Magnetic tunnel junction device and fabrication
A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material on a free layer of a magnetic tunneling junction structure to form the capping layer and oxidizing a portion of the capping material to form a layer of oxidized material.
QUALCOMM Incorporated
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Xia Kangho Xiaochun Seung H.
Li Lee Zhu Kang