Haynes and Boone, LLP
Immersion lithography edge bead removal
A method of performing immersion lithography on a semiconductor wafer is provided. The method includes providing a layer of resist onto a surface of the semiconductor wafer. Next, an edge-bead removal process spins the wafer at a speed greater than 1000 revolutions per minute and dispenses solvent through a nozzle while the wafer is spinning. Then, the resist layer is exposed using an immersion lithography exposure system.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Ching-Yu Vincent C. C.
Chang Yu Ke