Hauptman Ham, LLP
Method of forming metal gate electrode
An aspect of this description relates to a method that includes partially filling an opening in a dielectric material with a high-dielectric-constant material. The method also includes partially filling the opening with a first metal material over the high-dielectric-constant material. The method further includes filling the opening with a capping layer over the first metal material. The method additionally includes partially removing the first metal material and the capping layer in the opening using a wet etching process in a solution including one or more of H2O2, NH4OH, HCl, H2SO4 or diluted HF. The method also includes fully removing the remaining capping layer in the opening using a wet etching process in a solution includes one or more of NH4OH or diluted HF. The method further includes depositing a second metal material in the opening over the remaining first metal material.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Xiong-Fei Fan-Yi Kuang-Yuan Cheng-Hao Chun-Yuan Peng-Soon Jian-Hao Da-Yuan
Yu Hsu Hsu Hou Chou Lim Chen Lee