Slater Matsil, LLP
Method for forming barrier layer for dielectric layers in semiconductor devices
A semiconductor device having a high-k gate dielectric, and a method of manufacture, is provided. A gate dielectric layer is formed over a substrate. An interfacial layer may be interposed between the gate dielectric layer and the substrate. A barrier layer, such as a TiN layer, having a higher concentration of nitrogen along an interface between the barrier layer and the gate dielectric layer is formed. The barrier layer may be formed by depositing, for example, a TiN layer and performing a nitridation process on the TiN layer to increase the concentration of nitrogen along an interface between the barrier layer and the gate dielectric layer. A gate electrode is formed over the barrier layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Sheng-Wen Yu-Ting Ting-Chun Che-Hao Wei-Ming
Chen Lin Wang Chang You