Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Solid-state imaging device
A solid-state imaging device includes a semiconductor substrate including a surface region of a second conductivity type, and plural unit pixels arranged in a matrix form on the surface region of the second conductivity type. Each of the unit pixels includes a first semiconductor region of a first conductivity type separated by a preset distance from the surface of the surface region in the depth direction and accumulates signal charges obtained by photo-electrical conversion of input light, and a gate electrode formed above the surface region, adjacent to the first semiconductor region and controlling readout of the signal charge accumulated in the first semiconductor region, end portions of the gate electrode and the first semiconductor region separated by a preset distance in a horizontal direction. Thus, the signal charge can be easily read-out and occurrence of thermal noise at the dark time, dark current noise, image-lag can be suppressed.
Kabushiki Kaisha Toshiba
H H
H01L H01L
inventional inventional
Hirofumi
Yamashita