Duane Morris LLP
Dopant implantation method using multi-step implants
A method of forming a dopant implant region in a MOS transistor device having a dopant profile having a target dopant concentration includes implanting a first concentration of dopants into a region of a substrate, where the first concentration of dopants is less than the target dopant concentration, and without annealing the substrate after the implanting step, performing at least one second implanting step to implant at least one second concentration of dopants into the region of the substrate to bring the dopant concentration in the region to the target dopant concentration.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Tse-En Shao Hua Pu-Fang Bone-Fong Chih-Fu Chieh Chih Yen
Chang Wang Chen Wu Chang Ting Chuang