McDermott, Will & Emery
Semiconductor integrated logic circuit device
 An inverter-type basic cell, with a hexagonal contour, comprises one CMOS device pair arrangement including an n-channel transistor and a p-channel transistor. The inverter-type basic cell has a gate region annularly formed and connected in parallel with the n-channel and p-channel transistors, a sectoral drain diffusion region having a vertex at the center of the annularly-formed gate region, and a source diffusion region that is formed outside of the gate region in such a way as to define a shape having two opposing sides that lie on the prolongation of the two radii of the sectoral drain diffusion region. 
Matsushita Electric Industrial Co., Ltd.
H H
H01L H01L
inventional inventional
Hidenori Hiroshi Youichirou Kazuo
Shibata Mizuno Mae Tsuzuki