Brinks Gilson & Lione
Field effect transistor structure comprising a stack of vertically separated channel nanowires
A field effect transistor structure comprises a source and a drain on a substrate, and a stack of n vertically separated channel nanowires isolated from the substrate and connecting the source and the drain, where n is an integer and 2≦n≦20. The channel nanowires collectively comprise at least two different thicknesses and/or at least two different dopant concentrations and/or at least two different semiconductor materials.
The Board of Trustees of the University of Illinois
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Xiuling Yi
Li Song