Green, Howard & Mughal LLP
Methods and apparatus to form GaN-based transistors during back-end-of-the-line processing
Methods and apparatus to form GaN-based transistors during back-end-of-line processing are disclosed. An example integrated circuit includes a first transistor formed on a first semiconductor substrate. The example integrated circuit includes a dielectric material formed on the first semiconductor substrate. The dielectric material extends over the first transistor. The example integrated circuit further includes a second semiconductor substrate formed on the dielectric material. The example integrated circuit also includes a second transistor formed on the second semiconductor substrate.
Intel Corporation
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Han Wui Marko Sansaptak
Then Radosavljevic Dasgupta