Harness, Dickey & Pierce, P.L.C.
Nanostructure semiconductor light emitting device
A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.
Samsung Electronics Co., Ltd.
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Jung Sub Dae Myung Soo Jeong Byung Kyu Dong Gun Yeon Woo
Kim Chun Choi Chung Lee Seo