Harness, Dickey & Pierce, P.L.C.
High electron mobility transistor and method of manufacturing the same
A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.
Samsung Electronics Co., Ltd.
H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional additional additional inventional inventional additional additional additional inventional additional inventional
In-jun Jong-seob Woo-chul Jai-kwang Jong-bong Jae-joon Hyuk-soon Sun-kyu Kyoung-yeon Joon-yong Ki-yeol Young-hwan
Hwang Kim Jeon Shin Ha Oh Choi Hwang Kim Kim Park Park