Posz & Bethards, PLC
Semiconductor pressure sensor having rounded corner portion of diaphragm
A semiconductor pressure sensor has a recess formed on a semiconductor substrate. The recess has a sidewall, a bottom wall that serves as a diaphragm for detecting a pressure, and a corner portion provided between the sidewall and the bottom wall and having a radius of curvature R. The radius of curvature R satisfies a formula of:R/S=526&middot;(d/S)2&#8722;0.037&middot;(d/S)+a1, where S is an area of the diaphragm, d is a thickness of the diaphragm, and a1 is in a range of 9.6&times;10&#8722;7 to 16&times;10&#8722;7 inclusive.
Denso Corporation
B B B G
B81B B81B B81B G01L
additional inventional additional inventional
Inao Yasutoshi Yuichiro
Toyoda Suzuki Murata