Volentine, Whitt & Francos, PLLC
Semiconductor device including trench isolation layer and method of forming the same
A semiconductor device includes a plurality of patterns defined between a plurality of trenches and disposed on a substrate. A leaning control layer is disposed on sidewalls and bottoms of the plurality of trenches. A gap-fill insulating layer is disposed on the leaning control layer. At least one of the plurality of trenches has a different depth from one of the plurality of trenches adjacent thereto.
Samsung Electronics Co., Ltd.
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Sukjin Bongjin Hakyu Hanmei Changyong Juyeon
Chung Kuh Seong Choi Kim Kim