Slater Matsil, LLP
FinFET device and method of forming the same
A method may include depositing a first conductive material in an opening disposed between a first semiconductor structure and a second semiconductor structure, the first conductive material comprising at least one first void. The method further includes removing a portion of the first conductive material to form a trench, the trench exposing the at least one first void and being defined by a remaining portion of the first conductive material; and depositing a second conductive material in the trench, the second conductive material and the remaining portion of the first conductive material forming a dummy gate layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Ping Hung Lun-Kuang Hui-Ying Chia-Ao
Li Tan Lu Chang