Patterson & Sheridan, LLP
CVD oxide surface pre-conditioning by inductively coupled O2 plasma
A method and apparatus for conditioning an oxide surface during a semiconductor device formation process is provided herein. One or more plasma processing operations are performed on a substrate having a fin structure and shallow trench isolation structure (STI) formed thereon. An oxygen containing plasma process may modify surfaces of the STI structure in preparation for an argon containing plasma process. The argon containing plasma process may form a first layer on the fin structure and STI structure and an ammonia fluoride containing plasma process may form a second layer on the first layer. The first and second layers may be removed from the substrate during a subsequent heating process to provide a cleaned fin structure suitable for subsequent processing operations.
APPLIED MATERIALS, INC.
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inventional inventional inventional
Teng-Fang Ping Han
Kuo Hsieh