Sughrue Mion, PLLC
Semiconductor device and method of fabricating the same
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device comprises a first trench formed in a substrate; a first insulating film formed on sidewalls and a bottom surface of the first trench and not formed on a top surface of the substrate; and a first conductive film formed on the first insulating film to partially fill the first trench, wherein the first insulating film comprises a first portion which overlaps the first conductive film and a second portion which does not overlap the first conductive film, wherein the second portion comprises first fixed charges.
SAMSUNG ELECTRONICS CO., LTD.
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KiHong JuEun HeeDon BongHyun
Nam Kim Hwang Kim