Brinks Hofer Gilson & Lione
Manufacturing method of spin-valve magnetoresistive thin film element
 A spin-valve magnetoresistive element includes a plurality of layers. The magnetic moment of a first pinned magnetic layer is smaller than the magnetic moment of a second pinned magnetic layer. In this case, a magnetic field of 100 to 1,000 Oe is applied in a direction opposite to the direction for which obtaining of magnetization for the first pinned magnetic layer is desired, or a magnetic field of 5 kOe or greater is applied in the same direction as the direction for which obtaining of magnetization for the first pinned magnetic layer is desired. Thus, a first magnetization of the first pinned magnetic layer and the magnetic moment of a second pinned magnetic layer can be maintained in an antiparallel state. 
Alps Electric Co., Inc.
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Y10T B82Y G11B Y10T B82Y Y10T Y10T Y10T H01F G11B G01R G11B B82Y H01F
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Naoya Masamichi
Hasegawa Saito