Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device
Described herein is an etching solution comprising water; oxidizer; water-miscible organic solvent; fluoride ion source; and optionally, surfactant. Such compositions are useful for the selective removal of silicon-germanium over poly silicon from a microelectronic device having such material(s) thereon during its manufacture.
VERSUM MATERIALS US, LLC
C H H H H C
C09K H01L H01L H01L H01L C09K
inventional inventional inventional inventional inventional inventional
Yi-Chia Andrew J. Wen Dar
Lee Adamczyk Liu