Slater & Matsil, L.L.P.
One transistor and one resistive (1T1R) random access memory (RAM) structure with dual spacers
The present disclosure provides methods of making resistive random access memory (RRAM) cells. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a top portion, a resistive material layer on the bottom electrode having a width that is same as a width of the top portion of the bottom electrode; a capping layer over the bottom electrode, a first spacer surrounding the capping layer and a top electrode, a second spacer surround the top portion of the bottom electrode and the first spacer, and the top electrode. The RRAM cell further includes a conductive material connecting the top electrode of the RRAM structure to a metal layer.
Taiwan Semicnductor Manufacturing Company, Ltd.
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Ching-Pei Chin-Chieh Kuo-Chi Chih-Yang Yu-Wen Wen-Ting Hsia-Wei
Hsieh Yang Tu Chang Liao Chu Chen