Tung & Associates
Method for forming a tapered dual damascene via portion with improved performance
A method for selectively anisotropically a semiconductor feature to form a tapered sidewall profile including providing a semiconductor wafer including an anisotropically etched feature formed in at least one dielectric insulating layer including a relatively larger width dimension portion overlying and encompassing at least one relatively smaller diameter dimension portion the smaller diameter dimension portion further including a bottom portion including an overlying liner; and, selectively anisotropically etching the anisotropically etched feature according to a reactive ion etching (RIE) process to form a tapered sidewall portion of the at least one relatively smaller diameter portion.
Taiwan Semiconductor Manufacturing Co. Ltd.
H H
H01L H01L
inventional inventional
Chih-Fu Yu-Chun
Chang Huang