IP & T Group LLP
Program method of nonvolatile memory device
According to an aspect of a program method of a nonvolatile memory device, a first program operation for programming a first data stored in a first latch may be performed and a cache program signal may be input for inputting a second data to be programmed subsequently. When the cache program signal is input, a determination is made as to whether a first program verify operation is being performed, and if so, the verify operation is stopped, the second data is input, and the first program verify operation is restarted.
Hynix Semiconductor Inc.
G G G
G11C G11C G11C
inventional inventional additional
Duck Ju Jun Seop Byung Ryul
Kim Chung Kim