McGinn IP Law Group, PLLC
Semiconductor device having an undercoat layer and method of manufacturing the same
In a semiconductor device in which a group III nitride compound semiconductor layer is formed without a low temperature grown buffer layer provided on an undercoat layer formed by a metal nitride layer, the metal nitride layer is formed of reddish brown titanium nitride. The reddish brown titanium nitride can be obtained by causing nitrogen to be rich in the titanium nitride.
Toyoda Gosei Co., Ltd.
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Miki Teppei Masanori Kazuhiro Jun Susumu Naoki
Moriyama Watanabe Murakami Ito Ito Tsukimoto Shibata