Jianq Chyun IP Office
Resistive random access memory cell and resistive random access memory module
A resistive random access memory (RRAM) cell including a first electrode, a second electrode, and a plurality of repeated sets of layers is provided. Each of the sets of layers includes a resistance-changing layer, a barrier layer, and an ionic exchange layer between the resistance-changing layer and the barrier layer, wherein a thickness of each of the resistance-changing layer, the barrier layer and the ionic exchange layer exceeds a Fermi wavelength, and the thickness each of the resistance-changing layer and ionic exchange layer are less than an electron mean free path. Further, a RRAM module including the aforesaid RRAM cell and a switch is also provided.
Industrial Technology Research Institute
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G11C G11C H01L H01L H01L G11C G11C
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Heng-Yuan Frederick T. Yu-Sheng
Lee Chen Chen