Marger Johnson & McCollom, P.C.
Semiconductor device having a capping layer including cobalt and method of fabricating the same
A semiconductor device, and a method of fabricating the same, includes cobalt as a capping layer. An interconnection structure of the semiconductor device has an improved via resistance. In the semiconductor device, a single cobalt layer or a composite film including a cobalt layer and a titanium nitride layer is used as the capping layer of a metal layer.
Samsung Electronics Co., Ltd.
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Ji-Soon In-Sun Hyeon-Deok Jung-Wook
Park Park Lee Kim