Harness, Dickey & Pierce, P.L.C.
Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the same
A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si—CH3 bonding unit to Si—O bonding unit ranges from 0.5 to 5.
Samsung Electronics Co., Ltd. DNF Co., Ltd.
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Wonwoong Sang Yong Myong Woon Younjoung In Kyung Sunhye Sang Ick Jungsik
Chung Jeon Kim Cho Jung Hwang Lee Choi