Oliff & Berridge, PLC
Method of forming an insulating film having SI-C, SI-O and SI-H bonds to cover wiringlines of a semiconductor device
An insulating film which enables not only to obtain a good film quality but to achieve an excellent filling property, thick film formation and planarization simultaneously, an insulating film forming coating solution for forming the insulating film, and a method of manufacturing the insulating film are set forth. An insulating film forming coating solution containing as a main component a solution of a polymer obtained by co-hydrolysis of trialkoxysilane expressed by a general formula, SiH(OR)3&#8212;, methyltrialkoxysilane expressed by a general formula, SiCH3(OR)3&#8212;, and tetraalkoxysilane expressed by a general formula, Si(OR)4 is coated on a semiconductor substrate (1) having a step portion, and after it is heated and dried in an inert gas atmosphere, an insulating film (6) which is composed of a silane-derived compound expressed by a general formula, SiHx(CH3)yO2&#8722;(x+y)/2, where, 0<x<1, 0<y<1, x+y&lE;1 is formed.
Kawasaki Microelectronics, Inc.
C H H H H
C09D H01L H01L H01L H01L
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Kyoji Tadashi
Tokunaga Nakano