Cushman, Darby & Cushman
Method for forming isolation regions in a semiconductor memory device
 A method for forming an isolation region within a semiconductor device is disclosed. A trench is first formed in a predefined isolation region of a semiconductor substrate. An oxidation blocking material is injected into the inside walls of the trench before growing a field oxide film inside the trench. Accordingly, the present invention can simplify the fabrication of isolation regions within a semiconductor device by directly implanting the oxidation blocking material at a predetermined angle into the inside walls of the trench which constitutes the isolation region. In the present invention, unlike conventional fabrication processes using spacers to prevent penetration of a field oxide film into the surface of semiconductor non-isolation regions, the need for spacers is obviated. 
Samsung Electronics Co., Ltd.
H H Y
H01L H01L Y10S
inventional inventional additional
Cheon-su Yun-gi Byeong-yeol
Bhan Kim Kim