Harness, Dickey & Pierce, P.L.C.
High electron mobility transistors including lightly doped drain regions and methods of manufacturing the same
High electron mobility transistors (HEMTs) including lightly doped drain (LDD) regions and methods of manufacturing the same. A HEMT includes a source, a drain, a gate, a channel supplying layer for forming at least a 2-dimensional electron gas (2DEG) channel, and a channel formation layer in which at least the 2DEG channel is formed. The channel supplying layer includes a plurality of semiconductor layers having different polarizabilities. A portion of the channel supplying layer is recessed. One of the plurality of semiconductor layers, which is positioned below an uppermost layer is an etching buffer layer, as well as a channel supplying layer.
Samsung Electronics Co., Ltd.
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In-jun Hyuk-soon Jong-seob Ki-ha Jae-joon Jai-kwang
Hwang Choi Kim Hong Oh Shin