Nixon Peabody LLP
Method of manufacturing a semiconductor film by plasma CVD using a noble gas and nitrogen
There is provided a technique for effectively removing a metallic element for promoting crystallization in a semiconductor film with a crystalline structure after the semiconductor film is obtained using the metallic element, to reduce a variation between elements. In a step of forming a gettering site, a plasma CVD method is used and a film formation is conducted using raw gas including monosilane, noble gas, and nitrogen to obtain a semiconductor film which includes the noble gas element at a high concentration, specifically, a concentration of 1×1020/cm3 to 1×1021/cm3 and has an amorphous structure, typically, an amorphous silicon film.
Semiconductor Energy Laboratory Co., Ltd.
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Noriyoshi Shunpei Taketomi Mitsuhiro
Suzuki Yamazaki Asami Ichijo