Toler Law Group, PC.
Non-volatile one-time programmable memory device
An apparatus includes a metal gate, a substrate material, and an oxide layer between the metal gate and the substrate material. The oxide layer includes a hafnium oxide layer contacting the metal gate and a silicon dioxide layer contacting the substrate material and contacting the hafnium oxide layer. The metal gate, the substrate material, and the oxide layer are included in a one-time programmable (OTP) memory device. The OTP memory device includes a transistor. A non-volatile state of the OTP memory device is based on a threshold voltage shift of the OTP memory device.
QUALCOMM Incorporated
G H H H H G H G G
G11C H01L H01L H01L H01L G11C H01L G11C G11C
inventional inventional inventional inventional inventional additional inventional additional additional
Xiao Zhongze Jeffrey Junhao Bin Xiaonan Jun Xia
Lu Wang Xu Yang Chen Yuan Li