Patterson & Sheridan, LLP
Nonvolatile semiconductor memory device comprising memory gate and peripheral gate having different thicknesses
A nonvolatile semiconductor memory device includes a semiconductor substrate, a memory element including a first gate electrode having a first thickness disposed on a first insulation film on the semiconductor substrate, and a first peripheral element other than a memory element including a second gate electrode having a second thickness disposed on a second insulation film on the semiconductor substrate. The first gate electrode and second gate electrode comprise a plurality of film layers, and the configuration of the film layers are different as between the first gate electrode of the memory element and the second gate electrode of the peripheral element, and the first thickness is different from the second thickness.
KABUSHIKI KAISHA TOSHIBA
H H
H01L H01L
inventional inventional
Shotaro Kazunari Shoichi Satoshi Karin
Murata Toyonaga Watanabe Nagashima Takayama