Slater Matsil, LLP
Method of forming a semiconductor device with bump stop structure
A method for manufacturing semiconductor devices is provided. A protection layer is conformally deposited over a passivation layer such that the protection layer has a protrusion pattern that protrudes from a top surface of the protection layer. Further, a post-passivation interconnect structure (PPI) is conformally formed on the protection layer such that the PPI structure includes a landing pad region, a protrusion pattern conformal to the protrusion pattern of the protection layer, and a connection line electrically connected to the conductive pad. A solder bump is then placed on the landing pad region in contact with the protrusion pattern of PPI structure. A semiconductor device with bump stop structure is also provided. The protrusion pattern of the PPI structure serves as a bump stop that constrains a ball shift in the placement of the solder bump over the landing pad.
Taiwan Semiconductor Manufacturing Co., Ltd
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additional additional additional inventional additional additional additional additional additional additional additional additional inventional additional additional additional additional additional additional additional additional additional inventional additional additional inventional additional inventional additional additional additional additional additional additional additional additional additional additional additional additional additional additional additional additional additional additional inventional additional additional inventional additional additional additional additional
Hsien-Wei Jie
Chen Chen