Kilpatrick Townsend & Stockton LLP
Etching high K dielectrics with high selectivity to oxide containing layers at elevated temperatures with BC13 based etch chemistries
Wafers having a high K dielectric layer and an oxide or nitride containing layer are etched in an inductively coupled plasma processing chamber by applying a source power to generate an inductively coupled plasma, introducing into the chamber a gas including BCl3, setting the temperature of the wafer to be between 100° C. and 350° C., and etching the wafer with a selectivity of high K dielectric to oxide or nitride greater than 10:1. Wafers having an oxide layer and a nitride layer are etched in a reactive ion etch processing chamber by applying a bias power to the wafer, introducing into the chamber a gas including BCl3, setting the temperature of the wafer to be between 20° C. and 200° C., and etching the wafer with an oxide to nitride selectivity greater than 10:1. Wafers having an oxide layer and a nitride layer are etched in a an inductively coupled plasma processing chamber by applying a bias power to the wafer, applying a source power to generate an inductively coupled plasma, introducing into the chamber a gas including BCl3, setting the temperature of the wafer to be between 20° C. and 200° C., and etching the wafer with an oxide to nitride selectivity greater than 10:1.
Applied Materials, Inc.
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Nicolas Meihua Radhika Wei Shashank C.
Gani Shen Mani Liu Deshmukh