Myers Bigel Sibley & Sajovec, PA
Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same
Methods of forming a zirconium hafnium oxide thin layer on a semiconductor substrate by supplying tetrakis(ethylmethylamino)zirconium ([Zr{N(C2H5)(CH3)}4], TEMAZ) and tetrakis(ethylmethylamino)hafnium ([Hf{N(C2H5)(CH3)}4], TEMAH) to a substrate are provided. The TEMAZ and the TEMAH may be reacted with an oxidizing agent. The thin layer including zirconium hafnium oxide may be used for a gate insulation layer in a gate structure, a dielectric layer in a capacitor, or a dielectric layer in a flash memory device.
Samsung Electronics Co., Ltd.
H H H H C H H H H H H H H H
H01L H01L H01L H01L C23C H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional additional inventional additional inventional inventional inventional inventional additional additional inventional additional additional additional
Cha-Young Kyoung-Ryul Han-Mei Dae-Sik Seung-Hwan Young-Sun Sung-Tae Ki-Yeon
Yoo Yoon Choi Choi Lee Kim Kim Park