Tutunjian & Bitetto, P.C.
Fabrication of logic devices and power devices on the same substrate
A method of forming a logic device and a power device on a substrate is provided. The method includes forming a first vertical fin on a first region of the substrate and a second vertical fin on a second region of the substrate, wherein an isolation region separates the first region from the second region, forming a dielectric under-layer segment on the second vertical fin on the second region, and forming a first gate structure on the dielectric under-layer segment and second vertical fin on the second region.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Juntao Liying Kangguo John G.
Li Jiang Cheng Gaudiello