Circuit and method for generating a reference level for a magnetic random access memory element
A method of establishing a reference level includes providing first and second non-overlapping paths from a first node to a second node, providing first and second reference magnetic random access memory (MRAM) elements in the first path, providing third and fourth reference MRAM elements in the second path, measuring a first value indicative of a resistance between the first node and the second node, and setting the reference level based at least in part on the measured value. Also an associated reference circuit.
QUALCOMM Incorporated
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inventional additional inventional
Jung Pill Seung H. Xiaochun Wenqing Xia
Kim Kang Zhu Wu Li