Bucknam and Archer
Technique to grow high quality ZnSe epitaxy layer on Si substrate
A technique to grow high quality and large area ZnSe layer on Si substrate is provided, comprising growing GexSi1−x/Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and finally growing a ZnSe film on top Ge buffer layers.Two concepts are applied in the process of this invention, the first one is to block the dislocations generated from GexSi1−x epitaxial layers and to terminate the propagated upward dislocations by using strained interfaces, accordingly the dislocation density of ZnSe layer is greatly reduced and the surface roughness is improved; the second concept is to solve the problems of anti-phase domain due to growth of polar materials on non-polar material using off-cut angle Si substrate, and that is free from diffusion problems between different atoms while generally growing ZnSe layers on Si substrate.
Witty Mate Corporation
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Tsung-Yeh Tsung-Hsi Chun-Yen Guangli Chung-Liang Wu-Ching Chu-Shou
Yang Yang Chang Luo Lee Chou Yang