Maschoff Brennan
Semiconductor device and manufacturing method thereof
A semiconductor device includes a first substrate, a second substrate, a plurality of through vias (TVs), and a plurality of conductive caps. The first substrate has at least one electrical component disposed thereon. The second substrate is stacked on the first substrate. The TVs extend through the second substrate to be electrically connected to the at least one electrical component of the first substrate. The conductive caps respectively cover the TVs, and the conductive caps are electrically isolated from each other.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Yung-Lung Kuo-Cheng Yun-Wei Chun-Hao Feng-Chi
Hsu Lee Cheng Chou Hung