Haynes and Boone, LLP
Resistance variable memory structure and method of forming the same
A method includes forming a protection material over a conductive structure, an opening over the structure is partially filled with a first electrode material to form a first electrode; a resistance variable layer and a second electrode material are also formed in the opening. The second electrode material and the resistance variable layer are patterned to form a memory element. The method includes forming an interlayer dielectric over the memory element and the periphery region of the substrate and disposing contacts in the interlayer dielectric.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Yu-Wen Chih-Yang Chin-Chieh Wen-Ting Kuo-Chi Hsia-Wei
Liao Chang Yang Chu Tu Chen