Haynes and Boone, LLP
Fin field effect transistor
A fin field effect transistor including a first insulation region and a second insulation region over a top surface of a substrate. The first insulation region includes tapered top surfaces, and the second insulation region includes tapered top surfaces. The fin field effect transistor further includes a fin extending above the top surface between the first insulation region and the second insulation region. The fin includes a first portion having a top surface below the tapered top surfaces of the first insulation region. The fin includes a second portion having a top surface above the tapered top surfaces of the first insulation region.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional additional inventional inventional inventional inventional inventional inventional
Shin-Yeh Chu-Yun Hung-Ta Shu-Tine Hung-Ming
Huang Fu Lin Yang Chen