Fish & Richardson P.C.
Semiconductor device
A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes an insulating layer, a semiconductor layer over the insulating layer, a source electrode layer and a drain electrode layer electrically connected to the semiconductor layer, a gate insulating film over the semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer overlapping with part of the semiconductor layer, part of the source electrode layer, and part of the drain electrode layer with the gate insulating film therebetween. A cross section of the semiconductor layer in the channel width direction is substantially triangular or substantially trapezoidal. The effective channel width is shorter than that for a rectangular cross section.
Semiconductor Energy Laboratory Co., Ltd.
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Kazuya Daisuke Yoshiyuki Motomu Shinya
Hanaoka Matsubayashi Kobayashi Kurata Sasagawa