IP & T Group LLP
Semiconductor device and method for fabricating the same
A semiconductor device includes a substrate including a trench, a buried gate filling a part of the trench, an inter-layer dielectric layer formed on the buried gate to gap-fill the rest of the trench, and a protection layer covering substantially an entire surface of the substrate including the inter-layer dielectric layer.
SK Hynix Inc.
H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional additional inventional inventional inventional inventional inventional inventional additional inventional
Ja-Chun Seung-Ryong Se-Aug Hong-Seon
Ku Lee Jang Yang