Fish & Richardson P.C.
Semiconductor device and manufacturing method of the same
To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.
Semiconductor Energy Laboratory Co., Ltd.
H H H H H H H H H C H H H C H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L C23C H01L H01L H01L C23C H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Asako Yoshinori Hidekazu Miki Yasutaka Naoto Kosei Yoshinori Shunpei
Higa Ieda Miyairi Suzuki Suzuki Yamade Nei Ando Yamazaki