Myers Bigel Sibley & Sajovec, P.A.
Methods of forming semiconductor patterns including reduced dislocation defects and devices formed using such methods
Methods of forming semiconductor patterns including reduced dislocation defects and devices formed using such methods are provided. The methods may include forming an oxide layer on a substrate and forming a recess in the oxide layer and the substrate. The methods may further include forming an epitaxially grown semiconductor pattern in the recess that contacts a sidewall of the substrate at an interface between the oxide layer and the substrate and defines an upper surface of a void in the recess in the substrate.
Samsung Electronics Co., Ltd.
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Robert C. Wei-E Mark S.
Bowen Wang Rodder