Oblon, McClelland, Maier & Neustadt, L.L.P.
Nonvolatile semiconductor memory device and method for manufacturing same
According to one embodiment, a nonvolatile semiconductor memory device includes: a first stacked body having a gate insulating film, a first charge storage layer, a first insulating film, a second charge storage layer, and a second insulating film, a second element isolation region, a bottom and at least part of a side portion of the second element isolation region being in contact with the semiconductor substrate in the peripheral portion; and a second stacked body, a third insulating film, a first layer, a fourth insulating film, a second layer, and the second insulating film are stacked in this order from the semiconductor substrate side between the semiconductor substrate and the control gate electrode in the second stacked body in the peripheral portion, a side portion of the second stacked body being covered with the second insulating film.
Kabushiki Kaisha Toshiba
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Kenji Hiroki Masanari Tatsuya
Aoyama Yamashita Hattori Okamoto