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Optoelectronic device having a boron nitride alloy electron blocking layer and method of production
An optoelectronic device a substrate, a first doped contact layer arranged on the substrate, a multiple quantum well layer arranged on the first doped contact layer, a boron nitride alloy electron blocking layer arranged on the multiple quantum well layer, and a second doped contact layer arranged on the boron nitride alloy electron blocking layer.
KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
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Wenzhe Xiaohang Haiding
Guo Li Sun