Lewis Roca Rothgerber Christie LLP
Field effect transistor with stacked nanowire-like channels and methods of manufacturing the same
A CMOS circuit includes a partial GAA nFET and a partial GAA pFET. The nFET and the pFET each include a fin including a stack of nanowire-like channel regions and a dielectric separation region extending completely between first and second nanowire-like channel regions of the stack. The nFET and the pFET each also include a source electrode and a drain electrode on opposite sides of the fin, and a gate stack extending along a pair of sidewalls of the stack of nanowire-like channel regions. The gate stack includes a gate dielectric layer and a metal layer on the gate dielectric layer. The metal layer does not extend between the first and second nanowire-like channel regions. The channel heights of the nanowire-like channel regions of the partial GAA nFET and the partial GAA pFET are different.
Samsung Electronics Co., Ltd.
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Pan Kwi Seung Hun Mark S. Joon Goo Seung Ryul Borna J.
Park Lee Rodder Hong Lee Obradovic