F. Chau & Associates, LLC
Method of fabricating semiconductor device
A method of fabricating a semiconductor device is provided. The method includes forming a low-k dielectric layer on a semiconductor substrate, forming a mask pattern on the low-k dielectric layer, and dry etching the low-k dielectric layer using the mask pattern as an etch mask. A dry etching gas is used for the dry etching of the low-k dielectric layer. The dry etching gas includes a mixture of a gas containing chlorine atoms and at least one gas selected from a group consisting of a gas containing oxygen atoms, a gas containing nitrogen atoms, and an inert gas. The dry etching gas does not contain fluorine atoms.
Samsung Electronics Co., Ltd.
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inventional inventional inventional inventional
Il-Goo Ju-Hyuck
Kim Chung