Thin film transistor and manufacturing method thereof
The present invention provides a thin film transistor and a manufacturing method thereof. The thin film transistor includes a substrate, a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode, and a passivation layer. Both structures of the source electrode and the drain electrode are a three-layered metal structure, and the three-layered metal structure is a titanium tantalum/copper/titanium tantalum structure. Therefore, after the passivation layer is applied to the source electrode and the drain electrode, a bulging problem of the passivation layer can be effectively improved, and thus the thin film transistor has better plasticity and can be used for flexible displays.
H H H H H
H01L H01L H01L H01L H01L
inventional inventional inventional inventional additional
Jingjing
Liu