Haynes and Boone, LLP
Method of semiconductor fabrication with height control through active region profile
The present disclosure provides a method for fabricating an integrated circuit in accordance with some embodiments. The method includes forming a trench on a semiconductor substrate, thereby defining fin active regions; extracting a profile of the fin active regions; determining an etch dosage according to the profile of the fin active regions; filling in the trench with a dielectric material; and performing an etching process to the dielectric material using the etch dosage, thereby recessing the dielectric material and defining a fin height of the fin active regions.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Yi-Cheng Che-Cheng Jung-Jui Po-Chi
Chao Chang Li Wu