Sterne, Kessler, Goldstein & Fox P.L.L.C.
Ferroelectric structure for semiconductor devices
The present disclosure relates to a semiconductor device includes a substrate and first and second spacers on the substrate. The semiconductor device includes a gate stack between the first and second spacers. The gate stack includes a gate dielectric layer having a first portion formed on the substrate and a second portion formed on the first and second spacers. The first portion includes a crystalline material and the second portion comprises an amorphous material. The gate stack further includes a gate electrode on the first and second portions of the gate dielectric layer.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Cheng-Ming Chih-Yu Chi On Bo-Feng Huang-Lin Sai-Hooi Ziwei
Lin Chang Chui Young Chao Yeong Fang