Lowe Hauptman Ham & Berner, LLP
Memory device and method of fabricating the same
A memory device includes a first electrode, a second electrode spaced apart from the first electrode and a nanotube or nanowire network disposed between the first electrode and the second electrode, having a stacked structure of a P-type network and an N-type network, and having a diode characteristic. Since the nanotube or nanowire network has the stacked structure of the P-type network and the N-type network, and has the diode characteristic, it is possible to enhance a degree of integration of the memory device and simplify the fabrication processes without separately requiring a selection device.
Hynix Semiconductor Inc.
H H H Y Y B
H01L H01L H01L Y10S Y10S B82Y
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Seung-Hyun
Lee