Stanzione & Kim LLP
Apparatus and method to generate plasma
An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.
Samsung Electronics Co., Ltd.
H H
H01J H01J
inventional inventional
Andrey Yuri Vasily Vladimir Sung Chang Yung Hee Won Ceak
Ushakov Tolmachev Pashkovskiy Volynets Park Lee Pak