Patterson + Sheridan LLP
PECVD apparatus and process
Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
Applied Materials, Inc.
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Masaki Sergey Mohamad A. Jeongmin Edward Terrance Y. Ramprakash Xinhai Ganesh Jian J. Nagarajan Todd Heung Lak Bok Hoen Shahid Thomas Amit Kumar Juan Carlos Zhijun Dmitriy Michael Jianhua Patrick
Ogata Starik Ayoub Lee Budiarto Lee Sankarakrishnan Han Balasubramanian Chen Rajagopalan Egan Park Kim Shaikh Nowak Bansal Rocha-Alvarez Jiang Panasyuk Tsiang Zhou Reilly