Slater Matsil, LLP
Isolation for semiconductor devices
A system and method for isolating semiconductor devices is provided. An embodiment comprises an isolation region that is laterally removed from source/drain regions of semiconductor devices and has a dielectric material extending over the isolation implant between the source/drain regions. The isolation region may be formed by forming an opening through a layer over the substrate, depositing a dielectric material along the sidewalls of the opening, implanting ions into the substrate after the deposition, and filling the opening with another dielectric material.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Wen-De Jen-Cheng Tzu-Hsuan Wen-I Dun-Nian Min-Feng
Wang Liu Hsu Hsu Yaung Kao