Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
CMOS (complementary metal oxide semiconductor) type solid-state image pickup device using N/P+ substrate in which N-type semiconductor layer is laminated on P+ type substrate main body
A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.
Kabushiki Kaisha Toshiba
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H01L H01L H01L
inventional additional inventional
Ikuko Tetsuya Hiroshige Hirofumi Nagataka Hisanori
Inoue Yamaguchi Goto Yamashita Tanaka Ihara