Townsend and Townsend and Crew LLP
Enhanced plasma mode and system for plasma immersion ion implantation
 A novel plasma treatment method (800, 814). The method includes forming an rf plasma discharge in a vacuum chamber. The plasma discharge includes an inductive coupling structure, which has a first cusp region at a first end of the structure and a second cusp region at a second end of the structure. In some embodiments, a third cusp region, which is between the first and second cusp regions, can also be included. The first cusp region is provided by a first electro-magnetic source and the second cusp region is provided by a second-electro magnetic source. The first electro-magnetic source and the second electro-magnetic source confines a substantial portion of the rf plasma discharge to a region away from a wall of the vacuum chamber. Accordingly, a plasma discharge is substantially a single ionic species (e.g., H.sub.1 +) can be formed. 
Silicon Genesis Corporation
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Ian S. Michael A. Wei
Roth Bryan Liu