McDermott Will & Emery LLP
Manufacturing of semiconductor fin structure and manufacturing method of semiconductor device
A semiconductor device includes a substrate, a fin structure protruding from the substrate, a gate insulating layer covering a channel region formed of the fin structure, a gate electrode layer covering the gate insulating layer, and isolation layers disposed on opposite sides of the fin structure. The fin structure includes a bottom portion, a neck portion, and a top portion sequentially disposed on the substrate. A width of the neck portion is less than a width of the bottom portion and a width of a portion of the top portion.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chia-Wei Yu-Ting Chiung Wen
Chang Weng Hsu