Slater & Matsil, L.L.P.
Method of depositing an epitaxial layer of SiGe subsequent to a plasma etch
A method of preparing a silicon layer or substrate surface for growing an epitaxial layer of SiGe thereon. The process comprises removing native oxide from the surface of the silicon with an HF solution, and then oxidizing the exposed silicon surface to form a chemically formed layer of silicon oxide of the process damaged silicon surface. The chemically formed layer of silicon oxide is then removed by a second HF cleaning process so as to leave a smooth silicon surface suitable for growing a SiGe layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H
H01L H01L H01L
inventional inventional inventional
Pang-Yen Shih-Chang Shun Wu Chih-Chien Tze-Liang
Tsai Chen Lin Chang Lee