Molecular beam epitaxy growth of ternary and quaternary metal chalcogenide films
The ternary alloy CdSexTe1-x(2 1 1) and the quaternary alloy Cd1-zZnzSexTe1-x have been grown on Si(2 1 1) substrates using molecular beam epitaxy (MBE). The growth of CdSeTe is facilitated using a compound CdTe effusion source and a Se effusion source while the growth of CdZnSeTe is facilitated using a compound CdTe effusion source, a compound ZnTe effusion source, and an elemental Se source. The alloy compositions (x) and (z) of CdSexTe1-x ternary compound and Cd1-zZnzSexTe1-x are controlled through the Se/CdTe and ZnTe/CdTe flux ratios. The rate of Se incorporation is higher than the rate of Te incorporation as growth temperature increases. As-grown CdSeTe with 4% Se and CdZnSeTe with 4% Zn+Se, which is substantially lattice matched to long-wavelength infrared HgCdTe materials, exhibits excellent surface morphology, low surface defect density (less than 500 cm2), and a narrow X-ray rocking curve (a full-width at half maximum of 103 arcsec).
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Gregory Nibir K. Yuanping
Brill Dhar Chen