Method for forming electrostatic discharge (ESD) protection transistors
 A method is provided for selective oxidation on source/drain regions of transistors on an integrated circuit. The method includes the steps of a) incorporating a neutral species into first kind of the source/drain regions, and b) forming oxidation regions over the first kind of source/drain regions and second kind of the source/drain regions, wherein the oxidation regions over the second kind are thicker than the oxidation regions over the first kind. 
National Science Council
Y H
Y10S H01L
additional inventional
Horng-Chih Tiao-Yuan
Lin Huang