Haynes and Boone, LLP
Method of fabricating a gate dielectric for high-k metal gate devices
The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a substrate, forming an interfacial layer on the substrate by treating the substrate with radicals, and forming a high-k dielectric layer on the interfacial layer. The radicals are selected from the group consisting of hydrous radicals, nitrogen/hydrogen radicals, and sulfur/hydrogen radicals.
Taiwan Semiconductor Manufacturing Company, Ltd.
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inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional additional inventional inventional inventional additional inventional inventional
Chen-Hua Cheng-Hao Che-Hao Tai-Bor
Yu Hou Chang Wu