Birch, Stewart, Kolasch & Birch LLP
Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes forming a semiconductor fin on a substrate. A dummy gate structure is formed crossing the semiconductor fin. The dummy gate structure is replaced with a metal gate structure. An epitaxial structure is formed in the semiconductor fin after replacing the dummy gate structure with the metal gate structure.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chih-Hao Wai-Yi Yu-Ming Jia-Chuan Chia-Hao Gwan-Sin Ching
Wang Lien Lin You Chang Chang Hsueh