Memory access module for performing a plurality of sensing operations to generate digital values of a storage cell in order to perform decoding of the storage cell
A method for performing memory access includes: performing a first sensing operation corresponding to a first sensing voltage and performing at least a second sensing operation corresponding to a second sensing voltage to respectively generate a first digital value of a Flash cell of a Flash memory and a second digital value of the Flash cell of the Flash memory; using the first digital value, the second digital value, and charge distribution statistics information of the Flash memory to obtain soft information of a bit stored in the Flash cell, wherein the soft information corresponds to a threshold voltage of the Flash cell; and using the soft information to perform soft decoding.
Silicon Motion, Inc.
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Hsiao-Te Wen-Long Tsung-Chieh
Chang Wang Yang