Withrow & Terranova, PLLC
Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin
Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin are disclosed. By the NV-CAM cells employing MTJ differential sensing, differential cell voltages can be generated for match and mismatch conditions in response to search operations. The differential cell voltages are amplified to provide a larger match line voltage differential for match and mismatch conditions, thus providing a larger sense margin between match and mismatch conditions. For example, a cross-coupled transistor sense amplifier employing positive feedback may be employed to amplify the differential cell voltages to provide a larger match line voltage differential for match and mismatch conditions. Providing NV-CAM cells that have a larger sense margin can mitigate sensing issues for increased search operation reliability. One non-limiting example of an NV-CAM cell that employs MTJ differential sensing is a ten (10) transistor (10T)-four (4) MTJ (10T-4MTJ) NV-TCAM cell.
Industry-Academic Cooperation Foundation, Yonsei University QUALCOMM Technologies, Inc.
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G11C G11C G11C
inventional inventional inventional
Jung Pill Byung Kyu Seung Hyuk Seong-Ook Taehui
Kim Song Kang Jung Na