Myers Bigel & Sibley, P.A.
Semiconductor memory devices and methods of forming the same
Methods of forming semiconductor devices may be provided. A method of forming a semiconductor device may include patterning first and second material layers to form a first through region exposing a substrate. The method may include forming a first semiconductor layer in the first through region on the substrate and on sidewalls of the first and second material layers. In some embodiments, the method may include forming a buried layer filling the first through region on the first semiconductor layer. In some embodiments, the method may include removing a portion of the buried layer to form a second through region between the sidewalls of the first and second material layers. Moreover, the method may include forming a second semiconductor layer in the second through region.
Samsung Electronics Co., Ltd.
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JinGyun Jung Ho Kihyun Daehyun Sunghae Myoungbum Dongwoo Ju-Eun Yong-Hoon Sangryol
Kim Kim Hwang Jang Lee Lee Kim Kim Son Yang