Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Nonvolatile semiconductor memory device
A memory cell includes a floating gate electrode, a first inter-electrode insulating film and a control gate electrode. A peripheral transistor includes a lower electrode, a second inter-electrode insulating film and an upper electrode. The lower electrode and the upper electrode are electrically connected via an opening provided on the second inter-electrode insulating film. The first and second inter-electrode insulating films include a high-permittivity material, the first inter-electrode insulating film has a first structure, and the second inter-electrode insulating film has a second structure different from the first structure.
Kabushiki Kaisha Toshiba
H H H H
H01L H01L H01L H01L
inventional inventional inventional inventional
Tadashi Shoichi Mitsuhiro Kenji
Iguchi Watanabe Noguchi Gomikawa