MIM capacitor and method of forming the same
According to an exemplary embodiment, a method of forming a MIM capacitor is provided. The method includes the following operations: providing a first metal layer; providing a dielectric layer over the first metal layer; providing a second metal layer over the dielectric layer; etching the second metal layer to define the metal-insulator-metal capacitor; and oxidizing a sidewall of the second metal layer. According to an exemplary embodiment, a MIM capacitor is provided. The MIM capacitor includes a first metal layer; a dielectric layer over the first metal layer; a second metal layer over the dielectric layer; and an oxidized portion in proximity to the second metal layer and made of oxidized second metal layer.
Taiwan Semiconductor Manufacturing Company Limited
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inventional inventional inventional
Chun-Chieh Pin-Cheng Chia-Der Hao-Wen Chih-Wei Hsiao-Hui
Huang Hsu Chang Hsu Kao Yu