Patterson + Sheridan, LLP
Methods for gapfill in substrates
The present disclosure provides methods for treating film layers in a substrate including positioning the substrate in a processing volume of a processing chamber. The substrate can have high aspect ratio features extending a depth from a substrate surface to a bottom surface. The feature can have a width defined by a first sidewall and a second sidewall. A film with a composition that includes metal is formed on the substrate surface and the first sidewall, the second sidewall, and the bottom surface of each feature. The film in the feature can have a seam extending substantially parallel to the first and second sidewalls. The film is annealed and exposed to an oxygen radical while converting the metal of the film to a metal oxide. The metal oxide is exposed to a hydrogen radical while converting the metal oxide to a metal fill layer.
Applied Materials, Inc.
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Yixiong Srinivas Wei Yuan-hui Jacqueline Samantha Wen Ting Yongjing ShihChung
Yang Gandikota Liu Lo Wrench Chen Lin Chen