Myers Bigel Sibley & Sajovec
CMOS image device and local impurity region and method of manufacturing the same
According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.
Samsung Electronics Co., Ltd.
H H
H01L H01L
inventional inventional
Seok-ha Jong-Wan Jae-seob
Lee Jung Roh