Junctionless nanowire transistor and manufacturing method for the same
A junctionless nanowire transistor and a manufacturing method for the same are disclosed. Two terminals of each of the channel nanowires disposed in the transistor are respectively connected with the source region and the drain region; the source region, the drain region and the channel nanowires uses a same doping material such that the on-state current of the transistor is increased, and the uniformity of the transistor is increased. Besides, the multiple channel nanowires are disposed above the active layer in a stacked arrangement to increase the integration of the transistor.
Wuhan China Star Optoelectronics Technology Co., Ltd
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Bo Wei Jun
Liang Wang Li