Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Plasma etching method
A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is performed by converting a processing gas comprising an active species generating gas which includes a compound having carbon and fluorine, and a nonreactive gas which includes xenon gas into a plasma. The nonreactive gas further includes argon gas.
Tokyo Electron Limited
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Kazuya Yasushi Masahiro Hideki Katsuhiko Shin Akinori Noriyuki
Kato Inata Ogasawara Mizuno Ono Okamoto Kitamura Kobayashi