Birch, Stewart, Kolasch & Birch, LLP
Method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes
A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.
Tekcore Co., Ltd.
H H
H01L H01L
additional inventional
Sung-Li Lung-Han Chia-Wei Han-Ming Chin-Yi
Wang Peng Chang Wu Lin