Slater Matsil, LLP
Metal-semiconductor contact structure with doped interlayer
Disclosed herein is a method of forming a metal-to-semiconductor contact with a doped metal oxide interlayer. An insulating layer is formed on a top surface of a semiconductor substrate with target region at the top surface of the semiconductor substrate. An opening is etched through the insulating layer with the opening exposing a top surface of a portion of the target region. A doped metal oxide interlayer is formed in the opening and contacts the top surface of the target region. The remainder of the opening is filled with a metal plug, the doped metal oxide interlayer disposed between the metal plug and the substrate. The doped metal oxide interlayer is formed from one of tin oxide, titanium oxide or zinc oxide and is doped with fluorine.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chih-Wei You-Hua Sheng-Hsuan Yu-Hung
Chang Chou Lin Lin