Tutunjian & Bitetto, P.C.
Fin isolation on a bulk wafer
A method for forming a semiconductor device includes etching first fins into a bulk semiconductor substrate and exposing a portion of the first fins through a first dielectric layer formed over the first fins. A first film is deposited over the first fins in a region for n-type devices. and a second film is deposited over the first fins in a region for p-type devices. The first film and the second film are etched to form second fins in the regions for n-type devices and for the region for p-type devices. The second fins are protected. The first fins are removed from the first dielectric layer to form an isolation layer separating the second fins from the substrate.
International Business Machines Corporation
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additional inventional inventional
Hong Juntao Junli Chih-Chao
He Li Wang Yang