Duane Morris LLP
Method for forming openings in a substrate using bottom antireflective coatings
A method and system is disclosed for selectively forming a pattern for making openings in a substrate. A first set of openings are formed in a first photoresist layer coated on the substrate using a first mask. A developing bottom antireflective coating (BARC) layer is then formed over the first photoresist with the openings filled therewith. A second photoresist layer is formed over the BARC layer. A second set of openings are formed in the second photoresist layer using a second mask exposing the BARC layer directly underneath. The exposed part of the BARC layer is then removed. Subsequently, one or more openings of the first set in the first photoresist layer, after the exposed part of the BARC layer filled therein is removed, are used for forming the openings in the substrate.
Taiwan Semiconductor Manufacturing Co., Ltd.
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G03F H01L G03F H01L H01L
inventional inventional additional inventional inventional
Bang-Chein Jen-Chieh Jian-Hong
Ho Shih Chen