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High electron mobility transistor having a boron nitride alloy interlayer and method of production
A semiconductor device includes a III-nitride buffer layer and a III-nitride barrier layer. A boron nitride alloy interlayer interposed between the III-nitride buffer layer and the III-nitride barrier layer. A portion of the III-nitride buffer layer includes a two-dimensional electron gas (2DEG) channel that is on a side of the III-nitride buffer layer adjacent to the boron nitride alloy interlayer.
KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
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Xiaohang
Li