Myers Bigel Sibley & Sajovec, P.A.
Semiconductor devices having transistors capable of adjusting threshold voltage through body bias effect
Semiconductor devices have transistors capable of adjusting threshold voltages through a body bias effect. The semiconductor devices include transistors having a front gate on a substrate, a back gate between adjacent transistors, and a carrier storage layer configured to surround the back gate and to trap a carrier. A threshold voltage of a transistor may be changed in response to voltage applied to the back gate. Related fabrication methods are also described.
Samsung Electronics Co., Ltd.
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Jun Soo Dong Jin
Kim Lee