WPAT, P.C., Intellectual Property Attorneys
Transistor structure with field plate for reducing area thereof
In some embodiments, a BJT structure includes a base region, an emitter region formed in the base region and including an emitter doping region, a collector region including a collector doping region, an insulating structure and a field plate. The base region forms a junction with the collector region between the emitter and collector doping regions. The field plate is formed over an insulating structure over the junction. A first distance between the corresponding emitter and collector doping regions to the junction is shorter than a second distance in another BJT structure without the field plate corresponding to the first distance. The first distance causes a breakdown of the junction corresponding to a first breakdown voltage value between the emitter and collector doping regions being substantially the same or greater than a second breakdown voltage value of the other BJT structure corresponding to the first breakdown voltage value.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Yu-Chang Jing-Ying Shui-Ming
Jong Chen Cheng