Semiconductor sensing device and method for fabricating the same
 A semiconductor sensing device (10) for sensing a lateral acceleration includes a field effect transistor (132) fabricated along a sidewall (114) of a trench (112) formed in a substrate (11). A movable gate (12) overlies a channel region (138) of the field effect transistor (132). In response to a lateral acceleration perpendicular to the sidewall (114) of the trench (112), the movable gate (12) moves relative to the substrate (11) in a direction substantially perpendicular to the sidewall (114). The conductive state of the channel region (138) depends on the distance between the movable gate (12) and the channel region (138) and changes in response to the lateral acceleration Thus, the motion of the movable gate (12) modulates a current flowing in the field effect transistor (132). The lateral acceleration is sensed by sensing the current flowing in the field effect transistor (132). 
Motorola, Inc.
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inventional inventional inventional inventional
Zuoying Lisa Shang-Hui Larry Guang Xuan
Zhang Tu Li