Haynes and Boone, LLP
Light emitting diode and method of fabrication thereof
A method includes providing an LED element including a substrate and a gallium nitride (GaN) layer disposed on the substrate. The GaN layer is treated. The treatment includes performing an ion implantation process on the GaN layer. The ion implantation process may provide a roughened surface region of the GaN layer. In an embodiment, the ion implantation process is performed at a temperature of less than approximately 25 degrees Celsius. In a further embodiment, the substrate is at a temperature less than approximately zero degrees Celsius during the ion implantation process.
TSMC Solid State Lighting Ltd.
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Ching-Wen Chyi Shyuan Kuang-Huan Hsin-Hsien Chun-Lin
Hsiao Chern Hsu Wu Chang