Maschoff Brennan
Semiconductor structure having trench and manufacturing method thereof
A method for manufacturing a semiconductor structure is provided. A plurality of trenches are formed in a substrate. The trenches define at least one fin therebetween. The fin is hydrogen annealed. A dielectric material is formed in the trenches. The dielectric material in the trenches is recessed.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Cheng-Ta Shiu-Ko Chen-Cheng
Wu Jangjian Chou