Volentine & Whitt, PLLC
NAND-type nonvolatile memory device and related method of manufacture
In a NAND type nonvolatile memory device, a first insulating layer covers a common drain region formed in a string active region and a peripheral active region. A second insulating layer covers the first insulating layer. A bit line plug penetrates the first and second insulating layers and is connected to the common drain region. A peripheral lower plug penetrates the first insulating layer and is connected to the peripheral active region. A peripheral upper plug penetrates the second insulating layer and is stacked on the peripheral lower plug.
Samsung Electronics Co., Ltd.
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inventional inventional inventional
Hyun-Mog Hyun-Jung Seung-Jun
Park Kim Lee