Westerman, Hattori, Daniels & Adrian, LLP.
Semiconductor device and manufacturing method therefor
A ferroelectric capacitor having a bottom electrode (9a), a ferroelectric film (10a) and a top electrode (11a) is formed above a semiconductor substrate (1). The ferroelectric film (10a) is constituted of CSPZT with 0.1-5 mol % of La and 0.1-5 mol % of Nb.
Fujitsu Limited
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Wensheng
Wang