Haynes and Boone, LLP
Method of forming semiconductor device including silicide layers
A method includes forming a gate structure on a semiconductor material region, wherein the gate structure includes spacer elements abutting a gate electrode layer. The gate electrode layer is etched to provide a recess. A hard mask layer is formed over the gate electrode layer in the recess. Silicide layers are then formed on a source region and a drain region disposed in the semiconductor material region, while the hard mask is disposed over the gate electrode layer. A source contact and a drain contact is then provided, each source and drain contact being conductively coupled to a respective one of the silicide layers.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Hung-Ming Chih-Hao Chih-Hao
Chen Chang Yu