System and method to fabricate magnetic random access memory
A system and method to fabricate magnetic random access memory is disclosed. In a particular embodiment, the method includes depositing a cap layer on a magnetic tunnel junction (MTJ) structure, depositing a first spin-on material layer over the cap layer, and etching the first spin-on material layer and at least a portion of the cap layer.
QUALCOMM Incorporated
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Xia Xiaochun Seung H.
Li Zhu Kang