Powell Goldstein Frazer & Murphy LLP
Method for forming thin film transistor with lateral crystallization
A method for forming thin film transistor with lateral crystallization. The method at least includes the following steps. First of all, an insulation substrate is provided. Then, an amorphous silicon layer is provided on the insulation substrate. The seeds are formed by annealing a portion of the amorphous silicon layer by excimer laser system, and the lateral-growth grain is formed by using the seeds to grow laterally by annealing the amorphous silicon layer, wherein the amorphous silicon layer defines an active region. Then, sequentially a dielectric layer and a polysilicon layer is deposited on the active region, wherein the dielectric layer and the polysilicon layer are gate electrodes, a gate is defined on the substrate, and the polysilicon layer is formed by etching. Next, source and drain regions are formed by implanting numerous ions into amorphous silicon layer by using the gate electrode as a mask.
United Microelectronics Corp.
H H
H01L H01L
inventional inventional
Du-Zen Ting-Chang Chun-Yen
Peng Chang Chang