Myers Bigel, P.A.
Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same
Integrated circuit devices and methods of forming the same are provided. Integrated circuit devices may include a vertical field-effect transistor (VFET) that includes a bottom source/drain region in a substrate, a channel region on the bottom source/drain region, a top source/drain region on the channel region, and a gate structure on a side of the channel region. The channel region may have a cross-shaped upper surface.
Samsung Electronics Co., Ltd.
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Seung Hyun Seon Bae Young Chai
Song Kim Jung