Leydig, Voit & Mayer, Ltd.
Single-crystal 4H-SiC substrate
A method for manufacturing a single-crystal 4H-SiC substrate includes: preparing a flat 4H-SiC bulk single-crystal substrate; and epitaxially growing a first single-crystal 4H-SiC layer having recesses on the 4H-SiC bulk single-crystal substrate, wherein the first single-crystal 4H-SiC layer has a thickness of X (μm), the recesses have a diameter Y (μm) no smaller than 0.2*X (μm) and no larger than 2*X (μm), and a depth of Z (nm) no smaller than (0.95*X (μm)+0.5 (nm)) and no larger than 10*X (μm).
MITSUBISHI ELECTRIC CORPORATION
Y C C Y C
Y10T C30B C30B Y10T C30B
additional inventional inventional additional inventional
Takanori Kenichi Nobuyuki Zempei Akihito Yoichiro
Tanaka Hamano Tomita Kawazu Ohno Mitani