Fish & Richardson P.C.
Semiconductor storage device with integrated capacitor and having transistor overlapping sections
To provide a storage device in which advantages of both a nonvolatile storage device and a volatile storage device can be obtained, a semiconductor device includes a first transistor provided in or over a substrate and a second transistor provided above the first transistor, where at least part of the first transistor and the second transistor are overlapped with each other, and a gate electrode of the first transistor and a source or drain electrode of the second transistor are electrically connected to each other. It is preferable that the first transistor be provided using single crystal silicon and the second transistor be provided using an oxide semiconductor having extremely low off-state current.
Semiconductor Energy Laboratory Co., Ltd.
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Kiyoshi Jun Shunpei
Kato Koyama Yamazaki