Birch, Stewart, Kolasch & Birch, LLP
Schottky diode with dielectrically isolated diffusions, and method of manufacturing the same
A method for manufacturing a semiconductor device includes forming a first well region in a semiconductor substrate, forming isolation structures on the semiconductor substrate, and forming second well regions and a third well region in the first well region, wherein the second well regions are isolated from the third well region by the isolation structures, and two of the adjacent second well regions have a first distance between them. The method also includes performing a rapid thermal annealing process to shorten the first distance to a second distance. The method further includes forming first barrier metal layers on the first well region and covering the second well regions, forming a second barrier metal layer on the first well region and covering the third well region, forming first electrodes on the first barrier metal layers, and forming a second electrode on the second barrier metal layer.
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional additional inventional inventional inventional inventional inventional inventional inventional
Chia-Hao Hsiung-Shih Chih-Cherng Pei-Heng Jui-Chun Manoj
Lee Chang Liao Hung Chang Kumar