Hass & Nesbitt LLC
Thin film transistor, manufacturing method thereof, and TFT LCD using the same
A thin film transistor (TFT) that comprises a gate electrode on a substrate, a gate insulation layer on the gate electrode, an active layer having a source region, a drain region, and a channel region on the gate insulation layer, and a source electrode and a drain electrode formed over the source region and drain region of the active layer respectively and facing each other with respect to the channel region. The profile of channel region between the source electrode and drain electrode is changed in a bend line. A method for forming the TFT is also provided.
Beijing Boe Optoelectronics Technology Co., Ltd.
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H01L H01L G02F H01L H01L
inventional inventional additional additional inventional
Wei Hongjiang Chunping Chang Hee
Wang Wu Long Lee