Volentine, Whitt & Francos, PLLC
Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same
A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.
Samsung Electronics Co., Ltd.
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Ilgyou Unki Yuyeong Seunghun Jinbum Yihwan Sungkeun Pankwi
Shin Kim Jo Lee Kim Kim Lim Park