High voltage metal-oxide-semiconductor transistor device
A high voltage metal-oxide-semiconductor transistor device includes a substrate, at least an isolation structure formed in the substrate, a gate formed on the substrate, and a source region and a drain region formed in the substrate at respective sides of the gate. The isolation structure further includes a recess. The gate includes a first gate portion formed on a surface of the substrate and a second gate portion downwardly extending from the first gate portion and formed in the recess.
United Microelectronics Corp.
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Chiu-Te Chih-Chien Wei-Lin Chih-Chung Ke-Feng
Lee Chang Chen Wang Lin