Sterne, Kessler, Goldstein & Fox P.L.L.C.
Sidewall spacers for self-aligned contacts
A semiconductor device and method for fabricating such a device are presented. The semiconductor device includes a first gate electrode of a transistor, a first sidewall spacer along a sidewall of the gate pattern, a first insulating layer in contact with the first sidewall spacer and having a planarized top surface, and a second sidewall spacer formed on the planarized top surface of the first insulating layer. The second sidewall spacer may be formed over the first sidewall spacer. A width of the second sidewall spacer is equal to or greater than a width of the first sidewall spacer.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Min-Yann C. H. Hua Feng Kuo-Hua Jyun-Ming
Hsieh Wu Chen Pan Lin