Anova Law Group, PLLC
Semiconductor devices and fabrication methods thereof
A method for fabricating a semiconductor device includes providing a base substrate, forming a plurality of doped regions in the base substrate, forming an initial capping layer covering surfaces of the plurality of doped regions, forming a dielectric layer on the initial capping layer and the base substrate, forming a plurality of vias in the dielectric layer to expose a surface portion of the initial capping layer, and etching the exposed surface portion of the initial capping layer at a bottom of each via to form a silicide region exposed at the bottom of the via. The silicide region has a reduced thickness compared with a thickness of the initial capping layer. The method further includes forming a metal silicide layer by performing a self-aligned silicide process on an entire silicide region. The metal silicide layer is in contact with the plurality of doped regions.
Semiconductor Manufacturing International (Beijing) Corporation Semiconductor Manufacturing International (Shanghai) Corporation
H H H H H H H H H H H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional additional additional additional inventional inventional inventional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional additional inventional inventional additional additional inventional inventional
Yong
Li