Amerson Law Firm, PLLC
Methods and structures for eliminating or reducing line end epi material growth on gate structures
One method disclosed herein includes, among other things, forming a line-end protection layer in an opening on an entirety of each opposing, spaced-apart first and second end face surfaces of first and second spaced-apart gate electrode structures, respectively, and forming a sidewall spacer adjacent opposing sidewall surfaces of each of the gate electrode structures but not adjacent the opposing first and second end face surfaces having the line-end protection layer positioned thereon.
GLOBALFOUNDRIES Inc. International Business Machines Corporation
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Juntao Ruilong Shom
Li Xie Ponoth