Blakely, Sokoloff, Taylor & Zafman LLP
Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation
Embodiments include high electron mobility transistors (HEMT). In embodiments, a gate electrode is spaced apart by different distances from a source and drain semiconductor region to provide high breakdown voltage and low on-state resistance. In embodiments, self-alignment techniques are applied to form a dielectric liner in trenches and over an intervening mandrel to independently define a gate length, gate-source length, and gate-drain length with a single masking operation. In embodiments, III-N HEMTs include fluorine doped semiconductor barrier layers for threshold voltage tuning and/or enhancement mode operation.
Intel Corporation
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Robert S. Ravi Seung Hoon Han Wui Niti Marko Niloy Sansaptak Sanaz Kabehie
Chau Pillarisetty Sung Then Goel Radosavljevic Mukherjee Dasgupta Gardner