Myers Bigel Sibley & Sajovec, P.A.
Method of fabricating semiconductor integrated circuit device
A method of fabricating a semiconductor integrated circuit (IC) device can include forming a first silicide layer on at least a portion of a transistor on a substrate, forming nitrogen in the first silicide layer to form a second silicide layer, forming a first stress layer having a tensile stress on the substrate having the transistor formed thereon, and irradiating the first stress layer with ultraviolet (UV) light to form a second stress layer having greater tensile stress than the first stress layer.
Samsung Electronics Co., Ltd.
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Ha-Jin Tae-Gyun Pan-Kwi Jun-Jung Dong-Suk
Lim Kim Park Kim Shin