Carter, DeLuca, Farrell & Schmidt, LLP
Method for reducing contact resistance
Disclosed is a method for reducing contact resistance, including depositing a GST layer on an InGaAs substrate, generating an InGaAs/GST/Ni stacked structure by depositing a Ni layer on the GST layer, and thermally treating the stacked structure to rearrange components of the GST layer and to generate a Ni—InGaAs alloy.
THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY (IAC)
H H H H
H01L H01L H01L H01L
inventional inventional inventional inventional
Jeongchan Geon Ho Hi Deok Meng
Lee Shin Lee Li