Slater Matsil, LLP
FinFETs with different fin heights
An integrated circuit structure includes a semiconductor substrate including a first portion in a first device region, and a second portion in a second device region. A first semiconductor fin is over the semiconductor substrate and has a first fin height. A second semiconductor fin is over the semiconductor substrate and has a second fin height. The first fin height is greater than the second fin height.
Taiwan Semiconductor Munufacturing Company, Ltd.
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Feng Chang-Yun Chih Chieh Tsung-Lin
Yuan Chang Yeh Lee