Jianq Chyun IP Office
Transistor-type pressure sensor and method for fabricating the same
A transistor-type pressure sensor is provided, having an upper and a lower substrates, a source/drain formed on the lower substrate and separated from each other, a channel layer formed between and on the source/drain, a dielectric layer and a gate. The gate is substantially formed between the source and the drain. The surface of the gate, being in contact with the dielectric layer, has a stepped surface profile, so that the channel length/width ratio can be changed due to the pressure sensed by the pressure sensor.
Industrial Technology Research Institute
G
G01L
inventional
Chao-Feng Chih-Wei Chao-Kai Yuh-Zheng
Sung Chu Cheng Lee