Maschoff Brennan
Semiconductor device and fabricating method thereof
A semiconductor device includes a fin structure extending along a first direction, a channel layer wrapping around a top surface and opposite sidewalls of the fin structure, a gate stack extending across the channel layer along a second direction perpendicular to the first direction, and a spacer on a top surface of the channel layer and a sidewall of the gate stack when viewed in a cross section taken along the first direction. The channel layer includes a two-dimensional material. The gate stack includes a ferroelectric layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Carlos H. Chih-Sheng Ling-Yen Chun-Chieh Tung-Ying Meng-Hsuan
Diaz Chang Yeh Lu Lee Hsiao