McClure, Qualey & Rodack, LLP
Fin field effect transistor (FinFET) device structure with dual spacers and method for forming the same
A FinFET device structure is provided. The FinFET device structure includes a first gate structure formed over a fin structure and a first spacer layer formed on the first gate structure. The FinFET device structure includes a first insulation layer formed over the fin structure, and the first insulating layer is adjacent to and separated from the first spacer layer. The FinFET device structure includes a conductive plug formed over the first gate structure, and the conductive plug is formed over the first spacer layer and the first insulation layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chia-Hao Yu-Ming Chih-Hao Jia-Chuan Wai-Yi
Chang Lin Wang You Lien