Cantor Colburn LLP
Transistor with airgap spacer
A semiconductor device includes a gate having a gate spacer formed on a semiconductor substrate and a source or drain (S/D) formed on the substrate a distance away from the gate. A S/D contact including a contact spacer is formed on an upper surface of the S/D. A dielectric layer is interposed between the gate spacer and the contact spacer; and an airgap is in the dielectric layer.
INTERNATIONAL BUSINESS MACHINES CORPORATION
H H H H H H H
H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional
Juntao Ruilong Kangguo Chanro
Li Xie Cheng Park