MH2 Technology Law Group LLP
Selective nanoscale growth of lattice mismatched materials
Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.
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Seung-Chang Steven R. J.
Lee Brueck