Muncy, Geissler, Olds & Lowe, P.C.
Structure and formation method of memory device
Structures and formation methods of memory devices are provided. The memory device includes a first electrode, a second electrode, and a resistive layer positioned between the first electrode and the second electrode. The resistive layer has a crystalline portion. A volume ratio of the crystalline portion to the resistive layer is in a range from about 0.2 to about 1.
Winbond Electronics Corp.
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Hsiu-Han Shuo-Che Po-Yen Chia Hua
Liao Chang Hsu Ho