Method of forming oxide semiconductor field effect transistor
An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.
UNITED MICROELECTRONICS CORP.
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Ding-Lung Hui-Ling Sheng-Yao Yen-Chen Qinggang Li Li Chien-Ming Jen-Po Yao-Hung
Chen Chen Huang Chen Xing Ding Lai Huang Liu