Green, Howard & Mughal LLP
Gallium nitride transistor having a source/drain structure including a single-crystal portion abutting a 2D electron gas
The present description relates to a gallium nitride transistor which includes at least one source/drain structure having low contact resistance between a 2D electron gas of the gallium nitride transistor and the source/drain structure. The low contact resistance may be a result of at least a portion of the source/drain structure being a single-crystal structure abutting the 2D electron gas. In one embodiment, the single-crystal structure is grown with a portion of a charge inducing layer of the gallium nitride transistor acting as a nucleation site.
Intel Corporation
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Han Wui Sanaz Seung Hoon Robert S. Sansaptak Marko
Then Gardner Sung Chau Dasgupta Radosavljevic