IP & T Group LLP
Method for manufacturing a magnetic semiconductor memory MRAM comprising etching a magnetic tunnel junction layer formed on a lower electrode utilizing an upper electrode having annular shape
A method for manufacturing a semiconductor memory device includes forming a magnetic tunnel junction layer on a lower electrode, forming a spacer having an annular shape on the magnetic tunnel junction layer, forming upper electrodes on both sidewall surfaces of the annular shaped spacer, removing the spacer, and etching the magnetic tunnel junction layer by using the upper electrodes as an etch mask.
SK Hynix Inc.
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Seung Hyun
Lee