Anova Law Group, PLLC
FinFET device and fabrication method thereof
A FinFET device and fabrication method thereof is provided. The fabrication method include: providing a semiconductor substrate with a fin protruding from the semiconductor substrate, and a gate structure across a length portion of the fin and covering a portion of the fin; etching a partial thickness of the fin on both sides of the gate structure to form grooves; forming a doped layer in a bottom and sidewalls of the grooves; annealing the doped layer to allow the doping ions to diffuse into the fin and to form a lightly doped source/drain region; removing the doped layer after the annealing; and forming epitaxial layers to fill up the grooves.
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
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Yong
Li