Seed IP Law Group LLP
Metal heterojunction structure with capping metal layer
The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.
Taiwan Semiconductor Manufacturing Co., Ltd
H H H C H H H H H H H H H H H H H
H01L H01L H01L C09G H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional inventional inventional additional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Yi-Sheng Chun-Wei Chi-Hsiang William Weilun Liang-Guang Te-Ming Chia-Wei Chi-Jen Kei-Wei Yang-Chun
Lin Hsu Shen Hong Chen Kung Ho Liu Chen Cheng