Nixon & Vanderhye
Thin film capacitive memory device with a high dielectric constant
 A semiconductor device comprising a capacitor which comprises a lower electrode, a dielectric insulating film of a metal oxide, and a upper electrode. The lower electrode is made of at least yttrium (Y) or hafnium (Hf). 
Sharp Kabushiki Kaisha
H H H H H
H01L H01L H01L H01L H01L
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Kouji
Taniguchi