Birch, Stewart, Kolasch & Birch, LLP
Semiconductor structure with nanostructure and method for manufacturing the same
Semiconductor structures and methods for forming the same are provided. The method includes forming a fin protruding from a substrate and forming an isolation structure surrounding the fin. The method also includes epitaxially growing channel fins on sidewalls of the fin over the isolation structure and etching the fin to form a space between the channel fins. The method further includes forming a gate structure to fill the space between the channel fins.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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inventional inventional additional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional
Chih-Hao Chih-Chao Chun-Hsiung Pei-Hsun
Wang Chou Lin Wang