Fliesler, Dubb, Meyer & Lovejoy LLP
Integrated circuit having, and process providing, different oxide layer thicknesses on a substrate
An integrated circuit ("IC") having three different oxide layer thicknesses and a process for manufacturing the IC using a single oxide growth step is provided. A first region is formed on a substrate surface with oxidation enhancing properties. A second region is formed on the substrate surface with a dose of nitrogen that retards oxidation. An oxide layer is grown from the first and the second regions and a third region of the substrate such that the first, second, and third regions yield a first oxide layer for the capacitor, a second oxide layer for the read transistor and a third oxide layer for the write transistor.
Advanced Micro Devices, Inc.
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H01L H01L H01L
inventional inventional inventional
Sunil Xiao-Yu Radu M.
Mehta Li Barsan