Haynes and Boone, LLP
Methods of fabricating a FinFET device with wrap-around silicide source/drain structure
The present disclosure provides a semiconductor device that includes a semiconductor fin disposed over a substrate; an isolation structure at least partially surrounding the fin; an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, wherein an extended portion of the epitaxial S/D feature extends over the isolation structure; and a silicide layer disposed on the epitaxial S/D feature, the silicide layer continuously surrounding the extended portion of the epitaxial S/D feature over the isolation structure.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Jui-Chien Chih-Chao Pei-Hsun Shih-Cheng Chun-Hsiung Chih-Hao Jung-Hung
Huang Chou Wang Chen Lin Wang Chang