McClure, Qualey & Rodack, LLP
Method of patterning resist layer and method of forming semiconductor structure using patterned resist layer
A method of patterning a resist layer is provided. The method includes forming the resist layer over the top surface of a silicon-containing layer that has a first contact angle. The method also includes exposing and developing the resist layer to form a patterned resist layer and expose a portion of the top surface of the silicon-containing layer. The method also includes applying a treating compound to the exposed portion of the top surface of the silicon-containing layer, so that the exposed portion of the top surface has a second contact angle that is greater than the first contact angle. The method also includes reflowing the patterned resist layer over the top surface of the silicon-containing layer having the second contact angle.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Ching-Yu Chien-Wei Li-Po
Chang Wang Yang