Fliesler, Dubb, Meyer & Lovejoy
Simplified process for fabricating flash eeprom cells
 A simplified fabrication procedure for making flash EEPROM memory cells is disclosed. The method comprises performing a double-diffuse (deep) junction implant after the shallow source/drain of the memory cell have been implanted and formed. A high energy double-diffuse implant is used to replace separate, individual implant and diffusion steps which results in a memory cell having, less damage to its substrate. 
Advanced Micro Devices, Inc.
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H01L H01L
inventional inventional
Paul J. Hsingya Arthur Jian
Steffan Wang Chen