Innovation Counsel LLP
Semiconductor device and manufacture thereof
A semiconductor device and its manufacturing method are presented. The semiconductor device includes a collection region, a base region adjacent to the collection region, an emission region adjacent to the base region, and a doped semiconductor layer on the emission region. The width of the doped semiconductor layer is larger than the width of the emission region, a conductive type (e.g., P-type or N-type) of the doped semiconductor layer is the same as a conductive type of the emission region. In this inventive concept, the width of the doped semiconductor layer on the emission region is larger than the width of the emission region, that equivalently increases the width of the emission region, which in turn increases the DC amplification factor (β) and therefore improves the overall performance of the semiconductor device.
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
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inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional
WeiLi YiQi JingGuo JianXiang XiaoFang
Zhao Wang Jia Cai Yang