Lee & Morse, P.C.
Semiconductor device
A semiconductor device includes gate electrodes vertically stacked on a substrate, and channel holes passing through the gate electrodes to extend perpendicularly to the substrate and including a gate dielectric layer and a channel area. The gate dielectric layer may be formed of a plurality of layers, and at least one layer among the plurality of layers may have different thicknesses in different locations.
SAMSUNG ELECTRONICS CO., LTD.
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Hyung Joon Jung Ho Young Seon Jae Young BiO Ju Mi HanMei Su Jin
Kim Kim Son Ahn Kim Yun Choi Shin