WPAT, P.C.
Semiconductor structure and manufacturing method thereof
A semiconductor structure includes a first substrate, a second substrate disposed over the first substrate, and including a first surface, a second surface opposite to the first surface, a via portion extending between the first surface and the second surface, a first through hole and a second through hole, and a device disposed over the second surface, and including a dielectric layer, a backplate at least partially exposed from the dielectric layer and a membrane at least partially exposed from the dielectric layer and disposed between the backplate and the first substrate, wherein the via portion is disposed within the second through hole, and the dielectric layer is bonded with the second substrate, and the device is electrically connected to the first substrate through the via portion.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Tzu-Heng Chen Hsiung Chia-Hua Cheng San Yi-Heng
Wu Yang Chu Chou Tsai