Birch, Stewart, Kolasch & Birch, LLP
Thin film transistor with sub-gates and schottky source/drain and a manufacturing method of the same
The present invention discloses a thin film transistor with sub-gates and Schottky source/drain and a method of manufacturing the same. Doping of source/drain, and the following annealing steps used conventionally are omitted and the complexity of process and process costs are reduced. The temperature of the process is also decreased. A thin film transistor with sub-gates and Schottky source/drain of the invention is able to operate in both the n type and p type channel modes on the same transistor element depending on the biased voltage of the sub-gate. Moreover, an electric junction is formed by induction, using bias voltage applied on the sub-gate, which takes the place of the conventional source/drain extensions. Consequently, the off-state leakage current is reduced.
S. M. Sze
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inventional inventional inventional inventional
Ming-Shih Tiao-Yuan Horng-Chih
Tsai Huang Lin