Haynes and Boone, LLP
Method of forming a FinFET device
A method for fabricating a device is disclosed. An exemplary method includes providing a substrate and forming a plurality of fins over the substrate. The method further includes forming a first opening in the substrate in a first longitudinal direction. The method further includes forming a second opening in the substrate in a second longitudinal direction. The first and second longitudinal directions are different. The method further includes depositing a filling material in the first and second openings.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H
H01L H01L
inventional inventional
Ryan Chia-Jen Chiang Chih-Hsiung Kuei-Shun Chi-Kang Chao-Cheng Hua Feng Sheng-Yu Chia-Chu
Chen Mu-Chi Peng Chen Chang Chen Chen Chang Liu