Birch, Stewart, Kolasch & Birch, LLP
Fabrication method for flash memory source line and flash memory
A fabrication method for flash memory. The method comprises providing a substrate, and a first insulation layer, a first conductive layer, a second insulation layer thereon. The second insulation layer is patterned to form a first opening and reveal a part of the first conductive layer, and a third insulation layer is formed on the first opening sidewall to form a second opening. The first conductive layer and the first insulation layer beneath the second opening are etched to expose the substrate surface, and a spacer is formed on the second opening sidewall. A source region is formed in the exposed substrate and a source line with a concave surface is formed in the second opening. A mask layer is formed on the source line concave surface.
Vanguard International Semiconductor Corporation
H H
H01L H01L
inventional inventional
Jui-Hsiang Yue-Feng Ing-Ruey
Yang Chen Liaw