Fliesler, Dubb, Meyer & Lovejoy
Boron doped silicon capacitor plate
 A nonvolatile memory device utilizing a program junction region of a p-type impurity and oxide grown thereon. In one aspect, the device comprises a programming structure and a program junction separated from said programming structure by a field oxide region. A program junction oxide layer overlies said program junction region. A floating gate is provided over the oxide which covers said programming structure, said program junction oxide layer, and in some embodiments the gate oxide of a sense transistor. 
Vantis Corporation
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inventional inventional inventional
Sunil D. Xiao-Yu Christopher O.
Mehta Li Schmidt