Method for fabricating semiconductor device with strained silicon structure
A method for fabricating a semiconductor device. A gate is formed on a substrate. A spacer is formed on each sidewall of the gate. A hard mask layer is formed on the spacer. A recessed region is formed in the substrate and adjacent to the hard mask layer. An epitaxial layer is formed in the recessed region. The substrate is subjected to an ion implantation process to bombard particle defects on the hard mask layer with inert gas ions. An annealing process is performed to repair damages to the epitaxial layer caused by the ion implantation process. The hard mask layer is then removed.
UNITED MICROELECTRONICS CORP.
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Hsu Chung-Fu Yu-Ren Chun-Wei Kuang-Hsiu Shi-You
Ting Chang Wang Yu Chen Liu