Ratner & Prestia
Semiconductor device and a method of fabricating the same
 A semiconductor device of the present invention includes a semiconductor substrate, a p-type impurity diffused region formed in the semiconductor substrate, and a polycide interconnection electrically connected to the p-type impurity diffused region. In the semiconductor device, the polycide interconnection includes a first polysilicon film, a refractory metal silicide film formed on the first polysilicon film, and a second polysilicon film formed on the refractory metal silicide film. 
Matsushita Electric Industrial Co., Ltd.
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Toyokazu Yasushi
Fujii Naito