Hauptman Ham, LLP
Metal gate transistor, integrated circuits, systems, and fabrication methods thereof
An integrated circuit includes a substrate, a first inter-layer dielectric (ILD) layer over the substrate, and a gate strip having a first width formed in the first ILD layer. A conductive strip having a second width is provided on the gate strip, with the second width being greater than the first width. The conductive strip is positioned so that the gate strip is covered and a portion of the conductive strip extends over a top surface of the first ILD adjacent the gate strip. A second ILD layer is provided over the conductive strip and the first ILD layer with a contact plug extending through the second ILD layer to provide electrical contact to the conductive strip.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Chun-Hung Alex Jye-Yen Hua-Chou Chih-Ping Chien-Chih Chia-Yi Harry-Hak-Lay
Chen Kalnitsky Cheng Tseng Chao Ho Su Chuang