PECVD process for ULSI ARL
A deposition process for silicon oxycarbide films suitable for use as anti-reflection coatings is described. The, process is based on plasma enhanced CVD of silane mixed with methyl-silane, trimethyl-silane, or tetramethyl-silane (together with a carrier gas). Provided the relative gas flow rates are maintained within the ranges specified, films having excellent ARL properties are obtained, with photoresist patterns formed on said films being free of overhangs and footings.
Industrial Technology Research Institute
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H01L H01L G03F H01L H01L H01L C23C
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Hung-Wen Shyh-Dar Chung-I
Chiou Lee Chang