Moser IP Law Group
Plasma control using dual cathode frequency mixing
A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.
Applied Materials, Inc.
H H
H01J H01J
inventional inventional
Michael G. Troy S. Taeho Steven C. Alexander Jingbao Dennis S. Theodoros Bryan Y. Daniel J.
Chafin Detrick Shin Shannon Paterson Liu Grimard Panagopoulos Pu Hoffman