Magnetic tunnel junction device and fabrication
A method of forming a magnetic tunnel junction (MTJ) device includes forming a first MTJ cap layer on a MTJ structure. The first MTJ cap layer includes a first non-nitrified metal. The method also includes forming a second MTJ cap layer over the first MTJ cap layer. The second MTJ cap layer includes a second non-nitrified metal. The method further includes forming a top electrode layer over the second MTJ cap layer. The second MTJ cap layer is conductive and configured to reduce or prevent oxidation.
QUALCOMM Incorporated
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Xia Seung Hyuk
Li Kang