Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one side-to-side short or leakages, and at least one via respective tip-to-tip short, side-to-side short, and via open test areas
A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one side-to-side short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, side-to-side short, and via open test areas.
PDF Solutions, Inc.
H G G H H H H H H H G H H H H G H H H G H G H H H G G H H G H H H
H01L G06F G06F H01L H01L H01L H01L H01L H01L H01L G06F H01L H01L H01L H01L G01R H01L H01L H01L G01R H01L G06F H01L H01L H01L G06F G06F H01L H01L G01R H01L H01L H01L
inventional additional inventional inventional inventional inventional inventional inventional inventional inventional additional additional additional inventional inventional additional inventional inventional inventional inventional inventional additional inventional inventional additional additional inventional inventional additional inventional inventional inventional inventional
Christopher Vyacheslav Sheng-Che Marci Indranil Hans Timothy Sherry Carl Andrzej Conor Kimon Tomasz Dennis Rakesh John Jonathan Jeremy Marcin Stephen Hideki Simone Larg Nobuharu Markus Kelvin
Hess Rovner Lin Liao De Eisenmann Fiscus Lee Taylor Strojwas O'Sullivan Michaels Brozek Ciplickas Vallishayee Kibarian Haigh Cheng Strojwas Lam Matsuhashi Comensoli Weiland Yokoyama Rauscher Doong