Sawyer Law Group LLP
Backside exposure of desired nodes in a multi-layer integrated circuit
 Aspects for exposing local areas for desired nodes in a multi-layer integrated circuit from the backside are described. In an exemplary method aspect, the method includes removing a predetermined portion of a first backside layer, opening chosen local areas with focused ion beam etching through at least the first backside layer, and exposing a desired node in a metal layer lower than the first backside layer with reactive ion etching. The method further includes removing the predetermined portion by performing reactive ion etching to a predetermined stop point. Alternatively, the first backside layer is mechanically polished to a predetermined thickness. Additionally, the method includes utilizing a high current ion beam during the focused ion beam etching. 
Advanced Micro Devices, Inc.
H H
H01L H01L
inventional additional
Xia Daniel
Li Yim