McGinn & Gibb, PLLC
Dual gate material process for CMOS technologies
A method and structure for a method of manufacturing a device having different types of transistors, wherein gates of the different types of transistors in the device comprise different materials. The method comprises depositing a silicon layer on a gate dielectric layer, depositing a first-type gate material on the silicon layer, removing the first-type gate material from areas where a second-type gate is to be formed, depositing a second-type gate material on the silicon layer in areas where the first-type gate material was removed, and simultaneously patterning the first-type gate material and the second-type gate material into first-type and second-type gates, and anneal and transform the two types of gate materials.
International Business Machines Corporation
H
H01L
inventional
Andreas E. Jia
Grassmann Chen