Roberts Calderon Safran & Cole, P.C.
Cap structure
The present disclosure relates to semiconductor structures and, more particularly, to a cap structure and methods of manufacture. The structure includes: a gate structure composed of conductive gate material; sidewall spacers on the gate structure, extending above the conductive gate material; and a capping material on the conductive gate material and extending over the sidewall spacers on the gate structure.
GLOBALFOUNDRIES U.S. INC.
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Mitchell Patrick Chih-Chiang Michael Junsic Haigou Huy Jinsheng Daniel
Rutkowski Carpenter Chang Aquilino Hong Huang Cao Gao Jaeger