Molecular-beam epitaxy system and method including hydrogen treatment
 A system and method including the use of hydrogen in the molecular beam evaporation process for epitaxy growth, such as in the formation of GaAs and GaAlAs and Sn for n-type dopant impurity. In a molecular beam epitaxy system, a hydrogen beam introduced and, along with the molecular beam, is directed on the substrate during the epitaxy growth such that the presence of the relatively small volume of hydrogen influences the physical surface properties of the epitaxially grown material and therefore the quality of the epitaxy. 
International Business Machines Corporation
C Y Y C C Y
C30B Y10S Y10S C30B C30B Y10S
inventional additional additional inventional inventional additional
Leroy L. Chin-An Leo
Chang Chang Esaki