Ladas & Parry
Method for maintaining the resistance of a high resistive polysilicon layer for a semiconductor device
 A method for depositing a passivation layer on a semiconductor structure having a high resistance value polysilicon layer formed thereon while maintaining the high resistance value thereof and comprises sequentially depositing a silicon oxide layer and a silicon nitride layer, on a high resistance value polysilicon layer of a partially completed semiconductor structure to form a passivation layer thereover. The passivation layer including the silicon oxide layer and the silicon nitride layer is annealed with oxygen plasma in a chamber. The annealed passivation layer is then heated in the presence of a conditioning gas in the chamber to thereby maintaining the resistance of the high resistance value polysilicon layer. 
Hyundai Electronics Industries Co., Ltd.
H Y H Y Y H H Y
H01L Y10S H01L Y10S Y10S H01L H01L Y10S
inventional additional inventional additional additional additional inventional additional
Hee K. Jung T. Hyung C. Yong K.
Cheon Kim Hah Baek