Method of fabricating metal oxide semiconductor transistor
A method of fabricating a MOS transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming at least a gate on the semiconductor substrate; forming a protective layer on the semiconductor substrate, and the protective layer covering the surface of the gate; forming at least a recess within the semiconductor substrate adjacent to the gate; forming an epitaxial layer in the recess, wherein the top surface of the epitaxial layer is above the surface of the semiconductor substrate; and forming a spacer on the sidewall of the gate and on a portion of the epitaxial layer, wherein a contact surface of the epitaxial layer and the spacer is above the surface of the semiconductor substrate.
United Microelectronics Corp.
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Shih-Chieh Po-Lun Chih-Chiang Chu-Yin Shyh-Fann Hsuan-Hsu
Hsu Cheng Wu Tseng Ting Chen