Hamre, Schumann, Mueller & Larson, P.C.
Power semiconductor apparatus and fabrication method for the same
The power semiconductor apparatus includes: a semiconductor device 401; a bonding layer on chip 416 disposed on an upper surface of the semiconductor device; and a metal lead 419 disposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal lead 420 has a three-laminated structure including: a second metal layer 420b having a CTE equal to or less than 5×10−6/° C., for example; and a first metal layer 420a and a third metal layer 420c sandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.
ROHM CO., LTD.
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additional inventional additional additional additional additional inventional additional additional additional inventional inventional additional inventional additional additional additional additional additional additional inventional additional inventional additional additional additional inventional additional additional additional additional inventional additional additional additional additional additional additional additional additional additional inventional additional inventional inventional additional additional additional additional additional inventional inventional additional inventional additional inventional additional additional additional additional additional inventional additional additional additional additional additional additional additional additional additional additional additional inventional additional additional additional additional additional inventional additional additional additional additional additional additional additional additional additional additional additional additional
Takukazu Seita Maiko Katsuhiko Ryuta
Otsuka Iwahashi Hatano Yoshihara Watanabe