Greer, Burns & Crain, Ltd.
Logical memory architecture, in particular for MRAM, PCRAM, or RRAM
An architecture and method are provided for reading and writing, in parallel or in series, an electronic memory component based on a two-dimensional matrix of two-terminal binary memory unit cells built into a crossbar architecture. The component includes a logical column-selector located outside the matrix and activating at least one column, one or more cells of which are subjected to read or write processing. Also provided is a component and method with the reading of the status of the cells by differential detection on from two cells of two different rows, either between a storage column and a constant reference column, or between two rows or two storage columns. A component is also provided in which specific selection structure is exclusively dedicated to read operations, and/or in which complementary cells in two complementary columns connected together are encoded in a single atomic operation by means of a single write current.
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE UNIVERSITE PARIS SUD 11
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Weisheng Claude Jacques-Olivier Sumanta
Zhao Chappert Klein Chaudhuri