Jacobson Holman PLLC
Method for fabricating flash memory device
A method for fabricating a flash memory device begins with forming in sequence a tunnel oxide layer, a floating gate, an oxide-nitride-oxide (ONO) layer, a control gate, and a hard mask nitride layer on a silicon substrate. The hard mask nitride layer, the control gate, the ONO layer, and the floating gate are then patterned in sequence. Next, a sealing nitride layer is formed on a lateral side of the patterned structure. Also, in order to form a spacer, a first insulating layer is deposited on an entire resultant structure and then selectively patterned. Thereafter, second, third and fourth insulating layers are formed in sequence on the entire resultant structure including the spacer, and a photo resist pattern is then formed on the fourth insulating layer to define a metal contact area.
Hynix Semiconductor Inc.
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inventional inventional inventional
Seung Cheol Dong Jin
Lee Kim