Birch, Stewart, Kolasch & Birch, LLP
Structure and formation method of semiconductor device with oxide semiconductor channel
A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes an oxide semiconductor nanostructure suspended over a substrate. The semiconductor device structure also includes a source/drain structure adjacent to the oxide semiconductor nanostructure. The source/drain structure contains oxygen, and the oxide semiconductor nanostructure has a greater atomic concentration of oxygen than that of the source/drain structure. The semiconductor device structure further includes a gate stack wrapping around the oxide semiconductor nanostructure.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chih-Yu Sai-Hooi Yu-Ming
Chang Yeong Lin