Eschweiler & Associates, LLC
Flat pad structure for integrating complementary metal-oxide-semiconductor (CMOS) image sensor processes
A pad structure for a complementary metal-oxide-semiconductor (CMOS) image sensor is provided. A semiconductor substrate is arranged over a back end of line (BEOL) metallization stack, and comprises a scribe line opening. A buffer layer lines the scribe line opening. A conductive pad comprises a base region and a protruding region. The base region is arranged over the buffer layer in the scribe line opening, and the protruding region protrudes from the base region into the BEOL metallization stack. A dielectric layer fills the scribe line opening over the conductive pad, and is substantially flush with an upper surface of the semiconductor substrate. Further, a method for manufacturing the pad structure, as well as the CMOS image sensor, are provided.
Taiwan Semiconductor Manufacturing Co., Ltd.
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inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Ching-Chun Ming-Tsong Wei Chuang Hsiao-Hui Feng-Chi Yen-Ting Shyh-Fann Dun-Nian
Wang Wang Wu Tseng Hung Chiang Ting Yaung