Method for forming amorphous silicon multuple layer structure
The present invention provides a method for forming an amorphous silicon multiple layer structure, the method comprises the flowing steps: first, a substrate material layer is provided, next, a first amorphous silicon layer is formed on the substrate material layer, wherein the first amorphous silicon layer includes a plurality of hydrogen atoms disposed therein, afterwards, an UV curing process is performed to the first amorphous silicon layer, so as to remove the hydrogen atoms from the first amorphous silicon layer, finally, a second amorphous silicon layer is formed on the first amorphous silicon layer.
Fujian Jinhua Integrated Circuit Co., Ltd. UNITED MICROELECTRONICS CORP.
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Wei-Hsin Tzu-Chin Chia-Lung Shih-Fang Ching-Hsiang Yi-Wei Jui-Min Mei-Ling
Liu Wu Chang Tzou Chang Chen Lee Chen