Blakely, Sokoloff, Taylor & Zafman LLP
Selective epitaxially grown III-V materials based devices
A first III-V material based buffer layer is deposited on a silicon substrate. A second III-V material based buffer layer is deposited onto the first III-V material based buffer layer. A III-V material based device channel layer is deposited on the second III-V material based buffer layer.
Intel Corporation
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Niloy Matthew V. Robert S. Gilbert Niti Jack T. Benjamin Marko
Mukherjee Metz Chau Dewey Goel Kavalieros Chu-Kung Radosavljevic