Method for patterning a semiconductor structure
A method for patterning a semiconductor structure is provided, including forming an additional third material layer on a thinner portion of a second material layer to be an etching buffer layer. The removed thickness of the thinner portion of the second material layer covered by the third material layer during an etching back process is therefore reduced.
UNITED MICROELECTRONICS CORP. Fujian Jinhua Integrated Circuit Co., Ltd.
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Yu-Chieh Chien-Ting Ming-Te Ying-Chiao Li-Wei
Lin Ho Wei Wang Feng