Robinson Intellectual Property Law Office
Semiconductor device and method for manufacturing semiconductor device
A semiconductor device with a large storage capacity per unit area is provided. The semiconductor device includes a first insulator including a first opening, a first conductor that is over the first insulator and includes a second opening, a second insulator that is over the first insulator and includes a third opening, and an oxide penetrating the first opening, the second opening, and the third opening. The oxide includes a first region at least in the first opening, a second region at least in the second opening, and a third region at least in the third opening. The resistances of the first region and the third region are lower than the resistance of the second region.
Semiconductor Energy Laboratory Co., Ltd.
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Shunpei Satoru Takanori Kiyoshi Hajime
Yamazaki Okamoto Matsuzaki Kato Kimura