Patterson & Sheridan, L.L.P.
Semiconductor variable capacitor using threshold implant region
Certain aspects of the present disclosure generally relate to a semiconductor variable capacitor, and techniques for fabricating the same, implemented using a threshold voltage implant region. For example, the semiconductor variable capacitor generally includes a first non-insulative region disposed above a first semiconductor region, a second non-insulative region disposed above the first semiconductor region, and a threshold voltage (Vt) implant region interposed between the first non-insulative region and the first semiconductor region and disposed adjacent to the second non-insulative region. In certain aspects, the semiconductor variable capacitor also includes a control region disposed above the first semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region.
QUALCOMM Incorporated
H H H H H
H01L H01L H01L H01L H01L
inventional inventional inventional inventional additional
Qingqing Francesco Fabio Alessio Seung Hyuk Xia
Liang Carobolante Marino Kang Li