Haynes and Boone, LLP
Source/drain metal contact and formation thereof
The present disclosure provides a method for semiconductor fabrication. The method includes epitaxially growing source/drain feature on a fin; forming a silicide layer over the epitaxial source/drain feature; forming a seed metal layer on the silicide layer; forming a contact metal layer over the seed metal layer using a bottom-up growth approach; and depositing a fill metal layer over the contact metal layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chia-Hao Shih-Chuan Tien-Lu Jia-Chuan Chih-Hao Yu-Ming
Chang Chiu Lin You Wang Lin