Ditthavong & Steiner, P.C.
Method for forming fully relaxed silicon germanium on silicon
Semiconductor devices are formed with a thin layer of fully strain relaxed epitaxial silicon germanium on a substrate. Embodiments include forming a silicon germanium (SiGe) epitaxial layer on a semiconductor substrate, implanting a dopant into the SiGe epitaxial layer, and annealing the implanted SiGe epitaxial layer.
GLOBALFOUNDRIES Singapore Pte. Ltd.
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Jinping
Liu