Schwabe Williamson & Wyatt P.C.
Nonplanar III-N transistors with compositionally graded semiconductor channels
A III-N semiconductor channel is compositionally graded between a transition layer and a III-N polarization layer. In embodiments, a gate stack is deposited over sidewalls of a fin including the graded III-N semiconductor channel allowing for formation of a transport channel in the III-N semiconductor channel adjacent to at least both sidewall surfaces in response to a gate bias voltage. In embodiments, a gate stack is deposited completely around a nanowire including a III-N semiconductor channel compositionally graded to enable formation of a transport channel in the III-N semiconductor channel adjacent to both the polarization layer and the transition layer in response to a gate bias voltage.
Intel Corporation
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Han Wui Robert S. Sanaz K. Marko Benjamin Seung Hoon Sansaptak
Then Chau Gardner Radosavljevic Chu-Kung Sung Dasgupta