Armstrong, Kratz, Quintos, Hanson & Brooks, LLP
Semiconductor capacitor with diffusion prevention layer
A capacitor which has a lower electrode having a structure in which the first conductive layer containing a first metal, a second conductive layer that is formed on the first conductive layer and made of the metal oxide of the second metal different from the first metal, and a third conductive layer that is formed on the second conductive layer and made of a third metal different from the first metal. These layers are formed sequentially. A dielectric layer is formed on the lower electrode, and an upper electrode is formed on the capacitor dielectric layer.
Fujitsu Limited
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H01L H01L H01L
additional additional inventional
Ko Mitsushi Wensheng
Nakamura Fujiki Wang