Slater & Matsil, L.L.P.
High-gain vertex lateral bipolar junction transistor
A lateral bipolar junction transistor having improved current gain and a method for forming the same are provided. The transistor includes a well region of a first conductivity type formed over a substrate, at least one emitter of a second conductivity type opposite the first conductivity type in the well region wherein each of the at least one emitters are interconnected, a plurality of collectors of the second conductivity type in the well region wherein the collectors are interconnected to each other, and a plurality of base contacts of the first conductivity type in the well region wherein the base contacts are interconnected to each other. Preferably, all sides of the at least one emitters are adjacent the collectors, and none of the base contacts are adjacent the sides of the emitters. The neighboring emitter, collectors and base contacts are separated by spacings in the well region.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H
H01L H01L
inventional inventional
Chih-Sheng Shuo-Mao Chih-Ping
Chang Chen Chao