Law Offices of Ira D. Blecker, P.C.
Bulk silicon germanium FinFET
A bulk SiGe FinFET which includes: a plurality of SiGe fins and a bulk semiconductor substrate, the SiGe fins extending from the bulk semiconductor substrate; the SiGe fins having a top portion and a bottom portion, a part of the bottom portion being doped to form a punchthrough stop; the bulk semiconductor substrate having a top portion in contact with the SiGe fins and comprising a gradient of germanium and silicon, and a bottom portion of silicon in contact with the top portion such that the gradient has a composition of SiGe at the top portion in contact with the SiGe fins that is the same composition of SiGe as in the SiGe fins, the proportion of germanium atoms in the gradient gradually decreasing and the proportion of silicon atoms in the gradient gradually increasing in the gradient until the top portion contacts the bottom portion.
International Business Machines Corporation
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Shogo Juntao Kangguo
Mochizuki Li Cheng