Schwabe, Williamson & Wyatt, P.C.
Transistor connected diodes and connected III-N devices and their methods of fabrication
Transistor connected diode structures are described. In an example, the transistor connected diode structure includes a group III-N semiconductor material disposed on substrate. A raised source structure and a raised drain structure are disposed on the group III-N semiconductor material. A mobility enhancement layer is disposed on the group III-N semiconductor material. A polarization charge inducing layer is disposed on the mobility enhancement layer, the polarization charge inducing layer having a first portion and a second portion separated by a gap. A gate dielectric layer disposed on the mobility enhancement layer in the gap. A first metal electrode having a first portion disposed on the raised drain structure, a second portion disposed above the second portion of the polarization charge inducing layer and a third portion disposed on the gate dielectric layer in the gap. A second metal electrode disposed on the raised source structure.
Intel Corporation
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Marko Han Wui Sansaptak
Radosavljevic Then Dasgupta