Lee & Morse, P.C.
Semiconductor device and method for manufacturing the same
A semiconductor device including a semiconductor substrate including a trench, the semiconductor substrate having a crystal structure; and an insulating layer covering an inner sidewall of the trench, wherein the inner sidewall of the trench has at least one plane included in a {320} family of planes of the crystal structure or at least one plane similar to the {320} family of planes.
SAMSUNG ELECTRONICS CO., LTD.
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Min Hee Junsoo Kyo-Suk Joohyun Hyoshin Sungsam Satoru Chunhyung MoonYoung Eunae
Cho Kim Chae Jeon Ahn Lee Yamada Chung Jeong Choi