Fitzpatrick, Cella, Harper & Scinto
Pin amorphous silicon photovoltaic element with counter-doped intermediate layer
 A pin type photovoltaic element having an electroconductive substrate and a cell stacked with an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor, all composed of a non-single crystal material containing silicon, and featuring an intermediate layer. The intermediate layer composed of non-single material containing silicon atoms as the matrix and atoms of elements belonging to Group IIIA and VA of the periodic table is between the i-type conductor layer and the p-type conductor layer or the n-type semiconductor layer. The intermediate layer may contain carbon atoms and/or germanium atoms. 
Canon Kabushiki Kaisha
H H Y H H Y Y H H Y
H01L H01L Y02E H01L H01L Y02P Y02E H01L H01L Y02E
inventional inventional additional inventional inventional additional additional inventional inventional additional
Masafumi Tatsuyuki Keishi Mitsuyuki Yasushi
Sano Aoike Saitoh Niwa Fujioka