Non-volatile memory saving cell information in a non-volatile memory array
Systems and methods for saving repair cell address information in a non-volatile magnetoresistive random access memory (MRAM) having an array of MRAM cells are disclosed. A memory access circuit is coupled to the MRAM, and is configured to store failed cell address information in the MRAM.
QUALCOMM Incorporated
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Taehyun Hari M. Jung Pill
Kim Rao Kim