Myers Bigel Sibley & Sajovec
High voltage insulated gate bipolar transistors with minority carrier diverter
High power insulated gate bipolar junction transistors are provided that include a wide band gap semiconductor bipolar junction transistor (“BJT”) and a wide band gap semiconductor MOSFET that is configured to provide a current to the base of the BJT. These devices further include a minority carrier diversion semiconductor layer on the base of the BJT and coupled to the emitter of the BJT, the minority carrier diversion semiconductor layer having a conductivity type opposite the conductivity type of the base of the BJT and forming a heterojunction with the base of the BJT.
Cree, Inc.
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Sei-Hyung Qingchun
Ryu Zhang