Ryan, Mason & Lewis, LLP
Fin field-effect transistors with enhanced strain and reduced parasitic capacitance
A method of forming a semiconductor structure includes forming a substrate, the substrate having a first portion with a first height and second recessed portions with a second height less than the first height. The method also includes forming embedded source/drain regions disposed over top surfaces of the second recessed portions of the substrate, and forming one or more fins from a portion of the substrate disposed between the embedded source/drain regions, the one or more fins providing channels for fin field-effect transistors (FinFETs). The method further includes forming a gate stack disposed over the one or more fins, and forming inner oxide spacers disposed between the gate stack and the source/drain regions.
International Business Machines Corporation
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Shogo ChoongHyun Kangguo Juntao
Mochizuki Lee Cheng Li