Robinson Intellectual Property Law Office, P.C.
Method for manufacturing semiconductor device comprising oxide semiconductor layer
A transistor including an oxide semiconductor film, which has stable electric characteristics is provided. A transistor including an oxide semiconductor film, which has excellent on-state characteristics is also provided. A semiconductor device in which an oxide semiconductor film having low resistance is formed and the resistance of a channel region of the oxide semiconductor film is increased. Note that an oxide semiconductor film is subjected to a process for reducing the resistance to have low resistance. The process for reducing the resistance of the oxide semiconductor film may be a laser process or heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 740° C., for example. A process for increasing the resistance of the channel region of the oxide semiconductor film having low resistance may be performed by plasma oxidation or implantation of oxygen ions, for example.
Semiconductor Energy Laboratory Co., Ltd.
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Kosei Toru Kazuya Masaki Sho Motomu Akihisa Suguru
Nei Hasegawa Hanaoka Koyama Nagamatsu Kurata Shimomura Hondo