Hauptman Ham, LLP
Method of manufacturing a capacitor
A method of forming a device includes forming a through via extending into a substrate. The method further includes forming a first insulating layer over the surface of the substrate. The method further includes forming a first metallization layer in the first insulating layer and electrically connected to the through via. The method further includes forming a capacitor over the first metallization layer, wherein the capacitor comprises a first capacitor dielectric layer and a second capacitor dielectric layer. The method further includes depositing a continuous second insulating layer over the first insulating layer. The capacitor is within the second insulating layer. The method further includes depositing a third insulating layer over the second insulating layer. The method further includes forming a second metallization layer in the third insulating layer. A bottom surface of the second metallization layer is below a bottom surface of the third insulating layer.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Shang-Yun Chun Hua Shin-Puu Kuang-Wei Wen-Chih Yuan-Hung Der-Chyang
Hou Chang Jeng Cheng Chiou Liu Yeh