Eschweiler & Potashnik, LLC
Increased optical path for long wavelength light by grating structure
Some aspects of the present disclosure relate to an image sensor that includes a semiconductor substrate having a frontside and a backside. A photodetector is arranged in the semiconductor substrate between the frontside and the backside. An interconnect structure is arranged beneath the frontside of the semiconductor substrate such that the frontside of the semiconductor substrate is arranged between the interconnect structure and the backside of the semiconductor substrate. A lower ring structure extends into the backside of the semiconductor substrate and laterally surrounds the photodetector. A grating structure, which is surrounded by the lower ring structure, extends from the backside of the substrate to a position within the photodetector.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Kuo-Cheng Yun-Wei Chun-Hao
Lee Cheng Chou