Scully, Scott, Murphy & Presser, P.C.
Defect reduction by oxidation of silicon
A high-quality, substantially relaxed SiGe-on-insulator substrate material which may be used as a template for strained Si is described. The substantially relaxed SiGe-on-insulator substrate includes a Si-containing substrate, an insulating region that is resistant to Ge diffusion present atop the Si-containing substrate, and a substantially relaxed SiGe layer present atop the insulating region. The insulating region includes an upper region that is comprised of a thermal oxide and the substantially relaxed SiGe layer has a thickness of about 2000 nm or less.
International Business Machines Corporation
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Y10S Y10T H01L
additional additional inventional
Anthony G. Stephen W. Huajie Devendra K. Keith E.
Domenicucci Bedell Chen Sadana Fogel