Qualcomm Incorporated-Toler
Electrode structure for resistive memory device
A semiconductor device includes an interconnect layer and a bottom electrode of a resistive memory device. The bottom electrode is coupled to the interconnect layer, and the bottom electrode is comprised of cobalt tungsten phosphorus (CoWP).
QUALCOMM Incorporated
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Xia Junjing Yu Seung Hyuk
Li Bao Lu Kang