Schwabe, Williamson & Wyatt, P.C.
Fabrication of wrap-around and conducting metal oxide contacts for IGZO non-planar devices
Embodiments of the invention include non-planar InGaZnO (IGZO) transistors and methods of forming such devices. In an embodiment, the IGZO transistor may include a substrate and an IGZO fin formed above the substrate. Embodiments may include a source contact and a drain contact that are formed adjacent to more than one surface of the IGZO fin. Additionally, embodiments may include a gate electrode formed between the source contact and the drain contact. The gate electrode may be separated from the IGZO layer by a gate dielectric. In one embodiment, the IGZO transistor is a finfet transistor. In another embodiment the IGZO transistor is a nanowire or a nanoribbon transistor. Embodiments of the invention may also include a non-planar IGZO transistor that is formed in the back end of line stack (BEOL) of an integrated circuit chip.
Intel Corporation
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Jack T. Gilbert Van H. Marko Rafael
Kavalieros Dewey Le Radosavljevic Rios