Jianq Chyun IP Office
Memory management method, memory storage device and memory control circuit unit
A memory management method, a memory storage device and a memory control circuit unit are provided. The memory management method includes: detecting a replacement physical unit number of a rewritable non-volatile memory module; adjusting an available capacity of the rewritable non-volatile memory module from a first available capacity to a second available capacity if the replacement physical unit number meets a default condition. Therefore, a lifespan of the memory storage device may be prolonged by adjusting the available capacity of the rewritable non-volatile memory module.
PHISON ELECTRONICS CORP.
G G G G G G
G06F G06F G06F G06F G06F G06F
additional inventional inventional inventional inventional inventional
Jiann-Mou
Chen