3D NAND flash memory device and integration method thereof
An integration method for a 3D NAND flash memory device includes disposing a plurality of 3D triple-level cell (TLC) NAND flash memories on a CMOS die; disposing at least a NOR Flash memory on the CMOS die of the 3D NAND flash memory device; and connecting the at least a NOR Flash memory to an Open NAND Flash Interface (ONFI) of the 3D NAND flash memory device; wherein the at least a NOR Flash memory is disposed on an unused area of the CMOS die.
Yangtze Memory Technologies Co., Ltd.
G G H G H H H G H G G G H G G H G H G H H H G
G11C G11C H01L G11C H01L H01L H01L G06F H01L G11C G11C G11C H01L G06F G11C H01L G11C H01L G11C H01L H01L H01L G11C
inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional additional inventional inventional
Yueping Yi Jiawei Chunyuan
Li Gu Chen Hou