Jones Day
Semiconductor device, method for forming contact and method for etching continuous recess
A method for forming a contact is provided. The method includes: forming a first dielectric layer over a substrate; forming a second dielectric layer over the first dielectric layer; patterning the second dielectric layer to form a first recess; patterning the first dielectric layer by a first etchant through the first recess to form a second recess, wherein the first etchant has a higher etching rate with respect to the first dielectric layer than with respect to the second dielectric layer and further wherein the second recess is aligned with the first recess; and forming a continuous contact plug in the first recess and the second recess.
Taiwan Semiconductor Manufacturing Company Limited
H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional additional inventional additional inventional additional inventional additional
Yi-Chun Yun-Hua
Huang Chen