Sughrue, Mion, Zinn, Macpeak & Seas
Laminated substrate for semiconductor device and manufacturing method thereof
 A method for fabricating a laminated substrate for a semiconductor device having a high voltage power device and a low voltage element formed in a region isolated from the power device with a P-N junction. The region for the low voltage element is formed on a buried layer of P type formed in the region of N type in which the power device is formed and surrounded by a isolating region of P type reaching the buried layer from the surface of the laminated substrate. 
NEC Corporation
H H Y H
H01L H01L Y10S H01L
inventional inventional additional inventional
Kensuke Hiroaki
Okonogi Kikuchi