Haynes and Boone, LLP
Technique to enhance the yield of copper interconnections
A method of forming an oxide free copper interconnect, comprising the following steps. A substrate is provided and a patterned dielectric layer is formed over the substrate. The patterned dielectric layer having an opening exposing a portion of the substrate. The opening having exposed sidewalls. A copper seed layer is formed over the sidewalls of the opening. The copper seed layer is subjected to an electrochemical technique to eliminate any copper oxide formed over the copper seed layer. A bulk copper layer is electrochemically plated over the copper-oxide-free copper seed layer, filling the opening and forming the oxide-free copper interconnect.
Taiwan Semiconductor Manufacturing Company, Ltd.
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H01L H01L C25D C25D H01L
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Chung-Liang Shaulin
Chang Shue