Sughrue Mion, PLLC
Schottky diode having low breakdown voltage and method for fabricating the same
Provided are a schottky diode having an appropriate low breakdown voltage to be used in a radio frequency identification (RFID) tag and a method for fabricating the same. The schottky diode includes a silicon substrate having a structure in which an N-type well is formed on a P-type substrate, an insulating layer surrounding a circumference of the N-type well so as to electrically separate the N-type well from the P-type substrate, an N+ doping layer partly formed in a portion of a region of an upper surface of the N-type well, an N− doping layer partly formed in the other portion of a region of the upper surface of the N-type well, a cathode formed on the N+ doping layer, and an anode formed on the N− doping layer.
Samsung Electronics Co., Ltd.
H H
H01L H01L
inventional inventional
Dong-sik Hyung Young-hoon
Shim Choi Min