Methods of manufacturing a semiconductor structure
A method for testing TSVs is provided. A plurality of TSVs is formed in a semiconductor substrate. Wiring layers and a first contact array are formed on the front-side of the substrate. The wiring layers couple each of the TSVs to a respective contact of the first contact array. Conductive adhesive is deposited over the first contact array. The conductive adhesive electrically couples contacts of the first contact array. A carrier is bonded to the front-side of the substrate with the conductive adhesive. After bonding the carrier to the substrate, the back-side of the substrate is thinned to expose each of the TSVs on the back-side of the substrate. A second contact array is formed, having a contact coupled to each respective TSV. Conductivity and connections of the TSVs, wiring layers, and contacts are tested by testing for conductivity between contacts of the second contact array.
Xilinx, Inc.
H H
H01L H01L
inventional inventional
Cheang-Whang Dong W. Arifur Myongseob Henley
Chang Kim Rahman Kim Liu