Maschoff Brennan
High light absorption structure for semiconductor image sensor
A semiconductor device is operated for sensing incident light and includes a carrier, a device layer, and a semiconductor layer. The device layer is disposed on the carrier. The semiconductor layer is disposed on the device layer. The semiconductor layer includes light-sensing regions. The semiconductor layer has a first surface and a second surface opposite to the first surface that is adjacent to the device layer. The second surface has a lattice plane which is tilted with respect to a basal plane, and the semiconductor layer has various pit portions arranged on the second surface.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chun-Hao Kuo-Cheng Yun-Wei
Chou Lee Cheng