IP & T Group LLP
Semiconductor device and method of manufacturing the same
A method of manufacturing a semiconductor device includes forming an interlayer dielectric layer, forming trenches by etching the interlayer dielectric layer, forming a copper (Cu) layer to fill the trenches, and implanting at least one of an inert element, a nonmetallic element, and a metallic element onto a surface of the Cu layer.
Hynix Semiconductor Inc.
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H01L H01L H01L
inventional inventional inventional
Jung Geun Whee Won Eun Soo
Kim Cho Kim