Tung & Associates
High aspect ratio gap fill application using high density plasma chemical vapor deposition
A high density plasma chemical vapor deposition process including exciting gas mixture to create a plasma including ions, and directing the plasma into a dense region above the upper surface of the semiconductor wafer, heating the wafer using an additional heat source, and allowing a material from the plasma to deposit onto the semiconductor wafer.
Taiwan Semiconductor Manufacturing Co., Ltd.
C H C C
C23C H01L C23C C23C
inventional additional inventional inventional
Szu-An Chia-Hui Chien-Feng Ming-Te Yin-Ping Tsang-Yu Joung-Wei Ying-Hsiu Cheng-Liang
Wu Lin Lin Chen Lee Liu Liou Tsai Chang