Blakely Sokoloff Taylor & Zafman
Metal gate electrodes for replacement gate integration scheme
Metal gate electrodes for a replacement gate integration scheme are described. A semiconductor device includes a substrate having a dielectric layer disposed thereon. A trench is disposed in the dielectric layer. A gate dielectric layer is disposed at the bottom of the trench and above the substrate. A gate electrode has a work-function-setting layer disposed along the sidewalls of the trench and above the gate dielectric layer at the bottom of the trench. The work-function-setting layer has a thickness at the bottom of the trench greater than the thickness along the sidewalls of the trench. A pair of source and drain regions is disposed in the substrate, on either side of the gate electrode.
Applied Materials, Inc.
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Bingxi Sun Chorng-Ping
Wood Chang