Seed IP Law Group LLP
CMP slurry and CMP method
The current disclosure describes a metal surface chemical mechanical polishing technique. A complex agent or micelle is included in the metal CMP slurry. The complex agent bonds with the oxidizer contained in the CMP slurry to form a complex, e.g., a supramolecular assembly, with an oxidizer molecule in the core of the assembly and surrounded by the complex agent molecule(s). The formed complexes have an enlarged size.
Taiwan Semiconductor Manufacturing Co., Ltd.
C H H H
C09G H01L H01L H01L
inventional additional inventional inventional
Chia-Wei Chun-Wei Chi-Jen Chi-Hsiang Yang-Chun Liang-Guang Kei-Wei William Weilun
Ho Hsu Liu Shen Cheng Chen Chen Hong