Knobbe, Martens, Olson & Bear, LLP
Method for forming silicon-boron binary compound layer as boron diffusion source in silicon electronic device
 The present invention is related to a method for fabricating a silicon electronic device having a boron diffusion source layer, includes steps of: a) providing a silicon substrate; b) depositing a silicon layer on said silicon substrate; and c) growing a silicon-boron binary compound layer on said silicon layer as said boron diffusion source. When the Si-B layer is formed by a UHV/CVD process according to the present invention, the boron concentration in the Si-B binary compound layer will be extraordinary high (up to 1.times.10.sup.21 to 5.times.10.sup.22 atoms/cm.sup.3). 
National Science Council
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Chun-Yen Tung-Po Tan-Fu
Chang Chen Lei