Rader, Fishman & Grauer PLLC
Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor device
When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0<y/x&lE;0.011 and x&gE;450 &mgr;m. Alternatively, if the maximum dimension of the substrate is D (cm), its warpage H is in the range of 0<H&lE;70&times;10&#8722;4 (cm), and Z=y/x, D is controlled to satisfy the relation 0<D<(2/CZ)cos&#8722;1(1&#8722;HCZ), where C (cm&#8722;1) is the proportionality constant when the radius of curvature of the substrate &rgr; (cm) is expressed as 1/&rgr;=CZ.
Sony Corporation
H H H C H C C H
H01L H01L H01L C30B H01L C30B C30B H01L
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Shinro Yasuhiko Osamu Motonobu Takeharu Katsuyoshi
Ikeda Suzuki Goto Takeya Asano Shibuya