Fish & Richardson P.C.
Semiconductor device, manufacturing method thereof, and electronic device
A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer. The second and third regions each include a region containing an element N (N is phosphorus, argon, or xenon).
Semiconductor Energy Laboratory Co., Ltd.
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Shinya Takashi Daigo Masaharu Yoshiaki Naoto Yutaka Daisuke Motomu
Sasagawa Hamada Ito Nagai Yamamoto Yamade Okazaki Matsubayashi Kurata