Haynes and Boone, LLP
SRAM structure and method for forming the same
SRAM structures are provided. An SRAM structure includes a substrate, a P-type well region over the substrate, an N-type well region over the substrate, a PMOS transistor in the N-type well region, an NMOS transistor in the P-type well region, an isolation region over the boundary between the P-type well region and the N-type well region, and a dielectric structure formed in the isolation region and extending from the isolation region to the boundary between the P-type well region and the N-type well region. The depth of the dielectric structure is greater than that of the isolation region. The PMOS transistor is separated from the NMOS transistor by the isolation region.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H H H H H H
H01L H01L H01L H01L H01L H01L
inventional additional inventional additional inventional inventional
Chang-Yun Lien Jung Ming-Chang Kuo-Hsiu Jyun-Yu Wan-Yao Hung-Kai
Chang Hung Wen Hsu Tian Wu Chen