Van Pelt, Yi & James LLP
Resistive memory device implementing selective memory cell refresh
A resistive memory device implements a selective refresh operation in which only memory cells with reduced sense margin are refreshed. In some embodiments, the selective refresh operation introduces a sense margin guardband so that a memory cell having programmed resistance that falls within the sense margin guardband will be refreshed during the read operation. The selective refresh operation is performed transparently at each read cycle of the memory cells and only memory cells with reduced sense margins are refreshed.
Integrated Silicon Solution, Inc.
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Seong Jun Justin Geun-Young
Jang Kim Park