William Park & Associates Ltd.
Memory device and method of operating the memory device for initializing sensing latch during evaluation operation
Provided herein may be a memory device and a method of operating the memory device. The memory device includes a memory cell, a page buffer coupled to the memory cell through a bit line and configured to perform a read operation of sensing data stored in the memory cell, wherein the page buffer includes a data storage configured to store data sensed from the memory cell, the read operation includes a precharge period during which a precharge voltage is applied to the bit line, an evaluation period during which a state of the memory cell is incorporated into a voltage of the bit line, and a data storage period during which the data sensed through the bit line is stored in the data storage, and the data storage is initialized during the evaluation period.
SK hynix Inc.
G G G G G G G G G G G G G G G G G G
G11C G11C G11C G11C G11C G11C G11C G11C G11C G11C G11C G11C G11C G11C G11C G11C G11C G11C
inventional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional
Sung Mook Hyung Jin
Lim Choi