Slater Matsil, LLP
Vias with metal caps for underlying conductive lines
A semiconductor device includes a first dielectric layer over a substrate, the first dielectric layer including a first dielectric material extending from a first side of the first dielectric layer distal from the substrate to a second side of the first dielectric layer opposing the first side; a second dielectric layer over the first dielectric layer; a conductive line in the first dielectric layer, the conductive line including a first conductive material, an upper surface of the conductive line being closer to the substrate than an upper surface of the first dielectric layer; a metal cap in the first dielectric layer, the metal cap being over and physically connected to the conductive line, the metal cap including a second conductive material different from the first conductive material; and a via in the second dielectric layer and physically connected to the metal cap, the via including the second conductive material.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional inventional additional additional inventional inventional inventional inventional additional inventional additional additional additional additional additional additional inventional additional additional additional additional inventional additional additional additional additional additional additional additional additional additional inventional additional additional additional inventional inventional inventional inventional additional additional additional additional additional inventional additional additional
William Weilun Chi-Jen Yi-Sheng Yang-Chun Chia-Wei Chun-Wei Liang-Guang Kei-Wei Chi-Hsiang
Hong Liu Lin Cheng Ho Hsu Chen Chen Shen