Ostrolen, Faber, Gerb & Soffen, LLP
Process of fabricating a thermoelectric module formed of V-VI group compound semiconductor including the steps of rapid cooling and hot pressing
 A process wherein powder of p/n-type semiconductor thermoelectric materials expressed as (Bi, Sb).sub.2 (Te, Se).sub.3 is hot pressed under the pressure equal to or greater than 400 kgf/cm.sup.2 at 200 degrees to 400 degrees in centigrade for a time period between {(-T/5)+90} minutes and 150 minutes or at 400 degrees to 500 degrees in centigrade for a time period between 5 minutes and 150 minutes so as to increase the figure of merit by virtue of the strain left in the crystal and/or micro crystal grain, and pieces of p/n-type semiconductor thermoelectric material are assembled with electrodes so as to obtain a thermoelectric module for a high thermoelectric conversion efficiency. 
Yamaha Corporation
H
H01L
inventional
Toshiharu Yuma Hiroyuki
Hoshi Horio Yamashita