Brinks Hofer Gilson & Lione
Tunneling magnetic sensing element and method for manufacturing the same
A tunneling magnetic sensing element includes: a pinned magnetic layer whose direction of magnetization is pinned in one direction; an insulating barrier layer; and a free magnetic layer whose direction of magnetization changes in response to an external magnetic field. The pinned magnetic layer, the insulating barrier layer and the free magnetic layer are deposited in the named order. A first protective layer composed of a platinum-group element is disposed on the free magnetic layer, and a second protective layer composed of Ti is disposed on the first protective layer.
TDK Corporation
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G01R B82Y B82Y G11B H01L G11B H01L G11B G01R G11B G11B
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Masamichi Yoshihiro Kazumasa Naoya Hidekazu
Saito Nishiyama Nishimura Hasegawa Kobayashi