Schwabe, Williamson & Wyatt, P.C.
Semiconductor device having group III-V material active region and graded gate dielectric
Semiconductor devices having group III-V material active regions and graded gate dielectrics and methods of fabricating such devices are described. In an example, a semiconductor device includes a group III-V material channel region disposed above a substrate. A gate stack is disposed on the group III-V material channel region. The gate stack includes a graded high-k gate dielectric layer disposed directly between the III-V material channel region and a gate electrode. The graded high-k gate dielectric layer has a lower dielectric constant proximate the III-V material channel region and has a higher dielectric constant proximate the gate electrode. Source/drain regions are disposed on either side of the gate stack.
Intel Corporation
B H H H H H B H H H H H H H
B82Y H01L H01L H01L H01L H01L B82Y H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Gilbert Matthew V. Marko Ravi
Dewey Metz Radosavljevic Pillarisetty