Blakely, Sokoloff, Taylor & Zafman LLP
Methods of containing defects for non-silicon device engineering
An apparatus including a device including a channel material having a first lattice structure on a well of a well material having a matched lattice structure in a buffer material having a second lattice structure that is different than the first lattice structure. A method including forming a trench in a buffer material; forming an n-type well material in the trench, the n-type well material having a lattice structure that is different than a lattice structure of the buffer material; and forming an n-type transistor. A system including a computer including a processor including complimentary metal oxide semiconductor circuitry including an n-type transistor including a channel material, the channel material having a first lattice structure on a well disposed in a buffer material having a second lattice structure that is different than the first lattice structure, the n-type transistor coupled to a p-type transistor.
Intel Corporation
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Niloy Matthew V. Van H. Benjamin Jack T. Willy Niti Ravi Seung Hoon Marko Gilbert Robert S.
Mukherjee Metz Le Chu-Kung Kavalieros Rachmady Goel Pillarisetty Sung Radosavljevic Dewey Chau