Slater Matsil, LLP
Semiconductor devices, FinFET devices, and manufacturing methods thereof
Semiconductor devices, fin field effect transistor (FinFET) devices, and methods of manufacturing semiconductor devices are disclosed. In some embodiments, a semiconductor device includes a substrate comprising a first fin and a second fin. A first epitaxial fin is disposed over the first fin, and a second epitaxial fin is disposed over the second fin. The second fin is proximate the first fin. The first epitaxial fin and the second epitaxial fin have an upper portion with a substantially pillar shape.
Taiwan Semiconductor Manufacturing Company
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Sung-Li Sey-Ping Chih-Sheng
Wang Sun Chang