Lee & Morse, P.C.
Three dimensional semiconductor memory devices and methods of fabricating the same
Three dimensional semiconductor memory devices and methods of fabricating the same are provided. According to the method, sacrificial layers and insulating layers are alternately and repeatedly stacked on a substrate, and a cutting region penetrating an uppermost sacrificial layer of the sacrificial layers is formed. The cutting region is filled with a non sacrificial layer. The insulating layers and the sacrificial layers are patterned to form a mold pattern. The mold pattern includes insulating patterns, sacrificial patterns, and the non sacrificial layer in the cutting region. The sacrificial patterns may be replaced with electrodes. The related semiconductor memory device is also provided.
Samsung Electronics Co., Ltd.
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Kyunghyun Daehong Chadong Seongsoo Se-Ho Daehyun Jun-Youl Sunghae JinGyun Kihyun
Kim Eom Yeo Lee Cha Jang Yang Lee Kim Hwang