Lee & Morse P.C.
Semiconductor device with field effect transistors and method of fabricating the same
Provided is a semiconductor device including a substrate with an active pattern, a gate electrode crossing the active pattern, a source/drain region in an upper portion of the active pattern at a side of the gate electrode, the source/drain region including a recess region at an upper region thereof, a contact electrically connected to the source/drain region, the contact including a lower portion provided in the recess region, and a metal silicide layer provided at a lower region of the recess region and between the source/drain region and the contact.
SAMSUNG ELECTRONICS CO., LTD.
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inventional inventional inventional inventional additional inventional
Hwichan Hyoseok Yoonhae Doo-Young Heungsik Chulsung
Jun Choi Kim Lee Park Kim