Hauptman Ham, LLP
Ternary barristor with schottky junction graphene semiconductor
Disclosed is a graphene-based ternary barristor using a Schottky junction graphene semiconductor. A graphene channel layer is doped with N-type and N-type dopants to have two different Fermi levels and form a PN junction. Accordingly, a voltage is applied to a gate electrode layer to move the Fermi levels of the graphene channel layer and adjust the height of the Schottky barrier, thus generating current. Also, the height of the Schottky barrier is adjusted depending on the doping concentration of the graphene channel That is, the height of the Schottky barrier is changed depending on the applied gate voltage, and thus the flow of current is changed. Also, it is possible to adjust the height of the Schottky barrier by adjusting the doping concentration of the graphene channel. Accordingly, since the graphene-based ternary barristor has a high current ratio by adjusting a gate voltage, the graphene-based ternary barristor may be applied to a logic circuit.
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
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Byoung Hun Chang Hoo So Young Yun Ji
Lee Shim Kim Kim