Lowe Hauptman & Ham, LLP
Semiconductor device having a double deep well
A semiconductor device includes a substrate having a first type doping. The semiconductor device further includes a first deep well in the substrate, the first deep well having a second type doping. The semiconductor device further includes a second deep well in the substrate, the second deep well having the second type doping and being separated and above the first deep well. The semiconductor device further includes a first well over the second deep well, the first well having the first type doping and a gate structure over the first well.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Hua-Chou Chien-Chih
Tseng Ho