JCIPRNET
Semiconductor structure, 3DIC structure and method of fabricating the same
Provided is a three-dimensional integrated circuit (3DIC) structure including a first die and a second die bonded together by a hybrid bonding structure. One of the first die and the second die has a pad and a cap layer disposed over the pad. The cap layer exposes a portion of a top surface of the pad, and the portion of the top surface of the pad has a probe mark. A bonding metal layer of the hybrid bonding structure penetrates the cap layer to electrically connect to the pad. A method of fabricating the first die or the second die of 3DIC structure is also provided.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Jie Hsien-Wei Ming-Fa Sung-Feng
Chen Chen Chen Yeh