Slater Matsil, LLP
Contact structure and method of fabricating the same
A method includes forming a first transistor and a second transistor over a substrate, wherein the first transistor and the second transistor share a drain/source region formed between a first gate of the first transistor and a second gate of the second transistor, forming a first opening in an interlayer dielectric layer and between the first gate and the second gate, depositing an etch stop layer in the first opening and on a top surface of the interlayer dielectric layer, depositing a dielectric layer over the etch stop layer, applying a first etching process to the dielectric layer until the etch stop layer is exposed, performing a second etching process on the etch stop layer until an exposed portion of the etch stop layer and portions of the dielectric layer have been removed.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Wan Hsuan Yu Shih Cheng-Wei Yi-Wei Hsin-Yan I-Hsiu Yean-Zhaw
Hsu Wang Chang Chiu Lu Wang Chen