Method of forming a semiconductor structure
A method of forming a semiconductor structure includes providing a material layer having a recess formed therein. A first tungsten metal layer is formed at a first temperature and fills the recess. An anneal process at a second temperature is then performed, wherein the second temperature is higher than the first temperature.
UNITED MICROELECTRONICS CORP. Fujian Jinhua Integrated Circuit Co., Ltd.
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Tzu-Chieh Tsun-Min Chih-Chieh Kai-Jiun Yi-An Yi-Wei Chia-Chen Wei-Hsin Pin-Hong
Chen Cheng Tsai Chang Huang Chen Wu Liu Chen