Patterson + Sheridan LLP
PECVD process
A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
APPLIED MATERIALS, INC.
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Edward Xinhai Thomas Michael Wenyoung Patrick Jeongmin Bok Hoen Shahid Heung Lak Terrance Y. Juan Carlos Sergey Zhijun Ramprakash Masaki Dmitriy Ganesh Jian J. Mohamad A. Amit Kumar Nagarajan Jianhua Todd
Budiarto Han Nowak Tsiang Reilly Lee Kim Shaikh Park Lee Rocha-Alvarez Starik Jiang Sankarakrishnan Ogata Panasyuk Balasubramanian Chen Ayoub Bansal Rajagopalan Zhou Egan