Mills & Onello, LLP
Method of forming LED semiconductor device having annealed encapsulant layer and annealed luminescence conversion material layer
In a method of forming an LED semiconductor device, and in an LED semiconductor device, an LED is provided on a substrate. A first encapsulant material layer is provided on the LED, and the first encapsulant material layer is firstly annealed. A luminescence conversion material layer is provided on the firstly annealed first encapsulant material layer, and the first encapsulant material layer and the luminescence conversion material layer and secondly annealed.
Samsung Electronics Co., Ltd.
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YuSik
Kim