Lee & Morse, P.C.
Method of programming a multi bit flash memory device to avoid programming errors and a device implementing the same
A method of programming a multi bit flash memory device may perform a kth preliminary verify read operation before performing a kth program operation according to a kth page of program data, where n and k integers, n≧2, and 1≦k≦n. That is, where a (k−1)th program operation produces one or more expanded threshold voltage distribution regions due to the presence of fast cells, the kth preliminary verify read operation may detect fast cells that have already reached their target threshold states without having had to undergo the kth program operation. The kth preliminary verify read operation also may set the detected fast cells to have program-inhibit status so as to reduce or prevent undesired further programming of the detected fast cells that would otherwise occur during the kth program operation.
Samsung Electronics Co., Ltd.
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Seung-Jae
Lee