Anova Law Group, PLLC
Electrostatic discharge protection structure and fabricating method thereof
An electrostatic discharge protection structure and a fabricating method thereof are provided. The electrostatic discharge protection structure comprises: a substrate; multiple fin portions arranged on the substrate; a gate structure on the substrate across the fin portions, and on a portion of top surfaces and sidewalls of the fin portions; a first groove in the substrate and overlapping with a first extension pattern of the fin portions; a first doped epitaxial layer filled within the first groove, and being used as a source; a second groove in the substrate and overlapping with a second extension pattern of the fin portions; and a second doped epitaxial layer filled within the second groove, and being used as a drain.
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
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Yong
Li