Hauptman Ham, LLP
Substrate bias control circuit
An integrated circuit includes a process voltage temperature (PVT) effect transducer responsive to a PVT effect, a PVT effect quantifier coupled to the PVT effect transducer and configured to quantify the PVT effect to provide an output, and a bias controller configured to receive the output of the PVT effect quantifier and provide a bias voltage for a substrate of an NMOS or a PMOS transistor. The bias controller is configured to compare the output received from the PVT effect quantifier to a threshold value, and decrease or increase the bias voltage depending on whether the output is higher or lower than the threshold value.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
G H
G05F H03K
inventional inventional
Yun-Han Shiue Tsong Jyy Anne Shyh-An
Lee Shen Lee Chi