Roberts Mlotkowski Safran Cole & Calderon, P.C.
Capping structure
The present disclosure relates to semiconductor structures and, more particularly, to capping structures and methods of manufacture. The structure includes: a plurality of gate structures in a first location with a first density; a plurality of gate structures in a second location with a second density different than the first density; and a T-shaped capping structure protecting the plurality of gate structures in the first location and in the second location.
GLOBALFOUNDRIES INC.
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Jinsheng Haigou Jinping Hong Huang
Gao Huang Liu Yu Liu