Maschoff Brennan
Method of fabricating deep trench isolation structure in image sensor and device thereof
A method includes forming a deep trench isolation structure on a substrate, the substrate having a back surface opposite to a front surface, the deep trench isolation structure opening toward the front surface. An oxide layer is formed on the front surface of the substrate and sidewalls and bottom of the deep trench isolation structure. The oxide layer on the front surface of the substrate is removed. A portion of the substrate at the opening of the deep trench isolation structure is removed and an epitaxial layer is formed on the substrate.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Jen-Cheng Wen-De Dun-Nian Alexander Hsin-Hung
Liu Wang Yaung Kalnitsky Chen