Slater Matsil, LLP
Nanostructure field-effect transistor device and method of forming
A method of forming a semiconductor device includes: forming a fin protruding above a substrate, where a top portion of the fin comprises a layer stack that includes alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin; forming openings in the fin on opposing sides of the dummy gate structure; forming source/drain regions in the openings; removing the dummy gate structure to expose the first semiconductor material and the second semiconductor material under the dummy gate structure; performing a first etching process to selectively remove the exposed first semiconductor material, where after the first etching process, the exposed second semiconductor material form nanostructures, where each of the nanostructures has a first shape; and after the first etching process, performing a second etching process to reshape each of the nanostructures into a second shape different from the first shape.
Taiwan Semiconductor Manufacturing Company, Ltd.
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An Chyi Cheng-Chung Hsiu-Hao Chen-Huang Shun-Hui Ming-Jhe Ryan Chia-Jen
Wei Chang Tsao Huang Yang Sie Chen