Cantor Colburn LLP
Nanosheet transistors having different gate dielectric thicknesses on the same chip
Embodiments are directed to a method and resulting structures for forming thin and thick gate dielectric nanosheet transistors on the same chip. A first nanosheet stack having a first sacrificial layer between a first nanosheet and a second nanosheet is formed on a substrate. A second nanosheet stack having a first sacrificial layer between a first nanosheet and a second nanosheet is formed on the substrate. The first nanosheet of the first nanosheet stack is doped and concurrently removed with the first sacrificial layer of the first nanosheet stack and the first sacrificial layer of the second nanosheet stack.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Qintao Juntao Kangguo Geng
Zhang Li Cheng Wang