Brinks Hofer Gilson & Lione
Tunneling magnetoresistive element which includes Mg-O barrier layer and in which nonmagnetic metal sublayer is disposed in one of magnetic layers
In a tunneling magnetoresistive element, an insulating barrier layer is made of Mg—O, and a first pinned magnetic layer has a laminated structure in which a nonmagnetic metal sublayer made of Ta is interposed between a lower ferromagnetic sublayer and an upper ferromagnetic sublayer. The nonmagnetic metal sublayer has an average thickness of about 1 Å or more and about 5 Å or less.
Alps Electric Co., Ltd.
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G01R G11B G11B B82Y B82Y G01R H01L
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Kazumasa Masamichi Hidekazu Naoya Yosuke Ryo Yoshihiro
Nishimura Saito Kobayashi Hasegawa Ide Nakabayashi Nishiyama