Method for manufacturing minute silicon mechanical device
 A method for manufacturing a minute silicon mechanical device, which includes the steps of forming a diffusion region by doping a predetermined portion of a silicon substrate with an impurity of high density; forming an epitaxial layer over the silicon substrate including the diffusion region and forming an oxide layer over the epitaxial layer; forming an ohmic contact layer at the lower surface of the silicon substrate; patterning the oxide layer to have a striped configuration at that portion of the oxide layer corresponding to the predetermined portion of the diffusion region, thus exposing a predetermined portion of the epitaxial layer; forming a plurality of beams having a striped configuration by etching the exposed portion of the epitaxial layer, using the oxide layer as a mask and then removing the oxide layer; and removing the diffusion region below the plurality of beams. 
LG Semicon Co., Ltd.
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Seok-Soo
Lee