Slater Matsil, LLP
Forming interconnect structure using plasma treated metal hard mask
A method includes forming a metal hard mask over a low-k dielectric layer. The step of forming the metal hard mask includes depositing a sub-layer of the metal hard mask, and performing a plasma treatment on the sub-layer of the metal hard mask. The metal hard mask is patterned to form an opening. The low-k dielectric layer is etched to form a trench, wherein the step of etching is performed using the metal hard mask as an etching mask.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Shing-Chyang Chung-Chi Chia-Cheng Shwang-Ming Keng-Chu
Pan Ko Chou Jeng Lin