Hill, Van Santen, Steadman & Simpson
Method for forming an ultrafine metal pattern using an electron beam
 In a method for forming a pattern, by selectively irradiating a charged particle beam onto a substrate in an atmosphere containing a raw material gas, a resist pattern comprising a material which is produced on the substrate from the raw material gas is formed, wherein a pressure of the raw material gas is set to 10.sup.-7 to 10.sup.-5 Torr, an accelerating voltage of the charged particle beam is set to 0.5 to 6 kV, and a beam current of the charged particle beam is set to 10.sup.-13 to 10.sup.-7 A. Thus, a resist pattern of an ultrafine width can be stably formed in a relatively short time. Further, in a method for forming a pattern, by irradiating a charged particle beam onto a substrate in an atmosphere containing a gaseous negative type resist, a cross-linking reaction of the negative type resist molecules adsorbed on the surface of the substrate is caused, and a pattern comprising the negative type resist molecules which caused the cross-linking reaction is formed, so that a pattern which has an ultrafine width and can be easily removed by the wet process can be formed. 
Sony Corporation
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inventional inventional additional additional
Kenji Yoshifumi Akira
Funato Mori Ishibashi