Forefront IP Lawgroup, PLLC
Multi-gate III-V quantum well structures
Methods of forming microelectronic structures are described. Embodiments of those methods include forming a III-V tri-gate fin on a substrate, forming a cladding material around the III-V tri-gate fin, and forming a hi k gate dielectric around the cladding material.
Intel Corporation
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Niloy Jack Gilbert Matthew V. Robert S. Uday Marko Ravi Titash
Mukherjee Kavalieros Dewey Metz Chau Shah Radosavljevic Pillarisetty Rakshit