Thomas, Kayden, Horstemeyer & Risley
Electrostatic discharge protection device
An electrostatic discharge protection device comprising a multi-finger gate, a first lightly doped region of a second conductivity, a first heavily doped region of the second conductivity, and a second lightly doped region of the second conductivity. The multi-finger gate comprises a plurality of fingers mutually connected in parallel over an active region of a first conductivity. The first lightly doped region of a second conductivity is disposed in the semiconductor substrate and between two of the fingers. The first heavily doped region of the second conductivity is disposed in the first lightly doped region of the second conductivity. The second lightly doped region of the second conductivity is beneath and adjoins the first lightly doped region of the second conductivity.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H H
H01L H01L H01L
inventional additional inventional
Feng-Chi Deng-Shun Hung-Lin Jian-Hsing
Hung Chang Chen Lee