Oblon, McClelland, Maier & Neustadt, L.L.P.
Semiconductor device
According to one embodiment, a semiconductor device includes first and second electrodes, first, second, third, fourth, fifth, sixth and seventh semiconductor regions, and a gate electrode. The first semiconductor region is provided on the first electrode. The second semiconductor region is provided on a portion of the first semiconductor region. The third semiconductor region is provided on another portion of the first semiconductor region. The fourth semiconductor region is provided in at least a portion between the first and third semiconductor regions. The fifth semiconductor region is provided between the first and fourth semiconductor regions. The sixth semiconductor region is provided on the third semiconductor region. The seventh semiconductor region is provided selectively on the sixth semiconductor region. The gate electrode opposes the second, sixth, and seventh semiconductor regions. The second electrode is provided on the sixth and seventh semiconductor regions.
KABUSHIKI KAISHA TOSHIBA TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
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Hiroaki Syotaro Hiroshi Hideto Hisao
Yamashita Ono Ohta Sugawara Ichijo