Nath & Associates PLLC
Method for manufacturing a complementary metal-oxide semiconductor sensor
A method for manufacturing a complementary metal-oxide semiconductor sensor is provided. The present method provides a semiconductor structure including a plurality of conductors thereon. An inter-metal dielectric layer is formed on the conductors. A silicon nitride film is applied on the inter-metal dielectric layer. An oxide layer is formed on the silicon nitride film. The oxide layer, the silicon nitride film and the inter-metal dielectric are etched to expose portions of the conductors. The oxide layer and the exposed conductors are cleaned in a cleaning step later.
United Microelectronics Corp.
H H
H01L H01L
inventional inventional
Chih-Sheng Nien-Chung Chi-Rong
Chang Jiang Lin