Method for manufacturing a transistor device having an improved breakdown voltage and a method for manufacturing an integrated circuit using the same
The present invention provides a method for manufacturing a transistor device, and a method for manufacturing an integrated circuit including the same. The method for manufacturing the transistor device, among other elements, includes forming a gate structure over a substrate, implanting an atom selected from the group consisting of fluorine, silicon, or germanium into the substrate proximate the gate structure to cause at least a portion of the substrate to be in a sub-amorphous state, and implanting a dopant into the substrate having the implanted atom therein, thereby forming source/drain regions in the substrate, wherein the transistor device does not have a halo/pocket implant.
Texas Instruments Incorporated
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Eddie H. Srinivasan Jihong Amitabh
Breashears Chakravarthi Chen Jain