BiFET semiconductor device having vertically integrated FET and HBT
The invention provides a BiFET semiconductor device vertically integrating a FET and a HBT on the same substrate. The BiFET semiconductor device comprises a HBT structure, a high-resistivity structure, and a FET structure, sequentially formed in this order from bottom to top on a semi-insulating substrate. The high-resistivity structure comprises at least two layers. A first layer is on top of the HBT structure to provide the required high resistivity, while the second layer having a high purity is on top of the first layer to prevent the doped impurity in the first layer to affect the upper FET structure.
Visual Photonics Epitaxy Co., Ltd.
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inventional inventional inventional
Wei-Chou Kun-Chuan Yu-Chung Chao-Hsing
Wang Lin Chin Huang