Slater Matsil, LLP
Bond pad structure for semiconductor device and method of forming same
A package includes a first die that includes a first metallization layer, one or more first bond pad vias on the first metallization layer, wherein a first barrier layer extends across the first metallization layer between each first bond pad via and the first metallization layer, and one or more first bond pads on the one or more first bond pad vias, wherein a second barrier layer extends across each first bond pad via between a first bond pad and the first bond pad via, and a second die including one or more second bond pads, wherein a second bond pad is bonded to a first bond pad of the first die.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Hsien-Wei Ming-Fa Sung-Feng Jie
Chen Chen Yeh Chen