Techniques for temperature controlled ion implantation
Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.
Varian Semiconductor Equipment Associates, Inc.
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additional inventional
Jinning Richard S. Reuel Steven R. Sandeep Jonathan Ukyo Scott Julian Kyu-Ha
Liu Muka Liebert Walther Mehta England Jeong Holden Blake Shim