Harness, Dickey & Pierce, PLC
Semiconductor integrated circuits having contacts spaced apart from active regions
First and second active regions are doped with different types of impurities, and extend in a first direction and spaced apart from each other in a second direction. First and third gate structures, which are on the first active region and a first portion of the isolation layer between the first and second active regions, extend in the second direction and are spaced apart from each other in the first direction. Second and fourth gate structures, which are on the second active region and the first portion, extend in the second direction, are spaced apart from each other in the first direction, and face and are spaced apart from the first and third gate structures, respectively, in the second direction. First to fourth contacts are on portions of the first to fourth gate structures, respectively. The first and fourth contacts are connected, and the second and third contacts are connected.
SAMSUNG ELECTRONICS CO., LTD.
H H H H
H01L H01L H03K H01L
inventional inventional additional inventional
Tae-Joong Jung-Han
Song Kim