Oliff PLC
Semiconductor light emitting diode having a contact portion and a reflective portion
A semiconductor light emitting diode of the present invention includes a semiconductor layer including a light emitting portion, and a pad electrode located on the semiconductor layer, the semiconductor light emitting diode further including, between the semiconductor layer and the pad electrode, a reflective portion including a light transmitting insulating layer serving as a current blocking layer located on the semiconductor layer, and a reflective layer located on the light transmitting insulating layer; a contact portion formed from an ohmic electrode in contact with the reflective portion, located on the semiconductor layer; and a conductive hard film between the reflective layer and the pad electrode, the conductive hard film having HV×t>630, where the Vickers hardness is HV (Hv) and the thickness is t (μm).
DOWA ELECTRONICS MATERIALS CO., LTD.
H H H H H H H H H H H H H H
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Norio Hidetaka Hiroyuki
Tasaki Yamada Togawa