The Marbury Law Group PLLC
Three-dimensional memory device with thickened word lines in terrace region
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate. Memory stack structures are located in a memory array region, each of which includes a memory film and a vertical semiconductor channel. Contact via structures located in the terrace region and contact a respective one of the electrically conductive layers. Each of the electrically conductive layers has a respective first thickness throughout the memory array region and includes a contact portion having a respective second thickness that is greater than the respective first thickness within a terrace region. The greater thickness of the contact portion prevents an etch-through during formation of contact via cavities for forming the contact via structures.
SANDISK TECHNOLOGIES LLC
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Yoshihiro Raghuveer S. Senaka Krishna Yanli Jin Murshed
Kanno Makala Kanakamedala Zhang Liu Chowdhury