Knobbe, Martens, Olson & Bear LLP
Semiconductor processing methods, methods of forming silicon dioxide methods of forming trench isolation regions, and methods of forming interlevel dielectric layers
 In one aspect, the invention includes a semiconductor processing method of removing water from a material comprising silicon, oxygen and hydrogen, the method comprising maintaining the material at a temperature of at least about 100.degree. C., more preferably at least 300.degree. C., and at a pressure of greater than 1 atmosphere to drive water from the material. In another aspect, the invention includes a semiconductor processing method of forming SiO.sub.2 having a wet etch removal rate of less than about 700 Angstroms/minute comprising: a) forming a layer comprising Si(OH).sub.x ; b) maintaining the Si(OH).sub.x at a temperature of at least about 300.degree. C. and at a pressure of greater than 1 atmosphere to drive water from the Si(OH).sub.x ; and c) converting the Si(OH).sub.x to SiO.sub.2, the SiO.sub.2 having a wet etch removal rate of less than about 700 Angstroms/minute under the conditions of a buffered oxide etch utilizing 20:1 H.sub.2 O:HF, at about atmospheric pressure and at a temperature of about 30.degree. C. In another aspect, the invention includes a method of forming a trench isolation region comprising: a) forming a trench within a substrate; b) forming a layer comprising Si(OH).sub.x within the trench and over the substrate; c) driving water from the layer comprising Si(OH).sub.x at a pressure of greater than 1 atmosphere; d) converting the Si(OH).sub.x to SiO.sub.2 ; and e) removing at least a portion of the SiO.sub.2. 
Micron Technology, Inc.
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David L. Trung Tri Weimin
Chapek Doan Li