Memory cell and manufacturing method thereof
The present invention provides a memory cell, which includes a substrate, a gate dielectric layer, a patterned material layer, a selection gate and a control gate. The gate dielectric layer is disposed on the substrate. The patterned material layer is disposed on the substrate, wherein the patterned material layer comprises a vertical portion and a horizontal portion. The selection gate is disposed on the gate dielectric layer and atone side of the vertical portion of the patterned material layer. The control gate is disposed on the horizontal portion of the patterned material layer and at another side of the vertical portion, wherein the vertical portion protrudes over a top of the selection gate. The present invention further provides another embodiment of a memory cell and manufacturing methods thereof.
UNITED MICROELECTRONICS CORP.
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inventional inventional inventional inventional
Zhen Chih-Chien Yi-Shan Shen-De Yuan-Hsiang Wei Jianjun
Chen Chang Chiu Wang Chang Ta Yang