McClure, Qualey & Rodack, LLP
Semiconductor device and manufacturing method thereof
A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor fin, a first gate stack, and a first metal element-containing dielectric mask. The semiconductor fin protrudes from the substrate. The first gate stack is over the semiconductor fin. The first metal element-containing dielectric mask is over the first gate stack.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional additional inventional inventional inventional inventional inventional inventional
Ching Chih-Hao Yu-Ming Jia-Chuan Chia-Hao Wai-Yi Gwan-Sin
Hsueh Wang Lin You Chang Lien Chang