Vierra Magen Marcus LLP
Two-stage ramp up of word line voltages in memory device to suppress read disturb
Techniques for reducing read disturb of memory cells. A discharge process reduces a channel gradient in a NAND string by using a two-step ramp up of adjacent word lines of the selected word line. The voltages of the adjacent word lines can be provided at an intermediate level while the selected word line voltage is spiked up to a read pass voltage and then decreased. The voltages of the adjacent word lines can then be increased from the intermediate level to a read pass voltage and maintained at that level during the sensing of the memory cells. The voltage of the selected word line is decreased from a read pass voltage to a positive control gate read voltage at the end of the discharge process.
SanDisk Technologies LLC
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Hong-Yan Wei Ching-Huang
Chen Zhao Lu