Sughrue Mion, PLLC
Variable resistance memory devices
A variable resistance memory device includes a memory unit including a first electrode, a variable resistance pattern and a second electrode sequentially stacked on a substrate, a first selection structure on the memory unit, a third electrode structure on the first selection structure, and an anti-fuse including a fourth electrode, a second selection structure and a fifth electrode structure sequentially stacked. The fourth electrode directly contacts the second selection structure, and a bottom of the fourth electrode is lower than a bottom of the second electrode.
SAMSUNG ELECTRONICS CO., LTD.
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You-Jin Masayuki
Jung Terai