Method for fabricating transistor with thinned channel
A method of fabricating a MOS transistor having a thinned channel region is described. The channel region is etched following removal of a dummy gate. The source and drain regions have relatively low resistance with the process.
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Justin K. Mark L. Matthew V. Suman Marko Robert S. Brian S. Jack T. Amlan
Brask Doczy Metz Datta Radosavljevic Chau Doyle Kavalieros Majumdar