Pennie & Edmonds LLP
Semiconductor memory device
 The present invention relates to semiconductor memory device and more particularly, to a technique for stabilizing the potential of the cell plate line by using two kinds of potentials for the cell plate line driver to implement the powerful driving force and rapid operability required in case of designing the RAM using as the memory device the material having large electrostatic capacity, and for preventing the loss of I/O by using CMOS transistors in the decoder circuit which receives the cell plate line voltage by cooperating with the cell plate line driver circuit and feeds back the cell plate line voltage. 
Hyundai Electronics Industries Co., Ltd.
G G
G11C G11C
inventional inventional
Seung Hyun Jae Whan
Yi Kim