Nixon Peabody LLP
Semiconductor device and method for fabricating the same
A semiconductor device of the present invention includes an electrode, which is formed over a substrate and contains ruthenium. Crystal grains of ruthenium in the electrode have stepped surfaces.
Matsushita Electric Industrial Co., Ltd.
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inventional additional additional
Akihiko Yoshihiro Yasutoshi
Tsuzumitani Mori Okuno