Posz Law Group, PLC
Manufacturing method of semiconductor device
A manufacturing method of a semiconductor device having an ohmic electrode is disclosed. The manufacturing method includes: forming a metal thin film on a rear surface of a semiconductor substrate; forming an ohmic electrode by laser annealing by irradiating the metal thin film with laser beam; and dicing the semiconductor substrate into chips by cutting at a dicing region of the semiconductor substrate. In forming the ohmic electrode, laser irradiation of the metal thin film is performed on a chip-by-chip basis while the dicing region is not being irradiated with the laser beam.
DENSO CORPORATION
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Tetsuji Kazuhiko Nobuyuki Jun
Kondou Sugiura Kato Kawai