Ryan, Mason & Lewis, LLP
Semiconductor fin patterning techniques to achieve uniform fin profiles for fin field effect transistors
Methods are provided for fabricating semiconductor fins having uniform profiles. For example, a method includes forming semiconductor fins on a substrate, including a first semiconductor fin disposed in a first device region, and a second semiconductor fin disposed in a second device region. The first and second semiconductor fins are formed of different types of semiconductor material, and are initially formed to have different widths and heights. A semiconductor fin trimming process is performed, which is selective to the semiconductor material of the second semiconductor fin, so that the fin trimming process results in the formation of semiconductor fins having substantially equal heights and equal widths across the device regions as a result of the fin trimming process. The semiconductor fins in different device regions are initially formed with non-uniform profiles (e.g., differential heights and widths) to compensate for micro-loading and etch rate variations during the fin trimming process.
International Business Machines Corporation
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Peng Kangguo Juntao Zhenxing
Xu Cheng Li Bi