Contact structure for group III-V semiconductor devices and method of producing the same
A contact structure for group III-V and group II-VI compound semiconductor devices, generally used as a light emitting diode (LED), a laser diode (LD), or a photodiode (PD), comprising p-type and/or n-type conduction is disclosed. The contact structure comprises a stack of multiple layers of metals and transparent conducting oxide. The first layer of the contact structure is in direct contact to the semiconductor and comprises at least one of indium, tin, nickel, chromium and zinc, or an alloy or combination of layers thereof. The second layer of the structure is in direct contact to the first layer and comprises at least one of Indium Tin Oxide, Indium oxide, and Tin oxide, or a combination thereof. The optional third layer of the structure contacts the second layer and comprises at least one of Au, Al, Pt, Pd, Mo, Cr, Rh, Ti. The third layer may be a contact pad contacting a smaller portion of the second layer. A preferred thermal anneal of one or more layers of the contact structure further improves semiconductor device performance.
Emitronix Inc.
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Wingo Youming
Huang Li