Magnetoresistive random access memory
A semiconductor device includes: a first metal-oxide semiconductor (MOS) transistor and a second MOS transistor on a substrate; a magnetic tunneling junction (MTJ) between the first MOS transistor and the second MOS transistor; a first interlayer dielectric (ILD) layer on one side of the MTJ and above the first MOS transistor; and a second ILD layer on another side of the MTJ and above the second MOS transistor.
UNITED MICROELECTRONICS CORP.
H H
H01L H01L
inventional inventional
Hung-Yueh Kun-I
Chen Chou