Nikaido, Marmelstein, Murray & Oram
Storage device
 A storage device includes an MR element; write circuit responsive to input of binary storage data indicative of either a first state or a second state, and applying a write magnetic field in a first direction correspondingly to the first state, or applying the write magnetic field in a reverse second direction correspondingly to the second state; and read circuit for applying a bias magnetic field to the MR element and discriminating between the first and second states in accordance with the volume resistivity of the MR element. 
Fujitsu Limited
G
G11C
inventional
Tohru Hideyuki
Kouhei Kikuchi