Cantor Colburn LLP
FinFET resistive switching device having interstitial charged particles for memory and computational applications
Embodiments of the invention are directed to a resistive switching device (RSD). A non-limiting example of the RSD includes a fin-shaped element formed on a substrate, wherein the fin-shaped element includes a source region, a central channel region, and a drain region. A gate is formed over a top surface and sidewalls of the central channel region. The fin-shaped element is doped with impurities that generate interstitial charged particles configured to move interstitially through a lattice structure of the fin-shaped element under the influence of an electric field applied to the RSD.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Arvind Joel P. Yun Seog Devendra K. Ning Babar
Kumar de Souza Lee Sadana Li Khan