Harness, Dickey & Pierce, P.L.C.
Methods of manufacturing semiconductor devices including an oxide layer
In a method of forming an oxide layer of a semiconductor process, a preliminary precursor flow is provided on a substrate in a deposition chamber to form a preliminary precursor layer, a precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on the preliminary precursor layer, and a second oxidizing agent flow is provided on the precursor layer or the first oxidizing agent layer alternately stacked to form a second oxidizing agent layer.
Samsung Electronics Co., Ltd.
H H H H H H C H C C H
H01L H01L H01L H01L H01L H01L C23C H01L C23C C23C H01L
inventional inventional additional inventional inventional inventional inventional inventional inventional inventional additional
Jung-Ho Eun-Yeoung Jung-Geun Eun-Young Jin-Gyun Koong-Hyun Sung-Hae Dong-Kyum Ki-Hyun Hyun-Yong
Kim Choi Jee Lee Kim Nam Lee Kim Hwang Go