Roberts Mlotkowski Safran Cole & Calderon, P.C.
Low capacitance electrostatic discharge (ESD) devices
The present disclosure relates to semiconductor structures and, more particularly, to low capacitance electrostatic discharge (ESD) devices and methods of manufacture. The structure includes: a first structure comprising a pattern of a first diffusion region, a second diffusion region and a third diffusion region partly extending over a first well; and a second structure comprising a fourth diffusion region in a second well electrically connecting to the first structure to form a silicon controlled rectifier (SCR) on a bulk region of a substrate.
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Mickey Robert J. You Souvick
Yu Gauthier, Jr. Li Mitra