Haynes Beffel & Wolfeld LLP
Resistor random access memory cell with L-shaped electrode
A phase change random access memory PCRAM device is described suitable for use in large-scale integrated circuits. An exemplary memory device has a pipe-shaped first electrode formed from a first electrode layer on a sidewall of a sidewall support structure. A sidewall spacer insulating member is formed from a first oxide layer and a second, “L-shaped,” electrode is formed on the insulating member. An electrical contact is connected to the horizontal portion of the second electrode. A bridge of memory material extends from a top surface of the first electrode to a top surface of the second electrode across a top surface of the sidewall spacer insulating member.
Macronix International Co., Ltd.
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Erh Kun Chia Hua Kuang Yeu
Lai Ho Hsieh