Lowe Hauptman Ham & Berner LLP
Field effect transistor and method of fabricating the same
Provided are a field effect transistor and a method of fabricating the same, wherein the field effect transistor is formed which has a hyperfine channel length by employing a technique for forming a sidewall spacer and adjusting the deposition thickness of a thin film. In the field effect transistor of the present invention, a source junction and a drain junction are thin, and the overlap between the source and the gate and between the drain and the gate is prevented, thereby lowering parasitic resistance. Further, the gate electric field is easily introduced to the drain extending region, so that the carrier concentration is effectively controlled in the channel at the drain. Also, the drain extending region is formed to be thinner than the source, so that the short channel characteristic is excellent.
Electronics and Telecommunications Research Institute
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Ki-ju In-bok Won-ju Jong-heon Seong-jae Chang-geun
Im Baek Cho Yang Lee Ahn