Patterson & Sheridan, LLP
PECVD process
A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
APPLIED MATERIALS, INC.
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Todd Dmitriy Xinhai Bok Hoen Nagarajan Thomas Masaki Terrance Y. Ramprakash Sergey Amit Kumar Jeongmin Patrick Juan Carlos Michael Wenyoung Zhijun Ganesh Shahid Jianhua Jian J. Heung Lak Edward Mohamad A.
Egan Panasyuk Han Kim Rajagopalan Nowak Ogata Lee Sankarakrishnan Starik Bansal Lee Reilly Rocha-Alvarez Tsiang Jiang Balasubramanian Shaikh Zhou Chen Park Budiarto Ayoub