McDermott Will & Emery LLP
Semiconductor device and manufacturing method thereof
In a method of manufacturing a negative capacitance structure, a dielectric layer is formed over a substrate. A first metallic layer is formed over the dielectric layer. After the first metallic layer is formed, an annealing operation is performed, followed by a cooling operation. A second metallic layer is formed. After the cooling operation, the dielectric layer becomes a ferroelectric dielectric layer including an orthorhombic crystal phase. The first metallic film includes a oriented crystalline layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Ling-Yen Carlos H. Chih-Sheng Chun-Chieh Cheng-Yi
Yeh Diaz Chang Lu Peng