Sughrue Mion, PLLC
Thin film transistor substrate and display device
Disclosed is a thin film transistor substrate that may include a base substrate, a first protection film disposed on the base substrate, an oxide semiconductor layer disposed on the first protection film, a gate electrode insulated from the oxide semiconductor layer and partially overlapped with at least one portion of the oxide semiconductor layer, a source electrode connected with the oxide semiconductor layer, and a drain electrode provided at a predetermined interval from the source electrode and connected with the oxide semiconductor layer, wherein the oxide semiconductor layer has a hydrogen content of 2.4 at % (atomic % or atom %)˜2.6 at %.
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
H H H G H H
H01L H01L H01L G02F H01L H01L
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JongUk SeungMin Kyung Chul Ki Lim Jin Seong JuHeyuck
Bae Lee Ock Han Park Baeck