Manufacture method of LTPS thin film transistor and LTPS thin film transistor
The present invention provides a manufacture method of a LTPS thin film transistor and a LTPS thin film transistor. The gate isolation layer is first etched to form the recess, and then the gate is formed on the recess so that the width of the gate is slightly larger than the width of the recess. Then, the active layer is implemented with ion implantation to form the source contact region, the drain contact region, the channel region and one transition region at least located between the drain contact region and the channel region. The gate isolation layer above the transition region is thicker than the channel region and can shield a part of the gate electrical field to make the carrier density here lower than the channel region to form a transition.
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
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Xiaoxing Xingyu
Zhang Zhou