Lateral stack-type super junction power semiconductor device
A lateral stack-type super junction power semiconductor device includes a semiconductor substrate; an epitaxial stack structure on the semiconductor substrate, having a first epitaxial layer and a second epitaxial layer; a drain structure embedded in the epitaxial stack structure and extending along a first direction; a plurality of gate structures embedded in the epitaxial stack structure and arranged in a segmental manner along the first direction; a source structure between the plurality of gate structures; and an ion well encompassing the source structure.
Anpec Electronics Corporation
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Shou-Yi Meng-Wei Chia-Hao Yung-Fa
Hsu Wu Chang Lin