Gate dielectric structure for reducing boron penetration and current leakage
The present invention provides a semiconductor device capable of substantially retarding boron penetration within the semiconductor device and a method of manufacture therefor. In the present invention the semiconductor device includes a gate dielectric located over a substrate of a semiconductor wafer, wherein the gate dielectric includes a nitrided layer and a dielectric layer. The present invention further includes a nitrided transition region located between the dielectric layer and the nitrided layer and a gate located over the gate dielectric.
Agere Systems Inc.
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H01L H01L
inventional additional
Yi Yuan Feng Kurt G.
Ma Chen Li Steiner