Blakely, Sokoloff, Taylor & Zafman LLP
Method for fabricating Schottky barrier tunnel transistor
A Schottky barrier tunnel transistor includes a gate electrode, and source and drain regions. The gate electrode is formed over a channel region of a substrate to form a Schottky junction with the substrate. The source and drain regions are formed in the substrate exposed on both sides of the gate electrode.
Electronics and Telecommunications Research Institute
H H
H01L H01L
inventional inventional
Moon-Gyu Tae-Youb Yark-Yeon Seong-Jae Chel-Jong Myung-Sim
Jang Kim Kim Lee Choi Jun