Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Tunnel junction device having oxide ferromagnetic electroconductive electrodes and three-layer structure tunneling film
To provide a tunnel junction device having a high MR ratio even at room temperature, a tunneling film as a nonmagnetic layer of three-layer structure of LaMnO3/SrTiO3/LaMnO3 is arranged between a ferromagnetic metal material La0.6Sr0.4MnO3 (12) and a ferromagnetic metal film material La0.6Sr0.4MnO3 (14). The tunneling film comprises two unit layers of LaMnO3 (13A) arranged on the ferromagnetic metal material La0.6Sr0.4MnO3 (12); five unit layers of SrTiO3 (13B); and two unit layers of LaMnO3 (13C) arranged at the interface between the SrTiO3 (13B) and the ferromagnetic metal film material La0.6Sr0.4MnO3 (14).
National Institute of Advanced Industrial Science and Technology Japan Science and Technology Agency
H G B H G
H01L G01R B82Y H01F G11B
inventional inventional inventional inventional inventional
Yoshio Hiroyuki Masashi Yoshihiro Yoshinori
Kaneko Yamada Kawasaki Ogawa Tokura