J.C. Patents
Method of fabricating semiconductor device structure
A method of fabricating a semiconductor device structure is provided. The method includes the following step. A gate dielectric layer is formed on a substrate. A gate electrode is on the gate dielectric layer. The gate dielectric layer exposed by the gate electrode is treated. A first etching process is performed to remove at least a portion of the gate dielectric layer exposed by the gate electrode. A spacer is formed on the sidewall of the gate electrode. A second etching process is performed to form recesses in the substrate beside the gate electrode. Besides, during the first etching process and the second etching process, an etching rate of the treated gate dielectric layer is greater than an etching rate of the untreated gate dielectric layer.
United Microelectronics Corp.
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Chung-Fu Ssu-I Chien-Ting Yen-Liang Yu-Hsiang Shih-Fang
Chang Fu Lin Wu Hung Tzou