McClure, Qualey & Rodack, LLP
Gate spacer with air gap for semiconductor device structure and method for forming the same
A semiconductor device structure includes a gate stack and an adjacent source/drain contact structure formed over a semiconductor substrate. The semiconductor device structure includes a first gate spacer structure extending from a sidewall of the gate stack to a sidewall of the source/drain contact structure, and a second gate spacer structure formed over the first gate spacer structure and between the gate stack and the source/drain contact structure. The second gate spacer structure includes first and second gate spacer layers adjacent to the sidewall of the gate stack and the sidewall of the source/drain contact structure, respectively, and a third gate spacer layer separating the first gate spacer layer from the second gate spacer layer, so that an air gap is sealed by the first, second, and the third gate spacer layers and the first gate spacer structure.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chia-Hao Sheng-Tsung Yu-Ming Lin-Yu Chih-Hao Cheng-Chi Chia-Lin
Chang Wang Lin Huang Wang Chuang Chuang