Myers Bigel, P.A.
Integrated circuit devices having through-silicon vias and methods of manufacturing such devices
An integrated circuit device includes a semiconductor structure, a through-silicon-via (TSV) structure that penetrates through the semiconductor structure and a connection terminal connected to the TSV structure. A metal capping layer includes a flat capping portion that covers the bottom surface of the connection terminal and a wedge-shaped capping portion that is integrally connected to the flat capping portion and that partially covers a side wall of the connection terminal. The metal capping layer may be formed by an electroplating process in which the connection terminal is in contact with a metal strike electroplating solution while a pulse-type current is applied.
Samsung Electronics Co., Ltd.
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Joo-hee Ji-soon Atsushi Byung-Iyul Ju-il Jeong-gi
Jang Park Fujisaki Park Choi Jin