McGinn IP Law Group, PLLC
Semiconductor device including conductor patterns as electrodes of a capacitive element and manufacturing method thereof
The present invention is capable of suppressing a variation in the characteristics of a semiconductor device. In a conductor pattern CPA and a conductor pattern CPB arranged so as to run side by side with each other, the conductor pattern CPA is divided into a first portion P1 (A) and a second portion P2 (A), and the conductor pattern CPB is also divided into a first portion P1 (B) and a second portion P2 (B). The first portion P1 (A) of the conductor pattern CPA and the second portion P2 (B) of the conductor pattern CPB are formed by first patterning using the same first mask, while the second portion P2 (A) of the conductor pattern CPA and the first portion P1 (B) of the conductor pattern CPB are formed by second patterning using the same second mask.
RENESAS ELECTRONICS CORPORATION
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Tetsuya
Watanabe