Harness, Dickey & Pierce, P.L.C.
Semiconductor device and method of manufacturing the same
A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.
Samsung Electronics Co., Ltd.
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Jeonggyu Jeongil Haeryong Junghwa Yongsung Myoungho Jooho Kyooho
Song Bang Kim Kim Kim Jeong Lee Jung