McDermott Will & Emery LLP
Nitride semiconductor device
There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
Samsung Electronics Co., Ltd.
B B H H
B82Y B82Y H01L H01L
inventional inventional inventional inventional
Seong Suk Jae Woong Cheol Soo Hee Seok Soo Min
Lee Han Sone Park Lee