Method to define a crown shaped storage node structure, and an underlying conductive plug structure, for a dynamic random access memory cell
 A process for forming a crown shaped storage node structure, for a DRAM capacitor structure, has been developed. The process features the patterning of a top portion, of a storage node contact plug structure, after patterning of the crown shaped storage node structure, and after removal of a silicon oxide layer, used for the definition of the crown shaped storage node structure. The sequence of patterning steps allows mis-alignment between the crown shaped storage node structure, and the underlying storage node contact hole, to occur without vulnerability to insulator layers used to passivate the transfer gate transistors, of the DRAM cell. This process also features the use of a photoresist plug, used to protect a bottom shape, of the crown shaped storage node structure during the crown shaped storage node, and the storage node contact plug structure, patterning procedures. 
Taiwan Semiconductor Manufacturing Company
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H01L H01L Y10S
inventional inventional additional
Yu-Hua James Cheng-Ming
Lee Wu