Carmen B. Patti & Assoc., LLC
Method for etching mesa isolation in antimony-based compound semiconductor structures
Antimony-based semiconductor devices are formed over a substrate structure (10) that includes an antimony-based buffer layer (24) and an antimony-based buffer cap (26). Multiple epitaxial layers (30–42) formed over the substrate structure (10) are dry etched to form device mesas (12) and the buffer cap (26) provides a desirably smooth mesa floor and electrical isolation around the mesas.
Northrop Grumman Corporation
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Roger S. Peter S. Michael D.
Tsai Nam Lange