Fitzpatrick, Cella, Harper & Scinto
Electron device using oxide semiconductor and method of manufacturing the same
In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region provided between the plural thin film transistors and the semiconductor region are constituted by a same metal oxide layer, and resistance of the semiconductor region is formed to be lower than resistance of the device separation region.
Canon Kabushiki Kaisha
H H
H01L H01L
inventional inventional
Ryo Masafumi
Hayashi Sano