Haynes and Boone, LLP
Method to define multiple layer patterns using double exposures
A method of fabricating a semiconductor device includes forming a first photoresist layer over a substrate, over which a protective layer material is deposited to form a protective layer. A second photoresist layer is formed over the protective layer. A first lithography exposure process is performed, through a first mask, to expose the first and second photoresist layers, and to form a bottom latent pattern. A second lithography exposure process is performed, through a second mask, to expose the first and second photoresist layers, and to form a top latent pattern, where the top latent pattern at least partially overlaps the bottom latent pattern. The first and second photoresist layers and the protective layer are developed to form a first main feature and a second main feature from the bottom and top latent patterns respectively, and an opening in the protective layer vertically aligned with the second main feature.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Ching-Yu Ming-Huei Chun-Kuang
Chang Weng Chen