Duane Morris LLP
Method of forming contact plug on silicide structure
A method of manufacturing a semiconductor device is provided comprising the steps of: (a) forming a semiconductor element on a substrate, the semiconductor element having at least one nickel silicide contact region, a first etch stop layer formed over the element and an insulating layer formed over the first etch stop layer; (b) forming an opening through the insulating layer over the contact region at least to the first etch stop layer; (c) removing a portion of the first etch stop layer contacting a selected contact region using a process that does not substantially oxidize with the contact region, to form a contact opening to the contact region; and (d) filling the contact opening with conductive material to form a contact.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Ju-Wang Ming-Huan Shau-Lin Chii-Ming Chih-Wei
Hsu Tsai Shue Wu Chang