William Park & Associates Ltd.
Semiconductor integrated circuit device including an electro-static discharge protection circuit
A semiconductor integrated circuit device may include a pad, a first voltage protection circuit and a second voltage protection circuit. The first voltage protection circuit may be connected with the pad. The second voltage protecting circuit may be connected between the first voltage protection circuit and a ground terminal. The first voltage protection circuit may include a gate positive p-channel metal oxide semiconductor (GPPMOS) transistor. The second voltage protection circuit may include serially connected GPPMOS transistors.
SK hynix Inc.
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Seung Yeop Ju Hyeong Hyun Duck Chang Hwi Jin Woo
Lee Lee Lee Lee Kim