Roberts Calderon Safran & Cole, P.C.
Bi-directional breakdown silicon controlled rectifiers
The present disclosure relates to semiconductor structures and, more particularly, to bi-directional silicon controlled rectifiers (SCRs) and methods of manufacture. The structure includes: a plurality of diffusion regions; a plurality of p-type (P+) wells adjacent to the diffusion regions, wherein the P+ wells are directly connected; and a plurality of n-type (N+) wells adjacent to the P+ wells.
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Robert J. Alain F. You Tsung-Che Souvick
Gauthier, Jr. Loiseau Li Tsai Mitra