McDonnell Boehnen Hulbert & Berghoff LLP
Method for manufacturing a transistor device
A method for manufacturing a transistor device comprising a channel layer is disclosed. In one example, the method includes providing a substrate, epitaxially growing a strained layer on the substrate (defect free), epitaxially growing the channel layer on the epitaxially grown strained layer, and providing a gate structure on the channel layer. In this example, the method also includes selectively etching into the channel layer and at least partially in the epitaxially grown strained layer, thereby using the gate structure as a mask, and thereby creating a protrusion extending from the substrate. The protrusion may comprise a portion of the channel layer and at least an upper portion of the epitaxially grown strained layer, and may allow for elastic relaxation in the portions.
Samsung Electronics Co. Ltd. IMEC VZW
H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional additional inventional inventional inventional inventional additional
Geert Seung Hun
Eneman Lee