Foley & Lardner LLP
Semiconductor laser element
A semiconductor laser element includes: a light emitting layer of a nitride semiconductor that is placed above a substrate of GaN and has a refractive index higher than the substrate, wherein the semiconductor laser element further includes the following layers between the substrate and the light emitting layer in an order from the substrate: a first nitride semiconductor layer of AlGaN; a second nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer; a third nitride semiconductor layer of an InGaN; and a fourth nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer and having a thickness greater than the second nitride semiconductor layer.
NICHIA CORPORATION
H H H B H H H H H H
H01S H01S H01S B82Y H01S H01S H01S H01S H01S H01S
additional additional inventional inventional additional inventional additional inventional additional inventional
Takashi
Miyoshi