Workman Nydegger
Ultraviolet light emitting diode devices and methods for fabricating the same
A UV LED device and the method for fabricating the same are provided. The device has aluminum nitride nucleating layers, an intrinsic aluminum gallium nitride epitaxial layer, an n-type aluminum gallium nitride barrier layer, an active region, a first p-type aluminum gallium nitride barrier layer, a second p-type aluminum gallium nitride barrier layer, and a p-type gallium nitride cap layer arranged from bottom to top on a substrate. A window region is etched in the p-type gallium nitride cap layer for emitting the light generated.
Xidian University
H H
H01L H01L
additional inventional
Peixian Yue Ling Xiaowei Xiaohua
Li Hao Yang Zhou Ma