Marshall, Gerstein & Borun LLP
Flash memory device and method of programming the same
A flash memory device may include a memory cell array, a page buffer unit, and a switching element. The page buffer unit may include first and second latches and is configured to program data into the memory cell array and read data from the memory cell array. The switching element enables the first latch during a verify operation of a first program based on a first verify voltage, and enables or disables the first latch in order to execute a verify operation of a second program based on a second verify voltage lower than the first verify voltage depending on whether data to be programmed has been stored in the second latch.
Hynix Semiconductor Inc.
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inventional inventional additional inventional
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Lee Kim