Pennie & Edmonds LLP
Method of manufacturing a semiconductor device
There is disclosed a method of manufacturing a semiconductor device ion by which an epitaxial growth film into which boron is doped in-situ is formed before a gate oxide film is formed after formation a well region for forming a MOS device and using it as a channel threshold voltage control layer, thus forming a counter-doped boron layer having an uniform and still higher concentration than the threshold voltage control layer formed by the conventional ion implantation process at the surface of the silicon substrate. As a result, it can make a device having a more sharp profile of the threshold voltage profile at the channel and having an improved short channel characteristic by the combination of the channel and junction engineering.
Hyundai Electronics Industries Co., Ltd.
H H H
H01L H01L H01L
inventional inventional inventional
Jung Ho Seung Chul
Lee Lee