Breiner & Breiner
Silicon single crystal wafer annealing method and equipment, and silicon single crystal wafer and manufacturing method related thereto
 This invention anneals a vertical stack of two or more groups of unseparated wafers, with approximately 10 wafers in each group. The invention makes it possible to anneal more wafers in a single annealing operation under a variety of conditions, including: oxygen outer diffusion annealing to form a denuded zone; annealing to control bulk micro defects and provide intrinsic gettering functions; annealing to enhance gate oxide integrity by eliminating crystal-originated particles from the wafer surface and internal grown-in or as-grown defects; and suppression of dislocation and slip in elevated temperature environments. 
Sumitomo Metal Industries Ltd.
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Takehiro Masakazu Naoshi
Hisatomi Sano Adachi