JCIPRNET
Semiconductor devices, FinFET devices and methods of forming the same
Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate, a gate over the substrate and a gate dielectric layer between the gate and the substrate. The gate dielectric layer includes an oxide-inhibiting layer having a dielectric constant greater than about 8 and being in an amorphous state.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chia-Ming Miin-Jang Wei-Cheng Chin-Kun Liang-Chen
Tsai Chen Wang Wang Chi