Slater Matsil, LLP
Ferroelectric tunnel junction with internal gate
A device includes a bottom electrode that includes a first electrically conducive material; a dielectric layer over the bottom electrode; an internal metal layer over the dielectric layer; a ferroelectric layer over the internal metal layer; and a top electrode over the ferroelectric layer, the top electrode including a second electrically conductive material, an area of the top electrode being smaller than an area of the internal metal layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H
H01L H01L
inventional inventional
Chih-Sheng
Chang