Myers Bigel Sibley & Sajovec
Multi-bit flash memory device and program and read methods thereof
The flash memory device of the present invention is configured to program a plurality of bits per unit cell, wherein a program condition of a selected bit is set according to whether a program for the most previous bit to the selected bit for programming is skipped or not skipped. As a result, an accurate programming and reading operation is possible even in case a program for a middle bit is skipped.
Samsung Electronics Co., Ltd.
G G G G G G
G11C G11C G11C G11C G11C G11C
inventional additional inventional inventional additional inventional
Seung-Jae Dong-Hyuk Dong-Ku
Lee Chae Kang