N-type thin film transistor
An N-type semiconductor layer includes an insulating substrate, an MgO layer, a semiconductor carbon nanotube layer, a functional dielectric layer, a source electrode, a drain electrode, and a gate electrode. The semiconductor carbon nanotube layer is sandwiched between the MgO layer and the functional dielectric layer. The source electrode and the drain electrode electrically connect the semiconductor carbon nanotube layer. The gate electrode is on the functional dielectric layer and insulated from the semiconductor carbon nanotube layer.
Tsinghua University HON HAI PRECISION INDUSTRY CO., LTD.
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Guan-Hong Shou-Shan Qun-Qing Yuan-Hao
Li Fan Li Jin