Brinks Gilson & Lione
Catalyst-assisted chemical etching with a vapor-phase etchant
A method of catalyst-assisted chemical etching with a vapor-phase etchant has been developed. In one approach, a semiconductor substrate including a patterned titanium nitride layer thereon is heated, and an oxidant and an acid are evaporated to form a vapor-phase etchant comprising an oxidant vapor and an acid vapor. The semiconductor substrate and the patterned titanium nitride layer are exposed to the vapor-phase etchant during the heating of the semiconductor substrate. The vapor-phase etchant diffuses through the patterned titanium nitride layer, and titanium nitride-covered regions of the semiconductor substrate are etched. Thus, an etched semiconductor structure is formed.
The Board of Trustees of the University of Illinois
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Dane J. Lukas Xiuling Jeong Dong
Sievers Janavicius Li Kim