Jacobson, Price, Holman & Stern, PLLC
Method for forming insulating film between metal wirings of semiconductor device
 A method for forming metal wirings, which includes the steps of forming over an insulating film a conduction pattern corresponding to metal wirings, which will be subsequently formed, plasma-treating the surface of the resulting structure, forming an oxide film, which contains Si atoms with a refraction index of 1.47 or above in an excessive amount, using SiH.sub.4 --N.sub.2 O mixed gas, and forming an O.sub.3 -TEOS film over the oxide film. In accordance with this method, it is possible to prevent a formation of voids in the insulating layer and a degradation in the quality of the insulating layer while achieving a superior reproducibility, an improved yield and an improved reliability. 
Hyundai Electronics Industries Co., Ltd.
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Seung Moo
Lee