Oliff PLC
Taper-etching method and method of manufacturing near-field light generator
A method of taper-etching a layer to be etched that is made of a dielectric material and has a top surface. The method includes the steps of: forming an etching mask with an opening on the top surface of the layer to be etched; and taper-etching a portion of the layer to be etched, the portion being exposed from the opening, by reactive ion etching so that a groove having two wall faces intersecting at a predetermined angle is formed in the layer to be etched. The step of taper-etching employs an etching gas containing a first gas contributing to the etching of the layer to be etched and a second gas contributing to the deposition of a sidewall protective film, and changes, during the step, the ratio of the flow rate of the second gas to the flow rate of the first gas so that the ratio increases.
Milipitas
B G G G G G
B44C G11B G11B G11B G02B G11B
inventional inventional inventional additional additional inventional
Shigeki Hironori Yoshitaka Hiroyuki
Tanemura Araki Sasaki Ito