William Park & Associates Ltd.
Semiconductor memory device having pads of varying widths
Provided herein is a semiconductor memory device. The semiconductor memory device may include channel layers protruding away from a substrate. The semiconductor memory device may include a plurality of pads respectively coupled to the channel layers. The widths of the pads may or may not be increased depending on a bending of the channel layers.
SK hynix Inc.
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Yung Jun
Kim