Slater Matsil, LLP
Method for fabricating metal gate devices and resulting structures
A method for fabricating a semiconductor component includes forming an interlayer dielectric (ILD) layer on a substrate, forming a trench in the interlayer dielectric layer, forming a metal gate in the trench, removing a portion of the metal gate protruding from the ILD layer, reacting a reducing gas with the metal gate, and removing a top portion of the metal gate.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chai-Wei Jung-Jui Ya-Lan Yi-Cheng Po-Chi
Chang Li Chang Chao Wu