Yuanmin Cai
Concurrently forming nFET and pFET gate dielectric layers
Embodiments include methods of forming an nFET-tuned gate dielectric and a pFET-tuned gate dielectric. Methods may include forming a high-k layer above a substrate having a pFET region and an nFET region, forming a first sacrificial layer, a pFET work-function metal layer, and a second sacrificial layer above the first high-k layer in the pFET region, and an nFET work-function metal layer above the first high-k layer in the nFET region and above the second sacrificial layer in the pFET region. The first high-k layer then may be annealed to form an nFET gate dielectric layer in the nFET region and a pFET gate dielectric layer in the pFET region. The first high-k layer may be annealed in the presence of a nitrogen source to cause atoms from the nitrogen source to diffuse into the first high-k layer in the nFET region.
International Business Machines Corporation GLOBALFOUNDRIES, Inc.
H
H01L
inventional
Maryjane Joseph F. Takashi Michael P. Siddarth A. Jinping Yanfeng Min
Brodsky Shepard, Jr. Ando Chudzik Krishnan Liu Wang Dai