Structure and method for manufacturing a series read only memory with spacer film
 Disclosed is a device and method for manufacturing a mask read only memory (ROM) using a spacing film and NAND logic to attain high integration density. Side wall layers are separated between connection regions and reference regions with gate oxide layers formed on a surface of the substrate and gate electrode formed over side walls of the side wall layers placed between each of the gate oxide layers and adjacent memory cells. Channel regions having a first conductivity type of ion are formed under memory cells adjacent to the connection region and oxide layers of selected memory cells. Channel regions exhibiting a second conductivity type of ion are formed under the oxide layers of the non-selected memory cells and the side wall layers. 
SamSung Electronics Co., Ltd.
H Y H
H01L Y10S H01L
inventional additional inventional
Jung-Hyuk
Choi