Oblon, McClelland, Maier & Neustadt, L.L.P.
Plasma processing apparatus and method
A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.
TOKYO ELECTRON LIMITED
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Manabu Yoshinobu Kazuo Masaru Ryuji Manabu Daisuke Chishio Masashi Naoki Noriyuki Hidetoshi Toshihiro Akira Yohei Kunihiko Hiroki
Sato Ohya Kibi Sugimoto Ohtani Iwata Yano Koshimizu Saito Matsumoto Kobayashi Hanaoka Hayami Koshiishi Yamazawa Hinata Yamazaki