Heslin Rothenberg Farley & Mesiti P.C.
Advanced method for scaled SRAM with flexible active pitch
Devices and methods of fabricating scaled SRAM with flexible active pitch are provided. One method includes, for instance: obtaining an intermediate semiconductor device having a first portion and a second portion, including a plurality of layers and a patterned mandrel; forming a first set of spacers surrounding the patterned mandrel; etching the dielectric layer; depositing a photoresist layer; opening the photoresist layer over the first portion and not the second portion, removing the patterned mandrel in the open areas; etching the dielectric layer in the open areas; removing the photoresist layer, the remaining patterned mandrels, and the first set of spacers in the first and second portion, etching the silicon layer and MTO layer to form a pattern; forming a second set of spacers around the pattern; and etching a set of fins into the substrate and oxide layer.
GLOBALFOUNDRIES Inc.
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Jinping Hui
Liu Zang