WPAT, P.C., Intellectual Property Attorneys
Semiconductor structure and manufacturing method thereof
A semiconductor structure includes a substrate; a post passivation interconnect (PPI) disposed over the substrate and including a plurality of first elongated members extended over a surface of the substrate and a plurality of second elongated members extended over the surface of the substrate and isolated from the plurality of first elongated members; a first polymeric layer covering the PPI; and a second polymeric layer disposed over the first polymeric layer, wherein the plurality of first elongated members are alternately disposed with the plurality of second elongated members, the first polymeric layer includes a recessed portion disposed between one of the plurality of first elongated members and one of the plurality of second elongated members, and the second polymeric layer includes a protruded portion disposed within the recessed portion.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Hsien-Wei Jie
Chen Chen