Oblon, McClelland, Maier & Neustadt, L.L.P.
Semiconductor memory device and method for manufacturing same
A semiconductor memory device includes a plurality of first electrode layers stacked in a first direction; a semiconductor layer extending in the first direction in the plurality of first electrode layers; a first insulating layer extending in the first direction along the semiconductor layer between the semiconductor layer and each of the plurality of first electrode layers; a second insulating layer covering the periphery of the plurality of first electrode layers; a resistive body provided on the second insulating layer; and a third insulating layer provided between the resistive body and the second insulating layer, the third insulating layer including the same material as the material of the first insulating layer.
TOSHIBA MEMORY CORPORATION
H H H H H
H01L H01L H01L H01L H01L
additional inventional inventional additional inventional
Hiroki
Yamashita