Pillsbury Winthrop LLP
Method for forming a storage electrode on a semiconductor device
The present invention provides a method for forming a storage electrode on a semiconductor substrate, and in particular to a storage electrode formation method which can prevent formation of a sharp upper edged cylindrical storage electrode, thereby improving a dielectric property and reliability of a capacitor.
Hyundai Electronics Industries, Co., Ltd.
H H
H01L H01L
inventional additional
Yu Chang Jeong Ho
Kim Kim