Harness, Dickey & Pierce, P.L.C.
Low-defect semiconductor device and method of manufacturing the same
Provided are a low-defect semiconductor device and a method of manufacturing the same. The method includes forming a buffer layer on a silicon substrate, forming an interface control layer on the buffer layer under a first growth condition, and forming a nitride stack on the interface control layer under a second growth condition different from the first growth condition.
SAMSUNG ELECTRONICS CO., LTD.
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inventional inventional additional additional additional inventional additional additional inventional inventional
Young-jo Jae-kyun Jun-youn Eun-ha Young-soo Joo-sung
Tak Kim Kim Lee Park Kim