Marshall Gerstein & Borun LLP
Method for forming wall oxide layer and isolation layer in flash memory device
Disclosed herein are methods for forming wall oxide films in flash memory devices and methods for forming isolation films. After trenches are formed in the substrate, an ISSG (In-Situ Steam Generation) oxidization process is performed to form wall oxide films on sidewalls of the trenches. This process prohibits formation of facets at the top and bottom edge portions of the trenches. Thus, the top edges of the trenches are rounded. Furthermore, the ISSG oxidization process is performed at a low temperature for a relatively short time. Therefore, thermal stress due to carrying out an oxidization process for a long time is reduced and a dislocation phenomenon is thus prevented from occurring.
Hynix Semiconductor Inc.
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Seung Cheol
Lee