Pollock, Vande Sande & Priddy
Process for reducing the interdiffusion of conductors and/or semiconductors in contact with each other
 The interdiffusion at the interface between a metallic-type conductor or semiconductor and a second metallic-type conductor or semiconductor in intimate contact therewith due to elevated temperatures is reduced by subjecting a surface of at least one of the materials when at an elevated temperature to a gas which contains at least one component which changes the surface potential and work function of the surface which is subjected to the gas in a direction according to the relative electronegativities of the materials. 
International Business Machines Corporation
Y H
Y10T H01L
additional inventional
Chin-An
Chang