Harness, Dickey & Pierce, P.L.C.
Integrated circuit devices and method of manufacturing the same
An integrated circuit device includes a fin-type active region extending on a substrate in a first direction parallel to a top surface of the substrate; a gate structure extending on the fin-type active region and extending in a second direction parallel to the top surface of the substrate and different from the first direction; and source/drain regions in a recess region extending from one side of the gate structure into the fin-type active region, the source/drain regions including an upper semiconductor layer on an inner wall of the recess region, having a first impurity concentration, and including a gap; and a gap-fill semiconductor layer, which fills the gap and has a second impurity concentration that is greater than the first impurity concentration.
Samsung Electronics Co., Ltd.
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Geun-hee Seok-hoon Jin-yeong Seung-hun Jeong-ho
Jeong Kim Joe Lee Yoo