Park, Vaughan, Fleming & Dowler LLP
Integrated electro-absorption modulator
An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.
ORACLE INTERNATIONAL CORPORATION
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Hiren D. Jin Xuezhe Guoliang John E. Shiyun Ashok V. Stevan S. Ivan
Thacker Yao Zheng Li Cunningham Lin Krishnamoorthy Djordjevic Shubin