Fitzpatrick, Cella, Harper & Scinto
Silicon-based film formation process, silicon-based film, semiconductor device, and silicon-based film formation system
A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V1 than the ground potential; the V1 satisfying |V2|&lE;|V1|&lE;50&times;|V2|, where V2 is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state. This can provide a silicon-based film having superior characteristics at a high film formation rate, and a semiconductor device making use of this silicon-based film, having superior adherence, environmental resistance, and can enjoy a short tact time at the time of manufacture.
Canon Kabushiki Kaisha
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Y02E H01L H01L H01L Y02P H01L H01L H01L H01L Y02E H01L C23C H01L H01L H01L
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Ryo Tadashi Akira Shuichiro Hiroyuki Yoshinori Masafumi Takaharu
Hayashi Sawayama Sakai Sugiyama Ozaki Sugiura Sano Kondo