Volentine Francos, PLLC
Semiconductor memory device with bit lines having reduced cross-talk
A semiconductor memory device is fabricated to have a multi-layered structure on a semiconductor substrate. The semiconductor memory device includes ground lines, which are formed in a first conductive layer; bit lines, which are formed in a second conductive layer; and word lines, which are formed in a third conductive layer. The bit lines are not formed in the uppermost conductive layer.
Oki Electric Industry Co., Ltd.
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Hidekazu
Kikuchi