Cesari and McKenna, LLP
Spin orbit torque magnetic random access memory structures and methods for fabrication
In one example embodiment, a SOT-MRAM includes a storage unit having a CoαXβPtγ based free layer. The storage unit includes a bottom electrode and the CoαXβPtγ based free layer is disposed over the bottom electrode. Further, the storage unit includes a tunnel barrier layer over the CoαXβPtγ based free layer, and a fixed layer over the tunnel barrier layer. The CoαXβPtγ based free layer, tunnel barrier layer and fixed layer form a magnetic tunnel junction. The storage unit may also include a top electrode over the MTJ.
National University of Singapore
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Liang Jinyu Jingsheng
Liu Deng Chen