Morgan, Lewis & Bockius LLP
Method for forming capacitor of semiconductor device
A method for forming a capacitor of a semiconductor device prevents loss of a storage node from occurring during an isolation process between cells of the storage node, thereby obtaining a sufficient height of the storage node. The method includes the steps of forming a first insulating film on a substrate, the first insulating film having a contact hole; forming a conductive layer within the contact hole; forming a seed metal layer on the first insulating film and the conductive layer; forming a second insulating film on the seed metal layer; selectively etching the second insulating film to form a lower electrode formation region; forming a lower electrode formation material layer in the lower electrode formation region using the seed metal layer, the lower electrode formation material layer having a height lower than a surface of the second insulating film; forming a passivation film on the lower electrode formation material layer; and removing the second insulating film and portions of seed metal layer using the passivation film as a mask.
Hynix Semiconductor Inc.
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Hyung Bok
Choi