Thomas, Kayden, Horstemeyer & Risley
Memory with high reading performance and reading method thereof
A memory includes many memory regions each including a target memory cell, a source line, a bit line and a reading control circuit. The source line is coupled to a first terminal of the target memory cell. The bit line is coupled to a second terminal of the target memory cell. The reading control circuit is for selectively applying a working voltage to the source line.
Macronix International Co., Ltd.
G G
G11C G11C
inventional inventional
Kuen-Long Wen-Chiao Chun-Hsiung Chin-Hung
Chang Ho Hung Chang