Myers Bigel Sibley & Sajovec
Post thermal treatment methods of forming high dielectric layers in integrated circuit devices
High dielectric layers formed from layers of hafnium oxide, zirconium oxide, aluminum oxide, yttrium oxide, and/or other metal oxides and silicates disposed on silicon substrates may be nitrided and post thermally treated by oxidation, annealing, or a combination of oxidation and annealing to form high dielectric layers having superior mobility and interfacial characteristics.
Samsung Electronics Co., Ltd.
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Jong-ho Hyung-suk Nae-in Yun-seok
Lee Jung Lee Kim