Slater Matsil, LLP
Gate formation with varying work function layers
A structure and a method of forming are provided. A first work function layer is formed over a first fin and terminates closer to the first fin than an adjacent second fin. A second work function layer is formed over the first work function layer and terminates closer to the second fin than the adjacent second fin. A third work function layer is formed over the first work function layer and the second fin. A conductive layer is formed over the third work function layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Han-Wei Stan Jin-Dah
Wu Chen Chen