Haynes Beffel & Wolfeld LLP
Method and apparatus for non-volatile multi-bit memory
A memory device that selectably exhibits first and second logic levels. A first conductive material has a first surface with a first memory layer formed thereon, and a second conductive material has a second surface with a second memory layer formed thereon. A connective conductive layer joins the first and second memory layers and places the same in electrical contact. The structure is designed so that the first memory layer has a cross-sectional area less than that of the second memory layer.
Macronix International Co., Ltd.
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ChiaHua Kuang Yeu Erh-Kun
Ho Hsieh Lai