Patterson & Sheridan, L.L.P.
Method for producing a metal backside contact of a semiconductor component, in particular, a solar cell
The present invention relates to a method for manufacturing a backside contact of a semiconductor component, in particular, of a solar cell, comprising a metallic layer on the backside of a substrate in a vacuum treatment chamber, and the use of a vacuum treatment system for performing said method. Through this method and its use, in particular silicon based solar cells, can be provided with a back contact in a simple manner in a continuous process sequence, wherein the process sequence can be provided particularly efficient and economical, since no handling systems for rotating the substrate are required, and in particular silk screening steps can be dispensed with.
Applied Materials, Inc.
H Y
H01L Y02E
inventional additional
Stephan Jürgen Jian Gerhard Roland
Wieder Henrich Liu Rist Trassl