Studebaker & Brackett PC
Manufacturing method of high electron mobility transistor
A manufacturing method of a high electron mobility transistor includes: forming a GaN channel layer on a semi-insulating substrate in a first growth condition; forming a transition layer on the GaN channel layer while the first growth condition is changed to a second growth condition; and forming an AlGaN electron supply layer on the transition layer in the second growth condition, wherein the GaN channel layer, the transition layer, and the AlGaN electron supply layer are continuously formed without interrupting growth.
MITSUBISHI ELECTRIC CORPORATION
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Takahiro Akihito Atsushi
Yamamoto Ohno Era