Ditthavong & Steiner, P.C.
Siloxane and organic-based MOL contact patterning
Methods of MOL S/D contact patterning of RMG devices without gouging of the Rx area or replacement of the dielectric are provided. Embodiments include forming a SOG layer around a RMG structure, the RMG structure having a contact etch stop layer and a gate cap layer; forming a lithography stack over the SOG and gate cap layers; patterning first and second TS openings through the lithography stack down to the SOG layer; removing a portion of the SOG layer through the first and second TS openings, the removing selective to the contact etch stop layer; converting the SOG layer to a SiO2 layer; forming a metal layer over the SiO2 layer; and planarizing the metal and SiO2 layers down to the gate cap layer.
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Huang Shyam Xintuo Kenneth A. Bharat Haigou Chang Ho Jinping Andy Guillaume Haifeng SangWoo Anthony Ja-Hyung Huy M.
Liu Pal Dai Bates Krishnan Huang Maeng Liu Wei Bouche Sheng Lim Ozzello Han Cao