Slater Matsil, LLP
One transistor and one resistive random access memory (RRAM) structure with spacer
The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a top portion, a resistive material layer on the bottom electrode having a width that is same as a width of the top portion of the bottom electrode; a capping layer over the bottom electrode; a spacer surrounding the capping layer; and, a top electrode on the capping layer having a smaller width than the resistive material layer. The RRAM cell further includes a conductive material connecting the top electrode of the RRAM structure to a metal layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Yu-Wen Wen-Ting Chin-Chieh Kuo-Chi Hsia-Wei Chih-Yang
Liao Chu Yang Tu Chen Chang