Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and corner short test areas
A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and corner short test areas.
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Larg Dennis Hans Kelvin Andrzej Jonathan John Stephen Rakesh Vyacheslav Sheng-Che Markus Marci Tomasz Simone Christopher Sherry Hideki Timothy Conor Carl Kimon Indranil Marcin Jeremy Nobuharu
Weiland Ciplickas Eisenmann Doong Strojwas Haigh Kibarian Lam Vallishayee Rovner Lin Rauscher Liao Brozek Comensoli Hess Lee Matsuhashi Fiscus O'Sullivan Taylor Michaels De Strojwas Cheng Yokoyama