J.C. Patents
Method of controlling implant dosage and pressure compensation factor in-situ
A method of controlling the implant dosage is provided. First, the residual gases within an ion implant station are analyzed and the partial pressure of each residual gas is measured. Thereafter, the current Im of the ion beam is measured and the real dosage Ir of the ion beam implanted into a wafer is calculated. Since all the residual gases in the ion implant station are considered, the implanting dosage can be accurately controlled.
ProMOS Technologies Inc.
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Heng-Kai Yu-Chi
Hsu Chen