Magnetic tunnel junction device with diffusion barrier layer
A magnetic tunnel junction (MTJ) device and fabrication method is disclosed. A particular embodiment includes a magnetic tunnel junction structure above a bottom electrode. The particular embodiment further includes a portion of a diffusion barrier layer adjacent to the magnetic tunnel junction structure. A top of the magnetic tunnel junction structure is connected to a conductive layer.
QUALCOMM Incorporated
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Xiaochun Xia Seung H.
Zhu Li Kang