Patterson + Sheridan LLP
PECVD process
A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
APPLIED MATERIALS, INC.
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Michael Wenyoung Heung Lak Masaki Terrance Y. Sergey Juan Carlos Jianhua Zhijun Patrick Edward Todd Amit Kumar Ramprakash Bok Hoen Dmitriy Xinhai Thomas Nagarajan Jeongmin Shahid Jian J. Ganesh Mohamad A.
Tsiang Park Ogata Lee Starik Rocha-Alvarez Zhou Jiang Reilly Budiarto Egan Bansal Sankarakrishnan Kim Panasyuk Han Nowak Rajagopalan Lee Shaikh Chen Balasubramanian Ayoub