Venable LLP
Solid state imaging device and manufacturing method thereof
According to one aspect of the invention, provided is a solid state imaging device having a pixel including a photoelectric conversion portion provided in a semiconductor substrate. The photoelectric conversion portion includes first and second charge accumulation region of a first conductivity type provided at a first depth of the semiconductor substrate and spaced apart from each other by a first gap, and first and second semiconductor region of a second conductivity type provided at a second depth located under the first depth of the semiconductor substrate and extend over the first charge accumulation region, the first gap, and the second charge accumulation region in a planar view. At the second depth, an impurity concentration of the second conductivity type in a region under the first gap is higher than an impurity concentration of the second conductivity type in a region under the first and second charge accumulation regions.
CANON KABUSHIKI KAISHA
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H01L H01L H01L Y02E H01L H01L H01L H01L
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Masahiro Yoichi Daichi Yoichiro Ginjiro Junji Hajime Hideyuki
Kobayashi Wada Seto Handa Toyoguchi Iwata Ikeda Ito