Strained CMOS on strain relaxation buffer substrate
A FinFET device includes a strain relaxation buffer (SRB) substrate. A set of cut silicon fins is on the SRB substrate. Each fin in the set of cut silicon fins has a pair of long vertical faces and a pair of short vertical faces. Pairs of the cut silicon fins are oriented so that respective short vertical faces of the pair are oriented opposite to each other. A set of cut silicon germanium fins is on the SRB substrate. Each fin in the set of silicon germanium fins has a pair of long vertical faces and a pair of short vertical faces. Pairs of the cut silicon germanium fins are oriented so that respective short vertical faces of the pair are oriented opposite to each other. A set of tensile dielectric structures bridge between the short vertical faces of respective pairs of the cut silicon fins to maintain tensile strain at the fin ends of the pair of cut silicon fins. A set of compressive dielectric structures bridge between the short vertical faces of respective pairs of the cut silicon germanium fins to maintain compressive strain at the fin ends of the pair of cut silicon germanium fins.
International Business Machines Corporation
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inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Balasubramanian Juntao Kangguo
Pranatharthiharan Li Cheng