F. Chau & Associates, LLC
Method of manufacturing the semiconductor device
A method of manufacturing semiconductor device includes preparing a substrate having a first surface and a second surface opposite to the first surface. A first insulation layer is formed on the second surface. A sacrificial layer is formed on the first insulation layer. An opening is formed to penetrate through the substrate and extend from the first surface to a portion of the sacrificial layer. A second insulation layer is formed on an inner wall of the opening. A plug is formed to fill the opening. The sacrificial layer is removed to expose a lower portion of the plug through the second surface.
Samsung Electronics Co., Ltd.
H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional additional additional additional additional additional additional additional additional inventional additional inventional additional additional additional additional additional additional
Min-Seung Ju-Ii Nam-Seog Keum-Hee Kyu-Ha Ui-Hyoung
Yoon Choi Kim Ma Lee Lee