Keating & Bennett, LLP
Ferroelectric thin film device and method of producing the same
A ferroelectric thin film device comprises an Si substrate; a TiN thin film whose Ti component is partially replaced with Al, the TiN thin film being formed on the Si substrate; and a ferroelectric thin film of an oxide with a perovskite structure formed on the TiN thin film, wherein the amount of Al atoms present at Ti sites of the TiN thin film after partially replacing Ti with Al is within the range from about 1% to 30% and the oxygen atomic content of the TiN thin film is equal to or less than about 5%.
Murata Manufacturing Co., Ltd.
H
H01L
inventional
Kosuke Xiao-min Atsushi
Shiratsuyu Li Sakurai