Haynes and Boone, LLP
Negative-capacitance field effect transistor
Circuit devices and methods of forming the same are provided. In one embodiment, a method includes receiving a workpiece that includes a substrate and a fin extending from the substrate, forming a first ferroelectric layer on the fin, forming a dummy gate structure over a channel region of the fin, forming a gate spacer over sidewalls of the dummy gate structure, forming an inter-level dielectric layer over the workpiece, removing the dummy gate structure to expose the first ferroelectric layer over the channel region of the fin, and forming a gate electrode over the exposed first ferroelectric layer over the channel region of the fin.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chih-Yu Bo-Feng Chi On Sai-Hooi Chih-Hao
Chang Young Chui Yeong Wang