Duane Morris LLP
Chemical direct pattern plating interconnect metallization and metal structure produced by the same
A semiconductor structure with an improved metal structure is described. The semiconductor structure can include a substrate having an upper surface, an interconnect layer over the upper surface, and an additional structure deposited over the interconnect layer. The interconnect layer can include a patterned seed layer over the substrate, at least two metal lines over the seed layer, and a dielectric material between adjacent metal lines. A barrier layer can be deposited over the at least two metal lines. Methods of making the semiconductor structures are also described.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chen-Yuan Syun-Ming Mingh-Hsing Wen-Jiun Hung-Wen
Kao Jang Tsai Liu Su