Sughrue Mion, PLLC
Plasma etching method
Provided is a plasma etching method comprising supplying heptafluoropropyl methyl ether (HFE) gas, argon (Ar) gas and oxygen (O2) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.
AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
H H Y C H Y C
H01L H01L Y02C C09G H01L Y02P C09K
inventional inventional additional inventional inventional additional inventional
Chang-Koo Jun-Hyun Jin-Su
Kim Kim Park