Slater & Matsil, L.L.P.
Resistors formed based on metal-oxide-semiconductor structures
A device includes a metal-oxide-semiconductor (MOS) device, which includes a gate electrode and a source/drain region adjacent the gate electrode. A first and a second contact plug are formed directly over and electrically connected to two portions of a same MOS component, wherein the same MOS component is one of the gate electrode and the source/drain region. The same MOS component is configured to be used as a resistor that is connected between the first and the second contact plugs.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H
H01L H01L
additional inventional
Chen-Chih Wen-Han Kuo-Ji Sheng-Fang
Wu Wang Chen Cheng