Jones Day
Transistor with asymmetric source and drain regions
Semiconductor structures and methods for forming a semiconductor structure are provided. An active semiconductor region is disposed in a substrate. A gate is formed over the substrate. Source and drain regions of a transistor are formed in the active semiconductor region on opposite sides of the gate. The drain region has a first width, and the source region has a second width that is not equal to the first width.
Taiwan Semiconductor Manufacturing Company Limited
H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Ho-Hsiang Hua-Chou Chien-Chih Ru-Gun Hsien-Yuan Tzu-Jin Chi-Hsien Ying-Ta
Chen Tseng Ho Liu Liao Yeh Lin Lu