Lowe Hauptman Ham & Berner, LLP
Method for manufacturing code address memory cell by which a stack insulating film of an oxide film and a nitride film used as a dielectric film in a flash memory is used as a gate oxide film
The present invention relates to a method manufacturing a code address memory (CAM) cell. The present invention uses a dielectric film in which an oxide film and a nitride film between a floating gate and a control gate in a flash memory cell are stacked as a gate insulating film between a semiconductor substrate and a gate in the CAM cell. Therefore, the present invention can reduce the area of a peripheral circuit region and stably secure repaired data since the CAM cell can be stably driven at a low operating voltage and additional boosting circuit is thus not required.
Hynix Semiconductor Inc.
H H
H01L H01L
inventional inventional
Jum Soo Sung Mun Min Kuck Young Bok
Kim Jung Cho Lee