Modified nitride spacer for solving charge retention issue in floating gate memory cell
A modified nitride spacer and making of the same are disclosed. The modified nitride spacer is formed adjacent a high-temperature oxide (HTO) layer which in turn is formed adjacent the sidewalls of a gate electrode. It is shown that the placement of an intervening oxide layer between the sidewalls of the gate electrode and the nitride spacer, in that order only, provides a significant improvement in charge retention in floating gate memory cells. Also, forming of the spacer from pure, undoped oxide only yields the same favorable results.
Taiwan Semiconductor Manufacturing Company
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Ming-Chou Chuan-Li Di-Son Chang Song Wen-Ting Hsin-Ming
Ho Chang Kuo Lin Chu Chen