Rabin & Berdo, P.C.
Structure of TFT electrode for preventing metal layer diffusion and manufacturing method therefor
The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.
Au Optronics Corp Chi Mei Optoelectronics Corp. Quanta Display Inc. Chunghwa Picture Tubes, Ltd. Taiwan TFT LCD Association Hannstar Display Corp Toppoly Optoelectronics Corp. Industrial Technology Research Institute
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inventional inventional additional inventional inventional
Cheng-Hsing Te-Ming Chien-Wei Shuo-Wei Yu-Chang Chai-Yuan Yu-Chi Yi-Hsun Cheng-Chung Chia-Hsiang Chi-Shen
Chen Chu Wu Liang Sun Sheu Lee Huang Chen Chen Lee