VanTek IP LLP
Fin-type FET with low source or drain contact resistance
Embodiments of the invention are directed to methods of forming a FinFET. A non-limiting example method includes forming a fin across from a major surface of a substrate. A dummy gate is formed around a channel region of the fin. A source region or a drain region is formed on the fin, and the dummy gate is replaced with a metal gate structure. Subsequent to replacing the dummy gate with the metal gate structure, dopants are inserted into the source region or the drain region.
ELPIS TECHNOLOGIES INC
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Kangguo Peng Juntao Heng
Cheng Xu Li Wu