Hauptman Ham, LLP
Semiconductor device having a double deep well and method of manufacturing same
A method of forming a semiconductor device includes patterning a first mask over a substrate defining a first opening. The substrate includes a first dopant type. The method includes implanting ions having a second dopant type through the first opening to form a first deep well. The method includes patterning a second mask over the substrate defining a second opening. The method includes implanting ions having the second dopant type through the second opening to form a second deep well, wherein an energy for implanting ions to form the second deep well is lower than an energy for implanting ions to form the first deep well. The method includes implanting ions having the first dopant type into the substrate to form a first well, wherein the energy for implanting ions to form the second deep well is greater than an energy for implanting ions to form the first well.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Hua-Chou Chien-Chih
Tseng Ho