Haynes and Boone, LLP
Long-range lithographic dose correction
A method of quantifying a lithographic proximity effect and determining a lithographic exposure dosage is disclosed. In an exemplary embodiment, the method for determining an exposure dosage comprises receiving a design database including a plurality of features intended to be formed on a workpiece. A target region of the design database is defined such that the target region includes a target feature. A region of the design database proximate to the target region is also defined. An approximation for the region is determined, where the approximation represents an exposed area within the region. A proximity effect of the region upon the target feature is determined based on the approximation for the region. A total proximity effect for the target feature is determined based on the determined proximity effect of the region upon the target feature.
Taiwan Semiconductor Manufacturing Company, Ltd.
G G
G03F G03F
inventional inventional
Cheng-Hung Shy-Jay Burn Jeng Jaw-Jung Wen-Chuan Pei-Yi
Chen Lin Lin Shin Wang Liu