Eschweiler & Associates, LLC
RRAM cell with PMOS access transistor
The present disclosure relates to an integrated chip comprising an RRAM cell that is driven by a PMOS transistor, and an associated method of formation. In some embodiments, the integrated chip has a PMOS transistor arranged within a semiconductor substrate. A resistive RRAM cell is arranged within an inter-level dielectric (ILD) layer overlying the semiconductor substrate. The RRAM cell has a first conductive electrode separated from a second conductive electrode by a dielectric data storage layer having a variable resistance. The first conductive electrode is connected to a drain terminal of the PMOS transistor by one or more metal interconnect layers. The use of a PMOS transistor to drive the RRAM cell allows for impact of the body effect to be reduced and therefore allows for a reset operation to be performed at a low power and in a short amount of time.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chih-Yang Jen-Sheng Chin-Chieh Yu-Wen Kuo-Chi Wen-Ting Sheng-Hung Hsia-Wei
Chang Yang Yang Liao Tu Chu Shih Chen