WPAT, P.C., Intellectual Property Attorneys
Semiconductor structure and manufacturing method for the semiconductor structure
The present disclosure provides a semiconductor device, including a substrate, a metal gate layer over the substrate, a channel between a source region and a drain region in the substrate, and a ferroelectric layer between the metal gate layer and the substrate, wherein the ferroelectric layer is configured to cause a strain in the channel when applied with an electrical field.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Chih-Yu Chun-Yen Chi On Te-Yang Sai-Hooi Bo-Feng
Chang Peng Chui Lai Yeong Young