JCIPRNET
Methods of forming semiconductor devices and FinFET devices having shielding layers
Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate and a gate structure over the substrate. The gate structure includes a high-k layer over the substrate, a shielding layer over the high-k layer, and an N-type work function metal layer over the shielding layer. In some embodiments, the shielding layer has a dielectric constant less than a dielectric constant of the high-k layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional additional inventional inventional inventional inventional additional inventional inventional additional additional additional inventional additional inventional
Che-Hao Chi-On Xiong-Fei Kuei-Lun Cheng-Hao Kun-Yu
Chang Chui Yu Lin Hou Lee