Maschoff Brennan
Memory cell and fabricating method thereof
A memory cell includes a selector, a fuse connected to the selector in series, a contact etch stop layer formed on the selector and the fuse, a bit line connected to the fuse, and a word line connected to the selector. The contact etch stop layer includes a high-k dielectric for improving the ability of capturing the electrons, thus the retention time of the memory cell is increased.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H H
H01L H01L
inventional inventional
Wei-Li Min-Hui Chao-Ching Chung-Yu Cheng-Yi Kuo-Hsien Jian-Shin Chin-Szu
Chen Lin Chang Hsieh Wu Cheng Tsai Lee