McDermott Will & Emery LLP
Semiconductor device with bump stop structure
A method for manufacturing semiconductor devices is provided. In the method, a conductive pad and a metal protrusion pattern are formed in a metallization layer. A passivation layer is conformally deposited over the metallization, and a protection layer is conformally deposited over the passivation layer. Further, a post-passivation interconnect structure (PPI) is conformally formed on the protection layer, and the PPI structure includes a landing pad region, a protrusion pattern over at least a portion of the landing pad region and a connection line electrically connected to the conductive pad. A solder bump is then placed on the landing pad region in contact with the protrusion pattern of PPI structure. A to semiconductor device with bum stop structure is also provided.
Taiwan Semiconductor Manufacturing Co., Ltd.
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additional additional additional additional additional additional additional additional additional additional additional additional additional additional inventional additional additional additional inventional additional inventional inventional additional additional additional additional additional additional additional additional additional inventional additional additional additional additional additional additional additional additional additional additional additional additional additional additional additional additional inventional additional additional additional additional inventional
Hsien-Wei Jie
Chen Chen