Fay, Sharpe, Fagan, Minnich & McKee LLP
Removable large area, low defect density films for led and laser diode growth
A technique based on etching a release layer, for separating the nearly lattice matched substrate from a base substrate is disclosed. A nearly lattice matched substrate for the epitaxial growth of Group-III nitride semiconductor devices and method of fabricating the nearly lattice matched substrate and devices is disclosed. Enhanced ELOG methods are used to create low defect density GaN films. The GaN films are used to grow Group-III nitride LEDs and laser diodes.
Xerox Corporation
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Jack Rose M. Noble M. Brent S. Christopher L. Linda T.
Walker Wood Johnson Krusor Chua Romano