Scully, Scott, Murphy & Presser, P.C.
Directly forming SiGe fins on oxide
Semiconductor mandrel structures are formed extending upward from a remaining portion of a semiconductor substrate. A first oxide isolation structure is formed on exposed surfaces of the remaining portion of the semiconductor substrate and between each semiconductor mandrel structure. A silicon germanium alloy fin is formed on opposing sidewalls of each semiconductor mandrel structure that is present in a pFET device region of the semiconductor substrate and directly on a surface of each first oxide isolation structure. Each semiconductor mandrel structure is removed and a second oxide isolation structure is formed between each first oxide isolation structure and extending beneath a bottommost surface of each first oxide isolation structure.
International Business Machines Corporation
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Juntao Hong Kangguo Junli
Li He Cheng Wang