Haynes and Boone, LLP
Structure and method for SRAM FinFET device having an oxide feature
The present disclosure provides an embodiment of a fin-like field-effect transistor (FinFET) device. The device includes a substrate having an n-type FinFET (NFET) region and a p-type FinFET (PFET) region. The device also includes a first and a second fin structures over the substrate in the NFET region and a third fin structure over the substrate in the PFET region. The device also includes a first high-k (HK)/metal gate (MG) stack in the NFET region, including wrapping over a portion of the first fin structure, a first subset of the first source/drain (S/D) features, adjacent to the first HK/MG stack, over the recessed first fin structure and a second subset of the first S/D features partially over the recessed second fin structure and partially over the recessed first fin structure.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chih-Sheng Ka-Hing Kuo-Cheng Zhiqiang
Chang Fung Ching Wu