Schwabe Williamson & Wyatt P.C.
Transistor structure with variable clad/core dimension for stress and bandgap
An apparatus including a heterostructure disposed on a substrate and defining a channel region, the heterostructure including a first material having a first band gap less than a band gap of a material of the substrate and a second material having a second band gap that is greater than the first band gap; and a gate stack on the channel region, wherein the second material is disposed between the first material and the gate stack. A method including forming a first material having a first band gap on a substrate; forming a second material having a second band gap greater than the first band gap on the first material; and forming a gate stack on the second material.
Intel Corporation
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Gilbert Benjamin Willy Ravi Niloy Robert S. Jack T. Van H. Roza Marko
Dewey Chu-Kung Rachmady Pillarisetty Mukherjee Chau Kavalieros Le Kotlyar Radosavljevic