Lower electrode of DRAM capacitor and manufacturing method thereof
A lower electrode is made of a TiN-based material and provided at a base of a dielectric film in a DRAM capacitor. The lower electrode includes first TiON films provided at opposite outer sides, the first TiON films having a relatively low oxygen concentration, and a second TiON film provided between the first TiON films, the second TiON film having a relatively high oxygen concentration.
TOKYO ELECTRON LIMITED
H H
H01L H01L
inventional inventional
Seokhyoung Masaki Tadahiro Masaki
Hong Sano Ishizaka Koizumi