Volentine & Whitt, PLLC
Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices
A method of programming a silicon oxide nitride oxide semiconductor (SONOS) memory device is provided. The SONOS memory device includes a substrate, first and second impurity regions spaced apart on the substrate, a gate oxide layer formed over the substrate between the first and second impurity regions, a trap layer formed over the gate oxide layer, an insulation layer formed over the trap layer, and a gate electrode formed over the insulation layer. The method of programming the SONOS device includes writing data into the SONOS memory device by applying a first voltage to the first impurity region, a gate voltage to the gate electrode, and a second voltage to the second impurity region, where the second voltage is a negative voltage.
Samsung Electronics Co., Ltd.
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Youn-seok Jae-woong Hee-soon Ju-hyung Jeong-hee Chung-woo
Jeong Hyun Chae Kim Han Kim