Oblon, Fisher, Spivak, McClelland & Maier
Vapor deposition method for the GaAs thin film
 A vapor phase deposition method for the GaAs thin film is disclosed, which is characterized in that, in the metal organic chemical vapor deposition method (MOCVD method) wherein arsine gas and organic gallium gas are decomposed thermally and GaAs crystals are allowed to deposit onto the GaAs substrate, for the deposition of n-type conductive GaAs crystals, arsine gas and organic gallium gas are supplied at such a supplying ratio (V/III) as p-type conductive GaAs crystals are deposited unless an impurity is added intentionally and gas of the compounds of VI group elements is added to these gases to make n-type conductive GaAs crystals having a carrier density of not less than 1.times.10.sup.16 cm.sup.-3. 
The Furukawa Electric Co., Ltd.
C H H Y H H H C
C30B H01L H01L Y10S H01L H01L H01L C30B
inventional inventional inventional additional inventional inventional inventional inventional
Seiji Yuzo Hiroshi Masakiyo
Kojima Kashiwayanagi Kikuchi Ikeda