Duane Morris LLP
Semiconductor device with metal silicides having different phases
A fully silicided gate with a selectable work function includes a gate dielectric over the substrate, a first metal silicide layer over the gate dielectric, and a second metal silicide layer wherein the first metal silicide has a different phase then the second metal silicide layer. The metal silicide layers comprises at least one alloy element. The concentration of the alloy element on the interface between the gate dielectric and the metal silicide layers influence the work function of the gate.
Taiwan Semiconductor Manufacturing Co., Ltd.
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inventional inventional additional
Chih-Wei Wei-Jung Cheng-Tung Shau-Lin
Chang Lin Lin Shue