Structure and method for manufacturing device with ultra thin SOI at the tip of a V-shape channel
An SOI CMOS structure includes a v-shape trench in a pFet region. The v-shape trench has a surface in a (111) plane and extends into an SOI layer in the pFet region. A layer, such as a gate oxide or high-k material, is formed in the v-shape trench. Poly-Si is deposited on top of the layer.
International Business Machines Corporation
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Dan M. Wenjuan Mahender Huilong Ravikumar
Mocuta Zhu Kumar Zhu Ramachandran