Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Solid-state imaging device and method of manufacturing the same
An n/p−/p+ substrate where a p−-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p−-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p−-type epitaxial layer from the substrate surface.
Kabushiki Kaisha Toshiba
H
H01L
inventional
Hiroshige Ikuko Hirofumi Nagataka Tetsuya Hisanori
Goto Inoue Yamashita Tanaka Yamaguchi Ihara