Sterne, Kessler, Goldstein & Fox P.L.L.C.
Formation and in-situ etching processes for metal layers
The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chi-Jen Tsung-Ta Yueh-Ching Chun-Chieh Yi-Ting Chi-Yu Po-Yu Huai-Tei Hsien-Ming
Yang Tang Pai Wang Wang Chou Lin Yang Lee