Dentons US LLP
Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method
A method of manufacturing a semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
Sony Corporation
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Masao Yasuhiko Takashi Motonobu Tsuyoshi Osamu Takeharu Shiro Katsuyoshi
Ikeda Suzuki Mizuno Takeya Tojo Goto Asano Uchida Shibuya