Slater Matsil, LLP
Backside structure and methods for BSI image sensors
A back side image sensor and method of manufacture are provided. In an embodiment a bottom anti-reflective coating is formed over a substrate, and a metal shield layer is formed over the bottom anti-reflective coating. The metal shield layer is patterned to form a grid pattern over a sensor array region of the substrate, and a first dielectric layer and a second dielectric layer are formed to at least partially fill in openings within the grid pattern.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H Y Y H H H H H H H
H01L H01L Y02E Y02P H01L H01L H01L H01L H01L H01L H01L
inventional inventional additional additional inventional inventional additional inventional inventional inventional inventional
Keng-Yu Jen-Cheng Dun-Nian Min-Feng Shuang-Ji Chun-Chieh Wen-De
Chou Liu Yaung Kao Tsai Chuang Wang