WPAT, PC
Resistive random access memory structure and method for manufacturing the same
A resistive random access memory structure includes a bottom electrode; a variable resistance layer disposed on the bottom electrode; a top electrode disposed on the variable resistance layer; a protection layer surrounding the variable resistance layer, wherein a top surface of the protection layer and a top surface of the top electrode are coplanar; and an upper interconnect structure disposed on the top electrode, wherein the upper interconnect structure is electrically connected to the top electrode and directly contacts a sidewall of the protection layer.
UNITED MICROELECTRONICS CORP.
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Wen-Jen Chun-Hung Chuan-Fu
Wang Cheng Wang