Tutunjian & Bitetto, P.C.
Long-channel fin field effect transistors
A method of forming a long-channel fin field effect device is provided. The method includes forming a trench in a substrate, forming a pedestal in the trench, wherein the pedestal extends above the surface of the substrate, forming a sacrificial pillar on the pedestal, forming a rounded top surface on the sacrificial pillar to form a sacrificial support structure, forming a fin material layer on the exposed surface of the sacrificial support structure, and removing the sacrificial support structure to leave a free-standing inverted U-shaped fin.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Kangguo Zhenxing Peng Juntao
Cheng Bi Xu Li