Jones & Volentine, L.L.P.
Bonding pad in semiconductor device
 A bonding pad in a semiconductor device having at least one slit is provided. In the semiconductor device including a passivation layer covering the bonding pad and metal wiring, at least one slit is formed on the bonding pad for electrically connecting the metal wiring to external leads of the semiconductor device. The slit formed in the bonding pad may be filled with a molding compound to buffer the stresses caused by a wire-bonding process. Hence, stress-induced corrosion may be reduced and PCT reliability may be enhanced. 
Samsung Electronics Co., Ltd.
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Hong-beom Seong-min
Kim Lee