Haynes and Boone, LLP
System and method of forming a split-gate flash memory structure including partial circular sidewalls of the floating gates and control gates
A method for forming a split-gate flash memory structure includes etching a first gate layer to form one or more floating gates and forming an isolation layer over the floating gates. An insulation layer is deposited over the isolation layer and planarized.
Taiwan Semiconductor Manufacturing Company, Ltd.
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H01L H01L H01L
inventional inventional inventional
Jiun Nan Shieh Feng Lien Yo
Chen Huang Tsai