William Park & Associates Ltd.
Memory device of performing precharge operation and method of operating the same
The present technology relates to a memory device and a method of operating the same. The memory device includes a memory block, a first page buffer group and a second page buffer group connected to bit lines of the memory block, and control logic configured to control the first page buffer group and the second page buffer group to perform a sense node precharge operation partially simultaneously.
SK hynix Inc.
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Hyung Jin
Choi