Birch, Stewart, Kolasch & Birch, LLP
Semiconductor memory device
A semiconductor memory device includes a first nonvolatile memory cell, a bit line connected to the first nonvolatile memory cell, and a control circuit connected to the first nonvolatile memory cell and the bit line, and disposed and configured in such a manner as to reset the bit line to a predetermined first potential state only for a certain period “a” of time in response to transition of an input address signal. The first nonvolatile memory cell has a gate electrode formed on a semiconductor layer via a gate insulating film; a channel region disposed under the gate electrode; diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region; and memory functional units formed on both sides of the gate electrode and having the function of retaining charges.
Sharp Kabushiki Kaisha
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H01L G11C G11C H01L H01L H01L H01L H01L G11C
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Hiroshi Yoshifumi Akihide Yoshinao Masaru
Iwata Yaoi Shibata Morikawa Nawaki