Roberts Calderon Safran & Cole, P.C.
Electrostatic discharge device
The present disclosure relates to semiconductor structures and, more particularly, to an electrostatic discharge (ESD) device and methods of manufacture. The structure (ESD device) includes: a trigger collector region having fin structures of a first dopant type, a collector region having fin structures in a well of a second dopant type and further including a lateral ballasting resistance; an emitter region having a well of the second dopant type and fin structures of the first dopant type; and a base region having a well and fin structures of the second dopant type.
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Alain F. Souvick Tsung-Che Robert J. You Meng
Loiseau Mitra Tsai Gauthier, Jr. Li Miao