Fliesler Dubb Meyer & Lovejoy LLP
Process for fabricating a flash memory device
 A method for manufacturing a non-volatile memory device, the device having a core memory cell region and a periphery region, comprising the steps of: forming memory cell gate structures in the core memory cell region; forming active regions adjacent to the gate structure through a blanket implant; forming an implant/etch mask; implanting an impurity into one of the active regions; etching an oxide layer in the implant region; and forming active devices in the periphery region. In a further aspect, the method comprises method of performing a self aligned source etch in forming a memory device, comprising: forming resist spacers adjacent to the channel regions of the memory device; and etching the oxide layer. 
Advanced Micro Devices, Inc.
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Jian Yow-Juang William Gu Fung David
Chen Liu Tsuei