Finnegan, Henderson, Farabow, Garrett, & Dunner, L.L.P.
Metallization method of semiconductor device
A method for forming a metallization contact in a semiconductor device includes the steps of: (a) forming an insulating layer on a semiconductor substrate including an active device region; (b) forming a contact hole to expose a portion of the active device region by etching a portion of the insulating layer; (c) forming a CVD TiN layer on the insulating layer and inside the contact hole; (d) forming a PVD TiN layer on the CVD TiN layer using ionized metal plasma sputtering; and (e) forming a metal layer on the PVD TiN layer.
Dongbu Electronics Co., Ltd.
H H
H01L H01L
inventional inventional
Jung Joo
Kim