The Marbury Law Group, PLLC
Spin-transfer torque MRAM with magnetically coupled assist layers and methods of operating the same
A MRAM device includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a first magnetic assist layer, a second magnetic assist layer, an antiferromagnetic coupling spacer layer located between the first and second magnetic assist layers, and a first nonmagnetic spacer layer located between the free layer and the first magnetic assist layer. The antiferromagnetic coupling spacer layer is configured to provide antiferromagnetic coupling between a first magnetization direction of the first magnetic assist layer and a second magnetization direction of the second magnetic assist layer.
SANDISK TECHNOLOGIES LLC
G H H G G H H G H H H
G11C H01F H01F G11C G11C H01L H01L G11C H01F H01L H01L
inventional inventional inventional additional additional inventional inventional additional inventional inventional inventional
Michael Paul Zhigang Quang Zhanjie
Ho Vanderheijden Bai Le Li