Arent Fox LLP
Semiconductor device and method for manufacturing the same having improved polarization reversal characteristic
A method for manufacturing a semiconductor device comprises: forming a lower electrode on a semiconductor substrate, sputtering a ferroelectric film on the lower electrode using a target, thermal treating the ferroelectric film in an atmosphere containing oxygen in accordance with an accumulated period of use of the target for fabricating the ferroelectric film, and forming an upper electrode on the ferroelectric film.
Fujitsu Semiconductor Limited
H G H H
H01L G11C H01L H01L
inventional inventional inventional inventional
Makoto Mitsushi Ko Wensheng Kenkichi
Takahashi Fujiki Nakamura Wang Suezawa