Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Method of manufacturing a photodiode in a solid-state device
 The solid-state image sensor comprises a semiconductor substrate, a plurality of photoelectric conversion sections formed within respective isolated active regions on the semiconductor substrate, an image area wherein unit cells comprising the plurality of photoelectric conversion sections and a signal scanning circuit are arranged in a two-dimensional array form, and signal lines for reading signals from the respective unit cells within the image pick-up area, wherein the respective photoelectric conversion sections being formed by at least twice ion implantation. 
Kabushiki Kaisha Toshiba
H H
H01L H01L
inventional inventional
Hisanori Hirofumi Ikuko Hidetoshi Tetsuya
Ihara Yamashita Inoue Nozaki Yamaguchi