McDermott Will & Emery LLP
Non-volatile semiconductor memory device
Charge is trapped into a charge trapping region of one of two reference cells so as to achieve a state equivalent to memory cell characteristics having a smallest amount of current. Charge is trapped into a charge trapping region of the other reference cell so as to achieve a state equivalent to memory cell characteristics having a largest amount of current. Currents output from these reference cells are averaged by a current averaging circuit, and the resultant average current is output as a reference current R_REF 1. 
Matsushita Electric Industrial Co., Ltd.
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inventional additional inventional
Toshiki
Mori