Winkle, PLLC
Group III-V devices with multiple spacer layers
A group III-V material device has multiple spacer regions above a quantum well channel region. A high-k value gate dielectric is formed on an InGaAs spacer above the quantum well channel region while there are InAlAs spacer regions under contact regions.
Intel Corporation
H B H H H H
H01L B82Y H01L H01L H01L H01L
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Marko Gilbert Mantu K. Ravi
Radosavljevic Dewey Hudait Pillarisetty