Duane Morris LLP
Multi-zone temperature control for semiconductor wafer
An apparatus includes a process chamber configured to perform an ion implantation process. A cooling platen or electrostatic chuck is provided within the process chamber. The cooling platen or electrostatic chuck is configured to support a semiconductor wafer. The cooling platen or electrostatic chuck has a plurality of temperature zones. Each temperature zone includes at least one fluid conduit within or adjacent to the cooling platen or electrostatic chuck. At least two coolant sources are provided, each fluidly coupled to a respective one of the fluid conduits and configured to supply a respectively different coolant to a respective one of the plurality of temperature zones during the ion implantation process. The coolant sources include respectively different chilling or refrigeration units.
Taiwan Semiconductor Manufacturing Co., Ltd
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Hsin-Hsien Jo-Fei Ming-Yu Jun-Lin Zin-Chang Jong-I Chi-Ming Chyi-Shyuan Jih-Jse Chun-Lin
Wu Wang Fan Yeh Wei Mou Yang Chern Lin Chang