Column redundancy circuit for semiconductor memory
The present invention relates to a column redundancy circuit for a semiconductor memory whose memory array is divided into a plurality of array units to be properly operated at a high frequency. The plurality of array units in the memory array include a plurality of normal memory cells and a plurality of redundancy memory cells. The normal data stored in the normal memory cells and the redundancy data stored in the redundancy memory cells are outputted to a switch unit. A column redundancy unit outputs a redundancy enable signal according to a column address, a row address and a fuse short state. According to the logical state of the redundancy enable signal, the switch unit selects the normal data or redundancy data from the memory array, and outputs it to a main amplifier.
Hynix Semiconductor, Inc.
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additional inventional
Ju Han Hong Beom San Ha
Kim Pyeon Park