Slater Matsil, LLP
Transistor gates and method of forming
A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric disposed around the first nanostructure; a second high-k gate dielectric being disposed around the second nanostructure; and a gate electrode over the first high-k gate dielectric and the second high-k gate dielectric. A portion of the gate electrode between the first nanostructure and the second nanostructure comprises a first portion of a p-type work function metal filling an area between the first high-k gate dielectric and the second high-k gate dielectric.
Taiwan Semiconductor Manufacturing Co., Ltd.
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inventional inventional additional inventional additional inventional
Ji-Cheng Chi On Hsin-Yi Cheng-Lung
Chen Chui Lee Hung