Tung & Associates
Method for forming amorphous silicon film on single crystal silicon and structure formed
A method for forming amorphous silicon films with low defect density on single crystal silicon substrates and structures formed. The method is carried out by first providing a single crystal silicon substrate, then depositing a buffer layer by a material such as silicon oxide, silicon nitride, silicon carbide or a metal on top of the single crystal silicon substrate. An amorphous silicon film of substantial thickness, i.e. of thicker than 1 &mgr;m, is then deposited on top of the buffer layer achieving a smooth top surface.
Industrial Technology Research Institute
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inventional inventional inventional
Wen-Jiun Yuh-Wen Po-Hao Nai-Hao
Liu Lee Tsai Kuo