Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Method for forming aluminum oxide as a gate dielectric
A method for forming a gate structure begins by preparing a semiconductor substrate provided with an isolation region formed therein. A thin SiO2 layer is thermally grown on top of the semiconductor device by using a wet H2/O2 or a dry O2. And then, an aluminum oxide layer is formed on top of the semiconductor substrate with doping a dopant in situ. A conductive layer is formed on top of the Al2O3 layer. Finally, the conductive layer and the Al2O3 layer are patterned into the gate structure. The dopant is a material selected from a group consisting of Si, Zr, Hf, Nb or the like.
Hyundai Electronics Industries Co., Ltd.
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Jeong-Youb Se-Aug Jung-Ho Dae-Gyu Hung-Jae
Lee Jang Kim Park Cho