Oliff PLC
Semiconductor device and manufacturing method of the same
A semiconductor device may include a semiconductor layer; a source electrode disposed above one main surface of the semiconductor layer; a drain electrode disposed below another main surface of the semiconductor layer; and an insulation gate section. The semiconductor layer may include a drift region of a first conductivity type; a JFET region of the first conductivity type disposed above the drift region; a body region of a second conductivity type disposed above the drift region and adjoining the JFET region; and a source region of the first conductivity type separated from the JFET region by the body region. The insulation gate section may be opposed to a portion of the body region that separates the JFET region and the source region, a space may be provided within the semiconductor layer, and the drift region, the JFET region and the body region may be exposed to the space.
DENSO CORPORATION
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inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Hidemoto Tomohiko
Tomita Mori