Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device
Etching compositions suitable for the selective removal of silicon over silicon-germanium from a microelectronic device comprising: water; at least one of a quaternary ammonium hydroxide compound and an amine compound; water-miscible solvent; optionally surfactant and optionally corrosion inhibitor; and the method of using the etching composition for the selective removal.
Versum Materials US, LLC
H H H H H H H H H C H C
H01L H01L H01L H01L H01L H01L H01L H01L H01L C09K H01L C09K
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Andrew J. Yi-Chia Wen Dar
Adamczyk Lee Liu