Method of manufacturing a semiconductor device
The present invention proposes a method of manufacturing a semiconductor device, which includes the steps of providing a substrate with a memory region and a logic region, forming bit lines and logic gates respectively in the memory region and the logic region, wherein storage node regions are defined between bit lines, forming a first low-K dielectric layer on sidewalls of bit lines, forming a doped silicon layer in the storage node regions between bit lines, wherein the top surface of doped silicon layer is lower than the top surface of bit line, forming a second low-K dielectric layer on sidewalls of storage node regions, and filling up storage node regions with metal plugs.
Fujian Jinhua Integrated Circuit Co., Ltd. UNITED MICROELECTRONICS CORP.
H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional
Ying-Chiao Chun-Yuan Shih-Fang Yu-Chieh Chien-Ting Li-Wei Tsung-Ying
Wang Wu Tzou Lin Ho Feng Tsai