Seyfarth Shaw LLP
High power compound semiconductor field effect transistor devices with low doped drain
A compound semiconductor field effect transistor may include a channel layer. The compound semiconductor transistor may also include a multi-layer epitaxial barrier layer on the channel layer. The channel layer may be on a doped buffer layer or on a first un-doped buffer layer. The compound semiconductor field effect transistor may further include a gate. The gate may be on a first tier of the multi-layer epitaxial barrier layer, and through a space between portions of a second tier of the multi-layer epitaxial barrier layer.
QUALCOMM Incorporated
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Periannan Xia Gengming Bin
Chidambaram Li Tao Yang