JCIPRNET
Semiconductor device and manufacturing method thereof
A semiconductor device includes a semiconductor substrate, a gate structure, a capacitor structure, and a conductive contact. The semiconductor substrate has at least one semiconductor fin thereon. The gate structure is disposed across the semiconductor fin. The capacitor structure is disposed on the gate structure. The capacitor structure includes a ferroelectric layer and a first metal layer disposed on the ferroelectric layer. The capacitor structure is sandwiched between the conductive contact and the gate structure.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chun-Chieh Chia-Cheng Chih-Sheng
Lu Ho Chang