Myers Bigel, P.A.
Semiconductor devices having fin-type patterns and metal contacts and methods of manufacturing the same
A semiconductor device includes a first fin-type pattern and a second fin-type pattern which protrude upwardly from an upper surface of a field insulating film and extend in a first direction. A gate structure intersects the first fin-type pattern and the second fin-type pattern. A first epitaxial layer is on the first fin-type pattern on at least one side of the gate structure, and a second epitaxial layer is on the second fin-type pattern on at least one side of the gate structure. A metal contact covers outer circumferential surfaces of the first epitaxial layer and the second epitaxial layer. The first epitaxial layer contacts the second epitaxial layer.
Samsung Electronics Co., Ltd.
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Byung-Chan Yu-Ri Jae-Hyun Ji-Su Sung-Min Dong-Ho
Ryu Lee Park Kang Kim Cha