Amin, Turocy & Watson, LLP
Gate-controlled p-i-n switch with a charge trapping material in the gate dielectric and a self-depleted channel
The subject disclosure presents power semiconductor devices, and methods for manufacture thereof, with a low on-state voltage drop and a low turn-off energy. In an aspect, a power semiconductor device is provided that embodies a normally off trench gate-controlled p-i-n switch with a charge trapping material in the gate dielectric and a self-depleted channel.
The Hong Kong University of Science and Technology
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Johnny Kin On Xianda
Sin Zhou