Harness, Dickey & Pierce, PLC
Method of forming nanowire and method of manufacturing semiconductor device comprising the nanowire
A method of forming a nanowire and a semiconductor device comprising the nanowire are provided. The method of forming a nanowire includes forming a patterned SiyGe1-y layer (where, y is a real number that satisfies 0≦y<1) on a base layer, and forming a first oxide layer and at least one nanowire within the first oxide layer by performing a first oxidation process on the patterned SiyGe1-y layer.
Samsung Electronics Co., Ltd.
Y H Y H B H Y Y
Y10S H01L Y10S H01L B82Y H01L Y10S Y10S
additional inventional additional inventional inventional inventional additional additional
Jun-youn Eun-ju Joong S.
Kim Bae Jeong