Westerman, Hattori, Daniels & Adrian, LLP
Manufacturing method of a semiconductor device
There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
Fujitsu Semiconductor Limited
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Junichi Kazuaki Tomohiro Wensheng Kenji Ko Yoshimasa Masaki Naoyuki Aki
Watanabe Takai Takamatsu Wang Nomura Nakamura Horii Kurasawa Sato Dote