Staas & Halsey
Resonant tunneling semiconductor device
 A resonant tunneling semiconductor device having a large peak-to-valley current density J.sub.p /J.sub.v ratio comprises an InP substrate, a first contact compound semiconductor lattice-matched to Inp, a first barrier layer of (In.sub.0.52 Al.sub.0.48 As).sub.z (In.sub.0.53 Ga.sub.0.47 As).sub.1-z, (0<z.ltoreq.1), a well layer of In.sub.1-y Ga.sub.y As, (0.48.gtoreq.y.gtoreq.0.46), a second barrier layer of (In.sub.0.52 Al.sub.0.48 As).sub.z -(In.sub.0.53 Ga.sub.0.47 As).sub.1-z, (0<z.ltoreq.1), and a second contact layer compound semiconductor lattice-matched to InP:The first and second barrier layers and the well layer forming a quantum-well structure. Instead of the quantum-well structure above, it is possible to adopt the quantum-well structure of strained-layers comprising first and second barrier layers which are of In.sub.1-x Al.sub.x As (0.48<x.ltoreq.1) and have a thickness of 0.5 to 10.0 nm. 
Fujitsu Limited
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inventional inventional inventional inventional inventional
Shunichi Toshio Tsuguo
Muto Fujii Inata