Slater & Matsil, L.L.P.
UV radiation recovery of image sensor
A method of an embodiment comprises forming a dielectric layer on a first side of an image sensor substrate, and exposing the dielectric layer to ultraviolet (UV) radiation. The image sensor substrate comprises a photo diode. A structure of an embodiment comprises a substrate and a charge-less dielectric. The substrate comprises a photo diode. The charge-less dielectric layer is on a first side of the substrate, and a total charge of the charge-less dielectric results in an average voltage drop of less than 0.2 V across the charge-less dielectric layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chun-Jung Shiu-Ko Tong-Her Chung-Ren
Chang JangJian Sher Sun