White & Case LLP
Semiconductor device
A semiconductor device includes a semiconductor body, first and second electrodes, and a control electrode. The semiconductor body includes first to fourth semiconductor layers. The first electrode is provided on a front surface of the semiconductor body. The second electrode is provided on a back surface of the semiconductor body. The control electrode is provided between the semiconductor body and the first electrode. The second semiconductor layer is positioned between a portion and other portion of the first semiconductor layer in a first direction directed along the front surface. The third semiconductor layer contacts the portion of first semiconductor layer and the second semiconductor layer. The third semiconductor layer includes a first end portion positioned in the portion of the first semiconductor layer and a second end portion positioned in the second semiconductor layer. The fourth semiconductor layer is selectively provided in the second end portion.
Kabushiki Kaisha Toshiba Toshiba Electronic Devices & Storage Corporation
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Hiroshi Syotaro Hisao Hiroaki Hideto
Ohta Ono Ichijo Yamashita Sugawara