J.C. Patents
Semiconductor structure and method of forming the same
Provided is a semiconductor structure including a substrate, an isolation structure, a fuse and two gate electrodes. The isolation structure is located in the substrate and defines active regions of the substrate. The fuse is disposed on the isolation structure. The gate electrodes are disposed on the active regions and connected to ends of the fuse. In an embodiment, a portion of a bottom surface of the fuse is lower than top surfaces of the active regions of the substrate.
United Microelectronics Corp.
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Chih-Hung Ping-Chia Zi-Jun Cheng-Hua Hung-Wei Chih-Hao An-Hsiu Chi-Cheng Kuo-Lung
Wang Shih Liu Chou Lin Pan Cheng Huang Li