Lowe Hauptman Ham & Berner LLP
Semiconductor device and method of fabricating the same
In a method of fabricating a semiconductor device on a substrate having a pillar pattern, a gate electrode is formed on the pillar pattern without etching the latter. A conductive pattern is filled between adjacent pillar patterns, a spacer is formed above the conductive pattern and surrounding sidewalls of each pillar pattern, and the gate electrode is formed by etching the conductive pattern using the spacer as an etch barrier.
Hynix Semiconductor Inc.
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Chun-Hee Sang-Hoon Young-Kyun Yun-Seok
Lee Park Jung Cho