Eschweiler & Associates, LLC
Conductive diffusion barrier structure for ohmic contacts
An integrated circuit includes a p-type region formed beneath a surface of a semiconductor substrate, and an n-type region formed beneath the surface of the semiconductor substrate. The n-type region meets the p-type region at a p-n junction. A diffusion barrier structure, which is beneath the surface of the semiconductor substrate and extends along a side of the p-n junction, limits lateral diffusion between the p-type region and n-type region.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chin-Chia Bor-Zen Kang-Min Chen-Chung Han-Wei
Chang Tien Kuo Lai Yang