Patterson & Sheridan, L.L.P.
Method to make low resistance contact
Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.
SemiLEDs Optoelectronics Co., Ltd.
H
H01L
inventional
Chen-Fu Feng-Hsu Jiunn-Yi Wen-Huang Chao-Chen Trung Tri Hao-Chun
Chu Fan Chu Liu Cheng Doan Cheng