Ladas & Parry LLP
Method and apparatus for detecting semiconductor characterist variations
The present invention discloses a skew detection device which can detect a skew of a transistor changed due to a driving voltage, a size and a process variable. The skew detection device includes a first potential level generator for outputting a first voltage, a second potential level generator for outputting a second voltage, a first level shifter for receiving the first voltage and outputting a first shift voltage, a second level shifter for receiving the second voltage and outputting a second shift voltage, and a comparator for comparing the first shift voltage with the second shift voltage. The first voltage is determined according to a drain-source current of a first MOS transistor operated in a linear region, and the second voltage is determined according to a drain-source current of a second MOS transistor operated in a saturation region.
Hynix Semiconductor Inc.
G G
G01R G01R
inventional additional
Jun Gi
Choi