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Semiconductor device and manufacturing method of the same
A semiconductor device may include a nitride semiconductor layer, an insulation gate section, and a heterojunction region, wherein the nitride semiconductor layer may include an n-type vertical drift region, a p-type channel region adjoining the vertical drift region, and an n-type source region separated from the vertical drift region by the channel region, wherein the insulation gate section is opposed to a portion of the channel region that separates the vertical drift region and the source region, the heterojunction region is in contact with at least a part of a portion of the vertical drift region that is disposed at the one of main surfaces, and the heterojunction region is an n-type nitride semiconductor or an i-type nitride semiconductor having a bandgap wider than a bandgap of the vertical drift region.
TOYOTA JIDOSHA KABUSHIKI KAISHA
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Masakazu Hiroyuki Hidemoto Tomohiko
Kanechika Ueda Tomita Mori