Harness, Dickey & Pierce, P.L.C.
Integrated circuit device and method of manufacturing the same
An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.
Samsung Electronics Co., Ltd.
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Sun-wook Sun-ghil Myung-il Jung-han Seung-hun Hyun-jung Jeong-yun
Kim Lee Kang Lee Lee Lee Lee