Harness, Dickey & Pierce, P.L.C.
Method of manufacturing a non-volatile memory device
In a method of manufacturing a non-volatile memory device, a tunnel insulating layer may be formed on a channel region of a substrate. A charge trapping layer including silicon nitride may be formed on the tunnel insulating layer to trap electrons from the channel region. A heat treatment may be performed using a first gas including nitrogen and a second gas including oxygen to remove defect sites in the charge trapping layer and to densify the charge trapping layer. A blocking layer may be formed on the heat-treated charge trapping layer, and a conductive layer may then formed on the blocking layer. The blocking layer, the conductive layer, the heat-treated charge trapping layer and the tunnel insulating layer may be patterned to form a gate structure on the channel region. Accordingly, data retention performance and/or reliability of a non-volatile memory device including the gate structure may be improved.
Samsung Electronics Co., Ltd.
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Seung-Hwan Si-Young Hong-Suk Han-Mei In-Sun Seung-Jae Ki-Hyun Sun-Jung Kwang-Min
Lee Choi Kim Choi Yi Baik Hwang Kim Park