WPAT, P.C., Intellectual Property Attorneys
Image sensing device and manufacturing method thereof
Some embodiments of the present disclosure provide a back side illuminated (BSI) image sensor. The back side illuminated (BSI) image sensor includes a semiconductive substrate and an interlayer dielectric (ILD) layer at a front side of the semiconductive substrate. The ILD layer includes a dielectric layer over the semiconductive substrate and a contact partially buried inside the semiconductive substrate. The contact includes a silicide layer including a predetermined thickness proximately in a range from about 600 angstroms to about 1200 angstroms.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Chi-Ming Yao-Hsiang Chih-Chang Jung-Chih Jian-Ming
Lu Liang Huang Tsao Chen