J. C. Patents
Semiconductor device and method of forming the same
Provided is a semiconductor device including a memory gate structure and a select gate structure. The memory gate structure is closely adjacent to the select gate structure. Besides, an air gap encapsulated by an insulating layer is disposed between the memory gate structure and the select gate structure.
United Microelectronics Corp.
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Wei Shen-De Zhen Yi-Shan Wei-Chang Wang
Ta Wang Chen Chiu Liu Xiang