Nixon & Vanderhye
Semiconductor device and method for preparing the same
 A semiconductor device comprising a capacitor having a lower electrode of a Si-containing material, an aluminum oxide film formed on the surface of the lower electrode, a dielectric film of Ta.sub.2 O.sub.5 formed on the aluminum oxide film and an upper electrode provided on the dielectric film. 
Sharp Kabushiki Kaisha
H
H01L
inventional
Kouji
Taniguchi