Studebaker & Brackett PC
Manufacturing method for silicon carbide epitaxial wafer and manufacturing method for silicon carbide semiconductor device
A silicon carbide substrate (2) is positioned such that a principal surface of the silicon carbide substrate (2) is parallel to a plurality of injection holes (8) of a horizontal CVD apparatus arranged in a row. Source gas is fed from the plurality of injection holes (8) to epitaxially grow a silicon carbide epitaxial growth layer (10) on the principal surface of the silicon carbide substrate (2). The source gas fed from the plurality of injection holes (8) is divided into a plurality of system lines and controlled individually by separate mass flow controllers. A flow rate of the source gas on the principal surface of the silicon carbide substrate (2) is greater than 1 m/sec.
Mitsubishi Electric Corporation
H H H H C C C H H H C C H C C
H01L H01L H01L H01L C23C C30B C23C H01L H01L H01L C23C C23C H01L C30B C30B
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Akihito
Ohno