Maschoff Brennan
Semiconductor component and method for fabricating the same
A semiconductor component, which includes a substrate, an interfacial layer disposed on the substrate, a first metal gate structure and a second metal gate structure disposed on the substrate. The first metal gate structure includes a first high-k dielectric layer disposed on the interfacial layer, and a first metal gate layer disposed on the first high-k dielectric layer. The second metal gate structure includes a second high-k dielectric layer disposed on the interfacial layer, a third high-k dielectric layer disposed on the second high-k dielectric layer, and a second metal gate layer disposed on the third high-k dielectric layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Cheng-Chieh Yu-Hsun Shih-Kai Yung-Hsien Kuang-Hsin
Lai Chen Fan Wu Chen