Birch, Stewart, Kolasch & Birch, LLP
Structure and formation method of semiconductor device structure
Structures and formation methods of a semiconductor device structure are provided. A method for forming a semiconductor device structure includes patterning a semiconductor substrate to form a fin structure. The method also includes forming a sacrificial material over the fin structure. The method further includes forming spacer elements adjoining sidewalls of the sacrificial material. Furthermore, the method includes removing the sacrificial material so that a trench is formed between the spacer elements. The method also includes forming a gate dielectric layer in the trench. The method further includes forming a work function layer in the trench to cover the gate dielectric layer. In addition, the method includes depositing a tungsten bulk layer with a precursor to fill the trench. The precursor includes a tungsten-containing material that is substantially free of fluoride.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chung-Chiang Chia-Ching Ching-Hwanq Hsueh-Wen Chun-Yuan
Wu Lee Su Tsau Chou