Marger Johnson & McCollom, P.C.
Semiconductor integrated circuit device and method of manufacturing the same
A novel fuse structure for a semiconductor integrated circuit device and the method of manufacturing the semiconductor integrated circuit device is disclosed. The fuse structure is comprised of a first interconnection metal layer formed on a semiconductor substrate; an inter-metal dielectric layer formed on the first interconnection metal layer having a via exposing the first interconnection metal layer; a via plug filling up the via; a metal layer for a fuse and a second interconnection metal layer consecutively deposited on the via plug and the inter-metal dielectric layer; and an opening area exposing the metal layer for a fuse is positioned more than twice the thickness of the second interconnection metal layer from the via. With the present invention, a contact failure which can result from a damage to via plug in a subsequent stripping step can be prevented. Also, a passivation layer formed after opening the fuse area prevents a short-circuit between adjacent fuses in a subsequent laser repairing process.
Samsung Electronics Co., Ltd.
H H
H01L H01L
additional inventional
Seung-Jae Sun-Hoo Tae-Wook
Lee Park Seo