Roberts Calderon Safran & Cole, P.C.
Chamfered replacement gate structures
The present disclosure relates to semiconductor structures and, more particularly, to chamfered replacement gate structures and methods of manufacture. The structure includes: a recessed gate dielectric material in a trench structure; a plurality of recessed workfunction materials within the trench structure on the recessed gate dielectric material; a plurality of additional workfunction materials within the trench structure and located above the recessed gate dielectric material and the plurality of recessed workfunction materials; a gate metal within the trench structure and over the plurality of additional workfunction materials, the gate metal and the plurality of additional workfunction materials having a planar surface below a top surface of the trench structure; and a capping material over the gate metal and the plurality of additional workfunction materials.
GLOBALFOUNDRIES INC.
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Guowei Scott Ruilong Hui Chih-Chiang Rongtao Haiting
Xu Beasor Xie Zang Chang Lu Wang