Myers Bigel Sibley & Sajovec, PA
Non-volatile memory devices having a floating gate cap between a floating gate and a gate insulating layer
Provided are nonvolatile memory devices and a method of forming the same. A tunnel insulating pattern is provided on a substrate, and a floating gate is provided on the tunnel insulating pattern. A floating gate cap having a charge trap site is provided on the floating gate, and a gate dielectric pattern is provided on the floating gate cap. A control gate is provided on the gate dielectric pattern.
Samsung Electronics Co., Ltd.
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ByungKyu Kwang Soo Sunghoi Jaeduk Dohyun Jungdal Albert
Cho Seol Hur Lee Lee Choi Fayrushin