Harness, Dickey & Pierce, P.L.C.
High electron mobility transistors and methods of manufacturing the same
High electron mobility transistors (HEMTs) and methods of manufacturing the same. A HEMT may include a channel layer and a channel supply layer, and the channel supply layer may be a multilayer structure. The channel supply layer may include an etch stop layer and an upper layer on the etch stop layer. A recess region may be in the upper layer. The recess region may be a region recessed to an interface between the upper layer and the etch stop layer. A gate electrode may be on the recess region.
Samsung Electronics Co., Ltd.
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Jai-kwang In-jun Hyuk-soon Ki-ha Jae-joon Jong-bong
Shin Hwang Choi Hong Oh Ha