Posz & Bethards, PLC
Diaphragm-type semiconductor device and method for manufacturing diaphragm-type semiconductor device
A diaphragm-type semiconductor device includes a semiconductor substrate, a surface of which is substantially flat, a diaphragm, which covers a circular pressure reference space located on the surface, and a circular electrode layer, a middle part of which is embedded in the diaphragm. The electrode layer is larger than the space and is coaxial with the space. Therefore, internal stress is balanced between inner and outer sides of the diaphragm, and a step formed at the outer edge of the top electrode layer is separated from the diaphragm. The device also includes a step adjuster around the space on the surface. Therefore, another step formed at the outer edge of the space disappears, and a new step is formed separately from the diaphragm at the outer edge of the step adjuster. With this structure, the diaphragm has a desired flatness.
Denso Corporation
G
G01L
inventional
Seiichiro Hirofumi Yasutoshi Keiichi
Ishio Funahashi Suzuki Shimaoka