Cantor Colburn LLP
Integrated device with P-I-N diodes and vertical field effect transistors
An integrated device is provided. The integrated device includes a substrate having a doped upper surface section and an insulator to define first and second substrate regions on opposite sides thereof. Vertical transistors are operably arranged on the doped upper surface section at the first substrate region. P-I-N diodes are operably arranged on the doped upper surface section at the second substrate region.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Juntao Qintao Geng Kangguo
Li Zhang Wang Cheng