Myers Bigel Sibley & Sajovec, PA
Methods of forming capacitors with high dielectric layers and capacitors so formed
Methods of forming a capacitor of a semiconductor device can include forming a lower electrode of a capacitor on a semiconductor substrate and forming a dielectric material layer of Ba(Ti1-xSnx)O3 (BTS) or Ba(Ti1-xZrx)O3 (BTZ) on the lower electrode. An amorphous layer can be formed on the dielectric material layer. An upper electrode of the capacitor can be formed on the amorphous layer.
Samsung Electronics Co., Ltd.
H
H01L
inventional
Dal-won Seung-hwan Jae-dong Song-won Sung-tae Young-sun
Lee Lee Byun Ko Kim Kim