Myers Bigel Sibley & Sajovec, P.A.
Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impurities
A method of fabricating a uniformly wrinkled capacitor lower electrode without the need to perform a high-temperature heat treatment and a method of fabricating a capacitor including the uniformly wrinkled capacitor lower electrode are provided. A first conductive layer is formed. Then, a second conductive layer including about 20% to about 50% of impurities is formed on the first conductive layer. Next, at least some of the impurities are exhausted from the second conductive layer by heat treating the second conductive layer. A surface of the second conductive layer is wrinkled due to the exhaustion of the impurities from the second conductive layer. A dielectric layer and an upper capacitor electrode may then be formed.
Samsung Electronics Co., Ltd.
H H
H01L H01L
inventional additional
Jae-hyun Suk-jin Wan-don Seok-jun Jin-yong Jung-hee
Joo Chung Kim Won Kim Chung