Myers Bigel, P.A.
Power switching devices with DV/DT capability and methods of making such devices
Power switching devices include a semiconductor layer structure that has an active region and an inactive region. The active region includes a plurality of unit cells and the inactive region includes a field insulating layer on the semiconductor layer structure and a gate bond pad on the field insulating layer opposite the semiconductor layer structure. A gate insulating pattern is provided on the semiconductor layer structure between the active region and the field insulating layer, and at least one source/drain contact is provided on the semiconductor layer structure between the gate insulating pattern and the field insulating layer.
Cree, Inc.
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Qingchun Sei-Hyung Adam Brett
Zhang Ryu Barkley Hull