Slater Matsil, LLP
Backside structure and methods for BSI image sensors
BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Keng-Yu Chun-Chieh Wen-De Dun-Nian Jen-Cheng Shuang-Ji Min-Feng
Chou Chuang Wang Yaung Liu Tsai Kao