TFT substrate having three parallel capacitors
Disclosed are a method for manufacturing a TFT substrate having storage capacitors and the TFT substrate. The method includes: (1) forming a gate terminal and a first metal electrode; (2) forming a gate insulation layer and a gate insulation layer through-hole; (3) forming an oxide semiconductor layer; (4) subjecting a portion of the oxide semiconductor layer to N-type heavy doping to form a first conductor electrode thereby constituting a first storage capacitor; (5) forming an etch stop layer and a first etch stop layer through-hole; (6) forming source/drain terminals and a second metal electrode, thereby constituting a second storage capacitor connected in parallel to the first capacitor; (7) forming a protection layer, a protection layer through-hole, and a second etch stop layer through-hole; and (8) forming a pixel electrode and a second conductor electrode, thereby constituting a third storage capacitor connected in parallel to the second capacitor.
Shenzhen China Star Optoelectronics Technology Co., Ltd
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Hejing Xiaowen Wenhui Chihyu Chihyuan Longqiang Yutong
Zhang Lv Li Su Tseng Shi Hu