Maschoff Brennan
Semiconductor device with treated interfacial layer on silicon germanium
A semiconductor device includes a source region, a drain region, a SiGe channel region, an interfacial layer, a high-k dielectric layer and a gate electrode. The source region and the drain region are over a substrate. The SiGe channel region is laterally between the source region and the drain region. The interfacial layer forms a nitrogen-containing interface with the SiGe channel region. The high-k dielectric layer is over the interfacial layer. The gate electrode is over the high-k dielectric layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Zi-Wei Chih-Yu Hsiang-Pi
Fang Chang Chang