Cantor Colburn LLP
Buffer regions for blocking unwanted diffusion in nanosheet transistors
Embodiments of the invention are directed to a method of fabricating a semiconductor device. A non-limiting example of the method includes performing fabrication operations to form a nanosheet field effect transistor device. The fabrication operations include forming a sacrificial nanosheet and a channel nanosheet over a substrate, forming a diffusion barrier layer between the sacrificial nanosheet and the channel nanosheet, wherein a diffusion coefficient of the diffusion barrier layer is selected to substantially prevent a predetermined semiconductor material from diffusing through the diffusion barrier layer.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Zhenxing Juntao Kangguo Peng
Bi Li Cheng Xu