Myers Bigel, P.A.
Magnetoresistive random access memory devices and methods of manufacturing the same
An MRAM device includes a lower electrode on a substrate, an MTJ structure on the lower electrode, a metal oxide pattern on the MTJ structure, a conductive pattern on at least a portion of a sidewall of the metal oxide pattern, and an upper electrode on the metal oxide pattern and the conductive pattern. The conductive pattern has a thickness varying along the sidewall of the metal oxide pattern in a plan view.
Samsung Electronics Co., Ltd.
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Ji-Su Seung-Min Sung-Min
Ryu Lee Ahn