Merchant & Gould P.C.
Method for manufacturing a tunneling field effect transistor with a U-shaped channel
The present invention belongs to the technical field of semiconductor device manufacturing and specifically relates to a method for manufacturing a tunneling field effect transistor with a U-shaped channel. The U-shaped channel can effectively extend the transistor channel length, restrain the generation of leakage current in the transistor, and decrease the chip power consumption. The method for manufacturing a tunneling field effect transistor with a U-shaped channel put forward in the present invention is capable of realizing an extremely narrow U-shaped channel, overcoming the alignment deviation introduced by photoetching, and improving the chip integration degree.
FUDAN University
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additional inventional inventional inventional additional
Xi Wei Wei Pengfei Qingqing
Lin Zhang Liu Wang Sun