Slater & Matsil, L.L.P.
Fully depleted SOI multiple threshold voltage application
An integrated circuit comprises a substrate and a buried dielectric formed in the substrate. The buried dielectric has a first thickness in a first region, a second buried dielectric thickness in a second region, and a step between the first and second regions. A semiconductor layer overlies the buried dielectric.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Hao-Yu Chang-Yun Fu-Liang Di-Hong
Chen Chang Yang Lee