Oblon, McClelland, Maier & Neustadt, L.L.P.
Three-dimensional semiconductor memory device including slit with lateral surfaces having periodicity
According to one embodiment, it includes a stacked body including N-number of layers (N is an integer of 2 or more) stacked on a semiconductor substrate, opening portions penetrating the stacked body in a stacking direction, columnar bodies respectively disposed in the opening portions, and a slit dividing M-number of layers (M is an integer of 1 or more and (N−2) or less) of the stacked body in a horizontal direction from above, wherein the slit is formed with lateral surfaces respectively having a spatial periodicity in a horizontal plane.
Toshiba Memory Corporation
H H
H01L H01L
inventional inventional
Osamu Kenichi Makoto Hideki Takeshi Hajime Genki Takanobu Hideo Masanari
Matsuura Fujii Watanabe Inokuma Imamura Kaneko Kawaguchi Itoh Wada Fujita