Ladas & Parry LLP
Schottky barrier tunnel single electron transistor and method of manufacturing the same
Provided are a Schottky barrier tunnel single electron transistor and a method of manufacturing the same that use a Schottky barrier formed between metal and semiconductor by replacing a source and a drain with silicide as a reactant of silicon and metal, instead of a conventional method of manufacturing a single electron transistor (SET) that includes source and drain regions by implanting dopants such that an artificial quantum dot is formed in a channel region. As a result, it does not require a conventional PADOX process to form a quantum dot for a single electron transistor (SET), height and width of a tunneling barrier can be artificially adjusted by using silicide materials that have various Schottky junction barriers, and it is possible to improve current driving capability of the single electron transistor (SET).
Electronics and Telecommunications Research Institute
H B H
H01L B82Y H01L
inventional inventional inventional
Jae Heon Moon Gyu Seong Jae Yark Yeon
Shin Jang Lee Kim