Fitzpatrick, Cella, Harper & Scinto
Method for manufacturing photovoltaic element
Disclosed is a method for manufacturing a photovoltaic element wherein a pin-structure formed by laminating n-, i- and p-type semiconductor layers, each of which contains silicon atoms and has a non-monocrystalline crystal structure is formed at least one or more times on a substrate, the method comprising steps of forming each of the semiconductor layers and annealing the surface of at least one of the semiconductor layers or the substrate in an atmosphere of hydrogen gas, helium gas or argon gas that contains 1 to 1000 ppm of oxygen atom containing gas.
Canon Kabushiki Kaisha
H Y Y H H H
H01L Y02E Y02P H01L H01L H01L
inventional additional additional inventional inventional inventional
Masafumi Keishi
Sano Saito