Onello & Mello, LLP
Non-volatile memory with improved sensing window
A semiconductor device may include: a substrate. First and second gate electrode patterns are disposed on first and second fin type active patterns. The first and second fin type active patterns include a first channel region disposed between a first impurity region and a second impurity region. The second gate electrode pattern crosses a first gate-separating region included in the second fin type active region. The first gate-separating region includes a trench and an embedded insulator filling at least a portion of the trench.
Samsung Electronics Co., Ltd.
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Shin Cheol Hyun Min Ji Hoon
Min Choi Yoon