Novick, Kim & Lee, PLLC
Method and composition for improving LWR in patterning step using negative tone photoresist
The present invention relates to a method of reducing the LWR (Line Width Roughness) of a photoresist pattern using a negative tone photoresist during the fabrication of a semiconductor, and more specifically to a composition capable of reducing LWR in order to ensure a higher pattern CDU after a negative tone development process, and a processing method using the composition, thus reducing the LWR, thereby providing better CDU than existing methods.
YOUNG CHANG CHEMICAL CO., LTD
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Su Jin Seung Hun Seung Hyun Gi Hong
Lee Lee Lee Kim