Fitzpatrick, Cella, Harper & Scinto
Method for continuously manufacturing a semiconductor device
 An apparatus continuously manufactures a semiconductor device. A plurality of glow discharge regions are connected by gas gates. An enough long belt-shaped substrate having a desired width is arranged along a path in which the substrate sequentially penetrates the glow discharge regions. The belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a semiconductor layer of a conductivity type which is needed in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction. A plurality of rotatable rollers are arranged in a slit-shaped separating passage of the gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers. 
Canon Kabushiki Kaisha
Y C C
Y10S C23C C23C
additional inventional inventional
Takehito Yuzo Masahiro Takashi Masafumi Yasushi
Yoshino Kohda Kanai Kurokawa Sano Fujioka