Hill, Steadman & Simpson
Polyvinyl alcohol-based photoresist
 A new photoresist composition suited for fine processing is provided which has practical applications in various dry etching processes. An advantageous pattern formation method using such a photo-resistive composition is also provided. The photoresist composition includes a substance containing a skeleton as at least a part of a main chain. The skeleton is obtained through polymerization of a vinyl alcohol type compound such as a polyvinyl alcohol chain, at least some hydroxyl groups in the skeleton being protected by acid-releasing protective groups. The skeleton preferably contains a group for improving the dry etching resistance. The photoresist composition also includes an optical acid generator. Development with a high polarity solvent, for instance aqueous development, is provided. A positive pattern is obtained by aqueous development, and a negative pattern is obtained by alcohol development. 
Sony Corporation
G Y G
G03F Y10S G03F
inventional additional additional
Yoichi Masao
Tomo Saito