Dual gate TFT substrate structure utilizing COA skill
The present invention provides a dual gate TFT substrate structure utilizing COA skill, comprising a substrate (1), a bottom gate (2) positioned on the substrate (1), a bottom gate isolation layer (3) covering the bottom gate (2) and the substrate (1), an active layer (4) positioned on the bottom gate isolation layer (3) above the bottom gate (2), an etching stopper layer (5) positioned on the active layer (4) and the bottom gate isolation layer (3), a source/a drain (6) positioned on the etching stopper layer (5) and respectively contacted with two ends of the active layer (4), color filter (8) positioned on the source/the drain (6) and the etching stopper layer (5), and a top gate (9) positioned on the color filter (8) and contacted with the bottom gate (2); the active layer (4) and the thin film of the previous manufacture process can be effectively protected and the original property and the stability of the active layer (4) and the thin film of the previous manufacture process can be ensured.
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
H H H H H H H H H H H H G H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L G02F H01L
additional inventional inventional additional inventional additional inventional inventional inventional additional inventional additional additional inventional
Chihyuan Wenhui Chihyu Shimin Xiaowen Longqiang Hejing
Tseng Li Su Ge Lv Shi Zhang