Morrison & Foerster LLP
Manufacturing method of semiconductor device
A first glass substrate is bonded through a resin to a top surface of a semiconductor wafer on which a first wiring is formed. A second glass substrate is bonded to a back surface of the semiconductor wafer through a resin. A V-shaped groove is formed by notching from a surface of the second glass substrate through a part of the first glass substrate. A second wiring connected with the first wiring and extending to the surface of the second glass substrate is formed. A protection film composed of an organic resin and a photoresist layer to provide the protection film with an opening are formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the second glass substrate by spray coating.
Sanyo Electric Co., Ltd.
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Yukihiro Koichi Hiroyuki Yoshinori Akira Hiroshi Takashi
Takao Kuhara Shinogi Seki Suzuki Yamada Noma