Oblon, McClelland, Maier & Neustadt, L.L.P.
Plurality of semiconductor devices in resin with a via
According to an embodiment, a semiconductor device comprises an insulative resin, an interconnect, a plurality of semiconductor elements, a first conductive unit, a first connector, and a first metal layer. The insulative resin includes a first region and a second region. At least a portion of the interconnect is arranged with at least a portion of the first region in a first direction. The first conductive unit pierces the second region in the first direction. At least a portion of the first connector is arranged with at least a portion of the first conductive unit in the first direction. At least a portion of the first connector is arranged with at least a portion of the interconnect in a second direction intersecting the first direction. The first metal layer is provided between the first conductive unit and the first connector. The first metal layer contacts the insulative resin.
Kabushiki Kaisha Toshiba
H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional additional additional inventional inventional additional inventional additional inventional additional inventional additional inventional inventional inventional additional additional additional inventional inventional additional inventional additional inventional additional additional inventional additional inventional inventional inventional
Yutaka Hiroshi Nobuto
Onozuka Yamada Managaki