Robinson Intellectual Property Law Office
Semiconductor device and method for manufacturing semiconductor device for adjusting threshold thereof
A manufacturing method of a semiconductor device in which the threshold is adjusted is provided. In a semiconductor device including a plurality of transistors arranged in a matrix each including a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and a charge trap layer between the gate electrode and the semiconductor, electrons are trapped in the charge trap layer by performing heat treatment and, simultaneously, keeping a potential of the gate electrode higher than that of the source or drain electrode for 1 second or more. By this process, the threshold increases and Icut decreases. A circuit that supplies a signal to the gate electrode (e.g., word line driver) is provided with a selection circuit formed of an OR gate, an XOR gate, or the like, whereby potentials of word lines can be simultaneously set higher than potentials of bit lines.
Semiconductor Energy Laboratory Co., Ltd.
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Toshihiko Yasumasa Takayuki Shunpei Tetsuhiro Yasuhiko Kiyoshi
Takeuchi Yamane Inoue Yamazaki Tanaka Takemura Kato