Volentine & Whitt, PLLC
CMOS transistor and method of manufacturing the same
A CMOS transistor structure and related method of manufacture are disclosed in which a first conductivity type MOS transistor comprises an enhancer and a second conductivity type MOS transistor comprises a second spacer formed of the same material as the enhancer. The second conductivity type MOS transistor also comprises a source/drain region formed in relation to an epitaxial layer formed in a recess region.
Samsung Electronics Co., Ltd.
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Young-eun Yu-gyun Jong-wook Young-pil Seong-ghil
Lee Shin Lee Kim Lee