Blakely, Sokoloff, Taylor & Zafman LLP
Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains
Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
Intel Corporation
H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional additional
Ravi Mantu Prashant Jack T. Titash Gilbert Willman Marko
Pillarisetty Hudait Majhi Kavalieros Rakshit Dewey Tsai Radosavljevic