Optoelectronic device with a wide bandgap and method of making same
A light-emitting device epitaxially-grown on a GaAs substrate which contains an active region composed of AlxGa1-xAs alloy or of related superlattices of this materials system is disclosed. This active region either includes tensile-strained GaP-rich insertions aimed to increase the forbidden gap of the active region targeting the bright red, orange, yellow, or green spectral ranges, or is confined by regions with GaP-rich insertions aimed to increase the barrier height for electrons in the conduction band preventing the leakage of the nonequilibrium carriers outside of the light-generation region.
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Vitaly James Nikolay
Shchukin Lott Ledentsov