Haynes and Boone, LLP
Lithography method with reduced impacts of mask defects
An extreme ultraviolet lithography method is disclosed. In an example, the EUVL method includes forming a resist layer on a substrate; performing a first exposure process to image a first pattern of a first sub-region of a first mask to the resist layer; performing a second exposure process to image a second pattern of a second sub-region of the first mask to the resist layer; and performing a third exposure process to image a third pattern of a first sub-region of a second mask to the resist layer. The second and third patterns are identical to the first pattern. The first, second and third exposure processes collectively form a latent image of the first pattern on the resist layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Ching-Fang Anthony Shinn-Sheng Sheng-Chi Wen-Chuan Ting-Hao
Yu Yen Yu Chin Wang Hsu