Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
MOS-type solid state imaging device with high sensitivity
A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.
Kabushiki Kaisha Toshiba
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Hisanori Hirofumi Keiji Michio Yoshinori Tetsuya Ryohei Nagataka Eiji
Ihara Yamashita Mabuchi Sasaki Iida Yamaguchi Miyagawa Tanaka Oba