Patterson & Sheridan, LLP
Power semiconductor device
A power semiconductor device according to an embodiment includes an element portion in which MOSFET elements are provided and a termination portion provided around the element portion, and has pillar layers provided respectively in parallel to each other in a semiconductor substrate. The device includes a first trench and a first insulation film. The first trench is provided between end portions of the pillar layers, in the semiconductor substrate at the termination portion exposed from a source electrode of the MOSFET elements. The first insulation film is provided on a side surface and a bottom surface of the first trench.
Kabushiki Kaisha Toshiba
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Syotaro Masaru Hiroaki Hiroshi
Ono Izumisawa Yamashita Ohta