Kirton McConkie
Power semiconductor and manufacturing method thereof
A power semiconductor includes a semiconductor substrate, a metal oxide semiconductor layer, a N-type buffer layer and a P-type injection layer. The semiconductor substrate has a first surface and a second surface. The metal oxide semiconductor layer is formed on the first surface for defining a N-type drift layer of the semiconductor substrate. The N-type buffer layer is formed on the second surface through ion implanting, and the P-type injection layer is formed on the N-type buffer layer through ion implanting. By utilizing the semiconductor substrate having drift layer and forming the N-type buffer layer and the P-type injection layer on the second surface of the semiconductor substrate through ion implanting, the ion concentration is adjustable. As a result, the electron hole injection efficiency and the width of depletion region are easily adjusted, the fabricating processes are simplified, and the fabricating time and cost are reduced.
MOSEL VITALEC INC.
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inventional inventional inventional
Chon-Shin Chien-Chung Chien-Ping Shin-Chi I-Hsien Mao-Song
Jou Chu Chang Lai Tang Tseng