Williams Morgan, P.C.
Method, apparatus, and system for improved memory cell design having unidirectional layout using self-aligned double patterning
At least one method, apparatus and system disclosed involves an integrated circuit comprising a unidirectional metal layout. A first set of metal features are formed in a vertical configuration in a first metal layer of a memory cell. A second set of metal features are formed in a unidirectional horizontal configuration in a second metal layer of the memory cell. A third set of metal features are formed in the unidirectional horizontal configuration in a second metal layer of a functional cell for providing routing compatibility between the memory cell and the functional cell. The memory cell is placed adjacent to the functional cell for forming an integrated circuit device.
GLOBALFOUNDRIES INC.
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Mahbub Juhan
Rashed Kim