Harness, Dickey & Pierce, P.L.C.
Storage node having a metal-insulator-metal structure, non-volatile memory device including a storage node having a metal-insulator-metal structure and method of operating the same
A storage node having a metal-insulator-metal structure, a non-volatile memory device including a storage node having a metal-insulator-metal (MIM) structure and a method of operating the same are provided. The memory device may include a switching element and a storage node connected to the switching element. The storage node may include a first metal layer, a first insulating layer and a second metal layer, sequentially stacked, and a nano-structure layer. The storage node may further include a second insulating layer and a third metal layer. The nano-structure layer, which is used as a carbon nano-structure layer, may include at least one fullerene layer.
Samsung Electronics Co., Ltd.
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Choong-rae Eun-hong In-kyeong Sang-mock Seung-woon El Mostafa Chang-wook
Cho Lee Yoo Lee Lee Bourim Moon