Slater Matsil, LLP
Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bending
A method includes depositing a silicon layer, which includes first portions over a plurality of strips, and second portions filled into trenches between the plurality of strips. The plurality of strips protrudes higher than a base structure. The method further includes performing an anneal to allow parts of the first portions of the silicon layer to migrate toward lower parts of the plurality of trenches, and performing an etching on the silicon layer to remove some portions of the silicon layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H H H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional additional inventional inventional inventional inventional additional inventional inventional inventional inventional additional inventional inventional additional additional additional inventional inventional additional additional additional
Chia-Ao Pin-Ju Chien-Hao De-Wei
Chang Liang Chen Yu