Seed IP Law Group LLP
Transistor with a negative capacitance and a method of creating the same
The various described embodiments provide a transistor with a negative capacitance, and a method of creating the same. The transistor includes a gate structure having a ferroelectric layer. The ferroelectric layer is formed by forming a thick ferroelectric film, annealing the ferroelectric film to have a desired phase, and thinning the ferroelectric film to a desired thickness of the ferroelectric layer. This process ensures that the ferroelectric layer will have ferroelectric properties regardless of its thickness.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Ming-Shiang Chia-Cheng Jin Tung Ying Tzu-Chung Feng
Lin Ho Cai Lee Wang Yuan