Slater Matsil, LLP
Fin structure of semiconductor device
The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising an upper portion comprising a first semiconductor material having a first lattice constant, wherein the upper portion comprises a first substantially vertical portion having a first width and a second substantially vertical portion having a second width less than the first width over the first substantially vertical portion; and a lower portion comprising a second semiconductor material having a second lattice constant less than the first lattice constant, wherein a top surface of the lower portion has a third width less than the first width; and a gate structure covering the second substantially vertical portion.
Taiwan Semiconductor Manufacturing Company
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Ling-Yen Chi-Yuan Clement Hsingjen Hung-Yao Yen-Yu
Yeh Shih Wann Chen Chen