Resonant gate drive circuit with centre-tapped transformer
This invention relates to a resonant gate drive circuit for a power switching device, such as a MOSFET, that uses a center-tapped transformer to increase the driving gate voltage approximately twice as high as the supply voltage. The gate capacitance of the power switching device is charged and discharged by a constant current source, which increases the switching transition speed of the power switch. The circuit is suitable for driving a pair of low side switches with 50% duty cycle or less, such as in a variable frequency resonant converter, push-pull converter, or the like.
Queen's University at Kingston
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Kai Yan-Fei
Xu Liu