Wood, Herron & Evans LLP
ESD field-effect transistor and integrated diffusion resistor
An electrostatic discharge protection device, methods of fabricating an electrostatic discharge protection device, and design structures for an electrostatic discharge protection device. A drain of a first field-effect transistor and a diffusion resistor of higher electrical resistance may be formed as different portions of a doped region. The diffusion resistor, which is directly coupled with the drain of the first field-effect transistor, may be defined using an isolation region of dielectric material disposed in the doped region and selective silicide formation. The electrostatic discharge protection device may also include a second field-effect transistor having a drain as a portion the doped region that is directly coupled with the diffusion resistor and indirectly coupled by the diffusion resistor with the drain of the first field-effect transistor.
International Business Machines Corporation
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Shunhua T. Rahul Robert J. Mujahid Kiran V. Junjun John B.
Chang Mishra Gauthier, Jr. Muhammad Chatty Li Campi, Jr.