Toler Law Group, PC
System and method of programming a memory cell
A method includes applying a programming voltage to a drain of an access transistor, where a source of the access transistor is coupled to a drain region of a one-time programmable (OTP) device. The method also includes applying a first voltage to a gate of the OTP device and a second voltage to a terminal of the OTP device to bias a channel region of the OTP device, where the first voltage and the second voltage are substantially equal.
Qualcomm Incorporated
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Seung Hyuk Xiaochun Xia
Kang Zhu Li