Scully, Scott, Murphy & Presser, P.C.
Nitrogen based plasma process for metal gate MOS device
The present invention, in one embodiment, provides a method of forming a gate structure including providing a substrate including a semiconducting device region, a high-k dielectric material present atop the semiconducting device region, and a metal gate conductor atop the high-k dielectric material, applying a photoresist layer atop the metal gate conductor; patterning the photoresist layer to provide an etch mask overlying a portion of the metal gate conductor corresponding to a gate stack; etching the metal gate conductor and the high-k dielectric material selective to the etch mask; and removing the etch mask with a substantially oxygen free nitrogen based plasma.
International Business Machines Corporation
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Richard S. Renee T. Ravikumar Xi Naim Siddarth A. Rashmi Ricardo A. Wesley C.
Wise Mo Ramachandran Li Moumen Krishnan Jha Donaton Natzle