Ware, Fressola, Van Der Sluys & Adolphson LLP
Transistor, method for producing an integrated circuit and a method of producing a metal silicide layer
The invention relates to a method for the selective silicidation of contact areas that allow the production of highly integrated circuits, preferably in a SMOS or BiCMOS process. To this end, a metal oxide layer (14) that contains for example praseodymium oxide is deposited onto a prepared wafer (12). A silicon layer (16) and on top of said silicon layer a cover layer (18) is deposited onto the metal oxide layer (14), said cover layer being laterally structured. In a subsequent tempering step in an oxygen-free, reducing gas atmosphere the silicon layer (16) and the metal oxide layer (14) are converted to a metal silicide layer in lateral sections (20, 22) in which the cover layer (18) was previously removed.
IHP GmbH Innovations for High Performance Microelectronics/ Institut fur Innovative Mikroelektronik
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Dietmar Rainer Jing Ping Hans-Jörg Andriy
Krüger, deceased Kurps Liu Osten Goryachko