Marger Johnson & McCollom, P.C.
Semiconductor memory device and a method for generating a block selection signal of the same
The present invention discloses a semiconductor memory device and a method of generating a block selection signal for the semiconductor memory device. The semiconductor memory device includes 2n groups comprised of m memory cell array blocks and each of the memory cell array blocks has (2k+a) word lines. The semiconductor memory device further includes a first block selection signal generating circuit for generating first block selection signals for selecting one group of the 2n groups by decoding a n-bit row address, a second block selection signal generating circuit for generating second block selection signals for selecting one memory cell array block in every group by decoding a l-bit row address, and a third block selection signal generating circuit for generating third block selection signals for selecting one memory cell array block out of (m&times;2n) memory cell array blocks by receiving the first block selection signals and the second block selection signals.The semiconductor memory device having (2k+a) word lines in each memory cell array block occupies less area on a semiconductor substrate than a conventional semiconductor memory device having 2k word lines.
Samsung Electronics Co., Ltd.
G
G11C
inventional
Jung-Yong Young-Gu
Choi Kang