McDermott Will & Emery LLP
Method of fabricating a semiconductor device having a T-shape in the metal gate line-end
A method of fabricating a metal gate structure in a semiconductor device is disclosed. The method comprises removing a dummy poly gate, removing IL oxide and STI using a dry etch process and a wet lateral etch process to form a T-shape void in the semiconductor device, and depositing metal gate material in the T-shape void to form a T-shape structure in a metal gate line-end. A semiconductor device fabricated from a process that included the removal of a dummy poly gate is disclosed. The semiconductor device comprises an OD fin and a metal gate fabricated above a section of the OD fin and adjacent to a side section of the OD fin. The metal gate has a T-shape structure in a metal gate line-end. The T-shape structure was formed by removing IL oxide and STI using a dry and a wet lateral etch process to form a T-shape void.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Guan-Jie Chien-Chih Chia-Der Chien-Hung
Shen Lin Chang Yeh