Anova Law Group, PLLC
Metal interconnect structure and fabrication method thereof
The present disclosure provides metal interconnect structures and fabrication methods thereof. An exemplary fabrication method of the metal interconnect structure includes providing a semiconductor substrate having a surface; forming a first metal layer on the surface of the semiconductor substrate; forming a dielectric layer on the first metal layer; forming contact through holes exposing a surface of the first metal layer, and trenches being over the contact through holes and connecting with the contact through holes in the dielectric layer; forming a first metal barrier layer on inner surfaces of the trenches and the contact through holes; forming a metal nitride barrier layer covering the first metal barrier layer on the inner surfaces of the trenches and the contact through holes; and forming a second metal layer to fill the trenches and the contact through holes.
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
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Jiquan
Liu