Global shutter bulk charge modulated device
The invention describes image sensor array pixels with global and rolling shutter capabilities that utilize multiple BCMD transistors for storing and sensing charge for a single photodiode. This configuration improves the Dynamic Range (DR) of the sensor, by allowing sensing different image signals from a single pixel without saturation, a low level signal with long integration time followed by a high level signal with short integration time. Signal processing circuits can process these signals into a single Wide Dynamic Range (WDR) output. Further disclosed are pixels that use multiple-gate BCMD transistors for charge storage and sensing having multiple concentric gates, which allows changing the conversion gain of the BCMD transistors. Variable conversion gain is a useful feature when building WDR sensors since low conversion gain and high well capacity allows detection of high level signals and, at the same time, low level signals with high conversion gain and low noise.
Semiconductor Components Industries, LLC
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Jaroslav Gennadiy Xiangli Hirofumi Xia Chung Chun
Hynecek Agranov Li Komori Zhao Wan