Hauptman Ham, LLP
Method of forming the gate electrode of field effect transistor
A method of fabricating a semiconductor device includes depositing a contact etch stop layer (CESL) over a dummy gate electrode, a source/drain (S/D) region and an isolation feature. The method further includes performing a first CMP to expose the dummy gate electrode. The method further includes removing an upper portion of the CESL. The method further includes performing a second CMP using a slurry different from the first CMP to expose the CESL over the S/D region, wherein, following the second CMP, an entire top surface of the CESL over the S/D region and over the isolation feature is substantially level with a top surface of the dummy gate electrode.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Chun-Wei Yi-An Clement Hsingjen Sey-Ping Neng-Kuo
Chang Lin Wann Sun Chen