Patterson + Sheridan, LLP
Thin film treatment process
A method of modifying a layer in a semiconductor device is provided. The method includes depositing a low quality film on a semiconductor substrate, and exposing a surface of the low quality film to a first process gas comprising helium while the substrate is heated to a first temperature, and exposing a surface of the low quality film to a second process gas comprising oxygen gas while the substrate is heated to a second temperature that is different than the first temperature. The electrical properties of the film are improved by undergoing the aforementioned processes.
Applied Materials, Inc.
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Theresa Kramer Lara Kin Pong Malcolm Rene Vladimir Johanes S. Wei Linlin Bernard L.
Guarini Hawrylchak Lo Bevan George Nagorny Swenberg Liu Wang Hwang