Ward and Smith, P.A.
Static random access memory (SRAM) cells including vertical channel transistors and methods of forming the same
A static random access memory (SRAM) cell can include a first pull-up transistor, a first pull-down transistor, a second pull-up transistor, a second pull-down transistor, a first access transistor, and a second access transistor, all being coupled together in a 6 transistor SRAM cell, wherein each of the transistors is configured as a vertical channel transistor.
Samsung Electronics Co., Ltd.
H H H H H H
H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional
Taehyun Gabjin Jin Soak Donghwan Yubin Sungkweon Suhwan Toshiro Eunae
An Nam Kim Kim Kim Baek Kim Nakanishi Chung