Slater Matsil, LLP
Implant isolated devices and method for forming the same
A device includes a semiconductor substrate and implant isolation region extending from a top surface of the semiconductor substrate into the semiconductor substrate surrounding an active region. A gate dielectric is disposed over an active region of the semiconductor substrate, wherein the gate dielectric extends over the implant isolation region. A gate electrode is disposed over the gate dielectric and an end cap dielectric layer is between the gate dielectric and the gate electrode over the implant isolation region.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Wen-De Jen-Cheng Wen-I Tzu-Hsuan Min-Feng Dun-Nian
Wang Liu Hsu Hsu Kao Yaung