Alston & Bird LLP
Buried tri-gate fin vertical gate structure and method for making the same
The present application provides a buried tri-gate fin vertical gate structure. Which includes a transfer transistor on an epitaxial layer; a photodiode in the epitaxial layer at one side of the transfer transistor. A reset transistor on the epi-layer includes N+ regions at both sides of its gate, one of the N+ regions forms a floating diffusion node. The bottom of the fin vertical gate protrudes into the epitaxial layer with a number of vertical portions. Thus, increased surface areas enhance charge motion at the bottom, combining large-area transfer at an upper layer by the vertical gate and quick transfer at the bottom by the FINFET, thereby improving photo response.
SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION
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inventional inventional inventional inventional
Hua Zhi Haoyu Juanjuan
Shao Tian Chen Li