Electrostatic discharge protection device and method of manufacturing the same
An electrostatic discharge protection device that includes a semiconductor substrate of a first dopant type, at least one source/drain pair of a second dopant type formed in the substrate, wherein the source/drain pair is separated to define a channel region therebetween, a lightly-doped region of the first dopant type defined between the source/drain pair and including at least a portion of the channel region, a gate dielectric layer formed over the substrate, and a gate formed over the gate dielectric layer and above the channel region.
H H
H01L H01L
inventional additional
Jeng-Jie Ming-Dou Tang-Kui Chyh-Yih Hsin-Chin
Peng Ker Tseng Chang Jiang