Hoser, Patterson & Sheridan, NJ
Method of fabricating a gate structure of a field effect transistor using an alpha-carbon mask
A method of fabricating a gate structure of a field effect transistor comprising processes of forming an &agr;-carbon mask and plasma etching a gate electrode and a gate dielectric using the &agr;-carbon mask. In one embodiment, the gate dielectric comprises hafnium dioxide.
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Ajay Padmapani C. Guangxiang Wei
Kumar Nallan Jin Liu