Tung & Associates
Vertical split gate field effect transistor (FET) device
Within both a split gate field effect transistor (FET) device and a method for fabricating the split gate field effect transistor (FET) device there is formed within a semiconductor substrate a trench within whose sidewall is fully contained a channel region within the split gate field effect transistor (FET) device. Similarly, there is also formed within the split gate field effect transistor a floating gate electrode within the trench and covering within the trench a lower sub-portion of the channel region. Finally, the floating gate electrode in turn has formed vertically and horizontally overlapping thereover within the trench a control gate electrode which covers an upper sub-portion of the channel. The split gate field effect transistor (FET) device is fabricated with enhanced areal density and enhanced performance.
Taiwan Semiconductor Manufacturing Co., Ltd
H H
H01L H01L
inventional inventional
Di-Son Chung-Li Chrong Jung Chia-Ta Wen-Ting Sheng-Wei Jack
Kuo Chang Lin Hsieh Chu Tsao Yeh