Marshall, Gerstein & Borun LLP
Method of fabricating a non-volatile memory device
A non-volatile memory device and a method of manufacturing the same, in which the program speed can be enhanced and the interference phenomenon can be reduced. The non-volatile memory device includes a semiconductor substrate having an active region defined by isolation layers arranged in one direction, a control gate arranged vertically to the direction in which the isolation layers are arranged, a floating gate formed on the active region below the control gate and having a lateral curve so that the floating gate has a width narrowed upwardly, a gate insulating layer formed between the floating gate and the semiconductor substrate, and a dielectric layer formed between the floating gate and the control gate.
Hynix Semiconductor Inc.
H
H01L
inventional
Jum Soo Jung Ryul
Kim Ahn