Tung & Associates
Method for determining a cause for defects in a film deposited on a wafer
 A method for determining a cause for defect formation in an insulating material layer deposited on an electrically conductive layer on a wafer surface is disclosed. In the method, on top of a semi-conducting wafer which has a first insulating material layer deposited, a second insulating material layer is deposited to replace an electrically conductive layer. A third insulating material layer is then deposited on top of the second insulating layer and a water jet which has a high pressure is scanned across a top surface of the third insulating layer with the wafer held in a stationary position. Surface defects are then counted in the predetermined path on the top surface of the third insulating layer for determining the cause for defect formation. When no defects are found, the formation is attributed to electrostatic discharges occurring in the metal conductive layer. 
Taiwan Semiconductor Manufacturing Co., Ltd
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H01L G01N H01L H01L
additional additional inventional inventional
Chao-Hsin Renn-Shyan Chih-Chien Der-Fang
Chang Yeh Hung Huang