Method to improve the roughness of metal deposition on low-k material
 A new method is provided to treat the surface of a low-k material. The invention is specifically aimed at the improvement of the TaN barrier layer that is used in the deposition of a dual damascene structure. The invention uses e-beam exposure to improve the barrier metal (PVD TaN) properties for copper and low-k applications. 
Industrial Technology Research Institute
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inventional inventional inventional inventional
Chung-I Lai-Juh
Chang Chen