WPAT, P.C., Intellectual Property Attorneys
Chemical mechanical polishing method
A planarization method and a CMP method are provided. The planarization method includes providing a substrate with a first region and a second region having different degrees of hydrophobicity or hydrophilicity and performing a surface treatment to the first region to render the degrees of hydrophobicity or hydrophilicity in proximity to that of the second region. The CMP method includes providing a substrate with a first region and a second region; providing a polishing slurry on the substrate, wherein the polishing slurry and the surface of the first region have a first contact angle, and the polishing slurry and the surface of the first region have a second contact angle; modifying the surface of the first region to make a contact angle difference between the first contact angle and the second contact angle equal to or less than 30 degrees.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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H01L H01L H01L
inventional inventional inventional
Fang-I Hsin-Ying Chia-Jung Tung-Kai Kei-Wei Chun-Hao Kao-Feng Chih-Chieh Ching-Hsiang Hui-Chi
Chih Ho Hsu Chen Chen Kung Liao Chang Tsai Huang