Haynes and Boone, LLP
Resistive switching random access memory with asymmetric source and drain
The present disclosure provides one embodiment of a resistive random access memory (RRAM) structure. The RRAM structure includes a resistive memory element formed on a semiconductor substrate and designed for data storage; and a field effect transistor (FET) formed on the semiconductor substrate and coupled with the resistive memory element. The FET includes asymmetric source and drain. The resistive element includes a resistive material layer and further includes first and second electrodes interposed by the resistive material layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Hsia-Wei Yu-Wen Kuo-Chi Wen-Ting Chih-Yang Chin-Chieh
Chen Liao Tu Chu Chang Yang