Eschweiler & Potashnik, LLC
RRAM cell with PMOS access transistor
In some embodiments, the present disclosure relates to a method of operating an RRAM cell having a PMOS access transistor. The method may be performed by turning on a PMOS transistor having a drain terminal coupled to a lower electrode of an RRAM device. A first voltage is provided to a source terminal of the PMOS transistor, and a second voltage is provided to a bulk terminal of the PMOS transistor. The second voltage is larger than the first voltage. A third voltage is provided to an upper electrode of the RRAM device. The third voltage is larger than the first voltage.
Taiwan Semiconductor Manufacturing Co., Ltd.
G H H H H H G G H G H H H H G G G H H
G11C H01L H01L H01L H01L H01L G11C G11C H01L G11C H01L H01L H01L H01L G11C G11C G11C H01L H01L
additional inventional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional
Wen-Ting Sheng-Hung Hsia-Wei Chin-Chieh Jen-Sheng Yu-Wen Chih-Yang Kuo-Chi
Chu Shih Chen Yang Yang Liao Chang Tu