Green, Howard & Mughal LLP
CMOS circuits using n-channel and p-channel gallium nitride transistors
CMOS circuits may formed using p-channel gallium nitride transistors and n-channel gallium nitride transistors, wherein both the p-channel gallium nitride transistors and the n-channel gallium nitride transistors are formed on a single layered structure comprising a polarization layer deposited on a first gallium nitride layer and a second gallium nitride layer deposited on the polarization layer. Having both n-channel gallium nitride transistors and p-channel gallium nitride transistors s on the same layer structure may enable “all gallium nitride transistor” implementations of circuits including logic, digital, and analog circuitries spanning low supply voltages to high supply voltages.
Intel Corporation
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Sansaptak Robert S. Marko Han Wui
Dasgupta Chau Radosavljevic Then