Haynes and Boone, LLP
Asymmetric source/drain depths
A semiconductor device includes a substrate having a first region and a second region, an n-type transistor in the first region, the n-type transistor comprising a first set of source/drain features, and a p-type transistor in the second region, the p-type transistor comprising a second set of source/drain features. The second set of source/drain features extend deeper than the first set of source/drain features.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Chia-Cheng Cheng-Yi Yu-Lin Chih Chieh Chih-Sheng Tsung-Lin Yee-Chia Jung-Piao
Ho Peng Yang Yeh Chang Lee Yeo Chiu