Oblon, McClelland, Maier & Neustadt, L.L.P.
Multilayer structure, device using the same, method for producing the multilayer structure, and method for producing the device
Provided are a novel multilayer structure that can be used to protect a device and a device using the multilayer structure. The disclosed multilayer structure is a multilayer structure including a substrate and a barrier layer stacked on the substrate. The 3% strain tension of the substrate in at least one direction is at least 2000 N/m. The barrier layer contains a reaction product (R). The reaction product (R) is a reaction product formed by a reaction at least between a metal oxide (A) and a phosphorus compound (B). In an infrared absorption spectrum of the barrier layer in a range of 800 to 1400 cm−1, a wavenumber (n1) at which maximum infrared absorption occurs is in a range of 1080 to 1130 cm−1. A metal atom constituting the metal oxide (A) is essentially an aluminum atom.
KURARAY CO., LTD.
Y B H B Y H B B B H H H H H B H B B B
Y10T B32B H01L B32B Y02E H01L B32B B32B B32B H01L H01L H01L H01L H01L B32B H01L B32B B32B B32B
additional additional inventional inventional additional inventional inventional additional additional additional inventional inventional inventional additional inventional inventional additional additional additional
Tatsuya Masakazu Noboru Kentaro Ryoichi Manabu
Oshita Nakaya Higashida Yoshida Sasaki Shibata