Stevens, Davis, Miller & Mosher, LLP
Lead frame for semiconductor device, process for producing the same and semiconductor device using the same
The present invention relates to a lead frame for semiconductor devices having an outer lead part improved in solder wettability which comprisesi. a substrate comprising an alloy comprising at least one member selected from the group consisting of nickel, copper, iron and (nickel and copper and iron),ii. an inner lead part having a surface treated layer A, the surface treated layer A comprising silver or an alloy comprising silver, andiii. an outer lead part having a surface treated layer B, the surface treated layer B comprising silver and tin, or copper and tin,wherein the surface treated layer B has on its surface an oxidized layer comprising tin and oxygen, the atomic ratio of oxygen to tin in the oxidized layer is 0.5-1.8 and the thickness of the layer is not more than 20 nm.
Matsushita Electric Industrial Co., Ltd.
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Matsuo Tsuyoshi Takashi Hisahiro
Masuda Tokiwa Kubara Tanaka