Leydig, Voit & Mayer, Ltd.
Method for manufacturing nitride semiconductor device
A method for manufacturing a nitride semiconductor device, includes forming a p-type nitride semiconductor layer on a substrate, from an organic metal compound as a group III element source material, ammonia and a hydrazine derivative as group V element source materials, and a Mg source material gas as a p-type impurity source material. The flow velocity of the source material gases including the group III element source material, the group V element source materials, and the p-type impurity source material is more than 0.2 m/sec.
Mitsubishi Electric Corporation
C H H H C H C C H H
C30B H01L H01L H01L C30B H01L C30B C30B H01S H01L
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Masayoshi Akihito
Takemi Ohno