McDermott Will & Emery LLP
Semiconductor device with fin end spacer dummy gate and method of manufacturing the same
A semiconductor device includes a plurality of fins on a substrate. A fin liner is formed on an end surface of each of the plurality of fins. An insulating layer is formed on the plurality of fins. A plurality of polycrystalline silicon layers are formed on the insulating layer. A source/drain epitaxial layer is formed in a source/drain space in each of the plurality of fins. One of the polycrystalline silicon layers is formed on a region spaced-apart from the fins.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional
Tzu-Chiang Ming-Shiang Tzu-Chung Kai-Tai Chia-Cheng Tung Ying Wei-Sheng
Chen Lin Wang Chang Ho Lee Yun