Slater Matsil, LLP
Fin field effect transistor (FinFET) device structure and method for forming the same
A FinFET device structure and method for forming the same are provided. The fin field effect transistor (FinFET) device structure includes a fin structure formed over a substrate and a gate structure traversing over the fin structure. The gate structure includes a gate electrode layer which includes an upper portion above the fin structure and a lower portion below the fin structure. The upper portion has a top surface with a first width, the lower portion has a bottom surface with a second width, and the first width is greater than the second width.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional
Bo-Feng Chang-Yin Chia-Yang Chai-Wei
Young Chen Liao Chang