Cantor Colburn LLP
Tunable on-chip nanosheet resistor
A method of forming an integrated circuit device having a nanosheet resistor includes forming a nanosheet structure having alternating sheets of silicon and silicon germanium. An ion implantation is performed on the nanosheet structure. A thermal anneal is performed on the nanosheet structure. A dielectric oxide is placed around the nanosheet structure. A first contact and a second contact are coupled to the nanosheet structure to form a resistor between the first contact and the second contact. Other embodiments are also described herein.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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inventional inventional additional inventional inventional inventional inventional inventional inventional inventional
Wei Zheng Kangguo Zhenxing
Wang Xu Cheng Bi