Hauptman Ham, LLP
Memory circuit and method of programming memory circuit
A method includes applying a first voltage setting to a first node and a second node of a selected memory cell for a first predetermined period of time in response to a command for programming a first logical state to the selected memory cell. A first stored logical state of the selected memory cell is obtained after the applying the first voltage setting operation. If the first stored logical state differs from the first logical state, a second voltage setting is applied to the first node and the second node of the selected memory cell; and a first retrial is performed. The first retrial includes applying the first voltage setting to the first node and the second node of the selected memory cell for the first predetermined period of time.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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inventional inventional additional inventional inventional
Chih-Yang Wen-Ting Tassa Yi-Chieh
Chang Chu Yang Chiu