Slater Matsil, LLP
Metal contact structure and method of forming the same in a semiconductor device
A semiconductor device and method of formation are provided. The semiconductor device comprises a silicide layer over a substrate, a metal plug in an opening defined by a dielectric layer over the substrate, a first metal layer between the metal plug and the dielectric layer and between the metal plug and the silicide layer, a second metal layer over the first metal layer, and an amorphous layer between the first metal layer and the second metal layer.
Taiwan Semiconductor Manufacturing Company
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Yu-Hung Sheng-Hsuan Chih-Wei You-Hua
Lin Lin Chang Chou