Harness, Dickey & Pierce, PLC
Method of manufacturing nanostructure semiconductor light-emitting device
According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.
SAMSUNG ELECTRONICS CO., LTD.
H H H H H
H01L H01L H01L H01L H01L
additional inventional additional additional additional
Hyun Seong Jin Sub Young Jin Jung Sub Jae Hyeok Ji Hye Dae Myung Han Kyu
Kum Lee Choi Kim Heo Yeon Chun Seong