Robinson Intellectual Property Law Office, P.C.
Semiconductor device including memory cell
A data retention period in a semiconductor device or a semiconductor memory device is lengthened. The semiconductor device or the semiconductor memory includes a memory circuit including a first transistor including a first semiconductor layer and a first gate and a second transistor including a second semiconductor layer, a second gate, and a third gate The first semiconductor layer is formed at the same time as a layer including the second gate.
Semiconductor Energy Laboratory Co., Ltd.
H G H G H H H
H01L G11C H01L G11C H01L H01L H01L
inventional inventional inventional additional inventional inventional inventional
Jun Kiyoshi Shuhei Yutaka Yuto
Koyama Kato Nagatsuka Shionoiri Yakubo