Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Nonvolatile semiconductor memory and manufacturing method for the same
A semiconductor memory encompasses a memory cell matrix, which embraces device isolation films running along the column-direction, arranged alternatively between the cell columns; first conductive layers having top surfaces lower than the device isolation films; inter-electrode dielectrics arranged on the corresponding first conductive layers, the inter-electrode dielectric has a dielectric constant larger than that of silicon oxide; and second conductive layers running along the row-direction, each of the second conductive layers arranged on the inter-electrode dielectric and the device isolation films so that the second conductive layer can be shared by the memory cell transistors arranged along the row-direction belonging to different cell columns.
Kabushiki Kaisha Toshiba
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inventional inventional inventional
Masayuki Yoshio Atsuhiro Ichiro Hiroki
Tanaka Ozawa Sato Mizushima Yamashita