Weaver Austin Villeneuve & Sampson LLP
Rare earth metal surface-activated plasma doping on semiconductor substrates
Methods of doping semiconductor substrates using deposition of a rare earth metal-containing film such as an yttrium-containing film, and annealing techniques are provided herein. Rare earth metal-containing films are deposited using gas, liquid, or solid precursors without a bias and may be deposited conformally. Some embodiments may involve deposition using a plasma. Substrates may be annealed at temperatures less than about 500° C.
Lam Research Corporation
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Reza Yunsang
Arghavani Kim