Sughrue, Mion, Zinn, Macpeak & Seas, PLLC
Method of fabricating an epitaxial wafer
 There is provided a high quality epitaxial water on which the density of microscopic defects in the epitaxial layer is reduced to keep the GOI thereof sufficiently high and to reduce a leakage current at the P-N junction thereof when devices are incorporated, to thereby improve the yield of such devices. In an epitaxial wafer obtained by forming an epitaxial layer on a substrate, the density of IR laser scatterers is 5.times.10.sup.5 pieces/cm.sup.3 or less throughout the epitaxial layer. 
Komatsu Electronic Metals Co., Ltd.
C C Y C Y
C30B C30B Y10S C30B Y10S
inventional inventional additional inventional additional
Mitsuo Masashi Noriyuki Hisami
Kohno Nishimura Uemura Motoura