Ryan, Mason & Lewis, LLP
Method and structure of forming fin field-effect transistor without strain relaxation
A method for manufacturing a semiconductor device includes patterning a strained semiconductor layer on a substrate into at least one strained fin, forming a plurality of dummy gates spaced apart from each other on the at least one strained fin, forming a spacer layer on the plurality of dummy gates, and on part of the at least one strained fin between the plurality of dummy gates, growing a plurality of source/drain regions on exposed portions of the at least one strained fin, removing the spacer layer from the part of the at least one strained fin between the plurality of dummy gates, and converting the part of the at least one strained fin between the plurality of dummy gates into at least one oxide.
International Business Machines Corporation
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Peng Choonghyun Juntao Heng Kangguo
Xu Lee Li Wu Cheng