Smith, Gambrell & Russell Beveridge, DeGrandi, Weilacher & Young Intellectual Property Group
Method for simultaneously forming local interconnect with silicided elevated source/drain MOSFET's
 A method for formation of both local innerconnection and silicidation of source/drain transistors using the deposition of a blanket silicon layer over the entire top surface of the transistors and selectively stripping of unwanted portions of the silicon layer is disclosed. The method includes the step of applying a photoresist mask to map out where the local interconnection and source/drain are to be located. The final recited step is to deposit a thin metal layer to provide for the silicidation to complete the transistor. The silicon layer that is deposited has a thickness of 20 to 300 millimeters, and the thin metal layer is either cobalt or titanium having a thickness of 10 millimeters to 100 millimeters. 
National Science Council
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H01L H01L H01L
inventional inventional inventional
Tiao-yuan
Huang