DLA Piper LLP
Self-aligned stack gate structure for use in a non-volatile memory array and a method of forming such structure
A stack gate structure for a non-volatile memory array has a semiconductor substrate having a plurality of substantially parallel spaced apart active regions, with each active region having an axis in a first direction. A first insulating material is between each stack gate structure in the second direction perpendicular to the first direction. Each stack gate structure has a second insulating material over the active region, a charge holding gate over the second insulating material, a third insulating material over the charge holding gate, and a first portion of a control gate over the third insulating material. A second portion of the control gate is over the first portion of the control gate and over the first insulating material adjacent thereto and extending in the second direction. A fourth insulating material is over the second portion of the control gate.
Silicon Storage Technology, Inc.
H H H H H H
H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional
Chien-Sheng Yueh-Hsin Xian Mandana Nhan Henry Stephan Willem-Jan Liz Nadia Gerhard Florence Cecile
Su Chen Liu Tadayoni Do Om'mani Wege Toren Cuevas Miridi Metzger-Brueckl Guyot Bernardi