Blakely, Sokoloff, Taylor & Zafman LLP
Deep gate-all-around semiconductor device having germanium or group III-V active layer
Deep gate-all-around semiconductor devices having germanium or group III-V active layers are described. For example, a non-planar semiconductor device includes a hetero-structure disposed above a substrate. The hetero-structure includes a hetero-junction between an upper layer and a lower layer of differing composition. An active layer is disposed above the hetero-structure and has a composition different from the upper and lower layers of the hetero-structure. A gate electrode stack is disposed on and completely surrounds a channel region of the active layer, and is disposed in a trench in the upper layer and at least partially in the lower layer of the hetero-structure. Source and drain regions are disposed in the active layer and in the upper layer, but not in the lower layer, on either side of the gate electrode stack.
Intel Corporation
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Marko Willy Jessica S. Gilbert Han Wui Jack T. Ravi Niloy Benjamin Van H. Seung Hoon
Radosavljevic Rachmady Kachian Dewey Then Kavalieros Pillarisetty Mukherjee Chu-Kung Le Sung