Method of making wire connection in semiconductor device
A method of making a wire connection in a semiconductor device, the method comprising: (a) forming an under bump metallurgy (UBM) over a chip including the bonding pad formed thereon; (b) forming a gold bump on the UBM at a location corresponding to the bonding pad; (c) etching the UBM with the gold bump as a mask; and (d) connecting one end of a bonding wire to a conductive lead by ball bonding and the other end thereof to the gold bump on the bonding pad of the chip by stitch bonding. The conductive lead is located external to the chip as a part of a lead frame or a substrate. Alternatively, the semiconductor chip having bumps may be formed by electroless plating a nickel layer on the bonding pads of the chip, and followed by electroless plating a gold layer on the nickel layer. It is noted that the semiconductor chip having metal bumps is formed by wafer bumping process. Therefore, it is easy to obtain metal bumps having a uniform profile thereby significantly enhancing the reliability of stitching bonding formed on the metal bumps.
Advanced Semiconductor Engineering, Inc.
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Yu Fang Jian Wen Min Lung
Tsai Chen Huang