Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
Schottky barrier diode and method for manufacturing schottky barrier diode
A Schottky barrier diode and a method of manufacturing the Schottky barrier diode are provided. The diode includes an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and having an upper surface, a lower surface, and an inclined surface that connects the upper surface and the lower surface. A p region is disposed on the inclined surface of the n− type epitaxial layer and a Schottky electrode is disposed on the upper surface of the n− type epitaxial layer and the p region. In addition, an ohmic electrode is disposed on a second surface of the n+ type silicon carbide substrate.
Hyundai Motor Company
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inventional additional additional inventional inventional additional
Dae Hwan Jong Seok Kyoung-Kook Youngkyun
Chun Lee Hong Jung