Haynes and Boone, LLP
Method for generating two dimensions for different implant energies
A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first hard mask layer over the substrate; patterning the first hard mask layer to form one or more first openings having a first critical dimension; performing a first implantation process on the substrate; forming a second hard mask layer over the first hard mask layer to form one or more second openings having a second critical dimension; and performing a second implantation process.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H H
H01L H01L H01L H01L
inventional inventional inventional inventional
Dun-Nian Jen-Cheng Wen-De Chun-Chieh Jeng-Shyan
Yaung Liu Wang Chuang Lin