Manufacturing method for improving reliability of polysilicon thin film transistors
The invention discloses a manufacturing method for improving the reliability of polysilicon thin film transistors to solve electric leaking problem due to the roughness of polysilicon layer surface. In the thin film transistor manufacturing process, a polysilicon layer surface is oxidized to produce a silicon oxide layer which is then removed by an etching solution. This method can planarize bumps on the polysilicon layer generated due to re-crystallization so as to effectively lower the roughness of the polysilicon surface, thus increasing the reliability of thin film transistors.
Industrial Technology Research Institute
H H H
H01L H01L H01L
inventional inventional inventional
Jeng-Hung Wen-Tung
Sun Wang