Marshall, Gerstein & Borun LLP
Method of manufacturing a semiconductor device
Disclosed is a method of manufacturing a semiconductor device. A gate electrode, which was formed through existing mask and etch processes, is formed by forming an oxide film protrusion on a field oxide film and forming the gate electrode between the oxide film protrusions. It is thus possible to minimize the critical dimension of the device, easily adjust the size of the device and form a uniform gate electrode over the wafer.
Hynix Semiconductor Inc.
H H
H01L H01L
inventional inventional
Jum Soo Jung Ryul
Kim Ahn