Slater Matsil, LLP
Methods for controlling an end-to-end distance in semiconductor device
Embodiments of the present disclosure may be used for patterning a layer in a 5 nm node or beyond fabrication to achieve an end-to-end distance below 35 nm. Compared to the state of the art technology, embodiments of the present disclosure reduce cycle time and cost of production from three lithographic processes and four etching processes to one lithographic process and three etch processes.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Huan-Just Cheng-Hua Huang-Ming Tsai-Chun Yu-Lien Yang-Cheng
Lin Yang Chen Li Huang Wu