Fitzpatrick, Cella, Harper & Scinto
Thin-film transistor and process for its fabrication
A bottom gate type thin-film transistor constituted of at least a substrate, a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode. At an interface between the gate electrode and the gate insulating layer, the interface has a difference between hill tops and dale bottoms of unevenness in the vertical direction, of 30 nm or less.
Canon Kabushiki Kaisha
H H
H01L H01L
inventional inventional
Masafumi Kenji Ryo
Sano Takahashi Hayashi