Green, Howard & Mughal LLP
Germanium tin channel transistors
Techniques related to transistors and integrated circuits having germanium tin, systems incorporating such transistors, and methods for forming them are discussed. Such transistors include a channel region that comprises a germanium tin portion of a fin such that the fin includes a buffer layer disposed over a substrate and the germanium tin portion disposed over the buffer layer.
Intel Corporation
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Ravi Jack T. Van H. Sansaptak Roza Benjamin Marko Han Wui Willy Gilbert
Pillarisetty Kavalieros Le Dasgupta Kotlyar Chu-Kung Radosavljevic Then Rachmady Dewey