Patterson + Sheridan LLP
Hydrogenation and nitridization processes for reducing oxygen content in a film
Embodiments described herein generally relate to a sequential hydrogenation and nitridization process for reducing interfacial and bulk O atoms in a conductive structure in a semiconductor device. A hydrogenation and plasma nitridization process is performed on a metal nitride layer in a conductive structure prior to deposition of a second metal layer, thereby reducing interfacial oxygen atoms formed on a surface of the metal nitride and oxygen atoms present in the bulk metal layers of the conductive structure. As a result, adhesion of the second metal layer to the metal nitride layer is improved and the electrical resistance of the contact structure is reduced.
APPLIED MATERIALS, INC.
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Wei Shashank Johanes S. Houda Rene Shankar
Liu Sharma Swenberg Graoui George Muthukrishnan