Oblon, McClelland, Maier & Neustadt, L.L.P.
Semiconductor memory device
A semiconductor memory device includes a first stacked body, a semiconductor pillar extending the first direction and piercing the first stacked body, and a memory film disposed between the semiconductor pillar and the electrode film. The first stacked body includes a plurality of electrode films and a plurality of inter-layer insulating films stacked alternately along the first direction. The plurality of electrode films and the plurality of inter-layer insulating films extend in a second direction intersecting the first direction. Each of the electrode films includes a central portion and a peripheral portion. The central portion is disposed in a central part of the electrode film in a third direction, and includes silicon. The third direction intersects the first direction and the second direction. The peripheral portion is disposed on two sides of the central portion in the third direction, extends in the second direction and includes a metal.
Kabushiki Kaisha Toshiba
H H H H H
H01L H01L H01L H01L H01L
inventional inventional inventional additional inventional
Hiroki
Yamashita