Slater Matsil, LLP
Interconnect structure and method for forming the same
Interconnect structures and methods for forming the same are described. A method for forming an interconnect structure may include: forming a low-k dielectric layer over a substrate; forming an opening in the low-k dielectric layer; forming a conductor in the opening; forming a capping layer over the conductor; and forming an etch stop layer over the capping layer and the low-k dielectric layer, wherein the etch stop layer has a dielectric constant ranging from about 5.7 to about 6.8.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chia-Cheng Chih-Hung Kuang-Yuan Po-Cheng Joung-Wei
Chou Sun Hsu Shih Liou