Vierra Magen Marcus LLP
Multi-sensing scan for cross-temperature mitigation
Methods and systems for improving the reliability of stored data in the presence of cross-temperature variation are described. To reduce the number of data errors caused by cross-temperature variation, two or more sensing passes may be performed corresponding with two or more different sensing times. The amount of shifting in the memory cell threshold voltages may be determined on a per-bit basis or on a cell-by-cell basis based on the sensing operations performed during the two or more sensing passes. The stored data states may be assigned based on the amount of shifting in the memory cell threshold voltages during the two or more sensing passes and the type of cross-temperature variation present (e.g., whether the memory cells were programmed at a temperature above 65 degrees Celsius and read back at a temperature below 25 degrees Celsius).
Western Digital Technologies, Inc.
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Yingda Henry Lei Wei
Dong Chin Lin Zhao