Haynes and Boone, LLP
Method of forming an interconnection
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a substrate. A patterned dielectric layer with a plurality of openings is formed on the substrate. A barrier layer is deposited in the openings by a first tool and a sacrificing protection layer is deposited on the barrier layer by the first tool. The sacrificing layer is removed and a metal layer is deposited on the barrier layer by a second tool.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional additional inventional additional inventional inventional inventional
Hsiang-Huan Tz-Jun Ming-Han Chien-Hsin
Lee Kuo Lee Ho