Birch, Stewart, Kolasch & Birch, LLP
Method of forming a shallow trench isolation structure
A method of forming a STI structure. First, a substrate having a trench is provided. Next, a conformable silicon oxide layer is grown on the surface of the trench by wet oxidation using single wafer process to serve as a liner oxide layer. Thereafter, the substrate and the silicon oxide layer is in-situ annealed. Finally, an insulating layer is completely filled into the trench.
Silicon Integrated Systems Corp.
H
H01L
inventional
Chian-Kai Fung-Hsu Jui-Ping
Huang Cheng Li