Ditthavong & Steiner, P.C.
Dummy gate used as interconnection and method of making the same
Process of using a dummy gate as an interconnection and a method of manufacturing the same are disclosed. Embodiments include forming on a semiconductor substrate dummy gate structures at cell boundaries, each dummy gate structure including a set of sidewall spacers and a cap disposed between the sidewall spacers; removing a first sidewall spacer or at least a portion of a first cap on a first side of a first dummy gate structure and forming a first gate contact trench over the first dummy gate structure; and filling the first gate contact trench with a metal to form a first gate contact.
GLOBALFOUNDRIES INC.
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Wenhui Jason Linus Lei Ryan Ryoung-han Seowoo
Wang Cantone Jang Sun Kim Nam