Slater Matsil, LLP
Fin field effect transistor (FinFET) device structure and method for forming the same
A FinFET device structure and method for forming the same are provided. The FinFET device structure includes a fin structure formed over a substrate and a gate structure traversing over the fin structure. The gate structure includes a gate electrode layer which includes an upper portion above the fin structure and a lower portion below the fin structure, the virtual surface is formed between the upper portion and the lower portion, and the lower portion has a tapered width which is gradually tapered from the virtual interface to a bottom surface of the lower portion.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Yi-Jen Chai-Wei Bo-Feng Chang-Yin
Chen Chang Young Chen