Slater & Matsil, L.L.P.
Fin profile structure and method of making same
A FinFET device may include a first semiconductor fin laterally adjacent a second semiconductor fin. The first semiconductor fin and the second semiconductor fin may have profiles to minimize defects and deformation. The first semiconductor fin comprises an upper portion and a lower portion. The lower portion of the first semiconductor fin may have a flared profile that is wider at the bottom than the upper portion of the first semiconductor fin. The second semiconductor fin comprises an upper portion and a lower portion. The lower portion of the second semiconductor fin may have a flared profile that is wider than the upper portion of the second semiconductor fin, but less than the lower portion of the first semiconductor fin.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chih-Tang Chia-Wei Tai-Chun Chih-Fang Ryan Chia-Jen
Peng Chang Huang Liu Chen