Armstrong Teasdale LLP
Method of treating a single crystal silicon ingot to improve the LLS ring/core pattern
A method is disclosed for reducing the size and density of defects in a single crystal silicon wafer. The method involves subjected a single crystal silicon ingot to an anneal prior to wafer slicing.
GlobalWafers Co., Ltd.
C C C H H
C30B C30B C30B H01L H01L
inventional inventional inventional inventional inventional
YoungJung UiSung JunHwan WonJin ChanRae JungHan
Lee Jung Ji Choi Cho Kim