Method for fabricating semiconductor device
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon and a shallow trench isolation (STI) around the fin-shaped structure, in which the fin-shaped structure has a top portion and a bottom portion; forming a first doped layer on the STI and the top portion; and performing a first anneal process.
UNITED MICROELECTRONICS CORP.
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Li-Wei Yi-Ren Shou-Wei Ching-Yu Chien-Ting Shih-Hung Jyh-Shyang Ssu-I Chun-Hao Hsin-Yu
Feng Chen Hsieh Chang Lin Tsai Jenq Fu Lin Chen