Anova Law Group, PLLC
Semiconductor device and fabrication method thereof
The present disclosure provides a method for fabricating a fin field-effect transistor (fin-FET), including: providing a substrate having a plurality of discrete fin structures thereon; forming a chemical oxide layer on at least a sidewall of a fin structure; forming a doped layer containing doping ions on the chemical oxide layer; and annealing the doped layer such that the doping ions diffuse into the fin structure to form a doped region.
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
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Yong
Li