Volentine & Whitt, PLLC
Semiconductor device comprising string structures formed on active region
A semiconductor device having a string gate structure and a method of manufacturing the same suppress leakage current. The semiconductor device includes a selection gate and a memory gate. The channel region of the selection gate has a higher impurity concentration than that of the memory gate. Impurities may be implanted at different angles to form the channel regions having different impurity concentrations.
Samsung Electronics Co., Ltd.
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Jungal Changhyun
Choi Lee