Method of making integrated spacer for magnetoresistive RAM
 In a magnetoresistive random access memory device, a spacer material is deposited at the edges of a memory bit to maintain magnetization at the edges in a direction along the edges. 
Honeywell Inc.
H
H01L
inventional
Tangshiun Allan T. William F. Lonny L. Huang-Joung
Yeh Hurst Witcraft Berg Chen