Fish & Richardson P.C.
Semiconductor memory device including semiconductor and oxide semiconductor transistors
It is an object to provide a semiconductor device with a novel structure. The semiconductor device includes memory cells connected to each other in series and a capacitor. One of the memory cells includes a first transistor connected to a bit line and a source line, a second transistor connected to a signal line and a word line, and a capacitor connected to the word line. The second transistor includes an oxide semiconductor layer. A gate electrode of the first transistor, one of a source electrode and a drain electrode of the second transistor, and one electrode of the capacitor are connected to one another.
Semiconductor Energy Laboratory Co., Ltd.
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Shunpei Kiyoshi Jun
Yamazaki Kato Koyama