Christensen O'Connor Johnson Kindness PLLC
Method of reducing in film particle number in semiconductor manufacture
 A short period of low power plasma-activated process is imposed after film-forming to remove residual chemical compound. This method includes flowing one or more carrier gases with one or more reaction gases into the chamber, reducing plasma power to react the residual chemical compound with the reaction gases, and pumping to evacuate reaction product from the reaction chamber. The reduced plasma can be achieved by increasing gap spacing at a constant power or gradient power. Alternatively, it can be obtained by keeping the same spacing as the main process with a small power source. 
Applied Materials, Inc. Vanguard International Semiconductor Corporation
Y C C
Y10S C23C C23C
additional inventional inventional
Hung-Chuan Shih-Chieh Liang-Gi Yuh-Min
Chen Su Yao Lin