Ladas & Parry LLP
Method for forming a gate in a semiconductor, which prevents gate leaning caused by thermal processing
A method for forming a gate in a semiconductor device includes the steps of: providing a substrate having active and field regions; selectively etching a portion of the active region to form a trench; forming on the substrate including the trench an amorphous conductive film for forming a gate; subjecting the resulting structure to an annealing process so as to convert the amorphous conductive film into a crystalline conductive film; and selectively etching the crystalline conductive film so as to form a gate covering the corner portion of the trench.
Hynix Semiconductor Inc.
H H
H01L H01L
inventional inventional
Yun Seok Hyung Bok
Chun Choi