Schwabe, Williamson & Wyatt, P.C.
Techniques and configuration for stacking transistors of an integrated circuit device
Embodiments of the present disclosure provide techniques and configurations for stacking transistors of a memory device. In one embodiment, an apparatus includes a semiconductor substrate, a plurality of fin structures formed on the semiconductor substrate, wherein an individual fin structure of the plurality of fin structures includes a first isolation layer disposed on the semiconductor substrate, a first channel layer disposed on the first isolation layer, a second isolation layer disposed on the first channel layer, and a second channel layer disposed on the second isolation layer, and a gate terminal capacitively coupled with the first channel layer to control flow of electrical current through the first channel layer for a first transistor and capacitively coupled with the second channel layer to control flow of electrical current through the second channel layer for a second transistor. Other embodiments may be described and/or claimed.
Intel Corporation
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Han Wui Van H. Ravi Gilbert Niloy Jack T. Marko Willy Charles C.
Then Le Pillarisetty Dewey Mukherjee Kavalieros Radosavljevic Rachmady Kuo