Eschweiler & Potashnik, LLC
Semiconductor imaging device having improved dark current performance
In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H H H H H H
H01L H01L H01L H01L H01L H01L H01L
inventional inventional additional inventional inventional inventional inventional
Wei Chuang Chen-Jong Feng-Jia Jhy-Jyi Chun-Wei Seiji Feng-Chi Wei-Cheng Dun-Nian Yimin Jen-Cheng
Wu Wang Shiu Sze Chang Takahashi Hung Hsu Yaung Huang Liu