Pennie & Edmonds LLP
GaAs MESFET having LDD and non-uniform P-well doping profiles
A MESFET has a conduction channel provided with a first doping profile in a first portion which extends between the source and the gate, and a second doping profile in a second portion which extends between the gate and the drain. A background p-type region is provided beneath the first portion, but not necessarily behind the second portion.
Anadigics, Inc.
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Weiqi
Li