Sawyer Law Group LLP
Backside device deprocessing of a flip-chip multi-layer integrated circuit
 Aspects for deprocessing of a flip-chip, multi-layer integrated circuit from the backside are described. In an exemplary method aspect, the method includes reducing a first backside layer of the multi-layer integrated circuit to a predetermined thickness, and exposing an active region of the multi-layer integrated circuit to allow device analysis of the multi-layer integrated circuit. The method further includes removing a metal layer beneath the active region to expose interlayer dielectric material, performing a bulk delayering of the interlayer dielectric material to expose a next metal layer, and continuing to delayer the multi-layer integrated circuit layer-by-layer from the backside for analysis of the multi-layer integrated circuit. 
Advanced Micro Devices, Inc.
G
G01N
inventional
Xia
Li