Jianq Chyun IP Office
Method of forming shadow layer on the wafer bevel
A method of forming a shadow layer on a wafer bevel region is provided. First, a substrate having the wafer bevel region and a central region is provided. Thereafter, an upper insulator and a lower insulator are provided. The upper insulator is disposed on an upper surface of the substrate and at least covers the central region. The lower insulator is disposed on a lower surface of the substrate and at least covers the central region. A shadow layer is then formed on the upper surface which is not covered by the upper insulator and on the lower surface which is not covered by the lower insulator. Next, the upper insulator and the lower insulator are removed.
Nanya Technology Corporation
H
H01L
inventional
Tse-Yao Wen-Chieh Jin-Tau Wei-Hui
Huang Wang Huang Hsu