Schmeiser, Olsen & Watts
Electrostatic discharge protection device and method of fabricating same
A silicon control rectifier and an electrostatic discharge protection device of an integrated circuit including the silicon control rectifier. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.
International Business Machines Corporation
H H H H
H01L H01L H01L H01L
inventional inventional inventional inventional
Souvick Mahmoud A. Christopher Stephen Robert J. Junjun
Mitra Mousa Putnam Gauthier, Jr. Li