Tutunjian & Bitetto, P.C.
Confining filament at pillar center for memory devices
A semiconductor device with resistive memory includes a bottom electrode disposed on a base structure, the bottom electrode having a structure that tapers up from the base structure to a tip of the bottom electrode. The semiconductor device also includes sidewall spacers on the sides of the bottom electrode, an interlayer dielectric deposition (ILD) outside the sidewall spacers, and a top dielectric layer disposed over the bottom electrode, and the sidewall spacers. The semiconductor device further includes a top electrode deposited over the bottom electrode within the sidewall spacers. A filament formation region is formed at the tip of the bottom electrode.
International Business Machines Corporation
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Dexin Juntao Kangguo Takashi
Kong Li Cheng Ando