Layout pattern for magnetoresistive random access memory
A layout pattern for magnetoresistive random access memory (MRAM) includes a first magnetic tunneling junction (MTJ) pattern on a substrate, a second MTJ pattern adjacent to the first MTJ pattern, and a third MTJ pattern between the first MTJ pattern and the second MTJ pattern. Preferably, the first MTJ pattern, the second MTJ pattern, and the third MTJ pattern constitute a staggered arrangement.
UNITED MICROELECTRONICS CORP.
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Yung-Ching Bo-Chang Jhen-Siang Jian-Jhong Po-Chun Yi-Ting Jen-Yu Cheng-Tung
Hsieh Li Wu Chen Yang Wu Wang Huang