Anova Law Group, PLLC
Transistor and fabrication method thereof
A method for forming a transistor is provided. The method includes providing a semiconductor substrate, and forming a dielectric layer on the semiconductor substrate. The dielectric layer has a gate structure recess. The method also includes forming a work function layer on a bottom and sidewalls of the gate structure recess; performing an ion implantation on the work function layer; and forming a gate layer on the work function layer after the ion implantation.
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
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Fei Jianhua Yong
Zhou Ju Li