Hauptman Ham, LLP
Method of protecting an interlayer dielectric layer and structure formed thereby
This description relates to a method including forming an interlayer dielectric (ILD) layer and a dummy gate structure over a substrate and forming a cavity in a top portion of the ILD layer. The method further includes forming a protective layer to fill the cavity. The method further includes planarizing the protective layer. A top surface of the planarized protective layer is level with a top surface of the dummy gate structure. This description also relates to a semiconductor device including first and second gate structures and an ILD layer formed on a substrate. The semiconductor device further includes a protective layer formed on the ILD layer, the protective layer having a different etch selectivity than the ILD layer, where a top surface of the protective layer is level with the top surfaces of the first and second gate structures.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
H H
H01L H01L
inventional inventional
Chun-Wei Yu-Lien Yi-An Sey-Ping Neng-Kuo Clement Hsingjen
Chang Huang Lin Sun Chen Wann