Haynes and Boone, LLP
Acoustic measurement of film thickness
Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
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G01N H01L B08B B08B H01L G01B H01L G01N G01B H01L B08B H01L G01B G01B H01L
inventional inventional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional
Yu-Ching Sheng-Chi Kuan-Wen Jun-Hao
Lee Chin Lin Deng