Buchanan Ingersoll & Rooney PC
IGBT power device
Disclosed is an insulated gate bipolar transistor (IGBT) power device, including a bipolar transistor, a first MOS transistor, a second MOS transistor, a body diode and a body region contact diode. An anode of the body region contact diode and an anode of the body diode are connected to the bipolar transistor. A first gate of the first MOS transistor is externally connected to a gate voltage of the IGBT power device and configured to control turning on and off of the first MOS transistor by means of the gate voltage of the IGBT power device. A second gate of the second MOS transistor is connected to an emitter voltage of the IGBT power device and configured to control turning on and off of the second MOS transistor by means of the emitter voltage of the IGBT power device.
SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
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Lei Wei Rui Yi Yuanlin
Liu Liu Wang Gong Yuan