Haynes and Boone, LLP
FinFET for device characterization
A method and system is disclosed for providing access to the body of a FinFET device. In one embodiment, a FinFET device for characterization comprises an active fin comprising a source fin, a depletion fin, and a drain fin; a side fin extending from the depletion fin and coupled to a body contact for providing access for device characterization; and a gate electrode formed over the depletion fin and separated therefrom by a predetermined dielectric layer, wherein the gate electrode and the dielectric layer thereunder have a predetermined configuration to assure the source and drain fins are not shorted.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Fu-Liang Chang-Yun Hao-Yu Cheng-Chuan
Yang Chang Chen Huang