Tutunjian & Bitetto, P.C.
Formation of semiconductor devices with dual trench isolations
A method for fabricating a semiconductor device with dual trench isolations includes forming a deep trench located between a first region associated with a first array of transistors and a second region associated with a second array of transistors, forming a first shallow trench located between transistors of the first array and a second shallow trench located between transistors of the second array, and forming, by a single dielectric material fill process, a deep trench isolation (DTI) region in the deep trench, a first shallow trench isolation (STI) region in the first shallow trench, and a second STI region in the second shallow trench.
International Business Machines Corporation
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Juntao Kangguo Peng Choonghyun
Li Cheng Xu Lee