IP & T Group LLP
Memory device and method of operating the same
Provided herein is a memory device and a method of operating the same. The memory device may include a string having a plurality of memory cells in which data is stored, and a page buffer coupled to the string through a bit line and configured to precharge the bit line, or sense voltage or current of the bit line. The page buffer may include a first switch configured to transfer the voltage of the bit line to a common sensing node in response to a page buffer sensing signal, a second switch configured to transfer a supply voltage to the common sensing node in response to a common sensing signal, and a third switch configured to couple the common sensing node to a latch in response to a sensing signal and adjust voltage of the common sensing node depending on a voltage level of the sensing signal.
SK hynix Inc.
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Hyung Jin
Choi