Rossi & Associates
High withstand voltage semiconductor device
A semiconductor device includes a stable high withstand voltage lateral MISFET device which suppresses a gradual withstand voltage drop under high voltage and humidity conditions. In a MISFET device with a 700V breakdown drain voltage, the length of extension Mc (&mgr;m) of a field plate FP1 from the source side end of a thermal oxidization film, and the total insulating film thickness Tox (&mgr;m) directly below the extending tip of the field plate FP1, are greater than or equal to lower limit values Mcmin, Tcmin. As a result, even if there is growth in charge accumulation at the interface of the mold resin, the field strength at a point B and point C is always lower than at a point A, which suppresses a gradual withstand voltage drop and a gradual ON current drop, whereby it becomes possible to realize a withstand voltage of 700V.
Fuji Electric Co., Ltd.
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Gen Naoto Masaru Akio
Tada Fujishima Saito Kitamura