Etchback method for forming microelectronic layer with enhanced surface smoothness
 A method for forming a microelectronic layer within a microelectronic fabrication first employs a substrate. There is then formed over the substrate a target microelectronic layer. There is then formed upon the target microelectronic layer a sacrificial smoothing layer. Finally, there is then etched the sacrificial smoothing layer completely from the target microelectronic layer while partially etching the target microelectronic layer to form a partially etched target microelectronic layer with an enhanced surface smoothness in comparison with the target microelectronic layer. 
Taiwan Semiconductor Manufacturing Company
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Chung-Long Syun-Ming Chen-Hua Shwangming
Chang Jang Yu Jeng