Haynes and Boone, LLP
Vias for cobalt-based interconnects and methods of fabrication thereof
Interconnect structures and corresponding techniques for forming the interconnect structures are disclosed herein. An exemplary interconnect structure includes a conductive feature that includes cobalt and a via disposed over the conductive feature. The via includes a first via barrier layer disposed over the conductive feature, a second via barrier layer disposed over the first via barrier layer, and a via bulk layer disposed over the second via barrier layer. The first via barrier layer includes titanium, and the second via barrier layer includes titanium and nitrogen. The via bulk layer can include tungsten and/or cobalt. A capping layer may be disposed over the conductive feature, where the via extends through the capping layer to contact the conductive feature. In some implementations, the capping layer includes cobalt and silicon.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Min-Yann Yu-Jen Kuo-Hua Hua Feng
Hsieh Chang Pan Chen