Method for manufacturing TFT substrate and structure thereof
The present invention provides a method for manufacturing a TFT substrate and a structure thereof. The method for manufacturing a TFT substrate uses a gray tone mask to apply a single photolithographic process to simultaneously manufacture a gate insulation layer, a semiconductor layer, and a etch stop so as to reduce the number of the photolithographic processes used from ten processes to eight processes and reduce the number of masks used thereby simplifying the manufacturing process and effectively increasing the manufacturing efficiency and the yield rate. The TFT substrate structure of the present invention includes a gate insulation layer, a semiconductor layer, and an etch stop layer that are manufactured at the same time with a photolithographic process by using a gray tone mask so that the structure is simple, the manufacturing is easy, and the manufacturing efficiency and yield rate are effectively increased.
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
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Wenhui
Li