Vierra Magen Marcus LLP
Bit line resistance compensation
Methods for compensating for variations in bit line resistance during sensing of memory cells are described. The variations in bit line resistance may occur die-to-die or plane-to-plane on the same die. In some embodiments, for each die or memory plane on a die, a plurality of bit line read voltages associated with a plurality of zones may be determined based on sensing criteria. The sensing criteria may comprise a number of fail bits. Each zone of the plurality of zones may be associated with a memory array region within a die or memory plane. Prior to performing a read or verify operation on a group of memory cells, a bit line read voltage used during sensing of the group of memory cells may be determined based on the plurality of bit line read voltages and a zone associated with the group of memory cells.
SANDISK TECHNOLOGIES INC.
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Kwang Ho Siu Lung Man Lung Seungpil Teruhiko
Kim Chan Mui Lee Kamei