Magnetic memory cell and fabrication method thereof
A magnetic memory cell includes a substrate having a memory region, a transistor within the memory region, a first dielectric layer disposed on the substrate, a landing pad in the first dielectric layer, a second dielectric layer covering the first dielectric layer and the landing pad, a cylindrical memory stack in the second dielectric layer, and a source line in the first dielectric layer. The first dielectric layer covers the memory region and the transistor. The landing pad is situated in a first horizontal plane and is coupled to a drain region of the transistor. The cylindrical memory stack has a bottom electrode connected to the landing pad and a top electrode electrically connected to a bit line. The source line is situated in a second horizontal plane and is connected to a source region of the transistor. The second horizontal plane is lower than the first horizontal plane.
UNITED MICROELECTRONICS CORP.
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Rai-Min Ya-Huei Hung-Yueh Yu-Ping
Huang Tsai Chen Wang