Slater Matsil, LLP
Apparatus and method for memory device
A method comprises forming a gate stack over a substrate, applying an oxygen flush process to the gate stack, forming a uniform oxide layer on the gate stack as a result of performing the step of applying the oxygen flush process and removing the uniform oxide layer through a pre-clean process.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Yu-Jen Ping-Pang Chih-Ming Shiu-Ko
Chen Hsieh Lee JangJian