Slater & Matsil, L.L.P.
Diffusion topography engineering for high performance CMOS fabrication
Semiconductor structures are formed using diffusion topography engineering (DTE). A preferred method includes providing a semiconductor substrate, forming trench isolation regions that define a diffusion region, performing a DTE in a hydrogen-containing ambient on the semiconductor substrate, and forming a MOS device in the diffusion region. The DTE causes silicon migration, forming a rounded or a T-shaped surface of the diffusion regions. The method may further include recessing a portion of the diffusion region before performing the DTE. The diffusion region has a slanted surface after performing the DTE.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chih-Hsin Wen-Chin Hung-Wei Chung-Hu
Ko Lee Chen Ke