Brinks Hofer Gilson & Lione
Exchange coupling film and magnetoresistance effect type element using this exchange coupling film, and thin film magnetic head using the magnetoresistance effect type element
The antiferromagnetic layer 4 is formed of the X&#8212;Mn alloy (X is an platinum group element) and the interface structure of with the pinned magnetic layer 3 is made to be non-coherent by properly adjusting the composition ratio of X. Consequently, the crystal structure of the antiferromagnetic layer 4 is transformed so as to obtain a large exchange anisotropic magnetic field by subjecting the layer to a heat treatment, making it possible to improve the reproduction characteristic over the conventional art.
Alps Electric Co., Ltd.
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B82Y G11B G01R H01F Y10T Y10S H01L H01F G11B G11B B82Y
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Yutaka Naoya Masamichi Akihiro Kazuya
Yamamoto Hasegawa Saito Makino Oominato