Slater & Matsil, L.L.P.
Fin profile structure and method of making same
A FinFET device may include a first semiconductor fin laterally adjacent a second semiconductor fin. The first semiconductor fin and the second semiconductor fin may have profiles to minimize defects and deformation. The first semiconductor fin comprises an upper portion and a lower portion. The lower portion of the first semiconductor fin may have a flared profile that is wider at the bottom than the upper portion of the first semiconductor fin. The second semiconductor fin comprises an upper portion and a lower portion. The lower portion of the second semiconductor fin may have a flared profile that is wider than the upper portion of the second semiconductor fin, but less than the lower portion of the first semiconductor fin.
Taiwan Semiconductor Manufacturing Company, Ltd.
Chih-Fang Tai-Chun Chih-Tang Chia-Wei Ryan Chia-Jen
Liu Huang Peng Chang Chen