Toler Law Group, PC
System and method of manufacturing a fin field-effect transistor having multiple fin heights
An apparatus comprises a first fin field effect transistor (FinFET) device extending from a surface of a first etch stop layer. The apparatus also comprises a second FinFET device extending from a surface of a second etch stop layer. A first compound layer is interposed between the first etch stop layer and the second etch stop layer.
Qualcomm Incorporated
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Xia Choh Fei PR Bin
Li Yeap Chidambaram Yang