Anova Law Group, PLLC
Semiconductor devices
A semiconductor device includes a base substrate; a plurality of doped regions formed in the base substrate; and a target capping layer formed on surfaces of the doped regions. The target capping layer includes a silicide region and a non-silicide region surrounding the silicide region, and the silicide region has a reduced thickness compared with a thickness of the non-silicide region. The semiconductor device further includes a metal silicide layer formed in the silicide region of the target capping layer and having the reduced thickness; a dielectric layer formed on the target capping layer and the base substrate; and a plurality of vias formed in the dielectric layer and connected to the metal silicide layer.
Semiconductor Manufacturing International (Beijing) Corporation Semiconductor Manufacturing International (Shanghai) Corporation
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Yong
Li