Wenderoth, Lind & Ponack, L.L.P.
Method for cleaning wafer
A method for cleaning a wafer that has a pattern of recessed and projected portions formed on a surface thereof and contains at least one element selected from titanium, tungsten, aluminum, copper, tin, tantalum, and ruthenium on a surface of a recessed portion of the pattern. The method at least includes a pre-treating step of holding a cleaning liquid at least in the recessed portion of the pattern; a protective film forming step of holding a protective film forming chemical liquid, which is a chemical liquid containing a water-repellant protective film forming agent, at least in the recessed portion of the pattern after the pre-treating step; and a drying step of removing the liquids from the pattern by drying. The cleaning liquid is acidic if the protective film forming chemical liquid is basic, or is basic if the protective film forming chemical liquid is acidic.
CENTRAL GLASS COMPANY, LIMITED
C C C C C H B C C C
C11D C11D C11D C11D C07F H01L B08B C11D C11D C11D
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Soichi Takashi Masanori Shinobu
Kumon Saio Saito Arata