Fliesler, Dubb, Meyer & Lovejoy LLP
Two transistor EEPROM cell using P-well for tunneling across a channel
 A two transistor EEPROM cell is described that is programmed and erased by electron tunneling across a tunneling channel in a P-well. The EEPROM cell has two transistors formed in a semiconductor substrate. The two transistors are a tunneling transistor (NMOS) and a read transistor (NMOS). Electron tunneling occurs to program and erase the EEPROM cell through a tunnel oxide layer by electron tunneling across an entire portion of a tunneling channel upon incurrence of a sufficient voltage potential between a floating gate and the tunnel channel 
Vantis Corporation
G
G11C
inventional
Xiao-Yu Sunil D.
Li Mehta