Method of fabricating transistors and a transistor structure for improving short channel effect and drain induced barrier lowering
A method of fabricating transistors includes: providing a substrate including an N-type well and P-type well; forming a first gate on the N-type well and a second gate on the P-type well, respectively; forming a third spacer on the first gate; forming an epitaxial layer in the substrate at two sides of the first gate; forming a fourth spacer on the second gate; forming a silicon cap layer covering the surface of the epitaxial layer and the surface of the substrate at two sides of the fourth spacer; and forming a first source/drain doping region and a second source/drain doping region at two sides of the first gate and the second gate respectively.
United Microelectronics Corp.
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Wen-Han Tsai-Fu Cheng-Tung Ta-Kang Tzyy-Ming Kun-Hsien Shyh-Fann
Hung Chen Huang Lo Cheng Lee Ting