Oliff & Berridge, PLC
Static RAM semiconductor memory device having reduced memory
The invention provides SRAMs that can reduce memory cells in size and correct light proximity effect. Gate electrode layers in a first layer, drain&#8212;drain connection layers in a second layer, and drain-gate connection layers in a third layer define conduction layers of a flip-flop. Driver transistors of one memory cell do not commonly share the n+ type source region with driver transistors of another memory cell.
Seiko Epson Corporation
H
H01L
inventional
Masahiro Takashi Takafumi Satoru
Takeuchi Kumagai Noda Kodaira