Magnetic storage element utilizing improved pinned layer stack
A magnetic tunnel junction (MTJ) storage element may comprise a pinned layer stack and a first functional layer. The pinned layer stack is formed of a plurality of layers comprising a bottom pinned layer, a coupling layer, and a top pinned layer. The first functional layer is disposed in the bottom pinned layer or the top pinned layer.
QUALCOMM Incorporated
H
H01L
inventional
Seung H. Xia Xiaochun Wei-Chuan
Kang Li Zhu Chen