Myers Bigel & Sibley, P.A.
Vertical memory devices and methods of manufacturing the same
In a method of a vertical memory device, insulation layers and sacrificial layers are alternately and repeatedly formed on a substrate. A hole is formed through the insulation layers and the sacrificial layers that expose a top surface of the substrate. Then, an interior portion of the hole may be enlarged. A semiconductor pattern is formed to partially fill the enlarged portion of the hole. A blocking layer, a charge storage layer and a tunnel insulation layer may be formed on a sidewall of the hole and the semiconductor pattern. Then, the tunnel insulation layer, the charge storage layer and the blocking layer are partially removed to expose a top surface of the semiconductor pattern. A channel is formed on the exposed top surface of the semiconductor pattern and the tunnel insulation layer. The sacrificial layers are replaced with gate electrodes.
Samsung Electronics Co., Ltd.
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inventional inventional inventional
Ju-Wan Sang-Hoon Ji-Woon Kyung-Tae Ji-Youn Seung-Mok Tae-Jong Koong-Hyun Hyun-Yong Myoung-Bum
Kim Lee Im Jang Seo Shin Han Nam Go Lee