Fliesler, Dubb, Meyer & Lovejoy LLP
Method of selectively annealing damaged doped regions
 A method of forming a region of impurity in a semiconductor substrate with minimal damage. The method includes the steps of: forming a reaction-inhibiting impurity region in the semiconductor substrate to a depth below the semiconductor substrate; and applying laser energy to the semiconductor substrate at a sufficient magnitude to liquify the semiconductor substrate in the region. 
Advanced Micro Devices, Inc.
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Sunil D. Xiao-Yu Emi
Mehta Li Ishida