Jianq Chyun IP Office
Method for fabricating semiconductor device
Provided is a method for fabricating a semiconductor device, which includes the following steps. A substrate having a plurality of pillars is provided, wherein a plurality of trenches are formed around each pillar, and a doped region is disposed at a bottom of each pillar. An insulation layer is formed below each doped region. In addition, a gate and a gate dielectric are formed on the sidewalls of each pillar.
NANYA TECHNOLOGY CORPORATION
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Yi-Fong Chien-An Chih-Huang Yuan-Sung Chin-Piao Wen-Chieh
Lin Yu Wu Chang Chang Wang