Horizon IP Pte Ltd
Implant damage control by in-situ C doping during SiGe epitaxy for device applications
Some example embodiments of the invention comprise methods for and semiconductor structures comprised of: a MOS transistor comprised of source/drain regions, a gate dielectric, a gate electrode, channel region; a carbon doped SiGe region that applies a stress on the channel region whereby the carbon doped SiGe region retains stress/strain on the channel region after subsequent heat processing.
International Business Machines Corporation (IBM) Chartered Semiconductor Manufacturing, Ltd.
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Judson Robert Jin Ping
Holt Liu