Heslin Rothenberg Farley & Mesiti P.C.
Reducing gate expansion after source and drain implant in gate last process
A semiconductor structure includes a semiconductor substrate, an active region and a dummy gate structure disposed over the active region. A sacrificial conformal layer, including a bottom oxide layer and a top nitride layer are provided over the dummy gate structure and active region to protect the dummy gate during source and drain implantation. The active region is implanted using dopants such as, a n-type dopant or a p-type dopant to create a source region and a drain region in the active region, after which the sacrificial conformal layer is removed.
GLOBALFOUNDRIES Inc.
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Bharat Zhao Bongki Jinping Hui
Krishnan Lun Lee Liu Zhan