Birch, Stewart, Kolasch & Birch, LLP
P-type metal oxide semiconductor material and transistor
A p-type metal oxide semiconductor material is provided, which is composed of AlxGe(1-x)Oy, wherein 0<x≦0.6, and 1.0≦y≦2.0. The p-type metal oxide semiconductor material can be applied in a transistor. The transistor may include a gate electrode, a channel layer separated from the gate electrode by a gate insulation layer, and a source electrode and a drain electrode contacting two sides of the channel layer, wherein the channel layer is the p-type metal oxide semiconductor material.
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
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inventional inventional additional inventional inventional inventional
Tzu-Chi Ren-Fong Mu-Tung Hsin-Ming Tien-Heng Shan-Haw Wen-Hsuan
Chou Cai Chang Cheng Huang Chiou Chao