Sughrue Mion, PLLC
Film bulk acoustic resonator and a method for manufacturing the same
A film bulk acoustic resonator (FBAR) including a substrate having an etched air gap therethrough; a resonance part having a first electrode, a piezoelectric film and a second electrode which are laminated in turn above the air gap; and an etching resistance layer disposed between the air gap and the resonance part to limit an etching depth in forming the air gap, thereby preventing damage to the resonance part.
Samsung Electronics Co., Ltd.
Y H H
Y10T H03H H03H
additional inventional inventional
Hyung In-sang Seog-woo Byeoung-ju
Choi Song Hong Ha