Slater & Matsil, L.L.P.
Low-k interconnect structures with reduced RC delay
A method for forming an integrated circuit includes forming a low-k dielectric layer over a semiconductor substrate, etching the low-k dielectric layer to form an opening, forming a dielectric barrier layer covering at least sidewalls of the opening, performing a treatment to improve a wetting ability of the dielectric barrier layer, and filling the opening with a conductive material, wherein the conductive material is in contact with the dielectric barrier layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H
H01L H01L
inventional inventional
Chung-Chi Chia-Cheng Keng-Chu Tien-I Ting-Yu Shwang-Ming Chen-Hua
Ko Chou Lin Bao Shen Jeng Yu