Ditthavong & Steiner, P.C.
Common metal contact regions having different Schottky barrier heights and methods of manufacturing same
Methods for forming a semiconductor device having dual Schottky barrier heights using a single metal and the resulting device are provided. Embodiments include a semiconductor substrate having an n-FET region and a p-FET region each having source/drain regions; a titanium silicon (Ti—Si) intermix phase Ti liner on an upper surface of the n-FET region source/drain regions; and titanium silicide (TiSi) forming an upper surface of the p-FET region source/drain regions.
GLOBALFOUNDRIES INC.
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inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Jinping Ruilong Tek Po Rinus
Liu Xie Lee