Lateral high breakdown voltage MOSFET and device provided therewith
A film thickness of a gate oxide film of a lateral high breakdown voltage MOSFET of a first conduction type is formed with a thickness in which an electric field value to an absolute maximum rated voltage between a source and a drain becomes equal to or less than 4 MV/cm, and a drain diffused layer is formed so that a total amount of impurities therein becomes equal to or more than 2&times;1012/cm2 to reduce an on-resistance of the lateral high breakdown voltage MOSFET while ensuing a breakdown voltage thereof, and to reduce an area of the lateral high breakdown voltage MOSFET.
Fuji Electric Co., Ltd.
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inventional additional additional inventional inventional
Gen Masaru
Tada Saito