Slater Matsil, LLP
Method for monitoring ion implantation
A method comprises placing a wafer and a ring-shaped beam profiler on a wafer holder, wherein the ring-shaped beam profiler is adjacent to the wafer, moving a first sensor and a second sensor simultaneously with the wafer holder, receiving a first sensed signal and a second sensed signal from the first sensor and the second sensor respectively and adjusting an ion beam generated by an ion beam generator based upon the first sensed signal and the second sensed signal.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chun-Lin Chin-Hsiang Nai-Han Chi-Ming Chih-Hong
Chang Lin Cheng Yang Hwang