Oliff PLC
Terminal structure and semiconductor device
The present invention relates to a terminal structure comprising: a base material 10; an external electrode 20 formed on the base material; an insulating coating layer 30 formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under-bump metal layer 70 filling the opening and covering part of the insulating coating layer; and a dome-shaped bump 85 covering the under-bump metal layer, wherein in a cross section along a lamination direction, a height Hbm at which the bump has a maximum diameter (Lbm) is lower than a maximum height Hu of the under-bump metal layer.
TDK CORPORATION
H H H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
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Hisayuki Yuhei Hideyuki Kenichi Makoto
Abe Horikawa Seike Yoshida Orikasa