Anova Law Group, PLLC
Semiconductor structure and fabrication method thereof
A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a base substrate, and forming an interlayer dielectric layer on the base substrate and having an opening exposing surface portions of the base substrate. The method also includes forming a stacked structure on a bottom and sidewall of the opening and on a top of the interlayer dielectric layer. In addition, the method includes removing at least a first portion of the stacked structure from the top of the interlayer dielectric layer. Further, the method includes performing an annealing treatment on the base substrate, and forming a gate structure by filling the opening with a metal layer.
Semiconductor Manufacturing International (Beijing) Corporation Semiconductor Manufacturing International (Shanghai) Corporation
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Yong
Li