Dickinson Wright PLLC
Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control
Group III-V, II-VI and related monocrystalline compounds are grown with a rigid support of a sealed ampoule, carbon doping and resistivity control, and thermal gradient control in a crystal growth furnace. A support cylinder provides structural support for the combined sealed ampoule crucible assembly, while low-density insulating material inside the support cylinder deters convection and conduction heating. Radiation channels penetrating the low-density material provide pathways for radiation heating into and out of the seed well and transition regions of the crystal growth crucible. A hollow core in the insulation material directly beneath the seed well provides cooling in the center of the growing crystal, which enables uniform, level growth of the crystal ingot and a flat crystal-melt interface which results in crystal wafers with uniform electrical properties.
AXT, Inc.
C C C C C C Y C
C30B C30B C30B C30B C30B C30B Y10T C30B
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Xiao Gordon Wei Guo
Liu Liu