Oblon, McClelland, Maier & Neustadt, L.L.P.
Semiconductor device and method for manufacturing same
According to one embodiment, the circuit portion includes a transistor provided at a region separated from the first stacked portion in the substrate. The second stacked portion is provided above the circuit portion. The second stacked portion includes a plurality of first layers and a plurality of second layers. The first layers and the second layers include a first layer and a second layer stacked alternately. An insulating layer is provided above the circuit portion and provided above the substrate between the first stacked portion and the second stacked portion. A height of an uppermost first layer of the second stacked portion from a surface of the substrate is substantially equal to a height of an uppermost electrode layer of the first stacked portion from the surface of the substrate, or is higher than the height of the uppermost electrode layer.
TOSHIBA MEMORY CORPORATION
H H H H H H H
H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional
Yuji
Setta