Kenyon & Kenyon
Charged particle beam lithography apparatus for forming pattern on semi-conductor
 In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed. 
Hitachi, Ltd.
B H B H
B82Y H01J B82Y H01J
inventional inventional inventional additional
Hidetoshi Yasuhiro Hiroyuki Yasunari Masahide Yoshinori
Satoh Someda Ito Sohda Okumura Nakayama