McDermott Will & Emery LLP
Method for fabricating a semiconductor device including a capacitance insulating film having a perovskite structure
A semiconductor device has a capacitance insulating film having a perovskite structure represented by the general formula ABO3 (where each of A and B is a metal element) and first and second electrodes opposed to each other with the capacitance insulating film interposed therebetween. The capacitance insulating film is formed such that the composition of the metal element A or B is higher in the region thereof adjacent the first electrode than in the other region thereof.
Matsushita Electric Industrial Co., Ltd.
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Akihiko Yoshihiro Yasutoshi Hisashi
Tsuzumitani Mori Okuno Ogawa