Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Apparatus and method of improving an insulating film on a semiconductor device
 A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, and an electrode formed on the first insulating film. The first insulating film contains a halogen element and a combination of silicon and nitrogen or a combination of silicon, oxygen, and nitrogen. The maximum concentration of the halogen element in the first insulating film ranges from 10.sup.20 atoms/cm.sup.3 to 10.sup.21 atoms/cm.sup.3 inclusive. With this structure, the dielectric breakdown strength and the like of the insulating film increase, and the reliability of the insulating film improves. 
Kabushiki Kaisha Toshiba
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Yuichiro Hideki Akira
Mitani Satake Toriumi