McDermott Will & Emery LLP
Field effect transistor and an operation method of the field effect transistor
A field effect transistor includes a silicon substrate, a source electrode and a drain electrode which are formed in upper portions of the silicon substrate, and an insulator film, a PCMO film, and a gate electrode which are formed on part of the silicon substrate sandwiched between the source electrode and the drain electrode. Data writing is performed by changing a voltage level of a write voltage applied to the PCMO film, and data reading is performed by applying a read voltage to the PCMO film and detecting a drain current.
Panasonic Corporation
H H
H01L H01L
inventional inventional
Kazunori
Isogai