Anova Law Group, PLLC
Semiconductor device and fabrication method thereof
Semiconductor device and fabrication method are provided. The method includes: providing a base substrate; forming gate structures on the base substrate; forming source/drain doped regions in the base substrate on sides of each gate structure, where the source/drain doped regions have recessed top surfaces and are doped with source/drain ions; and doping into the recessed top surfaces of the source/drain doped regions with contact ions to form contact doped regions in top portions of the source/drain doped regions, where the contact ions have a conductivity type same as the source/drain ions.
Semiconductor Manufacturing International (Shanghai) Corporation Semiconductor Manufacturing International (Beijing) Corporation
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Yong
Li