Harness, Dickey & Pierce, P.L.C.
Semiconductor device with at least a portion of gate electrode enclosed by an insulating structure and method of fabricating the same
A semiconductor device may include active patterns extended in a first direction and spaced apart from each other in the first direction, a device isolation layer defining the active patterns, an insulating structure provided between the active patterns and between the device isolation layer, and a gate structure disposed on the insulating structure and extended in a second direction crossing the first direction. The gate structure may include an upper portion and a lower portion. The lower portion of the gate structure may be enclosed by the insulating structure.
Samsung Electronics Co., Ltd.
H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Sangho Hui-Jung Junsoo Kyujin Yoosang Jae-Hwan
Lee Kim Kim Kim Hwang Cho