Morrison & Foerster LLP
Semiconductor device
The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.
Sanyo Electric Co., Ltd. Sanyo Semiconductor Co., Ltd.
H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional additional inventional inventional inventional additional additional inventional additional additional additional additional additional
Shigeki Hiroshi Takashi Shinzo Noboru Mitsuru Katsuhiko Hiroyuki Yuichi Kazuo
Otsuka Yamada Noma Ishibe Okubo Okigawa Kitagawa Shinogi Morita Okada