Muir Patent Law, PLLC
Semiconductor device and method for fabricating the same
There is provided a semiconductor device capable of enhancing short channel effect by forming a carbon-containing semiconductor pattern in a source/drain region. The semiconductor device includes a first gate electrode and a second gate electrode spaced apart from each other on a fin-type pattern, a recess formed in the fin-type pattern between the first gate electrode and the second gate electrode, and a semiconductor pattern including a lower semiconductor film formed along a profile of the recess and an upper semiconductor film on the lower semiconductor film, wherein the lower semiconductor film includes a lower epitaxial layer and an upper epitaxial layer sequentially formed on the fin-type pattern, and a carbon concentration of the upper epitaxial layer is greater than a carbon concentration of the lower epitaxial layer.
SAMSUNG ELECTRONICS CO., LTD.
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Il Gyou Seok Hoon Sun Jung Seung Hun Dong Suk Kyung Hee Cho Eun Jin Bum Hyun Jung
Shin Kim Kim Lee Shin Kim Lee Kim Lee