Eschweiler & Associates, LLC
RRAM cell structure with laterally offset BEVA/TEVA
The present disclosure relates to a resistive random access memory (RRAM) cell architecture, with off-axis or laterally offset top electrode via (TEVA) and bottom electrode via (BEVA). Traditional RRAM cells having a TEVA and BEVA that are on-axis can cause high contact resistance variations. The off-axis TEVA and BEVA in the current disclosure pushes the TEVA away from the insulating layer over the RRAM cell, which can improve the contact resistance variations. The present disclosure also relates to a memory device having a rectangular shaped RRAM cell having a larger area that can lower the forming voltage and improve data retention.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Wen-Ting Hsia-Wei Kuo-Chi Chin-Chieh Chih-Yang Sheng-Hung Yu-Wen Wen-Chun
Chu Chen Tu Yang Chang Shih Liao You