Clipped sine shaped waveform to reduce the cycling-induced electron trapping in the tunneling oxide of flash EEPROM
 The present invention provides method to erase and program flash EEPROMS devices using a clipped sine waveform (Vg). The clipped sine waveform reduces the tunneling oxide electric field between the floating gate and the source or drain region thereby reducing electron trapping. The method for the erase cycle comprises: applying a positive voltage to a source region; grounding a well region; floating the drain region; and simultaneously applying a negative clipped sine waveform voltage to a control gate during the erase cycle. The program cycle of the invention comprises: applying a voltage to a drain region; grounding a well region; floating a source region; and simultaneously applying a clipped sine waveform voltage to the control gate whereby the clipped sine waveforms reduce the electric field in a tunnel oxide layer which reduces the electron trapping. 
Taiwan Semiconductor Manufacturing Company, Ltd.
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G11C G11C
inventional inventional
Juang-Ke Ming-Chou Kuo-Reay Jian-Hsing
Yeh Ho Peng Lee