Harness, Dickey & Pierce, P.L.C.
Non-volatile memory devices having data storage layer
Provided are a non-volatile memory device, which may have a stacked structure and may be easily integrated at increased density, and a method of fabricating and using the non-volatile memory device. The non-volatile memory device may include at least one pair of first electrode lines. At least one second electrode line may be between the at least one pair of first electrode lines. At least one data storage layer may be between the at least one pair of first electrode lines and the at least one second electrode line and may locally store a resistance change.
Samsung Electronics Co., Ltd.
G H H G H H H H H H
G11C H01L H01L G11C H01L H01L H01L H01L H01L H01L
inventional additional additional inventional inventional additional inventional additional additional additional
Won-joo Yoon-dong Young-gu Seung-hoon Suk-pil
Kim Park Jin Lee Kim