Haynes and Boone, LLP
Material composition and methods thereof
Provided is a material composition and method that includes forming a patterned resist layer on a substrate, where the patterned resist layer has a first line width roughness. In various embodiments, the patterned resist layer is coated with a treatment material, where a first portion of the treatment material bonds to surfaces of the patterned resist layer. In some embodiments, a second portion of the treatment material (e.g., not bonded to surfaces of the patterned resist layer) is removed, thereby providing a treated patterned resist layer, where the treated patterned resist layer has a second line width roughness less than the first line width roughness.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
G H H G
G03F H01L H01L G03F
inventional inventional inventional inventional
Ching-Yu Cheng-Han Siao-Shan Chin-Hsiang
Chang Wu Wang Lin