Finnegan, Henderson, Farabow & Garrett
CMOS FET device with abnormal current flow prevention
 A CMOS FET device which comprises an N type semiconductor substrate; a P type well layer formed in the N type semiconductor substrate; a p-channel type MOS transistor provided in the N type semiconductor substrate; an n-channel type MOS transistor formed in the P type well layer; and a noise-absorbing capacitor provided at the input or output terminal of the MOS transistor or at a power supply section. 
Tokyo Shibaura Electric Co., Ltd.
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H03K H03K H01L
inventional inventional inventional
Yasoji Mitsuhiko Kazuo
Suzuki Ueno Satou