InAs-GaSb Tunnel diode
 Disclosed is a tunnel diode consisting of an accumulation region of p-type GaSb and an accumulation region of n-type InAs separated by a thin layer of a quaternary compound consisting of InGaSbAs. Such a diode structure converts the interface between the two accumulation regions of p-type and n-type material from what would normally be an ohmic junction into a tunneling junction. Such a tunnel diode requires no heavy doping which is normally required for a tunnel diode. 
The United States of America as represented by the Secretary of the Army
H H
H01L H01L
inventional inventional
Leo Chin-An
Esaki Chang