Slater & Matsil, L.L.P.
Structure to improve MOS transistor on-breakdown voltage
A novel MOS transistor structure and methods of making the same are provided. The structure includes a MOS transistor formed on a semiconductor substrate of a first conductivity type with a plug region of first conductivity type formed in the drain extension region of second conductivity type (in the case of a high voltage MOS transistor) or in the lightly doped drain (LDD) region of second conductivity type (in the case of a low voltage MOS transistor). Such structure leads to higher on-breakdown voltage. The inventive principle applies to MOS transistors formed on bulky semiconductor substrate and MOS transistors formed in silicon-on-insulator configuration.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Shen-Ping Tsung-Yi Wen-Liang
Wang Huang Wang