Joseph Bach Michaelson and Wallace
Etch method using a dielectric etch chamber with expanded process window
A method for etching a dielectric in a thermally controlled plasma etch chamber with an expanded processing window. The method is adapted to incorporate benefits of a the thermal control and high evacuation capability of the chamber. Etchent gases include hydrocarbons, oxygen and inert gas. Explanation is provided for enablling the use of hexafluoro-1,3-butadiene in a capacitively coupled etch plasma. The method is very useful for creating via, self aligned contacts, dual damascene, and other dielectric etch.
Applied Materials, Inc.
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Kenny L Claes Jingbao Takehiko Ruiping Hongching Yunsang Bryan Y Judy Melody
Doan Bjorkman Liu Komatsu Wang Shan Kim Pu Wang Chang