Syncoda LLC
Thin-film transistor, manufacturing method thereof, and array substrate
A method for manufacturing a thin-film transistor is disclosed, which includes forming an active layer over a substrate, and performing oxidation treatment to a channel region of the active layer for controlling a carrier concentration in the channel region of the active layer. The active layer having a high carrier concentration is directly formed, and the oxidation treatment can be configured to reduce a carrier concentration of the channel region of the active layer to a level where a gating property of the thin-film transistor is still maintained. In the thin-film transistor manufactured thereby, there is a relatively small contact resistance between a source electrode and a source electrode region of the active layer and between the drain electrode and the drain electrode region of the active layer.
BOE TECHNOLOGY GROUP CO., LTD.
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Guoying Jiangbo Zhen
Wang Chen Song