Harness, Dickey & Pierce, P.L.C.
Gallium nitride based semiconductor device and method of manufacturing the same
A gallium nitride based semiconductor device includes a silicon-based layer doped simultaneously with boron (B) and germanium (Ge) at a relatively high concentration, a buffer layer on the silicon-based layer, and a nitride stack on the buffer layer. A doping concentration of boron (B) and germanium (Ge) may be higher than 1×1019/cm3.
Samsung Electronics Co., Ltd.
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Jun-youn Young-jo Jae-kyun Jae-won Hyo-ji
Kim Tak Kim Lee Choi