Eschweiler & Potashnik, LLC
Metal landing method for RRAM technology
The present disclosure relates to an integrated circuit having an interconnect wire contacting an upper electrode of the RRAM (resistive random access memory) device, and a method of formation. In some embodiments, the integrated circuit comprises an RRAM device having a dielectric data storage layer disposed between a lower electrode and an upper electrode. An interconnect wire contacts an upper surface of the upper electrode, and an interconnect via is arranged onto the interconnect wire. The interconnect via is set back from one or more outermost sidewalls of the interconnect wire. The interconnect wire has a relatively large size that provides for a good electrical connection between the interconnect wire and the upper electrode, thereby increasing a process window of the RRAM device.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chin-Chieh Hsia-Wei Wen-Ting Kuo-Chi Jen-Sheng Yu-Wen Chih-Yang
Yang Chen Chu Tu Yang Liao Chang