McClure, Qualey & Rodack, LLP
Method for forming semiconductor structure using polishing process
Methods for forming semiconductor structures are provided. The method for forming a semiconductor structure includes forming a conductive material in the trench and over a top surface of the material layer and polishing the conductive material with a slurry to expose the top surface of the material layer and to form a conductive structure in the trench. The method for forming a semiconductor structure further includes forming a material layer over a substrate and forming a trench in the material layer. The method for forming a semiconductor structure further includes removing the slurry with a reducing solution. In addition, the reducing solution includes a reducing agent, and a standard electrode voltage of the conductive material is greater than a standard electrode voltage of the reducing agent.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Yi-Sheng Chi-Jen Liang-Guang Cheng-Chun Pinlei Edmund Chun-Wei
Lin Liu Chen Chang Chu Hsu