Oblon, Spivak, McClelland, Maier & Neustadt
Method of chemically vapor depositing a thin film of GaAs
 Doped thin films of GaAs are chemically vapor deposited by depositing a high resistant buffer layer of GaAs on a GaAs substrate by gaseous reaction of a mixture of arsine gas and trimethylgallium in the gas phase over the substrate while the temperature of the substrate is maintained within the range of 600.degree.-700.degree. C., stopping the supply of trimethylgallium to the gas mixture undergoing reaction and increasing the temperature of the substrate to within the range of 700.degree.-800.degree. C., and then resuming the supply of trimethylgallium to and supplying hydrogen sulfide to the gas phase over the substrate at the stated temperature, thereby depositing a doped GaAs layer over the buffer layer on the substrate having a distribution of carrier density of less than 5%. 
The Furukawa Electric Co., Ltd.
Y C C
Y10S C30B C30B
additional inventional inventional
Seiji Hiroshi Yuzo Masakiyo
Kojima Kikuchi Kashiwayanagi Ikeda