Lowe Hauptman & Ham, LLP
Fin held effect transistor
A FinFET is described, the FinFET includes a substrate including a top surface and a first insulation region and a second insulation region over the substrate top surface comprising tapered top surfaces. The FinFET further includes a fin of the substrate extending above the substrate top surface between the first and second insulation regions, wherein the fin includes a recessed portion having a top surface lower than the tapered top surfaces of the first and second insulation regions, wherein the fin includes a non-recessed portion having a top surface higher than the tapered top surfaces. The FinFET further includes a gate stack over the non-recessed portion of the fin.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chu-Yun Shu-Tine Hung-Ming Shin-Yeh Hung-Ta
Fu Yang Chen Huang Lin