Finnegan, Henderson, Farabow, Garrett & Dunner LLP
High-bandwidth magnetoresistive random access memory devices and methods of operation thereof
A method for accessing a memory cell of a magnetoresistive random access memory (MRAM) device, where the memory cell includes a plurality of memory units, includes writing the memory cell by identifying ones of the memory units having stored therein a datum different from a datum to be written thereto; and simultaneously writing all of the ones of the memory units. An MRAM device includes a plurality of write word lines, a plurality of write bit lines, and a plurality of memory cells. Each memory cell includes a plurality of memory units. Each memory unit includes a free magnetic region having one or more easy axes non-perpendicular to the write bit lines and non-perpendicular to the write word lines, a pinned magnetic region, and a tunneling barrier between the free magnetic region and the pinned magnetic region.
Industrial Technology Research Institute
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additional additional inventional inventional
Chien-Chung Yuan-Jen Ming-Jer
Hung Lee Kao