Slater Matsil, LLP
Deep trench isolation structures and methods of forming same
An embodiment isolation structure includes a first passivation layer over a bottom surface and extending along sidewalls of a trench in a semiconductor substrate, wherein the first passivation layer includes a first dielectric material. The semiconductor device further includes a passivation oxide layer in the trench on the first passivation layer, wherein the passivation oxide layer includes an oxide of the first dielectric material and has a higher atomic percentage of oxygen than the first passivation layer, The semiconductor device further includes a second passivation layer in the trench on the passivation oxide layer, wherein the second passivation layer also includes the first dielectric material and has a lower atomic percentage of oxygen than the passivation oxide layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Cheng-Hsien Chih-Yu Cheng-Yuan Yeur-Luen Yen-Ting
Chou Lai Tsai Tu Chiang