Lowe, Price, LeBlanc & Becker
Semiconductor device including retrograde well structure with suppressed substrate bias effects
 An n well and a p well are formed in a silicon substrate. The n well has n type impurity concentration peaks and a p type impurity concentration peak. The p well has p type concentration peaks. The impurity concentration peaks serving as channel stopper regions for isolating elements exist only in proximity to the lower surface of an isolation oxide film but not in element regions. 
Mitsubishi Denki Kabushiki Kaisha
H H
H01L H01L
inventional inventional
Hideaki Yoshinori Masahiko
Arima Okumura Takeuchi