Winkle, PLLC
Tunnel field effect transistor
The present disclosure relates to the field of microelectronic transistor fabrication and, more particularly, to the fabrication of a tunnel field effect transistor having an improved on-current level without a corresponding increasing the off-current level, achieved by the addition of a transition layer between a source and an intrinsic channel of the tunnel field effect transistor.
Intel Corporation
H H
H01L H01L
inventional inventional
Benjamin Marko Niloy Gilbert
Chu-Kung Radosavljevic Mukherjee Dewey