Lowe Hauptman & Ham, LLP
Protection structure for metal-oxide-metal capacitor
A capacitor structure includes first and second sets of electrodes and a plurality of line plugs. The first set of electrodes has a first electrode and a second electrode formed in a first metallization layer among a plurality of metallization layers, wherein the first electrode and the second electrode are separated by an insulation material. The second set of electrodes has a third electrode and a fourth electrode formed in a second metallization layer among the plurality of metallization layers, wherein the third electrode and the fourth electrode are separated by the insulation material. The line plugs connect the second set of electrodes to the first set of electrodes.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H Y H
H01L H01G H01L Y10T H01L
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Chun-Hung Hua-Chou Wei-Chun Chih-Ping Jye-Yen Chung-Long
Chen Tseng Hua Chao Cheng Chang