IP & T Group LLP
Semiconductor device with metal gate and high-k materials and method for fabricating the same
A semiconductor device includes a substrate including first and second regions. A first gate stack structure containing a first effective work function adjust species is formed over the first region and a second gate stack structure containing a second effective work function adjust species is formed over the second region. A channel region is formed under the first gate stack structure and contains a threshold voltage adjust species.
SK Hynix Inc.
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Seung-Mi Yun-Hyuck
Lee Ji