Entegris, Inc.
In-situ oxidized NiO as electrode surface for high k MIM device
A high dielectric constant metal-insulator structure, including an electrode comprising NiOx wherein 1<x≤1.5, and a high k dielectric material in contact with the electrode. The structure may have a further electrode in contact with the high k dielectric material, to form a metal-insulator-metal (MIM) capacitor, e.g., including a bottom electrode comprising NiOx wherein 1<x≤1.5, a high k dielectric material overlying the bottom electrode, and a top electrode comprising NiOx wherein 1<x≤1.5. The NiOx electrodes in such applications are oxide-stable, high work function electrodes that avoid deterioration of work function and conductivity during electronic device fabrication involving elevated temperature annealing.
ENTEGRIS, INC.
H C H C H
H01G C23C H01L C23C H01G
inventional inventional inventional inventional inventional
Weimin James Anthony Bryan C.
Li O'Neill Hendrix