High-breakdown voltage heterostructure field-effect transistor for high temperature operations
The invention relates to a high-breakdown voltage heterostructure field-effect transistor (FET), which can be used under a high temperature condition. The FET device from bottom upward in succession includes a semiconductor substrate, a buffer layer, a delta-doped sheet, an undoped layer, a sub-channel layer, an active channel layer, a gate layer, and an ohmic contact layer.
National Science Council
H
H01L
inventional
Wen-Lung Jung-Hui Kun-Wei Wen-Chau Kuo-Hui
Chang Tsai Lin Liu Yu