Haynes and Boone, LLP
Resistance variable memory structure and method of forming the same
A semiconductor structure includes a memory region. A memory structure is disposed on the memory region. The memory structure includes a first electrode, a resistance variable layer, a protection material and a second electrode. The first electrode has a top surface on the memory region. The resistance variable layer has at least a first portion and a second portion. The first portion is disposed over the top surface of the first electrode and the second portion extends upwardly from the first portion. The protection material surrounds the second portion of the resistance variable layer. The protection material is configurable to protect at least one conductive path in the resistance variable layer. The second electrode is disposed over the resistance variable layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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H01L H01L G11C G11C H01L H01L G11C H01L
inventional inventional additional inventional inventional inventional additional inventional
Wen-Ting Hsia-Wei Chin-Chieh Chih-Yang Yu-Wen Kuo-Chi
Chu Chen Yang Chang Liao Tu