Slater Matsil, LLP
Method of forming a contact with a silicide region
Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Wei-Yip Cheng-Tung Yan-Ming Wei-Jung Yu-Wen Ming-Hsing Hung-Hsu Ya-Yi Chih-Wei Hong-Mao Yu-Shiuan Sheng-Hsuan
Loh Lin Tsai Lin Cheng Tsai Chen Cheng Chang Lee Wang Lin