McDermott Will & Emery LLP
Semiconductor device
PMISFETs and NMISFETs are placed in a capacitance measuring circuit. Each of interconnects is connected via the corresponding PMISFET through a charging voltage supply part to a power supply pad and via the corresponding NMISFET through a current sampling part to a current-monitoring pad. A current I can be measured by bringing a probe of an ammeter into contact with the current-monitoring pad.
Matsushita Electric Industrial Co., Ltd.
G G
G01R G01R
inventional additional
Tatsuya Toshiki Tetsuya Kyoji
Kunikiyo Kanamoto Watanabe Yamashita