Green, Howard & Mughal LLP
III-N transistors with enhanced breakdown voltage
Techniques related to III-N transistors having enhanced breakdown voltage, systems incorporating such transistors, and methods for forming them are discussed. Such transistors include a hardmask having an opening over a substrate, a source, a drain, and a channel between the source and drain, and a portion of the source or the drain disposed over the opening of the hardmask.
Intel Corporation
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Benjamin Han Wui Robert S. Sansaptak Ravi Seung Hoon Marko
Chu-Kung Then Chau Dasgupta Pillarisetty Sung Radosavljevic