Birch, Stewart, Kolasch & Birch, LLP
Siloxane-based resin and method for forming insulating film between interconnect layers in semiconductor devices by using the same
Disclosed herein are siloxane-based resins prepared by hydrolyzing and polycondensing cyclic and/or cage-shape siloxane compounds, optionally with at least one silane compound, in an organic solvent in the presence of a catalyst and water. Also, disclosed herein are methods for forming insulating film between interconnect layers in semiconductor devices by using the siloxane-based resins thus prepared as low dielectric insulating materials.
Samsung Electronics Co., Ltd.
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H01L H01L H01L C08G H01B H01L H01L H01L C08G
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Il Sun Eun Ju Hyun Dam Jin Heong Yi Yeol Jung Hyung Sang Kook
Hwang Nah Jeong Yim Lyu Kim Mah