Limbach & Limbach L.L.P.
BiCMOS process for forming double-poly MOS and bipolar transistors with substantially identical device architectures
 A fully complementary double-poly BiCMOS process utilizes substantially identical device architectures to form n-channel and p-channel MOS transistors, as well as npn and pnp bipolar transistors. In the double-poly process, the first layer of polysilicon is utilized to form the source and drain of the MOS transistors as well as the base and collector of the bipolar transistors. The second layer of polysilicon is then utilized to form the gate of the MOS transistors as well as the emitter of the bipolar transistors. 
National Semiconductor Corporation
H
H01L
inventional
Hung-Sheng Chih Sieh
Chen Teng