Haynes and Boone, LLP
Method for FinFET LDD doping
A semiconductor device includes a substrate, an isolation structure over the substrate, a fin over the substrate and the isolation structure, a gate structure engaging a first portion of the fin, first sidewall spacers over sidewalls of the gate structure and over a second portion of the fin, source/drain (S/D) features adjacent to the first sidewall spacers, and second sidewall spacers over the isolation structure and over sidewalls of a portion of the S/D features. The second sidewall spacers and the second portion of the fin include a same dopant.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Wei-Yang Chun Hsiung Kuo-Feng Yen-Ming Ya-Yun Cheng-Yi Shahaji B. Jian-Hao
Lee Tsai Yu Chen Cheng Peng More Chen