Harness, Dickey & Pierce, P.L.C.
Method of writing/reading data into/from memory cell and page buffer using different codes for writing and reading operations
Provided are a method of writing/reading data into/from a memory cell and a page buffer using different codes for the writing and reading operations. The method of writing/reading data into/from a memory cell that has a plurality of threshold voltage distributions includes a data writing operation and a data reading operation. In the data writing operation, data having a plurality of bits is written into the memory cell by using a plurality of writing codes corresponding to threshold voltage distributions. In the data reading operation, the data having a plurality of bits is read from the memory cell by using reading codes corresponding to the threshold voltage distributions from among the threshold voltage distributions. In the method of writing/reading data into/from a memory cell, a part of the writing codes is different from a corresponding part of the reading codes.
Samsung Electronics Co., Ltd.
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inventional additional additional inventional inventional
Kyoung-lae Jun-jin Seung-hwan Sung-jae Seung-hoon Yoon-dong Ju-hee Jae-woong
Cho Kong Song Byun Lee Park Park Hyun