Jones Day
Structures and methods for ring oscillator fabrication
Structures and methods are provided for fabricating a ring oscillator including a plurality of stages. An example multi-layer structure includes a first device layer, a second device layer, and an inter-level connection structure. The first device layer includes a first transistor structure associated with a first stage of a ring oscillator. The second device layer is formed on the first device layer and includes a second transistor structure associated with a second stage of the ring oscillator. Further, the first inter-level connection structure includes one or more first conductive materials and is configured to electrically connect to the first transistor structure and the second transistor structure.
Taiwan Semiconductor Manufacturing Company Limited
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Ruey-Bin Shyh-An Chih-Hsien Chao-Chieh
Sheen Chi Chang Li