Multiple threshold voltage FinFETs
A method of forming a plurality of fins having different threshold voltages from a single semiconductor layer without channel doping. The method may include; forming a first semiconductor having a uniform thickness in an unmerged region, a first merged region, and a second merged region; recessing the first semiconductor in the first and second merged regions, the first semiconductor has a different thickness in each of the unmerged region, the first merged region, and the second merged region; forming a second semiconductor on the first semiconductor in the first and second merged regions; merging the first and second semiconductors to form a first merged semiconductor in the first merged region and a second merged semiconductor in the second merged region; and forming fins in unmerged region, the first merged region, and the second merged region.
International Business Machines Corporation
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Juntao Fee Li Kangguo Ramachandra
Li Lie Cheng Divakaruni