Anova Law Group, PLLC
Fin field-effect transistor
A fin field-effect transistor (fin-FET) includes a substrate having a plurality of discrete fin structures thereon; a chemical oxide layer on at least a sidewall of a fin structure; a doped layer containing doping ions on the chemical oxide layer; and a doped region in the fin structure containing doping ions diffused from the doping ions in the doped layer.
Semiconductor Manufacturing International (Shanghai) Corporation Semiconductor Manufacturing International (Beijing) Corporation
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Yong
Li