Myers Bigel, P.A.
Magnetic memory device
A magnetic memory device includes a buffer layer on a substrate, a magnetic tunnel junction structure including a fixed layer structure, a tunnel barrier, and a free layer that are sequentially arranged on the buffer layer, and a spin-orbit torque (SOT) structure on the magnetic tunnel junction structure and including a topological insulator material, wherein the free layer includes a Heusler material.
Samsung Electronics Co., Ltd.
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Joon-myoung Ju-hyun Eun-sun Woo-chang
Lee Kim Noh Lim