Method for fabricating semiconductor device
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon; forming a first cap layer on a surface of the substrate and sidewall of the gate structure; forming a second cap layer on the first cap layer; forming a third cap layer on the second cap layer; performing an etching process to partially remove the third cap layer, the second cap layer, and the first cap layer to form a first spacer and a second spacer on the sidewall of the gate structure; and forming a contact etch stop layer (CESL) on the substrate to cover the second spacer, wherein the third cap layer and the CESL comprise same deposition condition.
United Microelectronics Corp.
H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional
Chiu-Te Chun-Mao Chu-Chun
Lee Chiou Chang