High density mask ROM having flat-type bank select
The present invention provides a read-only memory array having a flat-type structure. The read-only memory array comprises at least two memory banks having a plurality of memory cells. At least two inter-bank transistors are coupled to the two memory banks and shared by the two memory banks. Each inter-bank transistor is used for enabling to select the memory cells of the two memory banks. At least a contact commonly is coupled to the two memory banks through the two inter-bank transistors.
Macronix International Co., Ltd.
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inventional inventional inventional
Jing-Wen Ful-Long Nien-Chao
Chen Ni Yang