Christie, Parker & Hale, LLP
Thin film transistor with offset structure and electrodes in a symmetrical arrangement
A thin film transistor (TFT) having an offset structure is disclosed. The TFT maintains a sufficiently low “off” current and a sufficiently high “on” current. The TFT includes an active region. The active region includes a gate electrode; an active layer that overlaps with the gate electrode; a gate insulating layer between the gate electrode and the active layer; and a source/drain electrode layer including source/drain electrodes that are electrically connected to the active region. Some of the source/drain electrodes overlap partially with the gate electrode. Other of the source/drain electrodes are offset from the gate electrode. The source/drain electrodes and the gate electrode are in a symmetrical arrangement.
Samsung Display Co., Ltd.
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inventional inventional inventional inventional
Yong-Jae Jeong-Hwan Ki-Hong Jung-Hyun
Jang Kim Kim Kim