Haynes and Boone, LLP
Extreme ultraviolet photoresist and method
The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a resist layer over a substrate and performing an exposing process to the resist layer. The resist layer includes a polymer backbone, an acid labile group (ALG) bonded to the polymer backbone, a sensitizer bonded to the polymer backbone, a photo-acid generator (PAG), and a thermo-base generator (TBG). The method further includes baking the resist layer at a first temperature and subsequently at a second temperature. The second temperature is higher than the first temperature. The method further includes developing the resist layer in a developer, thereby forming a patterned resist layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Ching-Yu Chin-Hsiang Ya-Ching Chen-Yu Cheng-Han
Chang Lin Chang Liu Wu