Fish & Richardson P.C.
Semiconductor device and fabrication method therefor
In a crystalline silicon film fabricated by a related art method, the orientation planes of its crystal randomly exist and the orientation rate relative to a particular crystal orientation is low. A semiconductor material which contains silicon as its main component and 0.1-10 atomic % of germanium is used as a first layer, and an amorphous silicon film is used as a second layer. Laser light is irradiated to crystallize the amorphous semiconductor films, whereby a good semiconductor film is obtained. In addition, TFTs are fabricated by using such a semiconductor film.
Semiconductor Energy Laboratory Co., Ltd.
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Toru Chiho Shunpei Kenji Taketomi Tamae Takeshi
Mitsuki Kokubo Yamazaki Kasahara Asami Takano Shichi