Photoresist pattern trimming compositions and methods
Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I):wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; R2 is chosen from C1-C15 alkylene; and R3 is chosen from C1-C3 fluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.
Rohm and Haas Electronic Materials LLC
G G
G03F G03F
inventional inventional
Thomas A. Cheng-Bai Kevin Seung-Hyun Shintaro Cong Gerhard Wenyan
Estelle Xu Rowell Lee Yamada Liu Pohlers Yin