Haynes and Boone, LLP
Structure and method for FinFET device
The present disclosure provides a fin-like field-effect transistor (FinFET) device. The device includes a substrate having a first region, a second region and a third region. The first region includes a first fin structure, a first high-k (HK)/metal gate (MG) stack wrapping over an upper portion of the first fin structure and a first source/drain features, separated by the first HK/MG stack, over the recessed first fin structure. The second region includes a second fin structure, the first source/drain features over a portion of the recessed second fin structure. The third region includes a dummy gate stack over the second fin structure and the two first regions are separated by the second region, or by the third region.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Zhiqiang Chih-Sheng Kuo-Cheng Ka-Hing
Wu Chang Ching Fung