Marshall, Gerstein, & Borun.
Method for manufacturing a floating gate in a flash memory device
There is disclosed a method of manufacturing a floating gate in a flash memory device. In order to minimize the distance between floating gates, the method includes patterning a polysilicon film using a first PSG pattern in which a second PSG spacer is formed on and at the sidewall of the polysilicon film, and removing the first PSG film pattern and the second PSG film spacer using 50:1 HF or 9:1 BOE. Therefore, it can minimize the size of the device without damaging a polysilicon film and a field oxide.
Hyundai Electronics Industries Co., Ltd.
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inventional inventional inventional
Sang Bum Jum Soo Sung Mun
Lee Kim Jung