Arent Fox LLP
Selective W-CVD method and method for forming multi-layered Cu electrical interconnection
A substrate provided thereon with an electrical insulating film which carries holes or the like filled with a Cu-containing electrical interconnection film is subjected to a pre-treatment in which the surface of the electrical insulating film and that of the Cu-containing electrical interconnection film are treated at a temperature of not more than 300° C. using, in a predetermined state, a gas of a compound containing an atom selected from the group consisting of N, H and Si atoms within the chemical formula thereof, before selectively forming a W-capping film on the electrical interconnection film. After the completion of the pre-treatment, a W-capping film is selectively formed on the electrical interconnection film and then an upper Cu electrical interconnection is further formed.
Ulvac, Inc.
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Nobuyuki Narishi Masamichi
Kato Gonohe Harada