Cantor Colburn LLP
Uniform vertical field effect transistor spacers
Aspects of the disclosure include a semiconductor structure that includes a vertical fin structure having a top portion, a bottom portion, vertical side walls, a source area in contact with the vertical fin structure, a drain area in contact with the vertical fin structure, a plurality of spacers comprising a first oxide layer in contact with the source area, and a second oxide layer in contact with the drain area. The first oxide layer can have a thickness that is equal to a thickness of the second oxide layer.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Kangguo Juntao
Cheng Li