Schwabe, Williamson & Wyatt, P.C.
Selective epitaxially grown III-V materials based devices
A first III-V material based buffer layer is deposited on a silicon substrate. A second III-V material based buffer layer is deposited onto the first III-V material based buffer layer. A III-V material based device channel layer is deposited on the second III-V material based buffer layer.
Intel Corporation
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Niti Benjamin Gilbert Jack T. Marko Niloy Matthew V. Robert S.
Goel Chu-Kung Dewey Kavalieros Radosavljevic Mukherjee Metz Chau