Manufacturing method of thin film transistor substrate
The present invention provides a manufacture method of a thin film transistor substrate. In the same photolithographic process, the via deposing process is implemented to the gate isolation layer and the etching stopper layer is patterned. That is, the photolithographic process is not implemented but the oxide semiconducting pattern is formed directly after the gate isolation layer is formed. After the etching stopper layer is formed, the gate isolation layer and the etching stopper layer are patterned in the same photolithographic process. Comparing with the manufacture method of prior art, one photolithographic process can be eliminated. Meanwhile, the aperture ratio is raised by forming an open at the transparent conducting layer.
Shenzhen China Star Optoelectronics Technology Co., Ltd
H H H H H H H H G G
H01L H01L H01L H01L H01L H01L H01L H01L G02F G09F
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Chihyuan Wenhui
Tseng Li