Myers Bigel & Sibley, P.A.
Integrated circuit devices including stress proximity effects and methods of fabricating the same
An integrated circuit can include first and second FETs of a particular conductivity type on a substrate, wherein a first source/drain region of the first FET is closer to a center of a first channel region of the first FET than a second source/drain region of the second FET is to a center of a second channel region of the second FET.
Samsung Electronics Co., Ltd.
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Myung-Gil Chang-Woo Young-Chai
Kang Oh Jung