Kilpatrick Townsend & Stockton LLP
Manufacturing method for dual work-function metal gates
A method for manufacturing a semiconductor device includes providing a semiconductor substrate, forming a high dielectric constant (high-k) gate dielectric layer on the semiconductor substrate, the high-k gate dielectric layer including a nitrided surface that has been subjected to a nitriding treatment or an oxidized surface that has been subjected to an oxidizing treatment, forming a metal gate on the nitrided surface of the high-k gate dielectric layer to form an NMOS transistor, or forming a metal gate on the oxidized surface of the high-k gate dielectric layer to form a PMOS transistor.
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
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Qingchun
Zhang