Myers Bigel, P.A.
Three-dimensional semiconductor memory devices
Disclosed is a semiconductor memory device including stacks on a substrate, a vertical channel portion connected to the substrate through each of the stacks, and a separation pattern disposed between the stacks. Each of the stacks may include a plurality of gate electrodes stacked on the substrate and insulating patterns interposed between the gate electrodes. Each of the gate electrodes may include a first metal pattern, which is disposed between the insulating patterns to define a recess region recessed toward the vertical channel portion, and a second metal pattern disposed in the recess region. The first and second metal patterns may contain the same metallic material and may have mean grain sizes different from each other.
Samsung Electronics Co., Ltd.
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Jooyeon Jeonggil Joyoung Hauk Kihyun Jinwoo Hyunseok Seok-Won
Ha Lee Park Han Yoon Park Lim Lee