Glenn Patent Group
Semiconductor light emitting device and method for manufacturing the same
A semiconductor light emitting device and a method for manufacturing the same are disclosed. The semiconductor comprises a light scattering-deflecting layer located on a semiconductor layer having a scraggly surface. Light is deflected due to the difference of refractive index when the light enters the semiconductor layer from the light scattering-deflecting layer, and the light scatters when the light enters the scraggly surface of the semiconductor layer, thereby enabling the semiconductor light emitting device to emit more light so as to increase the light emitting efficiency of the semiconductor light emitting device.
United Epitaxy Company, Ltd.
H
H01L
inventional
Chih-Sung Tzong-Liang Tzer-Perng
Chang Tsai Chen