Myers Bigel Sibley & Sajovec
Magnetic memory devices and methods of forming the same
Provided are a magnetic memory device and a method of forming the same. The method may include forming a pinning pattern on a substrate; forming a first interlayer insulating layer that exposes the pinning pattern on the substrate; forming a pinned layer, a tunneling barrier layer and a second magnetic conductive layer on the pinning pattern; and forming a pinned pattern, a tunnel barrier pattern and a second magnetic conductive pattern by performing a patterning process on the pinned layer, the tunnel barrier layer and the second magnetic conductive layer.
Samsung Electronics Co., Ltd.
H
H01L
inventional
Byeungchul Seung-Yeol KyungTae
Kim Lee Nam