Mills & Onello LLP
Method for atomic layer deposition (ALD) of silicon oxide film
The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature and high deposition rate via the atomic layer deposition process using a Si2Cl6 source unlike a conventional atomic layer deposition process using a SiCl4 source. The atomic layer deposition apparatus used in the above process can be in-situ cleaned effectively at low temperature using a HF gas or a mixture gas of HF gas and gas containing —OH group.
Samsung Electronics Co., Ltd.
C C C C C C
C23C C23C C30B C23C C23C C30B
inventional inventional inventional inventional inventional inventional
Jung Soo Won Hyung Yong Il Cheol Ho Sang Tae Byoung Ha
Kim Lee Kim Shin Sim Cho