Eschweiler & Potashnik, LLC
Photodiode gate dielectric protection layer
In some embodiments, the present disclosure relates to a method of forming an integrated chip. The method is performed by forming a gate dielectric layer over a substrate, and selectively forming a gate material over the gate dielectric layer. A gate dielectric protection layer is formed over the gate dielectric layer, and a first sidewall spacer is formed over the gate dielectric protection layer and flanking a side of the gate material. The gate dielectric protection layer continuously extends from between the first sidewall spacer and the gate dielectric layer to outside of the first sidewall spacer.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H H H H
H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional
Jiech-Fun Wen-I Yeur-Luen Tsun-Kai Cheng-Hsien Chih-Yu
Lu Hsu Tu Tsao Chou Lai