JCIPRNET
Semiconductor device and manufacturing method thereof
Semiconductor devices and manufacturing method thereof are disclosed. The semiconductor device includes a substrate, a device layer, first and second conductive layers, first and second vias, and a MIM capacitor structure. The substrate includes active and passive regions. The device layer is in the active region. The first conductive layer is over the device layer. The second conductive layer is over the first conductive layer, wherein the first conductive layer is disposed between the device layer and the second conductive layer. The first via electrically connects the first and the second conductive layers. The MIM capacitor structure is between the first and the second conductive layers and in the passive region, and includes first and second electrodes and a capacitor dielectric layer therebetween. The capacitor dielectric layer includes Group IIIA-metal oxide or nitride. The second via electrically connects the second conductive layer and one of the first and second electrodes.
Taiwan Semiconductor Manufacturing Co., Ltd.
H
H01L
inventional
Yi-Ming Cheng-Yi Jian-Shin Chin-Szu Yi-Hui Chao-Ching Min-Hui Wen-Shan
Lin Wu Tsai Lee Chen Chang Lin Chang