Myers Bigel Sibley & Sajovec, PA
Methods of forming storage capacitors for semiconductor devices
Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening therethrough on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.
Samsung Electronics Co., Ltd.
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Rak-Hwan Hyun-Suk Hyun-Young Hyeon-Deok In-Sun Sung-Tae Jung-Hee Young-Joo Hyun-Seok
Kim Lee Kim Lee Park Kim Chung Cho Lim