Green, Howard & Mughal LLP
Germanium-based quantum well devices
A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel. A group III-V barrier layer adds strain to the channel. Graded silicon germanium layers above and below the channel region improve performance. Multiple gate dielectric materials allow use of a high-k value gate dielectric.
Intel Corporation
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Ravi Been-Yih Jack T. Benjamin Niloy Roza Marko Gilbert Matthew V. Robert S. Willy
Pillarisetty Jin Kavalieros Chu-Kung Mukherjee Kotlyar Radosavljevic Dewey Metz Chau Rachmady