Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device includes the steps of first forming a first trench and a second trench in a substrate and then forming a shallow trench isolation (STI) in the first trench, in which the STI comprises a top portion and a bottom portion and a top surface of the top portion is even with or higher than a bottom surface of the second trench. Next, a conductive layer is formed in the first trench and the second trench to form a first gate structure and a second gate structure.
UNITED MICROELECTRONICS CORP. Fujian Jinhua Integrated Circuit Co., Ltd.
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Chien-Ting Shih-Fang Li-Wei
Ho Tzou Feng