McDermott Will & Emery LP
Nitride based semiconductor device using nanorods and process for preparing the same
Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.
Samsung LED Co., Ltd.
H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Min Ho Sung Hwan Kyeong Ik Masayoshi Seong Suk
Kim Jang Min Koike Lee