Harness, Dickey & Pierce, P.L.C.
Graphene-inserted phase change memory device and method of fabricating the same
Provided is a phase change memory device including a graphene layer inserted between a lower electrode into which heat flows and a phase change material layer, to prevent the heat from being diffused to an outside so as to efficiently transfer the heat to the phase change material layer, and a method of fabricating the phase change memory device. The phase change memory device includes a lower electrode; an insulating layer formed to enclose the lower electrode; a graphene layer formed on the lower electrode; a phase change material layer formed on the graphene layer and the insulating layer; and an upper electrode formed on the phase change material layer. Since a phase of the phase change material layer is changed at a small amount of driving current, the phase change memory device is fabricated to have a high driving speed and a high integration.
Samsung Electronics Co., Ltd. The Board of Trustees of the Leland Stanford Junior University
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Yongsung Chiyui H.-S. Philip Scott Aditya Kenneth E. Mehdi Seunghyun Eric Christopher M.
Kim Ahn Wong Fong Sood Goodson Asheghi Lee Pop Neumann