NSIP Law
Method for preparing a SiC ingot and device for preparing a SiC ingot wherein electrical resistance of crucible body is 2.9 ohms or more
A method for preparing a SiC ingot includes preparing a crucible assembly comprising a crucible body having an internal space, loading a raw material into the internal space of the crucible body and placing a plurality of SiC seed in the internal space of the crucible body at regular intervals spaced apart from the raw material, and growing the SiC ingot from the plurality of SiC seed by adjusting the internal space of the crucible body to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the plurality of SiC seed. A density of the crucible body may be 1.70 to 1.92 g/cm3.
SENIC INC.
C C C C C C C C
C30B C30B C23C C30B C23C C23C C30B C23C
inventional inventional inventional inventional inventional inventional additional inventional
Jung-Gyu Kap-Ryeol Myung-Ok Jongmin Jung Woo Byung Kyu Jong Hwi Sang Ki Eun Su
Kim Ku Kyun Shim Choi Jang Park Ko Yang