Duane Morris LLP
Method of forming contact plug on silicide structure
A method of manufacturing a semiconductor device is provided. A semiconductor element is formed on a substrate. The semiconductor element has at least one nickel silicide contact region, an etch stop layer formed over said element, and an insulating layer formed over said etch stop layer. A portion of the etch stop layer immediately over a selected contact region is removed using a process that does not substantially react with the contact region, to form a contact opening. The contact opening is then filled with a conductive material to form a contact.
Taiwan Semiconductor Manufacturing Co, Ltd.
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Ming-Huan Chih-Wei Shau-Lin Chu-Yun Chin-Hwa Mei-Yun Chii-Ming Ju-Wang Yuan-Hung
Tsai Chang Shue Fu Hsieh Wang Wu Hsu Chiu