Haynes and Boone, LLP
Method for electron beam proximity correction with improved critical dimension accuracy
The present disclosure provides one embodiment of an integrated circuit (IC) method. The method includes receiving an IC design layout having a feature; fracturing the feature into a plurality of polygons that includes a first polygon; assigning target points to edges of the first polygon; calculating corrected exposure doses to the first polygon, wherein each of the correct exposure doses is determined based on a respective one of the target points by simulation; determining a polygon exposure dose to the first polygon based on the corrected exposure doses; and preparing a tape-out data for lithography patterning, wherein the tape-out data defines the plurality of polygons and a plurality of polygon exposure doses paired with the plurality of polygons.
Taiwan Semiconductor Manufacturing Company, Ltd.
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H01J H01J H01J G03F
inventional additional additional inventional
Cheng-Hung Burn Jeng Pei-Yi Shy-Jay Wen-Chuan Jaw-Jung
Chen Lin Liu Lin Wang Shin