Young & Thompson
Method of simulating a profile of sputter deposition which covers a contact hole formed on a semiconductor wafer
 In order to simulate, using a computer, a profile of sputter deposition on a contact hole formed on a semiconductor wafer, a plurality of trajectories of particles emitted from a sputter target are calculated. One of the trajectories is directed to a first coordinate point which is included in the profile of sputter deposition and with which an amount of sputter deposition is calculated. Thereafter, a plurality of shadow judgment planes are successively defined with respect to all coordinate points, after which a check is made to determine if the above mentioned one of the plurality of trajectories crosses each of said plurality of shadow judgment planes. 
NEC Corporation
G
G06F
inventional
Hiroaki Toshiyuki
Yamada Ohta