Cushman, Darby & Cushman
Method of producing an acceleration sensor of a semiconductor
 This invention relates to a method of producing an acceleration sensor of a semiconductor. Piezo resistance layers are formed in a silicon tip 2 of a single crystal etched in an anisotropic etching liquid such as a KOH solution, etc., using as a mask a silicon nitride film. Then the silicon tip 2 of the single crystal is soaked in an isotropic etching liquid for a predetermined time and is etched to a depth of 0.5-2.0 .mu.m. Further, a photoresist is applied over a whole surface thereof to form a slot extending to a hollow. 
Nippondenso Co., Ltd.
G G
G01P G01P
inventional inventional
Shinsuke Masakazu Minoru
Watanabe Terada Nishida