Morison & Foerster LLP
Semiconductor memory device, method for driving the same and portable electronic apparatus
A method for driving a semiconductor memory device includes a memory array having a plurality of memory cells arranged in rows and columns. Each memory cell includes a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed below the gate electrode, a source and a drain as diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional units formed on both sides of the gate electrode and having a function of retaining charges. The method includes the steps of: selecting a row line connected to the gate electrode of a memory cell to be selected; grounding a first column line connected to the source of the memory cell to be selected; and applying a first potential to a second column line and a second potential to a third column line at the same time.
Sharp Kabushiki Kaisha
H G H H H G
H01L G11C H01L H01L H01L G11C
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Yoshinao Hiroshi Kohji Akihide Nobuaki Masaru
Morikawa Iwata Hamaguchi Shibata Matsuoka Nawaki