Hoffman Warnick LLC
Methods for nitride planarization using dielectric
The disclosure is directed to methods of planarizing an integrated circuit structure including: forming a dielectric over a first nitride layer; planarizing the dielectric to a top surface of a set of nitride fins in a first region and removing the dielectric from a second region to expose the substantially planar upper surface in a second region; forming a second nitride layer over the dielectric and the top surface of the set of nitride fins and over the substantially planar upper surface; planarizing the second nitride layer such that the second nitride layer in the second region is planar with the top surface of the dielectric and the set of nitride fins, and such that the second nitride layer is removed from the first region; and performing an etch such that the first nitride layer in the first region is planar with the first nitride layer in the second region.
GLOBALFOUNDRIES INC.
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inventional inventional inventional
Haigou Tai Fong Xingzhao Haifeng Laertis Jinping Jiehui
Huang Chao Shi Sheng Economikos Liu Shu