Gauthier & Connors LLP
Method and structure of germanium laser on silicon
A laser structure includes at least one active layer having doped Ge so as to produce light emissions at approximately 1550 nm from the direct band gap of Ge. A first confinement structure is positioned on a top region of the at least one active layer. A second confinement structure is positioned on a bottom region the at least one active layer.
Massachusetts Institute of Technology
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Lionel C. Sajan Jurgen Dong Jifeng
Kimerling Saini Michel Pan Liu