Amin, Turocy & Watson, LLP
Programmable device compatible with vertical transistor flow
The present disclosure relates to a programmable device. The programmable device comprises a first vertical transistor; and a second vertical transistor coupled to the first vertical transistor via a shared terminal, wherein: a first gate dielectric of the first vertical transistor has a first thickness and a second gate dielectric of the second vertical transistor has a second thickness, the first thickness being greater than the second thickness, and the second gate dielectric breaks down based on an application of a gate voltage that is lower than a first breakdown voltage of the first gate dielectric and higher than a second breakdown voltage of the second gate dielectric.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Qintao Kangguo Juntao Geng
Zhang Cheng Li Wang