Knobbe, Martens, Olson & Bear, LLP
Low dielectric constant material for integrated circuit fabrication
A method is provided for forming a material with a low dielectric constant, suitable for electrical isolation in integrated circuits. The material and method of manufacture has particular use as an interlevel dielectric between metal lines in integrated circuits. In a disclosed embodiment, methylsilane is reacted with hydrogen peroxide to deposit a silicon hydroxide layer incorporating carbon. The layer is then treated by exposure to a plasma containing oxygen, and annealing the layer at a temperature of higher than about 450&deg; C. or higher.
Micron Technology, Inc.
H H H H H H H C C
H01L H01L H01L H01L H01L H01L H01L C23C C23C
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Weimin
Li