Myers Bigel Sibley & Sajovec
Charge-trap nonvolatile memory devices
Nonvolatile memory devices including device isolation patterns on a semiconductor substrate are provided. The device isolation patterns define a cell active region and a peripheral active region of the semiconductor substrate. Cell gate electrodes are provided that cross over the cell active regions. Memory cell patterns are provided between the cell gate electrodes and the cell active regions and extend toward the device isolation patterns. A tunnel insulation film is provided between the memory cell pattern and the cell active region. Related methods of fabricating nonvolatile memory devices are also provided herein.
Samsung Electronics Co., Ltd.
H H
H01L H01L
inventional inventional
Sang-Hun Chang-Seok Jae-Sung Ju-Hyung Jung-Dal Jong-Sun
Jeon Kang Sim Kim Choi Sel