Cantor Colburn LLP
Semiconductor device with protecting film and method of fabricating the semiconductor device with protecting film
Provided are a semiconductor device and a method of fabricating the semiconductor device, the semiconductor device including: a source trace, a drain trace, and a gate trace placed on a substrate; a transistor which is placed on the drain trace and includes a source pad and a gate pad; insulating films placed between the drain and source traces and between the drain and gate traces on the substrate so as to cover sidewall surfaces of the transistor; a source spray electrode which is placed on the insulating film between the source and drain traces and connects the source pad of the transistor and the source trace; and a gate spray electrode placed on the insulating film between the gate and drain traces and connects the gate pad of the transistor and the gate trace.
Arkansas Power Electronics International, Inc. Rohm Co., Ltd.
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Takukazu Alexander B. Jared
Otsuka Lostetter Hornberger