Hoser, Patterson & Sheridan
Method for planarizing a copper interconnect structure
A method of planarizing a copper interconnect structure using an atomic layer removal (ALR) technique to planarize a copper layer. In one embodiment, the ALR process performs a plurality of cycles, each cycle having a period of forming a film of copper fluoride on the copper layer and a period of removing the film of copper fluoride. The ALR process is repeated until a barrier layer beneath the copper layer is then etched to expose a dielectric material. The remaining copper forms a conductive line that is substantially coplanar with the dielectric material.
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Wai-Fan Hui Chun
Yau Chen Yan