Fitzpatrick, Cella, Harper & Scinto
Dry etching method for oxide semiconductor film
Provided is a dry etching method for an oxide semiconductor film made of In—Ga—Zn—O, in which an etching gas containing a hydrocarbon is used in a dry etching process for the oxide semiconductor film made of In—Ga—Zn—O formed on a substrate.
Canon Kabushiki Kaisha
H H H Y H
H01L H01L H01L Y02E H01L
inventional inventional inventional additional inventional
Chienliu
Chang