MH2 Technology Law Group LLP
Method of making heteroepitaxial structures and device formed by the method
A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.
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Daniel Stephen D. Seung-Chang Steven R. J.
Feezell Hersee Lee Brueck