Lowe Hauptman & Ham, LLP
Metal-via fuse
The embodiments of methods and structures disclosed herein provide mechanisms of forming and programming a metal-via fuse. The metal-via fuse and a programming transistor form a one-time programmable (OTP) memory cell. The metal-via fuse has a high resistance and can be programmed with a low programming voltage, which expands the programming window.
Taiwan Semiconductor Manufacturing Company, Ltd.
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inventional additional inventional inventional
Yun-Han Wei-Li Chen-Ming Kuoyuan (Peter) Sung-Chieh
Chen Liao Hung Hsu Lin