McDermott Will & Emery LLP
Memory devices with improved refreshing operation
A method and a system for memory cell programming and erasing with refreshing operation are disclosed. The system includes a selecting module, a processing module and a refresh module. In the method, at first, a target memory cell from a plurality of memory cells in a memory device is selected. Thereafter, the target memory cell belonging to a line of the matrix is programmed or erased by applying a selecting voltage on the target memory cell and a location-related memory cell belonging to the line of the matrix. Then, a refreshing operation to refresh the location-related cell is performed.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
G G G G G G G G G
G11C G11C G11C G11C G11C G11C G11C G11C G11C
inventional inventional additional inventional inventional inventional inventional inventional inventional
Yue-Der Cheng-Hsiung Gu-Huan Chien-Yin
Chih Kuo Li Liu