Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Semiconductor device
A semiconductor device is disclosed, which includes a semiconductor substrate, drain and source regions of a MOS transistor, a gate electrode formed on a surface of a channel region of the MOS transistor trench type element isolation regions in each of which an insulating film is formed on a surface of a trench formed in the surface of the semiconductor substrate, the element isolation regions sandwiching the channel region from opposite sides thereof in a channel width direction, and a conductive material layer for a back gate electrode, which is embedded in a trench of at least one of the element isolation regions, configured to be supplied with a predetermined voltage to make an depletion layer in a region of the semiconductor substrate under the channel region of the MOS transistor or to voltage-control the semiconductor substrate region.
Kabushiki Kaisha Toshiba
H H
H01L H01L
inventional inventional
Shinichi Yoichi Takashi Takeshi Kazumasa
Watanabe Takegawa Ohsawa Kajiyama Sunouchi