Troutman Sanders LLP
Semiconductor device and method of manufacturing the same
A semiconductor device is provided. A multi-component high-k interface layer containing elements of the substrate is formed from an ultra-thin high-k dielectric material in a single-layer structure of atoms by rapid annealing in the manufacturing of a CMOS transistor by the replacement gate process, and a high-k gate dielectric layer with a higher dielectric constant and a metal gate layer are formed thereon. The EOT of the device is effectively decreased, and the diffusion of atoms in the high-k gate dielectric layer from an upper level thereof is effectively prevented by the optimized high-k interface layer at high-temperature treatment.
Institute of Microelectronics, Chinese Academy of Sciences
H H Y
H01L H01L Y10S
inventional inventional additional
Dapeng Wenwu Kai Xiaolei Shijie
Chen Wang Han Wang Chen