Alston & Bird LLP
Method for fabricating field emitters by using laser-induced re-crystallization
Methods are provided for fabricating field emitters by using laser-induced re-crystallization. A substrate is first provided on which a silicon-containing layer is formed. A plurality of extrusive tips are thereafter formed to be extruded from the surface of the silicon-containing layer by using laser-induced re-crystallization. The methods of the laser-induced re-crystallization include a step of subjecting the overall or partial silicon-containing layer to an energy source, either unpatterned or patterned.
Industrial Technology Research Institute
H
H01J
inventional
Yu-Cheng
Chen