Myers Bigel Sibley & Sajovec, P.A.
Methods of forming capacitors including reducing exposed electrodes in semiconductor devices
A method of fabricating an integrated circuit device having capacitors is provided. The capacitors can include a first electrode, a dielectric layer and a second electrode. An interlayer insulating layer is formed on the capacitor. The interlayer insulating layer is patterned to form a metal contact hole that exposes a region of the second electrode. The exposed region of the second electrode is reduced to remove excessive oxygen atoms that can exist in the second electrode.
Samsung Electronics Co., Ltd.
H H
H01L H01L
inventional inventional
Yun-Jung Jung-Hee Young-Sun Han-Mei
Lee Chung Kim Choi