Haynes and Boone, LLP
Photolithography method to prevent photoresist pattern collapse
A method comprises forming a BARC layer on a substrate, treating the BARC layer to make its surface hydrophilic, forming a photoresist layer on the treated BARC layer, exposing the photoresist layer to a predetermined pattern, and developing the photoresist layer to form patterned photoresist.
Taiwan Semiconductor Manufacturing Company, Ltd.
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G03F G03F
additional inventional
Kuei Shun Ching-Yu Bang-Ching
Chen Chang Ho