Fleit Gibbons Gutman Bongini Bianco PL
Structure and method for forming strained FinFET by cladding stressors
Various methods and structures for fabricating a strained semiconductor fin of a FinFET device. A strained semiconductor fin structure includes a substrate, a semiconductor fin disposed on the substrate, the semiconductor fin having two fin ends, and a stressor material cladding wrapped around a portion of each of the two fin ends forming a strained semiconductor fin that includes at least one strained channel fin having stressor cladding wrapped around at least one end of the strained channel fin thereby straining the at least one strained channel fin. The stressor cladding can be a compressive nitride stressor to compressively strain a compressively strained silicon germanium fin. The stressor cladding can be a tensile nitride stressor to tensily strain a tensily strained silicon fin.
International Business Machines Corporation
H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional additional inventional additional
Juntao Kangguo
Li Cheng