Fliesler, Dubb, Meyer & Lovejoy LLP
Sourceless floating gate memory device and method of storing data
 A floating gate diode which can be used as a sourceless memory cell, and which may be arranged into an array of memory cells is disclosed. The floating gate diode comprises: a drain region formed in a substrate; an oxide overlying and associated with the drain region; and a floating gate overlying the oxide. Upon application of a voltage to the drain, a current between the drain and substrate is induced in proportion to an amount of electrons stored on the gate. The cells may be arranged into an array which comprises a substrate having a surface; a plurality of drain regions, one of said drain regions respectively corresponding to one of the plurality of cells, formed in the substrate; an oxide region overlying the plurality of drain regions on the surface of the substrate; and a plurality of floating gates overlying the oxide and respectively associated with the plurality of drain regions. 
Advanced Micro Devices, Inc.
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Jian
Chen