Lowe Hauptman & Ham, LLP
Method for fabricating a gate dielectric layer
A method for fabricating the gate dielectric layer comprises forming a high-k dielectric layer over a substrate; forming an oxygen-containing layer on the high-k dielectric layer by an atomic layer deposition process; and performing an inert plasma treatment on the oxygen-containing layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Da-Yuan Wei-Yang Xiong-Fei Kuang-Yuan Jian-Hao Cheng-Hao
Lee Lee Yu Hsu Chen Hou