Thomas, Kayden, Horstemeyer & Risley
Method for forming an SOI structure with improved carrier mobility and ESD protection
A semiconductor device and method for forming the same including improved electrostatic discharge protection for advanced semiconductor devices, the semiconductor device including providing semiconductor substrate having a pre-selected surface orientation and crystal direction; an insulator layer overlying the semiconductor substrate; a first semiconductor active region overlying the insulator layer having a first surface orientation selected from the group consisting of <100> and <110>; a second semiconductor active region extending through a thickness portion of the insulator layer having a second surface orientation selected from the group consisting of <110> and <100> different from the first surface orientation; wherein MOS devices including a first MOS device of a first conduction type is disposed on the first semiconductor active region and a second MOS device of a second conduction type is disposed on the second semiconductor active region.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Kuang-Hsin Di-Hong Hung-Wei Hsun-Chih
Chen Lee Chen Tsao