Lowe Hauptman Ham & Berner, LLP
Bipolar transistor, BiCMOS device, and method for fabricating thereof
Provided are bipolar transistor, BiCMOS device and method of fabricating thereof, in which an existing sub-collector disposed beneath a collector of a SiGe HBT is removed and a collector plug disposed at a lateral side of the collector is approached to a base when fabricating a Si-based very high-speed device, whereby it is possible to fabricate the SiGe HBT and an SOI CMOS on a single substrate, reduce the size of the device and the number of masks to be used, and implement the device of high density, low power consumption, and wideband performance.
Electronics and Telecommunications Research Institute
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Seung Yun Jin Yeong Kyoung Ik
Lee Kang Cho