Magnetic tunnel junction device fabrication
In a particular embodiment, a method of forming a magnetic tunnel junction (MTJ) device includes forming an MTJ cap layer on an MTJ structure and forming a top electrode layer coupled to the MTJ cap layer. The top electrode layer includes at least two layers and one layer of the two layers includes a nitrified metal.
QUALCOMM Incorporated
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inventional inventional inventional inventional
Xia Seung H.
Li Kang