Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Semiconductor device and fabrication method thereof
For a suppressed breakage after a flip chip connection of a semiconductor device using a low-permittivity insulation film and a lead-free solder together, with an enhanced production yield, bump electrodes (2) are heated by a temperature profile having, after a heating up to a melting point of the bump electrodes (2) or more, a cooling in which a temperature within a range of 190 to 210° C. is kept for an interval of time within a range of 3 to 15 minutes, and a condition is met, such that 1.4<Lb/La<1.6, where La is a diameter of second electrode pads (33), and Lb is a diameter of first electrode pads (13).
Kabushiki Kaisha Toshiba
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Hisashi Kazuhito Masayuki Takashi
Ito Higuchi Uchida Togasaki