Haynes and Boone, LLP
Porogen bonded gap filling material in semiconductor manufacturing
A device includes a substrate; a first layer over the substrate, the first layer containing a metallic material, wherein the first layer includes a trench; and a porous material layer having a first portion and a second portion. The first portion is disposed in the trench. The second portion is disposed on a top surface of the first layer. The first and the second portions contain substantially same percentage of Si, substantially same percentage of O, and substantially same percentage of C.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Hai-Ching Bo-Jiun Tien-I Ching-Yu
Chen Lin Bao Chang