McDermott Will & Emery LLP
Stacked semiconductor transistors
At least two switching devices each including a substrate formed of a wide bandgap semiconductor, source and gate electrodes formed in a principal surface side of the substrate, and a drain electrode formed on the back surface of the substrate are stacked so that respective upper surface sides of the switching face each other.
Matsushita Electric Industrial Co., Ltd.
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H01L H01L H01L H01L H01L G09G H01L G09G H01L H01L G09G H01L H01L H01L H01L H01L H01L
additional additional additional additional additional additional additional additional additional additional additional additional additional additional additional inventional inventional
Hidekazu Masanori Hideki Makoto Nobuyoshi Kazuhiko Kazuhiro
Yamashita Ogawa Omori Kitabatake Nagagata Asada Nobori