Smith, Gambrell & Russell, LLP
Semiconductor device and method for producing the same
 For example, in a plasma processing system, C.sub.4 F.sub.8 gas and C.sub.2 H.sub.4 gas are introduced as film-forming gases at flow rates of 60 sccm and 30 sccm, respectively, under the conditions of a pressure of 0.2 Pa, a microwave power of 2.7 kW, a radiofrequency power of 1.5 kW, and a wafer temperature of 350.degree. C. At the same time, a plasma gas is also introduced at a flow rate of 150 sccm to form CF film 13 having an F content of, for example, 22% on silicon substrate 11. This CF film 13 has a relative dielectric constant of 2.4. 
Tokyo Electron Limited
C H H H C H C H H H H H H H H H H H H
C23C H01L H01L H01L C23C H01L C23C H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Yoko Masahide Takashi Shunichi Takeshi Tadashi
Naito Saito Akahori Endo Aoki Hirata