Mills & Onello, LLP
Semiconductor device structure with strain layer and method of fabricating the semiconductor device structure
A semiconductor device with a strain layer and a method of fabricating the semiconductor device with a strain layer that can reduce a loading effect are provided. By arranging active dummies and gate dummies not to overlap each other, the area of active dummy on which a strain layer dummy will be formed can be secured, thereby reducing the loading effect.
Samsung Electronics Co., Ltd.
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Quan Hyun-min Heon-jong Sung-rey Seung-hwan Shigenobu
WangXiao Choi Shin Wi Lee Maeda