JCIPRNET
Memory device and manufacturing method thereof
Provided is a memory device including a substrate, a plurality of stack structures, a spacer, a dielectric layer, and a plurality of contact plugs. The stack structures are disposed on the substrate. The spacer is embedded in the stack structures, so that a width of an upper portion of the stack structures is less than a width of a lower portion thereof. The dielectric layer conformally covers the stack structures and the spacer. The contact plugs are respectively disposed on the substrate between the stack structures.
Winbond Electronics Corp.
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Yao-Ting Jian-Ting Hsiu-Han
Tsai Chen Liao