McClure, Qualey & Rodack, LLP
Semiconductor device and method for manufacturing the same
A semiconductor device includes at least one n-channel, at least one p-channel, at least one first high-k dielectric sheath, at least one second high-k dielectric sheath, a first metal gate electrode and a second metal gate electrode. The first high-k dielectric sheath surrounds the n-channel. The second high-k dielectric sheath surrounds the p-channel. The first high-k dielectric sheath and the second high-k dielectric sheath comprise different high-k dielectric materials. The first metal gate electrode surrounds the first high-k dielectric sheath. The second metal gate electrode surrounds the second high-k dielectric sheath.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chih-Chieh Tzu-Chiang Cheng-Hsien Chih-Sheng I-Sheng
Yeh Chen Wu Chang Chen