Robinson Intellectual Property Law Office, P.C.
Storage device comprising semiconductor elements
The semiconductor device is provided in which a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is arranged in matrix and a wiring (also referred to as a bit line) for connecting one of the memory cells and another one of the memory cells and a source or drain region in the first transistor are electrically connected through a conductive layer and a source or drain electrode in the second transistor provided therebetween. With this structure, the number of wirings can be reduced in comparison with a structure in which the source or drain electrode in the first transistor and the source or drain electrode in the second transistor are connected to different wirings. Thus, the integration degree of a semiconductor device can be increased.
Semiconductor Energy Laboratory Co., Ltd.
H H H H H H
H01L H01L H01L H01L H01L H01L
inventional inventional inventional additional additional inventional
Atsuo Keitaro Yuki Yoshinori Yuto Kiyoshi
Isobe Imai Hata Ieda Yakubo Kato