Lee & Morse, P.C.
Programming method of multi-bit flash memory device for reducing programming error
A method of programming a plurality of memory cells of a flash memory device by selectively changing a threshold voltage distribution thereof from a first distribution to a second distribution, the method includes selecting at least one of the memory cells to be programmed, and programming the at least one selected memory cell to a voltage higher than a verify voltage, wherein the verify voltage is one of threshold voltages included in the first distribution or is higher than the threshold voltages included in the first distribution.
Samsung Electronics Co., Ltd.
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Seung-Jae
Lee