WPAT, P.C., Intellectual Property Attorneys
Backside illuminated image sensor and method of manufacturing the same
A backside illuminated (BSI) image sensor comprises a semiconductor substrate having a first surface and a second surface opposite to the first surface; a photosensitive element in the semiconductor substrate; a gate structure partially over the first surface of the semiconductor substrate; and a temporary carrier depository in proximity to the first surface of the semiconductor substrate, wherein the gate structure has a plug portion extending from the first surface toward the second surface. The plug portion of the gate structure helps to increase the charge transfer efficiency so as to improve quantum efficiency of the BSI image sensor.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Yung-Lung Tsung-Han Yun-Wei Hsin-Chi Chun-Hao Kuo-Cheng
Hsu Tsai Cheng Chen Chou Lee