Wood, Herron & Evans LLP
Silicon controlled rectifier structure with improved junction breakdown and leakage control
Device structures and design structures for a silicon controlled rectifier, as well as methods for fabricating a silicon controlled rectifier. The device structure includes first and second layers of different materials disposed on a top surface of a device region containing first and second p-n junctions of the silicon controlled rectifier. The first layer is laterally positioned on the top surface in vertical alignment with the first p-n junction. The second layer is laterally positioned on the top surface of the device region in vertical alignment with the second p-n junction. The material comprising the second layer has a higher electrical resistivity than the material comprising the first layer.
International Business Machines Corporation
H G H H H H
H02H G06F H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional
Alain Robert J. Junjun Kiran V.
Loiseau Gauthier, Jr. Li Chatty