Slater Matsil, LLP
Methods of forming an abrasive slurry and methods for chemical-mechanical polishing
Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chia Hsuan Kei-Wei Yi-Sheng Kuo-Hsiu Chia-Wei Jian-Ci Chun-Wei Yang-Chun Li-Chieh Chi-Jen Liang-Guang Chi-Hsiang
Lee Chen Lin Wei Ho Lin Hsu Cheng Wu Liu Chen Shen