Ryan, Mason & Lewis, LLP
Method and structure for forming vertical transistors with shared gates and separate gates
A method for manufacturing a semiconductor device includes forming a fin on a substrate, removing one or more portions of the fin prior to forming a gate structure on the fin, forming the gate structure on the fin, and simultaneously removing one or more additional portions of the fin and one or more portions of the gate structure aligned with the one or more additional portions of the fin to create a fin edge portion aligned with a gate structure edge portion.
International Business Machines Corporation
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Kangguo Peng Zhenxing Juntao
Cheng Xu Bi Li