Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side sort, and corner short test areas
A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and corner short test areas.
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Andrzej Christopher Marcin Vyacheslav Kimon Markus Marci Jonathan Larg Hideki Hans Timothy Carl Dennis Nobuharu Sherry Simone Jeremy Tomasz Stephen Conor Kelvin John Rakesh Sheng-Che Indranil
Strojwas Hess Strojwas Rovner Michaels Rauscher Liao Haigh Weiland Matsuhashi Eisenmann Fiscus Taylor Ciplickas Yokoyama Lee Comensoli Cheng Brozek Lam O'Sullivan Doong Kibarian Vallishayee Lin De