Jacobson Holman PLLC
Method for manufacturing MTJ cell of magnetic random access memory
A method for fabricating a MTJ cell of a magnetic random access memory (MRAM) using a semiconductor film as a tunnel barrier layer is disclosed. The method comprises the steps of: forming a pinned ferromagnetic layer on a connection layer; forming a tunnel barrier layer using a semiconductor film on the pinned ferromagnetic layer; and forming a free ferromagnetic layer on the tunnel barrier layer.
Hynix Semiconductor Inc.
Y H
Y10S H01L
additional inventional
Seaung Suk
Lee