Heterojunction bipolar transistors and method of fabricating the same
A semiconductor device comprises a heterojunction bipolar transistor (HBT). The HBT comprises an emitter, a collector, and a base between the emitter and the collector. A width of the emitter may be smaller than 100 nanometers, which is suitable for high speed applications.
QUALCOMM Incorporated
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Bin Xia Gengming
Yang Li Tao