K & L Gates LLP
Crossbar diode-switched magnetoresistive random access memory system
A magnetic memory or MRAM memory system comprising an M×N crossbar array of MRAM cells. Each memory cell stores binary data bits with switchable magnetoresistive tunnel junctions (MJT) where the electrical conductance changes as the magnetic moment of one electrode (the storage layer) in the MJT switches direction. The switching of the magnetic moment is assisted by a phase transition interlayer that transitions from antiferromagnetic to ferromagnetic at a well defined, above ambient temperature.
Carnegie Mellon University
H G H G
H01L G11C H01L G11C
inventional inventional inventional inventional
Jian-Gang Yi Xin
Zhu Luo Li