WPAT, PC
Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device is provided. A substrate having a first area with a first poly layer and a second area with a second poly layer is provided. A nitride HM film is then deposited above the first poly layer of a first device in the first area and above the second poly layer in the second area. Afterwards, a first patterned passivation is formed on the nitride HM film in the first area to cover the nitride HM film and the first device, and a second patterned passivation is formed above the second poly layer in the second area. The second poly layer in the second area is defined by the second patterned passivation.
UNITED MICROELECTRONICS CORP.
H H H H H H
H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional
Chung-Che Jhih-Long Che-Hao Ping-Chia Wei-Pin Yu-Cheng Hsiang-Chen Shao-Nung Jaw-Jiun Wan-Fang
Huang Lin Chang Shih Huang Wang Lee Huang Tu Chung