Lowe Hauptman Ham & Berner, LLP
Method of and apparatus for active energy assist baking
A method of and apparatus for forming interconnects on a substrate includes etching patterns in ultra-low k dielectric and removing moisture from the ultra-low k dielectric using active energy assist baking. During active energy assist baking, the ultra-low k dielectric is heated and exposed to light having only wavelengths greater than 400 nm for about 1 to about 20 minutes at a temperature of about 300 to about 400 degrees Celsius. The active energy assist baking is performed after wet-cleaning or after chemical mechanical polishing, or both.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Shwang-Ming Keng-Chu Joung-Wei Chung-Chi Mei-Ling Chia Cheng
Jeng Lin Liou Ko Chen Chou