Buchanan Ingersoll & Rooney PC
Semiconductor power device
Disclosed is a semiconductor power device, including a semiconductor substrate; a MOSFET region formed on the semiconductor substrate, where the MOSFET region includes at least one MOSFET unit; and at least one collector region located in the semiconductor substrate, where the collector region and the MOSFET unit form an insulated gate bipolar transistor.
SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD
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Zhendong Wei Rui Lei Yi Yuanlin
Mao Liu Wang Liu Gong Yuan