Roberts Mlotkowski Safran Cole & Calderon P.C.
Structure with local contact for shorting a gate electrode to a source/drain region
The present disclosure relates to semiconductor structures and, more particularly, to contacts for local connections and methods of manufacture. The structure includes: at least one contact electrically shorted to a gate structure and a source/drain contact and located below a first wiring layer; and gate, source and drain contacts extending from selected gate structures and electrically connecting to the first wiring layer.
GLOBALFOUNDRIES INC.
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Youngtag Jongwook Jia Wenhui Xuelian
Woo Kye Zeng Wang Zhu