Osha Liang LLP
Light emitting diode structure having superlattice with reduced electron kinetic energy therein
A light emitting diode structure and a method of forming a light emitting diode structure are provided. The structure includes a superlattice comprising, a first barrier layer; a first quantum well layer comprising a first metal-nitride based material formed on the first barrier layer; a second barrier layer formed on the first quantum well layer; and a second quantum well layer including the first metal-nitride based material formed on the second barrier layer; and wherein a difference between conduction band energy of the first quantum well layer and conduction band energy of the second quantum well layer is matched to a single or multiple longitudinal optical phonon energy for reducing electron kinetic energy in the superlattice.
Agency for Science, Technology and Research
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H01L H01L H01L
additional inventional additional
Chew Beng Jing Hua Wei Soo Jin
Soh Teng Liu Chua