Trop, Pruner & Hu, P.C.
Forming arsenide-based complementary logic on a single substrate
In one embodiment, the present invention includes a method for forming a logic device, including forming an n-type semiconductor device over a silicon (Si) substrate that includes an indium gallium arsenide (InGaAs)-based stack including a first buffer layer, a second buffer layer formed over the first buffer layer, a first device layer formed over the second buffer layer. Further, the method may include forming a p-type semiconductor device over the Si substrate from the InGaAs-based stack and forming an isolation between the n-type semiconductor device and the p-type semiconductor device. Other embodiments are described and claimed.
Intel Corporation
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Suman Jack T. Mantu K. Marko
Datta Kavalieros Hudait Radosavljevic