Amerson Law Firm, PLLC
Method for forming single diffusion breaks between finFET devices and the resulting devices
A method includes forming a first hard mask layer above a substrate. The first hard mask layer is patterned to define a plurality of fin openings and at least a first diffusion break opening. A first etch process is performed to define a plurality of fins in the substrate and a first diffusion break recess in a selected fin. A first dielectric layer is formed between the fins and in the first diffusion break recess to define a first diffusion break. A second hard mask layer having a second opening positioned above the first diffusion break is formed above the first hard mask layer and the first dielectric layer. A second dielectric layer is formed in the second opening. The second hard mask layer is removed. A second etch process is performed to recess the first dielectric layer to expose upper portions of the plurality of fins.
GLOBALFOUNDRIES Inc.
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Jiehui Hui Hong Jinping
Shu Zang Yu Liu