Patterson + Sheridan LLP
Device conformity control by low temperature, low pressure, inductively coupled ammonia-nitrogen trifluoride plasma
The present disclosure generally relates to methods of removing oxides and oxide-containing layers from the surfaces of substrates. In one aspect, a method of processing a substrate comprises positioning a substrate in a process chamber, the substrate having an oxide layer thereon; introducing one or more process gases to an interior of the process chamber; ionizing the one or more process gases; exposing the oxide layer to the one or more ionized process gases, wherein the process chamber is maintained at a pressure less than about 50 mTorr during the exposing, and the substrate is maintained at a temperature within a range of about zero degrees Celsius to about 30 degrees Celsius during the exposing; and removing the oxide layer from the surface of the substrate.
APPLIED MATERIALS, INC.
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H01L H01L
inventional inventional
Avgerinos V. Teng-fang Shi Wei Ping Han
Gelatos Kuo Toh Hsieh