Ryan, Mason & Lewis, LLP
Vertical transistors with various gate lengths
A method for manufacturing a semiconductor device includes forming a plurality of fins on a semiconductor substrate. In the method, at least two spacer layers are formed around a first fin of the plurality of fins, and a single spacer layer is formed around a second fin of the plurality of fins. The at least two spacer layers include a first spacer layer including a first material and a second spacer layer including a second material different from the first material. The single spacer layer includes the second material. The method also includes selectively removing part of the first spacer layer to expose part of the first fin, and epitaxially growing a source/drain region around the exposed part of the first fin.
International Business Machines Corporation
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Kangguo ChoongHyun Shogo Juntao
Cheng Lee Mochizuki Li