McClure, Qualey & Rodack, LLP
Semiconductor device structure and method for forming the same
A method for forming a semiconductor device structure is provided. The method includes forming a first source/drain structure and a second source/drain structure in a substrate. The method includes forming a first dielectric layer over the first source/drain structure, the second source/drain structure, and the substrate. The method includes forming a gate electrode in the first trench. The method includes removing the first dielectric layer. The method includes forming a first conductive strip structure over the first source/drain structure and the substrate. The method includes partially removing the first conductive strip structure to form a second trench in the first conductive strip structure. The method includes forming a second dielectric layer in the second trench.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Jia-Chuan Chia-Hao Lin-Yu Yu-Ming Tien-Lu Sheng-Tsung Chih-Hao
You Chang Huang Lin Lin Wang Wang