Winkle, PLLC
Germanium-based quantum well devices
A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel. A group III-V barrier layer adds strain to the channel. Graded silicon germanium layers above and below the channel region improve performance. Multiple gate dielectric materials allow use of a high-k value gate dielectric.
Intel Corporation
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Robert S. Been-Yin Benjamin Niloy Ravi Jack T. Marko Matthew V. Willy Roza Gilbert
Chau Jin Chu-Kung Mukherjee Pillarisetty Kavalieros Radosavljevic Metz Rachmady Kotlyar Dewey