Fitzpatrick, Cella, Harper & Scinto
Amorphous oxide and field effect transistor
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
Canon Kabushiki Kaisha Tokyo Institute of Technology Japan Science and Technology Agency
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Kenji Hideo Katsumi Toshio Masafumi
Nomura Hosono Nakagawa Kamiya Sano