Hoffman Warnick LLC
Bulk FinFET ESD device
Aspects of the disclosure provide a dual electrostatic discharge (ESD) protection device in fin field effect transistor (FinFET) process technology and methods of forming the same. In one embodiment, the dual ESD protection device includes: a bulk silicon substrate; a shallow trench isolation (STI) region formed over the bulk silicon substrate; a first ESD device positioned above the STI region; and a second ESD device positioned below the STI region, wherein the first ESD device conducts current above the STI region and the second ESD device conducts current below the STI region.
International Business Machines Corporation
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Souvick Christopher S. Robert J. JunJun Tom C.
Mitra Putnam Gauthier, Jr. Li Lee