Patterson + Sheridan LLP
PECVD process
A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
Applied Materials, Inc.
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Xinhai Terrance Y. Patrick Edward Mohamad A. Nagarajan Zhijun Jeongmin Michael Wenyoung Jian J. Juan Carlos Masaki Heung Lak Ganesh Dmitriy Amit Kumar Todd Bok Hoen Ramprakash Thomas Jianhua Sergey Shahid
Han Lee Reilly Budiarto Ayoub Rajagopalan Jiang Lee Tsiang Chen Rocha-Alvarez Ogata Park Balasubramanian Panasyuk Bansal Egan Kim Sankarakrishnan Nowak Zhou Starik Shaikh