Patterson & Sheridan, LLP
Semiconductor device
According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductive type, and a periodic array structure having a second semiconductor layer of a first conductive type and a third semiconductor layer of a second conductive type periodically arrayed on the first semiconductor layer in a direction parallel with a major surface of the first semiconductor layer. The second semiconductor layer and the third semiconductor layer are disposed in dots on the first semiconductor layer. A periodic structure in the outermost peripheral portion of the periodic array structure is different from a periodic structure of the periodic array structure in a portion other than the outermost peripheral portion.
Kabushiki Kaisha Toshiba
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Wataru Miho Hiroaki Toshiyuki Shunji Syotaro
Saito Watanabe Yamashita Naka Taniuchi Ono