Techniques for forming low stress mask using implantation
A method may include depositing a mask layer on a substrate using physical vapor deposition, wherein an absolute value of a stress in the mask layer has a first value; and directing a dose of ions into the mask layer, wherein the absolute value of the stress in the mask layer has a second value, less than the first value, after the directing the dose.
Varian Semiconductor Equipment Associates, Inc.
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Tzu-Yu Deven Kyuha Hiro Lauren Edwin Takaski Ryuichi Nobuyuki Rajesh Somchintana
Liu Mittal Shim Ito Liaw Arevalo Shimizu Muira Sasaki Prasad Norasetthekul