McDermott Will & Emery LLP
Semiconductor device and manufacturing method thereof
A semiconductor device including a field effect transistor (FET) device includes a substrate and a channel structure formed of a two-dimensional (2D) material. An interfacial layer is formed on the channel structure. A gate stack including a gate electrode layer and a gate dielectric layer is formed over the interfacial layer. Source and drain contacts are formed over openings in the interfacial layer. The source and drain contacts have a side contact with the interfacial layer and a side contact and a surface contact with the channel structure.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chih-Sheng Ling-Yen Wilman Yu-Ming
Chang Yeh Tsai Lin