WPAT, P.C.
Backside illuminated image sensor and method of manufacturing the same
A back side illuminated (BSI) image sensor device, includes: a substrate including a front side and a back side opposite to the front side; a radiation-sensing region disposed in the substrate; and a deep trench isolation (DTI) grid disposed in the substrate and defining the radiation-sensing region. The DTI grid extends from the back side toward the front side, and includes a segmented strip in a top view from the back side.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Kuo-Cheng Yung-Lung Chun-Hao Yun-Wei Tsung-Han
Lee Hsu Chou Cheng Tsai