Haynes and Boone, LLP
Method for forming a lithography pattern
A method of lithography patterning includes forming a first material layer on a substrate, the first material layer being substantially free of silicon, and forming a patterned resist layer including at least one opening therein above the first material layer. A second material layer containing silicon is formed on the patterned resist layer and an opening is formed in the first material layer using the second material layer as a mask.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Ching-Yu Chin-Hsiang Burn Jeng
Chang Lin Lin