Birch, Stewart, Kolasch & Birch, LLP
Fin field effect transistor (FinFET) device structure with isolation layer and method for forming the same
A FinFET device structure is provided. The FinFET device structure includes a gate structure formed over a fin structure and an S/D contact structure formed over the fin structure. The FinFET device structure also includes an S/D conductive plug formed over the S/D contact structure, and the S/D conductive plug includes a first barrier layer and a first conductive layer. The FinFET device structure includes a gate contact structure formed over the gate structure, and the gate contact structure includes a second barrier layer and a second conductive layer. The FinFET device structure includes a first isolation layer surrounding the S/D conductive plug, and the first barrier layer is between the first isolation layer and the first conductive layer. A second isolation layer surrounding the gate contact structure, and the second barrier layer is between the second isolation layer and the second conductive layer.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chao-Hsun Chung-Huai Mei-Yun Kuo-Yi
Wang Chang Wang Chao