Thompson Hine LLP
Enlarged sacrificial gate caps for forming self-aligned contacts
Methods of forming a sacrificial gate cap and a self-aligned contact for a device structure. A gate electrode is arranged between a first sidewall spacer and a second sidewall spacer. A top surface of the gate electrode is recessed to open a space above the top surface of the recessed gate electrode that partially exposes the first and second sidewall spacers. Respective sections of the first and second sidewall spacers, which are arranged above the top surface of the recessed gate electrode, are removed in order to increase a width of the space. A sacrificial cap is formed in the widened space.
GLOBALFOUNDRIES Inc.
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inventional additional inventional
Haiting Ashish Kumar Chih-Chiang Mitchell
Wang Jha Chang Rutkowski