Oliff & Berridge, PLC
Semiconductor memory device
The invention provides SRAMs that can reduce memory cells in size and correct light proximity effect. Gate electrode layers in a first layer, drain&#8212;drain connection layers in a second layer, and drain-gate connection layers in a third layer define conduction layers of a flip-flop. The drain-gate connection layer has an extension section extending in a direction toward the drain-gate connection layer. The drain-gate connection layer 41b has an extension section extending in a direction toward the drain-gate connection layer.
Seiko Epson Corporation
H Y H
H01L Y10S H01L
inventional additional inventional
Satoru Takafumi Takashi Masahiro
Kodaira Noda Kumagai Takeuchi