Kilpatrick Townsend & Stockton LLP
Selective titanium nitride etching
Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.
Applied Materials, Inc.
H H
H01J H01L
inventional inventional
Jie Seung Ching-Mei Nitin K. Anchuan Jingchun Zhijun
Liu Park Hsu Ingle Wang Zhang Chen