Mills & Onello LLP
Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture
This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.
Samsung Electronics Co., Ltd.
H
H01L
inventional
Woo-Gwan Chang-Sup Im-Soo Hyung-Ho Jeong-Nam Yu-Kyung Doo-Won
Shim Mun Park Ko Han Kim Kwon