Sughrue Mion, PLLC
Semiconductor ultraviolet light emitting device having improved light extraction efficiency
A semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlxInyGa1-x-yN (0≤x+y≤1, 0≤y<0.15); and a second conductive nitride layer disposed on the active layer and having a second conductive AlGaN layer, in which the plurality of nanorods satisfy 3.5≤n(λ)×D/λ≤5.0, where λ represents a wavelength of light generated by the active layer, n(λ) represents a refractive index of the plurality of nanorods at a wavelength of λ, and D represents diameters of the plurality of nanorods.
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION SAMSUNG ELECTRONICS CO., LTD.
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Jin Sub Dong Hyun Eui Joon Jung Sub Kyung Wook Gun Do In Su Jeong Hwan
Lee Lee Yoon Kim Hwang Lee Shin Jang