Semiconductor light emitting device
A light emitting device is provided. The light emitting device includes a substrate, an N type semiconductor layer formed on the substrate, an active layer, an electron-blocking layer, and a P type semiconductor layer formed on the electron-blocking layer. An N side electrode is formed on a first portion of the N type semiconductor layer, and the active layer is formed on a second portion of the N type semiconductor layer. The electron-blocking layer is a super lattice multi-layer structure formed on the active layer, the P type semiconductor layer is formed on the electron-blocking layer, and a P side electrode is formed on a portion of the P type semiconductor layer.
NATIONAL CHIAO TUNG UNIVERSITY
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Zhen-Yu Hao-Chung Chun-Yen
Li Kuo Chang