Westerman, Hattori, Daniels & Adrian, LLP
Semiconductor device and method of manufacturing the same
The method includes the steps of forming an upper electrode of a capacitor by patterning a second conductive film; forming a capacitor dielectric film by patterning a ferroelectric film; and forming a lower electrode by patterning a first conductive film. A step of forming the first conductive film includes the steps of forming a lower conductive layer made of a noble metal other than iridium over a first interlayer insulating film; and forming an upper conductive layer made of a conductive material, which is different from a material for the lower conductive layer, and which is other than platinum.
Fujitsu Semiconductor Limited
H H H H
H01L H01L H01L H01L
inventional inventional inventional additional
Wensheng
Wang