Haynes and Boone, LLP
Contacts for highly scaled transistors
A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional additional inventional additional inventional inventional inventional additional inventional inventional inventional inventional
Chung-Cheng Chia-Hao Wai-Yi Chun-Hsiung Carlos H. Ying-Keung Chih-Hao Jean-Pierre
Wu Chang Lien Lin Diaz Leung Wang Colinge