Nixon & Vanderhye, P.C.
Lateral resonant tunneling transistor having two non-symmetric quantum dots
 A lateral resonant tunneling transistor having two non-symmetric quantum dots is disclosed. When a negative voltage is supplied to each plurality of thin split gates, two non-symmetric quantum dots are formed owing to the formation of the potential barrier. Thus when a forward bias voltage is applied, the resonant tunneling phenomena occur twice successively. Through these two successive resonant tunneling phenomena and by lowering the height of the third potential barrier 6a, the resonant tunneling current can be maximized. 
Electronics and Telecommunications Research Institute
H H H H B
H01L H01L H01L H01L B82Y
inventional inventional inventional inventional inventional
Seong-Jae Kyoung-Wan Min-Cheol
Lee Park Shin