Ditthavong & Steiner P.C.
Semiconductor devices with robust low-k sidewall spacers and method for producing the same
A method of forming a robust low-k sidewall spacer by exposing an upper portion of the spacer to a thermal and plasma treatment prior to downstream processes and resulting device are provided. Embodiments include providing a pair of gates separated by a canyon trench over a substrate, an EPI layer in a bottom of the canyon trench, respectively, and a low-k spacer on each opposing sidewall of the pair; forming a masking layer in a bottom portion of the canyon trench, an upper portion of the low-k spacers exposed; and treating the upper portion of the low-k spacers with a thermal and plasma treatment.
GLOBALFOUNDRIES INC.
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Tao Junsic Jinping Man Keith Charlotte Jiehui Asli
Han Hong Liu Gu Tabakman Adams Shu Sirman