Haynes and Boone, LLP
Blocking layer material composition and methods thereof in semiconductor manufacturing
The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer over a substrate, wherein the material layer is soluble in a solvent; forming a blocking layer on the material layer; and forming a photoresist layer on the blocking layer, wherein the photoresist layer includes a photosensitive material dissolved in the solvent. The method further includes exposing the photoresist layer; and developing the photoresist layer in a developer.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chin-Hsiang Chen-Yu Ching-Yu Siao-Shan
Lin Liu Chang Wang