Marshall, Gerstein & Borun LLP
Recess gate type transistor
A semiconductor device having recess gates and a method for fabricating the same. The semiconductor device includes a semiconductor substrate having inverse triangular recesses formed therein; a gate insulating film having a designated thickness formed on the semiconductor substrate; gate electrodes formed on the gate insulating film so that the gate electrodes fill the inverse triangular recesses and protrude from the surface of the semiconductor substrate; and first and second junction regions formed in the semiconductor substrate and opposed to each other so that the corresponding one of the gate electrodes is interposed therebetween.
Hynix Semiconductor Inc.
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Yong Soo Seung Woo Min Yong Kyoung Bong
Jung Jin Lee Rouh