Mills & Onello LLP
Semiconductor device having carbon-containing metal silicide layer and method of fabricating the same
Methods of fabricating semiconductor devices having a carbon-containing metal silicide layer and semiconductor devices fabricated by the methods are provided. A representative method includes the steps of preparing a semiconductor substrate and forming a gate electrode and source/drain regions on the semiconductor substrate, such that the gate electrode has a first metal silicide layer on an upper part thereof which contains carbon and the source/drain regions have second metal silicide layers on their substantially carbon-free upper parts.
Samsung Electronics Co., Ltd.
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Hion-suck Ho Dong-suk Seung-hwan Tetsuji Hwa-sung
Baik Lee Shin Lee Ueno Rhee