Studebaker & Brackett PC
Method for manufacturing silicon carbide semiconductor device
A method for manufacturing a silicon carbide semiconductor device includes: preparing a silicon carbide single crystal substrate having a flatness with an average roughness of 0.2 nm or less; gas-etching a surface of the silicon carbide single crystal substrate under an atmosphere of a reducing gas; and forming a silicon carbide layer on the gas-etched surface of the silicon carbide single crystal substrate, wherein an etching rate of the gas etching is made in a range of 0.5 μm/hour or faster to 2.0 μm/hour or slower.
Mitsubishi Electric Corporation
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Akihito Takahiro Yoichiro Kenichi Nobuyuki
Ohno Yamamoto Mitani Hamano Tomita