Oliff & Berridge, PLC
Method for manufacturing silicon single crystal wafer
The present invention provides a method for manufacturing a silicon single crystal wafer, in which a silicon single crystal wafer that is fabricated based on a Czochralski method and has an entire plane in a radial direction formed of an N region is subjected to a rapid thermal annealing in an oxidizing atmosphere, an oxide film formed in the rapid thermal annealing in the oxidizing atmosphere is removed, and then a rapid thermal annealing is carried out in a nitriding atmosphere, an Ar atmosphere, or a mixed atmosphere of these atmospheres. As a result,
Shin-Etsu Handotai Co., Ltd.
C C C H
C30B C30B C30B H01L
inventional inventional inventional inventional
Hiroyasu Yoshinori
Kikuchi Hayamizu