Ditthavong & Steiner, P.C.
Method and apparatus for adjusting threshold voltage in a replacement metal gate integration
A methodology for enabling a gate stack integration process that provides additional threshold voltage margin without sacrificing gate reliability and the resulting device are disclosed. Embodiments include conformally forming a margin adjusting layer in a gate trench, forming a metal capping layer on the margin adjusting layer, and forming an n-type work function (nWF) metal layer on the metal capping layer.
GlobalFoundries Inc.
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Bharat V. Bongki Jinping
Krishnan Lee Liu