Gesmer Updegrove LLP
Engineering emission wavelengths in laser and light emitting devices
A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV.
Massachusetts Institute of Technology
B H H H H
B82Y H01L H01S H01S H01L
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Lionel C. Jurgen Jifeng
Kimerling Michel Liu