Tutunjian & Bitetto, P.C.
Integrated strained stacked nanosheet FET
Transistors and methods of forming the same include forming a fin of alternating layers of a channel material and a sacrificial material. Stress liners are formed in contact with both ends of the fin. The stress liners exert a stress on the fin. The sacrificial material is etched away from the fin, such that the layers of the channel material are suspended between the stress liners. A gate stack is formed over and around the suspended layers of channel material.
International Business Machines Corporation
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Kangguo Ramachandra Xin Juntao
Cheng Divakaruni Miao Li