Moser, Patterson & Sheridan, LLP.
Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition
A method for trimming photoresist features on a semiconductor substrate in a processing system. The method utilizes a process gas mixture comprising a hydrocarbon gas, an oxygen gas and an inert gas. The critical dimension (CD) microloading of the dense and the isolated regions can be eliminated and the photoresist trimming rate can also be reduced to enable better critical dimension (CD) control.
Applied Materials, Inc.
H H G
H01L H01L G03F
inventional inventional inventional
Wei David
Liu Mui