F. Chau & Associates, LLC.
Method for cleaning a processing chamber and method for manufacturing a semiconductor device
A method for cleaning a processing chamber and manufacturing a semiconductor device by removing impurities from a substrate in the processing chamber with a plasma of a first gas including hydrogen gas. After the substrate is removed from the processing chamber, the processing chamber is etched with the plasma of a non-hydrogenous second gas. Thus, the etching selectivity can be improved and the particles are prevented from depositing and/or forming on the substrate.
Samsung Electronics Co., Ltd.
C C H H Y
C23C C23C H01L H01L Y10S
inventional inventional inventional inventional additional
Eung-Joon Jung-wook Ji-Soon Jin-Gi Hyeon-Deok
Lee Kim Park Hong Lee