Myers Bigel Sibley & Sajovec
Methods of forming integrated circuit structures using insulator deposition and insulator gap filling techniques
Methods of forming integrated circuit devices include depositing an electrically insulating layer onto an integrated circuit substrate having integrated circuit structures thereon. This deposition step results in the formation of an electrically insulating layer having an undulating surface profile, which includes at least one peak and at least one valley adjacent to the at least one peak. A non-uniform thickening step is then performed. This non-uniform thickening step includes thickening a portion of the electrically insulating layer by redepositing portions of the electrically insulating layer from the least one peak to the at least one valley. This redeposition occurs using a sputter deposition technique that utilizes the electrically insulating layer as a sputter target.
International Business Machines Corporation Infineon Technologies AG Samsung Electronics Co., Ltd. Chartered Semiconductor Manufacturing Ltd.
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Alois O-sung Dae-won Jun-jung Jae-eon Johnny Ja-hum Sunfei
Gutmann Kwon Yang Kim Park Widodo Ku Fang