J.C. Patents
Manufacturing method of semiconductor device
A manufacturing method of a semiconductor device including the following steps is provided. A substrate having a device structure and a first interconnection structure on a front side is provided. A first annealing process is performed in an atmosphere of pure hydrogen at a first temperature. A second interconnection structure is formed on a back side of the substrate. A second annealing process is performed in an atmosphere of gas mixture including hydrogen at a second temperature.
UNITED MICROELECTRONICS CORP.
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Wen-Bo Chien-Kee Li-Da Wen-Shen Sheng Chee-Hau Wei-Hui Xiaoyuan
Ding Pang Huang Li Zhang Ng Gao Zhi