Haynes and Boone, LLP
Method of patterning a film layer
A method of fabricating a semiconductor device is disclosed. The method includes forming a first patterned hard mask over a material layer. The first patterned hard mask defines an opening. The method also includes forming a direct-self-assembly (DSA) layer having a first portion and a second portion within the opening, removing the first portion of the DSA layer, forming spacers along sidewalls of the second portion of the DSA layer and removing the second portion of the DSA layer. The spacers form a second patterned hard mask over the material layer.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Joy Tsai-Sheng Ching-Yu Chun-Kuang Ru-Gun Chin-Hsiang Shih-Ming Ken-Hsien Kuan-Hsin Wei-Liang Kuei-Shun
Cheng Gau Chang Chen Liu Lin Chang Hsieh Lo Lin Chen