McDermott, Will & Emery
Semiconductor device and a method of manufacturing thereof
A contact hole having an opening diameter smaller than the minimum dimension that can be formed by photolithographic technique is formed. Using an interlayer insulating film 8 formed on a semiconductor substrate as an etching mask, etching is carried out halfway to form an opening 8a. The etching mask is removed, and a TEOS film 10 is formed on the interlayer oxide film 8. The whole surface is then etched anisotropically to form a contact hole 11. 
Mitsubishi Denki Kabshiki Kaisha
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Moriaki Yoshinori Toshiaki Tatsuo Shinya Mitsuya
Akazawa Tanaka Ogawa Kasaoka Watanabe Kinoshita