Anova Law Group, PLLC
Semiconductor device
A semiconductor device is provided. The semiconductor device includes a base substrate; a first dielectric layer on the base substrate; a target gate structure in the first dielectric layer and on the base substrate. The target gate structure includes a target structure body and a target spacer wall on sidewalls of the target gate structure body. The semiconductor device further includes a protective layer on a top surface of the target gate structure, in the first dielectric layer. The semiconductor device further includes conductive plugs in the first dielectric layer on sides of the target gate structure and the protective layer.
Semiconductor Manufacturing International (Beijing) Corporation Semiconductor Manufacturing International (Shanghai) Corporation
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Yong
Li