Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Semiconductor device including contact plug having an elliptical sectional shape
A semiconductor device includes a first MOS transistor, second MOS transistors, first contact plugs, and a second contact plug. The first MOS transistor with a first conductivity is formed on a semiconductor substrate. The second MOS transistors with a second conductivity are formed on the semiconductor substrate. The first contact plugs has a circular planar shape. The second contact plug has an elliptical planar shape and is formed on a source or a drain in one of the second MOS transistors. The first contact plugs are formed on sources or drains in the remaining second MOS transistors and the first MOS transistor.
Kabushiki Kaisha Toshiba
H H H G H G H
H01L H01L H01L G11C H01L G11C H01L
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Takuya Itaru Masato Shinichi Hiroyuki
Futatsuyama Kawabata Endo Watanabe Nitta