Toler Law Group
Resistive random access memory device with resistance-based storage element and method of fabricating same
A method of fabrication of a device includes forming a first electrode and a second electrode. The method further includes forming a resistive material between the first electrode and the second electrode to form a resistance-based storage element of a resistive random access memory (RRAM) device.
QUALCOMM Incorporated
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Yu Xia Seung Hyuk
Lu Li Kang