Antonelli, Terry, Stout & Kraus, LLP.
Nonvolatile semiconductor storage device
A nonvolatile memory device of the present invention performs a programming operation by accumulating a charge in certain capacitance which is provided for each programming memory cell and injecting hot electrons generated when the charge is discharged via the memory cell into a floating gate. Thus, a variation in a programming characteristic of the nonvolatile semiconductor memory device is reduced, thereby realizing high-speed programming operation.
Hitachi Ulsi Systems Co., Ltd. Hitachi Device Engineering Co., Ltd. Renesas Technology Corp.
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Michitaro Takayuki Hideaki Keiichi Atsushi Shoji Takashi Naoki Yoshinori Shunichi
Kanamitsu Kawahara Kurata Yoshida Nozoe Kubono Kobayashi Kobayashi Takase Saeki