Haynes and Boone, LLP
Soft error rate (SER) reduction in advanced silicon processes
Provided is a method of fabricating a semiconductor device. The method includes providing a substrate. The method includes forming a portion of an interconnect structure over the substrate. The portion of the interconnect structure has an opening. The method includes obtaining a boron-containing gas that is free of a boron-10 isotope. The method includes filling the opening with a conductive material to form a contact. The filling of the opening is carried out using the boron-containing gas. Also provided is a semiconductor device. The semiconductor device includes a substrate. The semiconductor device includes an interconnect structure formed over the substrate. The semiconductor device includes a conductive contact formed in the interconnect structure. The conductive contact has a material composition that includes Tungsten and Boron, wherein the Boron is a 11B-enriched Boron.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Jang Jung Dong Yung-Huei Chou-Jie Wei-Cheng Chia-Fang
Lee Gui Lee Tsai Chu Wu