Birch, Stewart, Kolasch & Birch, LLP
Structures and formation methods of finFET device
A semiconductor device includes a semiconductor substrate and an isolation structure over the semiconductor substrate. The semiconductor device also includes a first epitaxial fin and a second epitaxial fin over the semiconductor substrate, and the first epitaxial fin and the second epitaxial fin protrude from the isolation structure. The semiconductor device further includes a gate stack over and traversing the first epitaxial fin and the second epitaxial fin. In addition, the semiconductor device includes a recess extending from a top surface of the isolation structure. The recess is between the first epitaxial fin and the second epitaxial fin.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H H H H H H H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional inventional inventional inventional additional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Ying-Hua Tsung-Yu Kuang-Hsin Chia-Ming
Lai Chiang Chen Chang