Townsend and Townsend and Crew LLP
Method for forming a metal line in a semiconductor device
A semiconductor device includes contact plugs formed in contact holes defined in an interlayer dielectric. Upper portions of the contact plugs are etched. A first barrier layer is formed on a surface of the interlayer dielectric including the contact plugs. A second barrier layer is formed on the first barrier layer over the interlayer dielectric. The second barrier layer has lower compatibility with a metallic material than the first barrier layer. A first metal layer is formed over the first and second barrier layers. The first metal layer, the first barrier layer and the second barrier layer are then patterned.
Hynix Semiconductor Inc.
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Seung Hee Eun Soo Jung Geun
Hong Kim Kim