Sughrue Mion, PLLC
Semiconductor device having a through silicon via and methods of manufacturing the same
A semiconductor device is provided. The semiconductor device includes a first insulating interlayer disposed on a first surface of a substrate; a pad pattern disposed on a lower surface of the first insulating interlayer, the pad pattern including a first copper pattern; and a through silicon via passing through the substrate and the first insulating interlayer, and contacting the first copper pattern of the pad pattern. The through silicon via includes a first portion passing through the substrate and the first insulating interlayer, and a second portion under the first portion and extending to a portion of the first copper pattern in the pad pattern. A boundary of the through silicon via has a bent portion between the first portion and the second portion.
SAMSUNG ELECTRONICS CO., LTD.
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Ju-Bin Tae-Seong Dong-Chan Su-Jeong Ju-Il Kwang-Jin
Seo Kim Lim Park Choi Moon