Fitzpatrick, Cella, Harper & Scinto
Silicon-based film and photovoltaic element
A silicon based film is provided which comprises a crystal phase formed on a substrate with a surface shape represented by a function f, wherein the silicon-based film is formed on a substrate with a surface shape having a standard deviation of an inclination arctan (df/dx) from 15&deg; to 55&deg; within the range of a sampling length dx from 20 nm to 100 nm. Raman scattering strength resulting from an amorphous component in the silicon-based film is not more than a Raman scattering strength resulting from a crystalline component. A difference between a spacing in a direction parallel to a principal surface of the substrate and a spacing of a single crystal silicon is within the range of 0.2% to 1.0% with regard to the spacing of the single crystal silicon.
Canon Kabushiki Kaisha
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H01L Y02P Y02E H01L H01L H01L Y02E H01L Y02E
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Takaharu Makoto Masafumi Koichi
Kondo Higashikawa Sano Matsuda