Saile Ackerman LLC
FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures
An NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer. As a result of their structure and the method of their fabrication, these elements have higher GMR ratios and lower resistances than elements of the prior art.
Headway Technologies, Inc.
G C H H C B Y Y H Y B G B B H H G
G11B C22C H01F H01F C22C B82Y Y10T Y10T H01F Y10T B82Y G01R B82Y B32B H01L H01L G11B
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Simon H. Cheng T. Kochan Kiyoshi Masashi Min
Liao Horng Ju Noguchi Sano Li