Slater & Matsil, L.L.P.
Double patterning technology using single-patterning-spacer-technique
A method of forming an integrated circuit structure includes forming a first and a second plurality of tracks parallel to a first direction and on a wafer representation. The first and the second plurality of tracks are allocated in an alternating pattern. A first plurality of patterns is laid out on the first plurality of tracks and not on the second plurality of tracks. A second plurality of patterns is laid out on the second plurality of tracks and not on the first plurality of tracks. The first plurality of patterns is extended in the first direction and in a second direction perpendicular to the first direction, so that each of the second plurality of patterns is surrounded by portions of the first plurality of patterns, and substantially none of neighboring ones of the first plurality of patterns on the wafer representation have spacings greater than a pre-determined spacing.
Taiwan Semiconductor Manufacturing Company, Ltd.
H
H01L
inventional
Yuan-Te Fang-Yu Huang-Yu Ken-Hsien Tsong-Hua Ming-Feng Lee-Chung Ru-Gun
Hou Fan Chen Hsieh Ou Shieh Lu Liu