Seyfarth Shaw LLP
STT-MRAM design enhanced by switching current induced magnetic field
A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.
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Kendrick H. Wenqing Abhishek Seung H. Jung Pill Xia William H.
Yuen Wu Banerjee Kang Kim Li Xia