Tutunjian & Bitetto, P.C.
Transistors with dielectric-isolated source and drain regions
Semiconductor devices and method of forming the same include forming a sacrificial layer on source/drain regions of a semiconductor layer. A reactant layer is formed on the sacrificial layer. The reactant layer and sacrificial layer are annealed to convert the reactant layer to a dielectric layer. Source and drain regions are formed on the dielectric layer.
International Business Machines Corporation
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Kangguo Choonghyun Juntao Peng
Cheng Lee Li Xu