Baker Botts L.L.P.
Method for substrate preservation during transistor fabrication
Silicon loss prevention in a substrate during transistor device element manufacture is achieved by limiting a number of photoresist mask and chemical oxide layer stripping opportunities during the fabrication process. This can be achieved through the use of a protective layer that remains on the substrate during formation and stripping of photoresist masks used in identifying the implant areas into the substrate. In addition, undesirable reworking steps due to photoresist mask misalignment are eliminated or otherwise have no effect on consuming silicon from the substrate during fabrication of device elements. In this manner, device elements with the same operating characteristics and performance can be consistently made from lot to lot.
SuVolta, Inc.
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Lance Teymur Kazushi Mitsuaki Toshifumi Urupattur C. Junji Yasunobu Dalong Pushkar Taiji
Scudder Bakhishev Fujita Hori Mori Sridharan Oh Torii Zhao Ranade Ema