Haynes and Boone, LLP
Device and method for forming Fins in integrated circuitry
A semiconductor FinFET device includes a plurality of gate lines formed in a first direction, and two types of fin structures. A first type of fin structures is formed in a second direction, and a second type of fin structures formed perpendicular to the first type of fin structures. A contact hole couples to one or more of the second type of fin structures.
Taiwan Semiconductor Manufacturing Company, Ltd.
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inventional inventional inventional
Chien-Hsun Ming-Feng Chih-Sheng Yi-Tang
Wang Shieh Chang Lin