Thompson Hine LLP
Field-effect transistors with fins formed by a damascene-like process
Methods of forming a structure for a fin-type field-effect transistor and structures for a fin-type field-effect transistor. An etch stop layer, a sacrificial layer, and a dielectric layer are arranged in a layer stack formed on a substrate. a plurality of openings are formed that extend through the layer stack to the substrate. A semiconductor material is epitaxially grown inside each of the plurality of openings from the substrate to form a plurality of fins embedded in the layer stack. The sacrificial layer is removed selective to the etch stop layer to reveal a section of each of the plurality of fins.
GLOBALFOUNDRIES Inc.
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Scott David P. Wei Haiting Jinping Shesh Mani Jiehui
Beasor Brunco Zhao Wang Liu Pandey Shu