Haynes and Boone, LLP
Metal gate structure cutting process
A method includes providing a structure having first and second fins over a substrate and oriented lengthwise generally along a first direction and source/drain (S/D) features over the first and second fins; forming an interlayer dielectric (ILD) layer covering the S/D features; performing a first etching process at least to an area between the S/D features, thereby forming a trench in the ILD layer; depositing a dielectric material in the trench; performing a second etching process to selectively recess the dielectric material; and performing a third etching process to selectively recess the ILD layer, thereby forming a contact hole that exposes the S/D features.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Peng Fu-Kai Ching-Feng I-Wen Chen-Ming Chang-Yun Mei-Yun
Wang Yang Fu Wu Lee Chang Wang