Anderson Kill & Olick, PC
Volatile organogallium compound and deposition of gallium nitride film using same
 A volatile organogallium compound of formula(I), an azidodialkylgallium complexed with a hydrazine derivative, can form a GaN film having no nitrogen defects by a metal organic chemical vapor deposition(MOCVD): EQU R.sup.1 R.sup.2 (N.sub.3)Ga.(R.sup.3 HNNR.sup.4 H) (I) wherein, R.sup.1 and R.sup.2 are each independently C.sub.1-5 alkyl; and R.sup.3 and R.sup.4 are each independently hydrogen or C.sub.1-5 alkyl. 
Korea Research Institute of Chemical Technology
H H C C H C H
H01L H01L C30B C07F H01L C30B H01L
inventional inventional inventional inventional inventional inventional inventional
Yun-soo Seung-Ho Chang-Gyoun
Kim Yu Kim