Harness, Dickey & Pierce, P.L.C.
Lateral type photodiode, image sensor including the same, and method of manufacturing the photodiode and the image sensor
Example embodiments relate to a lateral type photodiode including a substrate, an insulation mask layer formed on the substrate, and a first type semiconductor layer, an active layer, and a second type semiconductor layer that contact a surface of the insulation mask layer and that are sequentially disposed in a direction substantially parallel to the surface of the insulation mask layer. The insulation mask layer includes a through hole, and the first type semiconductor layer, the active layer, and the second type semiconductor layer are sequentially formed from the through hole by using a lateral overgrowth method.
Samsung Electronics Co., Ltd.
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Jungwoo Yongwoo Myounghoon Jihoon Seunghyup Seungeon Hyuksoon Haeseok
Kim Jeon Jung Ahn Lee Ahn Choi Park