Blakely, Sokoloff, Taylor & Zafman LLP
Double pass formation of a deep quantum well in enhancement mode III-V devices
A quantum well is formed for a deep well III-V semiconductor device using double pass patterning. In one example, the well is formed by forming a first photolithography pattern over terminals on a material stack, etching a well between the terminals using the first photolithography patterning, removing the first photolithography pattern, forming a second photolithography pattern over the terminals and at least a portion of the well, deepening the well between the terminals by etching using the second photolithography pattern, removing the second photolithography pattern, and finishing the terminals and the well to form a device on the material stack.
Intel Corporation
H H H H H H H H B
H01L H01L H01L H01L H01L H01L H01L H01L B82Y
inventional inventional additional inventional additional additional inventional inventional inventional
Marko Mantu K. Benjamin Ravi
Radosavljevic Hudait Chu-Kung Pillarisetty