Fish & Richardson P.C.
Memory device, memory module and electronic device
The first transistor includes first and second electrodes which are a source and a drain, and a first gate electrode overlapping with a first channel formation region with an insulating film provided therebetween. The second transistor includes third and fourth electrodes which are a source and a drain, and a second channel formation region which is provided between a second gate electrode and a third gate electrode with insulating films provided between the second channel formation region and the second gate electrode and between the second channel formation region and the third gate electrode. The first and second channel formation regions contain an oxide semiconductor, and the second electrode is connected to the second gate electrode.
Semiconductor Energy Laboratory Co., Ltd.
H G H
H01L G11C H01L
inventional inventional inventional
Kiyoshi Jun Shunpei Toshihiko
Kato Koyama Yamazaki Saito