Dugan & Dugan, PC
Use of CL2 and/or HCL during silicon epitaxial film formation
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
Applied Materials, Inc.
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Xiao Zhiyuan Jinsong Ali Xiaowei Yihwan Arkadii V. Nicholas C.
Chen Ye Tang Zojaji Li Kim Samoilov Dalida