Myers Bigel & Sibley, P.A.
Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials
A transistor may include a semiconductor drift layer of a first semiconductor material and a semiconductor channel layer on the semiconductor drift layer. The semiconductor channel layer may include a second semiconductor material different than the first semiconductor material. A semiconductor interconnection layer may be electrically coupled between the semiconductor drift layer and the semiconductor channel layer, and the semiconductor interconnection layer may include a third semiconductor material different than the first and second semiconductor materials. In addition, a control electrode may be provided on the semiconductor channel layer.
Cree, Inc.
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Anant K. Sarit Sei-Hyung Qingchun
Agarwal Dhar Ryu Zhang