Myers Bigel Sibley & Sajovec
Schottky diodes including polysilicon having low barrier heights and methods of fabricating the same
Hybrid semiconductor devices including a PIN diode portion and a Schottky diode portion are provided. The PIN diode portion is provided on a semiconductor substrate and has an anode contact on a first surface of the semiconductor substrate. The Schottky diode portion is also provided on the semiconductor substrate and includes a polysilicon layer on the semiconductor substrate and a ohmic contact on the polysilicon layer. Related Schottky diodes are also provided herein.
Cree, Inc.
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inventional inventional additional additional inventional inventional
Saptharishi Qingchun
Sriram Zhang