Haynes and Boone, LLP
Method of implantation
Provided is a method of implanting dopant ions to an integrated circuit. The method includes forming a first pixel and a second pixel in a substrate, forming an etch stop layer over the substrate, forming a hard mask layer over the etch stop layer, patterning the hard mask layer to include an opening between the first pixel and the second pixel, and implanting a plurality of dopants through the opening to form an isolation feature.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Wen-De Chun-Chieh Dun-Nian Jeng-Shyan Jyh-Ming Jen-Cheng Pao-Tung
Wang Chuang Yaung Lin Hung Liu Chen