Oliff & Berridge, PLC
Bottom resist layer composition and patterning process using the same
There is disclosed a bottom resist layer composition for a multilayer-resist film used in lithography comprising, at least, a polymer comprising a repeating unit represented by the following general formula (1). Thereby, there can be provided a bottom resist layer composition that exhibits optimum n value and k value on exposure to shorter wavelengths, excellent etching resistance under conditions for etching substrates, and is promising for forming a bottom resist layer used for a multilayer-resist process such as a silicon-containing bilayer resist process or a trilayer resist process using a silicon-containing intermediate resist layer.
Shin-Etsu Chemical Co., Ltd.
G
G03F
inventional
Jun Toshihiko Takanobu
Hatakeyama Fujii Takeda