WPAT, P.C., Intellectual Property Attorneys
Semiconductor mixed gate structure
A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, a fin structure, a metal gate and a first polysilicon strip. The fin structure is on the substrate. The metal gate is over the fin structure and is substantially perpendicular to the fin structure. The first polysilicon strip is at a first edge of the fin structure and is substantially parallel to the metal gate.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Chih-Fu Tsung-Che Sheng Chiang
Chang Lu Hung