Lee & Morse, P.C.
SONOS memory device using an amorphous memory node material
A SONOS memory device, and a method of manufacturing the same, includes a substrate and a multifunctional device formed on the substrate. The multifunctional device performs both switching and data storing functions. The multifunctional device includes first and second impurities areas, a channel formed between the first and second impurities areas, and a stacked material formed on the channel for data storage. The stacked material for data storage is formed by sequentially stacking a tunneling oxide layer, a memory node layer in which data is stored, a blocking layer, and an electrode layer.
Samsung Electronics Co., Ltd.
H
H01L
inventional
Chung-woo Sang-hun Soo-doo Ju-hyung
Kim Jeon Chae Kim