Birch, Stewart, Kolasch & Birch, LLP
Semiconductor structure, high electron mobility transistor, and method for fabricating semiconductor structure
A semiconductor structure, a high electron mobility transistor (HEMT), and a method for fabricating a semiconductor structure are provided. The semiconductor structure includes a substrate, a flowable dielectric material pad layer, a reflow protection layer, and a GaN-based semiconductor layer. The substrate has a pit exposed from a top surface of the substrate. The flowable dielectric material pad layer is formed in the pit, and a top surface of the flowable dielectric material pad layer is below the top surface of the substrate. The reflow protection layer is formed on the substrate and the top surface of the flowable dielectric material pad layer. The GaN-based semiconductor layer is disposed over the substrate.
Vanguard International Semiconductor Corporation
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Yung-Fong Cheng-Tao
Lin Chou