Harness, Dickey & Pierce, P.L.C.
Transistors and methods of manufacturing the same
A transistor includes a device portion and a collector layer. The device portion is in a first side of a semiconductor substrate, and includes a gate and an emitter. The collector layer is on a second side of the semiconductor substrate, which is opposite to the first side. The collector layer is an impurity-doped epitaxial layer and has a doping profile with a non-normal distribution.
SAMSUNG ELECTRONICS CO., LTD.
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inventional inventional inventional
Jai-kwang Nam-young Min-kwon Yong-cheol Hyung-su Ji-hoon Hyuk-soon
Shin Lee Cho Choi Jeong Lee Choi