Haynes and Boone, LLP
Fin field effect transistor
A fin field effect transistor (FinFET) including a first insulation region and a second insulation region and fin there between. A gate stack is disposed over a first portion of the fin. A strained source/drain material is disposed over a second portion of the fin. The strained source/drain material has a flat top surface extending over the first and second insulation regions. The first insulation region may include a tapered top surface.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Hung-Ming Hung-Ta Shu-Tine Shin-Yeh Chu-Yun
Chen Lin Yang Huang Fu