Hultquist IP
Amorphous Ge/Te deposition process
Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.
Advanced Technology Materials, Inc.
C Y H C C C C H H C
C07F Y10T H01L C23C C23C C23C C23C H01L H01L C23C
inventional additional inventional inventional inventional inventional inventional inventional inventional inventional
Jeffrey F. Philip S. H. Chongying Weimin Tianniu Matthias William
Roeder Chen Xu Li Chen Stender Hunks