Haynes and Boone, LLP
Source/drain contact having a protruding segment
A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Jui-Lin Ping-Wei Fu-Kai Chao-Yuan I-Wen Shih-Hao Ting
Chen Wang Yang Chang Wu Lin Fang