Myers Bigel Sibley & Sajovec, P.A.
Semiconductor devices having gate structures with conductive patterns of different widths and methods of fabricating such devices
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a first dielectric pattern, a data storage pattern and a second dielectric pattern, which are sequentially stacked on a semiconductor substrate. A first conductive pattern is provided on the second dielectric pattern. A second conductive pattern having a greater width than the first conductive pattern is provided on the first conductive pattern.
Samsung Electronics Co., Ltd.
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Jung-Dal Chang-Seok Sung-Il Young-Woo Ju-Hyung
Choi Kang Chang Park Kim