Harness, Dickey & Pierce, P.L.C.
Method of forming nitride semiconductor substrate and method of fabricating semiconductor device
A method of fabricating a nitride semiconductor substrate including forming a buffer layer on a surface of a growth substrate, growing a first nitride semiconductor layer on the buffer layer, growing a second nitride semiconductor layer on the first nitride semiconductor layer, and removing the growth substrate may be provided. The forming a buffer layer may deform the surface of the growth substrate to have a convex shape. The forming a buffer layer and the growing a first nitride semiconductor layer may be performed within a first process chamber. The growing a second nitride semiconductor layer and the removing the growth substrate may be performed within a second process chamber.
Samsung Electronics Co., Ltd.
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Sammook Junyoun Youngjo Mihyun
Kang Kim Tak Kim