Lee IP Law, P.C.
Semiconductor memory devices having bit line node contact between bit line and active region
A semiconductor memory device includes a substrate having an active region, word lines extending across the active region, a bit line on the active region between the word lines, a bit line node contact between the bit line and the active region, and a storage node contact on an end portion of the active region, wherein one or more of the bit line node contact or the storage node contact include silicon germanium.
SAMSUNG ELECTRONICS CO., LTD.
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inventional inventional additional additional inventional
Namho Satoru Junsoo Min Hee Wonsok Honglae
Jeon Yamada Kim Cho Lee Park