Fleshner & Kim
Semiconductor device having spiral electrode pattern
 A semiconductor device having a spiral electrode pattern and fabrication method thereof. The device includes an undoped semiconductor substrate, a first and a second probing pads formed on the substrate, and a pair of electrode fingers extending spirally toward a concentric center from the respective first and second probing pads and interdigitated with each other. The method includes the steps of, patterning an insulation layer on a semiconductor substrate in a spiral structure, depositing a metal layer on the substrate including the insulation layer but excluding the sides of the insulation layer, and etching the insulation layer using a wet etching technique. 
LG Semicon Co., Ltd.
H
H01L
inventional
Seung-Ho
Lee