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MOS device for eliminating floating body effects and self-heating effects
A SOI MOS device for eliminating floating body effects and self-heating effects are disclosed. The device includes a connective layer coupling the active gate channel to the Si substrate. The connective layer provides electrical and thermal passages during device operation, which could eliminate floating body effects and self-heating effects. An example of a MOS device having a SiGe connector between a Si active channel and a Si substrate is disclosed in detail and a manufacturing process is provided.
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science
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Xiaolu Xi Deyuan Jing
Huang Wang Xiao Chen