Kilpatrick Townsend & Stockton LLP
Atomic layer etching processes
Processing methods may be performed to remove unwanted materials from a substrate. The methods may include forming a remote plasma of an inert precursor in a remote plasma region of a processing chamber. The methods may include forming a bias plasma of the inert precursor within a processing region of the processing chamber. The methods may include modifying a surface of an exposed material on a semiconductor substrate within the processing region of the processing chamber with plasma effluents of the inert precursor. The methods may include extinguishing the bias plasma while maintaining the remote plasma. The methods may include adding an etchant precursor to the remote plasma region to produce etchant plasma effluents. The methods may include flowing the etchant plasma effluents to the processing region of the processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.
Applied Materials, Inc.
H H H H H H H H H H
H01L H01L H01J H01J H01J H01J H01J H01L H01L H01L
inventional inventional additional inventional inventional additional inventional additional inventional inventional
Mang-Mang Jungmin Junghoon Tom Sean
Ling Ko Kim Choi Kang