Kim & Stewart LLP
Semiconductor device
A semiconductor device includes a first conductivity type first semiconductor region, a second conductivity type second semiconductor region, a second conductivity type third semiconductor region, a first conductivity type fourth semiconductor region, a gate insulating portion, a gate electrode, and first and second electrodes. The first semiconductor region includes first and second portions. The second semiconductor region includes third and fourth portions. The gate electrode is on the gate insulating portion and over the first semiconductor region and a portion of the third semiconductor region. The first electrode is on, and electrically connected to, the fourth semiconductor region. The second electrode is over the first portion, the third portion, and the gate electrode, and spaced from the first electrode.
Kabushiki Kaisha Toshiba
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Syotaro Hiroaki Masahiro Hisao Hideyuki
Ono Yamashita Shimura Ichijo Ura