JCIPRNET
Memory structure having transistors and capacitor and manufacturing method thereof
A memory structure including first and second transistors, an isolation structure and a capacitor and a manufacturing method thereof are provided. The first and second transistors are disposed on the substrate. The isolation structure is disposed in the substrate between the first and second transistors. The capacitor is disposed between the first and second transistors. The capacitor includes a body portion and first and second extension portions. The first and second extensions are extended from the body portion into the substrate at two sides of the isolation structure and connected to the source/drain regions of the first and the second transistors, respectively. The widths of first and second extension portions are decreased downward from a top surface of the isolation structure.
Powerchip Semiconductor Manufacturing Corporation
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Chen-Tso Yi-Nung Yu-An Bo-An Po-Yi Shih-Ping Shih-Siang
Han Lin Chen Tsai Wu Lee Chen