Eschweiler & Potashnik, LLC
Backside illuminated image sensor with negatively charged layer
The present disclosure relates to a semiconductor image sensor device. In some embodiments, the semiconductor image sensor device includes a semiconductor substrate having a first surface configured to receive incident radiation. A plurality of sensor elements are arranged within the semiconductor substrate. A first charged layer is arranged on an entirety of a second surface of the semiconductor substrate facing an opposite direction as the first surface. The second surface is between the first charged layer and the first surface of the semiconductor substrate.
Taiwan Semiconductor Manufacturing Co., Ltd.
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inventional additional inventional inventional
Yeur-Luen Cheng-Ta Shyh-Fann Ching-Chun Chih-Yu
Tu Wu Ting Wang Lai