Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
A method of generating a non-reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device includes a bitcell having a first MTJ and a second MTJ and programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.
QUALCOMM Incorporated
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Wah Nam Tae Hyun Xiaochun Jungwon Asaf Kangho Nicholas K. Hari M. Jung Pill Wuyang Matthew Michael Xia Steven M. Seung H.
Hsu Kim Zhu Suh Ashkenazi Lee Yu Rao Kim Hao Nowak Li Millendorf Kang