Use of a metal contact structure to increase control gate coupling capacitance for a single polysilicon non-volatile memory cell
 A method for fabricating a single polysilicon, non-volatile memory device, has been developed. The method features the use of a metal structure, comprised to contact an underlying control gate region, located in the semiconductor structure, in addition to providing the upper electrode, for a capacitor structure. The capacitor structure, in addition to the metal structure used as the upper electrode, is also comprised of an underlying capacitor dielectric layer, and an underlying polysilicon floating gate structure, used as the lower electrode of the capacitor structure. The creation of the capacitor structure results in performance increases realized via the additional control gate coupling capacitance, obtained via the novel configuration described in this invention. 
Taiwan Semiconductor Manufacturing Co.
H
H01L
inventional
Wen-Ting Ming-Chou Di-Son Chang-Song Chuan-Li
Chu Ho Kuo Lin Chang