Lowe Hauptman Ham & Berner, LLP
Method for making a disilicide
Methods for fabricating a semiconductor device are disclosed. A metal-rich silicide and/or a mono-silicide is formed on source/drain (S/D) regions. A millisecond anneal is provided to the metal-rich silicide and/or the mono-silicide to form a di-silicide with limited spikes at the interface between the silicide and substrate. The di-silicide has an additive which can lower the electron Schottky barrier height.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chih-Wei Chii-Ming Wen-Chi Mei-Yun Chun-Wen Hung-Chang Wei-Jung
Chang Wu Tsai Wang Nieh Hsu Lin