RRAM structure with only part of variable resistive layer covering bottom electrode and method of fabricating the same
An RRAM structure includes a substrate. The substrate is divided into a memory cell region and a logic device region. A metal plug is disposed within the memory cell region. An RRAM is disposed on and contacts the metal plug. The RRAM includes a top electrode, a variable resistive layer, and a bottom electrode. The variable resistive layer is disposed between the top electrode and the bottom electrode. The variable resistive layer includes a first bottom surface. The bottom electrode includes a first top surface. The first bottom surface and the first top surface are coplanar. The first bottom surface only overlaps and contacts part of the first top surface.
UNITED MICROELECTRONICS CORP.
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Chuan-Fu Wen-Jen Chun-Hung
Wang Wang Cheng