Williams Morgan, P.C.
Overlay performance for a fin field effect transistor device
Approaches for improving overlay performance for an integrated circuit (IC) device are provided. Specifically, the IC device (e.g., a fin field effect transistor (FinFET)) is provided with an oxide layer and a pad layer formed over a substrate, wherein the oxide layer comprises an alignment and overlay mark, an oxide deposited in a set of openings formed through the pad layer and into the substrate, a mandrel layer deposited over the oxide material and the pad layer, and a set of fins patterned in the IC device without etching the alignment and overlay mark. With this approach, the alignment and overlay mark is provided with the fin cut (FC) layer and, therefore, avoids finification.
GLOBALFOUNDRIES INC.
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Daniel Qi Hongliang Zhenyu Andy Sruthi Richard J.
Pham Zhang Shen Hu Wei Muralidharan Carter