Myers Bigel Sibley & Sajovec, PA
Methods and batch type atomic layer deposition apparatus for forming dielectric films and methods of manufacturing metal-insulator-metal capacitors including the dielectric films
Provided are methods of manufacturing dielectric films including forming a first dielectric film on a wafer using atomic layer deposition (ALD) in a first batch type apparatus, forming a second dielectric film on the first dielectric film using atomic layer deposition in a second batch type apparatus, wherein the second dielectric film has a higher crystallization temperature than the first dielectric film and forming a third dielectric film on the second dielectric film using atomic layer deposition in a third batch type apparatus. Methods of manufacturing metal-insulator-metal (MIM) capacitors using the methods of forming the dielectric films and batch type atomic layer deposition apparatus for forming the dielectric films are also provided.
Samsung Electronics Co., Ltd.
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Jae-Hyoung Jong-cheol Jung-hee Se-hoon
Choi Lee Chung Oh