Process for forming a crown shaped capacitor structure for a DRAM device
 A process for forming crown shaped capacitor structures, for a DRAM device, has been developed. The process features the use of a disposable insulator layer, applied prior to photolithographic and dry etching procedures, used to define the capacitor upper plate structures. The disposable insulator layer alleviates the topography effects presented by crown shaped storage node structures, relaxing the complexity of the patterning of the capacitor upper plate structures. 
Taiwan Semiconductor Manufacturing Company
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H01L H01L
additional inventional
Yu-Hua Cheng-Ming Wen-Chuan
Lee Wu Chiang