Ingrassia Fisher & Lorenz, P.C.
Integrated circuits having FinFETs with improved doped channel regions and methods for fabricating same
Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes forming a channel region of a fin structure with a first side, a second side, an exposed first end surface and an exposed second end surface. A gate is formed overlying the first side and second side of the channel region. The method includes implanting ions into the channel region through the exposed first end surface and the exposed second end surface. Further, the method includes forming source/drain regions of the fin structure adjacent the exposed first end surface and the exposed second end surface of the channel region.
GLOBALFOUNDRIES, INC.
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Vidmantas Bongki Bharat Weihua Jinping Seung
Sargunas Lee Krishnan Tong Liu Kim