Westerman, Hattori, Daniels & Adrian, LLP
Methods of making a ferroelectric memory device having improved interfacial characteristics
The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a ferroelectric film on a first conductive film by a sol-gel method; forming a first conductive metal oxide film on the ferroelectric film; carrying out a first annealing on the first conductive metal oxide film; forming a second conductive metal oxide film on the first conductive metal oxide film, so that the first and second conductive films serve as a second conductive film; and forming a capacitor by patterning the first conductive film, the ferroelectric film and the second conductive film. In the step of forming the first conductive metal oxide film, ferroelectric characteristics are adjusted with a flow rate ratio of oxygen by utilizing the fact that the ferroelectric characteristics of the ferroelectric film improve as the flow rate ratio of oxygen in a sputtering gas increases.
Fujitsu Semiconductor Limited
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Wensheng Yoshimasa
Wang Horii