Haynes and Boone, LLP
Metal-compound-removing solvent and method in lithography
A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H C H H H G H G G H H G C H G G G
H01L C11D H01L H01L H01L G03F H01L G03F G03F H01L H01L G03F C11D H01L G03F G03F G03F
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Joy Ching-Yu An-Ren
Cheng Chang Zi