Myers Bigel Sibley & Sajovec, PA
Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same
Provided are 1) a method for forming a ruthenium film under a single process condition, whereby high adhesion of the ruthenium film to a lower layer is maintained, and 2) a method for manufacturing an metal-insulator-metal (MIM) capacitor using the ruthenium film forming method. The method for forming a ruthenium film includes supplying bis(isoheptane-2,4-dionato)norbornadiene ruthenium at a flow rate of 0.2–1 ccm and oxygen at a flow rate of 20–60 sccm, and depositing the ruthenium film at a temperature of 330–430° C. under a pressure of 0.5–5 Torr using chemical vapor deposition (CVD).
Samsung Electronics Co., Ltd.
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Sung-tae Suk-jin Han-jin Jung-hee Jin-il Wan-don Cha-young Kwang-hee
Kim Chung Lim Chung Lee Kim Yoo Lee