Birch, Stewart, Kolasch & Birch, LLP
Methods of fabricating semiconductor devices with gate-all-around structure
A method of fabricating semiconductor devices is provided. The method includes forming a fin protruding from a substrate, and forming a disposable mandrel fin on the fin. The method also includes epitaxially growing channel fins on sidewalls of the disposable mandrel fin. The method further includes removing the disposable mandrel fin to form a space between the channel fins, and forming a gate structure to fill the space between the channel fins and to wrap the channel fins. In addition, the method includes forming source and drain structures on opposite sides of the gate structure.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chih-Hao Chun-Hsiung Pei-Hsun Chih-Chao
Wang Lin Wang Chou