Beyer Law Group LLP
High pressure bevel etch process
A method of bevel edge processing a semiconductor in a bevel plasma processing chamber in which the semiconductor substrate is supported on a semiconductor substrate support is provided. The method comprises evacuating the bevel etcher to a pressure of 3 to 100 Torr and maintaining RF voltage under a threshold value; flowing a process gas into the bevel plasma processing chamber; energizing the process gas into a plasma at a periphery of the semiconductor substrate; and bevel processing the semiconductor substrate with the plasma.
Lam Research Corporation
H H H H H H H
H01L H01L H01J H01L H01J H01L H01L
inventional inventional inventional inventional inventional inventional inventional
Andreas Yunsang S. Tong
Fischer Kim Fang