Selectively removing titanium nitride hard mask and etch residue removal
Formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue comprise an amine salt buffer, a non-ambient oxidizer, and the remaining being liquid carrier includes water and non-water liquid carrier selected from the group consisting of dimethyl sulfone, lactic acid, glycol, and a polar aprotic solvent including but not limited to sulfolanes, sulfoxides, nitriles, formamides and pyrrolidones. The formulations have a pH <4, preferably <3, more preferably <2.5. The aqueous formulations having water as liquid carrier and semi-aqueous formulation having water and non-polar aprotic solvent(s) further contain acidic fluoride. The formulations offer high titanium nitride etch rates while provide excellent compatibility towards W, AlN, AlO, and low k dielectric materials. The formulations may comprise weakly coordinating anions, corrosion inhibitors, and surfactants. Systems and processes use the formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue.
VERSUM MATERIALS US, LLC
H C C H C H C C
H01L C23F C09K H01L C09K H01L C23F C09K
additional inventional inventional inventional inventional inventional inventional inventional
Tianniu Wen Dar Seiji William Jack
Chen Liu Inaoka Casteel, Jr.