Robinson Intellectual Property Law Office, P.C.
Method for manufacturing SOI substrate
It is an object of the preset invention to increase adhesiveness of a semiconductor layer and a base substrate and to reduce defective bonding. An oxide film is formed on a semiconductor substrate and the semiconductor substrate is irradiated with accelerated ions through the oxide film, whereby an embrittled region is formed at a predetermined depth from a surface of the semiconductor substrate. Plasma treatment is performed on the oxide film on the semiconductor substrate and the base substrate by applying a bias voltage, the surface of the semiconductor substrate and a surface of the base substrate are disposed opposite to each other, a surface of the oxide film is bonded to the surface of the base substrate, heat treatment is performed after the surface of the oxide film is bonded to the surface of the base substrate, and separation is caused along the embrittled region, whereby a semiconductor layer is formed over the base substrate with the oxide film interposed therebetween.
Semiconductor Energy Laboratory Co., Ltd.
H
H01L
inventional
Motomu Shinya Hitoshi Atsushi Taiga Akihiro
Kurata Sasagawa Nakayama Hikosaka Muraoka Ishizuka