Flehr, Hohbach, Test, Albritton & Herbert
Semiconductor photodetector element
 A semiconductor photodetector element has a three-dimensional multi-layer structure including a photoconductive layer for photoelectric conversion, a layer for binary conversion and amplification and a layer including a redundancy circuit so that the need for external reset and clock inputs can be obviated and correct image information can be expected even if there are defective cells among the photodetection conversion cells. 
Sharp Kabushiki Kaisha
H H
H01L H01L
inventional inventional
Masaru Tutomu Masaru
Shiraishi Nakamura Nawaki