Breiner & Breiner
Method of annealing a semiconductor wafer in a hydrogen atmosphere to desorb surface contaminants
 The present invention provides a method of manufacturing a semiconductor wafer whereby (1) deterioration of a micro-roughness in a low temperature range in hydrogen atmospheric treatment and increase of resistivity due to outward diffusion of an electrically active impurity in a high temperature range are prevented; (2) in the heat treatment in a hydrogen gas atmosphere, the concentration of gas molecules in the atmosphere, such as water, oxygen and the like, are brought to 5 ppm or less in water molecule conversion; and a reaction is suppressed in which a substrate surface is oxidized unequally and the micro-roughness deteriorates; and (3) the same kind of impurity as the electrically active impurity contained in a Si substrate is mixed into the atmosphere and the outward diffusion of the impurity in the vicinity of the Si substrate surface is prevented to prevent variation of the resistivity. 
Sumitomo Sitix Corporation
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Hideshi Naoshi Masakazu Masataka
Nishikawa Adachi Sano Horai