Olbon, Spivak, McClelland, Maier & Neustadt, P.C.
Solid state image sensor
 The present invention provides a solid state image sensor constructed in such a manner that, even if the impurity concentration of the wells of a transistors is increased, the junction leakage current does not increase, and thus, the picture quality of the reproduced picture is not deteriorated. On a p-type substrate, there are formed a first p-type well for a photoelectric conversion portion comprising a photodiode, and a second p-type well for a signal scanning circuit portion. In the surface portions of the first and second p-type wells, a first and a second n-type diffused layers are formed, respectively. The drain of a reset transistor and the drain of an amplifying transistor which constitute the second n-type diffused layer are connected to a power supply line. Further, the source of an address transistor which is an n-type diffused layer is connected to a vertical signal line. The gates of the amplifying transistor and the address transistor are formed between second n-type diffused layers disposed at predetermined intervals on the surface of the second p-type well. 
Kabushiki Kaisha Toshiba
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inventional additional inventional inventional
Hidetoshi Tetsuya Hisanori Ikuko Hirofumi
Nozaki Yamaguchi Ihara Inoue Yamashita