Ingrassia Fisher & Lorenz, P.C.
Integrated circuits having laterally confined epitaxial material overlying fin structures and methods for fabricating same
Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a fin structure overlying a semiconductor substrate. The fin structure defines a fin axis extending in a longitudinal direction perpendicular to a lateral direction and has two fin sidewalls parallel to the fin axis. The method includes forming gate structures overlying the fin structure and transverse to the fin axis. Further, the method includes growing an epitaxial material on the fin structure and confining growth of the epitaxial material in the lateral direction.
GLOBALFOUNDRIES, INC.
H H
H01L H01L
inventional inventional
Jill Xiang Taejoon Jin Ping
Hildreth Hu Han Liu