Lewis Roca Rothgerber Christie LLP
Semiconductor device including a repeater/buffer at higher metal routing layers and methods of manufacturing the same
A semiconductor device includes a series of metal routing layers and a complementary pair of planar field-effect transistors (FETs) on an upper metal routing layer of the metal routing layers. The upper metal routing layer is M3 or higher. Each of the FETs includes a channel region of a crystalline material. The crystalline material may include one or more transition metal dichalcogenide materials such as MoS2, WS2, WSe2, and/or combinations thereof.
Samsung Electronics Co., Ltd.
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Rwik Wei-E Mark S. Borna J. Titash Ryan
Sengupta Wang Rodder Obradovic Rakshit Hatcher