Semiconductor structure with contact plug and method of fabricating the same
A semiconductor structure having a contact plug includes a substrate. A memory cell region and a peripheral circuit region are defined on the substrate. At least one memory cell is disposed on the substrate within the memory cell region. The memory cell includes a transistor and a capacitor structure. A first planar stacked dielectric layer covers the peripheral circuit region. The first planar stacked dielectric layer includes two first dielectric layers and a second dielectric layer. The first dielectric layer at the bottom of the first planar stacked dielectric layer extends to the memory cell region and covers the capacitor structure. A contact plug is disposed at the peripheral circuit region and penetrates the first planar stacked dielectric layer.
Fujian Jinhua Integrated Circuit Co., Ltd. UNITED MICROELECTRONICS CORP.
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Li-Wei Chien-Ting Ying-Chiao Kai-Ping
Feng Ho Wang Chen