Harness, Dickey & Pierce, P.L.C.
Semiconductor device
According to example embodiments, a semiconductor device includes a first layer and second layer. The first layer includes a nitride semiconductor doped with a first type dopant. The second layer is below the first layer and includes a high concentration layer. The high concentration layer includes the nitride semiconductor doped with the first type dopant and has a doping concentration higher than a doping concentration of the first layer.
Samsung Electronics Co., Ltd.
H H H H H H H
H01L H01L H01L H01L H01L H01L H01L
inventional additional inventional inventional additional inventional inventional
Young-jo Jun-youn Jae-won
Tak Kim Lee