High sensitivity resist compositions for electron-based lithography
The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.
International Business Machines Corporation
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G03F G03F
additional inventional
Wenjie Marie Wu-Song Wayne Robert N. David R. Karen E.
Li Angelopoulos Huang Moreau Lang Medeiros Petrillo