Schwabe, Williamson & Wyatt, P.C.
High electron mobility transistor (HEMT) and method of fabrication
Transistors for high voltage and high frequency operation. A non-planar, polar crystalline semiconductor body having a top surface disposed between first and second opposite sidewalls includes a channel region with a first crystalline semiconductor layer disposed over the first and second sidewalls. The first crystalline semiconductor layer is to provide a two dimensional electron gas (2DEG) within the channel region. A gate structure is disposed over the first crystalline semiconductor layer along at least the second sidewall to modulate the 2DEG. First and second sidewalls of the non-planar polar crystalline semiconductor body may have differing polarity, with the channel proximate to a first of the sidewalls. The gate structure may be along a second of the sidewalls to gate a back barrier. The polar crystalline semiconductor body may be a group III-nitride formed on a silicon substrate with the (1010) plane on a (110) plane of the silicon.
Intel Corporation
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Han Wui Matthew Marko Benjamin Robert Gilbert Niloy Ravi Jack
Then Metz Radosavljevic Chu-Kung Chau Dewey Mukherjee Pillarisetty Kavalieros