Haynes and Boone, LLP
EBR shape of spin-on low-k material providing good film stacking
In accordance with the objectives of the invention a new method is provided to tune the Edge Bead Remove hump and to further prevent a pointed or tip shaped Edge Bead Remove edge, thus preventing peeling of the low-k dielectric film after the process of Chemical Mechanical Polishing of the low-k film.
Taiwan Semiconductor Manufacturing Company, Ltd.
H
H01L
inventional
Sung-Ming Yu-Huei Chen-Hua
Jang Chen Yu