Steinfl & Bruno, LLP
Nanopillar field-effect and junction transistors
Methods for fabrication of nanopillar field effect transistors are described. These transistors can have high height-to-width aspect ratios and be CMOS compatible. Silicon nitride may be used as a masking material. These transistors have a variety of applications, for example they can be used for molecular sensing if the nanopillar has a functionalized layer contacted to the gate electrode. The functional layer can bind molecules, causing an electrical signal in the transistor.
California Institute of Technology
H H H
H01L H01L H01L
inventional inventional additional
Axel Chieh-Feng Aditya
Scherer Chang Rajagopal