Smith, Gambrell & Russell, LLP
Method for cleaning plasma treatment device and plasma treatment system
A method for use in a plasma treatment system that shortens the time required for the cleaning of a fluorine containing carbon film adheared in a vacuum vessel and protects the surface of a transfer table when the cleaning is carried out. After a CF film is deposited by, e.g., a plasma treatment system, the cleaning of the CF film adhered in a vacuum vessel 2 is carried out. In the cleaning, a plasma of O2 gas is produced, and the C&#8212;C and C&#8212;F bonds on the surface of the CF film are physically and chemically cut by the active species of O produced by the plasma. The O2 gas penetrates into the CF film at places where the C&#8212;C and C&#8212;F bonds have been cut, to react with C of the CF film to form CO2 which scatters. On the other hand, F scatters as F2. Thus, the CF film is removed.
Tokyo Electron Limited
C
C23C
inventional
Takashi Tadashi Shuichi Risa Masaki Yoko Masahide
Akahori Hirata Ishizuka Nakase Tozawa Naito Saito