Maschoff Brennan
Method for forming semiconductor device with P/N stacked layers
A semiconductor device is provided and includes a semiconductor fin protruding from a semiconductor substrate. The semiconductor fin includes plural pairs of semiconductor layers on the semiconductor substrate, each pair of semiconductor layers consists of a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type. The second semiconductor layer is stacked on and contacts the first semiconductor layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Ru-Shang Li-Yi Chi-Cherng Hung-Pin
Hsiao Chen Jeng Chen