Muncy, Geissler, Olds & Lowe, P.C.
Methods of forming through silicon via openings
A method includes forming an opening in a substrate, and the opening completely extends through the substrate. A recast material is formed on sidewalls of the substrate exposed by the opening. A first chemical is applied in the opening to remove the recast material, wherein a residue of the first chemical remains on portions of the sidewalls after the applying of the first chemical. Moreover, A second chemical is applied in the opening to remove the residue of the first chemical, and the second chemical is different from the first chemical.
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Chyi Shyuan Hsing-Kuo Hung-Yi Chun-Lin Hsin-Hsien
Chern Hsia Kuo Chang Wu