Slater Matsil, LLP
Air spacer and method of forming same
In an embodiment, a method of forming a semiconductor device includes forming a dummy gate stack over a substrate; forming a first spacer layer over the dummy gate stack; oxidizing a surface of the first spacer layer to form a sacrificial liner; forming one or more second spacer layers over the sacrificial liner; forming a third spacer layer over the one or more second spacer layers; forming an inter-layer dielectric (ILD) layer over the third spacer layer; etching at least a portion of the one or more second spacer layers to form an air gap, the air gap being interposed between the third spacer layer and the first spacer layer; and forming a refill layer to fill an upper portion of the air gap.
Taiwan Semiconductor Manufacturing Co., Ltd.
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An Chyi Shiang-Bau Cheng-Chung Szu-Ping Chia-Jen Shao-Hua Ming-Jhe Chen-Huang
Wei Wang Chang Lee Chen Hsu Sie Huang