Lathrop & Gage LLP
Off-axis silicon carbide substrates
A method of epitaxial growth of a material on a crystalline substrate includes selecting a substrate having a crystal plane that includes a plurality of terraces with step risers that join adjacent terraces. Each terrace of the plurality or terraces presents a lattice constant that substantially matches a lattice constant of the material, and each step riser presents a step height and offset that is consistent with portions of the material nucleating on adjacent terraces being in substantial crystalline match at the step riser. The method also includes preparing a substrate by exposing the crystal plane; and epitaxially growing the material on the substrate such that the portions of the material nucleating on adjacent terraces merge into a single crystal lattice without defects at the step risers.
Kansas State University Research Foundation The University of Bristol State University of New York Stony Brook
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Hui Michael James Yu Yi Guan Martin
Chen Dudley Edgar Zhang Zhang Wang Kuball