Heslin, Rothenberg, Farley & Mesiti P.C.
Integration method for fabrication of metal gate based multiple threshold voltage devices and circuits
In one aspect there is set forth herein a semiconductor device having a first field effect transistor formed in a substrate structure, and a second field effect transistor formed in the substrate structure. The first field effect transistor can include a first substrate structure doping, a first gate stack, and a first threshold voltage. The second field effect transistor can include the first substrate structure doping, a second gate stack different from the first gate stack, and a second threshold voltage different from the first threshold voltage.
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Manoj Jin Ping Bongki Srikanth Balaji Richard J. Manfred Rohit
Joshi Liu Lee Samavedam Carter Eller Pal