Hauptman Ham, LLP
Method of making a semiconductor component having through-silicon vias
A method of making a semiconductor component includes etching a substrate to define an opening. The method further includes depositing a first dielectric liner in the opening, wherein the first dielectric liner has a first stress. The method further includes depositing a second dielectric liner over the first dielectric liner, wherein the second dielectric liner has a second stress, and a direction of the first stress is opposite a direction of the second stress. The method further includes depositing a conductive material over the second dielectric liner.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
H H H H H H H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional additional inventional additional inventional additional additional additional additional additional additional inventional additional inventional additional additional inventional inventional additional additional additional inventional
Chun Hua Hsiang-Yi Darryl Ebin Wen-Chih Cheng-Hung Tsang-Jiuh Chen-Hua Li-Hsien Chia-Lin
Chang Wang Kuo Liao Chiou Chang Wu Yu Huang Yu