Koppel, Patrick, Heybl & Dawson
Semiconductor device with a conduction enhancement layer
A semiconductor device includes a drift layer of a first conductivity type having a doping concentration and a conduction layer also of the first conductivity type on the drift layer that has a doping concentration greater than the doping concentration of the drift layer. The device also includes a pair of trench structures, each including a trench contact at one end and a region of a second conductivity type opposite the first conductivity type, at another end. Each trench structure extends into and terminates within the conduction layer such that the second-conductivity-type region is within the conduction layer. A first contact structure is on the drift layer opposite the conduction layer while a second contact structure is on the conduction layer.
Teledyne Scientific & Imaging, LLC
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Qingchun
Zhang