Slater & Matsil, L.L.P.
Circuit and method for small swing memory signals
Circuits and methods for transmitting and receiving small swing differential voltage data to and from a memory are described. A plurality of memory cells is formed in arrays within a plurality of memory banks. Each memory bank is coupled to a pair of small swing differential voltage global bit lines that extend across the memory. A small signal write driver circuit is coupled to the global bit lines and configured to output a small signal differential voltage on the global bit lines during write cycles. A global sense amplifier is coupled to the global bit line pairs and configured to output a full swing voltage on a data line during a read cycle. Methods for providing small swing global bit line signals to memory cells are disclosed. The use of small swing differential voltage signals across the memory reduces power consumption and shortens memory cycle time.
Taiwan Semiconductor Manufacturing Co., Ltd.
G G
G11C G11C
inventional inventional
Ming-Zhang Yi-Tzu Chia-Wei Chung-Cheng
Kuo Chen Su Chou