Onello & Mello LLP
Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices
A memory device is comprised of a magnetic structure that stores information in a plurality of domains of the magnetic structure. A write unit writes information to at least one of the plurality of domains of the magnetic structure by applying a write current to the magnetic structure in response to a control signal. A read unit reads information from at least one of the plurality of domains of the magnetic structure by applying a read current to the magnetic structure in response to the control signal. A domain wall movement control unit is coupled to a portion of the magnetic structure and moves information stored in the plurality of domains in the magnetic structure to other domains in the magnetic structure in response to the control signal. The write unit, the read unit and the domain wall movement control unit are all coupled to the same control signal line that provides the control signal.
Samsung Electronics Co., Ltd.
G G
G11C G11C
inventional inventional
Jong-wan Young-pil Chul-woo Sang-beom Sung-chul Ho-jung Hyun-ho
Kim Kim Park Kang Lee Kim Choi