Harness, Dickey & Pierce, P.L.C.
Organometallic precursor, thin film having the same, metal wiring including the thin film, method of forming a thin film and method of manufacturing a metal wiring using the same
Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved.
Samsung Electronics Co., Ltd.
C C C Y C
C23C C07F C23C Y10T C07F
inventional inventional inventional additional inventional
Jung-Ho Kyoo-Chul Jung-Sik Youn-Joung Jun-Hyun Seung-Min
Lee Cho Choi Cho Cho Ryu