Tutunjian & Bitetto, P.C.
Directional deposition of protection layer
A method for forming a fin device includes forming semiconductor fins over a first dielectric layer. A second dielectric layer is directionally deposited into or on the first dielectric layer and on tops of the fins on horizontal surfaces. The second dielectric layer is configured to protect the first dielectric layer in subsequent processing. Sidewalls of the fins are precleaned while the first dielectric layer is protected by the second dielectric layer. The second dielectric layer is removed to expose the first dielectric layer in a protected state.
INTERNATIONAL BUSINESS MACHINES CORPORATION
H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional
Junli Juntao Chih-Chao Hong
Wang Li Yang He