Berger Singerman LLP
Thin film transistor substrate and manufacturing method thereof
A thin film transistor substrate and its manufacturing method are provided. The thin film transistor substrate avoids semiconductor defects caused by acid corrosion of a metal oxide channel during an etching process of forming a source/drain electrode, and effectively prevents copper from diffusing downward into the metal oxide channel under high temperature conditions. Such configuration eliminates a need to additionally use a barrier material, reduces production costs, and prevents short-circuiting resulting from a residual barrier material.
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
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Qianyi
Zhang