Wood, Herron & Evans, LLP
Design structures for high-voltage integrated circuits
Design structures for high-voltage integrated circuits. The design structure, which is formed using a semiconductor-on-insulator (SOI) substrate, may include device structure with a semiconductor body positioned between first and second gate electrodes. The first and second gate electrodes and the semiconductor body may be formed from the monocrystalline SOI layer of the SOI substrate. A dielectric layer separates each of the first and second gate electrodes from the semiconductor body. These dielectric layers are formed by defining trenches in the SOI layer and filling the trenches with a dielectric material, which may occur concurrently with a process forming other device isolation regions.
International Business Machines Corporation
H
H01L
inventional
Robert J. Christopher S. Tom C. Michel J. Souvick Junjun
Gauthier, Jr. Putnam Lee Abou-Khalil Mitra Li