Marshall, Gerstein & Borun LLP
Method of forming metal wire in semiconductor device
A method of forming a metal wire in a semiconductor device is disclosed The method includes the steps of etching an insulating layer formed on a semiconductor substrate to form a dual damascene pattern, forming a barrier metal layer in the dual damascene pattern, forming a metal layer on the barrier metal layer, and filling the dual damascene pattern with a conductive material to form a metal wire.
Hynix Semiconductor Inc.
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Jung Geun Eun Soo Suk Joong
Kim Kim Kim