Lee & Morse, P.C.
Magnetic memory devices
A magnetic memory device includes a substrate, a circuit device on the substrate, a lower electrode electrically connected to the circuit device, a magnetic tunnel junction structure (MTJ structure) on the lower electrode, and an upper electrode on the MTJ structure. The MTJ structure includes a pinned layer structure including at least one crystalline ferromagnetic layer and at least one amorphous ferromagnetic layer, a free layer, and a tunnel barrier layer between the pinned layer structure and the free layer.
Samsung Electronics Co., Ltd.
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Joon-Myoung Yong-Sung Ju-Hyun Ki-Woong Se-Chung
Lee Park Kim Kim Oh