Blakely, Sokoloff, Taylor & Zafman LLP
Group III-N nanowire transistors
A group III-N nanowire is disposed on a substrate. A longitudinal length of the nanowire is defined into a channel region of a first group III-N material, a source region electrically coupled with a first end of the channel region, and a drain region electrically coupled with a second end of the channel region. A second group III-N material on the first group III-N material serves as a charge inducing layer, and/or barrier layer on surfaces of nanowire. A gate insulator and/or gate conductor coaxially wraps completely around the nanowire within the channel region. Drain and source contacts may similarly coaxially wrap completely around the drain and source regions.
Intel Corporation
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Jack Ravi Robert Matthew Benjamin Gilbert Marko Han Wui Niloy
Kavalieros Pillarisetty Chau Metz Chu-Kung Dewey Radosavljevic Then Mukherjee