Lowe Hauptman Ham & Berner, LLP
Method of fabricating a plurality of gate structures
The invention relates to integrated circuit fabrication, and more particularly to a semiconductor device with a plurality of gate structures. An exemplary method of fabricating the plurality of gate structures comprises providing a silicon substrate; depositing a dummy oxide layer over the substrate; depositing a dummy gate electrode layer over the dummy oxide layer; patterning the layers to define a plurality of dummy gates; forming nitrogen-containing sidewall spacers on the plurality of dummy gates; forming an interlayer dielectric layer between the nitrogen-containing sidewall spacers; selectively depositing a hard mask layer on the interlayer dielectric layer by an atomic layer deposition (ALD) process; removing the dummy gate electrode layer; removing the dummy oxide layer; depositing a gate dielectric; and depositing a gate electrode.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Wei-Yeh Xiong-Fei Wei-Yang Kuang-Yuan Jian-Hao
Tang Yu Lee Hsu Chen