Hauptman Ham, LLP
Selective Fin-shaping process
A method of forming a fin field-effect transistor (FinFET) includes forming a plurality of fins on a substrate. The method further includes forming an oxide layer on the substrate, wherein a bottom portion of each fin of the plurality of fins is embedded in the oxide layer, and the bottom portion of each fin of the plurality of fins has substantially a same shape. The method further includes shaping at least one fin of the plurality of fins, wherein a top portion of the at least one fin has a different shape from a top portion of another fin of the plurality of fins.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Clement Hsingjen Chi-Wen Yi-Tang Chi-Yuan Ling-Yen Chih-Sheng
Wann Liu Lin Shih Yeh Chang