Armstrong, Nikaido, Marmelstein, Kubovcik & Murray
Method of forming a high temperature stable ohmic contact to a III-V substrate
 An electrode structure of an electrode of a refractory metal or a silicide thereof on a layer of In.sub.x Ga.sub.1-x As (0<x<1) on a substrate of a III-V compound semiconductor is ohmic and is stable even at a high temperature, for example, 900.degree. C. This high temperature stable ohmic electrode structure allows ion implantation into the substrate with the electrode as a mask followed by annealing to form a doped region in alignment with the edge of the electrode. 
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Toshio Naoki Toshiro Toshio Kazuaki Akihiro
Oshima Yokoyama Futatsugi Fujii Ishii Shibatomi