Lowe Hauptman Ham & Berner, LLP
Methods of forming semiconductor structures
A method of forming a semiconductor structure includes forming an opening in a substrate. A dielectric layer is formed and substantially conformal to the opening. A sacrificial structure is formed within the opening, covering a portion of the dielectric layer. A portion of the dielectric layer is removed by using the sacrificial structure as an etch mask layer. The sacrificial structure is removed.
Taiwan Semiconductor Manufacturing Company, Ltd.
B
B81C
inventional
Feng-Jia Hung Chang Hsing-Fei Chia-Hua Jieh-Jang
Shiu Hsieh Chou Chu Chen