Sughrue Mion, PLLC
Structure for realizing integrated circuit having Schottky diode and method of fabricating the same
An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.
Samsung Electronics Co., Ltd.
H H
H01L H01L
inventional inventional
Young-hoon Sang-wook Seong-hearn Il-jong Ja-nam
Min Kwon Lee Song Ku