Harness, Dickey & Pierce, P.L.C.
Method of manufacturing a gallium nitride substrate
In a method of manufacturing a GaN substrate, a capping layer may be formed on a first surface of a silicon substrate. A buffer layer may be formed on a second surface of the silicon substrate. The second surface may be opposite the first surface. A GaN substrate may be formed on the buffer layer by performing a hydride vapor phase epitaxy (HVPE) process. The capping layer and the silicon substrate may be removed.
Samsung Electronics Co., Ltd.
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Young-Soo Young-Jo Mi-Hyun Jun-Youn Sam-Mook
Park Tak Kim Kim Kang