Anova Law Group, PLLC
Fin field-effect transistor and fabrication method thereof
The present disclosure provides FinFET structures and fabrication methods thereof. An exemplary fabrication method includes providing a substrate having a first region and a second region; forming a first well region in first region and a second well region in the second region; forming at least one first fin in the first region and at least one second fin in the second region; forming a first doped layer covering the first fin; forming a second doped layer covering the second fin; forming first doped sidewall spacers on side surfaces of the first fin and second doped sidewall spacers on side surfaces of the second fin by a mask-less etching process; and performing a thermal annealing process to the first doped sidewall spacers and the second doped sidewall spacers to form a third well region in the first fin and a fourth well region in the second fin, respectively.
Semiconductor Manufacturing International (Shanghai) Corporation Semiconductor Manufacturing International (Beijing) Corporation
H H H H H H
H01L H01L H01L H01L H01L H01L
inventional additional inventional inventional inventional inventional
Yong
Li