McDermott Will & Emery LLP
Method of doping impurities, and electronic element using the same
The invention provides a method of doping impurities that includes a step of doping impurities in a solid base substance by using a plasma doping method, a step of forming a light antireflection layer that functions to reduce light reflection on the surface of the solid base substance, and a step of performing annealing by light radiation. According to the method, it is possible to reduce the reflectance of light radiated during annealing, to efficiently apply energy an impurity doped layer, to improve activation efficiency, to prevent diffusion, and to reduce sheet resistance of the impurity doped layer.
Panasonic Corporation
H H
H01L H01L
inventional inventional
Katsumi Yuichiro Ichiro Cheng-Guo Satoshi Bunji Tomohiro Hiroyuki
Okashita Sasaki Nakayama Jin Maeshima Mizuno Okumura Ito