MEMS device integrated with a semiconductor integrated circuit and manufacturing method thereof
A semiconductor device includes a semiconductor substrate comprising a MOS transistor. A MEMS device is integrally constructed above the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.
UNITED MICROELECTRONICS CORP.
H B H B B B B B B B B H B H H B B B B
H04R B81B H04R B81C B81B B81C B81B B81B B81C B81C B81B H04R B81B H04R H04R B81C B81B B81B B81C
inventional additional inventional additional additional additional additional additional inventional additional inventional inventional additional inventional additional additional additional additional additional
Chin-Tsai Tsong-Lin Chien-Chung Yu-Chih Min-Hung Sheng-Wei Chih-Cheng
Chang Shen Su Chuang Wang Hung Wang