Method of forming a complementary metal-oxide-semiconductor (CMOS) device
A complementary metal-oxide-semiconductor (CMOS) device and methods of formation thereof are disclosed. In a particular example, a method of forming a CMOS device includes forming a first layer on an extension layer of a wafer, forming a first gate on a portion of the first layer, and forming an expansion region proximate to the extension layer. The method also includes removing a portion of the first gate to create a cavity and removing a portion of the first layer to extend the cavity to the extension layer.
QUALCOMM Incorporated
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Xia Bin Jun
Li Yang Yuan