Kilpatrick Townsend & Stockton LLP
Method to improve gate dielectric quality for FinFET
A method for manufacturing a semiconductor device includes providing a substrate structure comprising a substrate, a plurality of fins on the substrate and a hardmask on the fins, forming an insulating layer on the substrate structure covering the fins and the hardmask, removing a portion of the insulating layer by etching to expose the hardmask, removing the hardmask, and performing a fluorine ion implantation into a top portion of the fins. The implanted fluorine ions passivate dangling bonds in the top portion of the fins, thereby improving the reliability of the semiconductor device.
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
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Li