McDermott Will & Emery LLP
Nitride semiconductor light emitting device and method of manufacturing the same
A nitride semiconductor light emitting device includes a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween. N-type and p-type electrodes are electrically connected to the n-type and p-type nitride semiconductors, respectively. An n-type ohmic contact layer is formed between the n-type nitride semiconductor layer and the n-type electrode and has a first layer of a material In and a second layer formed on the first layer and of a material containing W. The nitride semiconductor light emitting device has thermal stability and excellent electrical characteristics without heat treatment.
Samsung Electronics Co., Ltd.
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Jin Hyun Yu Seung Hyun Soo Joon Seop Ki Man Cheol Soo
Lee Kim Kim Kwak Kang Sone