Haynes and Boone, LLP
Extreme ultraviolet photolithography method with developer composition
The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chin-Hsiang An-Ren Ching-Yu Joy
Lin Zi Chang Cheng