Jones Volentine, LLC
Method for fabricating a capacitor
A method for forming an HSG (hemispherical grain) layer on a storage electrode of a capacitor formed on a substrate is provided. The method includes a step of introducing a source gas into a reacting chamber to deposit a small amount of HSG nuclei on a conductive layer pattern of a capacitor electrode during a step of stabilizing the substrate temperature. After the substrate temperature is stabilized, a larger amount of source gas is introduced into the chamber to form additional HSG nuclei. Thereafter, a step of annealing is performed to form the HSG layer.
Samsung Electronics Co., Ltd.
H
H01L
inventional
Kyoung-Bok Seung-jin Chang-seog Seung-Dong
Lee Lee Ko Kang