Slater & Matsil, L.L.P.
Semiconductor devices having guard ring structure and methods of manufacture thereof
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a first functional region of an integrated circuit over a workpiece, and forming a second functional region of the integrated circuit over the workpiece. The method includes forming a guard ring around the first functional region of the integrated circuit. The guard ring is formed in a material layer disposed over the first functional region and the second functional region.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Nien-Fang Hung-Yi Hsien-Wei Jie Ying-Ju Tsung-Yuan
Wu Kuo Chen Chen Chen Yu