Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Semiconductor memory device having ferroelectric capacitor and method of manufacturing the same
A semiconductor memory device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate and including a first gate electrode and first and second diffusion layers, a first contact connected to the first diffusion layer, a first conductive oxygen barrier film electrically connected to the first contact and covering at least the upper surface of the first contact, a first ferroelectric capacitor including a first electrode, a second electrode, and a first ferroelectric film interposed between the first and second electrodes, and a first connecting member connected to the first electrode and to the first conductive oxygen barrier film.
Kabushiki Kaisha Toshiba
H H
H01L H01L
inventional inventional
Hiroyuki Yoshinori Iwao Shinichi Tohru
Kanaya Kumura Kunishima Watanabe Ozaki