Fujitsu Patent Center
Semiconductor device and method for manufacturing the same
A method for manufacturing a semiconductor device including, forming a first insulating film above a silicon substrate, forming an impurity layer in the first insulating film by ion-implanting impurities into a predetermined depth of the first insulating film, and modifying the impurity layer to a barrier insulating film by annealing the first insulating film after the impurity layer is formed, is provided.
Fujitsu Semiconductor Limited
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Hideaki Tomoyuki Kouichi
Kikuchi Kikuchi Nagai