Heslin Rothenberger Farley & Mesiti P.C.
Reducing liner corrosion during metallization of semiconductor devices
Reducing liner corrosion during metallization of semiconductor devices at BEOL includes providing a starting metallization structure, the structure including a bottom layer of dielectric material with a via therein, a liner lining the via and extending over upper edges thereof, the lined via over filled with a conductive material, recessing the conductive material down to the liner, further selectively recessing the conductive material below the upper edges of the via without damaging the liner, and forming a cap of the liner material on the conductive material.
GLOBALFOUNDRIES INC.
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Qiang Jin Ping Haigou Huang Jiehui Zhiguo
Fang Liu Huang Liu Shu Sun