McClure, Qualey & Rodack, LLP
Method of forming funnel-like opening for semiconductor device structure
A method of forming a semiconductor device structure is provided. The method includes successively forming first and second hard mask layers over a trench pattern region of a material layer. The second hard mask layer has a first tapered opening corresponding to a portion of the trench pattern region and a passivation spacer is formed on a sidewall of the first tapered opening to form a second tapered opening therein. The method also includes forming a third tapered opening below the second tapered opening and removing a portion of the passivation spacer in a first etching process. The method also includes forming a vertical opening in the first hard mask layer below the bottom of the third tapered opening in a second etching process. The vertical opening has a width that is substantially equal to a bottom width of the third tapered opening.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Yun-Yu Tai-Yen Jiann-Horng Ying-Hao Chih-Hao Chao-Kuei
Chen Peng Lin Wu Chen Yeh