Harness, Dickey & Pierce, P.L.C.
High electron mobility transistor and method of manufacturing the same
A higher electron mobility transistor (HEMT) and a method of manufacturing the same are disclosed. According to example embodiments, the HEMT may include a channel supply layer on a channel layer, a source electrode and a drain electrode that are on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a source pad and a drain pad. The source pad and a drain pad electrically contact the source electrode and the drain electrode, respectively. At least a portion of at least one of the source pad and the drain pad extends into a corresponding one of the source electrode and drain electrode that the at least one of the source pad and the drain pad is in electrical contact therewith.
Samsung Electronics Co., Ltd.
H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional additional additional inventional additional additional inventional
Woo-chul Jae-joon Young-hwan Jong-bong Hyuk-soon Jai-kwang Ki-yeol
Jeon Oh Park Ha Choi Shin Park