Hauptman Ham, LLP
Method of manufacturing a capacitor
A method of forming a device comprises forming a through via extending from a surface of a substrate into the substrate. The method also comprises forming a first insulating layer over the surface of the substrate. The method further comprises forming a first metallization layer in the first insulating layer, the first metallization layer electrically connecting the through via. The method additionally comprises forming a capacitor over the first metallization layer. The capacitor comprises a first capacitor dielectric layer over the first metallization layer and a second capacitor dielectric layer over the first capacitor dielectric layer. The method also comprises forming a second metallization layer over and electrically connecting the capacitor.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Yuan-Hung Kuang-Wei Wen-Chih Chun Hua Shang-Yun Der-Chyang Shin-Puu
Liu Cheng Chiou Chang Hou Yeh Jeng