Slater & Matsil, L.L.P.
Phase change memory devices with reduced programming current
A phase change memory device and a method of forming the same are provided. The phase change memory device includes a conducting electrode in a dielectric layer, a bottom electrode over the conducting electrode, a phase change layer over the bottom electrode, and a top electrode over the phase change layer. The phase change memory device may further include a heat sink layer between the phase change layer and the top electrode. The resistivities of the bottom electrode and the top electrode are preferably greater than the resistivity of the phase change material in the crystalline state.
Taiwan Semiconductor Manufacturing Company, Ltd. Ritek Corporation
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Denny Duan-lee Wei-Hsiang Teng-Chien Li-Shyue Shyhyeu Wen-chin Hui-Fang
Tang Wang Yu Lai Wang Lin Tsai