Fleit Gibbons Gutman Bongini Bianco PL
Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation
A method for forming a semiconductor structure includes forming a strained silicon germanium layer on top of a substrate. At least one patterned hard mask layer is formed on and in contact with at least a first portion of the strained silicon germanium layer. At least a first exposed portion and a second exposed portion of the strained silicon germanium layer are oxidized. The oxidizing process forms a first oxide region and a second oxide region within the first and second exposed portions, respectively, of the strained silicon germanium.
International Business Machines Corporation
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Zuoguang Juntao Xin Kangguo
Liu Li Miao Cheng