Eschweiler & Associates, LLC
Method to form a CMOS image sensor
The present disclosure relates to a method and composition to limit crystalline defects introduced in a semiconductor device during ion implantation. A high-temperature low dosage implant is performed utilizing a tri-layer photoresist which maintains the crystalline structure of the semiconductor device while limiting defect formation within the semiconductor device. The tri-layer photoresist comprises a layer of spin-on carbon deposited onto a substrate, a layer of silicon containing hard-mask formed above the layer of spin-on carbon, and a layer of photoresist formed above the layer of silicon containing hard-mask. A pattern formed in the layer of photoresist is sequentially transferred to the silicon containing hard-mask, then to the spin-on carbon, and defines an area of the substrate to be selectively implanted with ions.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H
H01L H01L
inventional inventional
Jhy-Jyi Yeur-Luen Cheng-Ta Chun-Wei Wang-Pen Chung Chien Chia-Shiung Jiech-Fun
Sze Tu Wu Chang Mo Wang Tsai Lu