Method for fabricating semiconductor MOS device
A method of making a transistor device having silicided source/drain is provided. A gate electrode is formed on a substrate with a gate dielectric layer therebetween. A spacer is formed on sidewalls of the gate electrode. A source/drain is implanted into the substrate. A pre-amorphization implant (PAI) is performed to form an amorphized layer on the source/drain. A post-PAI annealing process is performed to repair defects formed during the PAI process. A metal silicide layer is then formed from the amorphized layer.
United Microelectronics Corp.
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Yi-Wei Chao-Ching Tzung-Yu Yu-Lan Chun-Chieh
Chen Hsieh Hung Chang Chang