Hoffman Warnick LLC
Circuit structure for adjusting PTAT current to compensate for process variations in device transistor
The disclosure provides a circuit structure including a current source including at least one FDSOI transistor having a back-gate terminal, wherein the current source generates a current proportionate to an absolute temperature of the circuit structure; a first current mirror electrically coupled to the current source and a gate terminal of a device transistor, wherein the first current mirror applies a gate bias to the device transistor based on a magnitude of the current, and wherein a source or drain terminal of the device transistor includes an output current of the circuit structure; and an adjustable voltage source coupled to the back-gate terminal of the at least one FDSOI transistor of the current source, wherein the adjustable voltage source applies a selected back-gate bias voltage to the back-gate terminal of the at least one FDSOI transistor to adjust the current to compensate for process variations of the device transistor.
GLOBALFOUNDRIES INC.
H G G
H03K G05F G05F
inventional inventional inventional
See Taur Sher Jiun
Lee Fang