Schwabe, Williamson & Wyatt, P.C.
Group III-N transistors for system on chip (SOC) architecture integrating power management and radio frequency circuits
System on Chip (SoC) solutions integrating an RFIC with a PMIC using a transistor technology based on group III-nitrides (III-N) that is capable of achieving high Ft and also sufficiently high breakdown voltage (BV) to implement high voltage and/or high power circuits. In embodiments, the III-N transistor architecture is amenable to scaling to sustain a trajectory of performance improvements over many successive device generations. In embodiments, the III-N transistor architecture is amenable to monolithic integration with group IV transistor architectures, such as planar and non-planar silicon CMOS transistor technologies. Planar and non-planar HEMT embodiments having one or more of recessed gates, symmetrical source and drain, regrown source/drains are formed with a replacement gate technique permitting enhancement mode operation and good gate passivation.
Intel Corporation
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Niloy Marko Jack Gilbert Han Wui Robert Ravi Valluri
Mukherjee Radosavljevic Kavalieros Dewey Then Chau Pillarisetty Rao