Toler Law Group, PC
MRAM initialization devices and methods
A device includes a redundant region of a magnetoresistive random access memory (MRAM) array that includes first memory cells. The device includes a data region of the MRAM array that includes second memory cells. The device includes a fail address region of the MRAM array, a first row of the fail address region including validity data, wherein the validity data includes multiple validity indicators, a last row indicator, or both.
Qualcomm Incorporated
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Sungryul Jung Pill Hyunsuk
Kim Kim Shin