Slater Matsil, LLP
Bi-layer metal deposition in silicide formation
A method includes performing a first sputtering to form a first metal film on a surface of a semiconductor region. The first sputtering is performed using a first ion energy. The method further includes performing a second sputtering to form a second metal film over and contacting the first metal film, wherein the first and the second metal films includes a same metal. The second sputtering is performed using a second ion energy lower than the first ion energy. An annealing is performed to react the first and the second metal films with the semiconductor region to form a metal silicide.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional
Sheng-Hsuan Chih-Wei
Lin Chang