Birch, Stewart, Kolasch & Birch, LLP
Method of manufacturing low resistivity p-type compound semiconductor material
The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of forming a p-type impurity doped compound semiconductor layer on the substrate by either HVPE, OMVPE or MBE and applying a microwave treatment over the p-type impurity doped compound semiconductor layer for a period of time. The high resistivity p-type impurity doped compound semiconductor layer is converted into a low resistivity p-type compound semiconductor material according to the present invention.
United Epitaxy Company, Ltd.
H H
H01L H01L
inventional inventional
Chung-Ying Tzong-Liang
Chang Tsai