Lowe Hauptman Ham & Berner, LLP
FinFET and method of fabricating the same
The disclosure relates to a fin field effect transistor (FinFET). An exemplary structure for a FinFET comprises a substrate comprising a top surface; a first insulation region and a second insulation region over the substrate top surface comprising tapered top surfaces; a fin of the substrate extending above the substrate top surface between the first and second insulation regions, wherein the fin comprises a recessed portion having a top surface lower than the tapered top surfaces of the first and second insulation regions, wherein the fin comprises a non-recessed portion having a top surface higher than the tapered top surfaces; and a gate stack over the non-recessed portion of the fin.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Shu-Tine Shin-Yeh Chu-Yun Hung-Ta Hung-Ming
Yang Huang Fu Lin Chen