Haynes and Boone, LLP
Self-assembly pattern for semiconductor integrated circuit
A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A nano-sized feature is self-assembled using a portion of the polymer layer. The substrate is patterned using the nano-sized feature.
Taiwan Semiconductor Manufacturing Company, Ltd.
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H01L H01L H01L
inventional inventional inventional
Ching-Yu Tsung-Lin Clement Hsingjen
Chang Lee Wann