Pillsbury Madison & Sutro LLP
Semiconductor device and method for producing the same
 A semiconductor pressure detection device includes a diaphragm formed at a portion of a P- conductivity type semiconductor substrate having a reduced thickness. Gauge resistors are formed on the surface of an N- conductivity type semiconductor layer formed on the substrate. An N+ conductivity type diffusion layer is formed in the N- conductivity type semiconductor layer to fix the electric potential of the N- conductivity type layer. The first conductivity type area surrounds the diaphragm. Therefore, when the N- conductivity type area is supplied with electric potential, the potential gradient in the N- conductivity type layer is small. Thus, the leakage current which flows to a pn junction between the gauge resistors and the N- conductivity type area is reduced. 
Denso Corporation
G
G01L
inventional
Tsuyoshi Yasutoshi Nobukazu Minekazu Toshio
Fukada Suzuki Oba Sakai Ikuta