Hauptman Ham, LLP
Fin field effect transistor (FinFET) device having position-dependent heat generation and method of making the same
A semiconductor apparatus including a substrate having a substrate major surface, a dielectric material on the substrate major surface and having a second major surface distanced from the substrate major surface, and a plurality of fins extending from the substrate major surface through the dielectric material where the plurality of fins includes a first subset of fins and a second subset of fins, the first subset of fins located closer to a center of the plurality of fins than the second subset of fins, and an amount of heat generated during operation of the semiconductor device by each fin of the first subset of fins is less than an amount of heat generated by each fin of the second subset of fins during operation of the semiconductor device.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Chun-Wei Sheng-Feng Jhong-Sheng Jiaw-Ren
Chang Liu Wang Shih