Eschweiler & Potashnik, LLC
Bonding process for forming semiconductor device structure
A method for forming a semiconductor device structure is provided. The method includes receiving a first wafer having multiple predetermined die areas. The method also includes forming a recess in the first wafer, and the recess extends in a direction substantially parallel to an edge of one of the predetermined die areas. The method further includes receiving a second wafer. In addition, the method includes bonding the first wafer and the second wafer at an elevated temperature after the recess is formed.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Jen-Hao Chih-Hang I-Shi
Liu Chang Wang