Eschweiler & Potashnik, LLC
RRAM memory cell with multiple filaments
The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a conductive element disposed within a dielectric structure over the substrate. The conductive element has a top surface extend between outermost sidewalls of the conductive element. A first resistive random access memory (RRAM) element is arranged within the dielectric structure and has a first data storage layer directly contacting the top surface of the conductive element. A second RRAM element is arranged within the dielectric structure and has a second data storage layer directly contacting the top surface of the conductive element.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Wen-Ting Chin-Chieh Yu-Wen Chih-Yang
Chu Yang Liao Chang