Birch, Stewart, Kolasch & Birch, LLP
Semiconductor structure with high-voltage and low-voltage CMOS devices and method for manufacturing the same
A semiconductor structure includes a first high-voltage MOS device region having a first light doping region in a substrate. The conductive type of the substrate is similar to that of the first light doping region. A first well is in the substrate. The first well substantially contacts a side of the first light doping region and does not extend under the first light doping region. The conductive type of the first well is opposite that of the first light doping region. A first gate stack is disposed on a part of the first light doping region and a first well. A first heavy doping region is disposed in the first well and the first light doping region at two sides of the first gate stack. The conductive type of the first heavy doping region is opposite that of the first light doping region.
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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Jun-Wei Manoj Chih-Cherng Chia-Hao
Chen Kumar Liao Lee