Volentine & Whitt, PLLC
Resistive memory device and method of writing data using multi-mode switching current
A method of writing data in a resistive memory device includes performing a test operation to distinguish normal memory cells from weak memory cells, during a write operation directed to normal memory cells using a write current and during a weak write operation directed to weak memory cells using a higher write current.
Samsung Electronics Co., Ltd.
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additional additional inventional
Jin-Hyun Hyun-Ho Oh-Seong
Kim Choi Kwon