Maschoff Brennan
Integrated circuit
A device includes a dielectric layer, an interlayer metal pad in the dielectric layer, a first capacitor over the interlayer metal pad, and a second capacitor over the dielectric layer. The first capacitor includes a first bottom capacitor electrode over and in contact with the interlayer metal pad, a first top capacitor electrode, and a first inter-electrode dielectric layer between the first bottom capacitor electrode and the first top capacitor electrode. The second capacitor includes a second bottom capacitor electrode over and in contact with the dielectric layer, a second top capacitor electrode, and a second inter-electrode dielectric layer between the second bottom capacitor electrode and the second top capacitor electrode.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H H H H H H
H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional additional
Chih-Ping Chun-Hung Hsiang-Chi Ching-Chung Yi-Sin Cheng-Chang Chung-Long Shao-Yu Wei-Kung Kuan-Chi
Chao Chen Chen Hsu Wang Hsu Chang Chen Tsai Tsai