Schwabe, Williamson & Wyatt, P.C.
Integration of III-V devices on Si wafers
An insulating layer is conformally deposited on a plurality of mesa structures in a trench on a substrate. The insulating layer fills a space outside the mesa structures. A nucleation layer is deposited on the mesa structures. A III-V material layer is deposited on the nucleation layer. The III-V material layer is laterally grown over the insulating layer.
Intel Corporation
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Sanaz K. Marko Han Wui Benjamin Sansaptak Seung Hoon Robert S.
Gardner Radosavljevic Then Chu-Kung Dasgupta Sung Chau