McClure, Qualey & Rodack, LLP
Image sensor device structure with doping layer in light-sensing region
An image sensor device structure is provided. The image sensor device structure includes a substrate, and the substrate is doped with a first conductivity type. The image sensor device structure includes a light-sensing region formed in the substrate, and the light-sensing region is doped with a second conductivity type that is different from the first conductivity type. The image sensor device structure further includes a doping region extended into the light-sensing region, and the doping region is doped with the first conductivity type. The image sensor device structure also includes a plurality of color filters formed on the doping region.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Shyh-Fann Yu-Jen Hsiao-Hui Chun-Yuan Wei-Chuang Dun-Nian Yen-Ting Jen-Cheng
Ting Wang Tseng Chen Wu Yaung Chiang Liu