Birch, Stewart, Kolasch & Birch, LLP
Semiconductor device and method for manufacturing the same
A semiconductor device includes a first source/drain feature adjoining first nanostructures, and a first multilayer work function structure surrounding the first nanostructures. The first multilayer work function structure includes a first middle dielectric layer around the first nanostructures and a first metal layer around and in contact with the first middle dielectric layer. The semiconductor device also includes a second source/drain feature adjoining second nanostructures, and a second multilayer work function structure surrounding the second nanostructures. The second multilayer work function structure includes a second middle dielectric layer around the second nanostructures and a second metal layer around and in contact with the second middle dielectric layer. The first middle dielectric layer and the second middle dielectric layer are made of dielectric materials. The second metal layer and the first metal layer are made of the same metal material.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chih-Chieh Tzu-Chiang Chih-Sheng Cheng-Hsien I-Sheng
Yeh Chen Chang Wu Chen