Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region
A semiconductor device includes a substrate having an array region defined thereon, a ring of magnetic tunneling junction (MTJ) region surrounding the array region, wherein the ring of MTJ region comprises a first MTJ, and metal interconnect patterns overlapping part of the ring of MTJ region. Preferably, each of the metal interconnect patterns includes a first metal interconnection connected to the first MTJ directly.
UNITED MICROELECTRONICS CORP.
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G11C H01L H01L H01L H01L
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Jian-Cheng Chung-Liang Yu-Ping Yu-Ruei
Chen Chu Wang Chen