Photolithographic pattern-forming material and method for formation of fine pattern therwith
Disclosed is a photolithographic pattern-forming material capable of giving a fine patterned resist layer rapidly and being used repeatedly. The pattern-forming material is a multilayered body comprising a substrate and a photoresist layer thereon which is overlaid with a three-layered composite film for near-field light generation consisting of an intermediate layer of a non-linear optical material such as antimony sandwiched between two dielectric layers. When irradiated with active rays focused on the optically nonlinear layer, a fine optical window or light scattering point is formed therein where a near-field light is generated to pattern-wise expose the photoresist layer.
Agency of Industrial Science and Technology
G G
G03F G03F
additional inventional
Masashi Junji Takashi Nobufumi
Kuwahara Tominaga Nakano Atoda