Lowe Hauptman & Ham, LLP
Method of modifying a low k dielectric layer having etched features and the resulting product
A dielectric layer having features etched thereon and a low dielectric constant, and that is carried by a semiconductor substrate. The etched dielectric layer is modified so its surface energy is reduced by at least one of: (a) applying thermal energy to the layer to cause the layer temperature to be between 100 C and 400 C; (b) irradiating the layer with electromagnetic energy; and/or (c) irradiating the layer with free ions.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chung-Chi Chia-Cheng Keng-Chu Joung-Wei
Ko Chou Lin Liou