Winstead Sechrest & Minick P.C.
Method and system for forming dual gate structures in a nonvolatile memory using a protective layer
A method and system for providing a semiconductor device is described. The semiconductor includes a core and a periphery. The method and system include providing a plurality of core gate stacks in the core, a plurality of sources in the core and a plurality of periphery gate stacks in the periphery. Each of the plurality of core gate stacks includes a first polysilicon gate and a WSi layer above the first polysilicon gate. The plurality of sources resides between a portion of the plurality of core gate stacks. Each of the plurality of periphery gate stacks includes a second polysilicon gate and a CoSi layer on the second polysilicon gate.
Advanced Micro Devices, Inc. Spansion LLC
H H
H01L H01L
inventional inventional
Hiroyuki Yu Wenmei Shenqing Angela Hiroyuki Kelwin Chi
Kinoshita Sun Li Fang Hui Ogawa Ko Chang