Heslin Rothenberg Farley & Mesiti P.C.
Replacement low-K spacer
A method includes providing a gate structure having a gate, a first spacer along at least one side of the gate and an interlayer dielectric on at least one of the gate and the first spacer. The interlayer dielectric is removed to reveal the first spacer. The first spacer is removed and a second spacer is deposited on at least one side of the gate. The second spacer is formed of material having a lower dielectric constant than the first spacer.
GLOBAL FOUNDRIES, Inc.
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Rama Andy Lakshmanan H. Guillaume Jin Ping Sridhar Xiuyu Jing Cuiqin
Kambhampati Wei Vanamurthy Bouche Liu Kuchibhatla Cai Wan Xu