Muir Patent Law, PLLC
Slurry compositions for polishing a metal layer and methods for fabricating semiconductor devices using the same
A slurry composition for polishing a metal layer and a method for fabricating a semiconductor device using the same are provided. The slurry composition for polishing a metal layer includes polishing particles including a metal oxide, an oxidizer including hydrogen peroxide, and a first polishing regulator including at least one selected from a group consisting of phosphate, phosphite, hypophosphite, and metaphosphate, wherein a content of the oxidizer is 0.01 wt % to 0.09 wt % with respect to 100 wt % of the slurry composition for polishing the metal layer.
SAMSUNG ELECTRONICS CO., LTD. KCTECH Co., Ltd.
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H01L C09G H01L H01L H01L H01L H01L
inventional inventional inventional additional additional additional additional
Jung Hun Hyun Goo Hao Il Young Sang Kyun Woo In Jong Hyuk Hee Sook Sang Mi Seung Ho
Kim Kong Cui Yoon Kim Lee Park Cheon Lee Park