Lowe Hauptman Ham & Berner, LLP
Accumulation type FinFET, circuits and fabrication method thereof
A FinFET includes a substrate and a fin structure on the substrate. The fin structure includes a channel between a source and a drain, wherein the source, the drain, and the channel have the first type dopant. The channel includes a Ge, SiGe, or III-V semiconductor. A gate dielectric layer is located over the channel and a gate is located over the gate dielectric layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chih Chieh Chih-Sheng Clement Hsingjen
Yeh Chang Wann