Eschweiler & Associates, LLC
L-shaped capacitor in thin film storage technology
The present disclosure relates to a non-planar FEOL (front-end-of-the-line) capacitor comprising a charge trapping dielectric layer disposed between electrodes, and an associated method of fabrication. In some embodiments, the non-planar FEOL capacitor has a first electrode disposed over a substrate. A charge trapping dielectric layer is disposed onto the substrate at a position adjacent to the first electrode. The charge trapping dielectric layer has an “L” shape, with a lateral component extending in a first direction and a vertical component extending in a second direction. A second electrode is arranged onto the lateral component and is separated from the first electrode by the first component.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H H H H H H H
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Chien-Hung Wei Cheng Harry-Hak-Lay
Chang Wu Chuang