Merchant, Gould, Smith, Edell, Welter & Schmidt
Hot-wall CVD method for forming a ferroelectric film
 The present invention is to provide a method for forming ferroelectric films using a hot-wall chemical vapor deposition apparatus, comprising the steps of: heating the processing tube and a plurality of receptacles which contain ferroelectric source materials; loading wafers into said processing tube; conveying vaporized gases from said receptacles to a mixing chamber using carrier gas when said processing is set to a predetermined temperature and mixing said vaporized gases in said mixing chamber, by keeping said processing tube vacuum; providing said mixing chamber with oxidization gas and reaction speed control gas to control reaction speed in said processing tube; and injecting mixed gases in said mixing chamber into said processing tube through a gas injecting means and depositing said mixed gases in said mixing chamber on the wafers. 
Hyundai Electronics Industries Co., Ltd.
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Jong Choul Seaung Suk Ho Gi Soo Han
Kim Lee Kim Choi