Patterson + Sheridan, LLP
Process chamber for cyclic and selective material removal and etching
A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.
Applied Materials, Inc.
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Junghoon Soonam Dmitry Toan Q.
Kim Park Lubomirsky Tran