Method for making semiconductor element structure
A method for forming a semiconductor element structure is provided. First, a substrate including a first MOS and a second MOS is provided. The gate electrode of the first MOS is connected to the gate electrode of the second MOS, wherein the first MOS includes a first high-K material and a first metal for use in a first gate, and a second MOS includes a second high-K material and a second metal for use in a second gate. Then the first gate and the second gate are partially removed to form a connecting recess. Afterwards, the connecting recess is filled with a conductive material to form a bridge channel for electrically connecting the first metal and the second metal.
United Microelectronics Corp.
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Li-Wei Chien-Ming Cheng-Hsien Che-Hua Guang-Hwa Tian-Fu Chien-Ting Yi-Wen Chih-Hao
Cheng Lai Chou Hsu Ma Chiang Lin Chen Yu