Antonelli, Terry, Stout & Kraus, LLP
Gate circuit and semiconductor circuit to process low amplitude signals, memory, processor and information processing system manufactured by use of them
A semiconductor integrated circuit device, responsive to an input signal having a low amplitude and short transition time, operates with low power consumption and prevents the flow of breakthrough current. In an example circuit thereof, the input signal is transmitted through an NMOS pass transistor to the gate of a first NMOS transistor and is applied, through a second NMOS transistor, to the gate of a first PMOS transistor, the first PMOS transistor performing complementary operation with the first NMOS transistor through the second NMOS transistor; the gate of the first PMOS transistor is connected to the power supply potential through the second PMOS transistor; the gate of the second NMOS transistor is connected to the power supply potential; and the gate of the second PMOS transistor is controlled by the signal at a common drain connection of the first NMOS and first PMOS transistors.
Hitachi, Ltd. Hitachi Engineering Co., Ltd.
H H
H03K H03K
inventional inventional
Katsunori Tatsumi Kayoko Kosaku Hiromichi Hideo Yoji Fumio
Koike Yamauchi Nemoto Hirose Yamada Hara Nishio Murabayashi