Muir Patent Law, PLLC
Method of forming patterns and method of manufacturing integrated circuit device
Provided are a method of forming patterns and a method of manufacturing an integrated circuit device. In the method of forming patterns, a photoresist pattern having a first opening exposing a first region of a target layer is formed. A capping layer is formed at sidewalls of the photoresist pattern defining the first opening. An insoluble region is formed around the first opening by diffusing acid from the capping layer to the inside of the photoresist pattern. A second opening exposing a second region of the target layer is formed by removing a soluble region spaced apart from the first opening, with the insoluble region being interposed therebetween. The target layer is etched using the insoluble region as an etch mask.
SAMSUNG ELECTRONICS CO., LTD.
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Tae-hoon Ju-young Yool Su-min Hye-ji Dong-won Hyung-rae
Kim Kim Kang Park Kim Kim Lee