Kilpatrick Townsend & Stockton LLP
FinFET LDMOS device and manufacturing methods
An LDMOS (Laterally-Diffused Metal Oxide Semiconductor) device has a substrate, which includes a first doped region, a second doped region, and a shallow trench isolation (STI) region disposed in the second doped region. The first doped region and the second doped region are adjacent and have different conductivity types. The device also has a gate structure disposed on the substrate; the gate structure substantially does not overlap the second doped region.
Semiconductor Manufacturing International (Shanghai) Corporation
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Yong
Li