Slater Matsil, LLP
Conductive feature formation and structure
Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Yan-Ming Yu-Kai Yu-Ming Yu-Shiuan Chun-Hsien Hung-Hsu Wei-Yip Hong-Mao Chih-Wei Yu-Wen
Tsai Chen Huang Wang Huang Chen Loh Lee Chang Cheng