F. Chau & Associates, LLC
Flash memory device and writing method thereof
A flash memory device includes a memory cell array including a plurality of memory cells. A data writing buffer temporarily stores data to be written into the memory cells. A control circuit controls a write operation of the memory cells. A decoder decodes write address of the memory cell in response to the control circuit and regulating a constant current to flow through a selected bit line with reference to a result of the decoding. The decoder decodes an address and controls a current in units of a memory cell during a normal writing mode and decodes an address and controls a current in units of a memory block during a test writing mode.
Samsung Electronics Co., Ltd.
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Seung-Won
Lee