Thomas, Kayden, Horstemeyer & Risley LLP
Pin photodiode having a wide bandwidth
 A PIN photodiode comprising a p region containing a p type dopant, an n region containing an n type dopant, an i region positioned intermediate the p region and the n region, and a relatively thick, undoped buffer region positioned between the n region and the i region which substantially decreases the capacitance of the PIN photodiode such that the photodiode bandwidth is maximized. Typically, the buffer region is formed as a layer of indium phosphide that is at least approximately 0.5 .mu.m in thickness. 
Agere Systems, Inc.
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inventional additional inventional inventional
Keon M. Robert Eugene Chia C. Dennis Ronald Orval George
Lee Frahm Chang Zolnowski Lorimor