Birch, Stewart, Kolasch & Birch LLP
Semiconductor devices having a gate field plate including an extension portion and methods for fabricating the semiconductor device
A semiconductor device includes a compound semiconductor layer disposed over a substrate, a protection layer disposed over the compound semiconductor layer, and a source electrode, a drain electrode and a gate electrode which penetrate through the protection layer and are disposed on the compound semiconductor layer. The semiconductor device also includes a gate field plate connecting the gate electrode and disposed over a portion of the protection layer between the gate electrode and the drain electrode. The gate field plate has an extension portion extending into the protection layer.
Vanguard International Semiconductor Corporation
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Chia-Hao Chang-Xiang Chih-Cherng Manoj
Lee Hung Liao Kumar