Rabin & Champagne P.C.
Light-emitting diodes with high illumination
 A surface-emitting AlGaInP LED is disclosed. The LED uses a GaP layer as a window layer to eliminate the current crowding effect, or may has an ITO window layer and use GaP, instead of GaAs, as the substrate to eliminate the current-crowding effect and avoid the emitted light being absorbed by the substrate. The GaP layer is bonded to the double hetero-structure epitaxy layer by a wafer bonding technique. The present invention, however, provides a manufacturing procedure which is easier and more reliable to handle than prior arts. 
Industry Technology Research Institute
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Biing-Jye Ming-Jiunn Chia-Cheng Chuan-Ming Jinn-Kung Ming-Yung
Lee Jou Liu Chang Sheu Jow