Fish & Richardson P.C.
Semiconductor device including transistor having low parasitic capacitance
A minute transistor is provided. A transistor with small parasitic capacitance is provided. A transistor with high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor and a second insulator embedded in a first insulator, a second conductor and a third conductor. Edges of the second conductor and the third conductor facing each other each has a taper angle of 30 degree or more and 90 degree or less.
Semiconductor Energy Laboratory Co., Ltd.
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Motomu Satoru Shinya Shunpei
Kurata Okamoto Sasagawa Yamazaki