Scully, Scott, Murphy & Presser, P.C.
Method of forming a cross-section hourglass shaped channel region for charge carrier mobility modification
A method for fabricating the semiconductor structure include a semiconductor substrate having a cross-section hourglass shaped channel region. A stress imparting layer is located adjacent the channel region. The hourglass shape may provide for enhanced vertical tensile stress within the channel region when it is longitudinally compressive stressed by the stress imparting layer.
International Business Machines Corporation
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Huajie Siddhartha Dureseti Judson R. Qiqing C.
Chen Panda Chidambarrao Holt Ouyang