Birch, Stewart, Kolasch & Birch, LLP
Semiconductor device with roughened surface increasing external quantum efficiency
The present invention provides a semiconductor device with a roughened surface that increases external quantum efficiency thereof. Roughening of the semiconductor device surface is done by epitaxial growth techniques that may include hydride vapor phase epitaxy (HVPE) technique, organometallic vapor phase epitaxy (OMVPE) technique, or molecular beam epitaxy (MBE) technique.
United Epitaxy Company, Ltd.
H H
H01L H01L
inventional additional
Chung-Ying Tzong-Liang Chih-Sung
Chang Tsai Chang