Lowe Hauptman Ham & Berner, LLP
Integrated circuit including FINFETs and methods for forming the same
An integrated circuit including a plurality of Fin field effect transistors (FINFETs) is provided. The integrated circuit includes a plurality of fin-channel bodies over a substrate. The fin-channel bodies include a first fin-channel body and a second fin-channel body. A gate structure is disposed over the fin-channel bodies. At least one first source/drain (S/D) region of a first FINFET is adjacent the first fin-channel body. At least one second source/drain (S/D) region of a second FINFET is adjacent the second fin-channel body. The at least one first S/D region is electrically coupled with the at least one second S/D region. The at least one first and second S/D regions are substantially free from including any fin structure.
Taiwan Semiconductor Manufacturing Company, Ltd.
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H01L H01L H01L H01L
inventional inventional inventional inventional
Chang-Yun Shao-Ming Hung-Ming
Chang Yu Chen