Brinks Hofer Gilson & Lione
Spin-valve magnetoresistive element
 A spin-valve magnetoresistive element includes a hard bias layer formed on a pinned magnetic layer with a non-magnetic layer therebetween, and thus the magnetic field from the hard bias layer is efficiently applied into a free magnetic layer. Also, the pinned magnetic layer is not influenced by the hard bias layer because of the interposition of the non-magnetic layer. Accordingly, the pinned magnetic layer and the free magnetic layer are properly put into single magnetic domain states, and thus, Barkhausen noise is reduced and satisfactory micro-track-asymmetry can be obtained. 
Alps Electric Co., Ltd.
B G G B G G H H
B82Y G11B G01R B82Y G11B G11B H01F H01L
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Masamichi Toshinori
Saito Watanabe