Eschweiler & Potashnik, LLC
Method and apparatus for reading RRAM cell
The present disclosure relates to a method and apparatus for performing a read operation of an RRAM cell, which applies a non-zero bias voltage to unselected bit-lines and select-lines to increase a read current window without damaging corresponding access transistors. In some embodiments, the method may be performed by activating a word-line coupled to a row of RRAM cells comprising a selected RRAM device by applying a first read voltage to the word-line. A second read voltage is applied to a bit-line coupled to a first electrode of the selected RRAM device. One or more non-zero bias voltages are applied to bit-lines and select-lines coupled to RRAM cells, within the row of RRAM cells, having unselected RRAM devices.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Jen-Sheng Chih-Yang Manish Kumar Chin-Chieh Wen-Ting Chi-Tsai Chang-Sheng Kuo-Chi Sheng-Hung Hsia-Wei
Yang Chang Singh Yang Chu Chen Liao Tu Shih Chen