Posz Law Group, PLC
Semiconductor apparatus having lateral type MIS transistor
A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor.
DENSO CORPORATION
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Takashi Nozomu Shigeki Makoto Tetsuo Yasushi Yoshiyuki
Nakano Akagi Takahashi Kuwahara Fujii Higuchi Hattori