F. Chau & Associates, LLC
Transistor structure of a semiconductor device
A semiconductor device including: a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate pattern, wherein a dielectric constant of the first insulator is different from a dielectric constant of the second insulator, and wherein a height of the second insulator is greater than a height of the second gate pattern.
Samsung Electronics Co., Ltd.
H H H H H
H01L H01L H01L H01L H01L
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Yong-Ho Seung-Jae Jung-Chan Dae-Young Myeong-Cheol Sang-Bom
Jeon Lee Lee Kwak Kim Kang