Westerman, Hattori, Daniels & Adrian, LLP
Semiconductor device and fabrication process thereof
There is provided a semiconductor device having a device isolation region of STI structure formed on a silicon substrate so as to define a device region, wherein the device isolation region comprises a device isolation trench formed in the silicon substrate, and a device isolation insulation film filling the device isolation trench. At least a surface part of the device isolation insulation film is formed of an HF-resistant film.
Fujitsu Microelectronics Limited
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Katsuaki Toshifumi Takashi Hiroyuki
Ookoshi Mori Watanabe Ohta