Flash memory and method of manufacturing the same
A flash memory structure includes a memory gate on a substrate, a select gate adjacent to the memory gate, and an oxide-nitride spacer between the memory gate and the select gate, where the oxide-nitride spacer further includes an oxide layer and a nitride layer having an upper nitride portion and a lower nitride portion, and the upper nitride portion is thinner than the lower nitride portion.
UNITED MICROELECTRONICS CORP.
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Yuan-Hsiang Weichang Yi-Shan Wei Zhen Shen-De
Chang Liu Chiu Ta Chen Wang