Maschoff Brennan
Semiconductor structure and fabricating method thereof
A semiconductor structure and a method of fabricating the semiconductor structure are disclosed herein. The semiconductor structure includes a substrate, a strain-inducing layer and an epitaxy structure. The strain-inducing layer is disposed on the substrate, and the epitaxy structure is embedded in the strain-inducing layer and not in contact with the substrate.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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inventional inventional additional inventional inventional inventional inventional inventional
Chih-Chiang Kun-Mu Hsueh-Chang
Chang Li Sung