Schwabe, Williamson & Wyatt, P.C.
Group III-nitride integrated front-end circuit
An apparatus, an integrated circuit die, and a method of fabricating a group III-nitride (III-N) integrated RF front-end circuit are disclosed. The apparatus includes a III-N integrated radio frequency (RF) front-end circuit that includes a semiconductor substrate, a plurality of functional blocks, each of the plurality of functional blocks comprising a III-N structure on the semiconductor substrate. The III-N integrated RF front-end circuit is to be coupled to an antenna.
Intel Corporation
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Han Wui Sansaptak Marko
Then Dasgupta Radosavljevic