Eschweiler & Associates, LLC
Electro-migration barrier for Cu interconnect
Integrated circuit devices and method of forming them. The devices include a dielectric barrier layer formed over a copper-containing metal interconnect structure. The dielectric barrier layer inhibits electro-migration of Cu. The dielectric barrier layer includes a metal-containing layer that forms an interface with the interconnect structure. Incorporating metal within the interfacial layer improves adhesion of the dielectric barrier layer to copper lines and the like and provides superior electro-migration resistance over the operating lifetime of the devices.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Su-Jen Chia-Ho Chih-Chiang
Sung Chen Chang