Sterne, Kessler, Goldstein & Fox P.L.L.C.
Three-dimensional memory devices and fabricating methods thereof
A method for forming a 3D memory device is disclosed. The method includes: forming an alternating dielectric stack on a substrate; forming a plurality of channel holes penetrating the alternating dielectric stack; forming a channel structure in each channel hole; forming a channel column structure on the channel structure in each channel hole; trimming an upper portion of each channel column structure to form a channel plug; and forming a top selective gate cut between neighboring channel plugs.
Yangtze Memory Technologies Co., Ltd.
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inventional inventional additional inventional inventional inventional
Lidong Yu Ru Yongna Yushi Zhenyu Xiaowang Jun Qian Jifeng
Song Huang Li Hu Lu Dai Chen Tao Zhu