Haynes and Boone, LLP
Structure and method for gate-all-around device with extended channel
The present disclosure provides a method of semiconductor fabrication that includes forming a semiconductor fin protruding from a substrate, the semiconductor fin including a plurality of first semiconductor layers of a first semiconductor material and second semiconductor layers of a second semiconductor material alternatively stacked, the second semiconductor material being different from the first semiconductor material in composition; forming a first gate stack on the semiconductor fin; forming a recess in the semiconductor fin within a source/drain (S/D) region adjacent to the first gate stack, a sidewall of the first and second semiconductor material layers being exposed within the recess; performing an etching process to the semiconductor fin, resulting in an undercut below the first gate stack; epitaxially growing on the sidewall of the semiconductor fin to fill in the undercut with a semiconductor extended feature of the first semiconductor material; and growing an epitaxial S/D feature from the recess.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chih-Chao Chih-Hao Pei-Hsun Chun-Hsiung Ching-Wei
Chou Wang Wang Lin Tsai