Slater Matsil, LLP
Semiconductor device and method of forming the same
A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. A topmost location of the epitaxy structure has an n-type impurity concentration lower than an n-type impurity concentration of a location of the epitaxy structure below the topmost location.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Cheng-Chien Chi-Wen Hsin-Chieh Chia-Ming
Li Liu Huang Chang