Haynes and Boone, LLP
Dual work function gate electrodes
Methods of manufacturing transistor gate electrodes including, in one embodiment, forming a metal layer over first and second regions of a substrate, wherein the first and second regions have different first and second dopant types, respectively. A semiconductor layer is formed over at least a portion of the second region. The metal layer is heated to form a metal gate electrode over the first region, and the metal layer and the semiconductor layer are collectively heated to form a composite metal gate electrode over the second region.
Taiwan Semiconductor Manufacturing Company, Ltd.
H
H01L
inventional
Chih-Hao Chun-Yen Tzung-Lin Yen-Ping
Wang Chang Li Wang