Antonelli, Terry, Stout & Kraus
Process for fabricating heterojunction bipolar transistors
 Microfabrication and large scale integration of a device can be realized by using a planar heterojunction bipolar transistor formed by a process comprising successively growing semiconductor layers serving as a subcollector, a collector, a base, and an emitter, respectively, through epitaxial growth on a compound semiconductor substrate in such a manner that at least one of the emitter junction and collector junction is a heterojunction, wherein a collector drawing-out metal layer is formed by the selective CVD method. 
Hitachi, Ltd.
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Katsuhiko Fumio Masayoshi Hiroshi Tomonori Chushirou Susumu
Mitani Murai Saito Miyazaki Tanoue Kusano Takahashi