Scully, Scott, Murphy & Presser, P.C.
Chemical treatment to retard diffusion in a semiconductor overlayer
The present invention provides a method for retarding the diffusion of dopants from a first material layer (typically a semiconductor) into an overlayer or vice versa. In the method of the present invention, diffusion of dopants from the first semiconductor into the overlayer or vice versa is retarded by forming a monolayer comprising carbon and oxygen between the two layers. The monolayer is formed in the present invention utilizing a chemical pretreatment process in which a solution including iodine and an alcohol such as methanol is employed.
International Business Machines Corporation
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inventional inventional
Woo-Hyeong Henry K. Huajie Michael A. Werner A. Paul A. Kevin K. Ryan M. Renee T. Judson R. Dan M.
Lee Utomo Chen Gribelyuk Rausch Ronsheim Chan Mitchell Mo Holt Mocuta