Eschweiler & Potashnik, LLC
RRAM cell with PMOS access transistor
In some embodiments, the present disclosure relates to a method of operating an RRAM cell having a PMOS access transistor. The method may be performed by forming an initial conductive filament within a dielectric data storage layer of an RRAM cell having a bottom electrode connected to a drain terminal of a PMOS transistor and a top electrode separated from the bottom electrode by the dielectric data storage layer. The initial conductive filament is formed by turning on the PMOS transistor by providing a substantially zero first forming voltage to a gate terminal of the PMOS transistor, by providing a substantially zero second forming voltage to a source terminal of the PMOS transistor, by providing a first non-zero forming voltage to a bulk terminal of the PMOS transistor, and by providing a second non-zero forming voltage to the top electrode.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chin-Chieh Kuo-Chi Sheng-Hung Yu-Wen Hsia-Wei Jen-Sheng Chih-Yang Wen-Ting
Yang Tu Shih Liao Chen Yang Chang Chu