Patterson + Sheridan, LLP
Epitaxial growth systems
Disclosed is about an epitaxial growth system, including an epitaxial growth reactor chamber, a susceptor including a supporting surface and disposed in the epitaxial growth reactor chamber, and a plurality of wafer fixing elements disposed on the supporting surface. The supporting surface of the susceptor includes a rim, and each of the wafer fixing elements includes a boundary. At least three first heating elements are disposed under the susceptor and arranged in parallel to the supporting surface.
EPISTAR CORPORATION
C C C C
C30B C23C C30B C23C
inventional inventional inventional inventional
Chung-Ying Tzu-Ching
Chang Yang