Maschoff Brennan
CMOS image sensor structure with IR/NIR integration
A semiconductor device includes a substrate, light sensing devices, at least one infrared radiation sensing device, a transparent insulating layer, an infrared radiation cut layer, a color filter layer and an infrared radiation color filter layer. The light sensing devices and the at least one infrared radiation sensing device are disposed in the substrate and are adjacent to each other. The transparent insulating layer is disposed on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device. The infrared radiation cut layer is disposed on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation. The color filter layer is disposed on the infrared radiation cut layer. The infrared radiation color filter layer is disposed on the transparent insulating layer overlying the at least one infrared radiation sensing device.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Yung-Lung Chun-Hao Kuo-Cheng Tsung-Han Ching-Chun Tzu-Hsuan Kun-Huei
Hsu Chou Lee Tsai Wang Hsu Lin