Slater & Matsil, L.L.P.
Integrated circuit structures with multiple FinFETs
A semiconductor structure includes a semiconductor substrate; and a first Fin field-effect transistor (FinFET) and a second FinFET at a surface of the semiconductor substrate. The first FinFET includes a first fin; and a first gate electrode over a top surface and sidewalls of the first fin. The second FinFET includes a second fin spaced apart from the first fin by a fin space; and a second gate electrode over a top surface and sidewalls of the second fin. The second gate electrode is electrically disconnected from the first gate electrode. The first and the second gate electrodes have a gate height greater than about one half of the fin space.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Tsung-Lin Fu-Liang Sheng-Da Chang-Yun
Lee Yang Liu Chang