WPAT., P.C.
Method of forming MOS device
A method for forming a metal-oxide-semiconductor (MOS) device includes at least steps of forming a pair of trenches in a substrate at both sides of a gate structure, filling the trenches with a silicon germanium layer by a selective epitaxy growth process, forming a cap layer on the silicon germanium layer by a selective growth process, and forming a pair of source/drain regions by performing an ion implantation process. Hence, the undesirable effects caused by ion implantation can be mitigated.
United Microelectronics Corp.
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Chih-Chiang Kun-Hsien Wen-Han Cheng-Tung Shih-Chieh Chung-Min Meng-Yi Shyh-Fann Tzyy-Ming Li-Shian
Wu Lee Hung Huang Hsu Shih Wu Ting Cheng Jeng