Oblon, McClelland, Maier & Neustadt, L.L.P.
Semiconductor memory device
According to one embodiment, a semiconductor memory device includes a memory cell array; a first insulating layer; and a passivation film. The memory cell array includes first interconnect layers and a first memory pillar. The first interconnect layers extend in a first direction substantially parallel to a semiconductor substrate. The first memory pillar passes through the first interconnect layers and extends in a second direction substantially perpendicular to the semiconductor substrate. The first insulating layer is provided above the memory cell array. The passivation film is provided on the first insulating layer, and includes a protrusion at least above the memory cell array and between the passivation film and the first insulating layer.
Toshiba Memory Corporation
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Hiroki Yuichiro Takuji Gin
Yamashita Fujiyama Ohashi Suzuki