Heslin Rothenberg Farley & Mesiti P.C.
Devices comprising high-K dielectric layer and methods of forming same
Provided is a semiconductor device that includes a semiconductor substrate and a 10 to 40 Å thick high-k dielectric layer that contains one or both of hafnium dioxide (HfO2) and zirconium dioxide (ZrO2). The high-k dielectric layer is disposed on the semiconductor substrate, and it contains at least some tetragonal phase HfO2 and/or tetragonal phase ZrO2. Also provided are methods for making the semiconductor device, and electronic devices that employ the semiconductor device.
GLOBALFOUNDRIES INC.
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Yiqun Fabio Shishir Jin Ping Sandeep
Liu D'Addamio Ray Liu Gaan