Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
Semiconductor device and method of manufacturing the same
A semiconductor device includes: a first n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate including a current carrying region and termination regions positioned at both sides of the current carrying region; a p type epitaxial layer disposed on the first n− type epitaxial layer; a second n− type epitaxial layer disposed on the p type epitaxial layer; a first trench disposed in the current carrying region; a second trench disposed in each termination region; a gate insulating layer disposed in the first trench; a gate electrode disposed on the gate insulating layer; and a termination insulating layer disposed in the second trench, in which a side of the termination insulating layer contacts the p type epitaxial layer and the second n− type epitaxial layer.
Hyundai Motor Company
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Dae Hwan Kyoung-Kook Junghee Youngkyun Jong Seok
Chun Hong Park Jung Lee