Maschoff Brennan
Programming method and reading method for memory device
Methods for programming or reading a memory cell are disclosed. The methods include following operations. A read voltage at a first read voltage level is applied to read a memory cell for detecting a resistance level of the memory cell. The read voltage at a second read voltage level, different from the first read voltage level, is applied to read the memory cell for determining a waveform type has been utilized to program the memory cell. The resistance level and the waveform type are combined to recognize data bits stored in the memory cell.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Yu-Sheng Jau-Yi
Chen Wu