Tung & Associates
Sacrificial self aligned spacer layer ion implant mask method for forming a split gate field effect transistor (FET) device
Within a method for fabricating a split gate field effect transistor (FET) within a semiconductor integrated circuit microelectronic fabrication, there is employed a sacrificial self aligned spacer layer which defines a control gate electrode channel within the split gate field effect transistor (FET). The sacrificial self aligned spacer layer is employed as part of an ion implantation mask employed for forming a source/drain region adjoining the control gate electrode channel within the split gate field effect transistor (FET). The sacrificial self aligned spacer layer is stripped from over the control gate electrode channel prior to forming over the control gate electrode channel a control gate electrode within the split gate field effect transistor.
Taiwan Semiconductor Manufacturing Company, Ltd
H H
H01L H01L
inventional inventional
Chuan-Li Di-Son Jake Chia-Da Sheng-Wei Wen-Ting
Chang Kuo Yeh Hsieh Tsaur Chu