Trench capacitor with spacer-less fabrication process
A trench capacitor and method of fabrication are disclosed. The SOI region is doped such that a selective isotropic etch used for trench widening does not cause appreciable pullback of the SOI region, and no spacers are needed in the upper portion of the trench.
International Business Machines Corporation
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Xi Geng Chengwen
Li Wang Pei