Haynes and Boone, LLP
Method for FinFET LDD doping
A method includes providing a structure having a substrate, a fin, and a gate structure; performing an implantation process to implant a dopant into the fin adjacent to the gate structure; and forming gate sidewall spacers and fin sidewall spacers. The method further includes performing a first etching process to recess the fin adjacent to the gate sidewall spacers while keeping at least a portion of the fin above the fin sidewall spacers. The method further includes performing another implantation process to implant the dopant into the fin and the fin sidewall spacers; and performing a second etching process to recess the fin adjacent to the gate sidewall spacers until a top surface of the fin is below a top surface of the fin sidewall spacers, resulting in a trench between the fin sidewall spacers. The method further includes epitaxially growing a semiconductor material in the trench.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H H H H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional inventional inventional inventional inventional additional inventional inventional inventional inventional inventional additional additional inventional inventional additional inventional inventional inventional inventional additional
Cheng-Yi Yen-Ming Kuo-Feng Wei-Yang Ya-Yun Jian-Hao Chun Hsiung Shahaji B.
Peng Chen Yu Lee Cheng Chen Tsai More