Harrity Snyder, LLP
Interlayer dielectric for charge loss improvement
A method of manufacturing a memory device includes forming a first dielectric layer over a substrate and forming a charge storage element over the first dielectric layer. The method also includes forming a second dielectric layer over the charge storage element and forming a control gate over the second dielectric layer. The method further includes depositing an interlayer dielectric over the control gate at a high temperature.
Advanced Micro Devices, Inc. Spansion LLC
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Angela T. Pei-Yuan Wenmei Minh Van Ning Robert A.
Hui Gao Li Ngo Cheng Huertas