Birch, Stewart, Kolasch & Birch, LLP
Method for forming semiconductor structure by patterning resist layer having inorganic material
A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a resist layer over the material layer. The resist layer includes an inorganic material and an auxiliary, and the inorganic material includes a plurality of metallic cores, and a plurality of first linkers bonded to the metallic cores. The method also includes exposing a portion of the resist layer by performing an exposure process, and the auxiliary reacts with the first linkers during the exposure process. The method further includes etching a portion of the resist layer to form a patterned resist layer and patterning the material layer by using the patterned resist layer as a mask. The method also includes removing the patterned resist layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H G H
H01L G03F H01L
inventional inventional inventional
Chin-Hsiang Ching-Yu An-Ren
Lin Chang Zi