Sughrue Mion, PLLC
Schottky diode with low leakage current and fabrication method thereof
A low leakage Schottky diode and fabrication method thereof. The Schottky diode includes a n-type semiconductor; an anode having a circular periphery formed in a region above the n-type semiconductor; and a cathode formed in a region above the n-type semiconductor and having a pattern surrounding and set apart from the outer periphery of the anode. Because there are no edges at the anode and cathode interface, leakage current is minimized.
Samsung Electronics Co., Ltd.
H
H01L
inventional
Il-jong Young-hoon Dong-sik Hyung Ja-nam
Song Min Shim Choi Ku