Blakely, Sokoloff, Taylor & Zafman LLP
Materials for interfacing high-K dielectric layers with III-V semiconductors
A group III chalcogenide layer for interfacing a high-k dielectric to a III-V semiconductor surface and methods of forming the same. A III-V QWFET includes a gate stack which comprises a high-K gate dielectric layer disposed on an interfacial layer comprising a group III chalcogenide. In an embodiment, a III-V semiconductor surface comprising a native oxide is sequentially exposed to TMA and H2S provided in an ALD process to remove substantially all the native oxide and form an Al2S3 layer on the semiconductor surface.
Intel Corporation
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Robert S. Willy Gilbert Marko
Chau Rachmady Dewey Radosavljevic