IP & T Group LLP
Apparatus and method for detecting leakage current of semiconductor memory device, and internal voltage generating circuit using the same
A semiconductor memory device is capable of generating a back bias voltage based on a target level changed according to a leakage current of the semiconductor memory devices, thereby minimizing the amount of the leakage current. The semiconductor memory device includes a leakage current detector and a back bias voltage generator. The leakage current detector is configured to detect a leakage current of a cell array. The back bias voltage generator is configured to generate a back bias voltage having a target level changed according to the leakage current.
Hynix Semiconductor Inc.
G G
G11C G11C
inventional inventional
Yoon-Jae Jun-Gi
Shin Choi