Volentine & Whitt, PLLC
Pixel, image sensor including the same, and portable electronic device including the image sensor
A pixel for a backside illuminated (BSI) image sensor includes a semiconductor substrate having a first surface and a second surface, a photoelectric conversion region between the first surface and the second surface to generate charges in response to light received through the second surface, first trench-type isolation region surrounding the photoelectric conversion region and extending vertically from the second surface, a floating diffusion region in the semiconductor substrate below the photoelectric conversion region, and a transfer gate extending vertically from the first surface towards the photoelectric conversion region to transfer the charges from the photoelectric conversion region to the floating diffusion region. The first trench-type isolation region is formed of a negative charge material.
Samsung Electronics Co., Ltd.
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Jung Chak Seung Joo Hae Yong Young Woo Kyung Ho
Ahn Nah Park Jung Lee