Volentine Francos, PLLC
Method of forming an aluminum film for use in manufacturing a semiconductor device
A method of manufacturing a semiconductor device is capable of preventing a local delamination at the interface between an aluminum film and an anti-reflective layer formed thereon. After aluminum is deposited on a substrate, the aluminum film is slowly cooled. Then, the substrate is left as is for more than 3 minutes before a venting process takes place in which thermal energy is generated. Then, an anti-reflective layer is formed on the aluminum film. Thermal stress in the aluminum film is relieved by the slow cooling of the aluminum film and the delay before the venting process. Accordingly, when a thermal process is carried out after the anti-reflective layer is formed on the aluminum film, little shear stress is generated at the interface between the aluminum film and the anti-reflective layer.
Samsung Electronics Co., Ltd.
H
H01L
inventional
Seung-Hwan Jong-Yong
Lee Bae