Fabrication of gallium arsenide MOS devices
 A method of fabricating gallium arsenide MOS devices with improved stoichiometric and electrical properties is disclosed. The device includes a gallium arsenide substrate overlaid with a native oxide and an aluminum oxide layer. The device is fabricated using a plasma oxidizing process. 
Bell Telephone Laboratories, Incorporated
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Tan T. James J. Chuan C. Robert P. H.
Sheng Coleman Chang Chang