Brinks Hofer Gilson & Lione
Spin valve thin film magnetic element having first and second free magnetic layers having antiparallel magnetization directions
The present invention provides a spin valve thin film magnetic element in which the sensitivity and the rate of change in resistance can be increased while stably maintaining the ferrimagnetic state of a free magnetic layer. The spin valve thin film magnetic element includes an antiferromagnetic layer, a pinned magnetic layer in which the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer in contact with the pinned magnetic layer, and a free magnetic layer in contact with the nonmagnetic conductive layer. The free magnetic layer includes a nonmagnetic intermediate layer, and first and second free magnetic layers with the nonmagnetic intermediate layer provided therebetween, the thickness of the second free magnetic layer provided on the nonmagnetic conductive layer side being larger than that of the first free magnetic layer. Therefore, the rate of change in resistance of the spin valve thin film magnetic element can be increased, and the spin flopping field of the free magnetic layer can be increased.
Alps Electric Co., Ltd.
G H B B G B H
G11B H01F B82Y B82Y G11B B82Y H01F
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Masamichi Kenichi Naoya Yosuke
Saito Tanaka Hasegawa Ide