Oliff & Berridge, PLC
Insulating film of semiconductor device and coating solution for forming insulating film and method of manufacturing insulating film
It is an object to provide an insulating film which enables not only to obtain a good film quality but to achieve an excellent filling property, thick film formation and planarization simultaneously, and to provide an insulating film forming coating solution for forming the insulating film, and to provide a method of manufacturing the insulating film.An insulating film forming coating solution containing as a main component a solution of a polymer obtained by co-hydrolysis of trialkoxysilane expressed by a general formula, SiH(OR)3, methyltrialkoxysilane expressed by a general formula, SiCH3(OR)3, and tetraalkoxysilane expressed by a general formula, Si(OR)4 is coated on a semiconductor substrate (1) having a step portion, and after it is heated and dried in an inert gas atmosphere, an insulating film (6) which is composed of a silane-derived compound expressed by a general formula, SiHx(CH3)yO2&#8722;(x+y)/2, where, 0<x<1, 0<y<1, x+y&lE;1 is formed.
Kawasaki Steel Corporation
H C H H H
H01L C09D H01L H01L H01L
inventional inventional inventional inventional inventional
Kyoji Tadashi
Tokunaga Nakano