Metal gate transistor and polysilicon resistor and method for fabricating the same
A method for fabricating metal gate transistors and a polysilicon resistor is disclosed. First, a substrate having a transistor region and a resistor region is provided. A polysilicon layer is then formed on the substrate to cover the transistor region and the resistor region of the substrate. Next, a portion of the polysilicon layer disposed in the resistor is removed, and the remaining polysilicon layer is patterned to create a step height between the surface of the polysilicon layer disposed in the transistor region and the surface of the polysilicon layer disposed in the resistor region.
United Microelectronics Corp.
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Chien-Ming Che-Hua Tian-Fu Chih-Hao Chien-Ting Cheng-Hsien Guang-Hwa Li-Wei Yi-Wen
Lai Hsu Chiang Yu Lin Chou Ma Cheng Chen