Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Low substrate-noise electrostatic discharge protection circuits with bi-directional silicon diodes
An integrated circuit device that includes a plurality of electrostatic discharge clamp circuits, variously coupled to VDD, VSS and transistor, having at least one bi-directional silicon diode that includes a first silicon diode and a second silicon diode, wherein an n-type portion of the first silicon diode is coupled to a p-type portion of the second silicon diode and a p-type portion of the first silicon diode is coupled to an n-type portion of the second silicon diode, responsive to either a positive electrostatic discharge or a negative electrostatic discharge to provide electrostatic discharge protection.
Industrial Technology Research Institute
Y H
Y10S H01L
additional inventional
Ming-Dou Chyh-Yih
Ker Chang