Ward and Smith, P.A.
Semiconductor devices including fin bodies with varied epitaxial layers
A semiconductor device can include a substrate and a fin body that protrudes from a surface of the substrate. The fin body can include a lower portion having a first lattice structure and an upper portion, separated from the lower portion by a boundary, the upper portion having a second lattice structure that is different than the first lattice structure. An epitaxially grown epitxial layer can be on the lower and upper portions.
Samsung Electronics Co., Ltd.
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Sunjung Seunghun Hyunjung Dongwoo Bonyoung
Kim Lee Lee Kim Koo