Blakely, Sokoloff, Taylor & Zafman
Apparatus for perpendicular-type ultra vacuum chemical vapor deposition
The apparatus for a perpendicular type ultra vacuum chemical vapor deposition, which is for growing an epitaxy crystal as a semiconductor thin film based on a high quality, includes a growth chamber having a quartz tube of a heterostructure for maintaining a uniformity in a growth of an epitaxial layer under a high vacuum and minimizing a thermal transfer from a wafer; a wafer transferring chamber having a perpendicular transfer device for vertically transferring the wafer on which the epitaxial layer grows; a buffer chamber for preventing a stress to a transfer gear caused by a pressure difference with the wafer transferring chamber in vertically transferring the wafer; and a loadlock chamber for reducing a pollution from the outside in the growth of the epitaxial layer, horizontally transferring the wafer completed in the growth of the epitaxial layer, and discharging it to the outside.
Electronics and Telecommunications Research Institute
C H C C C
C23C H01L C23C C30B C23C
inventional inventional inventional inventional inventional
Seung-Yun Kyu-Hwan Hong-Seung Jin-Yeoung
Lee Shim Kim Kang