Rothwell, Figg, Ernst & Manbeck, P.C.
Plasma processing apparatus and plasma processing method
A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.
TOKYO ELECTRON LIMITED
C H H C H H
C23C H01J H01J C23C H05H H01J
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Chishio Yohei Kazuki Masashi Jun
Koshimizu Yamazawa Denpoh Saito Yamawaku