Amin, Turocy & Watson, LLP
Producing strained nanosheet field effect transistors using a phase change material
Strained nanosheet field effect transistors (FETs) using a phase change material are described herein. In some embodiments, a semiconductor device can comprise alternating layers of a channel material and a phase change material to produce strained nanosheet field effect transistors, wherein the layers of the phase change material cause a strain in the layers of the channel material. The phase change material comprises germanium antimony telluride. The germanium antimony telluride crystallizes into a crystalline germanium antimony telluride based on annealing above 300 degrees Celsius and a volume of the crystalline germanium antimony telluride is reduced up to six percent relative to an initial volume the germanium antimony telluride to cause the strain in the layers of the channel material. The semiconductor device can also comprise source and drain epitaxial growths on both ends of the layers of the channel material that lock the strain in the layers of the channel material.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Dexin Zhenxing Juntao Kangguo
Kong Bi Li Cheng