Slater & Matsil, L.L.P.
Process for fabricating silicon-on-nothing MOSFETs
A semiconductor device includes a gate stack; an air-gap under the gate stack; a semiconductor layer vertically between the gate stack and the air-gap; and a first dielectric layer underlying and adjoining the semiconductor layer. The first dielectric layer is exposed to the air-gap.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chih-Sheng Ta-Wei
Chang Wang