Technique for preparation of stoichiometric III-V compound semiconductor surfaces
 A technique for preparing stoichiometric group III-V compound semiconductor surfaces involves a repetitive anodizing and etching sequence in an aqueous solution of appropriate pH and a basic solution, respectively. Surfaces treated in the described manner evidence a correct surface stoichiometry and minimum carbon contamination. 
Bell Telephone Laboratories, Incorporated
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Chuan Chung Bertram Paul H.
Chang Schwartz Citrin