Stacked tunneling dielectric technology for improving data retention of EEPROM cell
 An improved EEPROM cell structure and a method of fabricating the same is provided so as to improve data retention. The EEPROM cell includes a stacked dielectric structure consisting of a thin tunnel oxide layer and a high-k dielectric layer to function as the tunneling dielectric barrier so as to suppress leakage current. 
Lattice Semiconductor Corp.
H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional additional inventional inventional additional inventional inventional inventional inventional
Qi Sunil D. Xiao-Yu
Xiang Mehta Li