Tung & Associates
Electron beam shot linearity monitoring
Electron beam (e-beam) shot linearity monitoring is disclosed. A pattern is written that has a predetermined size and a predetermined form in a predetermined position on a substrate, such as a semiconductor wafer, a reticle, or a photomask. The pattern writing fixes the e-beam shot size, as located along one or more critical dimensions of the pattern. The critical dimensions are then measured, where their variations reflect the e-beam shot size linearity. Thereafter, deficiencies in the e-beam shot size linearity can be compensated for, to allow for properly produced semiconductor patterns.
Taiwan Semiconductor Manufacturing Co., Ltd
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H01J H01J H01J H01J B82Y H01J B82Y
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Wen-Chuan Chin-Hsiang Tyng-Hao
Wang Lin Hsu