Renaissance IP Law Group LLP
Semiconductor device having magnetic tunnel junction structure and method of fabricating the same
A semiconductor device and a method of forming the semiconductor device are disclosed. The semiconductor device includes a lower electrode and a magnetic tunnel junction structure disposed on the lower electrode. The magnetic tunnel junction structure includes a seed pattern disposed on the lower electrode. The seed pattern includes an amorphous seed layer and an oxidized seed layer disposed on a surface of the amorphous seed layer. The seed pattern may prevent the lattice structure of the lower electrode from adversely affecting the lattice structure of a pinned magnetic layer of the magnetic tunnel junction structure.
Samsung Electronics Co., Ltd.
H H
H01L H01L
inventional inventional
Woochang Kiwoong Juhyun Sechung
Lim Kim Kim Oh