Slater & Matsil, L.L.P.
Interconnect structure and method for forming the same
Embodiments of an interconnect structure and methods for forming an interconnect structure are provided. The method includes forming a low-k dielectric layer over a substrate, forming an opening in the low-k dielectric layer, forming a conductor in the opening, forming a capping layer over the conductor, and forming an etch stop layer over the capping layer and the low-k dielectric layer. The etch stop layer includes an N element with a content ratio not less than about 25 at %.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional additional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional
Kuang-Yuan Chia Cheng Joung-Wei Chih-Hung Po-Cheng
Hsu Chou Liou Sun Shih