Morrison & Foerster LLP
Non-volatile semiconductor memory device in which read, write and erase operations can be simultaneously performed in different memory cell array blocks
 A non-volatile semiconductor memory device of the present invention includes a plurality of memory cell array blocks on a single integrated circuit. Each of the blocks includes non-volatile memory transistors capable of electrically writing, erasing, and reading information, the transistors being arranged in a matrix, and sources of all of the transistors being commonly connected; a plurality of word lines for commonly connecting control gates of the transistors in each identical row of the matrix; a plurality of bit lines for commonly connecting drains of the transistors in each identical column of the matrix; wherein the plurality of word lines of each of the blocks are respectively connected to the corresponding word lines in an adjacent block through a group of switching transistors provided between the blocks. 
Sharp Kabushiki Kaisha
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Masaru
Nawaki