Myers Bigel Sibley & Sajovec, P.A.
Integrated circuit device with transistors having different threshold voltages
Integrated circuit device with transistors having different threshold voltages and methods of forming the device are provided. The device may include the first, second and third transistors having threshold voltages different from each other. The first transistor may be free of a stacking fault and the second transistor may include a stacking fault. The concentration of the channel implant region of the third transistor may be different from the concentration of the channel implant region of the first transistor.
Samsung Electronics Co., Ltd.
H H
H01L H01L
inventional inventional
Seung-Hyun In-Kook Seung-Chul
Song Jang Lee