Lee & Morse, P.C.
Semiconductor device
Provided is a semiconductor device, including a substrate including a device isolation layer and an active region isolated by the device isolation layer; a trench in the active region; a gate electrode filling at least a portion of the trench; a recess in the substrate at one side of the gate electrode, the recess overlapping a portion of the device isolation layer and the active region; and a lower contact plug filling the recess.
SAMSUNG ELECTRONICS CO., LTD.
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Jong-Un Jun-Soo Sang-Il
Kim Kim Han