Foley & Lardner
MOSFET with solid phase diffusion source
 A MOS type semiconductor device has a gate whose length is 170 nm (0.17 .mu.m) or less, a junction depth of source and drain diffusion layers in the vicinity of a channel is 22 nm or less, and a concentration of impurities at the surface in the source and drain diffusion layers is made to 10.sup.20 cm.sup.-3 or more. Such structure is obtained using solid phase diffusion using heat range from 950.degree. C. to 1050.degree. C. and/or narrowing gate width by ashing or etching. The other MOS type semiconductor device is characterized in that the relationship between the junction depth x.sub.j nm! in the source and drain diffusion layer regions and the effective channel length L.sub.eff nm! is determined by L.sub.eff >0.69 x.sub.j -6.17. 
Kabushiki Kaisha Toshiba
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Hideaki Yasushi Tatsuya Masanobu Hisayo Yukihiro Claudio Mizuki Yasuhiro Satoshi Takashi Hiroshi
Nii Akasaka Ooguro Saito Momose Ushiku Fiegna Ono Katsumata Matsuda Yoshitomi Iwai