Townsend and Townsend and Crew LLP
Structure of metal-insulator-semiconductor-like multiple-negative-differential-resistance device and fabrication method thereof
 The present invention provides a structure of a metal-insulator-semiconductor (MIS)-like multiple-negative-differential-resistance (MNDR) device and the fabrication method thereof. The device of the present invention has the characteristics of dual-route and MNDR at low temperatures. These characteristics result from the successive barrier-lowering and potential-redistribution effect when conducting carriers fall into a quantum well. MNDR devices have excellent potential in multiple-value logic circuitry applications and are capable of reducing circuitry complexity. 
National Science Council
H
H01L
inventional
Lih-Wen Wen-Chau
Laih Liu