Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Semiconductor device
A semiconductor device having a low feedback capacitance and a low switching loss. The semiconductor device includes: a substrate; a drift layer formed on a surface of the semiconductor substrate; a plurality of first well regions formed on a surface of the drift layer; a source region which is an area formed on a surface of each of the first well regions and defining, as a channel region, the surface of each of the first well regions interposed between the area and the drift layer; a gate electrode formed over the channel region and the drift layer thereacross through a gate insulating film; and second well regions buried inside the drift layer below the gate electrode and formed to be individually connected to each of the first well regions adjacent to one another.
Mitsubishi Electric Corporation
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Shoyu Shuhei Hiroshi Naruhisa Kenichi
Watanabe Nakata Watanabe Miura Ohtsuka