Slater Matsil, LLP
Metal gate fill for short-channel and long-channel semiconductor devices
Certain embodiments of a semiconductor device and a method of forming a semiconductor device comprise forming a high-k gate dielectric layer over a short channel semiconductor fin. A work function metal layer is formed over the high-k gate dielectric layer. A seamless metal fill layer is conformally formed over the work function metal layer.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chung-Yi Chung-Chiang Tai-Wei Da-Yuan Shih-Hang Ching-Hwanq Kuan-Ting Ji-Cheng
Su Wu Hwang Lee Chiu Su Liu Chen