Manufacturing method of complementary metal oxide semiconductor transistor and manufacturing method of array substrate
Disclosed is a manufacturing method of a complementary metal oxide semiconductor transistor, comprising a step of implementing a channel doping to an N-type channel region. The step comprises: preparing a low temperature polysilicon layer on a substrate, and patterning the low temperature polysilicon layer to form the N-type channel region correspondingly above a light shielding pattern; coating a negative photoresist on the substrate, and using the light shielding pattern as a mask to implement exposure to the negative photoresist from a back surface of the substrate to form a negative photoresist mask plate exposing the N-type channel region after development; implementing the channel doping to the N-type channel region with shielding of the negative photoresist mask plate. Further disclosed is a manufacturing method of an array substrate, applied with the aforesaid manufacturing method of the complementary metal oxide semiconductor transistor.
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
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Chao Yuxia
He Chen