Patterson & Sheridan, LLP
Semiconductor device and method for manufacturing the same
According to one embodiment, a semiconductor device includes a first semiconductor substrate having a first wiring electrode on a first surface thereof, a first protective layer on the semiconductor substrate, having an opening therethrough at the location of first wiring electrode, a first bump electrode in the opening of the first protective layer, the first bump electrode including a base overlying the wiring electrode and an opposed bump receiving surface, and a first bump comprising a bump diameter of 30 μm or less connected to the first bump electrode. The width of the base of the first bump electrode within the opening is equal to or less than 1.5 times the thickness of the first protective layer.
Toshiba Memory Corporation
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Tatsuo Taku Shinya
Migita Kamoto Watanabe