Nixon Peabody LLP
Semiconductor device and method for measuring current of semiconductor device
A semiconductor device in which a transistor has the characteristic of low off-state current is provided. The transistor comprises an oxide semiconductor layer having a channel region whose channel width is smaller than 70 nm. A temporal change in off-state current of the transistor over time can be represented by Formula (a2). In Formula (a2), IOFF represents the off-state current, t represents time during which the transistor is off, α and τ are constants, β is a constant that satisfies 0<β≤1, and CS is a constant that represents load capacitance of a source or a drain.
Semiconductor Energy Laboratory Co., Ltd.
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Masashi Shunpei Kazuaki Hidetomo Toshihiko Masashi
Fujita Yamazaki Ohshima Kobayashi Takeuchi Tsubuku