WPAT, P.C., Intellectual Property Attorneys
Metal gate and manufuacturing process thereof
Some embodiments of the present disclosure provide a semiconductor device including a semiconductive substrate, a metal gate including a metallic layer proximal to the semiconductive substrate. A dielectric layer surrounds the metal gate. The dielectric layer includes a first surface facing the semiconductive substrate and a second surface opposite to the first surface. A sidewall spacer surrounds the metallic layer with a greater longitudinal height. The sidewall spacer is disposed between the metallic layer and the dielectric layer. An etch stop layer over the metal gate comprises a surface substantially coplanar with the second surface of the dielectric layer. The etch stop layer has a higher resistance to etchant than the dielectric layer. A portion of the etch stop layer is over the sidewall spacer.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Tsung-Yu Chang-Yin Wei-Shuo Chai-Wei
Chiang Chen Ho Chang