Dority & Manning, P.A.
Processing of workpieces using ozone gas and hydrogen radicals
Methods for processing a workpiece are provided. The workpiece can include a ruthenium layer and a copper layer. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The method can include performing an ozone etch process on the workpiece to at least a portion of the ruthenium layer. The method can also include performing a hydrogen radical treatment process on a workpiece to remove at least a portion of an oxide layer on the copper layer.
MATTSON TECHNOLOGY, INC. BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD
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H01L H01L
inventional inventional
Michael X. Qi Hua Haichun
Yang Zhang Chung Yang