McDermott, Will & Emery LLP
Semiconductor light emitting device and manufacturing method thereof
A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices.
SAMSUNG ELECTRONICS CO., LTD.
H H
H01L H01L
inventional inventional
Seung Hwan Yung Ho Yong Il Su Min Tae Sung Tae Hun Myeong Rak Sung Joon Su Yeol
Lee Ryu Kim Hwangbo Jang Kim Son Kim Lee