H.C. Park & Associates, PLC
Near UV light emitting device
Disclosed herein is an ultraviolet (UV) light emitting device. The light emitting device includes an n-type contact layer including a GaN layer; a p-type contact layer including a GaN layer; and an active layer of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, the active area configured to emit near ultraviolet light at wavelengths of 365 nm to 309 nm.
Seoul Viosys Co., Ltd.
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inventional inventional additional additional
Hyo Shik Chang Suk A Ram Cha Mi So Hwa Mok
Choi Han Lee Ko Kim