Cantor Colburn LLP
Field-effect transistor having dual channels
An integrated semiconductor device having a substrate with a first substrate region and a second substrate region. The integrated semiconductor device further includes a first field-effect transistor disposed on the substrate in the first substrate region. The first field-effect transistor has a plurality of first fins having a first semiconductor material. In addition, the integrated semiconductor device includes a second field-effect transistor disposed on the substrate in the second substrate region. The second field-effect transistor has a plurality of second fins having a second semiconductor material that differs from the first semiconductor material.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Zhenxing Peng Kangguo Juntao
Bi Xu Cheng Li