Myers Bigel Sibley & Sajovec, P.A.
Methods of fabricating integrated circuit devices using anti-reflective coating as implant blocking layer
A patterned anti-reflective coating may be used as a selective implant-blocking layer during fabrication of an integrated circuit transistor. In particular, the anti-reflective coating may be used as a gate sidewall spacer to block at least some dopants from an integrated circuit substrate beneath the gate sidewall spacer. Moreover, a single mask may be used when fabricating source and drain extension regions and source and drain regions of an integrated circuit transistor.
Infineon Technologies AG Samsung Electronics Co., Ltd.
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Seok-Gyu Lothar Chong Kwang Sang Jine
Lee Doni Chang Park