Slater & Matsil, L.L.P.
Forming inter-device STI regions and intra-device STI regions using different dielectric materials
An integrated circuit structure includes a substrate having a first portion in a first device region and a second portion in a second device region; and two insulation regions in the first device region and over the substrate. The two insulation regions include a first dielectric material having a first k value. A semiconductor strip is between and adjoining the two insulation regions, with a top portion of the semiconductor strip forming a semiconductor fin over top surfaces of the two insulation regions. An additional insulation region is in the second device region and over the substrate. The additional insulation region includes a second dielectric material having a second k value greater than the first k value.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Feng Tsung-Lin Hung-Ming Chang-Yun
Yuan Lee Chen Chang