Novick, Kim & Lee, PLLC
Composition for performing cleaning after chemical/ mechanical polishing
Disclosed is a post-chemical-mechanical-polishing cleaning composition, which is capable of effectively removing impurities from the surface of a wafer substrate after chemical mechanical polishing and also of preventing the corrosion of metal line materials, and which includes choline hydroxide, tetrabutylammonium hydroxide, 1,2,4-triazole, 2-hydroxypyridine, and the remainder of ultrapure water.
YOUNG CHANG CHEMICAL CO., LTD
C C C C C C
C11D C11D C11D C11D C11D C11D
inventional inventional inventional inventional inventional inventional
Seung Hun Seung Hyun Seong Hwan
Lee Lee Kim