Slater Matsil, LLP
Biased backside illuminated sensor shield structure
Presented herein is a device comprising an image sensor having a plurality of pixels disposed in a substrate and configured to sense light through a back side of the substrate and an RDL disposed on a front side of the substrate and having a plurality of conductive elements disposed in one or more dielectric layers. A sensor shield is disposed over the back side of the substrate and extending over the image sensor. At least one via contacts the sensor shield and extends from the sensor shield through at least a portion of the RDL and contacts at least one of the plurality of conductive elements.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Dun-Nian Jhy-Jyi Shyh-Fann Feng-Chi Ching-Chun
Yaung Sze Ting Hung Wang