Arch & Lake LLP
Selective growth of nitride buffer layer
According to at least some embodiments of the present disclosure, a method of manufacturing semiconductor wafers comprises: selectively growing a nitride buffer layer on a first surface of a patterned substrate, the patterned substrate including at least the first surface and a second surface; and growing an epitaxial layer on the nitride buffer layer, wherein a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate. The epitaxial layer does not include multiple crystal surfaces having different crystal growth directions that cause a stress at a junction interface where the crystal surfaces having the different crystal growth directions meet.
Xiamen Changelight Co., Ltd.
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Kaixuan Aimin Xiangjing Zhiwei Gang
Chen Wang Zhou Lin Yao