Posz Law Group, PLC
Semiconductor device having lateral MOS transistor and zener diode
A semiconductor device includes: a semiconductor substrate; a lateral MOS transistor disposed in the substrate; a Zener diode disposed in the substrate; and a capacitor disposed in the substrate. The transistor includes a drain and a gate, and the diode and the capacitor are coupled in series between the drain and the gate. This device has minimized dimensions and high switching speed. Further, both of a switching loss and a surge voltage are improved.
DENSO CORPORATION
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Kyoko Yasushi Yoshiyuki Takashi Tetsuo Shigeki Makoto Nozomu
Okada Higuchi Hattori Nakano Fujii Takahashi Kuwahara Akagi