Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Bipolar junction transistors for on-chip electrostatic discharge protection and methods thereof
An integrated circuit device receiving signals from a signal pad that includes at least one silicon bipolar junction transistor responsive to the signals from the signal pad for providing electrostatic discharge protection, and a detection circuit for detecting the signals from the signal pad and providing a bias voltage to the at least one silicon bipolar junction transistor, wherein the at least one silicon bipolar junction transistor includes an emitter, collector and base formed in a single silicon layer and isolated from a substrate of the integrated circuit device, and wherein the base is coupled to the detection circuit to receive the bias voltage.
Industrial Technology Research Institute
Y H H
Y10S H01L H01L
additional inventional additional
Ming-Dou Hsin-Chin Chyh-Yih
Ker Jiang Chang