Kilpatrick Townsend & Stockton LLP
Method for manufacturing low contact resistance semiconductor structure
A method of manufacturing a semiconductor device includes providing a semiconductor structure having a bottom substrate, a sacrificial layer on the bottom substrate, and a top substrate on the sacrificial layer. The sacrificial layer has a first opening exposing a first portion of the bottom substrate and a second opening exposing a second portion of the bottom substrate. The method further includes forming a first metal layer on the top substrate and/or on the exposed first portion of the bottom substrate, forming an adhesive layer on the first metal layer, and forming a second metal layer on the adhesive layer defining one or more pads.
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
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Chao Wei
Zheng Wang