Kilpatrick Townsend and Stockton LLP
Method and device for high k metal gate transistors
A method of manufacturing a semiconductor device includes providing a semiconductor substrate. The semiconductor substrate includes a dummy gate structure formed thereon and an offset spacer formed on a sidewall of the dummy gate structure. The method further includes removing the dummy gate structure to form a gate trench, forming a high-k dielectric layer on the bottom and the sidewall of the gate trench, and forming a cover layer over the high-k dielectric layer. The cover layer has a thickness that is greater at the corners of the bottom of the gate trench than in the middle region of the bottom of the gate trench.
Semiconductor Manufacturing International (Shanghai) Corporation
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Yong Xiao Na
Li Wang