Slater & Matsil, L.L.P.
Barrier layer for copper interconnect
A device and a method of forming the device is provided. The device includes a dielectric layer overlying a substrate, a conductive line with a sidewall in the dielectric layer, a Ta layer adjoining the sidewall of the conductive line, and a metal oxide formed between the Ta layer and the dielectric layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Yu-Min Yu-Chang Kuei-Pin Chen-Kuang Yu-Hung Yao Hsiang Chi-Yu
Chang Hsiao Lee Lien Lin Liang Chou