Lackenbach Siegel Marzullo Aronson & Greenspan, PC
Method for making GaAs-InGaAs high electron mobility transistor
 A GaAs-InGaAs high electron mobility transistor includes: a GaAs substrate; a GaAs buffer layer overlaying on the GaAs substrate; a graded InGaAs channel overlaying on the GaAs layer; a GaAs spacer layer overlaying on the graded InGaAs channel layer; a .delta.-doping layer overlaying on the GaAs spacer layer; a GaAs cap layer overlaying on the .delta.-doping layer; drain and source terminals overlaying on the GaAs cap layer and contacting the graded InGaAs channel layer; and a gate terminal overlaying on the GaAs cover layer and located between the drain terminal and the source terminal. 
National Science Council
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inventional additional inventional
Chun Yen
Chang