Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof
A dual gate oxide semiconductor TFT substrate is made by utilizing a halftone mask to implement one photo process, which accomplishes patterning of an oxide semiconductor layer and forms an oxide conductor layer with ion doping process. Patterning of a bottom gate isolation layer and a top gate isolation layer are performed at the same time with one photo process. A first top gate, a first source, a first drain, a second top gate, a second source, and a second drain are formed at the same time with one photo process. Patterning of a flat layer, a passivation layer, and a top gate isolation layer are performed at the same time with one photo process. As such, the number of photo processes applied to manufacture the TFT substrate is reduced to five and the manufacturing process is shortened to thereby raise the production efficiency and lower the production cost.
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
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Hejing Shimin Xiaowen Longqiang Wenhui Chihyu Chihyuan
Zhang Ge Lv Shi Li Su Tseng