Slater Matsil, LLP
Methods of forming an interconnect structure
A method of forming an interconnect structure is provided. The method includes forming a first dielectric layer, and forming an opening in the first dielectric layer. The method also includes applying a gas to the first dielectric layer adjacent to the opening, where after applying the gas to the first dielectric layer adjacent to the opening, a bottom surface of the opening has been planarized. The method also includes etching the first dielectric layer through the opening to expose a first contact underlying the first dielectric layer, and forming a conductive line in the opening.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chun-Te Chien-Chih Ming-Chung
Ho Chiu Liang