CKC & Partners Co., Ltd.
Trench power MOSFET structure and fabrication method thereof
A trench power MOSFET structure and fabrication method thereof is provided. The fabrication method comprises following process. First, form an isolating trench. Then, form at least two doped regions around the isolating trench. The doped regions are adjacent and the doping concentrations of two doped regions are different. Form an isolating structure in the isolating trench. Wherein, the junction profiles of the two doped regions are made by ion implantation method for moderate the electric field distribution and decreasing the conduction loss.
Super Group Semiconductor Co., Ltd.
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Hsiu-Wen Yuan-Ming Chun-Ying
Hsu Lee Yeh