Lee & Morse, P.C.
Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device includes forming an interlayer dielectric film that has first and second trenches on first and second regions of a substrate, respectively, forming a first metal layer along a sidewall and a bottom surface of the first trench and along a top surface of the interlayer dielectric film in the first region, forming a second metal layer along a sidewall and a bottom surface of the second trench and along a top surface of the interlayer dielectric film in the second region, forming a first sacrificial layer pattern on the first metal layer such that the first sacrificial layer fills a portion of the first trench, forming a first electrode layer by etching the first metal layer and the second metal layer using the first sacrificial layer pattern, and removing the first sacrificial layer pattern.
Samsung Electronics Co., Ltd.
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Bo-Un Jung-Chan Sang-Bom Seung-Jae Yoo-Jung Dae-Young Ki-Hyung Cheol Jae-Sung
Yoon Lee Kang Lee Lee Kwak Ko Kim Hur