Blakely, Sokoloff, Taylor & Zafman LLP
Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer
Semiconductor devices having germanium active layers with underlying parasitic leakage barrier layers are described. For example, a semiconductor device includes a first buffer layer disposed above a substrate. A parasitic leakage barrier is disposed above the first buffer layer. A second buffer layer is disposed above the parasitic leakage barrier. A germanium active layer is disposed above the second buffer layer. A gate electrode stack is disposed above the germanium active layer. Source and drain regions are disposed above the parasitic leakage barrier, on either side of the gate electrode stack.
Intel Corporation
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Niti Benjamin Gilbert Willy Han Wui Van H. Marko Ravi
Goel Chu-Kung Dewey Rachmady Then Le Radosavljevic Pillarisetty