Method of forming thin film poly silicon layer and method of forming thin film transistor
A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on a first surface of the substrate by a silicon thin film deposition process. A method of forming a thin film transistor includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on a first surface of the substrate by a silicon thin film deposition process. A first patterning process is performed on the thin film poly silicon layer to form a semiconductor pattern. Subsequently, a gate insulation layer, a gate electrode, a source electrode and a drain electrode are formed.
Wintek Corporation
H C H H H C C C C C H C C C H C H H C H H
H01L C23C H01L H01L H01L C23C C03C C23C C23C C23C H01L C23C C23C C03C H01L C30B H01L H01L C03C H01L H01L
inventional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional additional inventional inventional
Hieng-Hsiung Chin-Chang Heng-Yi Wen-Chun
Huang Liu Chang Wang