Qualcomm Incorporated
Low collector contact resistance heterojunction bipolar transistors
In certain aspects, a heterojunction bipolar transistor (HBT) comprises a collector mesa, a base mesa on the collector mesa, and an emitter mesa on the base mesa. The base mesa has a tapered sidewall tapering from a wide bottom to a narrow top. The HBT further comprises a collector contact on a portion of the collector mesa and extending to a portion of the tapered sidewall of the base mesa.
QUALCOMM Incorporated
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Xia Gengming Bin
Li Tao Yang