Cantor Colburn LLP
Metal reflow for middle of line contacts
A method of forming a contact in a semiconductor device includes forming a first gate and a second gate on a substrate; removing an interlayer dielectric (ILD) material arranged between the first gate and the second gate to form a trench that extends from a surface of the first gate and a surface of the second gate to the substrate; depositing a liner along a sidewall of the trench and an endwall of the trench in contact with the substrate; depositing by a physical vapor deposition method (PVD) a layer of metal on a surface of the first gate and a surface of the second gate; and heating to reflow metal from the layer of metal on the surface of the first gate and the second gate into the trench and form the contact.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Chih-Chao Juntao Junli
Yang Li Wang