Method for forming a hemispherical-grain polysilicon
 An irradiation process method for forming polysilicon layer is disclosed. The method includes firstly forming an alpha-silicon layer on substrate. Then the temperature of the UHV-CVD chamber is increased and the wafer is sent into the chamber. Gas is then intermittently conducted into the vacuum-chamber apparatus. While increasing the temperature of the vacuum-chamber apparatus, the whole throughput thus increases and the process-time for the polysilicon layer thus decreases. Finally, the electrical capacity thus increases by forming the polysilicon layer. 
Mosel Vitelic Inc.
H
H01L
inventional
Ping-Wei Ming-Kuan Yi-Shin Jui-Ping
Lin Kao Chang Li