Myers Bigel Sibley & Sajovec
Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
Semiconductor switching devices include a first wide band-gap semiconductor layer having a first conductivity type. First and second wide band-gap well regions that have a second conductivity type that is opposite the first conductivity type are provided on the first wide band-gap semiconductor layer. A non-wide band-gap semiconductor layer having the second conductivity type is provided on the first wide band-gap semiconductor layer. First and second wide band-gap source/drain regions that have the first conductivity type are provided on the first wide band-gap well region. A gate insulation layer is provided on the non-wide band-gap semiconductor layer, and a gate electrode is provided on the gate insulation layer.
Cree, Inc.
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inventional inventional additional additional inventional additional additional inventional inventional
Qingchun
Zhang