Silicon trench etch using silicon-containing precursors to reduce or avoid mask erosion
The present invention pertains to an etch chemistry and method useful for the etching of silicon surfaces. The method is particularly useful in the deep trench etching of silicon where profile control is important. In the case of deep trench etching, at least a portion of the substrate toward the bottom of the trench is etched using a combination of reactive gases including a fluorine-containing compound which does not contain silicon (FC); a silicon-containing compound (SC) which does not contain fluorine; and oxygen (O2).
Applied Materials, Inc.
H
H01L
inventional
Anisul Wei Dragan Shaoher Maocheng Yiqiong
Khan Liu Podlesnik Pan Li Wang