Chemical mechanical polishing pad having improved groove pattern
A chemical mechanical polishing pad and method for chemical-mechanical polishing is provided, wherein the polishing pad has a plurality of first mesas and one or more second mesas defined on a surface thereof. The plurality of first mesas are generally distributed about the surface of the polishing pad, wherein each of the plurality of first mesas has a first surface area associated therewith. The one or more second mesas are associated with a center region of the polishing pad, wherein each of the one or more second mesas has a second surface area associated therewith. The second surface area is at least twice the first surface area.
Texas Instruments Incorporated
B
B24B
inventional
Jingqiu Yaojian Yanghua
Chen Leng He