Eschweiler & Potashnik, LLC
Methodology for pattern density optimization
The present disclosure relates to a method of improving pattern density with a low OPC (optical proximity correction) cycle time, and an associated apparatus. In some embodiments, the method is performed by performing an initial data preparation process on an IC design including a graphical representation of a layout used to fabricate an integrated chip. The initial data preparation process is performed by using a data preparation element to generate a modified IC design having modified shapes that are modified forms of shapes within the IC design. One or more low-pattern-density areas of the modified IC design are identified using a local density checking element. One or more dummy shapes are added within the one or more low-pattern-density areas using a dummy shape insertion element. The one or more dummy shapes are separated from the modified shapes by a non-zero space.
Taiwan Semiconductor Manufacturing Co., Ltd.
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G06F G03F
inventional inventional
Ru-Gun Ping-Chieh Chun-Hung Cheng-Hsuan Cheng-Kun Wen-Hao Wen-Chun Ming-Hui Hung-Chun
Liu Wu Wu Huang Tsai Liu Huang Chih Wang