Maschoff Brennan
Memory device and manufacturing method thereof
A memory device includes a substrate, a transistor, and a memory cell. The substrate includes a cell region and a logic region. The transistor is over the logic region and includes a first metal gate stack. The memory cell is over the cell region and includes an erase gate. The erase gate is a metal gate stack.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chien-Hung Wei-Cheng
Chang Wu