Myers Bigel & Sibley, P.A.
Semiconductor devices with non-implanted barrier regions and methods of fabricating same
An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a Schottky junction with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact.
Cree, Inc.
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Qingchun Scott Thomas
Zhang Allen