Haynes and Boone, LLP
Dual metal for a backside package of backside illuminated image sensor
A method for fabricating a semiconductor device with improved bonding ability is disclosed. The method comprises providing a substrate having a front surface and a back surface; forming one or more sensor elements on the front surface of the substrate; forming one or more metallization layers over the front surface of the substrate, wherein forming a first metallization layer comprises forming a first conductive layer over the front surface of the substrate; removing the first conductive layer from a first region of the substrate; forming a second conductive layer over the front surface of the substrate; and removing portions of the second conductive layer from the first region and a second region of the substrate, wherein the first metallization layer in the first region comprises the second conductive layer and the first metallization layer in the second region comprises the first conductive layer and the second conductive layer.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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additional additional additional inventional additional additional additional additional additional inventional additional additional inventional additional additional additional additional additional additional inventional additional inventional
Pao-Tung Jhy-Ming Chun-Chieh Jen-Cheng Dun-Nian Wen-De
Chen Hung Chuang Liu Yaung Wang