Lee IP Law, PC
Method of detecting failure of a semiconductor device
A method of detecting failure of a semiconductor device includes forming an active fin on an active region of a substrate, the active fin extending in a first direction, forming a gate structure on the active fin, the gate structure extending in a second direction intersecting the first direction, forming source/drain layers on respective portions of the active fins at opposite sides of the gate structure, forming a wiring to be electrically connected to the source/drain layers, and applying a voltage to measure a leakage current between the source/drain layers. Only one or two active fins may be formed on the active region. Only one or two gate structures may be formed on the active fin.
Samsung Electronics Co., Ltd.
G H H
G01R H01L H01L
inventional inventional inventional
Hwa-Sung Min-Seob Ji-Young Sung-Gun Zhan Ju-Hyun
Rhee Kim Choi Kang Zhan Kim