Jianq Chyun IP Office
Structure for preventing burnt fuse pad from further electrical connection
A semiconductor device with a capability can prevent a burnt fuse pad from re-electrical connection, wherein the semiconductor device includes a bump pad and a fuse pad over a wafer. The fuse pad includes the burnt fuse pad having a gap for electrical isolation. The semiconductor device comprises a dielectric layer, disposed substantially above the burnt fuse pad and filling the gap, and a bump structure, disposed on the bump pad. The foregoing semiconductor device can further comprise a passivation layer, which exposes the bump pad and a portion of the burnt fuse pad. Wherein, the dielectric layer is over the passivation layer, covers the exposed portion of the burnt fuse pad and fills the gap.
Advanced Semiconductor Engineering, Inc.
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Min-Lung Yu-Chen Ching-Huei Tsung-Hua Yung-Chi Jau-Shoung Ho-Ming Chao-Fu Chun-Chi Su Jen-Kuang
Huang Chou Su Wu Lee Chen Tong Weng Lee Tao Fang