Infrared detecting element, method of manufacturing the same and temperature measuring device
To provide a thermopile infrared detecting element capable of accurate temperature measurement at low cost. An infrared detecting element 1 using a silicon nitride film as a first structure layer 22 constituting a structure of a membrane portion 4 is provided. Unlike silicon oxide, the first structure layer 22 has internal stress in the tensile direction, and can thus prevent the occurrence of bending. Also, diodes D1 and D2 can be formed in a silicon substrate 2 by using the first structure layer 22 as an element isolation region, and thus deformation of a thermopile 12 due to a change in the environment can be prevented to suppress measurement error of the thermopile 12. Furthermore, a high accuracy infrared detecting element capable of accurately detecting the temperature of cold junctions using the diodes D1 and D2 can be provided.
Seiko Epson Corporation
G
G01J
inventional
Hideto Shigemi Tsutomu
Yamashita Sato Hagihara