Marshall, Gerstein & Borun LLP
Oxide pattern forming method and patterning method of semiconductor device
An oxide pattern forming method comprises forming an oxide layer on a semiconductor substrate, implanting boron ions of not less than 1.0×1016 atoms/cm2 onto the oxide layer in a given region, and wet-etching the oxide layer in the remaining region where the boron ions are not implanted.
Hynix Semiconductor Inc.
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Sang Hyun Hyo Geun Young Wok Dong Joo Yong Soo Geun Min Woo Jin Ji Yong
Lee Yoon Song Kim Jung Choi Kim Park