McDermott Will & Emery LLP
Semiconductor light emitting device
A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.
SAMSUNG ELECTRONICS CO., LTD.
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Wan Tae Ju Heon Jin Hyun Hyun Kwon Sang Yeon Seung Hwan
Lim Yoon Lee Hong Kim Lee