Cantor Colburn LLP
iFinFET
A technique relates to a semiconductor device. A stack includes two or more nanowires separated by a high-k dielectric material, the high-k dielectric material being formed on at least a center portion of the two or more nanowires in the stack. A separation space between the two or more nanowires is less than two times a thickness of the high-k dielectric material formed on a side wall of the two or more nanowires. A source or a drain formed on sides of the stack.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Kangguo Juntao Chen Xin
Cheng Li Zhang Miao