Marshall, Gerstein & Borun LLP
Device for electrostatic discharge protection and method of manufacturing the same
The present invention relates to a device for electrostatic discharge protection (ESD). According to an embodiment of the present invention, a device for electrostatic discharge protection includes a semiconductor substrate, a plurality of field oxide films formed in predetermined regions on the semiconductor substrate, a gate formed in a predetermined region on the semiconductor substrate between the field oxide films, a well pick-up region formed in a predetermined region on the semiconductor substrate between the field oxide films, a source formed in a predetermined region on the semiconductor substrate between the field oxide film and the gate, a drain drift region formed in a predetermined region on the semiconductor substrate between the gate and the field oxide film, a drain active region of a concentration higher than that of the drain drift region, the drain active region being formed in the drain drift region, and an oxide film formed on the semiconductor substrate on a boundary of the drain drift region and the drain active region. Accordingly, the current concentrated on the surface of the device can be uniformly distributed over the entire device.
Magnachip Semiconductor, Ltd.
H H H H
H01L H01L H01L H01L
additional inventional inventional inventional
Kil Ho Yong Icc
Kim Jung