Maschoff Brennan
Semiconductor device with self-protecting fuse and method of fabricating the same
A semiconductor device with the metal fuse and a fabricating method thereof are provided. The metal fuse connects an electronic component (e.g., a transistor) and a existing dummy feature which is grounded. The protection of the metal fuse can be designed to start at the beginning of the metallization formation processes. The grounded dummy feature provides a path for the plasma charging to the ground during the entire back end of the line process. The metal fuse is a process level protection as opposed to the diode, which is a circuit level protection. As a process level protection, the metal fuse protects subsequently-formed circuitry. In addition, no additional active area is required for the metal fuse in the chip other than internal dummy patterns that are already implemented.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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additional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Han-Wei Ying-Chieh Che-Chia Kang-Min Chen-Chung Bor-Zen Chin-Chia Gwo-Chyuan Yi-Ruei Yen-Ming
Yang Liao Hsu Kuo Lai Tien Chang Kuoh Lin Peng