LRK Patent Law Firm
Method for implanted-ion assisted growth of metal oxide nanowires and patterned device fabricated using the method
An embodiment of the present disclosure provides a method of growing metal oxide nanowires by ion implantation, the method including the steps of: depositing a metal oxide thin film on a substrate; implanting ions into the metal oxide thin film; and heating the ion-implanted metal oxide thin film to grow metal oxide nanowires.
INDUSTRY-ACADEMIC COOPERATION FOUNDATION YONSEI UNIVERSITY
C Y C C C
C23C Y10T C23C C23C C23C
inventional additional inventional inventional inventional
Jongbaeg Kyoung Hoon Dae-Hyun Jaesam Hyungjoo Jungwook
Kim Lee Baek Sim Na Choi