F. Chau & Associates, LLP
Method for manufacturing a metal-insulator-metal capacitor
A method of manufacturing a MIM capacitor having a bottom electrode is provided by forming a metal wire including copper on a substrate. After the metal wire is formed on the substrate, a dielectric film is formed on the metal wire. A top electrode film is formed on the dielectric film, and then the top electrode film is etched to form a top electrode. A hard metallic polymer formed during the etching of the top electrode film is removed using a mixture of an oxygen gas and a fluorocarbon based gas. The lifting of the thin films is effectively prevented, and the yield of the manufacturing process for manufacturing a MIM capacitor is increased. Additionally, the MIM capacitor has a uniform capacitance because the damage to the dielectric film is prevented, and the oxidation of the bottom electrode is also prevented.
Samsung Electronics, Co., Ltd.
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inventional inventional inventional
Sang-Rok Il-Goo Seung-Gun Ju-Hyuk Ho-Sen
Hah Kim Lee Chang Chang