Dickstein Shapiro LLP
Different gate oxides thicknesses for different transistors in an integrated circuit
An integrated circuit and gate oxide forming process are disclosed which provide a gate structure that is simple to integrate with conventional fabrication processes while providing different gate oxide thicknesses for different transistors within the integrated circuit. For a flash memory, which may utilize the invention, the different gate oxide thicknesses may be used for lower voltage transistors, memory array transistors, and higher voltage transistors.
Micron Technology, Inc.
H H H
H01L H01L H01L
inventional inventional inventional
Xianfeng
Zhou