Systems and methods for programming a memory cell having a programmable resistance
A circuit for programming a memory cell having a programmable resistance includes a switch. The circuit is configured to apply a programming voltage to the memory cell when the switch is in a first state. The circuit is configured to apply a programming current to the memory cell when the switch is in a second state. The resistance of the memory cell changes from a first resistance state to a second resistance state based on the application of the programming voltage or the programming current to the memory cell.
Taiwan Semiconductor Manufacturing Company Limited
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Chia-Fu Chung-Cheng Po-Hao
Lee Chou Lee