Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy
Described herein is a FinFET device in which epitaxial layers of semiconductor material are formed in source/drain regions on fin portions. The fin portions can be located within a dielectric layer that is deposited on a semiconductor substrate. Surfaces of the fin portions can be oriented in the {100} lattice plane of the crystalline material of the fin portions, providing for good epitaxial growth. Further described are methods for forming the FinFET device.
Tessera, Inc.
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Juntao Kangguo
Li Cheng