Harness, Dickey & Pierce, P.L.C.
Transistors and methods of manufacturing the same
Transistors, and methods of manufacturing the transistors, include graphene and a material converted from graphene. The transistor may include a channel layer including graphene and a gate insulating layer including a material converted from graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from graphene. A gate of the transistor may include graphene.
SAMSUNG ELECTRONICS CO., LTD.
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Joo-ho Yong-sung Chang-seung Yong-seok
Lee Kim Lee Jung