Tutunjian & Bitetto, P.C.
Vertical fin field effect transistor devices with self-aligned source and drain junctions
A method of forming a fin field effect transistor device is provided. The method includes forming a plurality of vertical fins on a substrate. The method further includes forming a bottom source/drain layer adjacent to the plurality of vertical fins, and growing a doped layer on the bottom source/drain layer and sidewalls of the plurality of vertical fins. The method further includes forming a dummy gate liner on the doped layer and the bottom source/drain layer, and forming a dummy gate fill on the dummy gate liner. The method further includes forming a protective cap layer on the dummy gate fill, and removing a portion of the protective cap layer to expose a top surface of the plurality of vertical fins.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Kangguo Shogo Choonghyun Juntao
Cheng Mochizuki Lee Li