Michael J. Chang, LLC
Photovoltaic device based on Ag2ZnSn(S,Se)4 absorber
Photovoltaic devices based on an Ag2ZnSn(S,Se)4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.
International Business Machines Corporation
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Supratik Yun Seog Oki Talia S. Richard A.
Guha Lee Gunawan Gershon Haight