Gibb & Riley, LLC
Self-protected electrostatic discharge field effect transistor (SPESDFET), an integrated circuit incorporating the SPESDFET as an input/output (I/O) pad driver and associated methods of forming the SPESDFET and the integrated circuit
Disclosed are embodiments of a self-protected electrostatic discharge field effect transistor (SPESDFET). In the SPESDFET embodiments, a resistance region is positioned laterally between two discrete sections of a deep source/drain region: a first section that is adjacent to the channel region and a second section that is contacted. The second section of the deep source/drain region is silicided, but the first section adjacent to the channel region and the resistance region are non-silicided. Additionally, the gate structure can be either silicided or non-silicided. With such a configuration, the disclosed SPESDFET provides robust ESD protection without consuming additional area and without altering the basic FET design (e.g., without increasing the distance between the deep source/drain regions and the channel region). Also disclosed are embodiments of integrated circuit that incorporates the SPESDFET as an input/output (I/O) pad driver and method embodiments for forming the SPESDFET and the integrated circuit.
International Business Machines Corporation
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Dustin K. Junjun Robert J. Mahender
Slisher Li Gauthier, Jr. Kumar