Blakely, Sokoloff, Taylor & Zafman LLP
Methods to enhance doping concentration in near-surface layers of semiconductors and methods of making same
A die includes a semiconductive prominence and a surface-doped structure on the prominence. The surface-doped structure makes contact with contact metallization. The prominence may be a source- or drain contact for a transistor. Processes of making the surface-doped structure include wet-vapor- and implantation techniques, and include annealing techniques to drive in the surface doping to only near-surface depths in the semiconductive prominence.
Intel Corporation
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Niti Marko Niloy Robert S. Matthew V. Sanaz Gilbert
Goel Radosavljevic Mukherjee Chau Metz Kabehie Dewey