Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Semiconductor device and method of fabricating the same
A high-resistance substrate with good RF characteristics, which has an interstitial oxygen concentration ([Oi]) of 8E17 cm&#8722;3 or less, an oxygen precipitate density ([BMD]) of 1E8 cm&#8722;3 or more, and a substrate resistivity of 500 &OHgr;&middot;cm or more is used. A heat-treating step of the device process is performed for 25 hrs or less as a value calculated assuming that the temperature is 1,000&deg; C. This suppresses a decrease in the resistance of the substrate, prevents crystal defects such as slip, and improves the yield.
Kabushiki Kaisha Toshiba
H H
H01L H01L
inventional inventional
Hiroaki Osamu
Yamada Fujii