Heller Ehrman White & McAuliffe, LLP
Method of making IC devices having stable CVD titanium nitride films
 A method of forming a CVD nitride (e.g., titanium nitride) film on a substrate. The as-deposited nitride film is treated by a plasma of a high power density (preferably between approximately 200 W and 300 W) for a prolonged duration of time (preferably between approximately 32 s and 52 s) to reduce the tendency of the resistance and thickness of the as-deposited film to change because of either time of exposure to atmosphere or subsequent processing steps. 
Mosel Vitelic, Inc.
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Feng-hsien Hui-lun Yung-Tsun Wen-Yu Sung-chun
Chao Chen Lo Ho Hsieh