Brinks Hofer Gilson & Lione
Spin-valve magnetoresistive element
 A spin-valve magnetoresistive element includes a hard bias layer formed on a pinned magnetic layer with a non-magnetic layer therebetween, and thus the magnetic field from the hard bias layer is efficiently applied into a free magnetic layer. Also, the pinned magnetic layer is not influenced by the hard bias layer because of the interposition of the non-magnetic layer. Accordingly, the pinned magnetic layer and the free magnetic layer are properly put into single magnetic domain states, and thus, Barkhausen noise is reduced and satisfactory micro-track-asymmetry can be obtained. 
Alps Electric Co., Ltd.
H H B B G G G G
H01F H01L B82Y B82Y G01R G11B G11B G11B
inventional inventional inventional inventional inventional additional additional additional
Toshinori Masamichi
Watanabe Saito