Robinson Intellectual Property Law Office, P.C.
Method of manufacturing a semiconductor device
A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. A barrier layer is formed on a semiconductor film having a crystal structure by plasma CVD from monosilane and nitrous oxide as material gas. In a step of forming a gettering site, a semiconductor film having an amorphous structure and containing a high concentration of noble gas element, specifically, 1&times;1020 to 1&times;1021 /cm3, is formed by plasma CVD. The film is typically an amorphous silicon film. Then gettering is conducted.
Semiconductor Energy Laboratory Co., Ltd.
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Mitsuhiro Noriyoshi Taketomi
Ichijo Suzuki Asami