Eschweiler & Potashnik, LLC
Extra doped region for back-side deep trench isolation
The present disclosure, in some embodiments, relates to a CMOS image sensor. The CMOS image sensor has an image sensing element disposed within a substrate. A plurality of isolation structures are arranged along a back-side of the substrate and are separated from opposing sides of the image sensing element by non-zero distances. A doped region is laterally arranged between the plurality of isolation structures. The doped region is also vertically arranged between the image sensing element and the back-side of the substrate. The doped region physically contacts the image sensing element.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Hsiao-Hui Ching-Chun Shyh-Fann Tzu-Jui Yen-Ting Chun-Yuan Jhy-Jyi Yuichiro Yu-Jen Dun-Nian
Tseng Wang Ting Wang Chiang Chen Sze Yamashita Wang Yaung