Hauptman Ham, LLP
System and methods for converting planar design to FinFET design
A FinFET structure layout includes a semiconductor substrate comprising a plurality of FinFET active areas, and a plurality of fins within each FinFET active area of the plurality of FinFET active areas. The FinFET structure layout further includes a gate having a gate length parallel to the semiconductor substrate and perpendicular to length of the plurality of fins within each FinFET active area of the plurality of FinFET active areas. The FinFET structure layout further includes a plurality of metal features connecting a source region or a drain region of a portion of the plurality of FinFET active areas to a plurality of contacts. The plurality of metal features includes a plurality of metal lines parallel to a FinFET channel direction and a plurality of metal lines parallel to a FinFET channel width direction.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Ming-Feng Ting-Chu Yi-Tang Clement Hsingjen Chung-Hsien Chih-Sheng
Shieh Ko Lin Wann Chen Chang