Slater & Matsil, L.L.P.
Forming pocket and LDD regions using separate masks
A method of decoupling the formation of LDD and pocket regions is provided. The method includes providing a semiconductor chip including active regions, forming gate structures in the active regions, forming N-LDD regions on the semiconductor chip using an N-LDD mask, forming N-Pocket regions on the semiconductor chip using an N-Pocket mask, forming P-LDD regions on the semiconductor chip using a P-LDD mask, and forming P-Pocket regions on the semiconductor chip using a P-Pocket mask.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H H
H01L H01L H01L H01L
inventional inventional inventional inventional
Michael Chun-Hong Chih-Ping Chih-Sheng
Yu Chen Chao Chang