quantum dot tunnel-junction arrays includes the gate electrode, and the voltage applied to the gate electrode can vary the number of electron-hole pairs. Each of the above-mentioned plurality of quantum dot tunnel-junction arrays includes separate source and drain electrodes where voltages are applied 
Electronics and Telecommunications Research Institute
B Y H G
B82Y Y10S H01L G11C
inventional additional inventional additional
Min Cheol Kyoung Wan Seong Jae
Shin Park Lee