Young & Thompson
Electron beam cell projection lithography method for correcting coulomb interaction effects
 Disclosed herein is a method of electron beam cell projection lithography, employing an electron beam which is shaped by a first aperture having a first opening and a second aperture having a plurality of second openings. The shaped electron beam is irradiated on a sample surface to expose plurality of patterns on the sample surface, wherein an exposure dose is determined according to an exposure intensity distribution function, thereby correcting a proximity effect, while the exposure dose is also controlled to correct for a beam blur induced by a Coulomb interaction effect. The exposure intensity distribution function includes a term for correcting the Coulomb interaction effect. 
NEC Corporation
H B B H
H01J B82Y B82Y H01J
inventional inventional inventional additional
Hiroshi Hiroshi Takao
Nozue Yamashita Tamura