Hoffman Warnick LLC
Methods for forming high performance gates and structures thereof
Methods for forming high performance gates in MOSFETs and structures thereof are disclosed. One embodiment includes a method including providing a substrate including a first short channel active region, a second short channel active region and a long channel active region, each active region separated from another by a shallow trench isolation (STI); and forming a field effect transistor (FET) with a polysilicon gate over the long channel active region, a first dual metal gate FET having a first work function adjusting material over the first short channel active region and a second dual metal gate FET having a second work function adjusting material over the second short channel active region, wherein the first and second work function adjusting materials are different.
International Business Machines Corporation
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inventional inventional inventional
Brian J. Huilong Mahender Bachir Jay W. Xiaomeng Gregory G.
Greene Zhu Kumar Dirahoui Strane Chen Freeman