Cantor Colburn LLP
Sidewall image transfer structures
A semiconductor device comprises a source/drain region arranged on a substrate and a first gate stack having a first length arranged on a first channel region of the substrate. A second gate stack having a second length is arranged on a second channel region of the substrate. The first length is greater than the second length.
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Juntao Kangguo Xin Zhenxing
Li Cheng Miao Bi