Robinson Intellectual Property Law Office, P.C.
Thin film transistor with channel region in recess
A semiconductor element with high current drive capability, capable of high-speed operation, and having little variation in pluralities of semiconductor elements is provided. It is characterized by the fact that semiconductor elements have a first crystalline semiconductor region including pluralities of crystal orientations, and the first crystalline semiconductor region being connected to a second crystalline semiconductor region which is conductive, wherein the first crystalline semiconductor region is extended in the direction parallel to the insulating film which extends in linear-shaped stripe pattern on the insulating surface, and the second crystalline semiconductor region is provided ranging over the insulating film which extends in linear-shaped stripe pattern.
Semiconductor Energy Laboratory Co., Ltd.
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inventional inventional additional inventional inventional additional inventional inventional inventional inventional inventional inventional additional inventional inventional additional inventional additional inventional inventional additional inventional inventional
Hideomi Atsuo Kiyoshi Shunpei Hidekazu
Suzawa Isobe Kato Yamazaki Miyairi