Haynes and Boone, LLP
Multi-composition dielectric for semiconductor device
The present disclosure provides a method of semiconductor device fabrication including forming a multi-composition ILD layer by forming a first portion of an inter-layer dielectric (ILD) layer on a semiconductor substrate; and forming a second portion of an ILD layer on the first portion of the ILD layer. The second portion may have a greater silicon content than the first portion. For example, the second portion may be a silicon rich oxide.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chun-Yi Ziwei Ming-Feng Su-Hao Sheng-Wen
Chang Fang Lin Liu Yu