Collard & Roe, P.C.
Thermal treatment process for forming thin film transistors without the use of plasma treatment to further improve the output property of the thin film transistor
A process for forming a thin film transistor includes steps of (a) forming a gate on a portion of a substrate, (b) forming a gate dielectric layer, a semiconductor layer, a source, a drain, and a passivation in order on the substrate, and (c) proceeding a thermal treatment under atmosphere of a specific assistant gas. The specific assistant gas is one selected from a group consisting of hydrogen, steam, inert gases, and gas mixtures thereof. After providing the specific assistant gas during the thermal treatment, the process can improve the output property of the thin film transistor for avoiding double hump phenomenon.
Hannstar Display Corp.
H H
H01L H01L
inventional inventional
Chia-Sheng In-Cha Chih-Yu Shih-Ming
Ho Hsieh Peng Chen