Baker & McKenzie LLP
Decreasing metal-silicide oxidation during wafer queue time
Disclosed herein are various embodiments of semiconductor devices and related methods of manufacturing a semiconductor device. In one embodiment, a method includes providing a semiconductor substrate and forming a metal silicide on the semiconductor substrate. In addition, the method includes treating an exposed surface of the metal silicide with a hydrogen/nitrogen-containing compound to form a treated layer on the exposed surface, where the composition of the treated layer hinders oxidation of the exposed surface. The method may then further include depositing a dielectric layer over the treated layer and the exposed surface of the metal silicide.
Taiwan Semiconductor Manufacturing Company, Ltd.
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inventional inventional inventional
Shwang-Ming Yu-Lien Zhen-Cheng Cheng-Hung
Cheng Huang Wu Chang