Hoffman Warnick LLC
Dual stress memory technique method and related structure
A method for providing a dual stress memory technique in a semiconductor device including an nFET and a PFET and a related structure are disclosed. One embodiment of the method includes forming a tensile stress layer over the nFET and a compressive stress layer over the pFET, annealing to memorize stress in the semiconductor device and removing the stress layers. The compressive stress layer may include a high stress silicon nitride deposited using a high density plasma (HDP) deposition method. The annealing step may include using a temperature of approximately 400-1200° C. The high stress compressive silicon nitride and/or the anneal temperatures ensure that the compressive stress memorization is retained in the pFET.
Samsung Electronics Co., Ltd Chartered Semiconductor Manufacturing Ltd International Business Machines Corporation
H H
H01L H01L
inventional inventional
Young Way Sunfei Jun Jung Zhijiong Hung Y. Nivo
Teh Fang Kim Luo Ng Rovedo