Withrow & Terranova, PLLC
Varying energy barriers of magnetic tunnel junctions (MTJs) in different magneto-resistive random access memory (MRAM) arrays in a semiconductor die to facilitate use of MRAM for different memory applications
Varying energy barriers of magnetic tunnel junctions (MTJs) in different magneto-resistive random access memory (MRAM) arrays in a semiconductor die to facilitate use of MRAM for different memory applications is disclosed. In one aspect, energy barriers of MTJs in different MRAM arrays are varied. The energy barrier of an MTJ affects its write performance as the amount of switching current required to switch the magnetic orientation of a free layer of the MTJ is a function of its energy barrier. Thus, by varying the energy barriers of the MTJs in different MRAM arrays in a semiconductor die, different MRAM arrays may be used for different types of memory provided in the semiconductor die while still achieving distinct performance specifications. The energy barrier of an MTJ can be varied by varying the materials, heights, widths, and/or other characteristics of MTJ stacks.
Qualcomm Incorporated
H H G H G G H G G
H01L H01L G11C H01F G11C G11C H01L G11C G11C
inventional inventional inventional inventional inventional inventional additional inventional inventional
Seung Hyuk Wah Nam Wei-Chuan Xia
Kang Hsu Chen Li