Myers Bigel Sibley & Sajovec, P.A.
Methods of fabricating semiconductor devices
Methods for fabricating a semiconductor device are provided. In the methods, first material layers and second material layers may be alternatingly and repeatedly stacked on a substrate. An opening penetrating the first material layers and the second material layers may be formed. A semiconductor solution may be formed in the opening by using a spin-on process.
Samsung Electronics Co., Ltd.
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Yong-Hoon Jin Ha Kihyun Jung-Ho
Son Jeong Hwang Kim