Katten Muchin Zavis Rosenman
S-parameter microscopy for semiconductor devices
A method of using bias-dependent S-parameter measurements as a form of microscopy. The microscopy can be used to resolve the details of the internal charge and electric field structure of a semiconductor device. Like other forms of microscopy, the S-parameter microscopy focuses on pseudo &#8220;images&#8221; and provides a contrast in the &#8220;images&#8221;. Essentially, the images are gathered in raw form as S-parameter measurements and extracted as small signal models. The models are used to form charge control maps, through a selective method analogous to focusing. Focusing is provided by an algorithm for the unique determination of small signal parameters with contrasts provided by utilizing measured bias dependent activity to discriminate boundaries between the electrical charge and fields. As such, the system is able to accurately forecast semiconductor performance.
Northrop Grumman Corporation
G G G G G H
G01R G01R G01R G01R G06F H01L
additional inventional additional additional inventional inventional
Roger S.
Tsai