Method of manufacturing a semiconductor device with a bipolar transistor
 The invention relates to the manufacture of a so-called differential bipolar transistor comprising a base (1A), an emitter (2) and a collector (3), the base (1A) being formed by applying a doped semiconducting layer (1) which locally borders on a monocrystalline part (3) of the semiconductor body (10) where it forms the (monocrystalline) base (1A), and which semiconducting layer (1) borders, outside said monocrystalline part, on a non-monocrystalline part (4, 8) of the semiconductor body (10) where it forms a (non-monocrystalline) connecting region (1B) of the base (1A). The non-monocrystalline part (4, 8) of the semiconductor body (10) is obtained by covering the semiconductor body (10) with a mask (20) and replacing on either side thereof a part (8) of the semiconductor body (10) by an electrically insulating region (8) and by providing this, prior to the application of the semiconducting layer (1) with a polycrystalline semiconducting layer (4). The known method, in which an aperture is etched above the collector (3) after deposition of the polycrystalline layer (4), is relatively laborious. In a method in accordance with the invention, the polycrystalline layer (4) is selectively provided on the electrically insulating region (8), in which process use is made of the mask (20) to form the electrically insulating region (8). This method is less laborious than the known method. In addition, the resultant transistors have excellent properties and their dimensions may be very small. Preferably, both in the manufacture of the insulating region (8), preferably an oxide-filled groove (8), and in the process of selectively applying the polycrystalline layer (4) to the insulating region, use is made of a deposition step followed by a chemico-mechanical polishing step. 
U.S. Philips Corporation
H H
H01L H01L
inventional inventional
Catharina H. H. Doede
Emons Terpstra