Scully, Scott, Murphy & Presser
Use of thin SOI to inhibit relaxation of SiGe layers
High-quality, metastable SiGe alloys are formed on SOI substrates having an SOI layer of about 500 Å or less, the SiGe layers can remain substantially fully strained compared to identical SiGe layers formed on thicker SOI substrates and subsequently annealed and/or oxidized at high temperatures. The present invention thus provides a method of ‘frustrating’ metastable strained SiGe layers by growing them on thin, clean and high-quality SOI substrates.
International Business Machines Corporation
H C H H H Y C
H01L C30B H01L H01L H01L Y10T C30B
inventional inventional inventional inventional inventional additional inventional
Huajie Keith E. Stephen W. Devendra K.
Chen Fogel Bedell Sadana