Fish & Richardson P.C.
Semiconductor device
Provided is a semiconductor device capable of holding data for a long period. The semiconductor device includes first to third transistors, a capacitor, and a circuit. The third transistor includes a first gate and a second gate. A gate of the first transistor is electrically connected to a first terminal of the capacitor. A first terminal of the first transistor is electrically connected to the second gate. A second terminal of the first transistor is electrically connected to the circuit. A gate of second transistor is electrically connected to a first terminal of the second transistor. A first terminal of the second transistor is electrically connected to the second gate. A second terminal of the second transistor is electrically connected to a first terminal of the capacitor. The circuit is configured to generate a negative potential. A channel formation region of the first transistor preferably includes an oxide semiconductor.
Semiconductor Energy Laboratory Co., Ltd.
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Tomoaki Kazuaki Kiyoshi
Atsumi Ohshima Kato