Gibb & Riley, LLC
Multi-step insulator formation in trenches to avoid seams in insulators
Methods produce integrated circuit structures that include (among other components) fins extending from a first layer, source/drain structures on the fins, source/drain contacts on the source/drain structures, an insulator on the source/drain contacts defining trenches between the source/drain contacts, gate conductors in a lower portion of the trenches adjacent the fins, a first liner material lining a middle portion and an upper portion of the trenches, a fill material in the middle portion of the trenches, and a second material in the upper portion of the trenches. The first liner material is on the gate conductors in the trenches.
GLOBALFOUNDRIES U.S. Inc.
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Huy Chih-Chiang Jiehui Haigou Jinping Asli
Cao Chang Shu Huang Liu Sirman