Tutunjian & Bitetto, P.C.
Three-terminal non-volatile multi-state memory for cognitive computing applications
A three-terminal non-volatile multi-state device based on mobile ion induced electrical resistivity change is provided. The three-terminal non-volatile multi-state memory device includes a substrate having a first electrode and a second electrode therein. The three-terminal non-volatile multi-state memory device further includes a mobile ion including resistor layer disposed over the first electrode, the second electrode, and part of the substrate. The three-terminal non-volatile multi-state memory device also includes a third electrode formed over the mobile ion including resistor layer. The three-terminal non-volatile multi-state memory device provides multi-level states determined by an electrical resistivity the mobile ion including resistor layer which changes the electrical resistivity based on the mobile ion concentration in the material.
International Business Machines Corporation
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Yun Seog Ning Seyoung Kevin W. Joel P. Stephen W. Devendra K.
Lee Li Kim Brew de Souza Bedell Sadana