Muncy, Geissler, Olds & Lowe, P.C.
Resistive memory structure and method for fabricating the same
The present invention discloses a resistive memory structure and a method for fabricating the same. The memory structure comprises a plurality of memory cells. Each memory cell further comprises two separate upper sub-electrodes fabricated from an upper electrode, two separate lower sub-electrodes fabricated from a lower electrode and intersecting the upper sub-electrodes, and a resistive layer arranged between the upper sub-electrodes and the lower sub-electrodes. Thereby, four sub-memory cells are formed in the intersections of the two upper sub-electrodes, the two lower sub-electrodes, and the resistive layer. Thus is increased the density of a memory structure in an identical area.
National Applied Research Laboratories
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Ming-Daou Cho-Lun ChiaHua Wen-Cheng
Lee Hsu Ho Chiu