Nonvolatile memory sensing system
 A sensing system for a nonvolatile memory transistor array employs reference transistors which are substantially identical to the memory transistors within the array and employs means to program the threshold voltage levels of the reference transistors to a lower level than that of the memory transistors within the array such that the changes in the electrical characteristics of both the memory and the reference transistors are proportional over time, the system thereby being rendered self-tracking. 
McDonnell Douglas Corporation
G
G11C
inventional
Eden Y. C. Yung J.
Mei Chen