WPAT, P.C., Intellectual Property Attorneys
Semiconductor image sensor device with deep trench isolations and method for manufacturing the same
A semiconductor image sensor device includes a semiconductor substrate, a radiation-sensing region, and a first isolation structure. The radiation-sensing region is in the semiconductor substrate. The first isolation structure is in the semiconductor substrate and adjacent to the radiation-sensing region. The first isolation structure includes a bottom isolation portion in the semiconductor substrate, an upper isolation portion in the semiconductor substrate, and a diffusion barrier layer surrounding a sidewall of the upper isolation portion.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Shyh-Fann Dun-Nian Wei Chuang Hsiao-Hui Chun-Yuan Yu-Jen Yen-Ting Sheng-Chan Jen-Cheng
Ting Yaung Wu Tseng Chen Wang Chiang Li Liu