Phase-change random access memory device and method of manufacturing the same
Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.
Electronics and Telecommunications Research Institute
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Sung Min Kyu-Jeong Byoung-Gon Seung-Yun Young Sam Nam-Yeal
Yoon Choi Yu Lee Park Lee