Slater & Matsil, L.L.P.
Structure for a multiple-gate FET device and a method for its fabrication
A method for forming a semiconductor device and a device made using the method are provided. In one example, the method includes forming a hard mask layer on a semiconductor substrate and patterning the hard mask layer to form multiple openings. The substrate is etched through the openings to form forming a plurality of trenches separating multiple semiconductor mesas. The trenches are partially filled with a dielectric material. The hard mask layer is removed and multiple-gate features are formed, with each multiple-gate feature being in contact with a top surface and sidewalls of at least one of the semiconductor mesas.
Taiwan Semiconductor Manufacturing Company, Ltd.
Fu-Liang Chao-Hsiung Chang-Yun Sheng-Da Tang-Xuang Ping-Kun Hung-Wei
Yang Wang Chang Liu Zhong Wu Chen