CKC & Partners Co., LLC
Semiconductor structure and method of forming the same
A method of forming a semiconductor structure includes the following steps. A dielectric stack is formed on a bottom metal. A first mask layer is formed on the dielectric stack. The first mask layer has a plurality of first through holes, and a portion of the first through holes is in a central portion of the first mask layer. A second mask layer is formed on the first mask layer and in the first through holes. The second mask layer is patterned to form an opening between a central portion of the second mask layer covers the portion of the first through holes and is surrounded by the peripheral portion. The dielectric stack is etched below the first through holes the second through hole. A conductive layer is formed in the second through hole and on a top surface of the dielectric stack.
NANYA TECHNOLOGY CORPORATION
H
H01L
inventional
Chin-Piao
Chang