Scully, Scott, Murphy & Presser, P.C.
Method for growing beta-Ga2O3-based single crystal, and beta-Ga2O3-based single crystal substrate and method for producing same
Provided is one embodiment which is a method for growing a β-Ga2O3-based single crystal including contacting a flat plate-shaped seed crystal with a Ga2O3-based melt, and pulling up the seed crystal such that a flat plate-shaped β-Ga2O3-based single crystal having a principal surface which intersects a surface is grown without inheriting a crystal information of a vaporized material of the Ga2O3-based melt adhered to the principal surface of the seed crystal, wherein when growing the β-Ga2O3-based single crystal, a shoulder of the β-Ga2O3-based single crystal is widened in a thickness direction (t) thereof.
TAMURA CORPORATION KOHA CO., LTD.
C C C
C30B C30B C30B
inventional inventional inventional
Kimiyoshi Shinya
Koshi Watanabe