Nixon & Vanderhye P.C.
Thin film transistor with piezoelectric film
 A thin film transistor is disclosed comprising a piezoelectric film formed on a piezoresistive body of an ultra thin film and a gate electrode formed on the piezoelectric film. Due to the force generated from the piezoelectric film by an electric field generated according to the strength of a voltage applied to the gate electrode, a pressure is applied on the piezoresistive body to vary the resistance of the piezoresistive body. Thus, the quantity of current that flows from a source terminal through the piezoresistive channel to a drain terminal can be controlled. Since the piezoresistive body can be formed on a plane, a thin film transistor with a three-dimensional structure can be manufactured. 
Electronics and Telecommunications Research Institute
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inventional inventional additional additional
Min-Cheol Kyoung-Wan Seong-Jae
Shin Park Lee