Method of fabricating a stringerless flash memory
A stringer block is formed on the interface between a HDP silicon oxide layer and a silicon substrate. During an etching process for defining the profile of a floating gate, the stringer block functions to expose a bottom corner stringer. Following that, a polysilicon etching process effectively removes the bottom corner stringer. As a result, a stringerless flash memory cell is formed to prevent leakage currents, resulting from the bottom corner stringer, and improve both the reliability and data retention ability of the device.
Macronix International Co., Ltd.
H H
H01L H01L
inventional inventional
Ching-Yu
Chang