Haynes and Boone, LLP
Method for fabricating fin field effect transistors
A method of fabricating a Fin field effect transistor (FinFET) includes providing a substrate having a first fin and a second fin extending above a substrate top surface, wherein the first fin has a top surface and sidewalls and the second fin has a top surface and sidewalls. The method includes forming an insulation layer between the first and second fins. The method includes forming a first gate dielectric having a first thickness covering the top surface and sidewalls of the first fin using a plasma doping process. The method includes forming a second gate dielectric covering the top surface and sidewalls of the second fin having a second thickness less than the first thickness. The method includes forming a conductive gate strip traversing over both the first gate dielectric and the second gate dielectric.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Yi-Tang Chi-Yuan Clement Hsingjen Chih-Sheng Ling-Yen
Lin Shih Wann Chang Yeh