Rossi, Kimms & McDowell LLP
Tunneling field effect transistor
A tunneling field effect transistor according to an embodiment of the present invention includes: a first semiconductor layer having a first conductive type; a second semiconductor layer having a second conductive type and realizing a heterojunction with respect to the first semiconductor layer in a first region; a gate insulating layer over the second semiconductor layer in the first region; a gate electrode layer over the gate insulating layer; a first electrode layer electrically connected to the first semiconductor layer; a second electrode layer electrically connected to the second semiconductor layer; and a first insulating layer interposed between the first semiconductor layer and the second semiconductor layer in a second region adjacent to the first region toward the second electrode layer.
JAPAN SCIENCE AND TECHNOLOGY AGENCY
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Kimihiko Shinichi Hiroaki Hitoshi Mitsuru
Kato Takagi Matsui Tabata Takenaka