Birch, Stewart, Kolasch & Birch, LLP
Semiconductor device and method of fabricating the same
A method includes forming a dummy gate stack over a substrate; forming a gate spacer on a sidewall of the dummy gate stack; after forming the gate spacer, forming a source/drain region in the substrate and adjacent to the gate spacer; forming a first interlayer dielectric layer over the source/drain region and adjacent to the gate spacer; replacing the dummy gate stack with a metal gate stack; forming a protective layer over the metal gate stack and the gate spacer; after forming the protective layer, removing the first interlayer dielectric layer to expose a sidewall of the gate spacer and a sidewall of the protective layer; and forming a bottom conductive feature over the source/drain region.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Jia-Chuan Chia-Hao Yu-Ming Wai-Yi
You Chang Lin Lien