Cantor Colburn LLP
Enriched, high mobility strained fin having bottom dielectric isolation
Embodiments are directed to a method of enriching and electrically isolating a fin of a FinFET. The method includes forming at least one fin. The method further includes forming under a first set of conditions an enriched upper portion of the at least one fin. The method further includes forming under a second set of conditions an electrically isolated region from a lower portion of the at least one fin, wherein forming under the first set of conditions is spaced in time from forming under the second set of conditions. The method further includes controlling the first set of conditions separately from the second set of conditions.
INTERNATIONAL BUSINESS MACHINES CORPORATION
H H H H H
H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional
Chih-Chao Juntao Bruce B. Junli Hong
Yang Li Doris Wang He