Green, Howard & Mughal LLP
Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices
III-N semiconductor heterostructures including a raised III-N semiconductor structures with inclined sidewall facets are described. In embodiments, lateral epitaxial overgrowth favoring semi-polar inclined sidewall facets is employed to bend crystal defects from vertical propagation to horizontal propagation. In embodiments, arbitrarily large merged III-N semiconductor structures having low defect density surfaces may be overgrown from trenches exposing a (100) surface of a silicon substrate. III-N devices, such as III-N transistors, may be further formed on the raised III-N semiconductor structures while silicon-based transistors may be formed in other regions of the silicon substrate.
Intel Corporation
H H H H H H H H H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional additional inventional inventional inventional inventional additional inventional additional inventional inventional additional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional
Robert S. Sansaptak Benjamin Sanaz K. Han Wui Marko Ravi Seung Hoon
Chau Dasgupta Chu-Kung Gardner Then Radosavljevic Pillarisetty Sung