Anova Law Group, PLLC
Vertical tunneling field effect transistor device
A vertical tunneling field effect transistor is provided and includes: a semiconductor substrate; a first doped layer on the semiconductor substrate; vertical nanowires on the first doped layer; a second doped layer on a top of each vertical nanowire; an interlayer dielectric layer on the first doped layer, including a cavity between the adjacent vertical nanowires through the interlayer dielectric layer and exposing sidewalls of the adjacent vertical nanowires; a high-K gate dielectric layer in sidewalls and a bottom of each cavity; and a gate electrode layer on the high-K gate dielectric layer to fill each cavity.
Semiconductor Manufacturing International (Shanghai) Corporation Semiconductor Manufacturing International (Beijing) Corporation
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Yong
Li