Lee IP Law, PC
Method of manufacturing a variable resistance memory device
In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an etching chamber to form an MTJ structure. The substrate having the MTJ structure thereon is transferred to a deposition chamber through a transfer chamber. A protection layer covering a sidewall of the MTJ structure is formed in the deposition chamber. The etching chamber, the transfer chamber, and the deposition chamber are kept in a high vacuum state equal to or more than about 10−8 Torr.
Samsung Electronics Co., Ltd.
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Jung-Hwan Jung-Min Dong-Kyu Ju-Hyun Kyung-Il Se-Chung
Park Lee Lee Kim Hong Oh