Knobbe Martens Olson & Bear, LLP
CMOSFET device with controlled threshold voltage characteristics and method of fabricating the same
There is provided a CMOSFET device with threshold voltage controlled by means of interface dipoles and a method of fabricating the same. A cap layer, for example a very thin layer of poly-silicon, amorphous silicon, or SiO2, is interposed inside high-k gate dielectric layers of the CMOSFET device, and the threshold voltage is adjusted by means of the interface dipoles formed by the cap layer inside the high-k gate dielectric layers. According to the present invention, it is possible to effectively optimize the threshold voltage of the CMOSFET device without significantly increasing EOT thereof.
Institute of Microelectronics, Chinese Academy of Sciences
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Wenwu Dapeng Huilong Shijie
Wang Chen Zhu Chen