MKG, LLC
RF LDMOS device and fabrication method thereof
A radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) device is disclosed, wherein a lightly doped n-type drain region has a laterally non-uniform n-type dopant concentration distribution, which is achieved by forming a moderately n-type doped region, having a higher doping concentration and a greater depth than the rest portion of the lightly doped n-type drain region, in a portion of the lightly n-type doped region proximate to the polysilicon gate. The structure enables the RF LDMOS device of the present invention to have both a high breakdown voltage and a significantly reduced on-resistance. A method of fabricating such a RF LDMOS device is also disclosed.
SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional additional additional inventional inventional additional inventional inventional inventional
Juanjuan Pengliang Wensheng Feng
Li Ci Qian Han