Method for forming binary intensity masks
A method for forming a binary intensity mask (BIM) using two writing steps. The first writing step has a narrow writing area, preferably about 1 micron, and outlines the desired pattern. The second writing area partially overlaps the first writing area, preferably by less than half of the E-beam diameter used for writing. The second writing does not overlap the desired pattern. The chromium layer of the BIM is dry etched after the first writing, providing good edge definition and dimensional stability. The chromium layer of the BIM is wet etched following the second writing reducing mask defects.
Taiwan Semiconductor Manufacturing Company
G G G
G03F G03F G03F
inventional inventional inventional
Shy-Jay Wen-Chuan
Lin Wang