Mntz Levin Cohn Ferris Glovsky and Popeo, P.C.
Schottky barrier diode and method of manufacturing the same
A Schottky barrier diode includes: an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a first p+ region disposed on the n− type epitaxial layer; an n type epitaxial layer disposed on the n− type epitaxial layer and the first p+ region; a second p+ region disposed on the n type epitaxial layer, and being in contact with the first p+ region; a Schottky electrode disposed on the n type epitaxial layer and the second p+ region; and an ohmic electrode disposed on a second surface of the n+ type silicon carbide substrate. Also, the first p+ region has a lattice shape including a plurality of vertical portions and horizontal portions connecting both ends of the respective vertical portions to each other.
Hyundai Motor Company
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Youngkyun Kyoung-Kook Dae Hwan Junghee Jong Seok
Jung Hong Chun Park Lee