The Marbury Law Group., PLLC
Backside connection structures for nanostructures and methods of forming the same
A semiconductor nanostructure and an epitaxial semiconductor material portion are formed on a front surface of a substrate, and a planarization dielectric layer is formed thereabove. A first recess cavity is formed over a gate electrode, and a second recess cavity is formed over the epitaxial semiconductor material portion. The second recess cavity is vertically recessed to form a connector via cavity. A metallic cap structure is formed on the gate electrode in the first recess cavity, and a connector via structure is formed in the connector via cavity. Front-side metal interconnect structures are formed on the connector via structure and the metallic cap structure, and a backside via structure is formed through the substrate on the connector via structure.
Taiwan Semiconductor Manufacturing Company Limited
H H H H H H H H H H H H H H H H H H B H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L B82Y H01L
inventional inventional inventional inventional inventional inventional additional additional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional additional additional
Chia-Hao Chih-Hao Lin-Yu Cheng-Chi Li-Zhen
Chang Wang Huang Chuang Yu