Robinson Intellectual Property Law Office, P.C.
Semiconductor device and manufacturing method thereof
Provided is a miniaturized transistor with stable and high electrical characteristics with high yield. In a semiconductor device including the transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer are stacked in this order, a first sidewall insulating layer is provided in contact with a side surface of the gate electrode layer, and a second sidewall insulating layer is provided to cover a side surface of the first sidewall insulating layer. The first sidewall insulating layer is an aluminum oxide film in which a crevice with an even shape is formed on its side surface. The second sidewall insulating layer is provided to cover the crevice. A source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor film and the second sidewall insulating layer.
Semiconductor Energy Laboratory Co., Ltd.
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inventional inventional inventional
Tetsuhiro Motomu Taiga Junichi Shinya
Tanaka Kurata Muraoka Koezuka Sasagawa