Robinson Intellectual Property Law Office
Semiconductor device
A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.
Semiconductor Energy Laboratory Co., Ltd.
H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L
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Tadashi Mai Kosei
Nakano Sugikawa Noda