Jianq Chyun IP Office
Magnetic random access memory
A magnetic random access memory (MRAM) including multiple memory cells for forming an array is provided. Each memory cell has a magnetic free stack layer and a pinned stack layer. A magnetization of the pinned stack layer is set toward a predetermined direction. The magnetic free stack layer has a magnetic easy axis. Two magnetic easy axes of adjacent two memory cells are substantially perpendicular to each other.
Industrial Technology Research Institute
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Yuan-Jen Ding-Yeong Chien-Chung
Lee Wang Hung