Method for manufacturing thin-film transistor
The present invention provides a method for manufacturing a thin-film transistor. The thin-film transistor has a bottom gate coplanar structure. The method includes the following steps: step (1): providing a substrate (20); step (2): forming a gate terminal (22) on the substrate (20); step (3): forming a gate insulator layer (24) on the gate terminal (22) and the substrate (20); step (4): forming a source/drain terminal (26) on the gate insulator layer (24) and covering the source/drain terminal (26) with a photosensitive material layer (27); step (5): subjecting a surface of the gate insulator layer (24) to a plasma treatment; step (6): removing the photosensitive material layer (27) located on the source/drain terminal (26); and step (7): forming an oxide semiconductor layer (28) on the source/drain terminal (26) and the gate insulator layer (24) and patternizing the oxide semiconductor layer (28). The present invention applies a plasma treatment to a surface of the gate insulator layer to repair defects on an interface between the gate insulator layer and the oxide semiconductor layer so as to improve the electrical characteristics of the thin-film transistor.
Shenzhen China Star Optoelectronics Technology Co., Ltd
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Chihyuan Wenhui
Tseng Li