Antonelli, Terry, Stout & Kraus, LLP
Gate circuit and semiconductor circuit to process low amplitude signals, memory, processor and information processing system manufactured by use of them
The object of the present invention to provide a semiconductor integrated circuit device wherein the input signal is made to have a low amplitude to shorten transition time of the input signal, said integrated circuit device operating at a low power consumption, without flowing of breakthrough current, despite entry of the input signal featuring low-amplitude operations, and said integrated circuit device comprising a gate circuit, memory and processor. When input signal is supplied through the NMOS pass transistor, said input signal is input to the gate of the first NMOS transistor, and at the same time, is input into the gate of the first PMOS transistor which performs complementary operation with said first NMOS transistor through the second NMOS transistor; said first PMOS gate is connected to the power supply potential through the second PMOS transistor, and the gate of the said second NMOS transistor is connected to the power supply potential; wherein the gate of the said second PMOS transistor gate is controlled by the signal which is connected with both the drain of the said first NMOS transistor and the drain of the said first PMOS transistor.
Hitachi Engineering Co., Ltd. Hitachi, Ltd.
H H
H03K H03K
inventional inventional
Yoji Tatsumi Kayoko Fumio Katsunori Hiromichi Hideo Kosaku
Nishio Yamauchi Nemoto Murabayashi Koike Yamada Hara Hirose