Armstrong, Westerman, Hattori, McLeland & Naughton
Hetero-bipolar transistor having a plurality of emitters
 A hetero-bipolar transistor includes a collector layer of a first conductivity type, a base layer of a second conductivity type provided on the collector layer, a first emitter structure of the first conductivity type provided on the base layer, and a second emitter structure of the first conductivity type and provided on the base layer, wherein the first and second emitter structures are doped with respect to the base layer, with a sufficiently high impurity concentration level such that a Zener breakdown occurs at the p-n junction formed between the base layer and the first or second emitters upon application of a reverse bias voltage. 
Fujitsu Limited
H
H01L
inventional
Kenichi Toshihiko Motomu
Imamura Mori Takatsu