Harness, Dickey & Pierce, P.L.C.
Transistor with EOS protection and ESD protection circuit including the same
A transistor with an electrical overstress (EOS) protection may include an active region, a plurality of impurity regions and a conduction pattern. The active region may be formed in a substrate. The impurity regions may be formed in the active region and arranged at a predetermined or given distance with respect to each other. The conduction pattern may be arranged between each of the impurity regions in a meandering shape, and the conduction pattern may include a center portion connected to a ground terminal. Therefore, a transistor with EOS protection, a clamp device, and an ESD protection circuit including the same may increase an on-time of a clamp device and may sufficiently discharge a charge due to the EOS by including a conduction pattern configured with gates that are connected with respect to each other in a meandering shape.
Samsung Electronics Co., Ltd.
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Han-Gu Kyoung-Sik Chan-Hee Hyun-Jun
Kim Im Jeon Choi