Hauptman Ham, LLP
Semiconductor device, corresponding mask and method for generating layout of same
A semiconductor structure includes: first and second active regions arranged in a first grid oriented in a first direction; and gate electrodes arranged spaced apart in a second grid and on corresponding ones of the active regions, the second grid being oriented in a second direction, the second direction being substantially perpendicular to the first direction; wherein: the first and second active regions are separated, relative to the second direction, by a gap; each gate electrode includes a first segment and a gate extension; each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height HEXT, where HEXT≤(≈150 nm); and each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular. In an embodiment, the height HEXT is HEXT≤(≈100 nm).
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
H H H H G H G G H G H H H G G H G H G G H G G
H01L H01L H01L H01L G06F H01L G03F G06F H01L G06F H01L H01L H01L G06F G06F H01L G03F H01L G03F G03F H01L G03F G03F
inventional additional inventional inventional additional inventional additional inventional additional inventional additional additional additional inventional additional inventional additional additional additional inventional additional inventional additional
Yu-Jen I-Shan Ling-Sung Chan-yu
Chen Huang Wang Hung