Essential Patents Group, LLP
Group III-nitride antenna diode
A Group III-Nitride (III-N) device structure is presented comprising: a heterostructure having three or more layers comprising III-N material, a cathode comprising donor dopants, wherein the cathode is on a first layer of the heterostructure,an anode within a recess that extends through two or more of the layers of the heterostructure, wherein the anode comprises a first region wherein the anode is separated from the heterostructure by a high k dielectric material, and a second region wherein the anode is in direct contact with the heterostructure, and a conducting region in the first layer in direct contact to the cathode and conductively connected to the anode. Other embodiments are also disclosed and claimed.
Intel Corporation
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Richard Uwe Marko Harald Stephan Sansaptak Han Wui Peter Domagoj
Geiger Hodel Radosavljevic Gossner Leuschner Dasgupta Then Baumgartner Siprak