Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, corner short, and via open test areas
A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, corner short, and via open test areas.
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Sheng-Che Tomasz Rakesh Hans Timothy Nobuharu Markus Stephen Carl Simone Sherry Marcin Dennis Kimon Hideki Indranil Kelvin Andrzej Jeremy Conor John Christopher Marci Vyacheslav Larg Jonathan
Lin Brozek Vallishayee Eisenmann Fiscus Yokoyama Rauscher Lam Taylor Comensoli Lee Strojwas Ciplickas Michaels Matsuhashi De Doong Strojwas Cheng O'Sullivan Kibarian Hess Liao Rovner Weiland Haigh