Ladas & Parry LLP
Phase change memory device having semiconductor laser unit
Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell.
Electronics and Telecommunications Research Institute
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Sung Min Seung Yun Kyu Jeong Young Sam Sangouk Byoung Gon Nam Yeal
Yoon Lee Choi Park Ryu Yu Lee