Slater Matsil, LLP
Gate-end structure engineering for semiconductor applications
Semiconductor device structures with reduced gate end width formed at gate structures and methods for manufacturing the same are provided. In one example, a semiconductor device structure includes a plurality of gate structures formed over a plurality of fin structures, the gate structures formed substantially orthogonal to the fin structures, wherein the plurality of gate structures includes a first gate structure having a first gate end width and a second gate structure having a second gate end width, wherein the second gate end width is shorter than the first gate end width.
Taiwan Semiconductor Manufacturing Company, Ltd.
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I-Shan Chan-Yu Ling-Sung Yu-Jen
Huang Hung Wang Chen