Anova Law Group, PLLC
Transistor
A transistor is provided and includes a substrate; a first interlayer dielectric layer disposed on the substrate, the first interlayer dielectric layer including an opening there-through; a work function layer at least disposed over a bottom of the opening; a gate electrode layer disposed in the opening and over the work function layer; and a protection layer disposed on the work function layer and between the gate electrode layer and the first interlayer dielectric layer.
Semiconductor Manufacturing International (Beijing) Corporation Semiconductor Manufacturing International (Shanghai) Corporation
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Yong
Li