Lowe Hauptman & Ham, LLP
Resistive random access memory (RRAM) structure and method of making the RRAM structure
The present disclosure provides a resistive random access memory (RRAM) cell. The RRAM cell includes a transistor, a bottom electrode adjacent to a drain region of the transistor and coplanar with the gate, a resistive material layer on the bottom electrode, a top electrode on the resistive material layer, and a conductive material connecting the bottom electrode to the drain region.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chih-Yang Wen-Ting Chin-Chieh Yu-Wen Hsia-Wei Kuo-Chi
Chang Chu Yang Liao Chen Tu