Slater Matsil, LLP
Integrated circuit using deep trench through silicon (DTS)
An embodiment radio frequency area of an integrated circuit is disclosed. The radio frequency area includes a substrate having an implant region. The substrate has a first resistance. A buried oxide layer is disposed over the substrate and an interface layer is disposed between the substrate and the buried oxide layer. The interface layer has a second resistance lower than the first resistance. A silicon layer is disposed over the buried oxide layer and an interlevel dielectric is disposed in a deep trench. The deep trench extends through the silicon layer, the buried oxide layer, and the interface layer over the implant region. The deep trench may also extend through a polysilicon layer disposed over the silicon layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Tsung-Yu Chih-Ping Kuan-Chi Chung-Long Yu Hung Kuo-Yu Chen-Yao Wei-Kung Chun-Hong
Yang Chao Tsai Chang Chen Cheng Tang Tsai Chen