Haynes and Boone, LLP
Method of forming butted contact
A method of fabricating a semiconductor device is disclosed. The method includes forming a first gate structure over a substrate, forming a source/drain feature in the substrate adjacent the first gate structure, forming a dielectric layer over the first gate structure and the source/drain feature, removing a portion of the dielectric layer to form a first trench exposing the first gate structure and the source/drain feature, forming a first conductive feature in the first trench, removing a first portion of the first gate structure to form a second trench and forming a second conductive feature in the second trench.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Yi-Hsiung Chih-Hao Chun-Hsiung Jia-Chuan Zhi-Chang Chia-Hao Wei-Hao
Lin Wang Lin You Lin Chang Wu