Staas & Halsey
Semiconductor memory device
 A semiconductor memory device comprises a transistor and a resistor. The transistor has negative differential resistance characteristics in an emitter current or a source current thereof. Therefore the semiconductor memory device has few elements and a simplified configuration, and thus high speed operation and large scale integration can be realized. Further, in the semiconductor memory device of the present invention, several variations in design are possible. 
Fujitsu Limited
B G G
B82Y G11C G11C
inventional inventional additional
Toshihiko
Mori