Lowe Hauptman & Ham, LLP
Selective fin-shaping process using plasma doping and etching for 3-dimensional transistor applications
A semiconductor apparatus includes fin field-effect transistor (FinFETs) having shaped fins and regular fins. Shaped fins have top portions that may be smaller, larger, thinner, or shorter than top portions of regular fins. The bottom portions of shaped fins and regular fins are the same. FinFETs may have only one or more shaped fins, one or more regular fins, or a mixture of shaped fins and regular fins. A semiconductor manufacturing process to shape one fin includes forming a photolithographic opening of one fin, optionally doping a portion of the fin, and etching a portion of the fin.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Yi-Tang Chi-Wen Ling-Yen Chi-Yuan Clement Hsingjen Chih-Sheng
Lin Liu Yeh Shih Wann Chang