Fitzpatrick, Cella, Harper & Scinto
Semiconductor element, and method of forming silicon-based film
The invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal. The microcrystal is located in at least one interface region of the silicon-based film containing the microcrystal and has no orientation property. Further, the invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal, and the orientation property of the microcrystal changing in a film thickness direction of the silicon-based film containing the microcrystal. Thereby, a silicon-based film having a shortened tact time, an increased film forming rate, and excellent characteristics, and a semiconductor element including this silicon-based film having excellent adhesion and environmental resistance can be obtained.
Canon Kabushiki Kaisha
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Takaharu Shotaro Shuichiro Akira Ryo Masafumi
Kondo Okabe Sugiyama Sakai Hayashi Sano