Ion source chamber of a high energy implanter with a filtering device
 The present invention relates to an ion source chamber of a high energy implanter. The ion source chamber comprises a main chamber for generating ions for ion implantation, a vent-pipe having two open ends, one end of the vent-pipe being connected to the main chamber for releasing air from the main chamber, a releasing valve connected to another end of the vent-pipe for releasing the air in the main chamber when the pressure of the air in the main chamber exceeds a predetermined pressure, and a filtering device installed between the vent-pipe and the releasing valve for filtering impurities contained in the air carried by the vent-pipe so as to prevent the impurities from falling into the releasing valve. 
Mosel Vitelic Inc.
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Dong-Tay Chih-Hsien Hua-Jen Pei-Wei
Tsai Chang Tseng Tsai