Oliff & Berridge
Process for depositing titanium nitride film by CVD
 A process which is capable of depositing a titanium nitride film of a high quality at a high deposition rate by low temperature chemical vapor deposition is provided. The titanium nitride film is deposited using a gas source comprising a compound of the general formula: EQU A.sub.n B.sub.m Ti wherein n and m are independently selected from integers of from 1 to 3 provided that sum of n and m is equal to or smaller than 4; A is selected from a cyclic hydrocarbon group and a nitrogen-containing heterocyclic group which is bonded to the titanium by .pi. electron; and B is an alkylamine derivative group containing a nitrogen atom which is directly bonded to the titanium. The film deposition process of the invention is highly useful in LSI fabrication. 
Kawasaki Steel Corporation
C
C23C
inventional
Tadashi Tomohiro
Nakano Ohta