Eschweiler & Associates, LLC
RRAM cell structure with laterally offset BEVA/TEVA
The present disclosure relates to a method of forming a resistive random access memory (RRAM) cell. The method forms a bottom electrode over a bottom electrode via. The method further forms a variable resistive dielectric layer over the bottom electrode, and a top electrode over the variable resistive dielectric layer. The method forms a top electrode via vertically extending outward from an upper surface of the top electrode at a position centered along a first axis that is laterally offset from a second axis centered upon the bottom electrode via. The top electrode via has a smaller width than the top electrode. Laterally offsetting the top electrode via from the bottom electrode via provides the top electrode via with good contact resistance.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chih-Yang Sheng-Hung Wen-Chun Chin-Chieh Kuo-Chi Wen-Ting Hsia-Wei Yu-Wen
Chang Shih You Yang Tu Chu Chen Liao