Myers Bigel, P.A.
Diffused junction termination structures for silicon carbide devices
An electronic device includes a silicon carbide layer having a first conductivity type and a main junction adjacent a surface of the silicon carbide layer, and a junction termination region at the surface of the silicon carbide layer adjacent the main junction. Charge in the junction termination region decreases with lateral distance from the main junction, and a maximum charge in the junction termination region may be less than about 2×1014 cm−2.
Cree, Inc. The University of South Carolina
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Qingchun Alexander Tangali S. Anant K.
Zhang Bolotnikov Sudarshan Agarwal