Harness, Dickey & Pierce, P.L.C.
Magnetic random access memory and method of reading data from the same
A magnetic random access memory (MRAM) includes a memory cell having a first transistor and a first magnetic tunneling junction (MTJ) layer, and a reference cell operable as a basis when reading data stored in the memory cell, the reference cell including second and third MTJ layers arranged in parallel to each other, and a second transistor connected in series to each of the second and third MTJ layers, the second transistor having a driving capability corresponding to twice a driving capability of the first transistor of the memory cell.
Samsung Electronics Co., Ltd.
G G G G G
G11C G11C G11C G11C G11C
inventional inventional inventional inventional inventional
Hyung-soon Wan-jun Sang-jin Dae-jeong Seung-jun Tae-wan
Shin Park Park Kim Lee Kim