Anova Law Group, PLLC
Semiconductor structure having a repaired dielectric layer
A semiconductor structure is provided. The semiconductor structure includes a base substrate; and a first doped epitaxial layer and a second doped epitaxial layer in the base substrate. Each of the first and second doped epitaxial layers is corresponding to a different gate structure on the base substrate. The semiconductor structure further includes a repaired dielectric layer formed on and surrounding each of the first and second doped epitaxial layer; a metal layer on the repaired dielectric layer; an interlayer dielectric layer over the base substrate and covering tops of gate structures; and a conductive plug on the metal layer and through the interlayer dielectric layer.
Semiconductor Manufacturing International (Shanghai) Corporation SMIC New Technology Research and Development (Shanghai) Corporation
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Yong
Li