J.C. Patents
Memory device structure including tilted sidewall and method for fabricating the same
A memory device structure includes a substrate, a memory stacked structure, and a spacer. The memory stacked structure is formed on the substrate by stacking a first electrode layer, a memory material layer, and a second electrode layer. The memory material layer has a tilted sidewall, or the memory material layer and the first electrode layer have a tilted sidewall. The tilted sidewall is indented with respect to a sidewall of the second electrode layer. The spacer is disposed on the tilted sidewall.
UNITED MICROELECTRONICS CORP.
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Wen-Jen Chun-Hung Chuan-Fu
Wang Cheng Wang