Sonnenschein, Nath & Rosenthal
Method of manufacturing crystalline semiconductor material and method of manufacturing semiconductor device
Disclosed are a method manufacturing a crystalline semiconductor material capable of improving the crystallinity and a method of manufacturing a semiconductor device using the same. An amorphous film made of silicon (Si) is formed on a substrate with a protective film inbetween. Then, a short-wavelength energy beam is irradiated to the amorphous film as a first heat treatment, thereby forming a crystalline film made of quasi-single crystal. Subsequently, another short-wavelength energy beam is irradiated to the crystalline film as a second heat treatment in order to selectively fuse and re-crystallize only the grain boundary of the crystalline film and the neighboring region. As a result, a crystalline film with excellent crystallinity can be obtained.
Sony Corporation
H H C H H H H C C H
H01L H01L C30B H01L H01L H01L H01L C30B C30B H01L
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Toru Yoshifumi Takashi Setsuo
Hiraga Mori Noguchi Usui