Slater Matsil, LLP
Semiconductor devices and methods of manufacture thereof having guard ring structure
In some embodiments, an integrated circuit (IC) device includes a substrate having a first functional region, a second functional region and a third functional region. The IC device also includes a plurality of dielectric layers over the substrate, a first guard ring in the plurality of dielectric layers and around the first functional region, and a second guard ring in the plurality of dielectric layers and around the second functional region. The second guard ring is separate from the first guard ring, and the third functional region is free of a guard ring. The IC device further includes a seal ring in the plurality of dielectric layers. The seal ring encircles the first and the second guard rings, and is separate from the first and the second guard rings.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Ying-Ju Nien-Fang Tsung-Yuan Hsien-Wei Jie Hung-Yi
Chen Wu Yu Chen Chen Kuo