Maschoff Brennan
Memory device and manufacturing method thereof
A memory device includes a conductive wire, a first 2-D material layer, a phase change element, and a top electrode. The first 2-D material layer is over the conductive wire. The phase change element extends along a surface of the first 2-D material layer distal to the conductive layer. The top electrode is over the phase change element.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Jau-Yi Yu-Sheng Carlos H. Da-Ching
Wu Chen Diaz Chiou