Metal interconnect structure and method for fabricating the same
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first inter-metal dielectric (IMD) layer thereon; forming a first metal interconnection and a second metal interconnection in the first IMD layer; removing part of the first IMD layer to form a recess between the first metal interconnection and the second metal interconnection; performing a curing process; and forming a second IMD layer on the first metal interconnection and the second metal interconnection.
UNITED MICROELECTRONICS CORP.
H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Shih-Hsien Chih-Sheng Meng-Jun Ting-Chun
Chen Chang Wang Wang