Cohen, Pontani, Lieberman & Pavane
Quantum diffraction transistor
 The present invention discloses a technique for applying diffraction characteristic of electrons to a two-dimensional electronic device to manufacture multi-functional transistor having various ON/OFF states. A quantum diffraction transistor according to the present invention is capable of adjusting the amplitude of drain current and having various ON/OFF states utilizing diffraction characteristic of electrons by interposing a reflection-type diffraction grating in an electron path. The inventive multi-functional quantum diffraction transistor uses a two dimensional electron gas in formed at a different species junction in a semiconductor heterostructure, and has a bent electron path between the source electrode and the drain electrode with a reflection-type diffraction grating. The quantum diffraction effect of the electrons is used for the control of the diffracted drain current. 
Electronics and Telecommunications Research Institute
B Y H H H
B82Y Y10S H01L H01L H01L
inventional additional inventional inventional inventional
Kyoung Wan Min Cheol Seong Jae
Park Shin Lee