Haynes and Boone, LLP
Structure of dielectric grid for a semiconductor device
A device includes a substrate having a non-pixel region and a pixel region; sensor elements disposed in the pixel region; and a metal layer disposed over the substrate. The metal layer includes a metal shield disposed in the non-pixel region and first trenches over the respective sensor elements in the pixel region. The device further includes a dielectric layer disposed over the metal layer. The dielectric layer has second trenches over the respective sensor elements and third trenches over the metal shield. The first trenches are completely through the metal layer, and the second trenches are partially through the dielectric layer.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
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Chi-Cherng Yin-Chieh Hsin-Chi Chun-Hao Kuo-Cheng
Jeng Huang Chen Chou Lee