Maschoff Brennan
Memory devices with improved refreshing operation
A memory device for memory cell programming and erasing with refreshing operation is disclosed. The memory device includes a location-related memory cell and a refresh module. The location-related memory cell is coupled to a bit line. The refresh module is configured to refresh the location-related memory cell by reading data stored in the location-related memory cell and then writing the data back to the location-related memory cell in a condition that a target memory cell that is coupled to the bit line is programmed or erased. A method for memory cell programming and erasing with refreshing operation is also disclosed herein.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Cheng-Hsiung Chien-Yin Gu-Huan Yue-Der
Kuo Liu Li Chih