Maschoff Brennan
Semiconductor devices and methods of forming the same
An embodiment is a semiconductor device, comprising: a substrate; a plurality of fin structures disposed on the substrate; a plurality of first strained materials disposed on each of the plurality of the fin structures; a plurality of cap layers individually formed on each of the plurality of first strained materials, wherein at least two cap layers are connected to each other; a second strained material disposed on the at least two cap layers which are connected to each other.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H H H H H
H01L H01L H01L H01L H01L
inventional additional additional inventional inventional
Ming-Hua Chih-Chiang Kun-Mu Hsueh-Chang
Yu Chang Li Sung