Marshall, Gerstein & Borun LLP
Method of manufacturing flash memory device with void between gate patterns
A method of manufacturing a flash memory device includes the steps of forming gate patterns for cells and gate patterns for select transistors over a semiconductor substrate, forming a buffer insulating layer on the resulting surface including the gate patterns, forming an insulating layer to form void in spaces between the gate patterns for cells, forming a nitride layer on the insulating layer, and forming a spacer on one side of each of the gate patterns for select transistors by a spacer etch process.
Hynix Semiconductor Inc.
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Jung Geun Seong Hwan Cheol Mo Whee Won
Kim Myung Jeong Cho