Cantor Colburn LLP
Formation of inner spacer on nanosheet MOSFET
A method of forming a field effect transistor (FET) includes performing an oxidation on a nanosheet structure having alternating sheets of silicon and silicon germanium. An oxide etch is performed to remove portions of the sheets of silicon germanium. Other embodiments are also described herein.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Peng Zhenxing Juntao Kangguo
Xu Bi Li Cheng