Oblon, McClelland, Maier & Neustadt, L.L.P.
Plasma processing apparatus and method
A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part.
TOKYO ELECTRON LIMITED
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Kazuo Yohei Noriyuki Hiroki Akira Yoshinobu Chishio Ryuji Naoki Manabu Daisuke Manabu Hidetoshi Masashi Masaru Kunihiko Toshihiro
Kibi Yamazawa Kobayashi Yamazaki Koshiishi Ohya Koshimizu Ohtani Matsumoto Sato Yano Iwata Hanaoka Saito Sugimoto Hinata Hayami