Townsend and Townsend and Crew LLP
Semiconductor device with bulb-type recessed channel and method for fabricating the same
A method for fabricating a semiconductor device includes providing a substrate having a bulb-type recessed region, forming a gate insulating layer over the bulb-type recessed region and the substrate, and forming a gate conductive layer over the gate insulating layer. The gate conductive layer fills the bulb-type recessed region. The gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers.
Hynix Semiconductor Inc.
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Kwon Seung-Ryong Se-Aug Tae-Yoon Heung-Jae Yong-Soo Hong-Seon Kwan-Yong Seung-Ho Min-Gyu
Hong Lee Jang Kim Cho Kim Yang Lim Pyi Sung