Slater Matsil, LLP
3DIC structure and methods of forming
A method is provided. The method includes providing a first wafer having a plurality of first dummy pads exposed along a first surface of the first wafer. The first dummy pads contact a first metallization layer of the first water. The method also includes providing a second wafer having a plurality of second dummy pads exposed along a first surface of the second wafer. The second dummy pads contact a second metallization layer of the second wafer. The method also includes bonding the first wafer to the second wafer in a manner that the first surface of the first wafer contacts the first surface of the second wafer and the plurality of first dummy pads are interleaved with the plurality of second dummy pads but do not contact the plurality of second dummy pads.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Sheng-Chau Zhi-Yang Cheng-Hsien Kuo-Ming Yung-Lung
Chen Wang Chou Wu Lin