Sughrue Mion, PLLC
Insulating film material containing organic silane or organic siloxane compound, method for producing same, and semiconductor device
A material for insulating film suitable as an interlayer insulating material for a semiconductor device, from which an insulating film is formed by chemical vapor deposition, and an insulating film formed from such a material and a semiconductor device employing an insulating film, are provided.A material for insulating film comprising an organosilicon compound which is one of an organosilane compound in which a secondary hydrocarbon group and an alkenyl group, or an alkenyl group, is directly bonded to a silicon atom, or an organosiloxane compound in which a secondary hydrocarbon group and/or an alkenyl group is directly bonded to a silicon atom, represented by the formulae (1) to (4), from which an insulating film is formed by chemical vapor deposition of the organosilicon compound:
Tosoh Corporation
B C C H H C H H H H H C
B05D C07F C23C H01L H01L C07F H01L H01L H01L H01L H01L C07F
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Daiji Keisuke
Hara Yoshida