Morrison & Foerster LLP
Manufacturing method of semiconductor device
A glass substrate is bonded through a resin to the top surface of a semiconductor wafer on which a first wiring is formed. A V-shaped groove is formed by notching from the back surface of the wafer. A second wiring connected with the first wiring and extending over the back surface of the wafer is formed. A protection film composed of an organic resin or a photoresist layer to provide protection with an opening is formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the back surface of the wafer by spray coating.
Sanyo Electric Co., Ltd.
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Yukihiro Yoshinori Koichi Takashi Hiroshi Akira Hiroyuki
Takao Seki Kuhara Noma Yamada Suzuki Shinogi