Slater Matsil, LLP
STI shape near fin bottom of Si fin in bulk FinFET
A method of forming an integrated circuit structure includes providing a semiconductor substrate including a top surface; forming a first insulation region and a second insulation region in the semiconductor substrate; and recessing the first insulation region and the second insulation region. Top surfaces of remaining portions of the first insulation region and the second insulation region are flat surfaces or divot surfaces. A portion of the semiconductor substrate between and adjoining removed portions of the first insulation region and the second insulation region forms a fin.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Feng Chang-Yun Tsung-Lin Hung-Ming
Yuan Chang Lee Chen