Armstrong, Kratz, Quintos, Hanson & Brooks, LLP
Semiconductor capacitor with diffusion prevention layer
There is provided the capacitor which has the lower electrode having a structure in which the first conductive layer containing a first metal, the second conductive layer that is formed on the first conductive layer and made of the metal oxide of the second metal different from the first metal, and the third conductive layer that is formed on the second conductive layer and made of the third metal different from the first metal are formed sequentially; the dielectric layer formed on the lower electrode; and the upper electrode formed on the capacitor dielectric layer.
Fujitsu Limited
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H01L H01L H01L
additional additional inventional
Wensheng Mitsushi Ko
Wang Fujiki Nakamura