Breiner & Breiner, L.L.C.
Vertical transistor comprising a mobile gate and a method for the production thereof
What is proposed is a vertical field effect transistor produced from a semiconductor wafer, comprising a residual transistor composed of a source zone, a channel zone and a drain zone, as well as a movable gate structure disposed by means of at least one flexible suspension in front of said channel zone and spaced therefrom, which is characterized by the provision that the movable gate structure consists of the material of said semiconductor wafer. The suspensions of the movable structure preferably present a high ratio of their height to their width, such that the movable gate may preferably move in the wafer plane.
Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung, e.V.
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G01P G01L H01L G01P
inventional inventional inventional inventional
Andreas Thomas Steffen
Bertz Gessner Heinz