J.C. Patents
Semiconductor process
A semiconductor process is described. A semiconductor substrate having a memory area, a first device area and a second device area is provided. A patterned charge-trapping layer is formed on the substrate, covering the memory area and the second device area but exposing the first device area. A first gate oxide layer is formed in the first device area. The charge-trapping layer in the second device area is removed. A second gate oxide layer is formed in the second device area.
United Microelectronics Corp.
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Wei-Chang Wei Yi-Shan Yuan-Hsiang Zhen
Liu Ta Chiu Chang Chen