Slater Matsil, LLP
Semiconductor device and method of manufacture
A semiconductor device and method of manufacture are provided in which a passivation layer is patterned. In embodiments, by-products from the patterning process are removed using the same etching chamber and at the same time as the removal of a photoresist utilized in the patterning process. Such processes may be used during the manufacturing of FinFET devices.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Che-Cheng Horng-Huei Wen-Tung Hung-Hao Yu-Cheng
Chang Tseng Chen Chen Liu