Harness, Dickey & Pierce, P.L.C.
High electron mobility transistors and methods of fabricating the same
A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the channel forming layer. The source electrode and the drain electrode are located on the channel supplying layer. A channel increase layer is between the channel supplying layer and the source and drain electrodes. A thickness of the channel supplying layer is less than about 15 nm.
Samsung Electronics Co., Ltd.
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Hyuk-soon Ki-ha Jae-joon Jong-seob Jai-kwang In-jun
Choi Hong Oh Kim Shin Hwang