Syncoda LLC
Nitride light emitting diode and fabrication method thereof
A nitride light-emitting diode (LED) fabrication method includes: providing a glass substrate; stacking a buffer layer structure composed of circular SiAlN layers and AlGaN layers with the number of cycles 1-5; growing a non-doped GaN layer, an N-type layer, a quantum well layer and a P-type layer. By using the low-cost glass the substrate that has a mature processing technology, and growing a SiAlN and an AlGaN buffer layer thereon, lattice mismatch constant between the substance and the epitaxial layer can be improved. Therefore, photoelectric property of the LED can be improved.
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional inventional additional additional inventional additional additional inventional inventional
Changwei Hsiang-pin Chan-chan Chia-hung
Song Hsieh Ling Chang