Haynes and Boone, LLP
Dielectric fins with different dielectric constants and sizes in different regions of a semiconductor device
A semiconductor device includes. A first epi-layer and a second epi-layer are each located in a first region of the semiconductor device. A first dielectric fin is located between the first epi-layer and the second epi-layer. The first dielectric fin has a first dielectric constant. A third epi-layer and a fourth epi-layer are each located in a second region of the semiconductor device. A second dielectric fin is located between the third epi-layer and the fourth epi-layer. The second dielectric fin has a second dielectric constant that is less than the first dielectric constant.
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Jhon Jhy Hua Feng Min-Yann
Liaw Chen Hsieh