Marger Johnson & McCollom, P.C.
Method for manufacturing semiconductor device with stagnated process gas
 According to the present invention, a process of the present invention is performed with stagnated process gas in a chamber. The process comprises the steps of supplying process gas into a chamber, blocking process gas entry and exit from the chamber so as to stagnate the supplied gas therein, and performing the process. As a result, a process time can be significantly reduced, thereby maximizing yield and reducing the substantial amount of the process gas. 
Samsung Electronics Co., Ltd.
H
H01L
inventional
Se-Jin Dae-Hoon Jae-Chul Hyun-Bo
Lee Bae Lee Shin