Eschweiler & Potashnik, LLC
FeFET of 3D structure for capacitance matching
An MFMIS-FET includes a MOSFET having a three-dimensional structure that allows the MOSFET to have an effective area that is greater than the footprint of the MFM or the MOSFET. In some embodiment, the gate electrode of the MOSFET and the bottom electrode of the MFM are united. In some, they have equal areas. In some embodiments, the MFM and the MOSFET have nearly equal footprints. In some embodiments, the effective area of the MOSFET is much greater than the effective area of the MFM. These structures reduce the capacitance ratio between the MFM structure and the MOSFET without reducing the area of the MFM structure in a way that would decrease drain current.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H H H H H G H
H01L H01L H01L H01L H01L H01L H01L G11C H01L
inventional inventional inventional inventional inventional inventional inventional additional inventional
Tzu-Chiang Chih-Sheng Hung-Li
Chen Chang Chiang