Muncy, Geissler, Olds & Lowe, P.C.
Logic high-dielectric-constant (HK) metal-gate (MG) one-time-programming (OTP) memory device sensing method
In a one-time-programming (OTP) memory cell, dual-voltage sensing is utilized to determine whether the memory cell has experienced a non/soft breakdown or a hard breakdown. The drain current of the memory cell is read when the gate voltage is at a first predetermined voltage, and if the read drain current is greater than a predetermined current level, then a hard breakdown is detected. One or more additional readings of the current may be obtained to determine that a hard breakdown has occurred. If the read drain current is less than the predetermined current level, then a non/soft breakdown is detected. The threshold voltage of the memory cell may be shifted, and a second reading of the drain current may be obtained when the gate voltage is at a second predetermined voltage in case the memory cell experiences a non/soft breakdown.
QUALCOMM INCORPORATED
G G G
G11C G11C G11C
inventional inventional additional
Xia Xiaonan Xiao
Li Chen Lu