Nixon & Vanderhye, P.C.
Current perpendicular to plane magneto-resistance effect element, magnetic head, and magnetic recording/reproducing device
A current perpendicular to plane magneto-resistance effect element includes: a magneto-resistance effect film comprised of a fixed magnetization layer, a free magnetization layer, and a complex spacer layer including an insulating layer and current paths formed through the insulating layer; a biasing mechanism for stabilizing the free magnetization layer; a shielding mechanism for ensuring a reproducing resolution of the magneto-resistance effect element; and a pair of electrodes for flowing a current perpendicular to a film surface of the magneto-resistance effect element; wherein a resistance area product (RA:Ω×μm2) is set to 0.00062×√{square root over ((GAP))}×TW+0.06 when a track width of the magneto-resistance effect element is defined as TW (nm) and a gap length of the magneto-resistance effect element is defined as GAP (nm).
Kabushiki Kaisha Toshiba
G G B G G H
G11B G11B B82Y G11B G01R H01L
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Dan Hitoshi Masahiro Xin Michiko Masayuki
Abels Iwasaki Takashita Li Hara Takagishi