Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and via open test areas
A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and via open test areas.
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John Marci Sherry Marcin Kelvin Timothy Jeremy Simone Christopher Indranil Kimon Tomasz Andrzej Markus Dennis Jonathan Nobuharu Conor Rakesh Larg Stephen Hans Hideki Vyacheslav Carl Sheng-Che
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