Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one chamfer short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and chamfer short test areas
A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one chamfer short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and chamfer short test areas.
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John Kimon Christopher Hans Stephen Carl Jonathan Dennis Marcin Conor Markus Tomasz Jeremy Vyacheslav Kelvin Andrzej Marci Larg Sheng-Che Simone Rakesh Hideki Nobuharu Timothy Indranil Sherry
Kibarian Michaels Hess Eisenmann Lam Taylor Haigh Ciplickas Strojwas O'Sullivan Rauscher Brozek Cheng Rovner Doong Strojwas Liao Weiland Lin Comensoli Vallishayee Matsuhashi Yokoyama Fiscus De Lee