Seyfarth Shaw LLP
Heterojunction bipolar transistor power amplifier with backside thermal heatsink
A heterojunction bipolar transistor may include an emitter, a base contacting the emitter, a collector contacting the base, a sub-collector contacting the collector, and an electrical isolation layer contacting the sub-collector. The heterojunction bipolar transistor may also include a backside heatsink thermally coupled to the sub-collector and the collector. The backside heatsink may be aligned with a central axis of the emitter and the base.
QUALCOMM Incorporated
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Gengming Xia Bin
Tao Li Yang