Muir Patent Consulting, PLLC
Method of forming semiconductor device having a capacitor
A method of forming a semiconductor device includes forming a lower electrode layer on a substrate, forming a surface oxide layer on the lower electrode layer, partially removing the lower electrode layer to form a lower electrode, removing the surface oxide layer to expose the lower electrode, forming a capacitor dielectric layer on the lower electrode, and forming an upper electrode on the capacitor dielectric layer.
Samsung Electronics Co., Ltd.
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inventional inventional inventional
Seok-Woo Kyoung-Ryul Young-Jin Jung-Hee Seung-Sik Han-Jin
Nam Yoon Kim Chung Chung Lim