Fletcher Yoder, P.C.
Method of forming a DRAM array of devices with vertically integrated recessed access device and digitline
A method is disclosed for forming a memory device having buried access lines (e.g., wordlines) and buried data/sense lines (e.g., digitlines) disposed below vertical cell contacts. The buried wordlines may be formed trenches in a substrate extending in a first direction, and the buried digitlines may be formed from trenches in a substrate extending in a second direction perpendicular to the first direction. The buried digitlines may be coupled to a silicon sidewall by a digitline contact disposed between the digitlines and the silicon substrate.
Micron Technology, Inc.
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Ceredig Kunal Jim Thy David
Roberts Parekh Jozwiak Tran Hwang