Oblon, Fisher, Spivak, McClelland & Maier
Semiconductor memory system with dynamic random access memory cells
 A dynamic random access memory system comprises first and second memory banks. A plurality of memory cells connected to a word line are grouped into first and second groups. The first group is arranged in the first memory bank and the second group is arranged in the second memory bank. Read/write means is provided in which each n bits from and to the first group and each n bits from and to the second group are read and written alternatively. Each bit is read and written in synchronism with the toggles of a column address strobe signal. 
Kabushiki Kasiha Toshiba
G G G
G11C G11C G11C
inventional inventional inventional
Mitsugi Yasuo Shigeyoshi Fumio Kazunori
Ogura Itoh Watanabe Horiguchi Ohuchi