Methods to form reduced dimension bit-line isolation in the manufacture of non-volatile memory devices
A method of manufacturing a semiconductor device with a reduced bit-line isolation dimension. After a layer of image sensitive photoresist is patterned and developed with openings having the minimum printable dimension, the layer of photoresist is silylated causing the layer of photoresist to swell, which causes the opening dimension to decrease.
Advanced Micro Devices, Inc.
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Allen S. Chau M. Paul J.
Yu Ho Steffan