Cantor Colburn LLP
Vertical transport FET devices with uniform bottom spacer
Methods of fabrication and semiconductor structures includes vertical transport field effect transistors (VTFETs) having a uniform bottom spacer layer between different pattern density regions. The bottom spacer layer can be deposited by plasma vapor deposition.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Zhenxing Xin Juntao Kangguo
Bi Miao Li Cheng