Foley & Lardner
Semiconductor device and manufacturing method thereof
 A semiconductor device capable of restraining a short channel effect and obtaining a current drivability that is as high as possible includes a semiconductor substrate, a gate insulating film formed on the surface of this substrate, a gate electrode formed on this gate insulating film and side wall insulating films formed on this gate electrode and along side walls of the gate insulating film. The semiconductor device further includes side wall conductor films formed adjacent to the side wall insulating films and a source/drain region formed in a surface region of the substrate under the side wall conductivity film and in a surface region, adjacent to the side wall conductivity film, of the semiconductor substrate. An impurity concentration in a depthwise direction of the substrate with the surface of the side wall conductor film serving as a starting point exhibits one maximum value in a predetermined depth but decreases in a portion deeper than the predetermined depth. 
Kabushiki Kaisha Toshiba
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Tatsuya Hisayo Takashi Masanobu Hiroshi Mizuki
Ohguro Momose Yoshitomi Saito Iwai Ono