Method of manufacturing a semiconductor device
The present invention discloses a method for forming a semiconductor device with a reduced silicon horn structure. After a pad nitride layer is removed from a substrate, a hard mask layer is conformally deposited over the substrate. The hard mask layer is then etched and trimmed to completely remove a portion of the hard mask layer from an active area and a portion of the hard mask layer from an oblique sidewall of a protruding portion of a trench isolation region around the active area. The active area is then etched to form a recessed region. A gate dielectric layer is formed in the recessed region and a gate electrode layer is formed on the gate dielectric layer.
UNITED MICROELECTRONICS CORP.
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Guang-Yu Po-Wen Chung-Fu Chun-Tsen Yu-Hsiang Ssu-I Chia-Jung Chin-Hung Chun-Ya Chih-Kai
Lo Su Chang Lu Lin Fu Hsu Chen Chiu Hsu