Schwabe, Williamson & Wyatt, P.C.
Systems, methods, and apparatuses for implementing bi-layer semiconducting oxides in source and drain for low access and contact resistance of thin film transistors
In accordance with disclosed embodiments, there are provided systems, methods, and apparatuses for implementing bi-layer semiconducting oxides in a source/drain for low access and contact resistance of thin film transistors. For instance, there is disclosed in accordance with one embodiment a semiconductor device having therein a substrate; a bi-layer oxides layer formed from a first oxide material and a second oxide material, the first oxide material comprising a semiconducting oxide material and having different material properties from the second oxide material comprising a high mobility oxide material; a channel layer formed atop the substrate, the channel layer formed from the semiconducting oxide material of the bi-layer oxides layer; a high mobility oxide layer formed atop the channel layer, the high conductivity oxide layer formed from the high mobility oxide material of the bi-layer oxides layer; metallic contacts formed atop the high mobility oxide layer; a gate and a gate oxide material formed atop the high mobility oxide layer, the gate oxide material being in direct contact with the high mobility oxide layer; and spacers separating the metallic contacts from the gate and gate oxide material. Other related embodiments are disclosed.
Intel Corporation
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Rafael Van H. Jack T. Shriram Gilbert Marko
Rios Le Kavalieros Shivaraman Dewey Radosavljevic