Birch, Stewart, Kolasch & Birch, LLP
Method for preventing extreme low-K (ELK) dielectric layer from being damaged during plasma process
A method for forming an interconnect structure is provided. The method includes providing a substrate. The method also includes forming a dielectric layer on the substrate, and the dielectric layer includes an extreme low-k (ELK) dielectric layer. The method includes forming a via hole in the dielectric layer and forming a photoresist in the via hole and on the dielectric layer. The method also includes removing the photoresist by a plasma process using a CxHyOz gas and forming a conductive structure in the via hole.
Taiwan Semiconductor Manufacturing Co., Ltd
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Yu-Cheng Hung-Hao Yu-Shu
Liu Chen Chen