Haynes and Boone, LLP
Structure and method for providing line end extensions for fin-type active regions
A semiconductor structure includes an isolation feature formed in the semiconductor substrate and a first fin-type active region. The first fin-type active region extends in a first direction. A dummy gate stack is disposed on an end region of the first fin-type active region. The dummy gate stack may overlie an isolation structure. In an embodiment, any recess such as formed for a source/drain region in the first fin-type active region will be displaced from the isolation region by the distance the dummy gate stack overlaps the first fin-type active region.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Hsin-Chih Ming-Feng Kuei-Liang Yi-Tang Kai-Tai Shao-Ming Chang-Yun Chih-Hao
Chen Shieh Lu Lin Chang Yu Chang Chang