Hauptman Ham, LLP
Phase change memory operation method and circuit
A method includes applying a pulse sequence to a PCM device, each pulse of the pulse sequence including a pulse number, an amplitude, a leading edge, a pulse width, and a trailing edge, the trailing edge having a duration longer than a duration of the leading edge. Applying the pulse sequence includes increasing the pulse number while increasing at least one of the amplitude, the pulse width, or the trailing edge duration. A conductance level of the PCM device is altered in response to applying the pulse sequence.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Jau-Yi Chia-Wen Yu-Sheng
Wu Chang Chen