IP & T Group LLP
Memory device
The present technology includes memory device and a method of operating the same. The memory device includes a current sensing circuit configured to perform an individual current sensing operation according to a verify result of each of selected program states in an individual current sensing mode and perform an entire current sensing operation according to a verify result of the entire memory cells regardless of the selected program states after the individual current sensing operation is performed in a mixed current sensing mode, and a voltage generator configured to apply a program voltage to a selected word line connected to the memory cells during a first amount of time in the individual current sensing mode and apply the program voltage to the selected word line during a second amount of time greater than the first amount of time in the mixed current sensing mode, in response to the operation code.
SK hynix Inc.
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Hyung Jin
Choi