Thomas, Kayden, Horstemeyer & Risley
Double-diffused-drain MOS device with floating non-insulator spacers
A double-diffused-drain metal-oxide-semiconductor device has a gate structure overlying a semiconductor substrate, a pair of insulator spacers on the sidewalls of the gate structure respectively, and a pair of floating non-insulator spacers embedded in the pair of insulator spacers respectively.
Taiwan Semiconductor Manufacturing Co., Ltd.
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inventional inventional inventional
Feng-Chi Hua-Shu Shih-Chin Hung-Lin
Hung Wu Lee Chen