Haynes and Boone, LLP
Method for photoresist pattern removal
The present disclosure provides a method for making a semiconductor device. The method includes forming a sacrificial layer on a substrate; forming a patterned resist layer on the sacrificial layer; performing an ion implantation to the substrate; applying a first wet etch solution to remove the patterned photoresist layer; and applying a second wet etch solution to remove the sacrificial layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Ching-Yu
Chang