Slater Matsil, LLP
Defect filling in patterned layer
Embodiments disclosed herein relate generally to forming a structure, e.g., in high aspect ratio trenches. In an embodiment, a method for semiconductor processing is provided. The method includes forming fins on a substrate. Sidewalls of the fins and a bottom surface between the sidewalls of the fins define a trench therebetween. The method includes forming a gate structure over the fins. The gate structure has a sidewall with a defect region formed therein. The method includes forming a filling layer to fill the defect region in the sidewall of the gate structure.
Taiwan Semiconductor Manufacturing Company, Ltd.
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De-Wei Chien-Hao Chia-Ao Yung-Cheng
Yu Chen Chang Lu