Myers Bigel Sibley & Sajovec, P.A.
HDP/PECVD methods of fabricating stress nitride structures for field effect transistors
A stress nitride structure is formed on an integrated circuit field effect transistor by high density plasma (HDP) depositing a first stress nitride layer on the integrated circuit field effect transistor and then plasma enhanced chemical vapor depositing (PECVD) a second stress nitride layer on the first stress nitride layer. The first stress nitride layer is non-conformal and the second stress nitride layer is conformal. Related structures also are described.
Samsung Electronics Co., Ltd. International Business Machines Corporation
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Daewon Jae-eun Junjung Ja-hum
Yang Park Kim Ku