Finnegan, Henderson, Farabow, Garrett & Dunner
Analog switch device having threshold change reducing means
 An analog switch device has p- and n-channel metal oxide semiconductor field effect transistors, each having a source electrode, a drain electrode, a gate electrode and a substrate electrode. The p- and n-channel metal oxide semiconductor field effect transistors are connected parallel to each other. First and second analog signals are received and produced at a pair of nodes between the p- and n-channel metal oxide semiconductor field effect transistors. Control signals which are inverted with each other are respectively supplied to the gate electrodes of the p- and n-channel metal oxide semiconductor field effect transistors. A voltage buffer circuit is provided for applying a predetermined voltage to the substrate electrode of one of the p- and n-channel metal oxide semiconductor field effect transistors so as to decrease a change in a threshold voltage due to the source-substrate bias effect. 
Tokyo Shibaura Denki Kabushiki Kaisha
H H
H03K H03K
additional inventional
Yasoji Akira Kenji
Suzuki Yamaguchi Matsuo