Moser, Patterson & Sheridan
Method to reduce polish initiation time in a polish process
High through-put CMP is achieved by the application of a cleaning composition on to an exposed surface of a metal layer prior to polishing the bulk metal layer. Embodiments of the present invention include applying an aqueous composition containing citric acid and ammonium hydroxide in deionized water to remove a native oxide film that forms on a copper containing layer and then polishing the copper containing layer to substantially planarize the metal layer.
Applied Materials, Inc
H C C H
H01L C11D C11D H01L
inventional inventional inventional inventional
Yutao Rajeev Tse-Yong Fred C. Juilung
Ma Bajaj Yao Redeker Li