Finnegan, Henderson, Farabow & Garrett
High density semiconductor memory device formed in a well and having more than one capacitor
 A semiconductor memory device comprising an N conductivity type semiconductor substrate, a P conductivity type well formed in a specified section of the surface of the semiconductor substrate, N conductivity type source and drain regions formed in the P conductivity type well, and a gate insulation layer deposited on the surface of the well over the source and drain regions. The P conductivity type well has a higher impurity concentration than the N conductivity type semiconductor substrate and the N conductivity type source and drain regions have a higher impurity concentration than the P conductivity type well. An insulation film is formed on the drain region and the insulation film, a metal electrode layer deposited on the insulation film and drain region collectively institute a capacitor. 
Tokyo Shibaura Electric Co., Ltd.
H G G
H01L G11C G11C
inventional inventional inventional
Kiyofumi Yasoji
Ochii Suzuki