Haynes and Boone, LLP
Method of fabricating semiconductor image sensor device having back side illuminated image sensors with embedded color filters
Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Hsin-Chi Volume Chun-Hao Chiu-Jung Yun-Wei Yung-Lung Kuo-Cheng
Chen Chien Chou Chen Cheng Hsu Lee