Myers Bigel & Sibley, P.A.
High-gain wide bandgap darlington transistors and related methods of fabrication
A packaged power electronic device includes a wide bandgap bipolar driver transistor having a base, a collector, and an emitter terminal, and a wide bandgap bipolar output transistor having a base, a collector, and an emitter terminal. The collector terminal of the output transistor is coupled to the collector terminal of the driver transistor, and the base terminal of the output transistor is coupled to the emitter terminal of the driver transistor to provide a Darlington pair. An area of the output transistor is at least 3 times greater than an area of the driver transistor in plan view. For example, an area ratio of the output transistor to the driver transistor may be between about 3:1 to about 5:1. Related devices and methods of fabrication are also discussed.
Cree, Inc.
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Anant K. Qingchun
Agarwal Zhang