Haynes and Boone, LLP
Silicon-containing photoresist for lithography
A photoresist includes a polymer backbone, an acid labile group (ALG) chemically bonded to the polymer backbone, a photo-acid generator (PAG), a solvent, and a silicon-containing unit that is chemically bonded to the ALG. A method of using the photoresist composition includes forming a layer of the photoresist over a substrate, performing an exposing process to the photoresist layer; and developing the photoresist layer, thereby forming a patterned photoresist layer. The patterned photoresist layer includes the silicon-containing unit.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Li-Yen Ching-Yu
Lin Chang