Hayes Soloway PC
Sputter profile simulation method
The present invention provides a sputter profile simulation method which reduces a calculation time. The method comprises the steps of calculating sputter trajectories of particles emitted from a sputter target; projecting the sputter trajectories onto one or more first planes; extracting an outline of a contact hole on a second plane parallel to one of the first planes; defining two shadow points preventing the particles from going to a film-growth calculation coordinates point; and judging that, out of the sputter particle trajectories projected on the first plane, the sputter trajectories between two lines as film-growth contributing trajectories, the two lines joining the film-growth calculation coordinates point to each of the two shadow points.
NEC Corporation
G G
G06F G06F
additional inventional
Hiroaki
Yamada