Jiang Chyun IP Office
Bump fabrication process
The present invention provides a bump fabrication process. After forming an under bump metallurgy (UBM) layer and bumps in sequence over the substrate, the under bump metallurgy layer that is not covered by the bumps is etched with an etchant. The etchant mainly comprises sulfuric acid and de-ionized water. The etchant can etch the nickel-vanadium layer of the UBM layer without damaging the bumps.
Advanced Semiconductor Engineering, Inc.
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Chao-Fu Chun-Chi Jau-Shoung Ho-Ming Yu-Chen Su Jen-Kuang Min-Lung Ching-Huei Tsung-Hua
Weng Lee Chen Tong Chou Tao Fang Huang Su Wu