Dougherty & Troxell
Fabrication process and structure of the metal-insulator-semiconductor-insulator-metal (MISIM) multiple-differential-resistance (MNDR) device
 The present invention is a fabrication process and structure of a negative-differential-resistance device characterized by triple negative-differential-resistance at room temperature and hexad negative-differential-resistance at a low temperature (-105.degree. C.). The component parts are, from bottom upward, a substrate made of GaAs material, a first layer made of GaAs material, a second layer made of InGaAs (In.sub.x Ga.sub.1-x As) material, a third layer made of AlGaAs material, and a metallic coating by vaporization on the third layer. Of the three layers, the second one is a varied layer composed of our successively varied laminates. The device, by utilizing the successive carriers accumulations of step-graded InGaAs subwells and the barrier lowering effect, provides MNDR properties and good potential for multiple-valued logic circuit applications. 
H
H01L
inventional
Lih-Wen Wen-Chau
Laih Liu