Memory including non-volatile cells and current driving circuit
A memory includes (n−1) non-volatile cells, (n−1) bit lines and a current driving circuit. Each of the (n−1) non-volatile cells includes a first terminal and a second terminal. An ith bit line of the (n−1) bit lines is coupled to a first terminal of an ith non-volatile cell of the (n−1) non-volatile cells. The current driving circuit includes n first transistors coupled to the (n−1) non-volatile cells.
UNITED MICROELECTRONICS CORP.
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G11C G11C G11C G11C G11C G11C H01L G11C G11C
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Yung-Ching Yi-Ting Jen-Yu Chang-Hung Chun-Hsien Hsin-Chih Jian-Jhong Chih-Wei Cheng-Tung Jhen-Siang Bo-Chang Yu-Tse Po-Chun Shu-Ru Chun-Yen Ya-Lan
Hsieh Wu Wang Chen Huang Yu Chen Tsai Huang Wu Li Kuo Yang Wang Tseng Chiou