Myers Bigel Sibley & Sajovec, P.A.
Methods of fabricating semiconductor devices using mask shrinking
Provided are methods of fabricating a semiconductor device. The method may include forming a mold layer on a substrate, forming a mask layer on the mold layer, etching the mold layer using the mask layer as an etch mask to form a channel hole penetrating the mold layer, shrinking the mask layer to provide a reduced mask layer, forming a spacer layer to cover the reduced mask layer, and forming a vertical channel to fill the channel hole and be electrically connected to the substrate. As a result, the channel hole can have an enlarged entrance.
Samsung Electronics Co., Ltd.
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Yoochul Jinkwan Seongsoo
Kong Lee Lee