Workman, Nydegger & Seeley
Semiconductor structure including metal nitride and metal silicide
 The present invention relates to a semiconductor structure including metal nitride and metal silicide, where a metal silicide layer is formed upon an active area that is part of a junction in order to facilitate further miniaturization that is demanded and dictated by the need for smaller devices. A single PECVD process makes three distinct depositions. First, a metal silicide forms by the reaction: MHal+Si+H.sub.2.fwdarw.MSi.sub.x +HHal, where M represents a metal and Hal represents a preferred halogen or the like. Second, a metal nitride forms upon areas not containing Si by the reaction: MHal+N.sub.2 +H.sub.2.fwdarw.MN+HHal. Third, a metal nitride forms upon areas of evolving metal silicide due to a diffusion barrier effect that makes formation of the metal silicide self limiting. Ultimately, a metal nitride layer will be uniformly disposed in a substantially uniform composition covering all underlying structures upon a semiconductor substrate. The inventive method can be used to form a semiconductor structure having a semiconductive substrate with an electrically active region therein, where a structure projects from the semiconductive substrate adjacent to the electrically active region. A first metal silicide is upon the electrically active region and a second metal silicide is upon the structure. A metal nitride layer extends continuously from the first metal silicide to the second metal silicide. An electrically conductive metallization material is upon the metal nitride layer. 
Micron Technology, Inc.
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Weimin
Li