Schwabe, Williamson & Wyatt, P.C.
PN diodes and connected group III-N devices and their methods of fabrication
A semiconductor structure including a group III-N semiconductor material is disposed on a silicon substrate. A group III-N transistor structure is disposed on the group III-N semiconductor material. A well is disposed in the silicon substrate. The well has a first conductivity type. A doped region is disposed in the well. The doped region has a second conductivity type that is opposite to the first conductivity type. A first electrode is connected to the well of the second conductivity type and a second electrode is connected to the doped region having a first conductivity type. The well and the doped region form a PN diode. The well or the doped region is connected to the raised drain structure of the group III-N transistor.
Intel Corporation
C H H H H H H H H H H H H H H H H H H H H H H H H H H H C
C23C H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L C23C
inventional inventional additional additional inventional additional additional additional inventional additional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional additional additional inventional inventional inventional inventional inventional additional inventional
Sansaptak Han Wui Marko
Dasgupta Then Radosavljevic