Eschweiler & Potashnik, LLC
Systems and methods to mitigate nitride precipitates
A method of fabricating a semiconductor device is disclosed. A substrate having an oxide layer is provided. At least a portion of the oxide layer is removed and forms a nitride layer. The nitride layer is removed, leaving nitride precipitates. The nitride precipitates are removed using phosphoric acid.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Jung-Jui
Li