Talem IP Law, LLP
Perpendicular magnetic tunnel junction devices with high thermal stability
A perpendicular magnetic tunnel junction device (pMTJ) is provided that has a structure of a first heavy metal layer, a first thin dusting layer on the first heavy metal layer, a first CoFeB layer on the thin dusting layer, a MgO barrier layer on the first CoFeB layer, a second CoFeB layer on the MgO barrier layer, a second thin dusting layer on the CoFeB layer; and a second heavy metal layer on the thin dusting layer. The insertion of the thin dusting layer improves thermal stability of the pMTJ structure.
THE ARIZONA BOARD OF REGENTS ON BEHALF OF THE UNIVERSITY OF ARIZONA
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Weigang Hamid
Wang Almasi