Myers Bigel, P.A.
Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices
A power MOSFET includes a silicon carbide drift region having a first conductivity type, first and second well regions located in upper portions of the silicon carbide drift region that are doped with second conductivity dopants, and a channel region in a side portion of the first well region, an upper portion of the channel region having the first conductivity type, wherein a depth of the first well region is at least 1.5 microns and the depth of the first well region exceeds a distance between the first and second well regions.
Cree, Inc.
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Alexander V. Qingchun
Suvorov Zhang