Semiconductor device and method for making the same
 There is disclosed in the present invention a method for manufacturing a semiconductor device including an isolation region defined by trenches having different or equal widths respectively on a single semiconductor substrate comprising the steps of: PA1 forming insulating films on the semiconductor substrate and then forming an aperture on a passive region (isolation region); PA1 forming spacers of etch rate different from that of the insulating films on sidewalls of the aperture to define ring-shaped trench regions surrounding outline of active regions; PA1 forming another insulating film of etch rate different from that of the spacers on the substrate where the spacers are defined and removing the spacers by etching to expose the substrate within the etched spacers; and PA1 forming trenches on the exposed area of the substrate, forming an insulating film of equal character to that of the insulating films used at the time of the formation of the aperture to refill the trenches and forming the spacers on the sidewalls of the insulating film in the passive region, thereby forming ring-shaped trenches surrounding the outlines of the active regions to be an isolation region. 
Samsung Electronics Co., Ltd.
Y H H
Y10S H01L H01L
additional inventional inventional
Byeongyeol Yungi Soohan
Kim Kim Choi