Lee & Morse, P.C.
Channel precharge and program methods of a nonvolatile memory device
A channel pre-charge method of a nonvolatile memory device including a cell string includes pre-charging a channel of the cell string according to a first word line bias condition and pre-charging the channel of the cell string according to a second word line bias condition, different than the first word line bias condition.
Samsung Electronics Co., Ltd.
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ByungKyu Kwang Soo Jungdal Sunghoi
Cho Seol Choi Hur