Van Pelt, Yi & James LLP
Method of forming crystalline oxides on III-V materials
A metal oxide semiconductor field effect transistor (MOSFET) includes a substrate having a source region, a drain region, and a channel region between the source region and the drain region, the substrate having an epitaxial III-V material that includes three elements thereon, a source electrode over the source region, a drain electrode over the drain region, and a crystalline oxide layer including an oxide formed on the epitaxial III-V material in the channel region, the epitaxial III-V material including three elements.
Board of Regents, The University of Texas System Samsung Electronics Co., Ltd.
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Wei-E Mark S. Robert M. Xiaoye
Wang Rodder Wallace Qin