Harness, Dickey & Pierce, P.L.C.
Semiconductor devices and methods of fabricating the same
In a method of fabricating a semiconductor device, a first mask pattern is formed on a substrate. The first mask pattern has a first opening formed to expose the substrate. An oxidation barrier region is formed in the substrate exposed by the first opening, and the first mask pattern is patterned to form a second mask pattern having a second opening. A gate insulation layer is formed on the substrate exposed by the second opening. The gate insulation layer has a variable thickness.
Samsung Electronics Co., Ltd.
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Jin Hua Jong-Hyon
Liu Ahn