Birch, Stewart, Kolasch & Birch, LLP
Method for forming semiconductor contact structure
A method for forming a semiconductor contact structure is provided. The method includes depositing a dielectric layer over a substrate. The method also includes etching the dielectric layer to expose a sidewall of the dielectric layer and a top surface of the substrate. In addition, the method includes forming a silicide region in the substrate. The method also includes applying a plasma treatment to the sidewall of the dielectric layer and the top surface of the substrate to form a nitridation region adjacent to a periphery of the silicide region. The method further includes depositing an adhesion layer on the dielectric layer and the silicide region.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Yu-Wen Chih-Wei Ming-Hsing Hong-Mao Wei-Yip Sheng-Hsuan Wei-Jung Ken-Yu Chun-I Yu-Hsiang
Cheng Chang Tsai Lee Loh Lin Lin Chang Tsai Liao