Tutunjian & Bitetto, P.C.
Forming gates with varying length using sidewall image transfer
Semiconductor devices and methods of forming the same include forming mandrels on a first region and a second region of a gate layer. First spacers are formed on sidewalls of the mandrels. The mandrels are etched away to expose inner sidewalls of the first spacers. Second spacers are formed on sidewalls of the first spacers. First spacers in only the first region are etched away to expose inner sidewalls of the second spacers in the first region. The gate layer is etched using the remaining first spacers and the second spacers as a mask to form first gates in the first region and second gates in the second region. The first gates have a gate length than the second gates.
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Juntao Qintao Geng Kangguo
Li Zhang Wang Cheng