Volentine & Whitt, PLLC
Anti-fuse circuit using MTJ breakdown and semiconductor device including same
An anti-fuse circuit includes an array of anti-fuses. Each anti-fuse has a tunneling magneto-resistance (TMR) element series connected with a transistor, such that breakdown of a magnetic tunnel junction (MTJ) in response to an applied first voltage stores fuse information. A sensing circuit senses and amplifies respective output signals provided by the anti-fuses.
Samsung Electronics Co., Ltd.
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inventional inventional inventional
Hong-Sun Hyun-Ho Chul-Woo Jong-Pil
Hwang Choi Park Son