Jianq Chyun IP Office
CMOS image sensor unit and method for fabricating the same
A CMOS image sensor unit and a method for fabricating the same are described. The image sensor unit includes a photodiode, a transfer gate, a reset gate, a source follower gate, a floating drain region between the transfer gate and the reset gate, and a PIP capacitor. The lower poly-Si electrode of the PIP capacitor is electrically connected with the floating drain region and the source follower gate to also serve as an interconnect between the floating drain region and the source follower gate. The fabrication method includes forming contact plugs on the floating drain region and the source follower gate, and then forming a PIP capacitor whose lower poly-Si electrode is connected with each contact plug.
Powerchip Technology Corporation
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inventional inventional inventional
Ming-Yu Min-Hui Ming-Wei Chih-Ping
Ho Chen Chen Chung