WPAT, PC
Micro-light-emitting diode device and method for manufacturing the same
A micro-light-emitting diode (micro-LED) device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer includes a first bottom surface. The active layer is disposed on the first semiconductor layer. The second semiconductor layer disposed on the active layer includes a second bottom surface. A surface of the second semiconductor layer opposite to the active layer is a light-exiting surface of the micro-LED device. The second semiconductor layer has different thicknesses, in which a minimum thickness of the second semiconductor layer is located at an edge or at least one side of the second semiconductor layer. Vertical-projection zones of the first semiconductor layer, the active layer, and the second semiconductor layer on the first bottom surface are substantially the same.
AU OPTRONICS CORPORATION
H H H
H01L H01L H01L
inventional inventional additional
Cheng-Chieh Tsung-Yi
Chang Lin