Slater & Matsil, L.L.P.
Hybrid Schottky source-drain CMOS for high mobility and low barrier
A CMOS device is provided. A semiconductor device comprises a substrate, the substrate having a first region and a second region, the first region having a first crystal orientation represented by a family of Miller indices comprising {i,j,k}, the second region having a second crystal orientation represented a family of Miller indices comprising {l,m,n}, wherein l2+m2+n2>i2+j2+k2. Alternative embodiments further comprise an NMOSFET formed on the first region, and a PMOSFET formed on the second region. Embodiments further comprise a Schottky contact formed with at least one of a the NMOSFET or PMOSFET.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chih-Hsin Wen-Chin Chung-Hu Hung-Wei Min-Hwa
Ko Lee Ke Chen Chi