Tung & Associates
FIN-FET device structure formed employing bulk semiconductor substrate
A fin-FET device and a method for fabrication thereof both employ a bulk semiconductor substrate. A fin and an adjoining trough are formed within the bulk semiconductor substrate. The trough is partially backfilled with a deposited dielectric layer to form an exposed fin region and an unexposed fin region. A gate dielectric layer is formed upon the exposed fin region and a gate electrode is formed upon the gate dielectric layer. By employing a bulk semiconductor substrate the fin-FET device is fabricated cost effectively.
Taiwan Semiconductor Manufacturing Co, Ltd
H H
H01L H01L
inventional inventional
Chuan-Ping Jhi-Cherng Hung-Wei Peng-Fu Hsun-Chih Di-Hong Kuang-Hsin
Hou Lu Chen Hsu Tsao Lee Chen