Magnetoresistive random-access memory
In an MRAM, each unit cell includes two non-volatile storage units, three N-type transistors and three P-type transistors. Each N-type transistor is coupled in parallel with a corresponding P-type transistor for forming a transmission gate which provides bi-directional current, thereby preventing source degeneration.
UNITED MICROELECTRONICS CORP.
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Yi-Ting Po-Chun Bo-Chang Yung-Ching Cheng-Tung Jen-Yu Jian-Jhong
Wu Yang Li Hsieh Huang Wang Chen