Apparatus and methods for forming a modulation doped non-planar transistor
Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed.
Intel Corporation
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Willy Ravi Marko Mantu Jack Gilbert
Rachmady Pillarisetty Radosavljevic Hudait Kavalieros Dewey