Chemical mechanical polishing of polysilicon plug using a silicon nitride stop layer
A method for controllably simultaneously polishing polysilicon and oxide using an oxide slurry and a polish stop layer over the oxide is described. Semiconductor device structures are provided in and on a semiconductor substrate. An oxide layer is deposited overlying the semiconductor device structures. A silicon nitride layer is deposited overlying the oxide layer as a polish stop layer. A contact opening is etched through the silicon nitride layer and the oxide layer to one of the semiconductor device structures. A polysilicon layer is deposited overlying the silicon nitride layer and within the contact opening. The polysilicon layer is polished until the silicon nitride layer is contacted and then the polysilicon layer, silicon nitride layer, and oxide layer are overpolished in a timed polish to remove the silicon nitride layer and planarize the oxide layer to complete simultaneous planarization of the oxide and polysilicon layers in the fabrication of an integrated circuit device.
Taiwan Semiconductor Manufacturing Company
H H H H H
H01L H01L H01L H01L H01L
inventional additional inventional inventional additional
Syun-Ming Chung-Long
Jang Chang