Myers Bigel Sibley & Sajovec, PA
Methods of forming metal oxide layers, methods of forming gate structures using the same, and methods of forming capacitors using the same
Provided herein are methods of forming a metal oxide layer that include providing an organometallic compound and an oxidizing agent to the substrate to form the metal oxide layer on the substrate. The organometallic compound may have the general formula of M(NR1R2)3R3, wherein M is a metal; R1 and R2 are each independently hydrogen or alkyl; and R3 is selected from the group consisting of alkyl, cycloalkyl, heterocycloalkyl, aryl and heteroaryl.
Samsung Electronics Co., Ltd.
H H H H H H H C H H C H H
H01L H01L H01L H01L H01L H01L H01L C23C H01L H01L C23C H01L H01L
inventional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Jung-Ho Youn-Joung Seung-Min Kyoo-Chul Jung-Sik Jun-Hyun
Lee Cho Ryu Cho Choi Cho