Myers Bigel Sibley & Sajovec, PA
Methods of forming a semiconductor device
Methods of forming a semiconductor device are provided. The methods may include forming first and second layers that are alternately and repeatedly stacked on a substrate, and forming an opening penetrating the first and second layers. The methods may also include forming a first semiconductor pattern in the opening. The methods may additionally include forming an insulation pattern on the first semiconductor pattern. The methods may further include forming a second semiconductor pattern on the insulation pattern. The methods may also include providing dopants in the first semiconductor pattern. Moreover, the methods may include thermally treating a portion of the first semiconductor pattern to form a third semiconductor pattern.
Samsung Electronics Co., Ltd.
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Kihyun Daehyun Dongwoo Myoungbum Yong-Hoon Hanvit Sunghae Sangryol Ju-Eun Jung Ho Chaeho
Hwang Jang Kim Lee Son Yang Lee Yang Kim Kim Kim