Schwegman Lundberg & Woessner, P.A.
Resistive random access memory device, method for manufacturing the same, and method for operating the same
A resistive random access memory device, a method for manufacturing the resistive random access memory device, and a method for operating the resistive random access memory device are disclosed. The resistive random access memory device includes a resistive switching memory element including two electrodes and a layer of variable-resistance material between the two electrodes, wherein the layer of variable-resistance material exhibits bipolar resistive switching behavior; and a Schottky diode including a metal layer and a p-doped semiconductor layer which contact each other, wherein the metal layer of the Schottky diode is coupled to one of the two electrodes of the resistive switching memory element. The present disclosure provides the resistive random access memory device operating in bipolar resistive switching scheme.
Peking University
H G H G H H G G G H G G G
H01L G11C H01L G11C H01L H01L G11C G11C G11C H01L G11C G11C G11C
additional inventional inventional additional inventional inventional additional inventional inventional inventional additional inventional additional
Lifeng Xiaoyan Jinfeng Bin Bing Yuansha
Liu Liu Kang Gao Sun Chen