Townsend and Townsend and Crew LLP
Pseudomorphic step-doped-channel field-effect transistor
 A pseudomorphic step-doped-channel field-effect transistor is provided, which has advantages of large transconductance, high electron mobility, high gate voltage swing and high current density, and can increase the pinch-off voltage tolerance. Thus the pseudomorphic step-doped-channel field-effect transistor is suitable for high-speed, high-power, and large-input signal circuitry systems. The pseudomorphic step-doped-channel field-effect transistor comprises: a semi-insulating GaAs substrate; an undoped GaAs layer formed on the GaAs substrate to serve as a buffer layer; an n-doping InGaAs layer formed on the undoped GaAs layer to serve as a channel layer; an undoped AlGaAs layer formed on the n-doping InGaAs layer to serve as a Schottky contact layer; an n-doping GaAs layer formed on the undoped AlGaAs layer; and metal layers formed on the undoped AlGaAs layer and the n-doping GaAs layer to respectively serve as a gate, a drain and a source of the pseudomorphic step-doped-channel field-effect transistor. 
National Science Council
H
H01L
inventional
Lih-Wen Wen-Chau
Laih Liu