Schwabe, Williamson & Wyatt P.C.
Forming LED structures on silicon fins
Methods of forming III-V LED structures on silicon fin templates are described. Those methods and structures may include forming an n-doped III-V layer on a silicon (111) plane of a silicon fin, forming a quantum well layer on the n-doped III-V layer, forming a p-doped III-V layer on the quantum well layer, and then forming an ohmic contact layer on the p-doped III-V layer.
Intel Corporation
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Sansaptak Marko Benjamin Han Wui Sanaz Robert S.
Dasgupta Radosavljevic Chu-Kung Then Gardner Chau