Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Semiconductor device having a shaped gate electrode and method of manufacturing the same
An MIS transistor includes a gate electrode located to intersect a device region of a semiconductor substrate isolated by a device isolation region, and source and drain regions formed in the semiconductor substrate at both sides of the gate electrode region and elevated source and drain located above the source and drain regions. A gate length of the gate electrode at a boundary between the device isolation region and the device region is longer than the gate length at a central portion of the device region.
Kabushiki Kaisha Toshiba
H H H H
H01L H01L H01L H01L
inventional inventional inventional inventional
Hitoshi Hiroyuki
Ito Yamasaki