Harness, Dickey & Pierce, P.L.C.
Method for forming silicon film, method for forming pn junction and pn junction formed using the same
A method for forming a silicon film may be performed using a microheater including a substrate and a metal pattern spaced apart from the substrate. The silicon film may be formed on the metal pattern by applying a voltage to the metal pattern of the microheater to heat the metal pattern and by exposing the microheater to a source gas containing silicon. The silicon film may be made of polycrystalline silicon. A method for forming a pn junction may be performed using a microheater including a substrate, a conductive layer on the substrate, and a metal pattern spaced apart from the substrate. The pn junction may be formed between the metal pattern and the conductive layer by applying a voltage to the metal pattern of the microheater to heat the metal pattern. The pn junction may be made of polycrystalline silicon.
Samsung Electronics Co., Ltd.
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Junhee Andrei
Choi Zoulkarneev