Robinson Intellectual Property Law Office, P.C.
Device including nonvolatile memory element
A device including a novel nonvolatile memory element is provided. A device including a nonvolatile memory element in which an oxide semiconductor is used as a semiconductor material for a channel formation region. The nonvolatile memory element includes a control gate, a charge accumulation layer which overlaps with the control gate with a first insulating film provided therebetween, and an oxide semiconductor layer formed using an oxide semiconductor material, which overlaps with the charge accumulation layer with a second insulating film provided therebetween.
Semiconductor Energy Laboratory Co., Ltd.
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Yoshinori Kiyoshi Jun
Ieda Kato Koyama