Haynes Beffel & Wolfeld LLP
Dynamic program and read adjustment for multi-level cell memory array
A method for operating a multi-level cell (“MLC”) memory array of an integrated circuit (“IC”) programs first data into a first plurality of MLCs in the MLC memory array at a first programming level. Threshold voltages for the first plurality of MLCs are sensed, and an adjust code is set according to the threshold voltages. Second data is programmed into a second plurality of MLCs in the MLC memory array at a second programming level, the second plurality of MLCs having a program-verify value set according to the adjust code. In a further embodiment, a reference voltage for reading the second plurality of MLCs is set according to the adjust code.
Macronix International Co., Ltd.
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Kuen-Long Chin Hung Wen Chiao Chun Hsiung
Chang Chang Ho Hung