Oliff & Berridge, PLC
Resist underlayer film-forming composition, process for forming resist underlayer film and patterning process
There is disclosed a resist underlayer film-forming composition comprising, at least: a resin (A) obtained by condensing a compound represented by the following general formula (1) with a compound represented by the following general formula (2) by the aid of an acid catalyst; a compound (B) represented by the general formula (1); a fullerene compound (C); and an organic solvent. There can be a resist underlayer film composition in a multi-layer resist film to be used in lithography, which underlayer film is excellent in property for filling up a height difference of a substrate, possesses a solvent resistance, and is not only capable of preventing occurrence of twisting during etching of a substrate, but also capable of providing an excellently decreased pattern roughness; a process for forming a resist underlayer film by using the composition; and a patterning process.
Shin-Etsu Chemical Co., Ltd.
G G C H C H H H B
G03F G03F C08G H01L C08G H01L H01L H01L B82Y
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Katsuya Takeshi Tsutomu Daisuke Toshihiko Takeru
Takemura Kinsho Ogihara Kori Fujii Watanabe