Slater Matsil, LLP
Vertical gate all around (VGAA) devices and methods of manufacturing the same
Vertical gate all around (VGAA) devices and methods of manufacture thereof are described. A method for manufacturing a VGAA device includes: exposing a top surface and sidewalls of a first portion of a protrusion extending from a doped region, wherein a second portion of the protrusion is surrounded by a gate stack; and enlarging the first portion of the protrusion using an epitaxial growth process.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Ming-Shan Chih-Hao Chia-Hao Cheng-Long Chin-Chi Wai-Yi Chi-Wen
Shieh Wang Chang Chen Wang Lien Liu