Maschoff Brennan
Semiconductor device and fabricating method thereof
A method of fabricating a semiconductor device includes forming a fin structure on a substrate, forming a channel layer on a sidewall and a top surface of the fin structure, and forming a gate stack over the channel layer. The channel layer includes a two-dimensional (2D) material. The gate stack includes a ferroelectric layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional additional inventional inventional additional inventional inventional inventional inventional inventional inventional additional inventional additional additional inventional additional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional additional additional inventional additional inventional inventional inventional additional inventional inventional inventional
Tung-Ying Chih-Sheng Carlos H. Ling-Yen Meng-Hsuan Chun-Chieh
Lee Chang Diaz Yeh Hsiao Lu