Haynes and Boone, LLP
Method and structure for gap filling improvement
The present disclosure provides a method for forming a semiconductor structure. The method includes providing a substrate including a plurality of fin structures on the substrate; coating a first solution on the substrate to form a first dielectric layer; and coating a second solution on the first dielectric layer to form a second dielectric layer to cover the fin structures. The first solution has a first viscosity. The second solution has a second viscosity. In some embodiments, the second viscosity is greater than the first viscosity.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Chia-Chu Yu-Chung Chi-Kang Yu-Lun Ying-Hao Kuei-Shun
Liu Su Chang Liu Su Chen