Tung & Associates
Memory cell structure with trench capacitor and method for fabrication thereof
Within both a memory cell structure and a method for fabricating the memory cell structure there is employed a storage capacitor formed within a trench adjoining an active region of a semiconductor substrate. Within the memory cell structure and the method for fabrication thereof, both the active region of the semiconductor substrate and the trench are contained within a doped well within the semiconductor substrate.
Taiwan Semiconductor Manufacturing Co., Ltd
H H H Y H
H01L H01L H01L Y10S H01L
inventional additional inventional additional inventional
Chen-Jong Chung-Wei Kuo-Chyuan
Wang Chang Tzeng