McClure, Qualey & Rodack, LLP
Semiconductor device structure and method for forming the same
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base and a fin over the base. The semiconductor device structure includes a gate stack wrapping around a first upper portion of the fin. The semiconductor device structure includes a first stressor and a second stressor respectively over opposite first sides of the fin. The semiconductor device structure includes a spacer structure between the gate stack and the first stressor. The semiconductor device structure includes a first spacer layer covering a sidewall of the gate stack, the spacer structure, and the first stressor. The semiconductor device structure includes a dielectric layer over the first spacer layer. The semiconductor device structure includes an etch stop layer between the first spacer layer and the dielectric layer. The semiconductor device structure includes a seal structure between the second upper portion and the third upper portion.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chia-Hao Sheng-Tsung Chih-Hao Lin-Yu Chia-Lin Cheng-Chi Yu-Ming
Chang Wang Wang Huang Chuang Chuang Lin