Burr & Brown
Bonding structure and semiconductor device manufacturing apparatus
The present invention relates to a bonding structure, including: a ceramic member including a hole; a terminal embedded in the ceramic member, an exposed surface exposed to a bottom portion of the hole, and made of a refractory metal having a thermal expansion coefficient substantially equal to a thermal expansion coefficient of the ceramic member; a brazed bond layer including a first tantalum layer in contact with the exposed surface of the terminal, a gold layer formed on the first tantalum layer, and a second tantalum layer formed on the gold layer; and a connecting member inserted in the hole, bonded to the terminal via the brazed bond layer, and made of a refractory metal having a thermal expansion coefficient substantially equal to the thermal expansion coefficient of the ceramic member.
NGK Insulators, Ltd.
C H Y H
C23C H01L Y10T H01L
inventional inventional additional inventional
Taichi Hiroshi Tomoyuki
Nakamura Takebayashi Fujii