Harness, Dickey & Pierce, P.L.C.
High electron mobility transistor and method of manufacturing the same
Provided are a high electron mobility transistor (HEMT) and a method of manufacturing the HEMT. The HEMT includes: a channel layer comprising a first semiconductor material; a channel supply layer comprising a second semiconductor material and generating two-dimensional electron gas (2DEG) in the channel layer; a source electrode and a drain electrode separated from each other in the channel supply layer; at least one depletion forming unit that is formed on the channel supply layer and forms a depletion region in the 2DEG; at least one gate electrode that is formed on the at least one depletion forming unit; at least one bridge that connects the at least one depletion forming unit and the source electrode; and a contact portion that extends from the at least one bridge under the source electrode.
Samsung Electronics Co., Ltd.
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Sun-kyu Jai-kwang Woo-chul Jong-seob Jae-joon Hyuk-soon In-jun
Hwang Shin Jeon Kim Oh Choi Hwang