Method of forming semiconductor device
A method for forming a semiconductor device is provided. First, a dielectric layer is provided on a substrate, wherein a first recess and a second recess are formed in the dielectric layer. After a mask layer is filled into the first recess and the second recess, the mask layer in the second recess is removed away, thereby forming a patterned mask layer. Subsequently, a nitride treatment is performed to remove unwanted residue of the mask layer in the second recess.
UNITED MICROELECTRONICS CORP.
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inventional additional inventional inventional
Fu-Yu Wei-Hsin Han-Sheng
Tsai Liu Huang