Magnetic tunnel junction device and fabrication
A magnetic tunnel junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, a method of forming a magnetic tunnel junction (MTJ) device includes forming an MTJ cap layer on an MTJ structure and forming a top electrode layer over the MTJ cap layer. The top electrode layer includes a first nitrified metal.
QUALCOMM Incorporated
H H G G
H01L H01L G11C G06F
inventional inventional inventional inventional
Xia Seung H.
Li Kang