Studebaker & Brackett PC
Manufacturing method and apparatus for manufacturing silicon carbide epitaxial wafer
A manufacturing method for manufacturing a silicon carbide epitaxial wafer includes: introducing a cleaning gas into a growth furnace to remove dendrite-like polycrystal of silicon carbide attached to an inner wall of the growth furnace; after introducing the cleaning gas, bringing a silicon carbide substrate in the growth furnace; and growing a silicon carbide epitaxial layer on the silicon carbide substrate by introducing a processing gas into the growth furnace to manufacture a silicon carbide epitaxial wafer, wherein the cleaning gas having fluid energy of 1.6E-4 [J] or higher is introduced into the growth furnace.
Mitsubishi Electric Corporation
C C B H C H C C C H
C11D C23C B08B H01L C23C H01L C30B C30B C23C H01L
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Takahiro Nobuyuki Takuma Masashi Yoichiro Yasuhiro Akihito
Yamamoto Tomita Mizobe Sakai Mitani Kimura Ohno