Oblon, McClelland, Maier & Neustadt, L.L.P.
Semiconductor memory device and method for manufacturing the same
A semiconductor memory device according to the embodiment includes a substrate, electrodes, at least one pillar structure, at least one charge storage film, and at least one insulating member. The electrodes are provided on the substrate, are separately stacked each other, and constitute a stacked body. The electrodes have a first width in a first direction along a surface of the substrate and include a portion extending in a second direction crossing the first direction along the surface. The pillar structure is provided in the stacked body and includes a semiconductor layer extending in a stacking direction of the stacked body. The charge storage film is provided between the semiconductor layer and the electrodes. The insulating member has a width in the first direction smaller than the first width, pierces the electrodes, and is provided to extend in the stacking direction.
TOSHIBA MEMORY CORPORATION
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inventional inventional additional
Osamu Hideki Masanari
Matsuura Inokuma Fujita