Finnegan, Henderson, Farabow & Garrett
Integrated circuit device
 An integrated circuit device includes complementary MOS circuit elements formed in an N type semiconductor substrate with a P type region formed in the substrate. Protective circuit elements connected to an input terminal are formed in an area of the substrate other than the region thereof having the complementary MOS circuit elements formed therein. At least one of the regions constituting the protective circuit elements is formed in a P type additional region formed in the area of the N type substrate. 
Tokyo Shibaura Electric Co., Ltd.
H
H01L
inventional
Yasoji Tomohisa
Suzuki Shigematsu