Semiconductor device for avoiding short circuit between adjacent storage nodes and manufacturing method thereof
A semiconductor device and a manufacturing method thereof are provided. The method includes providing a substrate, a plurality of word lines and a plurality of bit lines, and then forming a storage node contact on each source/drain region, so that a width of a top surface of each storage node contact in a direction is less than a width of a bottom surface of each storage node contact.
UNITED MICROELECTRONICS CORP. Fujian Jinhua Integrated Circuit Co., Ltd.
H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional additional inventional
Chien-Ting Tzu-Tsen Li-Wei
Ho Liu Feng