F. Chau & Associates, LLC
Semiconductor device having metal plug and method of forming the same
Provided is a semiconductor device including first, second and third source/drain regions. A first conductive plug in contact with the first source/drain regions, having a first width and a first height, and including a first material is provided. An interlayer insulating layer covering the first conductive plug and the substrate is disposed. A second conductive plug vertically penetrating the interlayer insulating layer to be in contact with the second source/drain regions, having a second width and a second height, and including a second material is provided. A third conductive plug vertically penetrating the interlayer insulating layer to be in contact with the third source/drain regions, having a third width and a third height, and including a third material is disposed. The second material includes a noble metal, a noble metal oxide or a perovskite-based conductive oxide.
Samsung Electronics Co., Ltd.
H H
H01L H01L
inventional inventional
Ji-Eun Beom-Seok Geun-Kyu Oh-Seong Seung-Hwan Wan-Don Yong-Suk Kyu-Ho
Lim Kim Choi Kwon Lee Kim Tak Cho