Ingrassia Fisher & Lorenz, P.C.
Integrated circuits with relaxed silicon / germanium fins
Integrated circuits with relaxed silicon and germanium fins and methods for fabricating such integrated circuits are provided. The method includes a forming a crystalline silicon and germanium composite layer overlying a crystalline silicon substrate, where a composite layer crystal lattice is relaxed. A fin is formed in the composite layer, and a gate is formed overlying the fin. A portion of the fin is removed on opposite sides of the gate to form a drain cavity and a source cavity, and a source and a drain are formed in the source cavity and drain cavity, respectively.
GLOBALFOUNDRIES, INC.
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Amaury Andy Shao Ming Jin Ping
Gendron Wei Koh Liu