Williams Morgan, P.C.
On-chip metal-insulator-metal (MIM) capacitor and methods and systems for forming same
We report a semiconductor device, containing a semiconductor substrate; an isolation feature on the substrate; a plurality of gates on the isolation feature, wherein each gate comprises a gate electrode and a high-k dielectric layer disposed between the gate electrode and the isolation feature and disposed on and in contact with at least one side of the gate electrode; and a fill metal between the plurality of gates on the isolation feature. We also report methods of forming such a device, and a system for manufacturing such a device.
GLOBALFOUNDRIES INC.
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Juntao Kangguo Ruilong Chanro
Li Cheng Xie Park