Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
Manufacturing method of semiconductor device to uniformly form thickness of gate insulating layer
A manufacturing method of a semiconductor device is provided. The method includes sequentially forming an n− type of layer, a p type of region, and an n+ type of region on a first surface of a substrate, forming a preliminary trench in the n− type of layer by a first etching process and forming a preliminary gate insulating layer by a first thermal oxidation process. The method includes etching the lower surface of the preliminary trench and the preliminary second portion to form a trench by a second etching process and forming a gate insulating layer in the trench by a second thermal oxidation process. The gate insulating layer includes a first and second portion. The preliminary first portion is thicker than the preliminary second portion and the first portion. The first portion thickness is equal to the thickness of the second portion.
Hyundai Motor Company Kia Motors Corporation
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Junghee Youngkyun Hyun Woo Dae Hwan JongSeok NackYong
Park Jung Noh Chun Lee Joo