Lee IP Law, P.C.
Semiconductor device and method for fabricating the same
A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.
SAMSUNG ELECTRONICS CO., LTD.
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Won Keun Heon Bok Dae Yong Jeong Hyuk Wan Don Sang Jin Hyo Seok
Chung Lee Kim Yim Kim Hyun Choi