Harness, Dickey and Pierce, P.L.C.
Power device
A power device includes a drift layer of a second conductivity type located on a semiconductor layer of a first conductivity type, a first source region of the second conductivity type and a second source region of the second conductivity type, located on the drift layer to be apart from each other, and a gate electrode on the drift layer between the first and second source regions with a gate insulating layer between the gate electrode and the drift layer, wherein the gate electrode includes a first gate electrode and a second gate electrode adjacent to the first source region and the second source region, respectively, and a third gate electrode between the first and second gate electrodes, wherein the third gate electrode is floated or grounded.
Samsung Electronics Co., Ltd.
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Ui-hui Kang-hyun Jun-hyeok Da-won Jae-ho Jae-hyun Kyu-ok
Kwon Baek Kim Jeong Kim Yoo Lee