Sughrue Mion, PLLC
Plasma etching method
Provided is a plasma etching method comprising supplying both hexafluoroisopropanol (HFIP) gas and argon (Ar) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.
AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
Y C Y C H
Y02C C09K Y02P C09K H01L
additional inventional additional inventional inventional
Chang-Koo Jun-Hyun Jin-Su
Kim Kim Park