Lee IP Law, P.C.
Semiconductor devices
A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.
SAMSUNG ELECTRONICS CO., LTD.
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Seung Hun Namkyu Edward Jeong Yun Geum Jung Seung Soo
Lee Cho Lee Seong Hong