Marshall, Gerstein & Borun LLP
Method of fabricating flash memory device
The present invention relates to a method of fabricating a flash memory device and includes forming an air-gap having a low dielectric constant between word lines and floating gates. Further, a tungsten nitride (WN) layer is formed on sidewalls of a tungsten (W) layer for a control gate. Hence, the cross section of the control gate that is finally formed can be increased while preventing abnormal oxidization of the tungsten layer in a subsequent annealing process. The method of the present invention can improve interference between neighboring word lines and, thus improve the reliability of a device. Accordingly, a robust high-speed device can be implemented.
Hynix Semiconductor Inc.
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H01L H01L H01L
inventional inventional inventional
Jung Geun Suk Joong Eun Soo
Kim Kim Kim