McPherson Kwok Chen & Heid LLP
Mask and manufacturing method of a semiconductor device and a thin film transistor array panel using the mask
An exposure mask is provided, which includes: a light blocking opaque area blocking incident light; a translucent area; and a transparent area passing the most of incident light, wherein the translucent area generates the phase differences in the range of about −70° to about +70°.
Samsung Electronics Co., Ltd.
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H01L H01L G03F H01L H01L G03F
inventional inventional inventional additional inventional inventional
Jong-An Young-Bae Bae-Hyoun Ji-Haeng
Kim Jung Jung Han