Fitzpatrick, Cella, Harper & Scinto
Method for manufacturing a semiconductor photo-sensor
 In a method for manufacturing a semiconductor photo-sensor, an assembly including a photoelectric conversion element having a photoreceiving section, and a lead terminal having an inner lead connected to the photoelectric conversion element by a bonding wire is provided. A light transmitting member is also provided within the cavity spaced apart from the photoelectric conversion element and at a light-incident side of the photoelectric conversion element, the light transmitting member having an inner surface facing an upper surface of the photoelectric conversion element and an outer surface opposite the inner surface. The photoelectric conversion element, the inner lead and the bonding wire are sealed by introducing a light transmitting resin into the cavity so as to provide a relation l<2.multidot.(d.sub.1 +d.sub.2).multidot.tan.theta..sub.1, wherein l is a length of the photoreceiving section of the photoelectric conversion element, d.sub.1 is a thickness of the light transmitting resin above the upper surface of the photoelectric conversion element, d.sub.2 is a thickness of the light transmitting member, and .theta..sub.1 is a total reflection angle of the outer surface of the light transmitting member. 
Canon Kabushiki Kaisha
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inventional additional additional additional additional inventional
Ichiro Yasuo Toshiaki Tetsuo Hiromichi Akio Keiji Taichi
Ohnuki Suda Sato Yoshizawa Yamashita Mihara Ohtaka Sugimoto