Pillsbury Winthrop LLP
Method for forming damascene metal gate
The present invention relates to a method of forming a damascene gate electrode of highly integrated MOS transistor capable of easily removing a dummy polysilicon layer. The disclosed comprises the steps of forming a dummy gate insulating layer and a polysilicon layer for a dummy gate on a wafer; forming an interlayer insulating layer on the wafer; polishing the interlayer insulating layer to expose a top surface of the dummy polysilicon layer; and wet etching the exposed dummy polysilicon layer using a spin etching process.
Hynix Semiconductor, Inc.
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Se Aug Hyung Bok Jun Hyeub
Jang Choi Sun