Lee & Hayes, P.C.
Nanosheet transistor
Inner and outer spacers for nanosheet transistors are formed using techniques that improve junction uniformity. One nanosheet transistor device includes outer spacers and an interlevel dielectric layer liner made from the same material. A second nanosheet transistor device includes outer spacers, inner spacers and an interlevel dielectric layer liner that are all made from the same material.
Tessera, Inc.
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Heng Juntao Peng Kangguo
Wu Li Xu Cheng