Haynes and Boone, LLP
Method and structure for finFET devices
A semiconductor device and a method of forming the same are disclosed. The device comprises a semiconductor substrate comprised of a first semiconductor material and having a plurality of isolation features, thereby defining a first active region and a second active region; a first fin semiconductor feature comprised of a second semiconductor material and formed in the first active region; and a second fin semiconductor feature comprised of a second semiconductor material and formed in the second active region. The first fin semiconductor feature is tensile strained and the second fin semiconductor feature is compressively strained.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Wen-Hsien Shih-Hsien Cheng-Yi Chih-Sheng Yee-Chia CheeWee
Tu Huang Peng Chang Yeo Liu