Lee & Morse, P.C.
Semiconductor device and method for fabricating the same
A semiconductor device is provided. The semiconductor device includes a stack structure comprising insulating patterns and electrode structures alternately stacked on a substrate, and a vertical channel structure vertically penetrating the stack structure. Each of the electrode structures includes a conductive pattern having a first sidewall and a second sidewall opposite to the first sidewall, a first etching prevention pattern on the first sidewall, and a second etching prevention pattern on the second sidewall.
SAMSUNG ELECTRONICS CO., LTD.
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additional additional inventional inventional
Dongkyum Ji-Hoon Jintae Hyun-Jin Jung Ho Seulye SeungHyun
Kim Choi Noh Shin Kim Kim Lim