Haynes Beffel & Wolfeld LLP
Method for manufacturing a resistor random access memory with a self-aligned air gap insulator
A memory device including a programmable resistive memory material is described along with methods for manufacturing the memory device. A memory device disclosed herein includes top and bottom electrodes and a multilayer stack disposed between the top and bottom electrodes. The multilayer stack includes a memory element comprising programmable resistive memory material and has a sidewall surface. An air gap is adjacent to the sidewall surface and self-aligned to the memory element.
Macronix International Co., Ltd.
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Kuang Yeu Erh Kun ChiaHua
Hsieh Lai Ho