Slater Matsil, LLP
Fin field-effect transistor device and method of forming the same
A method of forming a semiconductor device includes forming source/drain regions on opposing sides of a gate structure, where the gate structure is over a fin and surrounded by a first dielectric layer; forming openings in the first dielectric layer to expose the source/drain regions; selectively forming silicide regions in the openings on the source/drain regions using a plasma-enhanced chemical vapor deposition (PECVD) process; and filling the openings with an electrically conductive material.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Yi-Hsiang Hung-Yi Chien Min-Hsiu Chih-Wei
Chao Huang Chang Hung Chang