Schwabe, Williamson & Wyatt, P.C.
Wide band gap transistor on non-native semiconductor substrate
Techniques are disclosed for forming a GaN transistor on a semiconductor substrate. An insulating layer forms on top of a semiconductor substrate. A trench, filled with a trench material comprising a III-V semiconductor material, forms through the insulating layer and extends into the semiconductor substrate. A channel structure, containing III-V material having a defect density lower than the trench material, forms directly on top of the insulating layer and adjacent to the trench. A source and drain form on opposite sides of the channel structure, and a gate forms on the channel structure. The semiconductor substrate forms a plane upon which both GaN transistors and other transistors can form.
Intel Corporation
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Han Wui Ravi Robert S. Sanaz Sansaptak Benjamin Marko Seung Hoon
Then Pillarisetty Chau Gardner Dasgupta Chu-Kung Radosavljevic Sung