Oblon, McClelland, Maier & Neustadt, L.L.P.
Power semiconductor device
In a high speed switching power semiconductor device having a sense pad, a high voltage is generated during switching operations in well regions under the sense pad due to a displacement current flowing through its flow path with a resistance, whereby the power semiconductor device sometimes breaks down by dielectric breakdown of a thin insulating film such as a gate insulating film. In a power semiconductor device according to the invention, sense-pad well contact holes are provided on well regions positioned under the sense pad and penetrate a field insulating film thicker than the gate insulating film to connect to the source pad, thereby improving reliability.
Mitsubishi Electric Corporation
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Masayuki Naruhisa Shuhei Shoyu Shiro Kenichi Akihiko Yasuhiro
Imaizumi Miura Nakata Watanabe Hino Ohtsuka Furukawa Kagawa