Myers Bigel Sibley & Sajovec, P.A.
Integrated circuit devices that utilize doped Poly-Si1&#8722;xGex conductive plugs as interconnects
The present invention provides an integrated circuit device that include a semiconductor substrate having a semiconductor region of first conductivity type therein extending adjacent the surface of the substrate. The device further includes an electrically insulating layer with a contact hole in it that exposes the semiconductor region of first conductivity type on the surface of the semiconductor substrate. The device still further includes a poly-Si1&#8722;xGex conductive plug of first conductivity type that extends in the contact hole and is electrically connected to the semiconductor region of first conductivity type is provided.
Samsung Electronics Co., Ltd.
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Dong-chan Yeong-kwan Sang-jeong Seung-hwan Young-wook
Kim Kim Oh Lee Park