NSIP Law
Spin-orbit torque magnetic memory device using alternating current
A magnetic memory according to one embodiment of the present invention comprises: a magnetic tunnel junction comprising a free layer, a reference layer, and a tunnel barrier layer disposed between the free layer and the reference layer; a first conductive line disposed adjacent to the free layer; and a second conductive line disposed adjacent to the free layer and intersecting the first conductive line. A magnetization switching method of the magnetic memory comprises the steps of: applying an alternating current-type first current having a first frequency to the first conductive line; and applying an alternating current-type second current having the first frequency to the second conductive line. The free layer performs magnetization reversal, using the first current and the second current, and the magnetic tunnel junction is disposed on an intersection point between the first conductive line and the second conductive line.
Korea University Research and Business Foundation
G G H H H G H H H G H H
G11C G11C H01L H01F H01F G11C H01L H01L H01F G11C H01F H01L
inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional
Kyung-Jin Seung-Jae Gyungchoon
Lee Lee Go