IPUSA, PLLC
Semiconductor device
A disclosed semiconductor device includes a gate insulation film formed on a silicon substrate and a metal gate electrode formed in the gate insulation film, wherein the gate insulation film includes a first insulation film, a second insulation film that is formed on the first insulation film and has a greater dielectric constant than the first insulation film, and a third insulation film formed on the second insulation film.
Tokyo Electron Limited National Institute of Advanced Industrial Science and Technology
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Koji Wenwu
Akiyama Wang