Oblon, Spivak, McClelland, Maier & Neustadt
Method of forming a thin film
 A thin film-forming method according to the present invention is characterized by comprising the steps of introducing TiCl.sub.4, hydrogen, nitrogen and NF.sub.3 into a film-forming chamber containing a semiconductor substrate (1) having a groove made in its surface, after the chamber has been evacuated to 10.sup.-4 Torr or less; and converting these gases into plasma, thereby forming a thin TiN film on only that portion of the groove which is other than the wall surfaces of the groove. 
Tokyo Electron Yamanashi Limited Tokyo Electron Limited Kabushiki Kaisha Toshiba
C H C H H
C23C H01L C23C H01L H01L
inventional inventional inventional inventional inventional
Kyoichi Hitoshi Haruo Kazuya Nobuo Syuji Shinji
Suguro Ito Okano Nagaseki Hayasaka Mochizuki Himori