Craig & Antonelli
Gallium arsenide infrared light emitting diode
 A gallium arsenide infrared-light emitting diode in which an Si-doped p-type GaAs layer is formed on an Si-doped n-type GaAs layer which is performed on an n-type GaAs substrate doped with at least one selected from Sn, Se, Te and S. 
Hitachi, Ltd.
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Yasutoshi Mitsuru Tadahiko
Kurihara Ura Miyoshi