McDermott Will & Emery LLP
Semiconductor light emitting device and method of manufacturing the same
Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.
Samsung LED Co., Ltd.
H H
H01L H01L
inventional additional
Yu Seung Jin Hyun Sang Bum Hyun Soo Kwang Ki Sang Yeob Pun Jae
Kim Lee Lee Kim Choi Song Choi