Haynes and Boone, LLP
FinFET having non-merging epitaxially grown source/drains
A semiconductor device includes a layer having a semiconductive material. The layer includes an outwardly-protruding fin structure. An isolation structure is disposed over the layer but not over the fin structure. A first spacer and a second spacer are each disposed over the isolation structure and on sidewalls of the fin structure. The first spacer is disposed on a first sidewall of the fin structure. The second spacer is disposed on a second sidewall of the fin structure opposite the first sidewall. The second spacer is substantially taller than the first spacer. An epi-layer is grown on the fin structure. The epi-layer protrudes laterally. A lateral protrusion of the epi-layer is asymmetrical with respect to the first side and the second side.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chun Po Tzu-Hsiang Fu-Kai Wei-Yang Mei-Yun Chen-Ming
Chang Hsu Yang Lee Wang Lee