Turocy & Watson, LLP
Low density drain HEMTs
Methods and devices for fabricating AlGaN/GaN normally-off high electron mobility transistors (HEMTs). A fluorine-based (electronegative ions-based) plasma treatment or low-energy ion implantation is used to modify the drain-side surface field distribution without the use of a field plate electrode. The off-state breakdown voltage can be improved and current collapse can be completely suppressed in LDD-HEMTs with no significant degradation in gains and cutoff frequencies.
The Hong Kong University of Science and Technology
H H H
H01L H01L H01L
inventional inventional inventional
Kei May Jing
Lau Chen