Semiconductor device and method of fabricating the same
A semiconductor device includes a fin structure, an insulating structure, a protruding structure, an epitaxial structure, and a gate structure. The fin structure and the insulating structure are disposed on the substrate. The protruding structure is in direct contact with the substrate and partially protrudes from the insulating structure, and the protruding structure is the fin structure. The epitaxial structure is disposed on a top surface of the fin structure and completely covers the top surface of the fin structure. In addition, the epitaxial structure has a curved top surface. The gate structure covers the fin structure and the epitaxial structure.
UNITED MICROELECTRONICS CORP.
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Yi-Wei Yu-Hsiang Yen-Liang Ssu-I Chia-Jong Wen-Jiun Chung-Fu Man-Ling
Chen Hung Wu Fu Liu Shen Chang Lu