Hoffman Warnick LLC
FinFET device comprising a single diffusion break with an upper surface that is substantially coplanar with an upper surface of a fin
A finFET device is disclosed including a fin defined in a semiconductor substrate, the fin having an upper surface and a first diffusion break positioned in the fin, wherein the first diffusion break comprises an upper surface that is substantially coplanar with the upper surface of the fin.
GlobalFoundries U.S. Inc.
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inventional inventional inventional inventional
Jiehui Hong Hui Jinping
Shu Yu Zang Liu