Morrison & Foerster LLP
Nitride semiconductor device comprising bonded substrate and fabrication method of the same
A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.
Nichia Corporation
H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional additional additional additional additional additional additional inventional additional additional inventional additional additional additional
Daisuke Keiji Masashi Masahiko Shinichi Tomoya
Morita Sakamoto Yamamoto Sano Nagahama Yanamoto