Hauptman Ham, LLP
Method of generating modified layout for RC extraction
A method of includes determining a first set of width bias values of an i-th set of layout patterns of an original layout according a first type width variation. The original layout has N sets of layout patterns corresponding to N masks, where the i-th set of layout patterns has an i-th mask assignment corresponding to an i-th mask of the N masks. The order index i is an integer from 1 to N, and N is an integer and greater than 1. A second set of width bias values of the i-th set of layout patterns of the original layout is determined according to a second type width variation. The modified layout is generated based on the first and second sets of width bias values of the i-th set of layout patterns.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Ke-Ying Chia-Ming Hsien-Hsin Sean
Su Ho Lee