Ryan, Mason & Lewis, LLP
Fin field-effect transistor with reduced parasitic capacitance and reduced variability
A method for manufacturing a semiconductor device includes patterning a plurality of semiconductor fins on a semiconductor substrate, and replacing at least two of the plurality of semiconductor fins with a plurality of dummy fins including a dielectric material. A gate structure is formed on and around the plurality of semiconductor fins and the plurality of dummy fins, and a source/drain contact is formed adjacent the gate structure.
International Business Machines Corporation
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Ruilong Chanro Juntao Kangguo
Xie Park Li Cheng