F. Chau & Associates, LLC
Semiconductor device and method of fabricating the same
A semiconductor device is provided as follows. A first fin-type pattern is disposed on a substrate. A first field insulating film is adjacent to a sidewall of the first fin-type pattern. A second field insulating film is adjacent to a sidewall of the first field insulating film. The first field insulating film is interposed between the first fin-type pattern and the second field insulating film. The second field insulating film comprises a first region and a second region. The first region is closer to the sidewall of the first field insulating film. A height from a bottom of the second field insulating film to an upper surface of the second region is larger than a height from the bottom of the second field insulating film to an upper surface of the first region.
SAMSUNG ELECTRONICS CO., LTD.
H H H
H01L H01L H01L
inventional inventional inventional
Sang-Jin Seung-Jae Dae-Young Kyung-Seok
Hyun Lee Kwak Oh