Magnetoresistive random access memory wherein number of memory cells in each string is equal to number of strings connected in parallel
A magnetic random access memory (MRAM) includes device strings coupled in parallel, each comprising magnetic tunnel junctions (MTJs) coupled in serial, wherein a quantity of the MTJs of each of the device strings is equal to a quantity of the device strings, and an equivalent resistance (Req) of the MTJs is equal to an average of the sum of a high resistance of one of the MTJs and a low resistance of another MTJ.
UNITED MICROELECTRONICS CORP.
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Kuo-Hsing Yi-Chung Chih-Kai Ting-Hsiang Sheng-Yuan
Lee Sheng Kang Huang Hsueh