Marshall, Gerstein & Borun LLP
Erase and program method of flash memory device for increasing program speed of flash memory device
Erase and program methods of a flash memory device including MLCs for increasing the program speed are described. In the erase method, MLCs are pre-programmed so that a voltage range in which threshold voltages of MLCs are distributed can be reduced. Therefore, a fail occurrence ratio can be reduced when erasing MLCs, the threshold voltage distribution of MLCs can be improved and an overall program time can be shortened in a subsequent program operation.
Hynix Semiconductor Inc.
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Keum Hwan Kyung Pil Hyung Seok Sook Kyung Seok Jin Min Kyu Ju In
Noh Hwang Kim Kim Joo Lee Kim