Magnetoresistive random access memory (MRAM) with integrated magnetic film enhanced circuit elements
A Magnetoresistive Random Access Memory (MRAM) integrated circuit includes a substrate, a magnetic tunnel junction region, a magnetic circuit element, and an integrated magnetic material. The magnetic tunnel junction region is disposed on the substrate, and includes a first magnetic layer and a second magnetic layer separated by a tunnel barrier insulating layer. The magnetic circuit element region is disposed on the substrate, and includes a plurality of interconnected metal portions. The integrated magnetic material is disposed on the substrate adjacent to the plurality of interconnected metal portions.
QUALCOMM Incorporated
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Kangho Xia Xiaochun Seung H.
Lee Li Zhu Kang