Brinks Hofer Gilson & Lione
Tunneling magnetic sensing element including enhancing layer having high Fe concentration in the vicinity of barrier layer
A tunneling magnetic sensing element is provided, in which an increase in the magnetostriction of a free magnetic layer is reduced and the rate of change in resistance is high. A laminate T1 constituting the tunneling magnetic sensing element includes a portion in which a pinned magnetic layer, a barrier layer, and a free magnetic layer are disposed in that order from the bottom. An enhancing layer disposed on the barrier layer side of the free magnetic layer includes a first enhancing layer on the barrier layer side and a second enhancing layer on the soft magnetic layer side, and the Fe content of a CoFe alloy constituting the first enhancing layer is specified to be larger than the Fe content of the CoFe alloy of the second enhancing layer.
TDK Corporation
H B G H G B B H G H G
H01L B82Y G11B H01F G11B B82Y B82Y H01F G01R H01L G01R
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Yosuke Ryo Masahiko Naoya Masamichi Takuya Kazumasa
Ide Nakabayashi Ishizone Hasegawn Saito Seino Nishimura