Harness, Dickey, & Pierce, P.L.C.
Method of operating magnetic random access memory device
Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure.
Samsung Electronics Co., Ltd.
G G G
G11C G11C G11C
inventional inventional inventional
Hyung-soon Seung-yeon In-jun Kee-won Kwang-seok Sun-ae Seung-jun
Shin Lee Hwang Kim Kim Seo Lee