Hill & Simpson
Method of manufacturing semiconductor device
 A silicon dioxide film with a film thickness of 250 to 310 nm is formed on a conductive layer. A resist coated on the silicon dioxide film is exposed with an i-line in a wiring pattern, and developed to form the wiring pattern on the resist. The silicon dioxide film and the conductive layer are simultaneously processed using this resist as a mask. As a result, formation of tails in the resist can be suppressed, while a dielectric breakdown voltage across a conductive layer above the silicon dioxide film and the conductive layer below the silicon dioxide film is ensured, and an increase in step is suppressed. A wiring layer having a desired line width can be formed with high controllability. 
Sony Corporation
H H
H01L H01L
inventional additional
Hiroyuki
Yamada