Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
Schottky barrier diode and method for manufacturing schottky barrier diode
A Schottky barrier diode and a method of manufacturing the diode are provided. The diode includes an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and a plurality of p+ regions disposed within the n− type epitaxial layer. An n+ type epitaxial layer is disposed on the n− type epitaxial layer, a Schottky electrode is disposed on the n+ type epitaxial layer, and an ohmic electrode is disposed on a second surface of the n+ type silicon carbide substrate. The n+ type epitaxial layer includes a plurality of pillar parts disposed on the n− type epitaxial layer and a plurality of openings disposed between the pillar parts and that expose the p+ regions. Each of the pillar parts includes substantially straight parts that contact the n− type epitaxial layer and substantially curved parts that extend from the substantially straight parts.
Hyundai Motor Company
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inventional inventional additional inventional
Junghee Dae Hwan Kyoung-Kook Jong Seok Youngkyun
Park Chun Hong Lee Jung