JCIPRNET
Fin field effect transistor and method for fabricating the same
A method of fabricating a FinFET includes at last the following steps. A <551> direction is determined by tilting 8.05±2 degrees from a normal vector of a (110) lattice plane of a semiconductor substrate. The semiconductor substrate is patterned along a lattice plane perpendicular to the <551> direction, so as to form a plurality of trenches in the semiconductor substrate and at least one semiconductor fin having sidewalls disposed on a (551) lattice plane. Insulators are in the trenches. A gate stack is formed over portions of the semiconductor fin and over portions of the insulators. Strained material portions are formed over the semiconductor fins revealed by the gate stack.
Taiwan Semiconductor Manufacturing Co., Ltd.
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inventional inventional inventional inventional additional inventional inventional
Hung Pin Ru-Shang Chii-Ming Sen-Hong Chi-Cherng
Chen Hsiao Wu Syue Jeng