Method for fabricating strained-silicon metal-oxide semiconductor transistors
A method for fabricating strained-silicon transistors is disclosed. First, a semiconductor substrate is provided and a gate structure and a spacer surrounding the gate structure are disposed on the semiconductor substrate. A source/drain region is then formed in the semiconductor substrate around the spacer, and a first rapid thermal annealing process is performed to activate the dopants within the source/drain region. An etching process is performed to form a recess around the gate structure and a selective epitaxial growth process is performed to form an epitaxial layer in the recess. A second rapid thermal annealing process is performed to redefine the distribution of the dopants within the source/drain region and repair the damaged bonds of the dopants.
United Microelectronics Corp.
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Shyh-Fann Shu-Yen Tsai-Fu Li-Shian Tzyy-Ming Meng-Yi Wen-Han Cheng-Tung Kun-Hsien
Ting Chan Hsiao Jeng Cheng Wu Hung Huang Lee