Ryan, Mason & Lewis, LLP
Mask removal for tight-pitched nanostructures
A method for manufacturing a semiconductor device includes forming a hardmask layer on a substrate, and patterning the hardmask layer into a plurality of hardmask portions. The method also includes forming a liner layer on the plurality of hardmask portions, and removing a portion of the liner layer from at least one hardmask portion of the plurality of hardmask portions. The removing exposes one or more surfaces of the at least one hardmask portion. In the method, the at least one hardmask portion and a remaining portion of the liner layer are removed. A pattern of remaining ones of the plurality of hardmask portions are transferred to the substrate to form one of a plurality of patterned substrate portions and a plurality of openings in the substrate.
International Business Machines Corporation
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Juntao Kangguo ChoongHyun
Li Cheng Lee