Ladas & Parry LLP
Oxide thin film transistor and manufacturing method thereof, array substrate and display device
An oxide thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method comprises: forming a gate electrode (1), a gate insulating layer (4) and an oxide semiconductor thin film (10) sequentially on a substrate; forming a first photoresist (11a) above an active layer region of the oxide semiconductor thin film (10), such that a thickness of the first photoresist above a channel region is greater than a thickness of the first photoresist above a non-channel region; reserving the first photoresist (11a) above the channel region; forming a source-drain metal thin film and a second photoresist (11b) sequentially on a pattern of an active layer, removing a portion of the source-drain metal thin film and a portion of the second photoresist (11b), such that an edge of the first photoresist (11a) above the channel region is covered with the source-drain metal thin film; and obtaining patterns of a source electrode and a drain electrode. Upon preliminary patterns of the source electrode and the drain electrode are formed, the photoresist instead of a protective layer is used to protect the active layer, therefore shortening a length of a channel of the oxide thin film transistor.
BOE TECHNOLOGY GROUP CO., LTD.
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Hyun Sic Yun Sik
Choi Im