Rothwell, Figg, Ernst & Manbeck, P.C.
Plasma processing apparatus and plasma processing method
A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna.
Tokyo Electron Limited
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Kazuki Jun Yohei Hachishiro Chishio Masashi
Denpoh Yamawaku Yamazawa Iizuka Koshimizu Saito