Harness, Dickey & Pierce, P.L.C.
Vertical memory devices
A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that is vertical to a top surface of the substrate, a plurality of gate lines stacked on top of each other on the substrate, a plurality of wiring over the gate lines and electrically connected to the gate lines, and an identification pattern on the substrate at the same level as a level of at least one of the wirings. The gate lines surround the channels. The gate lines are spaced apart from each other along the first direction.
Samsung Electronics Co., Ltd.
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Jong-Min Hoo-Sung Seung-Min Jeong-Seok Yong-Joon
Lee Cho Lee Nam Choi