Haynes and Boone, LLP
Photoresist having decreased outgassing
Provided is a method of fabricating a semiconductor device. A substrate is provided. A material layer is formed over the substrate. A photoresist layer is formed over the material layer. The photoresist layer contains a polymer. The polymer includes an acid labile group (ALG) that is linked to a plurality of carboxylic acid function groups. The photoresist layer is then patterned using a lithography process, for example an extreme ultraviolet (EUV) lithography process.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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inventional inventional inventional additional
Ching-Yu Wei-Han
Chang Lai