Townsend and Townsend and Crew LLP
Metal oxide semiconductor transistor and method for manufacturing the same
A metal oxide semiconductor (MOS) transistor includes a source region having at least one source contact; a drain region having at least one drain contact; and a gate provided between the source region and the drain region, wherein the number of source contacts included in the source region is different from the number of drain contacts included in the source region.
Hynix Semiconductor, Inc.
H H
H01L H01L
additional inventional
Hi-Hyun Jun-Gi
Han Choi