Semiconductor device and method of forming the same
A semiconductor device may include, but is not limited to, a semiconductor substrate having a first gate groove; a first fin structure underneath the first gate groove; a first diffusion region in the semiconductor substrate, the first diffusion region covering an upper portion of a first side of the first gate groove; and a second diffusion region in the semiconductor substrate. The second diffusion region covers a second side of the first gate groove. The second diffusion region has a bottom which is deeper than a top of the first fin structure.
Longitude Semiconductor S.a.r.l.
H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
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Hiroaki Kiyonori Koji Koji
Taketani Oyu Taniguchi Hamada