Cool Patent, P.C.
Modulation-doped multi-gate devices
Modulation-doped multi-gate devices are generally described. In one example, an apparatus includes a semiconductor substrate having a surface, one or more buffer films coupled to the surface of the semiconductor substrate, a first barrier film coupled to the one or more buffer films, a multi-gate fin coupled to the first barrier film, the multi-gate fin comprising a source region, a drain region, and a channel region of a multi-gate device wherein the channel region is disposed between the source region and the drain region, a spacer film coupled to the multi-gate fin, and a doped film coupled to the spacer film.
Intel Corporation
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Gilbert Ravi Jack T. Marko Mantu K.
Dewey Pillarisetty Kavalieros Radosavljevic Hudait