Antonelli, Terry, Stout & Kraus, LLP
Method of manufacturing semiconductor integrated circuit device having insulatro film formed from liquid containing polymer of silicon, oxygen, and hydrogen
An SOG film 16 obtained by heat-treating a polysilazan type SOG film at high temperature of about 800&deg; C. is used as a planarized insulating film to be formed on the gate electrode 9 of a MISFET (Qs, Qn, Qp). A polysilazan SOG film 57 not subjected to such a heat treatment is used as interlayer insulating film arranged among upper wiring layers (54, 55, 56, 62, 63).
Hitachi ULSI Systems Co., Ltd. Hitachi, Ltd.
H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional
Masayuki Hiroyuki Hiroyuki Takuya Masayoshi Masayoshi Katsuhiko
Kojima Maruyama Uchiyama Fukuda Saito Hirasawa Hotta