Wenderoth, Lind & Ponack, L.L.P.
Method for producing a nitride semiconductor element
A method of producing an efficient nitride semiconductor element having an opposed terminal structure. The method includes a growing step for growing the nitride semiconductor further having an undoped GaN layer on a different materials substrate; subsequently, an attaching step for attaching the supporting substrate to the first conductive type nitride semiconductor layer side of the nitride semiconductor and interposing a first terminal between them; and subsequently, an exposing step for exposing the second conductive type nitride semiconductor layer by eliminating the different material substrate and the undoped GaN.
Nichia Corporation
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Kazumi Masashi Mitsuhiro Masahiko
Kamada Yamamoto Nonaka Sano