Brinks Hofer Gilson & Lione
Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor
A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.
Alps Electric Co., Ltd.
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G01R G11C H01F B82Y G01R H01F G11B B82Y H01L G11B H01F H01L B82Y
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Kenichi Yosuke Naoya Ryo Kazuaki Masamichi Yoshihiro Hidekazu Kazumasa Eiji
Tanaka Ide Hasegawa Nakabayashi Ikarashi Saito Nishiyama Kobayashi Nishimura Umetsu