Eschweiler & Associates, LLC
Wing-type projection between neighboring access transistors in memory devices
A flash memory device is disposed on a semiconductor substrate. The flash memory device includes flash memory cells arranged in rows and columns. Respective flash memory cells include respective access transistors and respective floating gate transistors. The respective access transistors have respective access gates, and the respective floating gate transistors have respective control gates arranged over respective floating gates. First and second wordlines extend substantially in parallel with one another and correspond to first and second rows which neighbor one another. The first wordline is coupled to access gates of access transistors along the first row. The second wordline is coupled to access gates of access transistors along the second row. Nearest edges of the first and second wordlines include at least one wing which extends laterally outward from a sidewall of one of the first and second wordlines towards a sidewall the other of the first and second wordlines.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H H H H H H
H01L H01L H01L H01L H01L H01L H01L
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Josh Chen-Ming Chi-Wei Po-Kai Shih-Ching Shih-Jung Chia-Ta Nai-Chao Kao-Chao
Lin Huang Ho Hsu Lee Tu Hsieh Su Lin