J.C. Patents
Method for fabricating charge-trapping memory
A manufacturing method of a charge-trapping memory device is provided. This method includes forming a stacked structure having at least a charge-trapping medium. An annealing process in a hydrogen gas is then performed on the stacked structure subsequent to the device fabrication process. The annealing process is conducted at a temperature of about 350° C. to 450° C. and with the concentration of the hydrogen gas greater than 0.5 mole percent.
MACRONIX International Co., Ltd.
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inventional inventional inventional
Jenn-Gwo Jung-Yu Yi-Lin Yen-Hao Chia-Hua
Hwu Hsieh Yang Shih Chang