Cantor Colburn LLP
Inner spacer formation and contact resistance reduction in nanosheet transistors
A nanosheet field effect transistor device includes a semiconductor substrate including a stack of semiconductor nanosheets and a gate structure. The gate structure has an electrically conductive gate contact on the nanosheets and defines a channel region interposed between opposing source or drain (S/D) regions. The nanosheet field effect transistor further includes an electrically conductive cladding layer that encapsulates an outer surface of the S/D regions, and inner spacers on the sidewalls of the gate structure. The inner spacers are interposed between the cladding layer and the gate contact.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Choonghyun Shogo Juntao Kangguo
Lee Mochizuki Li Cheng