Slater Matsil, LLP
Methods of forming FinFETs
An embodiment is a method including forming a first fin on a substrate, the first fin having a first longitudinal axis, forming a first trench having a first width in the first fin, the first trench dividing the first fin into at least two fin portions, forming a first gate structure and first source/drain regions over one of the at least two fin portions of the first fin, and forming a second gate structure and second source/drain regions over another of the at least two fin portions of the first fin.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Wen-Huei Cheng-Han Kuo-Chiang Yu-Wei Jyh-Huei
Guo Wu TIng Lee Chen