The Marbury Law Group PLLC
Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same
An annular dielectric spacer can be formed at a level of a joint-level dielectric material layer between vertically neighboring pairs of alternating stacks of insulating layers and spacer material layers. After formation of a memory opening through multiple alternating stacks and formation of a memory film therein, an anisotropic etch can be performed to remove a horizontal bottom portion of the memory film. The annular dielectric spacer can protect underlying portions of the memory film during the anisotropic etch. In addition, a silicon nitride barrier may be employed to suppress hydrogen diffusion at an edge region of peripheral devices.
SANDISK TECHNOLOGIES LLC
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Kazutaka Hiroyuki Jiyin Tadashi Yasuaki Kazuya Jin Dai Murshed Marika Matthias Hiroyuki
Yoshizawa Ogawa Xu Nakamura Yonemochi Tokunaga Liu Iwata Chowdhury Gunji-Yoneoka Baenninger Kinoshita