Scully, Scott, Murphy & Presser, P.C.
Self-aligned process for nanotube/nanowire FETs
A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the device is described. The present invention also provides a method of fabricating such a CMOS device.
International Business Machines Corporation
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Hon-Sum Philip Jia Christopher G. M. M. Christian Phaedon Roy A.
Wong Chen Detavernier Lavoie Avouris Carruthers