Maschoff Brennan
Semiconductor device and method for manufacturing the same
A semiconductor device includes a substrate, a gate stack, a first gate spacer and a second gate spacer, a first source/drain region and a second source/drain region, a first conductive feature and a second conductive feature, and a first contact plug and a second contact plug. The first conductive feature and the second conductive feature are over the first source/drain region and the second source/drain region, respectively. The first conductive cap and the second conductive cap are over the first conductive feature and the second conductive feature, respectively. The first contact plug and the second contact plug are over the first conductive cap and the second conductive cap, respectively, in which the first contact plug is separated from the first gate spacer, and the second contact plug is in contact with a sidewall and a top surface of the second gate spacer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Yu-Ming Chih-Hao Jia-Chuan Wei-Hao Chia-Hao
Lin Wang You Wu Chang