Harness, Dickey & Pierce, P.L.C.
Semiconductor memory devices having strapping contacts
Semiconductor memory devices having strapping contacts are provided, the devices include cell regions and strapping regions between adjacent cell regions in a first direction. Active patterns, extending in the first direction throughout the cell regions and strapping regions, are spaced apart from one another in a second direction intersecting the first direction. First interconnection lines, extending in the first direction throughout the cell regions and strapping regions, are spaced apart from one another in the second direction while overlapping with the active patterns. Second interconnection lines, extending in the second direction, intersect the active patterns and first interconnection lines in the cell regions. The second interconnection lines are spaced apart from one another in the first direction. Memory cells are positioned at intersection portions of the first and second interconnection lines in the cell regions. The active patterns contact the first interconnection lines through strapping contacts in the strapping regions.
Samsung Electronics Co., Ltd.
G H G H H G G
G11C H01L G11C H01L H01L G11C G11C
inventional inventional additional additional inventional inventional inventional
Jae-hee Jun-hyok Sung-ho Yong-tae Jung-in
Oh Kong Eun Oh Kim