Westerman, Hattori, Daniels & Adrian, LLP
Semiconductor device and manufacturing method thereof
Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a semiconductor substrate; forming a first interlayer insulating film on the first element layer; forming a second element layer on the first interlayer insulating film; forming a second interlayer insulating film on the second element layer; forming a hole resist pattern on the second interlayer insulating film; conducting a first etching for forming of holes by etching the second interlayer insulating film; and conducting a second etching for extending of holes to the first element layer by etching the first interlayer insulating film.
Fujitsu Semiconductor Limited
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inventional inventional additional inventional inventional inventional
Kouichi Hideaki Yukimasa
Nagai Kikuchi Miyazaki