Method for forming EPROM with low leakage
A method for forming an electrically programmable read-only memory(EPROM) includes forming a first p+ doped region, a second p+ doped region, and a third p+ doped region on an N-well, forming a control gate between the first p+ doped region and the second p+ doped region, and forming a p+ floating gate between the second p+ doped region and the third p+ doped region.
eMemory Technology Inc.
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inventional inventional additional inventional inventional
Chih-Hsun Shih-Jye Ming-Chou Ching-Hsiang
Chu Shen Ho Hsu