McDermott Will & Emery LLP
Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure
A method of manufacturing a semiconductor device includes forming a silicon substrate, forming a buffer layer on the silicon substrate, and forming a nitride semiconductor layer on the buffer layer. The buffer layer includes a first layer, a second layer, and a third layer. The first layer includes AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and has a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate. The second layer is formed on the first layer, includes AlxInyGa1-x-yN (0≦x<1, 0≦y<1, 0≦x+y<1), and has a lattice constant LP2 that is greater than LP1 and smaller than LP0. The third layer is formed on the second layer, includes AlxInyGa1-x-yN (0≦x<1, 0≦y<1, 0≦x+y<1), and has a lattice constant LP3 that is smaller than LP2.
SAMSUNG ELECTRONICS CO., LTD.
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Jun-youn Joo-sung Jae-won Jae-kyun Young-jo Hyo-ji
Kim Kim Lee Kim Tak Choi