Camel-gate field-effect transistor with multiple modulation-doped channels
 The invention relates to the structure of the camel-gate field-effect transistor with multiple modulation-doped channels. The device structure, from the bottom to the top in succession, includes the substrate, the buffer layer, the multiple modulation-doped channels, the thin and complete depletion layer, and the ohmic contact layer. The transistor is characterized by a camel-gate diode, which is composed of the multiple modulation-doped channels, the thin and complete depletion layer and the ohmic contact layer. The gate structure may achieve the high potential height between the gate electrode and the source electrode as well as the high breakdown voltage performance. Furthermore, the use of multiple modulation-doped channels, made of n-type GaAs materials with different thickness and doped concentration, can exhibit excellent properties of high output current, large and linear transconductances. 
National Science Council of Republic of China
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H01L H01L H01L
inventional inventional inventional
Wen-Chau Wen-Shiung Jung-Hui
Liu Lour Tsai