Birch, Stewart, Kolasch & Birch, LLP
Split-gate flash memory cell having a floating gate situated in a concave trench in a semiconductor substrate
A split-gate flash memory cell is provided. The split-gate flash memory cell includes a semiconductor substrate having a source region and a drain region. The source region and the drain region are separated by a channel region. The split-gate flash memory cell also includes a concave trench in the semiconductor substrate, a floating gate dielectric lining the concave trench, and a floating gate situated in the concave trench on the floating gate dielectric. The floating gate has a convex bottom surface. The split-gate flash memory cell also includes an inter-gate dielectric on the floating gate, and a control gate on the inter-gate dielectric.
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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Chia-Hao Manoj Chih-Cherng Ankit
Lee Kumar Liao Kumar