Semiconductor process
A semiconductor process includes the following steps. An interdielectric layer is formed on a substrate and the interdielectric layer has a first recess and a second recess. A metal layer is formed to cover the surface of the interdielectric layer, the first recess and the second recess. Partially fills a sacrificed material into the first recess and the second recess so that a portion of the metal layer in each of the recesses is respectively covered. The uncovered metal layer in each of the recesses is removed. The sacrificed material is removed. An etching process is performed to remove the remaining metal layer in the first recess and reserve the remaining metal layer in the second recess.
United Microelectronics Corp.
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Chang-Hung Teng-Chun Ya-Hsueh Bor-Shyang Chan-Lon Wei-Hsin Chun-Yao Pong-Wey
Kung Hsuan Hsieh Liao Yang Liu Yang Huang