Schwabe, Williamson & Wyatt, P.C.
Work function based approaches to transistor threshold voltage tuning
A semiconductor device is disclosed. The semiconductor device includes a substrate, an epitaxial layer on the substrate, a semiconductor interlayer on top of the epitaxial layer, a gate conductor above the semiconductor interlayer, a gate insulator on the bottom and sides of the gate conductor and contacting the top surface of the semiconductor interlayer, a source region extending into the epitaxial layer, and a drain region extending into the epitaxial layer. The semiconductor device also includes a first polarization layer on the semiconductor interlayer between the source region and the gate conductor and a second polarization layer on the semiconductor interlayer between the drain region and the gate conductor.
Intel Corporation
H H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional inventional additional inventional inventional inventional inventional inventional additional additional inventional additional additional inventional inventional inventional additional additional inventional
Marko Sansaptak Paul Han Wui Walid
Radosavljevic Dasgupta Fischer Then Hafez