Ward and Smith, P.A.
Methods of fabricating semiconductor devices including complementary metal oxide semiconductor transistors
Methods of fabricating semiconductor device are provided including forming first and second material layers for a first transistor using epitaxial growth processes. A recess region is formed by partially etching the first and second material layers. Third and fourth material layers for a second transistor are formed using epitaxial growth processes.
Samsung Electronics Co., Ltd.
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Geun Hee Seung Hun Sunjung Steve Poren Moon Seung Hyun Jung
Jeong Lee Kim Tang Yang Lee