Lowe Hauptman & Ham, LLP
Pad design for backside illuminated image sensor
A semiconductor image sensor device includes first and second semiconductor substrates. A pixel array and a control circuit are formed in a first surface of the first substrate. An interconnect layer is formed over the first surface of the first substrate and electrically connects the control circuit to the pixel array. A top conducting layer is formed over the interconnect layer to have electrical connectivity with at least one of the control circuit or the pixel array via the interconnect layer. A surface of a second substrate is bonded to the top conducting layer. A conductive through-silicon-via (TSV) passes through the second substrate, and has electrical connectivity with the top conducting layer. A terminal is formed on an opposite surface of the second substrate, and electrically connected to the TSV.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
H H H H H
H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional
Jeng-Shyan Jen-Cheng Dun-Nian Wen-De Chun-Chieh
Lin Liu Yaung Wang Chuang