Perpendicular magnetic tunnel junction structure
In a particular illustrative embodiment, a method of fabricating a semiconductor device is disclosed that includes forming a metal layer over a device substrate, forming a via in contact with the metal layer, and adding a dielectric layer above the via. The method further includes etching a portion of the dielectric layer to form a trench area, and depositing a perpendicular magnetic tunnel junction (MTJ) structure within the trench area.
QUALCOMM Incorporated
H G H G G
H01L G11C H01L G11C G11C
inventional inventional inventional inventional inventional
Xia
Li