Lalos & Keegan
Structures of modulation doped base hot electron transistors
 A three-terminal hot-electron device, in particular a two dimensional electron gas base transistor which can be fabricated by molecular beam epitaxy (MBE). The two-dimensional electron gas is induced in an undoped GaAs quantum well by a modulation doping is used as the base of the transistor and permits a common-base current gain .alpha. to be achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA. 
National Science Council
H
H01L
inventional
Chun-Yen
Chang