TraskBritt
Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials
A cap material may be formed over a photopatternable material on a semiconductor substrate. The cap material absorbs or reflects radiation and protects the photopatternable material from a first wavelength of radiation used in patterning the photoresist layer. Upon exposure to a first wavelength of radiation, the photopatternable material may be converted into a silicon dioxide-based material. The silicon dioxide-based material may be selectively removed.
Micron Technology, Inc.
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Weimin Gurtej S.
Li Sandhu