Cesari and McKenna, LLP
Spin orbit torque-based spintronic devices using L10-ordered alloys
In one embodiment, a SOT device provides current-induced perpendicular magnetization switching in a single magnetic layer, such as a L10-ordered magnetic alloy layer of FePt alloy, CoPt alloy, FePd alloy or another atomically layered magnetic alloy. The SOT may originate from the large spin orbit coupling in these alloys. Depending on the implementation, the SOT device may take the form of a SOT-MRAM, a spin memristor, a current-assisted magnetic recording media, or other type of device.
National University of Singapore
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Liang Jinyu Jingsheng
Liu Deng Chen