Method for reducing particles during ion implantation
A method for reducing particles during ion implantation is provided. The method involves the use of an improved Faraday flag including a beam plate having thereon a beam striking zone comprising a recessed trench pattern on which the ion beam scans to and fro. An ion beam selected from the mass analyzer is blocked by the Faraday flag in a closed position between the mass analyzer and the semiconductor wafer. A beam current of the ion beam impinging on the beam striking zone of the beam plate is measured. After the beam current measurement, the Faraday flag is removed such that the ion beam impinges on the semiconductor wafer.
United Microelectronics Corp.
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Cheng-Hung Jui-Fang Chung-Shih Chung-Jung
Chang Chen Shen Chen