Muncy, Geissler, Olds & Lowe, P.C.
Compound semiconductor ESD protection devices
The present invention relates to compound semiconductor ESD protection devices using plural compound semiconductor E-FETs or compound semiconductor multi-gate E-FETs. The device comprises plural compound semiconductor E-FETs or multi-gate E-FETs, in which each of the gates is DC-connected to the source, drain, or an inter-gate region between two adjacent gates in the multi-gate E-FET through at least one first resistor, and at least one of the gates is AC-connected to the source, drain, or an inter-gate region between two adjacent gates in the multi-gate E-FET through a gate capacitor.
WIN Semiconductors Corp.
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Jung-Tao Shinichiro Chi-Wei Shih-Ming Joseph Cheng-Guan
Chung Takatani Wang Liu Yuan