WPAT, PC
Semiconductor light-emitting device
A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a buffer layer, a light-emitting layer, a first-conductivity semiconductor layer, a first light reflecting layer, a protective structure, and an adhesive layer. The first-conductivity semiconductor layer is disposed between the buffer layer and a first side of the light-emitting layer. The first light reflecting layer is disposed between the first-conductivity semiconductor layer and the buffer layer. The protective structure is disposed between the first reflecting layer and the buffer layer. The adhesive layer is disposed between the first-conductivity semiconductor layer and the protective structure.
High Power Opto. Inc.
H H H H
H01L H01L H01L H01L
inventional inventional additional additional
Li-Ping Fu-Bang Chih-Sung Wei-Yu
Chou Chen Chang Yen