Ceramic semiconductor capable of increasing the density of surrounding superoxide ions after being heated
Disclosed is a ceramic semiconductor capable of increasing the density of surrounding superoxide ions (O2−) after being heated and passing air. An oxide material capable of enhancing a space charge effect is doped when the ceramic semiconductor is formed, and the ceramic semiconductor has a plurality of through holes, such that after the ceramic semiconductor is electrically conducted to generate current and heat, outer shell electrons of the ceramic semiconductor are separated and remained in the through holes of the ceramic semiconductor and accumulated in the through holes to form an electron cloud. After air passes through the through holes, oxygen in the air collides with an electron and then they combine together to form a superoxide ion (O2−), so as to increase the density of surrounding superoxide ions (O2−).
H H
H05B H01T
inventional additional
Chung-Tai Chia-Hao
Chang Chang