Harness, Dickey & Pierce, P.L.C.
Non-volatile memory devices and methods of manufacturing the same
Semiconductor devices and methods of forming the same. The semiconductor devices include a tunnel insulation layer on a substrate, a floating gate on the tunnel insulation layer, a gate insulation layer on the floating gate, a low-dielectric constant (low-k) region between the top of the floating gate and the gate insulation layer, the low-k region having a lower dielectric constant than a silicon oxide, and a control gate on the gate insulation layer.
Samsung Electronics Co., Ltd.
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Jaeduk Jungdal Sunghoi Yong-Lack
Lee Choi Hur Choi