Cantor Colburn LLP
Integrating nanosheet transistors, on-chip embedded memory, and extended-gate transistors on the same substrate
Embodiments of the invention are directed to methods of fabricating devices on a substrate. A non-limiting example of the method includes performing memory fabrication operations to form a non-volatile memory device in a first region of the substrate, wherein the memory fabrication operations include forming a first region of a nanosheet stack over the first region of the substrate. The first region of the nanosheet stack includes nanosheet layers of a first type of semiconductor material alternating with nanosheet layers of a second type of semiconductor material. A first portion of the first region of the nanosheet stack is replaced with a control gate of the non-volatile memory device, and a charge trapping region of the non-volatile memory device is provided under the control gate.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Kangguo Ruilong Juntao Julien
Cheng Xie Li Frougier