Anova Law Group, PLLC
Magnetic random access memory cell and method for forming a magnetic random access memory
A magnetic random access memory cell and a method for forming a magnetic random access memory are provided. The memory cell includes a substrate including a plurality of active regions and a plurality of isolation regions each between adjacent active regions. The memory cell also includes a gate structure over each active region, and a word line structure over each isolation region. In addition, the memory cell includes a source region and a drain region in the substrate on both sides of the gate structure, and a dielectric structure over the substrate. The gate structure and the word line structure are located in the dielectric structure. Further, the memory cell includes a source line structure located in the dielectric structure and electrically connected to the source region over each active region. The word line structure, the gate structure, and the source line structure are parallel to each other.
Semiconductor Manufacturing International (Beijing) Corporation Semiconductor Manufacturing International (Shanghai) Corporation
G H G H G
G11C H01L G11C H01L G11C
inventional inventional inventional inventional inventional
Xiaohua Yu
Li Li