TiN hard mask and etch residual removal
Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.
VERSUM MATERIALS US, LLC
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Madhukar Bhaskara Wen Dar Tianniu Rajiv Krishan William Jack Yi-Chia
Rao Liu Chen Agarwal Casteel, Jr. Lee