Manufacturing method of semiconductor memory device
A manufacturing method of a semiconductor memory device is provided in the present invention. A cleaning treatment to a storage node contact on a semiconductor substrate is performed, and a metal silicide layer is formed after the cleaning treatment. A gate contact opening penetrating a capping layer of a transistor on the semiconductor substrate is formed after the step of forming the metal silicide layer for exposing a gate structure of the transistor. By the manufacturing method of the semiconductor memory device in the present invention, the gate structure of the transistor may be kept from being influenced and/or damaged by the cleaning treatment of the storage node contact, and the electrical performance of the transistor may be ensured accordingly.
Fujian Jinhua Integrated Circuit Co., Ltd. UNITED MICROELECTRONICS CORP.
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Feng-Yi Chien-Ting Shih-Fang Fu-Che
Chang Ho Tzou Lee