Li & Cai Intellectual Property (USA) Office
Trench power MOSFET and fabrication method thereof
An exemplary embodiment of the present disclosure illustrates a trench power MOSFET which includes a base, a plurality of first trenches, and a plurality of second trenches. The base has an active region and a termination region, wherein the termination region surrounds the active region. The plurality of first trenches is disposed in the active region. The plurality of second trenches is disposed in the termination region, wherein the second trenches extend outward from the active region side. The second trenches have isolation layers and conductive material deposited inside, in which the isolation layers are respectively disposed in the inner surface of the second trenches. The disclosed trench power MOSFET having the second trenches disposed in the termination region can increase the breakdown voltage thereof while minimize the termination region area thereby reduce the associated manufacturing cost.
Great Power Semiconductor Corp.
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Chun-Ying Yuan-Ming
Yeh Lee