Finnegan, Henderson, Farabow, Garrett and Dunner
Method for forming thin film of refractory material
 In a method for forming a thin film of a refractory metal on a substrate having a silicon layer and an insulating layer on a surface thereof, a halogen compound of the refractory metal is mixed with hydrogen gas for providing a material gas, hydrogen halide gas or a halogen gas consisting of a second halogen less electronegative than the first halogen forming the halogen compound of the refractory metal is added to the material gas, and by use of the thus obtained mixed gas, vapor phase deposition refractory metal is effected selectively on the surface of the silicon layer of the substrate. 
Kabushiki Kaisha Toshiba
C H H C
C23C H01L H01L C23C
inventional inventional inventional inventional
Hitoshi Takahiko
Ito Moriya