Hauptman Ham, LLP
Memory controller, memory device and method of operating
A memory controller has a bit line driver configured to supply a selected bit line voltage to a selected bit line and an unselected bit line voltage to an unselected bit line. The selected bit line is coupled to a selected memory cell, and the unselected bit line is coupled to an unselected memory cell. The memory controller further has a word line driver configured to supply a selected word line voltage to a selected word line and an unselected word line voltage to an unselected word line. The selected word line is coupled to the selected memory cell, and the unselected word line is coupled to the unselected memory cell. The unselected bit line voltage is equal to or higher than a difference between the unselected word line voltage and a threshold voltage of the unselected memory cell.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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G11C G11C G11C
inventional inventional inventional
Gu-Huan Cheng-Hsiung Yue-Der
Li Kuo Chih