Fish & Richardson P.C.
Process for preparing a hydrogen sensor
A high-sensitivity Pd/InP hydrogen sensor was made by a) forming an n-type or p-type semiconductor film on a semiconductor substrate; b) forming a patterned first metal electrode on the semiconductor film, wherein the first metal electrode forms an Ohmic contact with the semiconductor film; and c) forming a second metal electrode on the semiconductor film, the second metal electrode being isolated from the first metal electrode, wherein the second metal electrode forms a Schottky contact with the semiconductor film, wherein a thickness of the second metal electrode and a material of which the second metal electrode is made enable a Schottky barrier height of the Schottky contact to decrease when hydrogen contacts the second metal electrode. The second metal electrode can be physical vapor deposited or electroless plated.
National Science Council
G H
G01N H01L
inventional additional
Huey-Ing Hsi-Jen Wen-Chau Chin-Yi Yen-I
Chen Pan Liu Chu Chou