Tutunjian & Bitetto, P.C.
RRAM cells in crossbar array architecture
A method is presented for forming vertical crossbar resistive random access memory (RRAM) cells. The method includes forming a substantially U-shaped bottom electrode over a substrate, filling the U-shaped bottom electrode with a first conductive material, capping the U-shaped bottom electrode with a dielectric cap, depositing a high-k material, and forming a top electrode such that active areas of the RRAM cells are vertically aligned and the U-shaped bottom electrode is shared between neighboring RRAM cells.
International Business Machines Corporation
H H G H H H H H G H H H H H
H01L H01L G06N H01L H01L H01L H01L H01L G06N H01L H01L H01L H01L H01L
inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Takashi Dexin Juntao Kangguo
Ando Kong Li Cheng