Slater & Matsil, L.L.P.
Directional pre-clean in silicide and contact formation
A method includes etching a dielectric layer to form an opening, with an underlying region underlying the dielectric layer exposed to the opening, and performing a bombardment to bombard a surface region of the underlying region through the opening. After the bombardment, the surface region is reacted with a process gas to form a reaction layer. An anneal is then performed to remove the reaction layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Wei-Jung Chih-Wei Li-Wei Yu-Shiuan Hung-Chang Sheng-Hsuan Chun-Hsien Yu-Hung
Lin Chang Chu Wang Hsu Lin Huang Lin