Patent Capital Group
Wafer-scale integration of vacancy centers for spin qubits
Embodiments of the present disclosure propose two methods for integrating vacancy centers (VCs) on semiconductor substrates for forming VC-based spin qubit devices. The first method is based on using a self-assembly process for integrating VC islands on a semiconductor substrate. The second method is based on using a buffer layer of a III-N semiconductor material over a semiconductor substrate, and then integrating VC islands in an insulating carbon-based material such as diamond that is either grown as a layer on the III-N buffer layer or grown in the openings formed in the III-N buffer layer. Integration of VC islands on semiconductor substrates typically used in semiconductor manufacturing according to any of these methods may provide a substantial improvement with respect to conventional approaches to building VC-based spin qubit devices and may promote wafer-scale integration of VC-based spin qubits for use in quantum computing devices.
Intel Corporation
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Nicole K. Jeanette M. David J. Zachary R. Kanwaljit Roman Marko James S. Sansaptak Lester Ravi Hubert C.
Thomas Roberts Michalak Yoscovits Singh Caudillo Radosavljevic Clarke Dasgupta Lampert Pillarisetty George