Coudert Brothers
Pattern or via structure formed through supplemental electron beam exposure and development to remove image residue
 Methods of forming patterns in photo-sensitive resist layers with high aspect ratio features are described. The photosensitive layer is patterned exposed to actinic radiation and thereafter developed. For high aspect ratio patterns, the inventors have often observed a residue of resist material at the bottom of such features, and that this residue interferes with subsequent processing, such as filling the pattern with metal by a plating operation. To remove this residue, the patterned locations of the resist are exposed to a low dose of low-energy electron beam radiation, preferably having energy of less than 6 KeV and dosage of less than 200 .mu.C/cm.sup.2. After the electron beam exposure, the aperture is again exposed to a developer solution, which may be of the same composition as the developer initially used to develop the patterns. 
Fujitsu Limited
G Y G H
G03F Y10S G03F H01L
inventional additional inventional additional
Solomon I. William T. Wen-chou Vincent
Beilin Chou Wang