Rabin & Berdo, P.C.
Manufacturing method for a TFT electrode for preventing metal layer diffusion
A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.
Quanta Display Inc. Toppoly Optoelectronics Corp. Chi Mei Optoelectronics Corp. Chunghwa Picture Tubes, Ltd. Industrial Technology Research Institute AU Optronics Corp. Taiwan TFT LCD Association Hannstar Display Corp.
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Chi-Shen Cheng-Hsing Te-Ming Chien-Wei Yu-Chang Cheng-Chung Chai-Yuan Yi-Hsun Yu-Chi Shuo-Wei Chia-Hsiang
Lee Chen Chu Wu Sun Chen Sheu Huang Lee Liang Chen