Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Plasma processing apparatus and method
A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.
Tokyo Electron Limited
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Manabu Kunihiko Yoshinobu Masaru Ryuji Masashi Yohei Kazuo Noriyuki Daisuke Hiroki Akira Naoki Chishio Toshihiro Hidetoshi Manabu
Sato Hinata Ooya Sugimoto Ohtani Saito Yamazawa Kibi Kobayashi Yano Yamazaki Koshiishi Matsumoto Koshimizu Hayami Hanaoka Iwata