Semiconductor device isolation structure and fabrication method of semiconductor device using the same
 A semiconductor device isolation structure includes a semiconductor substrate including an active region and a field region, an insulation layer buried in the active region of the substrate, and an isolation layer formed in the field region of the substrate deeper than the buried insulation layer. A method for isolating a semiconductor device includes the steps of preparing a semiconductor substrate, defining an active region and a field region in the substrate, forming an insulation layer buried in the active region of the substrate, and forming an isolation layer in the field region of the substrate to be deeper than the buried insulation layer. The invention applies to an SOI (Silicon On Insulator) provided with a SIMOX (Separation by Implanted Oxygen) type, for effectively overcoming interfacial defects between a buried oxide film and a semiconductor substrate, and improves a reliability of the semiconductor device by planarizing the same. 
Hyundai Electronics Industries Co., Ltd.
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Seung Ho
Lee