Maschoff Brennan
Semiconductor device and method for manufacturing the same
A semiconductor device and a method for manufacturing a semiconductor device are provided. The semiconductor device includes a substrate, a gate stack, a gate spacer, a conductive feature, and a conductive cap. The substrate has a source/drain region. The gate stack is on the substrate. The gate spacer is alongside the gate stack. The conductive feature is on the source/drain region. The conductive cap is on the conductive feature and has a top in a position lower than a top of the gate spacer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chia-Hao Chih-Hao Yu-Ming Wei-Hao Jia-Chuan
Chang Wang Lin Wu You