Scully, Scott, Murphy & Presser, P.C.
EDRAM including metal plates
A method for forming a memory device is provided by first forming at least one trench in a semiconductor substrate. Next, a lower electrode is formed in the at least one trench, and thereafter a conformal dielectric layer is formed on the lower electrode.An upper electrode is then formed on the conformal dielectric layer. The forming of the upper electrode may include a conformal deposition of metal nitride layer, and a non-conformal deposition of an electrically conductive material atop the metal nitride layer, in which the electrically conductive material encloses the at least one trench.
International Business Machines Corporation
H H
H01L H01L
inventional inventional
Thomas W. Mahender Keith Kwong Hon
Dyer Kumar Wong