Ladas & Parry LLP
Method of manufacturing nano size-gap electrode device
Provided is a method of manufacturing a nano size-gap electrode device. The method includes the steps of: disposing a floated nano structure on a semiconductor layer; forming a mask layer having at least one opening pattern to intersect the nano structure; and depositing a metal on the semiconductor layer exposed through the opening pattern to form an electrode, such that a nano size-gap is provided under the nano structure by the nano structure.
Electronics and Telecommunications Research Institute
B H H H
B82Y H01L H01L H01L
inventional inventional additional inventional
Ung Hwan Han Young Sung Yool Chan Woo Ki Ju Seong Jae In Bok Chang Geun Jong Heon Min Ki
Pi Yu Choi Park Im Lee Baek Ahn Yang Ryu