Townsend and Townsend and Crew LLP
Ion implantation apparatus and method for obtaining non-uniform ion implantation energy
An ion implantation apparatus includes an ion beam source for generating an ion beam; an implantation energy controller disposed on a path of the ion beam for controlling the ion implantation energy of the ion beam so that an ion beam having a first implantation energy is created for a first period of time and an ion beam having a second implantation energy is created for a second period of time; a beam line for accelerating the ion beam; and an end station for mounting a substrate, into which the ion beam accelerated by the beam line is implanted onto the substrate.
Hynix Semiconductor Inc.
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Seung Woo Min Yong Yong Soo Kyoung Bong
Jin Jung Jung Rouh