Scully, Scott, Murphy & Presser, P.C.
Nanowire structure with selected stack removed for reduced gate resistance and method of fabricating same
Methods to fabricate a stacked nanowire field effect transistor (FET) with reduced gate resistance are provided. The nanowire stack in the stacked nanowire FET can be provided by first forming a material stack of alternating sacrificial material layers and nanowire material layer. The sacrificial material layers and selected nanowire material layers in the material stack are subsequently removed to increase a vertical distance between two active nanowire material layers.
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Hongmei Kai Junjun Xiaoping
Li Zhao Li Liang