Eschweiler & Potashnik, LLC
One-time-programming (OTP) memory cell with floating gate shielding
A one-time programmable (OTP) memory cell with floating gate shielding is provided. A pair of transistors is arranged on a semiconductor substrate and electrically coupled in series, where the transistors comprise a floating gate. An interconnect structure overlies the pair of transistors. A shield is arranged in the interconnect structure, directly over the floating gate. The shield is configured to block ions in the interconnect structure from moving to the floating gate. A method for manufacturing an OTP memory cell with floating gate shielding is also provided.
Taiwan Semiconductor Manufacturing Co., Ltd.
G H H G H
G11C H01L H01L G11C H01L
inventional inventional inventional inventional inventional
Shyh-Wei Che-Jung Hung-Lin
Cheng Chu Chen