Morgan, Lewis & Bockius LLP
Schottky barrier diode and method of manufacturing the same
A Schottky barrier diode includes: an n− type layer disposed on a first surface of an n+ type silicon carbide substrate; a p+ type region and a p type region disposed on the n− type layer and separated from each other; an anode disposed on the n− type layer, the p+ type region, and the p type region; and a cathode disposed on a second surface of the n+ type silicon carbide substrate. The p type region is in plural, has a hexagonal shape on the plane, and is arranged in a matrix shape, and the n− type layer disposed between the p+ type region and the p type region has a hexagonal shape on the plane and encloses the p type region.
HYUNDAI MOTOR COMPANY, LTD.
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Youngkyun Jong Seok Junghee Nack Yong Dae Hwan
Jung Lee Park Joo Chun