Myers Bigel Sibley & Sajovec, P.A.
Semiconductor devices having a contact plug and fabrication methods thereof
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes an insulating layer that is formed on a supporting layer and has a contact hole. A first contact plug is formed on an inner wall and bottom of the contact hole. A second contact plug buries the contact hole and is formed on the first contact plug. A conductive layer is connected to the first contact plug and the second contact plug. The bottom thickness of the first contact plug formed on the bottom of the contact hole is thicker than the inner wall thickness of the first contact plug formed on the inner wall of the contact hole.
Samsung Electronics Co., Ltd.
H H H
H01L H01L H01L
inventional additional inventional
Oh-seong Jin-yong Jung-hee Wan-don Yong-suk Ki-chul
Kwon Kim Chung Kim Tak Kim