Vertical double diffusion metal-oxide-semiconductor power device
A vertical double diffusion metal-oxide-semiconductor power device with thermal sensitivity unit includes a vertical double diffusion metal-oxide-semiconductor power transistor and at least one thermal sensitivity unit. The vertical double diffusion metal-oxide-semiconductor power transistor includes a first metal layer, a substrate layer, an epitaxy layer, a second metal layer, and a plurality of first polysilicon layers, wherein each first polysilicon layer of the plurality of first polysilicon layers corresponds to a first oxide layer, a first doping well and a second doping well with second conductivity type, a first doped region and a second doped region with first conductivity type, and a second oxide layer. The at least one thermal sensitivity unit is used for detecting a temperature when the vertical double diffusion metal-oxide-semiconductor power transistor operates, and the vertical double diffusion metal-oxide-semiconductor power transistor and the at least one thermal sensitivity unit share a same process.
Leadtrend Technology Corp.
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Jen-Hao Chiung-Feng
Yeh Chou