Parkhurst, Wendel & Rossi
Method of forming fine structure on compound semiconductor with inclined ion beam etching
 A first method of forming a fine structure on a compound semiconductor for providing vertical side wall surfaces of a wire is as follows: One side wall surface of a wire is formed by applying an ion beam for etching with a predetermined incident angle on the side of this side wall surface to a surface of a compound semiconductor layer having a multiquantum well structure, covered with a first mask to from this side wall surface; and then, the other side wall surface is formed by applying the ion beam with the predetermined incident angle from the side of the other side wall surface to be formed after removal of the first mask and forming a second mask for forming the other side wall surface. In a second method, a third mask having a stripe pattern is formed on the surface of the compound semiconductor; one side of the wire is formed by first etching with the slantwise incident ion beam. The second etching is also formed similarly by the ion beam with the one side wall surface is protected. In the third method, a substantially circle mask is formed; and etched with the slantwise incident ion beam with the work being rotated. 
Matsushita Electric Industrial Co., Ltd.
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Yukio Hitomaro Shinichi
Toyoda Tougou Wakabayashi