JCIPRNET
Memory devices with selector layer and methods of forming the same
A memory device includes a memory cell, a selector layer and a first work function metal layer. The selector layer is disposed between a first electrode and a second electrode over the memory cell. The first work function metal layer is disposed between the selector layer and the first electrode.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional additional inventional additional additional inventional inventional inventional inventional additional
Hung-Li Tzu-Chiang Yu-Sheng Jung-Piao Xinyu
Chiang Chen Chen Chiu Bao