Slater & Matsil, L.L.P.
One transistor and one resistive (1T1R) random access memory (RRAM) structure with dual spacers
The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a top portion, a resistive material layer on the bottom electrode having a width that is same as a width of the top portion of the bottom electrode; a capping layer over the bottom electrode, a first spacer surrounding the capping layer and a top electrode, a second spacer surround the top portion of the bottom electrode and the first spacer, and the top electrode. The RRAM cell further includes a conductive material connecting the top electrode of the RRAM structure to a metal layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Ching-Pei Yu-Wen Chih-Yang Kuo-Chi Chin-Chieh Hsia-Wei Wen-Ting
Hsieh Liao Chang Tu Yang Chen Chu