Fish & Richardson P.C.
Memory circuit, signal processing circuit, and electronic device
A signal processing circuit using a nonvolatile memory circuit with a novel structure is provided. The nonvolatile memory circuit is formed using a transistor including an oxide semiconductor and a capacitor connected to one of a source electrode and a drain electrode of the transistor. A high-level potential is written to the memory circuit in advance, and this state is kept in the case where data to be saved has a high-level potential, whereas a low-level potential is written to the memory circuit in the case where data to be saved has a low-level potential. Thus, a signal processing circuit with improved writing speed can be provided.
Semiconductor Energy Laboratory Co., Ltd.
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G11C H01L H01L G11C G11C
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Masashi
Fujita