Haynes and Boone, LLP
CMOS image sensor with epitaxial passivation layer
The present disclosure provides a complimentary metal-oxide-semiconductor (CMOS) image sensor (CIS) device. In accordance with some embodiments, the device includes a semiconductor region having a front surface and a back surface; a light-sensing region extending from the front surface towards the back surface within the semiconductor region; a gate stack formed over the semiconductor region; and at least one epitaxial passivation layer disposed at least one of over and below the light-sensing region. In some embodiments, the at least one epitaxial passivation layer includes a p-type doped silicon (Si) layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Shyh-Fann Ru-Liang Yu-Hung Tung-Hsiung Tung-I Chia-Shiung Jhy-Jyi Cheng-Ta Yeur-Luen Wei-Li
Ting Lee Cheng Tseng Lin Tsai Sze Wu Tu Chen