Semiconductor device having a dislocation loop located within a boundary created by source/drain regions and a method of manufacture therefor
The present invention provides a method for manufacturing a transistor device, a method for manufacturing an integrated circuit, and a transistor device. The method for manufacturing the transistor device, among other steps, includes forming a gate structure over a substrate and forming source/drain regions in the substrate proximate the gate structure, the source/drain regions having a boundary that forms an electrical junction with the substrate. The method further includes forming dislocation loops in the substrate, the dislocation loops not extending outside the boundary of the source/drain regions.
Texas Instruments Incorporated
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Antonio Luis Pacheco Kaiping Amitabh Jihong
Rotondaro Liu Jain Chen