Scully, Scott, Murphy & Presser, P.C.
Field effect device including inverted V shaped channel region and method for fabrication thereof
A semiconductor structure includes a semiconductor layer that includes an inverted V shaped channel region that allows avoidance of a raised source/drain region within the semiconductor structure. In one embodiment, a generally conventional gate electrode is located over a planar surface of the semiconductor layer over the inverted V shaped channel region. In another embodiment, the foregoing generally conventional gate electrode is used in conjunction with an inverted V shaped gate electrode that is located within an inverted V shaped notch that comprises the inverted V shaped channel region.
International Business Machines Corporation
H H
H01L H01L
inventional inventional
Wenjuan Christine Effendi Huilong Ravikumar Mahender
Zhu Norris Leobandung Zhu Ramachandran Kumar