F. Chau & Associates, LLC
Catalyst-free growth of single-wall carbon nanotubes
A method for growing single-walled nanotubes comprises providing a silicon carbide semiconductor wafer comprising a silicon face and a carbon face, and annealing the silicon carbide semiconductor wafer in a vacuum at a temperature of at least about 1300 degrees Celsius, inducing formation of single wall carbon nanotubes on the silicon face.
International Business Machines Corporation
Y B C Y C
Y10S B82Y C30B Y10S C30B
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Marko Phaedon Vincent Richard
Radosavljevic Avouris Derycke Martel