Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Method for manufacturing molecular memory device
According to one embodiment, a method for manufacturing a molecular memory device includes: forming a first wiring layer including a plurality of first wirings extending in a first direction; forming a sacrificial film on the first wiring layer; forming a plurality of core members on the first wiring layer, the core member extending in a second direction crossing the first direction and being formed from an insulating material different from the sacrificial film; forming a second wiring on a side surface of the core member; removing a portion of the sacrificial film located immediately below the second wiring; embedding a polymer; and embedding an insulating. The embedding a polymer includes embedding a polymer serving as a memory material between the first wiring and the second wiring. The embedding an insulating member includes embedding an insulating member in a space between the second wirings between the core members.
Kabushiki Kaisha Toshiba
H G H H H H G
H01L G11C H01L H01L H01L H01L G11C
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Hiroki
Yamashita