Haynes and Boone, LLP
Lithography process with enhanced etch selectivity
The present disclosure provides a method for lithography patterning. The method includes coating a bottom layer on a substrate, wherein the bottom layer includes a carbon-rich material; forming a middle layer on the bottom layer, wherein the middle layer has a composition such that its silicon concentration is enhanced to be greater than 42% in weight; coating a photosensitive layer on the middle layer; performing an exposing process to the photosensitive layer; and developing the photosensitive layer to form a patterned photosensitive layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chin-Hsiang Ching-Yu Chen-Yu
Lin Chang Liu