Structure of dual gate oxide semiconductor TFT substrate
A dual gate oxide semiconductor thin-film transistor (TFT) substrate includes a substrate; a bottom gate positioned on the substrate; a bottom gate isolation layer positioned on the substrate and the bottom gate; a first oxide semiconductor layer positioned on the bottom gate isolation layer above the bottom gate; an oxide conductor layer positioned on the bottom gate isolation layer at one side of the first oxide semiconductor layer; a top gate isolation layer positioned on the first oxide semiconductor layer, the oxide conductor layer, and the bottom gate isolation layer; a top gate positioned on the top gate isolation layer above a middle part of the first oxide semiconductor layer; a source and a drain positioned on the top gate isolation layer at two sides of the top gate; and a passivation layer positioned on the top gate isolation layer, the source, the drain, and the top gate.
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
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Xiaowen Chihyu Shimin Wenhui Chihyuan Hejing Longqiang
Lv Su Ge Li Tseng Zhang Shi