Baker & McKenzie LLP
Systems and methods for a magnetic memory device that includes a single word line transistor
An MRAM cell comprises a magnetic metal layer and a magnetic sensing device in close proximity to the magnetic metal layer. One end of the magnetic metal layer is coupled with a word line transistor and a diode is included and configured to couple the magnetic sensing device to a bit line. The magnetic metal layer can be used to both program and read the cell, eliminating the need for a second current line in the cell.
Macronix International Co., Ltd.
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