Townsend and Townsend and Crew LLP
Flash memory device having intergated plug
A non-volatile memory device includes first and second cell gates formed in a cell region; first and second peripheral gates are formed in a peri-region; and an inter-gate plug is provided between the first and second cell gates. The inter-gate plug includes a first insulating layer, a second conductive layer formed over the first insulating layer, and a third insulating layer formed over the second conductive layer.
Hynix Semiconductor Inc.
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Yun Bong
Lee