Marshall, Gerstein & Borun LLP
Method of forming gate of flash memory device
A method of forming a gate of a flash memory device, including the steps of forming a gate on a semiconductor substrate and forming an oxide layer on the entire surface of the gate, forming a nitride layer on a sidewall of the oxide layer in a spacer form, performing a polishing process so that a top surface of the gate is exposed, and then stripping the nitride layer to form an opening, forming a barrier metal layer on a sidewall of the opening, and forming a tungsten layer in the opening.
Hynix Semiconductor Inc.
H H
H01L H01L
inventional inventional
Cheol Mo Jung Geun Seong Hwan Whee Won
Jeong Kim Myung Cho