J.C. Patents
Method for fabricating asymmetric semiconductor device
A method for fabricating an asymmetric semiconductor device is provided. A substrate formed with at least one base structure of MOSFET thereon is provided, wherein the base structure includes a gate over the substrate and a source extension and a drain extension in the substrate beside the gate. The base structure is then treated with an anisotropic annealing source inclined in the source-to-drain direction of the base structure relative to the normal of the substrate, such that one of the source and drain extensions is shadowed by the gate and the other is annealed more.
United Microelectronics Corp.
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inventional inventional additional inventional
Yu-Kun Yi-Cheng Earic Gene
Chen Chen Liu Li