Nixon & Vanderhye, P.C.
Semiconductor device and a method for producing the same
 A semiconductor device includes an insulating substrate; and an electrode wiring provided on an area of the insulating substrate. The electrode wiring is formed of a material selected from the group consisting of an alloy of Ta and Nb, Nb, and a metal mainly including Nb. A method for producing a semiconductor device includes the steps of forming a layer including Nb doped with nitrogen on an insulating substrate by a sputtering method in an atmosphere of an inert gas including nitrogen, and then patterning the layer to form an electrode wiring on an area of the insulating substrate; and forming an oxide film at a portion of the electrode wiring by anodization, the portion including at least a surface thereof. 
Sharp Kabushiki Kaisha
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inventional inventional inventional
Yasunori Masahito Hisashi Koji
Shimada Goto Saito Taniguchi