Maschoff Brennan
Semiconductor device and manufacturing method thereof
A semiconductor device includes a substrate, a source/drain structure, a source/drain contact, a gate structure, a first etching stop layer, and a via contact. The source/drain structure is over the substrate. The source/drain contact is over the source/drain contact. The gate structure is over the substrate. The first etching stop layer is over the gate structure, in which the first etching stop layer includes a first portion and a second portion, and a thickness of the first portion is lower than a thickness the second portion. The via contact extends along a top surface of the first portion of the first etching stop layer to a sidewall of the second portion of the first etching stop layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Li-Zhen Chia-Hao Cheng-Chi Chih-Hao Yu-Ming
Yu Chang Chuang Wang Lin