Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Solid-state image sensor
 A MOS-type solid-state image sensor has a plurality of pixel units arranged on a p-type Si substrate in a matrix format. Each pixel unit has a photoelectric conversion portion including a photodiode, and a signal extraction portion including an amplification MOS transistor. Each element isolation region for isolating the pixel units from each other has a field oxide film formed on the substrate and a p-type diffusion layer formed in the substrate layer immediately below the oxide film to have a higher carrier impurity concentration than the substrate layer. The bottom portion of each element isolation region is positioned deeper than the bottom portion of a depletion layer extending from the p-n junction of the photodiode to the substrate in an equilibrium state. 
Kabushiki Kaisha Toshiba
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Tetsuya Ikuko Hisanori Hidetoshi Nobuo Hirofumi
Yamaguchi Inoue Ihara Nozaki Nakamura Yamashita