Myers Bigel Sibley & Sajovec, P.A.
Methods of forming flash memory devices including blocking oxide films
A method of forming a flash memory device can include forming a tunneling oxide film on a semiconductor substrate, forming a charge storing layer on the tunneling oxide film, forming a first blocking oxide film on the charge storing layer at a first temperature, forming a second blocking oxide film on the first blocking oxide film at a second temperature higher than the first temperature, and forming a gate electrode on the second blocking oxide film.
Samsung Electronics Co., Ltd.
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Seung-hwan Han-mei Min-kyung Sun-jung Se-hoon
Lee Choi Ryu Kim Oh