Hoffman Warnick LLC
Method of manufacturing semiconductor devices including replacement metal gate process incorporating a conductive dummy gate layer
A method of manufacturing a semiconductor device including a replacement metal gate process incorporating a conductive dummy gate layer (e.g., silicon germanium (SiGe), titanium nitride, etc.) and a related are disclosed. The method includes forming an oxide layer on a substrate; removing a gate portion of the oxide layer from the substrate in a first region of the semiconductor device; forming a conductive dummy gate layer on the semiconductor device in the first region; and forming a gate on the semiconductor device, the gate including a gate conductor disposed in the first region and directly connected to the substrate.
International Business Machines Corporation Global Foundries, Inc.
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Xiang Min Michael P. Xiaodong Yanxiang Jinping
Hu Dai Chudzik Yang Liu Liu