Roberts Calderon Safran & Cole, P.C.
Extreme ultraviolet (EUV) lithography mask
The present disclosure relates to semiconductor structures and, more particularly, to an extreme ultraviolet (EUV) lithography mask and methods of manufacture. The EUV mask structure includes: a reflective layer; a capping material on the reflective layer; a buffer layer on the capping layer; alternating absorber layers on the buffer layer; and a capping layer on the top of the alternating absorber layers.
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inventional inventional inventional
Genevieve Lei Yulu Obert R. Erik Francis
Beique Sun Chen Wood, II Verduijn Goodwin