Loza & Loza, LLP
Gan rectifier suitable for operating under 35GHZ alternating-current frequency, and preparation method therefor
The present invention discloses a method for preparing a GaN rectifier suitable for operating at an alternating current frequency of 35 GHz: sequentially growing, on a silicon substrate, an N-polar GaN buffer layer, a carbon doped semi-insulated N-polar GaN layer, a non-doped N-polar AlGaN layer, a non-doped N-polar GaN layer and a non-doped N-polar InGaN thin film to obtain a rectifier epitaxial wafer; preparing a pattern groove for a schottky contact electrode on the GaN rectifier epitaxial wafer, and depositing the schottky contact electrode in the groove; preparing a pattern for an ohmic contact electrode, and depositing a device ohmic contact electrode on the surface of the epitaxial wafer; subsequently, depositing a silicon nitride passivation layer at a part where there is no electrode on the surface of the epitaxial wafer, and preparing a surface electrode area; and finally, performing mesa isolation treatment on the GaN rectifier epitaxial wafer. The present invention realizes the preparation of a high-frequency GaN rectifier, and improves the performance stability of a rectifier device operating at a high power.
SOUTH CHINA UNIVERSITY OF TECHNOLOGY
H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Xiaochan Wenliang Yuan Guoqiang
Li Wang Li Li