Amin, Turocy & Watson, LLP
Field-effect transistors with semiconducting gate
Field-effect transistors (FETs) are described that comprise a semiconducting gate (SG) layer, referred to herein as SG-FETs. In one or more embodiments, the FETs can include a channel layer and a SG layer capacitively coupled to the channel layer. The SG layer has an embedded voltage-clamping function that provides internal gate over voltage protection without an additional protection circuit. The embedded voltage-clamping function is based on the SG layer having a maximum effective gate voltage that is clamped to the depletion threshold of the SG layer.
THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
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Jing Qingkai
Chen Qian