IP & T Group LLP
Semiconductor device with silicon-containing hard mask and method for fabricating the same
A semiconductor device includes a semiconductor substrate having an etch target layer provided on the surface thereof, and a hard mask layer formed over the etch target layer and including silicon, wherein the hard mask layer includes a dual structure including a first area and a second area having a larger etch rate than the first area, in order to increase an etching selectivity of the hard mask layer.
SK Hynix Inc.
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Sung-Kwon Young-Kyun Jun-Hyeub
Lee Jung Sun