Hamre, Schumann, Mueller & Larson, P.C.
Solid power semiconductor field effect transistor structure
The present invention discloses a rugged power semiconductor field effect transistor structure, and through a special design, it solves the problem that the activation under a transient condition may result in failures on the device, so that there is no parasitic BJT, and thus the device is more rugged.
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Johnny Kin On Wai Yee Xianda
Sin Liu Zhou