Stacked gate structures
An embodiment of the invention may include a semiconductor structure and method of manufacturing. The semiconductor structure may include a top channel and a bottom channel, wherein the top channel includes a plurality of vertically oriented channels. The bottom channel includes a plurality of horizontally oriented channels. The semiconductor structure may include a gate surrounding the top channel and the bottom channel. The semiconductor structure may include spacers located on each side of the gate. A first spacer includes a dielectric material located between the plurality of vertically oriented channels. A second spacer includes a dielectric material located between the plurality of horizontally oriented channels. This may enable spacer formation between the vertical spacers.
International Business Machines Corporation
H H H H H H H H H H H B H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L B82Y H01L H01L H01L H01L H01L H01L
inventional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional
Ruilong Juntao Chen Lan Heng Dechao Junli Chanro Sung Dae Kangguo Ruqiang
Xie Li Zhang Yu Wu Guo Wang Park Suk Cheng Bao