Fitzpatrick, Cella, Harper & Scinto
Method of dry etching oxide semiconductor film
Provided is a dry etching method for an oxide semiconductor film containing at least In, Ga, and Zn, which includes etching an oxide semiconductor film in a gas atmosphere containing a halogen-based gas.
Canon Kabushiki Kaisha
H H H Y
H01L H01L H01L Y02E
inventional inventional inventional additional
Chienliu
Chang