Gate structure of semiconductor device
A gate structure of a semiconductor device includes a first low resistance conductive layer, a second low resistance conductive layer, and a first type conductive layer disposed between and directly contacting sidewalls of the first low resistance conductive layer and the second low resistance conductive layer.
United Microelectronics Corp.
H
H01L
inventional
Guang-Hwa Chien-Ming Cheng-Hsien Li-Wei Chien-Ting Chih-Hao Che-Hua Yi-Wen Tian-Fu
Ma Lai Chou Cheng Lin Yu Hsu Chen Chiang