Birch, Stewart, Kolasch & Birch, LLP
Resistive memory and memory cell
A memory unit is provided. The memory unit includes a resistive element, a diode, and a first transistor. The resistive element has a first terminal receiving a bit voltage and a second terminal coupled to a first node. The diode has an anode coupled to the first node and a cathode coupled to a second node. The second node receives a word voltage. The first transistor has a control electrode, a first electrode coupled to the first node, and a second electrode.
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
G G G G G G
G11C G11C G11C G11C G11C G11C
additional inventional additional inventional additional inventional
Yin-Ting Yung-Chang Chih-Chuan
Lin Chen Ke