Antonelli, Terry & Wands
Insulated gate type field effect semiconductor device and a circuit employing the device
 An insulated gate type field effect transistor for high power which has a low conductivity region surrounding a drain region and an offset gate region having a further lower conductivity adjoined thereto, wherein the length and impurity concentration are designed according to the electric characteristics of the transistor. A combination of P channel and N channel type transistors having substantially the same electric characteristics and an audio amplifying circuit using the combination are also disclosed. 
Hitachi, Ltd.
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Isao Masaru Minoru Hidefumi Takeaki Shikayuki Masatomo
Yoshida Takeuchi Nagata Ito Okabe Ochi Furumi