Vierra Magen Marcus LLP
Methods and apparatus for three-dimensional NAND non-volatile memory devices with side source line and mechanical support
A method of fabricating a monolithic three dimensional memory structure is provided. The method includes forming a stack of alternating word line and dielectric layers above a substrate, forming a source line above the substrate, forming a memory hole extending through the alternating word line and dielectric layers and the source line, and forming a mechanical support element on the substrate adjacent to the memory hole.
SanDisk Technologies LLC
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Johann Chun Jin
Alsmeier Ge Liu