Slater Matsil, LLP
Semiconductor device and method
An improved dummy gate and a method of forming the same are disclosed. In an embodiment, the method includes depositing a first material in a trench, the trench being disposed between a first fin and a second fin; etching the first material to expose an upper portion of sidewalls of the trench; and depositing a second material on the first material without the second material being deposited on the exposed upper portion of the sidewalls of the trench.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H H H
H01L H01L H01L H01L H01L
inventional inventional inventional inventional additional
Yee-Chia Meng-Ku Chii-Horng Pei-Ren Chia-Ao Cheng-Po
Yeo Chen Li Jeng Chang Chau