Light emitting diode with semiconductor layer having different resistance at different regions
A light emitting diode and a fabricating method thereof are provided. The method including the steps of sequentially forming a first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer with a first region and a second region on a substrate. Next, an ion implantation process is performed to make the resistance of the first region be larger than of the second region. Afterward, a first electrode is formed above the first region of the second-type semiconductor layer. Since the method uses the ion implantation process to make the inner resistance of the second-type semiconductor layer various, the light emitting intensity and efficiency may both be increased.
United Microelectronics Corporation
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H01L H01L H01L
inventional additional additional
Yu-Hsien
Chen