Metal gate structure
The metal gate structure of the present invention can include a TiN complex, and the N/Ti proportion of the TiN complex is decreased from bottom to top. In one embodiment, the TiN complex can include a single TiN layer, which has an N/Ti proportion gradually decreasing from bottom to top. In another embodiment, the TiN complex can include a plurality of TiN layers stacking together. In such a case, the lowest TiN layer has a higher N/Ti proportion than the adjusted TiN layer.
United Microelectronics Corp.
H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L
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Chih-Hao Cheng-Hsien Chin-Fu Chun-Hsien Nien-Ting
Yu Chou Lin Lin Ho