Muncy, Geissler, Olds & Lowe, PLLC
Light-emitting diode apparatus and manufacturing method thereof
A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro/nano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro/nano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro/nano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed.
Delta Electronics, Inc.
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additional inventional additional
Shih-Peng Huang-Kun Horng-Jou Chao-Min Ching-Chuan
Chen Chen Wang Chen Shiue