Koppel, Patrick, Heybl & Philpott
Semiconductor device and manufacturing method thereof
A semiconductor device and its manufacturing method are disclosed. The semiconductor device comprises a gate, and source and drain regions on opposite sides of the gate, wherein a portion of a gate dielectric layer located above the channel region is thinner than a portion of the gate dielectric layer located at the overlap region of the drain and the gate. The thicker first thickness portion may ensure that the device can endure a higher voltage at the drain to gate region, while the thinner second thickness portion may ensure excellent performance of the device.
Semiconductor Manufacturing International (Beijing) Corporation
H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional additional inventional inventional inventional additional inventional
Jinhua
Liu