Jones Day
Device and method for forming resistive random access memory cell
A device includes a first word line, a resistive random access memory (RRAM) cell, a second word line, and a charge pump circuit. The RRAM cell is coupled to the first word line and is not formed. The charge pump circuit is coupled to the second word line and is configured to provide a negative voltage. Methods of forming the device are also disclosed.
Taiwan Semiconductor Manufacturing Company Limited
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Wen-Ting Yu-Wei Kuo-Ching Chih-Yang Chun-Yang
Chu Ting Huang Chang Tsai