Haynes and Boone, LLP
Water mark defect prevention for immersion lithography
A photoresist material having a polymer that turns soluble to a base solution in response to reaction with acid. The material includes a photo-acid generator (PAG) that decomposes to form acid in response to radiation energy and a quencher capable of neutralizing acid and having a reduced mobility. The photoresist material can thereby prevent water mark defects from immersion lithography.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Ching-Yu
Chang