Brinks Hofer Gilson & Lione
EEPROM device having a retrograde program junction region and process for fabricating the device
An EEPROM device and process for fabricating the device having a retrograde program junction region includes providing a semiconductor substrate having a principal surface and forming a program junction region in the semiconductor substrate. The program junction region is characterized by a doping concentration profile in which a maximum doping concentration is displaced away from the principal surface. The doping concentration profile can be obtained by forming a first portion of a tunnel dielectric layer on the principal surface, then introducing doping atoms into the program junction region, followed by forming a second portion of a tunnel dielectric layer. In another embodiment, the doping concentration profile in the program junction region is formed by two consecutive doping processes, in which either the same doping species is introduced at different energies, or a second doping process is carried out with a dopant having a different conductivity type than the first dopant.
Lattice Semiconductor Corporation
H G G H
H01L G11C G11C H01L
inventional additional additional inventional
Guoxin Sunil D.
Li Mehta