Myers Bigel Sibley & Sajovec, P.A.
Methods of forming semiconductor devices with metal silicide using pre-amorphization implants
A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.
Samsung Electronics Co., Ltd.
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Hyo-Seok Chung-Hwan Je-Hyung Chul-Sung Sang-Bom Jeong-Ik Dae-Yong Sang-Woo
Choi Shin Ryu Kim Kang Kim Kim Lee