Sterne, Kessler, Goldstein & Fox P.L.L.C.
Structure and method for testing three-dimensional memory device
Embodiments of methods for testing three-dimensional memory devices are disclosed. The method can include: applying an input signal to a first conductive pad of the memory device by a first probe of a probe card; transmitting the input signal through the first conductive pad, a first TAC, a first interconnect structure passing through a bonding interface of the memory device, at least one of a memory array contact and a test circuit to a test structure; receiving an output signal through a second interconnect structure passing through the bonding interface, a second TAC, at least one of the memory array contact and the test circuit from the test structure; measuring the output signal from a second conductive pad of the memory device by a second probe of the probe card; and determining a characteristic of the test structure based on the input signal and the output signal.
Yangtze Memory Technologies Co., Ltd.
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Lidong Simon Shi-Ning Jong Jun Steve Weiyi Zhenyu Jong Seuk Yongna Youn Cheul Feng
Song Yang Kim Yang Lu Lee Li Kim Pan