Limbach & Limbach L.L.P.
Method for forming contact openings in a multi-layer structure that reduces overetching of the top conductive structure
 The overetching that occurs during the formation of contact openings in a substantially planarized layer of insulation material is substantially reduced by changing the thickness of the insulation material that is formed over the top conductive structure of a semiconductor device, and by forming the openings to the top conductive structure during the fabrication of a second metal layer rather than during the formation of a first metal layer. 
National Semiconductor Corporation
H
H01L
inventional
Tim Hung-Sheng Chih S. Larry
Nguyen Chen Teng Moberly