Ditthavong & Steiner, P.C.
Forming defect-free relaxed SiGe fins
A method of forming defect-free relaxed SiGe fins is provided. Embodiments include forming fully strained defect-free SiGe fins on a first portion of a Si substrate; forming Si fins on a second portion of the Si substrate; forming STI regions between adjacent SiGe fins and Si fins; forming a cladding layer over top and side surfaces of the SiGe fins and the Si fins and over the STI regions in the second portion of the Si substrate; recessing the STI regions on the first portion of the Si substrate, revealing a bottom portion of the SiGe fins; implanting dopant into the Si substrate below the SiGe fins; and annealing.
GLOBALFOUNDRIES INC.
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Robert Judson Churamani Timothy James Jody Jinping Murat Kerem Bharat
Holt Gaire McArdle Fronheiser Liu Akarvardar Krishnan