Cantor Colburn LLP
Fluorinated tin oxide back contact for AZTSSe photovoltaic devices
A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag2ZnSn(S,Se)4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.
INTERNATIONAL BUSINESS MACHINES CORPORATION
H H H H Y H H H Y H
H01L H01L H01L H01L Y02P H01L H01L H01L Y02E H01L
inventional inventional inventional inventional additional inventional inventional inventional additional inventional
Talia S. Oki Yun Seog Richard A.
Gershon Gunawan Lee Haight