Eschweiler & Potashnik, LLC
Image sensor scheme for optical and electrical improvement
The present disclosure relates to an image sensor integrated chip having a deep trench isolation (DTI) structure having a reflective element. In some embodiments, the image sensor integrated chip includes an image sensing element arranged within a substrate. A plurality of protrusions are arranged along a first side of the substrate over the image sensing element and one or more absorption enhancement layers are arranged over and between the plurality of protrusions. A plurality of DTI structures are arranged within trenches disposed on opposing sides of the image sensing element and extend from the first side of the substrate to within the substrate. The plurality of DTI structures respectively include a reflective element having one or more reflective regions configured to reflect electromagnetic radiation. By reflecting electromagnetic radiation using the reflective elements, cross-talk between adjacent pixel regions is reduced, thereby improving performance of the image sensor integrated chip.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H
H01L H01L
inventional inventional
Yeur-Luen Keng-Yu Cheng-Hsien Cheng-Yuan Sheng-Chan
Tu Chou Chou Tsai Li