F. Chau & Associates LLC
Circuits and methods for changing page length in a semiconductor memory device
A semiconductor memory device having an architecture that allows a user to change a page length of the semiconductor device. Circuits and methods for changing a page length of a semiconductor device enable selective activation of one or more corresponding wordlines (having the same row address) of memory cell array blocks of a memory cell array to thereby change the page length according to a specified operational mode.
Samsung Electronics Co., Ltd.
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One-Gyun Yun-Sang
La Lee