Quarles & Brady LLP
Semiconductive shield free of weld lines and protrusions
Semiconductive shield layers for power cable constructions are made from a composition that has: (A) A nonpolar, ethylene-based polymer having a density of greater than (>) 0.90 glee and a melt index of >20 g/10 min at 190° C./2.16 Kg; (B) A polar polymer consisting of ethylene and an unsaturated alkyl ester having 4 to 20 carbon atoms; (C) Acetylene carbon black; and (D) A curing agent; with the provisos that (1) the composition has a phase separated structure, and (2) the weight ratio of nonpolar polymer to polar polymer is from 0.25 to 4.
Dow Global Technologies LLC
C H C C C C C H
C08L H01B C08L C08K C08L C08L C08L H01B
inventional inventional additional inventional inventional inventional inventional inventional
Wei Xiaomei Hongyu Xiaoxiong Youjun Yabin
Li Song Chen Miao Wu Sun