WPAT, P.C., Intellectual Property Attorneys
Integrated circuit and image sensing device having metal shielding layer and related fabricating method
An integrated circuit includes a first semiconductor device, a second semiconductor device, and a metal shielding layer. The first semiconductor device includes a first substrate and a first multi-layer structure, and the first substrate supports the first multi-layer structure. The second semiconductor device includes a second substrate and a second multi-layer structure, and the second substrate supports the second multi-layer structure. The metal shielding layer is disposed between the first multi-layer structure and the second multi-layer structure, wherein the metal shielding layer is electrically connected to the second semiconductor device.
Taiwan Semiconductor Manufacturing Company Ltd.
H H H
H01L H01L H01L
inventional inventional inventional
Yung-Lung Yun-Wei Chun-Hao Tsung-Han Kuo-Cheng Hsin-Chi
Hsu Cheng Chou Tsai Lee Chen