Sterne, Kessler, Goldstein & Fox P.L.L.C.
Interconnect structure without barrier layer on bottom surface of via
Embodiments and methods of an interconnect structure are provided. The interconnect structure includes a via, a trench that has an overlapping area with a top of the via, and a first layer of conducting material that has an overlapping area with a bottom of the via. The interconnect also includes a second layer of conducting material formed in the via, and a third layer of conducting material formed in the trench. The second layer of conducting material is in contact with the first layer of conducting material without a barrier in between the two conducting materials. The absence of the barrier at the bottom of the via can reduce the contact resistance of the interconnect structure.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Tz-Jun Chien-Hsin Ming-Han
Kuo Ho Lee