Muir Patent Law, PLLC
Nanostructure semiconductor light-emitting device
There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group.
SAMSUNG ELECTRONICS CO., LTD.
H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H05B H01L H01L H01L
additional inventional inventional additional additional additional inventional inventional inventional additional inventional inventional
Yeon Woo Jae Hyeok Dae Myung Jung Sub Sam Mook Han Kyu Jin Sub Young Jin
Seo Heo Chun Kim Kang Seong Lee Choi