Winkle, PLLC
Apparatus and methods for forming a modulation doped non-planar transistor
Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed, which may include forming a modulation doped heterostructure, comprising forming an active portion having a first bandgap and forming a delta doped portion having a second bandgap.
Intel Corporation
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Jack Mantu Marko Ravi Willy Gilbert
Kavalieros Hudait Radosavljevic Pillarisetty Rachmady Dewey