McClure, Qualey & Rodack, LLP
Semiconductor device and method of fabricating the same
A semiconductor device includes an active region in a semiconductor substrate. A gate electrode is disposed over and crossing the active region. The active region includes a channel region, a source region and a drain region. A bottom conductive feature is disposed on the active region. A helmet layer is disposed on the gate electrode. A contact etch stop layer is disposed on a portion of the helmet layer. A first contact plug is disposed on the bottom conductive feature and the remaining portion of the helmet layer. A hard mask is disposed on the gate electrode. An etching selectivity between the helmet layer and the hard mask is larger than approximately 10.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Jia-Chuan Chia-Hao Wai-Yi Yu-Ming
You Chang Lien Lin