Fitzpatrick, Cella, Harper & Scinto
Process for forming a silicon-based film on a substrate using a temperature gradient across the substrate axis
In a process for forming a silicon-based film on a substrate according to the present invention, the substrate has a temperature gradient in the thickness direction thereof in the formation of the silicon-based film and the temperature gradient is made such that a deposition surface of the substrate has a higher temperature than a backside or the direction of the temperature gradient is reversed. With this configuration, the present invention provides a silicon-based thin film having good properties at a high deposition rate and provides a semiconductor device including it. The present invention also provides a semiconductor device including the silicon-based thin films that has good adhesion and weather-resisting properties and that can be manufactured in a short tact time.
Canon Kabushiki Kaisha
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Masafumi Akira Ryo Shotaro Yuzo Takaharu Shuichiro Koichiro
Sano Sakai Hayashi Okabe Koda Kondo Sugiyama Moriyama