Maschoff Brennan
Semiconductor device having a metal gate and formation method thereof
A method of forming a semiconductor device includes forming a gate structure over first and second fins over a substrate; forming an interlayer dielectric layer surrounding first and second fins; etching a first trench in the interlayer dielectric layer between the first and second fins uncovered by the gate structure; forming a helmet layer in the first trench; and filling the first trench with a dielectric feature.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional additional inventional inventional additional inventional inventional inventional inventional additional inventional inventional additional inventional additional inventional additional
Chang-Yun Ya-Hsiu Bone-Fong Ming-Chang
Chang Lin Wu Wen