Process for integrating a MOSFET device, using silicon nitride spacers and a self-aligned contact structure, with a capacitor structure
 A semiconductor fabrication process, allowing integration of MOSFET devices, and capacitor structures, on a single semiconductor chip, has been developed. The process integration features the use of a MOSFET device, fabricated using a self-aligned contact structure, allowing a reduction in the source and drain area needed for contact. Silicon nitride spacers, used on the sides of the polysilicon gate electrode, protect the polysilicon gate structure, during the opening of a self-aligned contact hole. 
Taiwan Semiconductor Manufacturing Company Ltd.
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H01L H01L
inventional inventional
Jenn Chen Cheng
Tsao Chou