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Semiconductor device
A semiconductor device including a semiconductor substrate and an electrode formed from an alloy containing aluminum, silicon and titanium. The silicon content in the electrode is from 0.5 to 1.0% by weight relative to the total weight of the electrode, the titanium content in the electrode is from 0.8 to 3.0% by weight relative to the total weight of the electrode, and the thickness of the electrode is at least 1 μm.
TOYOTA JIDOSHA KABUSHIKI KAISHA
H H H B C C
H01L H01L H01L B22F C22C C22C
inventional inventional inventional additional inventional inventional
Masakazu Tsuyoshi Takashi
Okada Nishiwaki Ushijima