Slater Matsil, LLP
Semiconductor device structure and method for forming the same
A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a trench passing through the dielectric layer. The method includes forming a gate stack in the trench. The method includes performing a hydrogen-containing plasma process over the gate stack. The method includes removing a top portion of the gate stack to form a first recess surrounded by the gate stack and the dielectric layer. The method includes forming a cap layer in the first recess to fill the first recess.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Po-Chi Yi-Cheng Chai-Wei Ya-Lan Jung-Jui
Wu Chao Chang Chang Li