F. Chau & Associates, LLC
Semiconductor device
A semiconductor device including: a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate pattern, wherein a dielectric constant of the first insulator is different from a dielectric constant of the second insulator, and wherein a height of the second insulator is greater than a height of the second gate pattern.
SAMSUNG ELECTRONICS CO., LTD.
H H H H H
H01L H01L H01L H01L H01L
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Seung-Jae Sang-Bom Yong-Ho Dae-Young Myeong-Cheol Jung-Chan
Lee Kang Jeon Kwak Kim Lee