Slater Matsil, LLP
Methods of forming semiconductor devices and structures thereof
Methods of forming semiconductor devices and structures thereof are disclosed. In some embodiments, a semiconductor device includes a substrate that includes fins. Gates are disposed over the fins, the gates being substantially perpendicular to the fins. A source/drain region is disposed on each of fins between two of the gates. A contact is coupled to the source/drain region between the two of the gates. The source/drain region comprises a first width, and the contact comprises a second width. The second width is substantially the same as the first width.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Tzu-Chiang Chih Chieh Chia-Cheng Wei-Jen Tsung-Lin
Chen Yeh Ho Lai Lee