Haynes and Boone, LLP
Gate structures with various widths and method for forming the same
Embodiments of a semiconductor device structure and a method for forming the same are provided. The semiconductor device structure includes a substrate and a first metal gate structure formed over the substrate. The first metal gate structure has a first width. The semiconductor device structure further includes a first contact formed adjacent to the first metal gate structure and a second metal gate structure formed over the substrate. The second metal gate structure has a second width smaller than the first width. The semiconductor device structure further includes an insulating layer formed over the second metal gate structure and a second contact self-aligned to the second metal gate structure.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chia-Ming Jyun-Ming Tsung-Yu Wei-Shuo
Chang Lin Chiang Ho