Haynes and Boone, LLP
Negative capacitance FET with improved reliability performance
A negative capacitance device includes a semiconductor layer. An interfacial layer is disposed over the semiconductor layer. An amorphous dielectric layer is disposed over the interfacial layer. A ferroelectric layer is disposed over the amorphous dielectric layer. A metal gate electrode is disposed over the ferroelectric layer. At least one of the following is true: the interfacial layer is doped; the amorphous dielectric layer has a nitridized outer surface; a diffusion-barrier layer is disposed between the amorphous dielectric layer and the ferroelectric layer; or a seed layer is disposed between the amorphous dielectric layer and the ferroelectric layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional additional inventional inventional inventional
Carlos H. Chih-Sheng Chun-Chieh Cheng-Yi Ling-Yen Chien-Hsing
Diaz Chang Lu Peng Yeh Lee