Birch, Stewart, Kolasch, and Birch, LLP
Magnetic random access memory with lower switching field
A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.
Industrial Technology Research Institute
H H H B G
H01F H01L H01F B82Y G11C
inventional inventional additional inventional inventional
Ming-Jer Lien-Chang Yung-Hsiang Yuan-Jen Wei-Chuan
Kao Wang Chen Lee Chen