Young & Thompson
Highly sensitive photoconductive infrared detector
 A semiconductor crystal infrared detecting portion structure is provided in a photoconductive infrared detector and is provided at opposite ends with first and second electrodes so biased that the first and second electrodes have a positive potential and a ground potential respectively. The semiconductor crystal infrared detecting portion structure has an infrared receiving part so that the semiconductor crystal infrared detecting portion structure comprises a first half region defined between the infrared receiving part and the first electrode and a second half region defined between the infrared receiving part and the second electrode. At least the second half region reduces in section area toward the second electrode to increase a resistance of at least the second half region. 
NEC Corporation
H G
H01L G01J
inventional inventional
Masahiko
Sano