IP & T Group LLP
Memory device having twin cell mode and refresh method thereof
A memory device includes: a memory region including a plurality of word lines; and a refresh control block configured to: sequentially refresh the plurality of word lines in a manner such that two or more word lines are simultaneously refreshed during a first refresh operation, simultaneously refresh two or more first critical word lines corresponding to a first critical address generated by up-counting a target address during a second refresh operation, and simultaneously refresh two or more second critical word lines corresponding to a second critical address generated by down-counting the target address.
SK hynix Inc.
G G G
G11C G11C G11C
additional inventional inventional
Hong-Ki Jung-Hyun
Moon Kim