Schwabe, Williamson & Wyatt, P.C.
Techniques for integrating three-dimensional islands for radio frequency (RF) circuits
Techniques to fabricate an RF filter using 3 dimensional island integration are described. A donor wafer assembly may have a substrate with a first and second side. A first side of a resonator layer, which may include a plurality of resonator circuits, may be coupled to the first side of the substrate. A weak adhesive layer may be coupled to the second side of the resonator layer, followed by a low-temperature oxide layer and a carrier wafer. A cavity in the first side of the resonator layer may expose an electrode of the first resonator circuit. An RF assembly may have an RF wafer having a first and a second side, where the first side may have an oxide mesa coupled to an oxide layer. A first resonator circuit may be then coupled to the oxide mesa of the first side of the RF wafer.
Intel Corporation
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Gregory Marko Bruce A. Sansaptak Han Wui Nebil Paul B.
Chance Radosavljevic Block Dasgupta Then Tanzi Fischer