Scully, Scott, Murphy & Presser
Method of fabricating strained Si SOI wafers
A method of fabricating a strained semiconductor-on-insulator (SSOI) substrate in which the strained semiconductor is a thin semiconductor layer having a thickness of less than 50 nm that is located directly atop an insulator layer of a preformed silicon-on-insulator substrate is provided. Wafer bonding is not employed in forming the SSOI substrate of the present invention.
International Business Machines Corporation
H
H01L
inventional
Huajie Stephen W. Guy M.
Chen Bedell Cohen