Venable LLP
Amorphous oxide and field effect transistor
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
JAPAN SCIENCE AND TECHNOLOGY AGENCY CANON KABUSHIKI KAISHA TOKYO INSTITUTE OF TECHNOLOGY
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Kenji Toshio Hideo Katsumi Masafumi
Nomura Kamiya Hosono Nakagawa Sano