F. Chau & Associates, LLC
Method of fabricating semiconductor device
A method of fabricating a semiconductor device is provided. An etch-target layer is formed on a substrate. A photoresist layer is formed on the etch-target layer. A first exposure process is performed using a first photo mask to form a plurality of first-irradiated patterns in the photoresist layer. The first photo mask includes a plurality of first transmission regions. Each first transmission region has different optical transmittance. A second exposure process is performed using a second photo mask to form a plurality of second-irradiated patterns in the photoresist layer. The second photo mask includes a plurality of second transmission regions. Each second transmission region has different optical transmittance. A photoresist pattern is formed from the photoresist layer by removing the plurality of first-irradiated and second-irradiated patterns from the photoresist layer. A lower structure is formed from the etch-target layer by etching the etch-target layer using the photoresist pattern.
SAMSUNG ELECTRONICS CO., LTD.
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