Blakely, Sokoloff, Taylor & Zafman LLP
Compositionally-graded quantum-well channels for semiconductor devices
A compositionally-graded quantum well channel for a semiconductor device is described. A semiconductor device includes a semiconductor hetero-structure disposed above a substrate and having a compositionally-graded quantum-well channel region. A gate electrode is disposed in the semiconductor hetero-structure, above the compositionally-graded quantum-well channel region. A pair of source and drain regions is disposed on either side of the gate electrode.
Intel Corporation
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Titash Gilbert Marko Mantu K. Willy Ravi
Rakshit Dewey Radosavljevic Hudait Rachmady Pillarisetty