Anova Law Group, PLLC
Semiconductor structure and fabrication method
Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a base substrate having an opening and forming a first gate layer in the opening. The first gate layer closes a top of the opening and includes a void. The method also includes forming a second gate layer on the first gate layer. An atomic radius of a material of the second gate layer is smaller than gaps among the atoms of the material of the first gate layer. Further, the method includes performing a thermal annealing process to cause atoms of the material of the second layer to pass through the first gate layer to fill the void.
Semiconductor Manufacturing International (Beijing) Corporation Semiconductor Manufacturing International (Shanghai) Corporation
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Ching Yun Chao Ai Ji Jian Qiang Zi Rui
Chang Tian Wang Liu Liu