McDermott Will & Emery LLP
Schottky barrier diode and method of manufacturing the same
A schottky barrier diode includes an n− type epitaxial layer disposed at a first surface of an n+ type silicon carbide substrate, a plurality of n type pillar areas disposed in the n− type epitaxial layer at a first portion of a first surface of the n+ type silicon carbide substrate, a plurality of p+ areas disposed at a surface of the n− type epitaxial layer and separated from the n type pillar area, a schottky electrode disposed on the n− type epitaxial layer and the p+ area, and an ohmic electrode disposed at a second surface of the n+ type silicon carbide substrate. A doping density of the n type pillar area is larger than a doping density of the n− type epitaxial layer.
HYUNDAI MOTOR COMPANY
H H Y H H
H01L H01L Y02E H01L H01L
inventional inventional additional inventional inventional
Dae Hwan Youngkyun Kyoung-Kook Jong Seok
Chun Jung Hong Lee