Process for oxide fabrication using oxidation steps below and above a threshold temperature
A process for forming an oxide layer includes forming a first oxide portion over a substrate at a temperature below a threshold temperature. A second oxide portion is formed under the first oxide portion at a temperature above the threshold temperature. The substrate is illustratively oxidizable silicon and the threshold temperature is the viscoelastic temperature of silicon dioxide.
Agere Systems Inc.
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Sundar Srinivasan Pradip Kumar Yuanning
Chetlur Roy Chen