Tung & Associates
Method for forming crack resistant planarizing layer within microelectronic fabrication
Within a method for forming a planarizing layer within a microelectronic fabrication, there is employed formed upon a partially photoexposed planarizing layer formed of a partially photoexposed negative photoresist material a sacrificial layer. Within the method, when sequentially: (1) stripping from the partially photoexposed planarizing layer the sacrificial layer; and (2) developing the partially photoexposed planarizing layer to form a developed planarizing layer, the developed planarizing layer is formed with enhanced planarity and diminished thickness.
Taiwan Semiconductor Manufacturing Co., Ltd.
G H H
G03F H01L H01L
inventional inventional inventional
Yu-Kung Fu-Tien Sheng Liang Chih-Kung Chin Chen Chung Sheng
Hsiao Wong Pan Chang Kuo Hsiung