Method for measuring an effective channel length of a MOSFET
A first compensation factor, a second compensation factor and a third compensation factor are provided to improve a capacitance-voltage (C-V) method for measuring an effective channel length of a metal-oxide-semiconductor field effect transistor (MOSFET), and an overlap length of a gate and a source and a drain of the transistor. The first compensation factor is calculated by measuring two unit length gate capacitances of the transistor. The second compensation factor is calculated by measuring two unit length overlap capacitances of the transistor. The third compensation factor is a ratio of the second compensation factor to the first compensation factor.
United Microelectronics Corp.
H
H01L
inventional
Shih-Chieh Gary Heng-Sheng Yueh-Hsun
Lin Hong Huang Lee