Anova Law Group, PLLC
LDMOS transistor, ESD device, and fabrication method thereof
A method is provided for fabricating an LDMOS transistor. The method includes providing a base substrate. The method also includes forming a first well area doped with a first well ion in the base substrate. In addition, the method includes forming a second well area doped with a second well ion in the base substrate, where the second well area includes a first region adjacent to the first well area. Moreover, the method includes forming a first ion doping region doped with first ions in the first well area and the first region, where a type of the first ions is the same as a type of the first well ion and opposite to a type of the second well ion. Further, the method includes forming a gate structure on part of the first well area and part of the first region.
Semiconductor Manufacturing International (Shanghai) Corporation Semiconductor Manufacturing International (Beijing) Corporation
H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional
Yong Cheng Qing
Li Wei