Oblon, McClelland, Maier & Neustadt, L.L.P.
Solid-state imaging device with a signal storing portion including first and second semiconductor regions
According to one embodiment, in a solid-state imaging device, a signal storage portion in each of a plurality of pixels includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of a first conductive type. The first semiconductor region coveres a side wall of an element isolation portion on a side of the signal storage portion. The second semiconductor region is of a second conductive type. The second conductive type is an opposite conductive type to the first conductive type. The second semiconductor region is arranged vertically in a depth direction from a deeper position than a front surface in a semiconductor substrate and extending in a plate shape along the first semiconductor region.
Kabushiki Kaisha Toshiba
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Hirofumi
Yamashita