Muncy, Geissler, Olds & Lowe, P.C.
Resistive memory
A resistive memory including a storage array, a storage circuit, a control circuit, a voltage generation circuit and an access circuit is provided. The storage array includes a plurality of blocks. Each block includes a plurality of memory cells. The storage circuit stores a plurality of count values. Each of the count values indicates the number of times that a corresponding block performs a write operation. The control circuit generates a control signal according to the count values when an external command is a write command. The voltage generation circuit provides an operation voltage group according to the control signal. The access circuit accesses the storage array according to the operation voltage group.
WINBOND ELECTRONICS CORP.
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Chia Hua Ping-Kun Seow-Fong Chien-Min He-Hsuan Frederick Shao-Ching
Ho Wang Lim Wu Chao Chen Liao