Slater & Matsil, L.L.P.
MOS devices having elevated source/drain regions
A semiconductor structure includes a semiconductor substrate; a gate dielectric over the semiconductor substrate; a gate electrode over the gate dielectric; a deep source/drain region adjacent the gate electrode; a silicide region over the deep source/drain region; and an elevated metallized source/drain region between the silicide region and the gate electrode. The elevated metallized source/drain region adjoins the silicide region.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Ta-Ming Chih-Hsin Chung-Hu Hung-Wei Wen-Chin
Kuan Ko Ke Chen Lee