Slater Matsil, LLP
Wrap-around contact plug and method manufacturing same
A method includes forming a source/drain region, and in a vacuum chamber or a vacuum cluster system, preforming a selective deposition to form a metal silicide layer on the source/drain region, and a metal layer on dielectric regions adjacent to the source/drain region. The method further includes selectively etching the metal layer in the vacuum chamber, and selectively forming a metal nitride layer on the metal silicide layer. The selectively forming the metal nitride layer is performed in the vacuum chamber or a vacuum cluster system without vacuum break.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Jyh-Cherng Chi On Chih-Wei Huang-Yi Sung-Li
Sheu Chui Chang Huang Wang