Westerman, Hattori, Daniels & Adrian, LLP
Resist composition and patterning process
A hydroxystyrene/indene/alkoxyisobutoxystyrene copolymer having Mw of 1,000-500,000 is formulated as a base resin to give a resist composition, typically chemically amplified positive resist composition. The composition exhibits a high resolution, a satisfactory resist pattern profile after development, and improved etch resistance and is thus suitable as a micropatterning material for the fabrication of VLSI.
Shin-Etsu Chemical Co., Ltd.
Y G G G Y
Y10S G03F G03F G03F Y10S
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Osamu Tsugio Daisuke Takanobu
Watanabe Kaneda Manba Takeda