Dickinson Wright PLLC
Method for fabricating conductive line on a wafer
A method for fabricating an Al&#8212;Si&#8212;containing alloy line, which is adapted to form a conductive line on a substrate, is described. A first conductive layer, a second conductive layer and an Al&#8212;Si&#8212;containing alloy layer are sequentially formed on the substrate. Then, the substrate temperature is rapidly lowered to between about 0&deg; C. and 25&deg; C. in about 1 second to 10 seconds. A patterned photo-resist layer is formed on the third conductive layer. The patterned photo-resist layer is used as a mask, and the third conductive layer, the Al&#8212;Si&#8212;containing alloy layer, the second conductive layer and the first conductive layer are etched to form the conductive line.
Winbond Electronics Corporation
H H
H01L H01L
inventional inventional
Ching-Tsai
Chang