NSIP Law
Silicon carbide ingot manufacturing method and silicon carbide ingot manufactured thereby
A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.
SENIC INC.
C C C C
C30B C30B C30B C30B
inventional inventional inventional inventional
Byung Kyu Eun Su Jung Doo Kap-Ryeol Jong Hwi Jung Woo Sang Ki Jung-Gyu
Jang Yang Seo Ku Park Choi Ko Kim