NSIP Law
Nonvolatile memory device
A nonvolatile memory device includes a cell array formed on a substrate, and a control gate pickup structure, wherein the cell array comprises floating gates, and a control gate surrounding the floating gates, wherein the control gate pickup structure comprises a floating gate polysilicon layer, a control gate polysilicon layer surrounding the floating gate polysilicon layer and connected to the control gate, and at least one contact plug formed on the control gate polysilicon layer.
KEY FOUNDRY CO., LTD.
G G H H H H
G11C G11C H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional
Min Kuck Seung Hoon
Cho Lee