Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism
 A semiconductor device includes a bipolar transistor whose emitter-collector voltage is set to satisfy a condition I.sub.BE <I.sub.CB according to a voltage applied across a base and emitter where I.sub.BE is the base current flowing through a base-emitter path in a forward direction, and I.sub.CB is the base current flowing through a collector-base path in a reverse direction. 
Kabushiki Kaisha Toshiba
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Shigeyoshi Tsuneaki Seiichi Toshiki Akihiro Koji Fujio Takehiro Fumio
Watanabe Fuse Aritome Seshita Nitayama Sakui Masuoka Hasegawa Horiguchi