Birch, Stewart, Kolasch & Birch, LLP
Epitaxial growth of nitride semiconductor device
The present invention provides a semiconductor device with reducing dislocation density. The semiconductor device includes multiple nucleuses between a substrate and an AlGaInN compound semiconductor. The dislocation density that is induced by crystal lattice differences between the substrate and the AlGaInN compound semiconductor is significantly reduced and the growth of the AlGaInN compound semiconductor is improved.
United Epitaxy Company
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Chih-Sung Tzong-Liang
Chang Tsai