Scully, Scott, Murphy & Presser, P.C.
Composite high-k gate dielectric stack for reducing gate leakage
A composite high dielectric constant (high-k) gate dielectric includes a stack of a doped high-k gate dielectric and an undoped high-k gate dielectric. The doped high-k gate dielectric can be formed by providing a stack of a first high-k dielectric material layer and a dopant metal layer and annealing the stack to induce the diffusion of the dopant metal into the first high-k dielectric material layer. The undoped high-k gate dielectric is formed by subsequently depositing a second high-k dielectric material layer. The composite high-k gate dielectric can provide an increased gate-leakage oxide thickness without increasing inversion oxide thickness.
International Business Machines Corporation
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Jinping Michael P. Min Joseph F. MaryJane Yanfeng Shahab
Liu Chudzik Dai Shepard, Jr. Brodsky Wang Siddiqui