Volentine & Whitt, PLLC
Hard mask composition, carbon nanotube layer structure, pattern forming method, and manufacturing method of semiconductor device
A manufacturing method of a semiconductor device includes forming a hard mask layer on a semiconductor substrate using a hard mask composition. Hard mask patterns are formed by patterning the hard mask layer. Semiconductor patterns are formed by etching the semiconductor substrate using the hard mask patterns. The hard mask composition includes a plurality of first carbon nanotubes (CNTs) having a first length, a plurality of second CNTs having a second length, which is at least 3 times the first length, and a dispersing agent in which the first CNTs and the second CNTs are dispersed. The total mass of the first CNTs is 1 to 2.5 times the total mass of the second CNTs.
Samsung Electronics Co., Ltd.
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Yool Yun Seok Seung Hyun Kyoung Sil Yi Seul Seung Yun
Kang Choi Lee Park Kim Yang