Eschweiler & Potashnik, LLC
Stacked grid for more uniform optical input
A back side illumination (BSI) image sensor with stacked grid shifting is provided. A pixel sensor is arranged within a semiconductor substrate. A metallic grid segment is arranged over the pixel sensor and has a metallic grid opening therein. A center of the metallic grid opening is laterally shifted from a center of the pixel sensor. A dielectric grid segment is arranged over the metallic grid and has a dielectric grid opening therein. A center of the dielectric grid opening is laterally shifted from the center of the pixel sensor. A method for manufacturing the BSI image sensor is also provided.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chun-Hao Tsung-Han Kuo-Cheng Yun-Wei Yung-Lung Horng-Huei Chao-Hsiung
Chou Tsai Lee Cheng Hsu Tseng Wang