Maschoff Brennan
Over-voltage protection circuit
A device is disclosed that includes a first transistor, a second transistor, and a first PODE device. The second transistor is electrically coupled to the first transistor. The first PODE device is adjacent to a drain/source region of the second transistor. A control end of the first PODE device is electrically coupled to a drain/source end of the second transistor.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Tien-Chien
Huang