Ion implantation system for manufacturing semiconductor device
An ion implantation system for manufacturing semiconductor devices includes an ion generator, an ion extractor, an ion converter, an ion mass analyzer, an ion accelerator, an ion focusing device and an end station where a wafer is located and an ion beam is implanted, which are installed along the path of an ion beam. A first portion of the system, including the ion generator, ion extractor, ion converter, ion mass analyzer is arranged along a first horizontal layer. A remaining portion of the system is arranged along a second horizontal layer vertically removed from the first layer. As a result, floor space required for the ion implantation system is reduced, thereby lowering manufacturing costs.
H
H01J
inventional
Tae Hyo Sang Guen Jueng Gon
Ro Oh Kim