Muir Patent Law, PLLC
Semipolar nitride semiconductor structure and method of manufacturing the same
Provided are a semipolar nitride semiconductor structure and a method of manufacturing the same. The semipolar nitride semiconductor structure includes a silicon substrate having an Si(11k) surface satisfying 7≦k≦13; and a nitride semiconductor layer formed on the silicon substrate. The nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0.
SAMSUNG ELECTRONICS CO., LTD.
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Joo-Sung Jae-Kyun Young-Soo Young-Jo Jun-Youn
Kim Kim Park Tak Kim