Hauptman Ham, LLP
Semiconductor device
A semiconductor device includes a gate structure over a substrate, a source region in the substrate, where the source region is adjacent to the gate structure. Additionally, the semiconductor device includes a drain region in the substrate, where the drain region is adjacent to the gate structure. Moreover, the semiconductor device includes a first dislocation in the substrate between the source region and the drain region. Furthermore, the semiconductor device includes a second dislocation in the substrate between the source region and the drain region, where the second dislocation is substantially parallel to the first dislocation.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Li-Ping Ming-Shuan Wei-Ching Kuan-Chung Wei-Yuan Hsueh-Jen Han-Ting
Huang Li Wang Chen Lu Yang Tsai