Cantor Colburn LLP
Multiple finFET Formation with epitaxy separation
A semiconductor device including an nFET device and pFET device adjacent one another. The semiconductor device includes a shallow trench isolator (STI), a gate and a substrate having fins extending upwardly through the STI. The fins include: nFET fins disposed in an nFET epi well formed in the STI and disposed in a pFET epi well formed in the STI, a top the STI being above a top of the fins.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Peng Juntao Kangguo
Xu Li Cheng