Tung & Associates
Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constant
A method for forming a capping layer for improved adhesion with an underlying insulating layer in a multiple layer semiconductor device manufacturing process including providing a semiconductor wafer including a process surface comprising a dielectric insulating layer; and, providing a capping layer overlying the dielectric insulating layer according to a chemical vapor deposition CVD) process. The capping layer of the present invention has improved adhesion and a reduced dielectric constant with comparable current leakage compared to capping layers of the prior art.
Taiwan Semiconductor Manufacturing Co., Ltd
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Shu-E Yung-Cheng Lih-Ping Yu-Huei Chung-Chi Lain-Jong
Ku Lu Li Chen Ko Li