ScienBiziP, P.C.
Method for making three dimensional complementary metal oxide semiconductor carbon nanotube thin film transistor circuit
A method for making a metal oxide semiconductor carbon nanotube thin film transistor circuit. A p-type carbon nanotube thin film transistor and a n-type carbon nanotube thin film transistor are formed on an insulating substrate and stacked with each other. The p-type carbon nanotube thin film transistor includes a first semiconductor carbon nanotube layer, a first drain electrode, a first source electrode, a functional dielectric layer, and a first gate electrode. The n-type carbon nanotube thin film transistor includes a second semiconductor carbon nanotube layer, a second drain electrode, a second source electrode, a first insulating layer, and a second gate electrode. The first drain electrode and the second drain electrode are electrically connected with each other. The first gate electrode and the second gate electrode are electrically connected with each other.
Tsinghua University HON HAI PRECISION INDUSTRY CO., LTD.
H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional additional inventional inventional additional additional inventional inventional inventional inventional inventional
Guan-Hong Shou-Shan Qun-Qing Yu-Dan Xiao-Yang Yuan-Hao
Li Fan Li Zhao Xiao Jin