Highly producible magnetoresistive RAM process
 A process for forming a magnetoresistive bit and an interconnection to an underlying component forms a pattern in an amorphous dielectric overlying the magnetic materials. Portions of the magnetic materials are removed to form a bit having a smooth bit edge profile by ion milling. The bit has a bit end located over the underlying component. A second amorphous dielectric layer is deposited and etched at the bit end to form a via at the underlying component. Conventional first metal is used to form the interconnection. 
Honeywell Inc.
H
H01L
inventional
Allan T. Jerry Tangshiun Huang-Joung
Hurst Yue Yeh Chen