Trop, Pruner & Hu, P.C.
Nanoscale structure with epitaxial film having a recessed bottom portion
An embodiment of the invention includes an epitaxial layer that directly contacts, for example, a nanowire, fin, or pillar in a manner that allows the layer to relax with two or three degrees of freedom. The epitaxial layer may be included in a channel region of a transistor. The nanowire, fin, or pillar may be removed to provide greater access to the epitaxial layer. Doing so may allow for a “all-around gate” structure where the gate surrounds the top, bottom, and sidewalls of the epitaxial layer. Other embodiments are described herein.
Intel Corporation
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Gilbert Jack Nancy Matthew Van Niloy Robert Sansaptak Marko Ravi Benjamin Willy Han Wui Niti
Dewey Kavalieros Zelick Metz Le Mukherjee Chau Dasgupta Radosavljevic Pillarisetty Chu-Kung Rachmady Then Goel