Wpat, P.C., Intellectual Property Attorneys
Interconnect structure and manufacturing method for the same
The present disclosure provides an interconnect structure, including a first interlayer dielectric layer, a bottom metal line including a first metal in the first interlayer dielectric layer, a conductive via including a second metal over the bottom metal line, wherein the second metal is different from the first metal, and the first metal has a first type of primary crystalline structure, and the second metal has the first type of primary crystalline structure, a total area of a bottom surface of the conductive via is greater than a total cross sectional area of the conductive via, and a top metal line over the conductive via, wherein the top metal line comprises a third metal different from the second metal.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Shuen-Shin Chi-Hung Hung-Yi Chun-I Keng-Chu Ken-Yu Chun-Hsien Sung-Li Chia-Hung Chien Kai-Yi Hsu-Kai Chih-Wei
Liang Chuang Huang Tsai Lin Chang Huang Wang Chu Chang Chu Chang Chang