Duane Morris LLP
Full range realignment ring oscillator
A realignment ring-cell circuit is disclosed. The circuit includes a single-to-differential unit, an OR gate, an AND gate, a first P-type metal-oxide-semiconductor transistor, and a first N-type metal-oxide-semiconductor transistor. The single-to-differential unit has an input configured to receive a realignment signal, a first output for outputting a first differential output and a second output for outputting a second differential output. The first output for outputting is a first input to the OR gate. The second output for outputting is a first input to the AND gate. A gate of the P-type metal-oxide-semiconductor transistor is electrically connected to an output of the OR gate. A gate of the N-type metal-oxide-semiconductor transistor is electrically connected to an output of the AND gate. A drain of the P-type metal-oxide-semiconductor transistor and a drain of the N-type metal-oxide-semiconductor transistor are electrically connected to each other and are further electrically connected to a second input of the OR gate and a second input of the AND gate.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Tsung-Hsien Ruey-Bin Chen-Hsiang Chih-Hsien
Tsai Sheen Hsieh Chang