Birch, Stewart, Kolasch & Birch, LLP
Method for forming poly-silicon film
In the present invention, a method is used for forming a poly-silicon film that uses sequential lateral solidification (SLS) with two laser irradiations using a mask for patterning the laser beam so as to increase the grain length. The method also achieves enhancing the throughput due to the use of a mask that is designed for the method.
Industrial Technology Research Institute
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H01L H01L H01L H01L
inventional inventional inventional inventional
Yu-Cheng Fang-Tsun Hung-Tse
Chen Chu Chen