Hoffman Warnick LLC
Method of forming semiconductor material in trenches having different widths, and related structures
The present disclosure relates to methods for forming fill materials in trenches having different widths and related structures. A method may include: forming a first fill material in a first and second trench where the second trench has a greater width than the first trench; removing a portion of the first fill material from each trench and forming a second fill material over the first fill material; removing a portion of the first and second fill material within the second trench; and forming a third fill material in the second trench. The structure may include a first fill material in trenches having different widths wherein the upper surfaces of the first fill material in each trench are substantially co-planar. The structure may also include a second fill material on the first fill material in each trench, the second fill material having a substantially equal thickness in each trench.
GLOBALFOUNDRIES INC.
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Haifeng Daniel J. Pei Jinping Haigou Jiehui Haiting Chih-Chiang
Sheng Jaeger Liu Liu Huang Shu Wang Chang