Parkhurst & Oliff
Solid state image sensor comprising photoelectric converting film and reading-out transistor
 A solid state image sensor including a substrate, an epitaxial layer grown on the substrate, an opaque bottom electrode applied on the epitaxial layer, a photoconductor film deposited on the bottom electrode, a transparent surface electrode applied on the photoconductor film, a reading-out SIT formed in the epitaxial layer and a resetting MOS-FET also formed in the epitaxial layer. A gate diffusion region of the reading-out SIT is connected to the bottom electrode and a source region of resetting MOS-FET is also connected to the bottom electrode. A source electrode connected to the source region of the reading-out SIT is extended under the bottom surface, while an insulating layer is interposed therebetween to form a capacitance. Charge carriers stored in the gate region of the reading-out SIT can be read-out to derive a large output voltage due to the amplifying function of the reading-out SIT. 
Olympus Optical Co., Ltd.
H H H
H01L H01L H04N
inventional inventional inventional
Jun-ichi Atsushi Takashi Hidetoshi
Nishizawa Yusa Mizusaki Yamada