Amin, Turocy & Watson, LLP
Resistive random-access memory
Techniques for fabricating a volatile memory structure having a transistor and a memory component is described. The volatile memory structure comprises the memory component formed on a substrate, wherein a first shape comprising one or more pointed edges is formed on a first surface of the memory component. The volatile memory structure further comprises transistor formed on the substrate and electrically coupled to the memory component to share operating voltage, wherein operating voltage applied to the transistor flows to the memory component.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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inventional inventional inventional inventional
Kangguo Peng Choonghyun Juntao
Cheng Xu Lee Li