Jianq Chyun IP Office
Non-volatile memory with improved erasing operation
A method for performing an erase operation is disclosed in a non-volatile memory having a plurality of memory cells. At least one memory cell is programmed having a threshold voltage level in a first region before programming, and after programming the memory cell has a threshold voltage level in a second region, wherein the second region is higher in threshold voltage than the fist region. The erasing operation implements a programming of memory bits that can inject negative charge carriers or electrons into a memory cell instead of using the conventional technique of injecting hot holes into the memory cell. This can avoid room temperature drift and charge loss caused by hot hole injection.
MACRONIX International Co., Ltd.
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Chin-Hung Wen-Chiao Chun-Hsiung Kuen-Long
Chang Ho Hung Chang