Slater Matsil, LLP
Method of manufacturing semiconductor devices with multiple silicide regions
A semiconductor device with multiple silicide regions is provided. In embodiments a first silicide precursor and a second silicide precursor are deposited on a source/drain region. A first silicide with a first phase is formed, and the second silicide precursor is insoluble within the first phase of the first silicide. The first phase of the first silicide is modified to a second phase of the first silicide, and the second silicide precursor being soluble within the second phase of the first silicide. A second silicide is formed with the second silicide precursor and the second phase of the first silicide.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Sheng-Hsuan Hung-Hsu Yan-Ming Wei-Yip Chih-Wei
Lin Chen Tsai Loh Chang