McDermott Will & Emery LLP
Method for producing semiconductor device and semiconductor producing apparatus
A plasma of a gas containing an impurity is produced through a discharge in a vacuum chamber, and a plurality of substrates are successively doped with the impurity by using the plasma, wherein a plasma doping condition of a subject substrate is adjusted based on an accumulated discharge time until the subject substrate is placed in the vacuum chamber.
Panasonic Corporation
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inventional inventional inventional
Hiroyuki Bunji Katsumi Yuichiro Keiichi
Ito Mizuno Okashita Sasaki Nakamoto