Harness, Dickey & Pierce, P.L.C.
Non-volatile memory devices and methods of operating the same
A non-volatile memory device includes memory transistors disposed on a semiconductor substrate in a NAND string. A string select transistor is disposed at a first end of the NAND string, and a ground select transistor is disposed at a second end of the NAN string. Bit lines are electrically connected to the semiconductor substrate outside of the string select transistor and a gate electrode of the ground select transistor.
Samsung Electronics Co., Ltd.
H H G H H H
H01L H01L G11C H01L H01L H01L
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Seung-hoon Jung-hun Won-joo Yoon-dong Jae-woong Tae-hee Suk-pil
Lee Sung Kim Park Hyun Lee Kim