Essential Patents Group, LLP
Tunnel polarization junction III-N transistors
Techniques related to III-N transistors having improved performance, systems incorporating such transistors, and methods for forming them are discussed. Such transistors include first and second crystalline III-N material layers separated by an intervening layer other than a III-N material such that the first crystalline III-N material layer has a first crystal orientation that is inverted with respect to a second crystal orientation of the second crystalline III-N material layer.
Intel Corporation
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Sansaptak Marko Han Wui
Dasgupta Radosavljevic Then