Robinson Intellectual Property Law Office, P.C.
Memory device and manufacturing method of the same
An easy-to-use and inexpensive memory device is provided while maintaining product specifications and productivity even when a memory is formed on the same substrate as other functional circuits. The memory device of the invention includes a memory cell formed on an insulating surface. The memory cell includes a semiconductor film having two impurity regions, a gate electrode, and two wirings connected to the respective impurity regions. The two wirings are insulated from each other by applying a voltage between the gate electrode and at least one of the two wirings to alter the state of the semiconductor film.
Semiconductor Energy Laboratory Co., Ltd.
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H01L H01L H01L G11C H01L
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Etsuko Konami Tetsuji Kiyoshi
Asano Izumi Yamaguchi Kato