Weaver Austin Villeneuve & Sampson LLP
Method and apparatus for electroplating semiconductor wafer when controlling cations in electrolyte
Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.
Novellus Systems, Inc.
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Hyosang S. Lee James E. Matthew Mark J. Jonathan D. Frederick D. Shantinath Ludan Charles L. Robert Marshall Haiying Steven T. David W. Tighe A.
Lee Brogan Duncan Thorum Willey Reid Wilmot Ghongadi Huang Merrill Stowell Fu Mayer Porter Spurlin