Magnetic tunnel junction device and fabrication
A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material on a free layer of a magnetic tunneling junction structure to form the capping layer and oxidizing a portion of the capping material to form a layer of oxidized material.
QUALCOMM Incorporated
B H H B H H H G H H H
B82Y H01L H01L B82Y H01L H01F H01L G06F H01F H01F H01F
inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Xia Kangho Seung H. Xiaochun
Li Lee Kang Zhu