Myers Bigel & Sibley, P.A.
Semiconductor devices including capacitors and methods of manufacturing the same
A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second dielectric layer and a second upper electrode sequentially stacked on the substrate, and is adjacent to the first capacitor structure. The insulation pattern partially fills a space between the first and second capacitor structures, and an air gap is formed between the first and second capacitor structures on the insulation pattern.
Samsung Electronics Co., Ltd.
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Young-Seung Sung-Eui Jun-Soo Hoon Ji-Young Seung-Jun Chan-Won Jong-Bom
Cho Kim Lee Jeong Kim Lee Kim Seo