F. Chau & Associates, LLP
Method for manufacturing capacitor of semiconductor device having improved leakage current characteristics
A method for manufacturing a capacitor of a semiconductor device is provided. The method includes the steps of: forming a first electrode on a semiconductor substrate; forming a dielectric layer on the first electrode; forming a second electrode on the dielectric layer; first annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under oxygen atmosphere; and second annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under vacuum.
Samsung Electronics, Co., LTD
H
H01L
inventional
Seung-hwan Sung-tae Han-mei Gab-jin Young-sun Jae-soon Ki-yeon Yun-jung
Lee Kim Choi Nam Kim Lim Park Lee