Garg Law Firm, PLLC
Heterojunction diode having a narrow bandgap semiconductor
A semiconductor device is formed using an n-type layer of Zinc Oxide, a p-type layer formed of a narrow bandgap material. The narrow bandgap material uses a group 3A element and a group 5A element. A junction is formed between the n-type layer and the p-type layer, the junction being operable as a heterojunction diode having a rectifying property at a temperature range, the temperature range having a high limit at room temperature.
INTERNATIONAL BUSINESS MACHINES CORPORATION
H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional additional inventional additional inventional additional inventional additional additional additional additional inventional
Yun Seog Ning Yao Joel P. Devendra
Lee Li Yao De Souza Sadana