Haynes and Boone, LLP
Grafting design for pattern post-treatment in semiconductor manufacturing
A method for lithography patterning includes forming an opening in a first layer over a substrate and coating a grafting solution over the first layer and filling in the opening. The grafting solution comprises a grafting compound and a solvent. The grafting compound comprises a grafting unit chemically bonded to a linking unit chemically bonded to a polymer backbone. The linking unit comprises an alkyl segment. The grafting unit is attachable to the first layer. The method further includes curing the grafting solution so that a first portion of the grafting compound is attached to a surface of the first layer, thereby forming a second layer over the surface of the first layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H G H
H01L G03F H01L
inventional inventional inventional
Siao-Shan Ching-Yu Chin-Hsiang
Wang Chang Lin