Townsend and Townsend and Crew LLP
Read method of memory device
A read method of a memory device including a MLC includes the steps of performing a data read operation according to a first read command; determining whether error correction of the read data is possible; if, as a result of the determination, error correction is difficult, performing a data read operation according to a second read command; determining whether error correction of read data is possible according to the second read command; and if, as a result of the determination, error correction is difficult, performing a data read operation according to a Nth (N≧3, N is an integer) read command.
Hynix Semiconductor Inc.
G G G G
G11C G11C G06F G11C
additional inventional inventional inventional
Jong Hyun Seok Jin Jun Seop
Wang Joo Chung