Saile Ackerman LLC
Schottky barrier source/drain n-mosfet using ytterbium silicide
A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.
National University of Singapore
H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional additional inventional additional additional additional
Jingde Shiyang Dim-Lee Sungjoo Jagar Chunxiang Ming Fu
Chen Zhu Kwong Lee Singh Zhu Li