J.C. Patents
Method of performing ion implantation
A method of performing an ion implantation is provided. A workpiece is installed in the ion implanter. A wafer is provided in a receiving space within an ion implanter. An ion beam is generated by an ion source of the ion implanter. The bombard of the ion beam is blocked and particles generated during or after conducting the step of generating the ion beam are collected by the workpiece.
United Microelectronics Corp.
G
G21F
inventional
Cheng-Hung Jui-Fang Chih-Ming Chung-Jung Chien-Kuo
Chang Chen Yang Chen Ko