Heslin Rothenberg Farley & Mesiti P.C.
Integrated circuit having multiple threshold voltages
In one aspect there is set forth herein an integrated circuit having a first plurality of field effect transistors and a second plurality of field effect transistor, wherein field effect transistors of the first plurality of field effect transistors each have a first gate stack and wherein field effect transistors of the second plurality of field effect transistors each have a second gate stack, the second gate stack being different from the first gate stack by having a metal layer common to the first gate stack and the second gate stack that includes a first thickness at the first gate stack and a second thickness at the second gate stack.
GLOBALFOUNDRIES INC.
H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional additional inventional additional inventional inventional inventional inventional inventional
Manoj Bongki Srikanth Balaji Manfred Jin Ping Richard J. Rohit
Joshi Lee Samavedam Eller Liu Carter Pal