TWO-STEP OXIDATION PROCESS FOR OXIDIZING A SILICON SUBSTRATE WHEREIN THE FIRST STEP IS CARRIED OUT AT A TEMPERATURE BELOW THE VISCOELASTIC TEMPERATURE OF SILICON DIOXIDE AND THE SECOND STEP IS CARRIED OUT AT A TEMPERATURE ABOVE THE VISCOELASTIC TEMPERATURE
A process for forming an oxide layer includes forming a first oxide portion over a substrate at a temperature below a threshold temperature. A second oxide portion is formed under the first oxide portion at a temperature above the threshold temperature. The substrate is illustratively oxidizable silicon and the threshold temperature is the viscoelastic temperature of silicon dioxide.
Agere Systems Inc.
H C H H H H H H H H H C H
H01L C30B H01L H01L H01L H01L H01L H01L H01L H01L H01L C30B H01L
additional inventional inventional additional inventional inventional inventional additional inventional inventional inventional inventional inventional
Yuanning Sundar Srinivasan Pradip Kumar
Chen Chetlur Roy