Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Vapor phase epitaxy apparatus and irregular gas mixture avoidance method for use therewith
A vapor phase epitaxy apparatus having a processing chamber with a target workpiece such as a wafer being received therein is disclosed. This apparatus includes a first flow path which supplies the chamber with a gas needed for vapor phase epitaxial film formation on the wafer, and a valve unit for controlling the gas flow in the first flow path. The apparatus also includes a second flow path for supplying into the chamber a cleaner gas for cleaning of the interior of the chamber, and a third flow path for exhaust of residual gases within the chamber. The valve unit has a series combination of two-stage valves with a pressure switch being provided therebetween. An irregular gas mixture avoiding method for use with the apparatus is also disclosed.
NuFlare Technology, Inc.
C Y C C
C30B Y10T C30B C30B
inventional additional inventional inventional
Kunihiko Hideki
Suzuki Ito