Harness, Dickey & Pierce, P.L.C.
Method of manufacturing light emitting diode with current blocking structure
The present invention provides a method of manufacturing a light emitting diode based on an epitaxial layer structure. The epitaxial layer structure includes a substrate of a first conductivity type, a lower cladding layer of the first conductivity type formed on a top side of the substrate, an active layer formed on the lower cladding layer, an upper cladding layer of a second conductivity type formed on the active layer, at least one upper aluminum-rich layer formed on the upper cladding layer, and a cap layer formed on the at least one upper aluminum-rich layer. The method includes the steps of forming an opening hole in the epitaxial layer structure for passing through each upper aluminum-rich layer, oxidizing a predetermined region of each upper aluminum-rich layer, filling the opening hole with an insulating material, and forming an upper electrode on the cap layer and a lower electrode on a back side of the substrate.
United Epitaxy Company, Ltd.
H
H01L
inventional
Chih-Sung Holin Tzer-Perng
Chang Chang Chen