JCIPRNET
Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistor
A gate structure includes a gate dielectric layer, a work function layer, a metal layer, and a barrier layer. The work function layer is on the gate dielectric layer. The metal layer is over the work function layer. The barrier layer is sandwiched between the metal layer and the work function layer. The barrier layer includes silicon or aluminum.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Kuan-Ting Ching-Hwanq Shih-Hang Ji-Cheng
Liu Su Chiu Chen