Semiconductor device and method of fabricating the same
A semiconductor device includes a first buried gate structure in a peripheral circuit area of a semiconductor substrate, and a second gate structure formed on the semiconductor substrate. A gate insulating layer of a program transistor is thinly formed to be easily ruptured, and a gate insulating layer of a select transistor is thickly formed to improve reliability of the select transistor.
SK Hynix Inc.
H H
H01L H01L
inventional inventional
Yong Sun
Jung