Koppel, Patrick, Heybl & Dawson
Silicon carbide-based device contact and contact fabrication method
A silicon carbide-based device contact and contact fabrication method employ a layer of poly-silicon on a SiC substrate, with the contact's metal layer deposited on top of the poly-silicon. Both Schottky and ohmic contacts can be formed. The poly-silicon layer can be continuous or patterned, and can be undoped or doped to be n-type or p-type. The present contact and method provide excellent contact adhesion, and can be employed with a number of different device types, to provide electrical contacts for Schottky diodes, pn diodes, and transistors, for example.
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Qingchun
Zhang