Harness, Dickey & Pierce, P.L.C.
Magnetic random access memories and methods of operating the same
A spin transfer torque magnetic random access memory (STT-MRAM) and includes: a memory cell and a reference cell configured to operate as a reference when data stored in the memory cell is read. The memory cell includes: a first magnetic tunneling junction (MTJ) element and a first transistor connected to the first MTJ element. The reference cell includes: second and third MTJ elements connected in parallel; and second and third transistors that are connected to the second and third MTJ elements, respectively. The STT-MRAM further includes a control circuit having a write circuit configured to supply write currents having opposite directions to the second and third MTJ elements.
Samsung Electronics Co., Ltd.
G G G G G G G
G11C G11C G11C G11C G11C G11C G11C
inventional inventional inventional inventional inventional inventional inventional
Seung-jun Kwang-seok Hyung-soon
Lee Kim Shin