FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures
A method for forming an NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer and the sensor element so formed. The method of producing these sensor elements provides elements having higher GMR ratios and lower resistances than elements of the prior art.
Headway Technologies, Inc.
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H01F C22C B82Y C22C B32B G11B G11B H01L B82Y Y10T Y10T G01R H01F Y10T H01F B82Y H01L
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Min Kiyoshi Kochan Masashi Cheng T. Simon H.
Li Noguchi Ju Sano Horng Liao