Tung & Associates
Method for coating a thick spin-on-glass layer on a semiconductor structure
A method for coating a thick spin-on-glass layer on a semiconductor structure without cracking problems and with improved planarization is disclosed. In the method, a pre-processed semiconductor structure that has a plurality of metal lines on top is first provided. After a first conformal layer of silicon oxide is deposited on top to insulate the metal lines, a first and a second layer of SOG are coated on top to a total thickness of at least 2500 &aring;. On top of the second SOG layers, is then deposited a second layer of silicon oxide by a plasma enhanced oxide deposition technique to a thickness of at least 1000 &aring;. A third and a fourth SOG layer are then coated on top of the stress buffer layer to a total thickness of at least 2500 &aring;.
Taiwan Semiconductor Manufacturing Co., Ltd
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Hsin-Chieh Wen-Yi
Huang Wang