Heslin Rothenberg Farley & Mesiti P.C.
Method of forming self aligned continuity blocks for mandrel and non-mandrel interconnect lines
A method of forming a pattern for interconnect lines in an integrated circuit includes providing a structure having a first lithographic stack, a mandrel layer and a pattern layer disposed over a dielectric stack. Patterning the structure to form mandrels in the mandrel layer and disposing a spacer layer over the mandrels. Etching the spacer layer to form spacers disposed on sidewalls of the mandrels. The spacers and mandrels defining beta and gamma regions. A beta region includes a beta block mask portion and a gamma region includes a gamma block mask portion of the pattern layer. The method also includes etching a beta pillar over the beta block mask portion and etching a gamma pillar over the gamma block mask portion. The method also includes etching the structure to form a pattern in the pattern layer, the pattern including the gamma and beta block mask portions.
GLOBALFOUNDRIES INC.
H H H H
H01L H01L H01L H01L
inventional inventional additional inventional
Wenhui Jia Guillaume Yan Chenchen Jongwook Lei
Wang Zeng Bouche Wang Wang Kye Yuan