Lumen Patent Firm
Metal oxide-resistive memory using two-dimensional edge electrodes
Improved resistive random access memory (RRAM) devices are provided that use a 2-D electrode as the SET electrode to take up a variable amount of oxygen from an oxide material, thereby providing a non-volatile resistive memory cell.
The Board of Trustees of the Leland Stanford Junior University
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Joon Seunghyun Hon-Sum Philip
Sohn Lee Wong