Oliff PLC
Composition for resist underlayer film, process for forming resist underlayer film, patterning process, and fullerene derivative
The invention provides a composition for a resist underlayer film, the composition for a resist underlayer film to form a resist underlayer film of a multilayer resist film used in lithography, wherein the composition comprises at least (A) a fullerene derivative that is a reaction product of a substance having a fullerene skeleton with a 1,3-diene compound derivative having an electron-withdrawing group and (B) an organic solvent. There can be a composition for a resist underlayer film for a multilayer resist film used in lithography, the composition giving a resist underlayer film having excellent high dry etching resistance, capable of suppressing wiggling during substrate etching with high effectiveness, and capable of avoiding a poisoning problem in upperlayer patterning that uses a chemical amplification resist; a process for forming a resist underlayer film; a patterning process; and a fullerene derivative.
SHIN-ETSU CHEMICAL CO., LTD.
C C H G H H
C07C C07C H01L G03F H01L H01L
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Takeshi Takeru Toshihiko Tsutomu
Kinsho Watanabe Fujii Ogihara