Slater & Matsil, L.L.P.
Structure and method for fabricating fin devices
A structure and method of forming a semiconductor device with a fin is provided. In an embodiment a hard mask is utilized to pattern a gate electrode layer and is then removed. After the hard mask has been removed, the gate electrode layer may be separated into individual gate electrodes.
Taiwan Semiconductor Manufacturing Company, Ltd.
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H01L H01L H01L
inventional inventional inventional
Chang-Yun Ming-Feng Chih-Hao
Chang Shieh Yu