Rabin & Berdo, P.C.
Nitride semiconductor light-emitting device, and method for manufacturing same
A nitride semiconductor light-emitting device comprises a substrate; a first conductivity type semiconductor layer formed on the substrate; a high-resistance semiconductor layer formed on the first conductivity type semiconductor layer; an active layer formed on the high-resistance semiconductor layer and having multiple quantum wells; and a second conductivity type semiconductor layer formed on the active layer. A first v-pit structure is formed between the high-resistance semiconductor layer and the first conductivity type semiconductor layer, and a second v-pit structure is formed between the active layer and the second conductivity type semiconductor layer. The second v-pit structure is formed such that a lowest part of the second conductivity type semiconductor layer contacts a lowest quantum well of the multiple quantum wells of the active layer through the second v-pit structure.
KOREA PHOTONICS TECHNOLOGY INSTITUTE
H C H H
H01L C22C H01L H01L
inventional inventional inventional inventional
Tae Hoon Seong-Ran Sang-Mook Jong-Hyeob Seung-Jae Sung-Chul
Chung Jeon Kim Baek Lee Choi