Cantor Colburn LLP
Self-limiting fin spike removal
Provided is a method for forming a semiconductor structure. In embodiments of the invention, the method includes laterally forming a spacer on a side of the semiconductor structure. The method further includes performing a thermal anneal on the semiconductor structure. The method further includes performing an etch to remove materials formed by the thermal anneal.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Peng Juntao Choonghyun Kangguo
Xu Li Lee Cheng