Hauptman Ham, LLP
Semiconductor device including trimmed-gates
A semiconductor device includes: active regions arranged in a first grid oriented substantially parallel to a first direction; and gate electrodes arranged spaced apart in a second grid and overlying corresponding ones of the active regions, the second grid being oriented substantially parallel to a second direction, the second direction being substantially orthogonal to the first direction. The first gaps are interspersed correspondingly between neighboring ones of the active regions. For a flyover intersection at which a corresponding gate electrode crosses over a corresponding active region and for which the gate electrode is not functionally connected to the corresponding active region, the gate electrode does not extend substantially beyond the corresponding active region and so does not extend substantially into a corresponding one of the first gaps.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Wen-Hsi Ling-Sung I-Shan Yu-Jen Chan-yu
Lee Wang Huang Chen Hung