McClure, Qualey & Rodack, LLP
Mechanisms for forming radio frequency (RF) area of integrated circuit structure
Embodiments of mechanisms of forming a radio frequency area of an integrated circuit are provided. The radio frequency area of an integrated circuit structure includes a substrate, a buried oxide layer formed over the substrate, and an interface layer formed between the substrate and the buried oxide layer. The radio frequency area of an integrated circuit structure also includes a silicon layer formed over the buried oxide layer and an interlayer dielectric layer formed in a deep trench. The radio frequency area of an integrated circuit structure further includes the interlayer dielectric layer extending through the silicon layer, the buried oxide layer and the interface layer. The radio frequency area of an integrated circuit structure includes an implant region formed below the interlayer dielectric layer in the deep trench and a polysilicon layer formed below the implant region.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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inventional inventional inventional inventional
Chih-Ping Keng-Yu Chun-Hung Wei-Kung Kuo-Yu Chung-Long Kuan-Chi Tsung-Yu
Chao Chen Chen Tsai Cheng Chang Tsai Yang