Semiconductor device and fabricating method thereof
A semiconductor device includes a semiconductor substrate. The semiconductor substrate has a memory array region and a peripheral circuit region; a first active region and a second active region in the peripheral circuit region; a recessed gate disposed on the memory array region, comprising a first gate dielectric layer on the semiconductor substrate, wherein the first gate dielectric layer has a first thickness; and a second gate dielectric layer on the peripheral circuit region, wherein the second gate dielectric layer on the first active layer has a second thickness, and the second gate dielectric layer on the second active layer has a third thickness.
Nanya Technology Corporation
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H01L H01L
inventional inventional
Shian-Jyh Tse-Chuan Yu-Pi Shun-Fu Ming-Yuan Jar-Ming
Lin Kuo Lee Chen Huang Ho