Eschweiler & Potashnik, LLC
Extra doped region for back-side deep trench isolation
The present disclosure, in some embodiments, relates to a method of forming an image sensor. The method includes implanting a dopant into a substrate to form a doped region and implanting one or more additional dopants into the substrate to form an image sensing element between the doped region and a front-side of the substrate. The doped region directly contacts a boundary of the image sensing element that is furthest from the front-side of the substrate. The method further includes etching the substrate to form one or more trenches extending into a back-side of the substrate. The back-side of the substrate opposes the front-side of the substrate. The method further includes filling the one or more trenches with one or more dielectric materials to form isolation structures.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Shyh-Fann Yen-Ting Hsiao-Hui Tzu-Jui Dun-Nian Ching-Chun Yu-Jen Yuichiro Jhy-Jyi Chun-Yuan
Ting Chiang Tseng Wang Yaung Wang Wang Yamashita Sze Chen