System and method to fabricate magnetic random access memory
A system and method to fabricate magnetic random access memory is disclosed. In a particular embodiment, a method of aligning a magnetic film during deposition is disclosed. The method includes applying a first magnetic field along a first direction in a region in which a substrate resides during a deposition of a first magnetic material onto the substrate. The method further includes applying a second magnetic field along a second direction in the region during the deposition of the first magnetic material onto the substrate.
QUALCOMM Incorporated
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H01F B82Y B82Y G11C H01L H01L
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Xiaochun Xia Seung H.
Zhu Li Kang