JCIPRNET
Semiconductor die, manufacturing method thereof, and semiconductor package
A semiconductor die is provided. The semiconductor die includes a semiconductor substrate, an interconnection structure, conductive pads, a first passivation layer, and a second passivation layer. The interconnection structure is disposed on the semiconductor substrate. The conductive pads are disposed over and electrically connected to the interconnection structure. The first passivation layer and the second passivation layer are sequentially stacked on the conductive pads. The first passivation layer and the second passivation layer fill a gap between two adjacent conductive pads. The first passivation layer includes a first section and a second section. The first section extends substantially parallel to a top surface of the interconnection structure. The second section faces a side surface of one of the conductive pads. Thicknesses of the first section and the second section are different.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional inventional additional additional additional additional additional inventional additional inventional additional inventional additional inventional additional additional inventional inventional additional additional additional additional additional additional inventional additional additional additional inventional inventional inventional additional inventional additional
Ming-Fa Hsien-Wei Jie
Chen Chen Chen