Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Method for forming a lower electrode by using an electroplating method
A method for manufacturing a semiconductor device can form a thick lower electrode made of Pt. The method begins with the preparation of an active matrix provided with at least one transistor, a plurality of conductive plugs electrically connected to the transistors and an insulating layer formed around the conductive plugs. Thereafter, a seed layer is formed on top of the active matrix and a dummy oxide layer is formed on top of the seed layer. Then, the dummy oxide layer is patterned into a predetermined configuration, thereby exposing portions of the seed layer which are located on top of the conductive plugs. The exposed portions are filled with a conductive material to a predetermined thickness. The dummy oxide layer and portions of the seed layer which are not covered with the conductive material are removed, thereby obtaining lower electrodes. A capacitor dielectric layer is on the lower electrodes. Finally, an upper electrode layer is formed on the capacitor dielectric layer.
Hyundai Electronics Industries Co., LTD
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Kwon Hyung-Bok Chung-Tae Heung-Sik
Hong Choi Kim Kwak