Fish & Richardson P.C.
Semiconductor device, manufacturing method thereof, and electronic device
The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.
Semiconductor Energy Laboratory Co., Ltd.
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Katsuaki Shunpei Shinya Ryota Jiro Tomoaki Motomu Hidekazu
Tochibayashi Yamazaki Sasagawa Hodo Nishida Moriwaka Kurata Miyairi