Semiconductor device with robust polysilicon fuse
A new method is provided to create a polysilicon fuse. The invention provides for applying a first oxide plasma treatment to the surface of the created polysilicon fuse, creating a thin layer of native oxide over the surface of the created polysilicon fuse, followed by a DI water rinse. This thin layer of native oxide is made more robust by applying a second oxide plasma treatment to exposed surfaces, this more robust layer of native oxide protects the polysilicon fuse during subsequent processing steps of wet photoresist and polymer removal.
Taiwan Semiconductor Manufacturing Company
H H H
H01L H01L H01L
inventional inventional additional
Chen-Shiang Yuan-Ko Yuan-Pang Ping-Hung Fei-Yun
Shieh Hwang Lee Yin Chen