Morgan, Lewis & Bockius LLP
Copper-alloy barrier layers for metallization in thin-film transistors and flat panel displays
In various embodiments, electronic devices such as thin-film transistors incorporate electrodes featuring a conductor layer and, disposed below the conductor layer, a barrier layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.
H.C. Starck Inc.
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Shuwei Marc Patrick Qi Francois-Charles
Sun Abouaf Hogan Zhang Dary