Cantor Colburn LLP
Inner spacer formation and contact resistance reduction in nanosheet transistors
Embodiments of the invention are directed to a method of fabricating a semiconductor device. A non-limiting example of the method includes performing fabrication operations to form a nanosheet field effect transistor device, wherein the fabrication operations include forming a stack over a substrate. The stack includes alternating layers of sacrificial nanosheets and channel nanosheets over a substrate. The stack further includes lateral sidewalls having a length (L) and end sidewalls having a width (W), wherein L is greater than W. Source or drain (S/D) regions are formed along the length (L) of the lateral sidewalls.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Kangguo Peng Choonghyun Juntao
Cheng Xu Lee Li