Muir Patent Law, PLLC
Image sensors having a reduced settling time
Image sensors are provided including a structure capable of settling an output voltage within a very short time for implementing a high-speed image sensor. The image sensor includes a pixel area, in which a photo-diode (PD) and a transfer transistor (Tr) configured to transmit charges accumulated in the PD to a floating diffusion (FD) area are disposed; and a Tr area, which is disposed adjacent to the pixel area and includes a first Tr, a second Tr, and a third Tr, wherein a first gate oxide film disposed below a first gate electrode of the first Tr and a second gate oxide film disposed below a second gate electrode of the second Tr include channel oxide films thinner than a gate oxide film of the transfer Tr.
SAMSUNG ELECTRONICS CO., LTD.
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inventional inventional additional additional inventional inventional inventional
Seung-Sik Hyuk-Soon Jae-Kyu
Kim Choi Lee