Slater & Matsil, L.L.P.
MOM capacitors integrated with air-gaps
An integrated circuit structure combining air-gaps and metal-oxide-metal (MOM) capacitors is provided. The integrated circuit structure includes a semiconductor substrate; a first metallization layer over the semiconductor substrate; first metal features in the first metallization layer; a second metallization layer over the first metallization layer; second metal features in the second metallization layer, wherein the first and the second metal features are non-capacitor features; a MOM capacitor having an area in at least one of the first and the second metallization layers; and an air-gap in the first metallization layer and between the first metal features.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H
H01L H01L
additional inventional
Chia-Yi Ming-Shih David Ding-Chung Chung-Long
Chen Yeh Lu Chang