Foley & Lardner
Method and apparatus for controlling rise and fall of temperature in semiconductor substrates
A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program. Also is provided a susceptor to reduce contamination of the semiconductor substrate with the metal impurities containing gas flow at the time of forming a thin film on the semiconductor substrate, and a gas phase thin film growth apparatus using such susceptor. The susceptor is formed with a gas flow deflector jutting downwardly from the peripheral portion of the reverse side of the susceptor to deflect the gas flow moving upon rotation along the reverse side of the susceptor from the center thereof to the peripheral portion thereof.
Toshiba Ceramics Co., Ltd. Toshiba Kikai Kabushiki Kaisha
C C C C C C C C
C30B C23C C30B C30B C23C C23C C30B C23C
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Hiroyuki Tadashi Hidenori Hideki Shyuji Katsuyuki Kunihiko Hirofumi Shinichi Yoshitaka Hideki Takaaki
Saito Ohashi Takahashi Ito Tobashi Iwata Suzuki Katsumata Mitani Murofushi Arai Honda