Brinks Hofer Gilson & Lione
Magnetoresistive element
 A spin-valve thin film element comprises a pinned magnetic layer formed of a CoFe alloy or a CoFeNi alloy having adjusted composition ratios. Thus the pinned magnetic layer can have a positive magnetostriction and its magnetization can be induced in the height direction as a function of the magnetoelastic effect. In addition, the pinned magnetic layer can comprise fcc structure at least as a part of its crystal structure so as to give a large exchange anisotropic magnetic field. Accordingly, its magnetization orientation can firmly be fixed in the height direction to give enhanced reproducing characteristics. 
Alps Electric Co., Ltd.
H Y Y B G H B
H01F Y10T Y10S B82Y G11B H01L B82Y
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Masamichi
Saito