F. Chau & Associates, LLC.
Etchant composition for indium oxide layer and etching method using the same
An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as H3PO4, HNO3, CH3COOH, HClO4, H2O2, and a Compound A that is obtained by mixing potassium peroxymonosulfate (2KHSO5), potassium bisulfate (KHSO4), and potassium sulfate (K2SO4) together in the ratio of 5:3:2, an etching inhibitor comprising an ammonium-based material, and water. The etchant may remove desired portions of the indium oxide layer without damage to a photoresist pattern or layers underlying the indium oxide layer.
Samsung Electronics Co., Ltd.
C
C09K
inventional
Jae-Yeon Kwan-Tack Dong-Uk Joon-Woo Seung-Yong Hong-Je Kyu-Sang Young-Chul Jin-Su Seung-Hwan Yong-Suk
Lee Lim Choi Lee Lee Cho Kim Park Kim Chon Choi