Johnson Kindess PLLC
Method of forming a gate oxide layer with an improved ability to resist the process damage
A method of forming a gate oxide layer with improved ability to resist process damage increases the reliability and yield of a transistor device. First, a nitrogen-containing gate oxide layer is formed on an element area of a silicon substrate. Then, a polysilicon layer is deposited on the gate oxide layer. Next, a gate doping process and a fluorine ion implantation are performed on the polysilicon layer. Then, a high-temperature tempering procedure is performed to make the fluorine enter the gate oxide layer.
National Science Council
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Tiao-Yuan Chun-Yen Horng-Chih Chi-Chun
Huang Chang Lin Chen