Magnetic element with storage layer materials
According to an embodiment of the invention, a magnetic tunnel junction (MTJ) element includes a reference ferromagnetic layer, a storage ferromagnetic layer, and an insulating layer. The storage ferromagnetic layer includes a CoFeB sub-layer coupled to a CoFe sub-layer and/or a NiFe sub-layer through a non-magnetic sub-layer. The insulating layer is disposed between the reference and storage ferromagnetic layers.
QUALCOMM Incorporated
H G H
H01L G11C H01L
inventional inventional inventional
Xia Seung Hyuk Xiaochun
Li Kang Zhu