Stevens, Davis, Miller & Mosher
Method for producing fine structure for electronic device
 In a method for producing a fine semiconductor structure, a first layer is formed on a second layer, an etching-resistant mask is formed on the first layer, the second layer is etched in an etchant to form a desired shape thereof, a composition of the first layer is different from a composition of the second layer, and at least one of boundary surfaces of the etching-resistant mask and the first layer facing to each other is substantially prevented from including another substance which is different from both of the etching-resistant mask and the first layer. 
Matsushita Electric Industrial Co., Ltd.
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Shinichi Yukio Hitomaro
Wakabayashi Toyoda Tougou