Schmeiser, Olsen & Watts
Structures, fabrication methods, design structures for strained fin field effect transistors (FinFets)
A semiconductor structure, a fabrication method, and a design structure for a FinFet. The FinFet includes a dielectric layer, a central semiconductor fin region on the dielectric layer, a first semiconductor seed region on the dielectric layer, and a first strain creating fin region. The first semiconductor seed region is sandwiched between the first strain creating fin region and the dielectric layer. The first semiconductor seed region includes a first semiconductor material. The first strain creating fin region includes the first semiconductor material and a second semiconductor material different than the first semiconductor material. A first atom percent of the first semiconductor material in the first semiconductor seed region is different than a second atom percent of the first semiconductor material in the first strain creating fin region.
International Business Machines Corporation
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H01L H01L H01L
inventional inventional inventional
Byeong Yeol Xiaomeng Mahender Huilong
Kim Chen Kumar Zhu