Myers Bigel, P.A.
Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods
Semiconductor devices include a silicon carbide drift region having an upper portion and a lower portion. A first contact is on the upper portion of the drift region and a second contact is on the lower portion of the drift region. The drift region includes a superjunction structure that includes a p-n junction that is formed at an angle of between 10° and 30° from a plane that is normal to a top surface of the drift region. The p-n junction extends within +/−1.5° of a crystallographic axis of the silicon carbide material forming the drift region.
Cree, Inc.
H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional additional inventional inventional inventional inventional inventional inventional inventional inventional
Alexander V. Daniel J. Qingchun Edward Robert Vipindas
Suvorov Lichtenwalner Zhang Van Brunt Pala