Method to form self-aligned contacts with polysilicon plugs
 An improved method to form self-aligned contacts with polysilicon plugs is described. A semiconductor substrate is provided. A silicon oxide layer overlying the semiconductor substrate is deposited. A contact hole is etched through the silicon oxide layer to the surface of the semiconductor substrate. A polysilicon layer is deposited overlying the silicon oxide layer and filling completely the contact hole. The polysilicon layer is polished away to define only polysilicon remaining in the contact hole and to remove the silicon oxide layer sufficient to flatten the top surface of the silicon oxide layer. The fabrication of the integrated circuit device is completed. 
Taiwan Semiconductor Manufacturing Company
H H
H01L H01L
inventional inventional
Jin-Yuan Cheng-Yeh Chung-Long
Lee Shih Chang