Beyer Weaver & Thomas, LLP
Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics
A method for etching features in an integrated circuit wafer, the wafer incorporating at least one dielectric layer is provided. Generally, the wafer is disposed within a reaction chamber. An etchant gas comprising a hydrocarbon additive and an active etchant is flowed into the reaction chamber. A plasma is formed from the etchant gas within the reaction chamber. The feature is etched in at least a portion of the dielectric layer.
Lam Research Corporation
H H
H01L H01L
inventional inventional
Chok W.
Ho