Myers Bigel Sibley & Sajovec, P.A.
Nonvolatile memory device and program method thereof
Methods of operating nonvolatile memory devices are described. A bit line program voltage is applied to at least one selected bit line and a bit line program-inhibition voltage is applied to at least one unselected bit line. The methods further include concurrently applying a word line program voltage to a selected word line, a first pass voltage to at least one unselected word line and a second pass voltage less than the first pass voltage to at least one unselected word line immediately adjacent the selected word line on a string selection line side of the selected word line.
Samsung Electronics Co., Ltd.
G G G
G11C G11C G11C
inventional inventional inventional
Jeongseok Yongjoon Seung-Jun
Nam Choi Lee