Maschoff Brennan
Semiconductor structure and methods of forming the same
A semiconductor structure and the method of forming the same are provided. The method of forming a semiconductor structure includes forming a recess feature in a basal layer, forming a metal layer on the basal layer, exposing the metal layer to a tungsten halide gas to form an oxygen-deficient metal layer, and forming a bulk tungsten layer on the oxygen-deficient metal layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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inventional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Da-Yuan Chia-Ching Chung-Chiang Ming-Hsing Cheng-Yen Chun-Yuan Hsueh-Wen
Lee Lee Wu Tsai Tsai Chou Tsau