Husch Blackwell LLP
Semiconductor device
A semiconductor device that is suitable for miniaturization and higher density is provided. A semiconductor device includes a first transistor over a semiconductor substrate, a second transistor including an oxide semiconductor over the first transistor, and a capacitor over the second transistor. The capacitor includes a first conductor, a second conductor, and an insulator. The second conductor covers a side surface of the first conductor with an insulator provided therebetween.
Semiconductor Energy Laboratory Co., Ltd.
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Shunpei Masayuki Kiyoshi
Yamazaki Sakakura Kato