Patterson & Sheridan, L.L.P.
Light emitting diodes (LEDs) with improved light extraction by roughening
Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
SemiLEDs Optoelectronics Co., Ltd.
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inventional additional additional inventional
Wen-Huang Chen-Fu Hao-Chun Chao-Chen Feng-Hsu
Liu Chu Cheng Cheng Fan