Harness, Dickey & Pierce, P.L.C.
Wiring structure and method of forming the same, and semiconductor device including the wiring structure
In a method of forming a wiring structure, a first mask having a first opening including a first portion extending in a second direction and a second portion extending in a first direction is formed. A second mask including a second opening overlapping the first portion of the first opening and third openings each overlapping the second portion of the first opening is designed. The second mask is fabricated to include a fourth opening by enlarging the second opening. The fourth opening overlaps a boundary between the first and second portions of the first opening. An insulating interlayer is etched using the first and second masks to form first and second via holes corresponding to the fourth and third openings, and a trench corresponding to the first opening. First and second vias and a wiring are formed to fill the first and second via holes and the trench.
Samsung Electronics Co., Ltd.
H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional additional additional additional inventional inventional inventional inventional inventional inventional inventional
Yeon-Joo Hyo-Seon Sang-Chul Jun-Jung Kyoung-Pil Jeong-Hoon Joon-Nyung In-Hwan Jin-Hyeung
Kim Lee Lee Kim Park Ahn Lee Kim Park