Harness, Dickey & Pierce, P.L.C.
Power electronic device and method of manufacturing the same
According to an example embodiment, a power electronic device includes a first semiconductor layer, a second semiconductor layer on a first surface of the first semiconductor layer, and a source, a drain, and a gate on the second semiconductor layer. The source, drain and gate are separate from one another. The power electronic device further includes a 2-dimensional electron gas (2DEG) region at an interface between the first semiconductor layer and the second semiconductor layer, a first insulating layer on the gate and a second insulating layer adjacent to the first insulating layer. The first insulating layer has a first dielectric constant and the second insulating layer has a second dielectric constant less than the first dielectric constant.
Samsung Electronics Co., Ltd.
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In-jun Jai-kwang Jae-joon Ki-ha Hyuk-soon Jong-seob
Hwang Shin Oh Hong Choi Kim