Integrated circuit device
An integrated circuit device includes a substrate and an integrated circuit area on the substrate. The integrated circuit area includes a dielectric stack. A cap layer is disposed on the dielectric stack. A seal ring is disposed in the dielectric stack and around a periphery of the integrated circuit area. A trench is formed around the seal ring to expose a sidewall of the dielectric stack. A MIM capacitor including a CTM layer and a CBM layer is disposed on the dielectric stack. A moisture blocking layer continuously covers the integrated circuit area and the MIM capacitor. The cap layer is interposed between the CTM layer and the CBM layer of the MIM capacitor and functions as a capacitor dielectric layer of the MIM capacitor. The moisture blocking layer extends to the sidewall of the dielectric stack, thereby sealing a boundary between two adjacent dielectric films in the dielectric stack.
UNITED MICROELECTRONICS CORP.
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Kuo-Yuh Purakh Raj Chia-Huei Chu-Chun
Yang Verma Lin Chang