Myers Bigel Sibley & Sajovec
Methods of manufacturing nonvolatile memory devices
Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to the active pillar, the charge storage layer being disposed between the active pillar and the gates. Before depositing a gate, a bulk substrate is etched using a dry etching to form a vertical active pillar which is in a single body with a semiconductor substrate.
Samsung Electronics Co., Ltd.
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Seungwoo Yong-Hoon Jong-Hyuk Jongwook Jung Ho Pil-Kyu Daelok
Choi Son Kang Lee Kim Kang Bae