Birch, Stewart, Kolasch & Birch, LLP
Fin field effect transistor (FinFET) device structure and method for forming the same
A fin field effect transistor (FinFET) device structure is provided. The FinFET structure includes a substrate, and the substrate includes a first region and a second region. The FinFET structure includes a first plurality of fin structures formed on the first region and a second plurality of fin structures formed on the second region. A density of the first plurality of fin structures is greater than a density of the second plurality of fin structures. The FinFET structure also includes a plurality of protruding structures between two adjacent second plurality of fin structures in the second region and an isolation structure formed on the substrate. The isolation structure has a gap height between the first plurality of fin structures and the second plurality of fin structures.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
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inventional inventional inventional inventional
Chai-Wei Yi-Cheng Jung-Jui Po-Chi
Chang Chao Li Wu