Murphy, Bilak & Homiller, PLLC
Semiconductor device having integrated MOS-gated or Schottky diodes
A semiconductor device includes a semiconductor substrate and a plurality of transistor cells. Each transistor cell includes: a gate trench structure formed in the semiconductor substrate and circumscribing the transistor cell; a needle-shaped field electrode trench structure formed in the semiconductor substrate and spaced inward from the gate trench structure; a source region of a first conductivity type formed in the semiconductor substrate adjacent the gate trench structure; a body region of a second conductivity type opposite the first conductivity type formed in the semiconductor substrate below the source region; and a drift zone of the first conductivity type formed in the semiconductor substrate below the body region. The semiconductor device further includes a plurality of MOS-gated diodes or Schottky diodes, each diode formed in the semiconductor substrate at an intersection of four adjacent transistor cells. Corresponding methods of manufacture are also described.
Infineon Technologies Austria AG
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Yan Jian
Gao Liu