Arent Fox LLP
Semiconductor device
An ESD protection device including a Si substrate with an ESD protection circuit formed at the surface of the substrate; pads formed on the Si substrate; a rewiring layer opposed to the surface of the Si substrate, which includes terminal electrodes electrically connected to the pads. The rewiring layer includes a SiN protection film formed on the surface of the Si substrate to cover parts of the pads except regions in contact with openings (contact holes) formed in a resin layer, and the resin layer that is lower in dielectric constant than the SiN protection film, and formed between the SiN protection film and the terminal electrodes. Thus, provided is a semiconductor device which can reduce the generation of parasitic capacitance, and eliminates variation in parasitic capacitance generated.
MURATA MANUFACTURING CO., LTD.
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Toshiyuki Noboru
Nakaiso Kato