Tung & Associates
Low temperature method for metal deposition
A novel, low-temperature metal deposition method which is suitable for depositing a metal film on a substrate, such as in the fabrication of metal-insulator-metal (MIM) capacitors, is disclosed. The method includes depositing a metal film on a substrate using a deposition temperature of less than typically about 270 degrees C. The resulting metal film is characterized by enhanced thickness uniformity and reduced grain agglomeration which otherwise tends to reduce the operational integrity of a capacitor or other device of which the metal film is a part. Furthermore, the metal film is characterized by intrinsic breakdown voltage (Vbd) improvement.
Taiwan Semiconductor Manufacturing Company, Ltd.
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inventional inventional inventional
Ming-Chu Chih-Mu Hung-Jen Chih-Fu Yun Yen-Hsiu Ching-Hwanq
King Huang Lin Chang Chang Chen Su