Fully self-aligned high speed low power MOSFET fabrication
 Channel doping and gate lithography are simulatneously performed by focusing an ion beam into the wafer through a positive or negative photoresist that is sensitive to the ion beam. Additional fabrication is then performed to provide a gate that is self-aligned with the doped channel. 
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inventional inventional additional inventional inventional
Weizhong John Marty
Wang Melngailis Peckerar