Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
Multi-step epitaxial process for depositing Si/SiGe
A method for manufacturing a semiconductor device includes providing a substrate comprising silicon, cleaning the substrate, performing a first low pressure chemical vapor deposition (LPCVD) process using a first source gas to selectively deposit a seeding layer of silicon (Si) over the substrate, performing a second LPCVD process using a second source gas to selectively deposit a first layer of silicon germanium (SiGe) over the layer of Si, the second source gas including hydrochloride at a first flow rate, and performing a third LPCVD process using a third source gas including hydrochloride at a second flow rate. The first flow rate is substantially lower than the second flow rate.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Tze-Liang Li-Te S. Pang-Yen Chih-Chien
Lee Lin Tsai Chang