Brinks Hofer Gilson & Lione
Magnetic detecting element having pinned magnetic layers disposed on both sides of free magnetic layer
The present invention provides a magnetic detecting element capable of increasing a difference between the ease of a conduction electron flow in a low-resistance state and the ease of a conduction electron flow in a high-resistance state to increase a resistance change ΔR. In the magnetic detecting element, a free magnetic layer or a pinned magnetic layer has a synthetic ferromagnetic structure including a first free magnetic sub-layer or a first pinned magnetic sub-layer containing a magnetic material having a positive β value, and a second magnetic sub-layer or a second pinned magnetic sub-layer containing a magnetic material having a negative β value. The β value is characteristics of a magnetic material satisfying the relationship ρ↓/ρ↑=(1+β)/(1−β)(−1≦β≦1)(wherein ρ↓ represents resistivity for minority conduction electrons, and ρ↑ represents resistivity for majority conduction electrons).
Alps Electric Co., Ltd.
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Masamichi Naoya
Saito Hasegawa