Lee IP Law, PC
Manufacturing method of gallium nitride substrate
A method of manufacturing a gallium nitride substrate, the method including forming a first buffer layer on a silicon substrate such that the first buffer layer has one or more holes therein; forming a second buffer layer on the first buffer layer such that the second buffer layer has one or more holes therein; and forming a GaN layer on the second buffer layer, wherein the one or more holes of the first buffer layer are filled by the second buffer layer.
Samsung Electronics Co., Ltd.
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Sam Mook Jun Youn Mi Hyun Young Jo
Kang Kim Kim Tak