Dugan & Dugan, PC
Use of Cl2 and/or HCl during silicon epitaxial film formation
In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.
Applied Materials, Inc.
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Jinsong Ali Arkadii V. Zhiyuan Yihwan Xiao Xiaowei Nicholas C.
Tang Zojaji Samoilov Ye Kim Chen Li Dalida