Birch, Stewart, Kolasch & Birch, LLP
Semiconductor device and method for fabricating the same
The invention provides a semiconductor device, including: a substrate of a first conductivity type having an active region and a termination region; an epitaxial layer of the first conductivity type over the substrate; a plurality of first trenches and second trenches in the epitaxial layer; an implant blocker layer formed at bottoms of the first and second trenches; a liner of a second conductivity type different from the first conductivity type conformally formed along sidewalls of the first and second trenches; a dielectric material filled in the first and second trenches defining a plurality of first columns and a plurality second column, respectively; a gate dielectric layer over the epitaxial layer; two floating gates formed on the gate dielectric layer; a source region; an inter-layer dielectric layer; and a contact plug formed on the source region.
Vanguard International Semiconductor Corporation
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Gene Rudy Octavius Chia-Hao Shang-Hui Manoj Rahul Shao-Ming
Sheu Sihombing Lee Tu Kumar Kumar Yang