Marshall, Gerstein & Borun LLP
Method of doping P-type impurity ions in dual poly gate and method of forming dual poly gate using the same
A method of doping p-type impurity ions in a dual poly gate, comprising: forming a polysilicon layer doped with n-type impurity ions on a substrate with a gate insulation layer being interposed between the polysilicon layer and the substrate; exposing a region of the polysilicon layer; implementing a first doping of p-type impurity ions into the exposed region of the polysilicon layer by ion implantation so with a projection range Rp to a predetermined depth of the polysilicon layer; and implementing a second doping of p-type impurity ions into the exposed region of the polysilicon layer doped with the p-type impurity ions by plasma doping with a sloped doping profile.
Hynix Semiconductor Inc.
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inventional additional inventional inventional
Seung Mi Kyoung Bong
Lee Rouh