McDermott Will & Emery LLP
FinFET semiconductor device having fins with stronger structural strength
A semiconductor device including at least one fin disposed on a surface of a semiconductor substrate is provided. The fin includes a main portion extending along a first direction, and at least one secondary portion extending outward from the main portion along a second direction not collinear with the first direction.
National Chiao-Tung University Taiwan Semiconductor Manufacturing Co., Ltd.
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Cheng-Ting Chao-Hsin Samuel C. Chen-Han
Chung Chien Pan Chou