Sensing circuit
A circuit includes a degeneration p-channel metal-oxide-semiconductor (PMOS) transistor, a load PMOS transistor, and a clamp transistor configured to clamp a voltage applied to a resistance based memory element during a sensing operation. A gate of the load PMOS transistor is controlled by an output of a not-AND (NAND) circuit.
Industry-Academic Cooperation Foundation, Yonsei University QUALCOMM Incorporated
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Seung H. Jisu Jung Pill Kyungho Seong-Ook
Kang Kim Kim Ryu Jung