Vierra Magen Marcus LLP
Sense amplifier for bidirectional sensing of memory cells of a non-volatile memory
A sense amplifier for a memory circuit is presented that can sense a selected memory cell in either a first sensing mode, in which current from the selected memory cell flows from the memory cells into the sense amplifier, or a second sensing mode, in which current is discharged from the sense amplifier through the selected memory cell. In the first sensing mode, current from a selected memory cell is conducted through cascaded PMOS transistors to charge a sensing node, with the resultant voltage level on the sensing node used to determine the result of the sensing operation.
SanDisk Technologies LLC
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Ali Seungpil Yingchang
Al-Shamma Lee Chen