Patterson & Sheridan, LLP
Method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate
A method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate using a gas mixture that includes a passivation gas. The passivation gas is provided to a peripheral region of the substrate to passivate sidewalls of the structures being etched.
Applied Materials, Inc.
H
H01L
inventional
David Wei
Mui Liu