Eschweiler & Potashnik, LLC
Photodiode gate dielectric protection layer
The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method is performed by forming a gate dielectric layer over a substrate having a first photodetector region and forming a gate material over the gate dielectric layer. A dielectric protection layer is deposited over the gate dielectric layer and a first sidewall spacer is formed along a side of the gate material. The dielectric protection layer extends from a first location directly over the first photodetector region to a second location between the first sidewall spacer and the gate dielectric layer.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H H H H
H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional
Tsun-Kai Wen-I Jiech-Fun Yeur-Luen Cheng-Hsien Chih-Yu
Tsao Hsu Lu Tu Chou Lai