Brinks Hofer Gilson & Lione
Tunneling magnetic sensing element including free magnetic layer and IrMn protective layer disposed thereon and method for manufacturing the same
A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of iridium-manganese (IrMn) disposed on the free magnetic layer. Consequently, a high rate of change in resistance is obtained and the magnetostriction of the free magnetic layer is low, compared with a tunneling magnetic sensing element which is not provided with a first protective layer.
TDK Corporation
B G H G H G G Y G H H B H H B H G
B82Y G01R H01F G11B H01F G01R G11B Y10T G11B H01F H01F B82Y H01F H01L B82Y H01L G11B
inventional inventional inventional inventional inventional inventional inventional additional inventional additional additional inventional inventional inventional inventional inventional additional
Ryo Naoya Kazumasa Masahiko Masamichi Yosuke
Nakabayashi Hasegawa Nishimura Ishizone Saito Ide