Finch & Maloney PLLC
Stressors for compressively strained GaN p-channel
Techniques are disclosed for increasing the performance of III-N p-channel devices, such as GaN p-channel transistors. Increased performance is obtained by applying compressive strain to the GaN p-channel. Compressive strain is applied to the GaN p-channel by epitaxially growing a source/drain material on or in the GaN. The source/drain material has a larger lattice constant than does the GaN and puts the p-channel under compressive strain. Numerous III-N material systems can be used.
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Han Wui Sansaptak Marko
Then Dasgupta Radosavljevic