Multiple-pattern forming methods
Multiple-pattern forming methods are provided. The methods comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) patternwise exposing the photoresist layer to activating radiation; (d) baking the exposed photoresist layer; (e) contacting the baked photoresist layer with a first developer to form a first resist pattern; (f) treating the first resist pattern with a coating composition comprising an expedient for switching solubility of a sidewall region of the first resist pattern from soluble to insoluble with respect to a second developer that is different from the first developer; and (g) contacting the treated first resist pattern with the second developer to remove portions of the first resist pattern, leaving the solubility-switched sidewall region to form a multiple-pattern. The methods have particular applicability to the semiconductor manufacturing industry for the formation of fine lithographic patterns.
Rohm and Haas Electronic Materials LLC Rohm and Haas Electronic Materials Korea Ltd. Dow Global Technologies LLC
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James C. Shintaro Lori Anne Jung Woo Phillip D. Choong-Bong Cheng-Bai Cong Chang-Young
Taylor Yamada Joesten Kim Hustad Lee Xu Liu Hong