Myers Bigel & Sibley, P.A.
Methods of forming low-defect strain-relaxed layers on lattice-mismatched substrates and related semiconductor structures and devices
Methods of forming strain-relaxing semiconductor layers are provided in which a porous region is formed in a surface of a semiconductor substrate. A first semiconductor layer that is lattice-matched with the semiconductor substrate is formed on the porous region. A second semiconductor layer is formed on the first semiconductor layer, the second semiconductor layer being a strained layer as formed. The second semiconductor layer is then relaxed.
Samsung Electronics Co., Ltd.
H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional
Mark Stephen Wei-E
Rodder Wang