Slater Matsil, LLP
Eliminating fin mismatch using isolation last
An embodiment fin field-effect transistor (FinFET) includes an inner fin, and outer fin spaced apart from the inner fin by a shallow trench isolation (STI) region, an isolation fin spaced apart from the outer fin by the STI region, the isolation fin including a body portion, an isolation oxide, and an etch stop layer, the etch stop layer interposed between the body portion and the isolation oxide and between the STI region and the isolation oxide, and a gate formed over the inner fin, the outer fin, and the isolation fin.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chih-Sheng Clement Hsingjen Yi-Tang Chih-Yu
Chang Wann Lin Hsu