WPAT, P.C., Intellectual Property Attorneys
Semiconductor structures
The present disclosure relates to a semiconductor structure which includes a first row of diffusion strap having two sections separated by a first distance, a second row of diffusion strap having two sections separated by the first distance, a third row of diffusion strap having two sections separated by the first distance, a fourth row of diffusion strap having two sections separated by the first distance, a first row of conductive strap over the first row of diffusion strap and the second row of diffusion strap, and a second row of conductive strap over the third row of diffusion strap and the fourth row of diffusion strap. The first row of conductive strap has two sections separated by a second distance. The second row of conductive strap has having two sections separated by the second distance, wherein the second distance is greater than the first distance.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
G H H G H H H H
G11C H01L H01L G11C H01L H01L H01L H01L
additional inventional inventional additional inventional inventional inventional inventional
Yu Hsiang Liang-Chuan Shao-Yu Chun-Hao
Chen Chang Chou Chang