Volentine & Whitt, PLLC.
Transistors for semiconductor device and methods of fabricating the same
The present invention discloses a transistor for a semiconductor device capable of preventing the generation of a depletion capacitance in a gate pattern due to the diffusion of impurity ions. The present invention also discloses a method of fabricating the transistor.
Samsung Electronics Co, Ltd.
H H H H H H H
H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional
Ho Tetsuji Hwa-Sung Moon-Han Seung-Hwan Hyun-Suk Jae-Yoon
Lee Ueno Rhee Park Lee Kim Yoo