Eschweiler & Potashnik, LLC
RRAM memory cell with multiple filaments
In some embodiments, the present disclosure relates to a method of forming a memory circuit. The method may be performed by forming an interconnect wire within an inter-level dielectric (ILD) layer over a substrate. A conjunct electrode structure is formed over the interconnect wire, a data storage film is formed over the conjunct electrode structure, and a disjunct electrode structure is formed over the data storage film. The data storage film, the disjunct electrode structure, and the conjunct electrode structure are patterned to form a first data storage layer between the interconnect wire and a first disjunct electrode and to form a second data storage layer between the interconnect wire and a second disjunct electrode.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Yu-Wen Chih-Yang Chin-Chieh Wen-Ting
Liao Chang Yang Chu