Patterson + Sheridan, LLP
III-V and Zn based finFET structure formed using low temperature deposition techniques
Aspects of the present disclosure include a semiconductor structure comprising a gate layer with an associated gate dielectric thereon, and a region comprising at least one fin structure in contact with the gate layer, wherein the fin structure includes at least two distinct materials, and wherein one of the two distinct materials is a Zn based material.
International Business Machines Corporation
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Brent A. Yun Seog Joel P. Devendra
Wacaser Lee De Souza Sadana