Haynes and Boone, LLP
Optical transmission improvement on multi-dielectric structure in advance CMOS imager
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a sensor element disposed in a semiconductor substrate; an inter-level dielectric (ILD) disposed on the semiconductor substrate; and a trench disposed in the ILD, overlying and enclosing the sensor element, and filled with a first dielectric material.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H
H01L H01L H01L
inventional inventional inventional
Dun-Nian Tzu-Hsuan Shine Wen-De
Yaung Hsu Chung Wang