Fenwick & West LLP
Backside illumination image sensor and method for reducing dark current of backside illumination image sensor
A backside illumination image sensor and a method for reducing a dark current of the backside illumination image sensor. The backside illumination image sensor comprises: a photodiode, a first conductive type isolated layer (120); a gate structure of a pass transistor, corresponding to the first conductive type isolated layer (120) and formed on an upper surface of a first conductive type semiconductor substrate (100), the gate structure (130) comprising: gate oxide (131), a gate layer (132), and a gate sidewall (133), and the gate structure (130) correspondingly covering the photodiode; and a floating diffusion zone (140), formed in the first conductive type semiconductor substrate (100) and having second conductive type heavy doping. In the backside illumination image sensor, a defect does not easily appear on a surface, right above the photodiode, of the first conductive type semiconductor substrate (100), so that a dark current is effectively prevented from being produced.
Galaxycore Shanghai Limited Corporation
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Wenqiang Jie Lixin Ze
Li Li Zhao Xu