Resistance-based memory having two-diode access device
A resistance-based memory includes a two-diode access device. In a particular embodiment, a method includes biasing a bit line with a first voltage. The method further includes biasing the sense line with a second voltage. Biasing the bit line and biasing the sense line generates a current through a resistance-based memory element and through one of a first diode and a second diode. A cathode of the first diode is coupled to the bit line and an anode of the second diode is coupled to the sense line.
QUALCOMM Incorporated
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Taehyun Jungwon Kangho Jung Pill Wuyang Seung Hyuk
Kim Suh Lee Kim Hao Kang