MH2 Technology Law Group, LLP
Gate-all-around metal-oxide-semiconductor transistors with gate oxides
A method and structure for a semiconductor transistor, including various embodiments. In embodiments, a transistor channel can be formed between a semiconductor source and a semiconductor drain, wherein a transistor gate oxide completely surrounds the transistor channel and a transistor gate metal that completely surrounds the transistor gate oxide. Related fabrication processes are presented for similar device embodiments based on a Group III-V semiconductor material and silicon-on-insulator materials.
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Daniel Steven Seung-Chang
Feezell Brueck Lee