Christensen O'Connor Johnson Kindness PLLC
Source follower device for enhanced image sensor performance
An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a floating diffusion disposed in the semiconductor material proximate to the photodiode. A transfer transistor is coupled to the photodiode to transfer the image charge from the photodiode into the floating diffusion in response to a transfer signal applied to a transfer gate of the transfer transistor. A source follower transistor is coupled to the floating diffusion to amplify a charge on the floating diffusion. The source follower transistor includes a gate electrode including a semiconductor material having a first dopant type; a source electrode, having a second dopant type, disposed in the semiconductor material; a drain electrode, having the second dopant type, disposed in the semiconductor material; and a channel, having the second dopant type, disposed between the source electrode and the drain electrode.
OmniVision Technologies, Inc.
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Lindsay Kazufumi Chih-Wei Young Woo Dyson
Grant Watanabe Hsiung Jung Tai