Nixon & Vanderhye P.C.
Photoelectric conversion device and method of producing the same
A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0×1016 to 2.0×1017 cm−3.
Sharp Kabushiki Kaisha
H Y Y H Y
H01L Y02P Y02E H01L Y02E
inventional additional additional inventional additional
Yasuaki Takanori Yoshiyuki
Ishikawa Nakano Nasuno