Osha Liang LLP
Physical vapor deposition of an aluminum nitride film
A method for physical vapor deposition of an aluminum nitride film, comprising: positioning a substrate and an aluminum target in a chamber; vacuuming the chamber so that a chamber pressure is at a base pressure between 7.1×10−7-5×10−6 torr; conducting a working gas composed of argon gas and nitrogen gas into the chamber so that the chamber pressure is at a working pressure between 3-7 mtorr; and depositing the aluminum nitride film on the substrate by applying a high power impulse power supply to the aluminum target and applying a direct current bias power supply to the substrate under the working pressure and a substrate temperature between room temperature (25° C.) to 200° C.; wherein a power of the high power impulse power supply is between 500-600 W and a frequency thereof is between 750-1250 Hz, and a bias of the direct current bias power supply is between −50-0 V.
Ming Chi University of Technology
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Yung-Chin Chen-Te Jyh-Wei
Yang Chang Lee