Method of manufacturing super channel TFT structure
 An FET thin film transistor is formed with a channel formed of a Si/Si.sub.1-x Ge.sub.x /Si three layer sandwich which serves as the carrier transfer channel. The percentage of germanium is preferably less than 30% and should be less than about 50%. The TFT can be structured as top gate, bottom gate or twin gate structure. The Si/Si.sub.1-x Ge/Si sandwich layer is processed in a continuous process under computer control. 
United Microelectronics Corporation
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Heng-Sheng Chun Y.
Huang Chang