Birch, Stewart, Kolasch & Birch, LLP
High write selectivity and low power magnetic random access memory and method for fabricating the same
A low-power magnetic random access memory (MRAM) with high write selectivity is provided. Write word lines and pillar write word lines covered with a magnetic material are disposed in an zigzag relation, solving the magnetic interference problem generated by cells adjacent to the pillar write word line in the magnetic RAM with the pillar write word line form. According to the disclosed structure, each of the cells has a smaller bit size and a lower write current. This effectively reduces the power consumption of the MRAM.
Industrial Technology Research Institute
G
G11C
inventional
Chien-Chung Ming-Jer Shu-En Yung-Hsiang
Hung Kao Li Chen