Lee & Sterba, P.C.
Method for manufacturing a semiconductor device having a capping layer covering a capacitor of the semiconductor device
A method for manufacturing a capping layer covering a capacitor of a semiconductor memory device, preferably a metal-insulator-metal (MIM) capacitor, wherein the method includes forming a capacitor having a lower electrode, a dielectric layer and an upper electrode on a semiconductor substrate, forming a capping layer on the capacitor, and crystallizing the dielectric layer. Here, forming the capping layer includes stabilizing for deposition of the capping layer without providing oxygen gas, depositing the capping layer by providing a reaction source for the capping layer; and purging an inside of a reactor for forming the capping layer.
Samsung Electronics Co., Ltd.
H H H H H H H
H01L H01L H01L H01L H01L H01L H01L
additional additional additional additional additional additional inventional
Ki-chul Yun-jung Wan-don Jeong-hee Han-mei Sung-tae Young-sun
Kim Lee Kim Chung Choi Kim Kim