McDermott Will & Emery
Semiconductor device
A semiconductor device includes: lower storage node electrodes provided on a main surface of a silicon substrate; a dielectric film provided on the lower storage node electrodes; an upper cell plate electrode provided on the dielectric film; and an interlayer insulating film covering the upper cell plate electrode. The upper cell plate electrode contains ruthenium. The interlayer insulating film has a contact hole reaching the upper cell plate electrode. The contact hole is provided so that the distance between the main surface of the silicon substrate and the bottom face of the contact hole is not less than the distance between the main surface of the silicon substrate and the bottom face of the upper cell plate electrode. A semiconductor device is provided wherein contact defects in the upper electrode and the generation of an area penalty are prevented.
Renesas Technology Corp.
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inventional additional additional
Masahiko Takashi
Takeuchi Dokan