Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
Semiconductor device and manufacturing method thereof
A semiconductor device is provided. The device includes an n− type layer with a trench disposed in a first surface of an n+ type silicon carbide substrate. An n+ type region and a first p type region are disposed at the n− type layer and at a lateral surface of the trench. A plurality of second p type regions are disposed at the n− type layer and spaced apart from the first p type region. A gate electrode includes a first and a plurality of second gate electrodes disposed at the trench and extending from the first gate electrode, respectively. A source electrode is disposed on and insulated from the gate electrode. A drain electrode is disposed on a second surface of the n+ type silicon carbide substrate. The source electrode contacts the plurality of second p type regions spaced apart with the n− type layer disposed therein.
Hyundai Motor Company
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Dae Hwan Nackyong Jong Seok Youngkyun Junghee
Chun Joo Lee Jung Park