Lee & Morse, P.C.
Method of manufacturing a non-volatile memory device
A method of manufacturing a non-volatile memory device includes forming a tunnel isolation layer forming a tunnel isolation layer on a substrate, forming a conductive pattern on the tunnel isolation layer, forming a lower silicon oxide layer on the conductive pattern, treating a surface portion of the lower silicon oxide layer with a nitridation treatment to form a first silicon oxynitride layer on the lower silicon oxide layer, forming a metal oxide layer on the first silicon oxynitride layer, forming an upper silicon oxide layer on the metal oxide layer, and forming a conductive layer on the upper silicon oxide layer.
Samsung Electronics Co., Ltd.
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Young-Sun Sun-Jung Seung-Hwan Se-Hoon Young-Geun Han-Mei
Kim Kim Lee Oh Park Choi