Marshall, Gerstein & Borun LLP
Program method of flash memory device
A method of erasing and programming a flash memory device including multi-level cells (MLCs). MLCs of a word line are selected and some of the MLCs are pre-programmed based on whether their individual threshold voltages are included in a first voltage range. The selected MLCs are pre-programmed with a pre-program (first) voltage; and the remaining MLCs are prohibited from pre-programming; then the remaining MLCs connected to the selected word line are programmed by applying a program (second) voltage that gradually rises from the pre-program voltage at a ratio of a step voltage n for the selected line.
Hynix Semiconductor Inc.
G G G G G G G G G
G11C G11C G11C G11C G11C G11C G11C G11C G11C
inventional inventional inventional additional inventional inventional additional inventional inventional
Kyung Pil Hyung Seok Sook Kyung Keum Hwan Ju In Min Kyu Seok Jin
Hwang Kim Kim Noh Kim Lee Joo