Jianq Chyun IP Office
Method for fabricating memory
A method for fabricating a memory is described. Word lines are provided in a first direction. Bit lines are provided in a second direction. A top electrode is formed connecting to a corresponding word line. A bottom electrode is formed connecting to a corresponding bit line. A resistive layer is formed on the bottom electrode. At least two separate L-shaped liners are formed, wherein each L-shaped liner has variable resistive materials on both ends of the L-shaped liner and each L-shaped liner is coupled between the top electrode and the resistive layer.
MACRONIX International Co., Ltd.
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Erh-Kun Kuang-Yeu Chia-Hua
Lai Hsieh Ho