Magnetoresistive random access memory
A semiconductor device includes a substrate having an array region defined thereon, a ring of magnetic tunneling junction (MTJ) region surrounding the array region, a gap between the array region and the ring of MTJ region, and metal interconnect patterns overlapping part of the ring of MTJ region. Preferably, the ring of MTJ region further includes a first MTJ region and a second MTJ region extending along a first direction and a third MTJ region and a fourth MTJ region extending along a second direction.
UNITED MICROELECTRONICS CORP.
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G11C H01L H01L H01L H01L
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Yu-Ping Chung-Liang Yu-Ruei Jian-Cheng
Wang Chu Chen Chen