Egbert Law Offices
Pseudo static random access memory and data refresh method thereof
A data refresh method of a pseudo static random access memory is implemented by the following procedure. First, an address string and a refresh signal are provided, in which the address string is used for the reference of data reading and writing positions. Secondly, within at least one address of the address string, the active time of a word line of the PSRAM is set to be equivalent to or less than a half of the period of the refresh signal. Then, refreshing performs while the word line is off, and reading and writing are performed while the word line is active. If writing is requested while the word line is off, the writing will be performed when an address transition detection signal ATD switches to the high level in the next address.
Elite Semiconductor Memory Technology, Inc.
G G
G11C G11C
inventional inventional
Pei Jey Chien Yi
Huang Chang