Staas & Halsey
High speed optosemiconductor device having multiple quantum wells
 In an optosemiconductor device including a superlattice configuration (TBQ) of first and second quantum well layers and a potential barrier therebetween, photo-excited carriers are formed in the first quantum well layer and are tunnelled through the potential barrier toward the second quantum well layer, so that the tunneled carriers are accumulated in the second quantum well layer. An electric field is applied to the superlattice configuration to expel the tunneled carriers from the second quantum well layer. 
Fujitsu Limited
G H Y G H B
G02F H01L Y02E G02F H01L B82Y
inventional inventional additional inventional inventional inventional
Toshio Yoshihiro Shunichi Hideaki
Fujii Sugiyama Muto Ishikawa