Method of making N-type thin film transistor
A method of making N-type semiconductor layer includes following steps. An insulating substrate is provided. An MgO layer is deposited on the insulating substrate. A first dielectric layer is formed by acidizing the MgO layer. A semiconductor carbon nanotube layer is formed to cover the MgO layer. A source electrode and drain electrode are formed to be electrically connected to the semiconductor carbon nanotube layer. A second dielectric layer is applied on the semiconductor carbon nanotube layer. A gate electrode is formed on the second dielectric layer.
HON HAI PRECISION INDUSTRY CO., LTD. Tsinghua University
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Yuan-Hao Guan-Hong Shou-Shan Qun-Qing
Jin Li Fan Li