Hauptman Ham, LLP
Method of forming semiconductor structures including metal insulator metal capacitor
A method of making a metal insulator metal (MIM) capacitor includes forming a copper bulk layer in a base layer, wherein the copper bulk layer includes a hillock extending from a top surface thereof. The method further includes depositing an etch stop layer over the base layer and the copper bulk layer. The method further includes depositing an oxide-based dielectric layer over the etch stop layer. The method further includes forming a capacitor over the oxide-based dielectric layer. The method further includes forming a contact extending through the oxide-based dielectric layer and the etch stop layer to contact the copper bulk layer, wherein the forming of the contact removes the hillock.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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inventional inventional inventional
Chien-Ying Ren-Wei Fang-Ting Chun Hua Sheng Yu Chia-Wei
Wu Xiao Kuo Chang Lin Liu