Myers Bigel Sibley & Sajovec, P.A.
Integrated circuit memory systems and program methods thereof including a magnetic track memory array using magnetic domain wall movement
Provided are nonvolatile memory devices and program methods thereof, an integrated circuit memory system includes a memory array comprising at least one magnetic track, each of the at least one magnetic track including a plurality of magnetic domains and at least one read/write unit coupled thereto, decoding circuitry coupled to the memory array that is operable to select at least one of the magnetic domains, a read/write controller coupled to the memory array that is operable to read data from at least one of the plurality of magnetic domains and to write data to at least one of the plurality of magnetic domains via the at least one read/write unit coupled to each of the at least one magnetic track, and a domain controller coupled to memory array that is operable to move data between the magnetic domains on each of the at least one magnetic track.
Samsung Electronics Co., Ltd.
G G G
G11C G11C G11C
inventional inventional inventional
Hyun Ho Chul Woo Sang Beom Ho Jung Jong Wan Young Pill Sung Chul
Choi Park Kang Kim Kim Kim Lee