Patterson and Sheridan
Method of chemical mechanical polishing with high throughput and low dishing
Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.
Applied Materials, Inc.
H B B H
H01L B24B B24B H01L
inventional inventional inventional inventional
Fred C. Shi-Ping Jui-Lung Shijian Gary David
Redeker Wang Li Li Lam Mai