Heslin Rothenberg Farley & Mesiti P.C.
Conformal nitridation of one or more fin-type transistor layers
Fin-type transistor fabrication methods and structures are provided having one or more nitrided conformal layers, to improve reliability of the semiconductor device. The method includes, for example, providing at least one material layer disposed, in part, conformally over a fin extending above a substrate, the material layer(s) including a gate dielectric layer; and performing a conformal nitridation process over an exposed surface of the material layer(s), the conformal nitridation process forming an exposed, conformal nitrided surface.
GLOBALFOUNDRIES INC.
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Tien-Ying Jin Ping Yan Ping Haiting Wei Hua Jun Seung Min-hwa Haoran Feng
Luo Liu Shen Wang Tong Lian Kim Chi Shi Zhou