Slater Matsil, LLP
Barrier structure for copper interconnect
A method for forming an interconnect structure includes forming a dielectric layer overlying a substrate, forming an opening in the dielectric layer, forming a metal-containing layer overlying the opening in the dielectric layer, forming a conformal protective layer overlying the metal-containing layer, filling a conductive layer in the opening, and performing a thermal process to form a metal oxide layer barrier layer underlying the metal-containing layer.
Taiwan Semiconductor Manufacturing Company
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Chih-Wei Ching-Fu Sheng-Hsuan You-Hua Yu-Hung Yu-Min
Chang Yeh Lin Chou Lin Chang