Haynes and Boone, LLP
Orientation layer for directed self-assembly patterning process
Disclosed is a method of forming a semiconductor device using a self-assembly (DSA) patterning process. The method includes forming a patterned feature over a substrate; applying an orientation material that includes a first polymer and a second polymer over the substrate, wherein the first polymer has a first activation energy and the second polymer has a second activation energy; baking the substrate at first temperature thereby forming a first orientation layer that includes the first polymer; baking the substrate at second temperature thereby forming a second orientation layer that includes the second polymer; and performing a directed self-assembly (DSA) process over the first and the second orientation layers.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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H01L H01L B81C H01L H01L G03F H01L H01L
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Ching-Yu Kuan-Hsin Tsung-Han
Chang Lo Ko