Cantor Colburn LLP
VFET devices with improved performance
Vertical field effect transistor (VFET) structures and methods of fabrication with improved junction sharpness and reduced parasitic capacitance between the top source or drain and the surrounding metal gate includes a non-uniform top spacer in the top source or drain formed by an oxidation process. The top spacer has a thickness that is thinner at an interface between the top source or drain region and the vertically oriented channel region of the fin structure relative to the thickness of the top spacer layer away from the interface.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Juntao Kangguo Shogo Choonghyun
Li Cheng Mochizuki Lee