Fujitsu Patent Center
Semiconductor device and method of manufacturing the same
A ferroelectric capacitor formed above a semiconductor substrate includes a lower electrode, a dielectric film (ferroelectric film) having ferroelectric characteristics, and an upper electrode. The upper electrode includes a conductive oxide film made of a ferroelectric material to which conductivity is provided by adding a conductive material such as Ir, and the conductive oxide film is in contact with the dielectric film.
Fujitsu Semiconductor Limited
H H
H01L H01L
inventional inventional
Wensheng
Wang