Schwabe Williamson & Wyatt P.C.
Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface
A high-k gate dielectric interface with a group III-V semiconductor surface of a non-planar transistor channel region is non-directionally doped with nitrogen. In nanowire embodiments, a non-directional nitrogen doping of a high-k gate dielectric interface is performed before or concurrently with a conformal gate electrode deposition through exposure of the gate dielectric to liquid, vapor, gaseous, plasma, or solid state sources of nitrogen. In embodiments, a gate electrode metal is conformally deposited over the gate dielectric and an anneal is performed to uniformly accumulate nitrogen within the gate dielectric along the non-planar III-V semiconductor interface.
Intel Corporation
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Gilbert Robert S. Scott B. Marko Han Wui Ravi
Dewey Chau Clendenning Radosavljevic Then Pillarisetty