Programmable logic sensing in magnetic random access memory
A Magnetic Random Access Memory (MRAM) logic circuit includes read sensing circuitry having a first level corresponding to a first category of logic circuitry and a second logic level corresponding to a second category of logic circuitry. The logic circuitry may be switchable between circuitry having the first logic level and circuitry having the second logic level according to the category of the logic circuit being implemented.
QUALCOMM Incorporated
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Tae Hyun Xiaochun Wenqing Jung Pill Seung H.
Kim Zhu Wu Kim Kang