Birch, Stewart, Kolasch & Birch, LLP
Formation method of semiconductor device structure using patterning stacks
Formation methods of a semiconductor device structure are provided. The method includes forming an under layer over a substrate, forming a middle layer over the under layer, and forming a patterned upper layer over the middle layer. The patterned upper layer has a first opening exposing a portion of the middle layer. The method also includes etching the portion of the middle layer exposed by the first opening to form a second opening exposing a portion of the under layer, and etching the portion of the under layer exposed by the second opening of the middle layer. The method further includes forming pores in the middle layer before or during the etching of the portion of the under layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chin-Hsiang Li-Yen Ching-Yu Kuei-Shun
Lin Lin Chang Chen