Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Field effect transistor and manufacturing method thereof
 In the manufacturing process of a field effect transistor, the main surface of the semiconductor layer is exposed to the atmosphere containing oxygen atoms and nitrogen atoms at first. Then, the gate insulating film is formed by introducing heavy hydrogen atoms therein such that the concentration of heavy hydrogen atoms in the interface of a gate insulating film and the gate electrode is higher than that of a middle portion of the gate insulating film located in the middle of the gate insulating film in the direction of the thickness of the gate insulating film. Subsequently, the gate electrode is formed on the gate insulating film. Then, source and drain regions are formed on the main surface of the semiconductor layer to sandwich the gate electrode therebetween. By virtue of the above-mentioned method, a gate insulating film having a small thickness and high electric stability can be obtained. 
Kabushiki Kaisha Toshiba
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inventional inventional inventional inventional
Akira Hideki
Toriumi Satake