McClure, Qualey & Rodack, LLP
Semiconductor device and manufacturing method thereof
A method for manufacturing a semiconductor device, including forming a dummy gate structure on a substrate, in which the substrate has a source/drain portion and a channel portion adjacent to the source/drain region, and the dummy gate structure is formed on the channel portion of the substrate; recessing at least a part of the source/drain portion to form a recess in the source/drain portion of the substrate; forming a stress material in the recess; replacing the dummy gate structure with a gate stack; removing the stress material in the recess after the replacing the dummy gate structure with the gate stack; and forming an epitaxy structure in the recess.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Gwan-Sin Wai-Yi Jia-Chuan Yu-Ming Chia-Hao Chih-Hao Ching
Chang Lien You Lin Chang Wang Hsueh