Harness, Dickey & Pierce, P.L.C.
Semiconductor device having glue layer and supporter
A plurality of metal patterns are disposed on a substrate. A support structure is provided between the plurality of metal patterns. The support structure has a supporter and a glue layer. Each of the plurality of metal patterns has a greater vertical length than a horizontal length on the substrate when viewed from a cross-sectional view. The supporter has a band gap energy of at least 4.5 eV. The glue layer is in contact with the plurality of metal patterns. The supporter and the glue layer are formed of different materials.
Samsung Electronics Co., Ltd.
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Wan-Don Beom-Seok Yong-Suk Geun-Kyu Kyu-Ho Seung-Hwan Oh-Seong
Kim Kim Tak Choi Cho Lee Kwon