H.C. Park & Associates, PLC
Etchant composition and method of manufacturing a thin film transistor substrate by using the same
An etchant composition includes an etchant composition that includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.1 wt % to about 10 wt % of an aliphatic sulfonic acid, about 1 wt % to about 20 wt % of an organic acid or an organic acid salt, and water based on a total weight of the etchant composition.
Dongwoo Fine-Chem Co., Ltd. Samsung Display Co., Ltd.
H C C H H C H
H01L C23F C23F H01L H01L C23F H01L
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Youngchul Soomin Inho Seungsoo Jongmun Daesung Youngjun Inseol Hongsick
Park An Yu Lee Lee Lim Kim Kuk Park