Transfer method for non-critical photoresist patterns
 A method of direct transfer printing of a photoresist pattern layer onto the first pattern layer of a phase shift photomask reticle is described which allows completion of the photomask pattern at a much lower cost than the conventional multiple-pass photolithographic process. The direct transfer of the resist pattern from printing plate to mask surface by means of a platen is especially suitable for non-critical regions such as border regions, seal bands, identification marks, and the like. 
Taiwan Semiconductor Manufacturing Company, Ltd.
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Yung-Dar
Chen