Onello & Mello LLP
Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture
This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.
Samsung Electronics Co., Ltd.
H
H01L
inventional
Jeong-Nam Woo-Gwan Doo-Won Hyung-Ho Yu-Kyung Im-Soo Chang-Sup
Han Shim Kwon Ko Kim Park Mun