Slater Matsil, LLP
Method for manufacturing a semiconductor device
A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and contacting the dielectric layer and within the opening in the dielectric layer. The oxide film is formed from multiple precursors that are free of O2, and depositing the oxide film includes forming a plasma of a first precursor of the multiple precursors.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Ching-Yu Jung-Hau Wan-Lin Shing-Chyang Jen Hung Tze-Liang
Chang Shiu Tsai Pan Wang Lee