Husch Blackwell LLP
Semiconductor device
A semiconductor device that can retain data for a long time is provided. The semiconductor device includes a first transistor and a second transistor. The first transistor contains an oxide semiconductor in a channel formation region. The second transistor includes a first gate and a second gate. A gate of the first transistor is connected to a first electrode of the first transistor. The first electrode of the first transistor is connected to the second gate. A negative potential is applied to a second electrode of the first transistor. The first electrode and the second electrode of the first transistor include a first end portion and a second end portion, respectively. The first end portion and the second end portion face each other. The first end portion includes a first arc and the second end portion includes a second arc when seen from the top. The radius of curvature of the second arc is larger than that of the first arc.
Semiconductor Energy Laboratory Co., Ltd.
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Kiyoshi
Kato