Volpe and Koenig, P.C.
Method for bonding semiconductor devices on sustrate and bonding structure formed using the same
The present invention provides a bonding method in semiconductor manufacturing process and a bonding structure formed using the same, which can achieve wafer-level bonding under a condition of normal temperature and low pressure. The bonding method comprises generating bonding structures capable of being mutually mechanical interlocked, wherein the frictional heat generated by the bonding structures capable of being mutually mechanical interlocked is higher than the bonding energy therebetween, and utilizing the frictional heat generated by the bonding structures capable of being mutually mechanical interlocked to bond the bonding structures capable of being mutually mechanical interlocked.
TSINGHUA UNIVERSITY
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Yu Qian Yang Ziyu Shuidi Jian
Chen Wang Hu Liu Wang Cai