Spensley Horn Jubas & Lubitz
Semiconductor device and manufacturing method thereof
 A semiconductor device having an insulating film on a semiconductor substrate, first and second conductive gate electrode films and first and second source/drain having impurities and disposed opposite to each other. A length of the second gate electrode is smaller than that of the first one. The device further includes side wall insulating films formed bilaterally of the gate electrodes. The semiconductor device may be manufactured by the steps of forming the insulating film on the substrate, first and second conductive films and an MOS transistor gate electrode, effecting thermal annealing thereon, and performing ion-implantation of first and second impurities into the substrate with the gate electrode serving as a mask. The method further involves the step of forming a side-wall insulating film by effecting anisotropic etching. 
Seiko Epson Corporation
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Masahiro
Takeuchi