Lowe Hauptman & Ham, LLP
Accumulation type FinFET, circuits and fabrication method thereof
This description relates to a fin field-effect-transistor (FinFET) including a substrate and a fin structure on the substrate. The fin structure includes a channel between a source and a drain, wherein the source, the drain, and the channel have a first type dopant, and the channel comprises at least one of a Ge, SiGe, or III-V semiconductor. The FinFET further includes a gate dielectric layer over the channel and a gate over the gate dielectric layer. The FinFET further includes a nitride spacer on the substrate adjacent the gate and an oxide layer between the nitride spacer and the gate and between the nitride spacer and the substrate.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Clement Hsingjen Chih Chieh Chih-Sheng
Wann Yeh Chang