Vertical light emitting diode (VLED) dice having confinement layers with roughened surfaces and methods of fabrication
A vertical light emitting diode (VLED) die includes an epitaxial structure having a first-type confinement layer, an active layer on the first-type confinement layer configured as a multiple quantum well (MQW) configured to emit light, and a second-type confinement layer having a roughened surface. In a first embodiment, the roughened surface includes a pattern of holes with a depth (d) in a major surface thereof surrounded by a pattern of protuberances with a height (h) on the major surface. In a second embodiment, the roughened surface includes a pattern of primary protuberances surrounded by a pattern of secondary protuberances.
SemiLEDS Optoelectronics Co., Ltd.
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Hao-Chung Wen-Huang Chao-Chen Chen-Fu Yang Po Feng-Hsu David Trung
Cheng Liu Cheng Chu Wen Fan Doan