Wood, Herron & Evans, LLP
Bi-directional silicon controlled rectifier structure
Fabrication methods for bi-directional silicon controlled rectifier device structures. A well of a first conductivity type is formed in a device region, which may be defined from a device layer of a semiconductor-on-insulator substrate. An anode of a first silicon controlled rectifier is formed in the first well. A cathode of a second silicon controlled rectifier is formed in the first well. The anode of the first silicon controlled rectifier has the first conductivity type. The cathode of the second silicon controlled rectifier has a second conductivity type opposite to the first conductivity type.
International Business Machines Corporation
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James P. Robert J. Junjun
Di Sarro Gauthier, Jr. Li