Haynes and Boone, LLP
Dumbbell shaped self-aligned capping layer over source/drain contacts and method thereof
A method includes providing two structures over a substrate and a source/drain (S/D) contact between the structures. Each structure includes a gate, two gate spacers on opposing sidewalls of the gate, and a first capping layer over the gate and the gate spacers. The method further includes recessing the S/D contact to form a trench, in which a top surface of the S/D contact is below a top surface of the gate spacers. The method further includes depositing an inhibitor layer on the S/D contact but not on surfaces of the first capping layer and not on top surfaces of the gate spacers; depositing a liner layer over top and sidewall surfaces of the first capping layer and surfaces of the gate spacers that are exposed in the trench, wherein the liner layer is free from at least a central portion of the inhibitor layer; and removing the inhibitor layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Cheng-Chi Chia-Hao Chih-Hao Lin-Yu Kuan-Lun Li-Zhen
Chuang Chang Wang Huang Cheng Yu