Fliesler, Dubb, Meyer & Lovejoy
Multistepped threshold convergence for a flash memory array
 A method of converging threshold voltages of memory cells in a flash EEPROM array after the memory cells have been erased, the method including applying a gate voltage having an initial negative value which is increased to a more positive value in steps during application of a drain disturb voltage. By applying a gate voltage with an initial negative value, leakage current during convergence is reduced enabling all cells on bit lines of the array to be converged in parallel. 
Advanced Micro Devices, Inc.
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Jian Shane C. Lee E. Nader
Chen Hollmer Cleveland Radjy