Muncy, Geissler, Olds & Lowe, P.C.
Method of manufacturing semiconductor device
The present disclosure provides a method of manufacturing a semiconductor device. The method includes steps of providing a first wafer including a first substrate and a plurality of first conductors over the first substrate; forming a first interconnect structure penetrating through the first substrate and contacting one of the first conductors; forming a bonding dielectric on the first substrate and the first interconnect structure; bonding a second wafer on the first wafer, wherein the second wafer includes a second substrate, a second ILD layer on a second front surface of the second substrate, and a plurality of second conductors in the second ILD layer, wherein the second ILD layer is in contact with the bonding dielectric; forming a second interconnect structure penetrating through the second substrate and into the second ILD layer and contacting the second conductor and the first interconnect structure.
NANYA TECHNOLOGY CORPORATION
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Hsih-Yang Yi-Jen Pei-Jhen Ching-Hung Chiang-Lin
Chiu Lo Wu Chang Shih