WPAT, P.C. Intellectual Property Attorneys
Method of manufacturing a back side illuminated (BSI) image sensor
Some embodiments of the present disclosure provide a method of manufacturing a back side illuminated (BSI) image sensor. The method includes receiving a semiconductive substrate; forming a transistor coupled to a photosensitive element at a front side of the semiconductive substrate; forming a deep trench isolation (DTI) at a back side of the semiconductive substrate; forming a doped layer conformally over the DTI; performing a microwave anneal over the back side; forming a non-transparent material inside the DTI; and forming a color filter over the doped layer.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Kuo-Cheng Yung-Lung Chun-Hao Tsung-Han Yun-Wei
Lee Hsu Chou Tsai Cheng