Blakely, Sokoloff, Taylor & Zafman LLP
Quantum well transistors with remote counter doping
A quantum well device and a method for manufacturing the same are disclosed. In an embodiment, a quantum well structure comprises a quantum well region overlying a substrate and a remote counter doping comprising dopants of conductivity opposite to the conductivity of the charge carriers of the quantum well region. The remote counter doping is incorporated in a vicinity of the quantum well region for exchange mobile carriers with the quantum well channel, reducing the off-state leakage current. In another embodiment, a quantum well device comprises a quantum well structure including a remote counter doping, a gate region overlying a portion of the quantum well structure, and a source and drain region adjacent to the gate region. The quantum well device can also comprise a remote delta doping comprising dopants of the same conductivity as the quantum well channel.
Intel Corporation
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inventional inventional inventional inventional
Niloy Marko Ravi Gilbert
Mukherjee Radosavljevic Pillarisetty Dewey