Hauptman Ham, LLP
Fin field effect transistor (FinFET) device having position-dependent heat generation
A semiconductor device including a substrate having a major surface. The semiconductor device further includes a dielectric material on the major surface of the substrate. The semiconductor device further includes a first plurality of fins extending from the major surface of the substrate, wherein the dielectric material surrounding each fin of the first plurality of fins has a first thickness. The semiconductor device further includes a second plurality of fins extending from the major surface of the substrate, wherein a first fin of the second plurality of fins is on a first side of the first plurality of fins, a second fin of the second plurality of fins is on a second side of the first plurality of fins opposite the first side, the dielectric material surround each fin of the second plurality of fins has a second thickness, and the second thickness is different from the first thickness.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Sheng-Feng Jiaw-Ren Jhong-Sheng Chun-Wei
Liu Shih Wang Chang