Birch, Stewart, Kolasch & Birch
MOSFET semiconductor device and manufacturing method thereof
 A method of forming a gate insulating film on a MOSFET. After a SiO.sub.2 film is formed by thermal oxidation as a gate insulating film on a MOSFET, the SiO.sub.2 film is removed by selective etching from the surface area other than the MOSFET region, and an oxygen doped semi-insulating polycrystalline silicon film is depostied thereon. Then, a silicon nitride layer is deposited and a SiO.sub.2 film is formed by CVD method on the surface area other than the MOSFET region. 
Sharp Kabushiki Kaisha
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inventional inventional inventional additional
Yukinori Nobuyuki
Nakakura Kato