Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Magnetoresistance effect element and magnetoresistance device
 In a magnetoresistance effect element, a pinning layer (antiferromagnetic layer) has a composition of Ru--Mn or Ru--M--Mn where M represents at least one selected from Rh, Pt, Pd, Au, Ag, and Re, and impurity concentrations of the pinning layer are regulated. Accordingly, there can be provided the magnetoresistance effect element having a magnetic multilayered film which is excellent in corrosion resistance, thermal stability and magnetic field sensitivity and has a large MR change ratio, as well as a magnetoresistance device, such as a magnetoresistance effect type head or the like, using such a magnetoresistance effect element. 
TDK Corporation
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H01L G11B Y10S G11B B82Y Y10T B82Y
inventional additional additional additional inventional additional inventional
Yasuyuki Masashi Satoru Eiichi
Yamamoto Sano Araki Omata