Muncy, Geissler, Olds & Lowe, P.C.
Semiconductor device
A semiconductor device, including: a P-type substrate; an N-type region, contacting with the P-type substrate; a N+-type doped region, disposed in the N-type region; a first P+-type doped region, disposed in the N-type region; a second P+-type doped region, disposed in the N-type region; a P-type buried layer, disposed in the P-type substrate under the N-type region and contacting with the N-type region; and a N-type doped region, disposed in the P-type substrate under a contact surface between the P-type buried layer and the N-type region.
NUVOTON TECHNOLOGY CORPORATION
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Po-An Chia-Wei
Chen Chang