Slater Matsil, LLP
Metal etching stop layer in magnetic tunnel junction memory cells
A method of forming integrated circuits includes forming Magnetic Tunnel Junction (MTJ) stack layers, depositing a conductive etch stop layer over the MTJ stack layers, depositing a conductive hard mask over the conductive etch stop layer, and patterning the conductive hard mask to form etching masks. The patterning is stopped by the conductive etch stop layer. The method further includes etching the conducive etch stop layer using the etching masks to define patterns, and etching the MTJ stack layers to form MTJ stacks.
Taiwan Semiconductor Manufacturing Company, Ltd.
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additional inventional inventional
Jyu-Horng Sin-Yi Chen-Jung Han-Ting Yu-Shu Chien Chung Chih-Yuan Tai-Yen
Shieh Yang Wang Lin Chen Huang Ting Peng