NSIP Law
Integrated semiconductor device and method for manufacturing the same
A semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed in the first region and second region, respectively, wherein the first transistor includes a thick gate insulating layer and a thin buffer insulating layer formed in the substrate, a first gate electrode formed on the thick gate insulating layer, a first spacer formed on the thin buffer insulating layer, and a source region and a drain region formed in the substrate.
MagnaChip Semiconductor, Ltd.
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Young Bae Jae Hyung Kwang Il Jun Hyun Jin Yeong In Sik
Kim Jang Kim Kim Son Jung