Kilpatrick Townsend & Stockton LLP
Method of forming a semiconductor memory device
A method of forming a semiconductor memory device includes forming a tunnel insulating layer on a semiconductor substrate, and forming a silicon layer, including metal material, on the tunnel insulating layer. Accordingly, an increase in the strain energy of the conductive layer may be prohibited and, therefore, the growth of grains constituting the conductive layer may be prevented. Furthermore, a threshold voltage distribution characteristic and electrical properties of a semiconductor memory device may be improved.
Hynix Semiconductor Inc.
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H01L H01L
inventional additional
Jung Geun Eun Soo Seong Hwan
Kim Kim Myung