Myers Bigel Sibley & Sajovec
Method of forming multilayer titanium nitride film by multiple step chemical vapor deposition process and method of manufacturing semiconductor device using the same
 A method of forming a multilayer titanium nitride film hardly containing any Cl component by a multiple step chemical vapor deposition method, and a method of manufacturing a semiconductor device using the same are provided. In the present invention, a multilayer TiN film is formed by multiple step chemical vapor deposition (CVD) on a semiconductor substrate on which an underlayer is formed. In order to form the multilayer TiN film, an underlayer protective TiN film is formed by forming a first TiN film on the underlayer and NH.sub.3 annealing the first TiN film. A main TiN film is formed by forming a second TiN film on the underlayer protective TiN film and NH.sub.3 annealing the second TiN film. A source gas used in order to form the first TiN film has a smaller TiCl.sub.4 to NH.sub.3 gas flow ratio than a source gas for forming the second TiN film. In order to apply the multilayer TiN film to the fabrication of the semiconductor device, an insulating film having a contact hole is formed on a semiconductor substrate. A Ti film is formed on the inner wall of the contact hole. A multilayer TiN film is formed on the Ti film by the multiple step CVD method. A metal plug is formed on the multilayer TiN film. 
Samsung Electronics Co., Inc.
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inventional inventional inventional inventional
Ju-hyuck Jang-eun Tae-wook
Chung Lee Seo