JCIPRNET
Under layer composition and method of manufacturing semiconductor device
Under layer composition and methods of manufacturing semiconductor devices are disclosed. The method of manufacturing semiconductor device includes the following steps. A layer of an under layer composition is formed, wherein the under layer composition includes a polymeric material and a cross-linker, and the cross-linker includes at least one decomposable functional group. A curing process is performed on the layer of the under layer composition to form an under layer, wherein the cross-linker is crosslinked with the polymeric material to form a crosslinked polymeric material having the at least one decomposable functional group. A patterned photoresist layer is formed over the under layer. An etching process is performed to transfer a pattern of the patterned photoresist layer to the under layer. The under layer is removed by decomposing the decomposable functional group.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H G G C
H01L H01L G03F G03F C09D
inventional inventional inventional inventional inventional
Ching-Yu Ming-Hui Chin-Hsiang Chen-Yu
Chang Weng Lin Liu