Posz Law Group, PLC
SiC semiconductor device having bottom layer and method for manufacturing the same
A SiC semiconductor device includes: a substrate; a drift layer on the substrate; a trench on the drift layer; a base region in the drift layer sandwiching the trench; a channel between the base region and the trench; a source region in the base region sandwiching the trench via the channel; a gate electrode in the trench via a gate insulation film; a source electrode coupled with the source region; a drain electrode on the substrate opposite to the drift layer; and a bottom layer under the trench. An edge portion of the bottom layer under a corner of a bottom of the trench is deeper than a center portion of the bottom layer under a center portion of the bottom of the trench.
DENSO CORPORATION
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inventional inventional inventional additional
Naohiro Nobuyuki Eiichi
Suzuki Kato Okuno