Photoresist cleaning composition used in photolithography and a method for treating substrate therewith
It is disclosed a photoresist cleaning composition for stripping a photoresist pattern having a film thickness of 3-150 μm, which contains (a) quaternary ammonium hydroxide (b) a mixture of water-soluble organic solvents (c) at least one corrosion inhibitor and (d) water, and a method for treating a substrate therewith.
VERSUM MATERIALS US, LLC
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Tianniu Hsiu Mei Gene Everad Ling-Jen Wen Dar Yi-Chia Ryback Li Chang Randy Li-Kai Laura M.
Chen Chen Parris Meng Liu Lee Lo Chang Matz