DLA Piper LLP (US)
Nitride-based semiconductor device and method for preparing the same
A nitride-based semiconductor device includes a patterned substrate having an etched surface that is formed with a plurality of protrusions, an aluminum nitride (AlN)-based film disposed on the etched surface, and a nitride-based semiconductor stacked structure disposed on the aluminum nitride-based film. Each of the protrusions has a side face. The AlN-based film includes a plurality of crystal defects formed on the side face of each protrusion. Each of the crystal defects has a width of smaller than 20 nm and/or the number of the crystal defects that are formed on the side face of each protrusion and that have a width of greater than 10 nm is less than 10. A method for preparing the semiconductor device is also disclosed.
XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
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Chen-ke Jianming Chang-Cheng Xueliang Bing-Yang Chung-Ying
Hsu Liu Chuo Zhu Chen Chang