Hultquist PLLC
High concentration nitrogen-containing germanium telluride based memory devices and processes of making
A PCM device has the composition GexTeyNzAm deposited onto a substrate, where x is about 40% to about 60%, y is about 30% to about 49%, and z is about 5% to about 20% and more preferably about 5% to about 40%. The component represented as A is optional and representative of an element of Sb, Sn, In, Ga, or Zn, and m is up to about 15%. The composition is in the form of a film, and the nitrogen allows for the substantially conformal deposition of the film onto the substrate. A CVD process for depositing the PCM comprises delivering a Ge-based precursor and a Te-based precursor in vapor form to a CVD chamber, heating and pressurizing the chamber, and depositing the film onto a substrate. In making a phase change device using this process, the film is annealed and polished.
Advanced Technology Materials, Inc.
H H H H C C
H01L H01L H01L H01L C23C C23C
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Jun-Fei Jeffrey F. Weimin Philip S. H.
Zheng Roeder Li Chen