WPAT, P.C.
Semiconductor structure and method for forming the same
A semiconductor structure and a method for forming the same are provided. The method includes following steps. A gate electrode layer is formed on a substrate. A spacer structure is formed on a sidewall of the gate electrode layer. A dielectric cap film is formed to cover the gate electrode layer and the spacer structure. A source/drain implantation is performed to the substrate with the dielectric cap film exposed to a condition of the source/drain implantation.
UNITED MICROELECTRONICS CORP.
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Yu-Hsiang Wei-Chih Tung-Ming Jun-Chi Chih-Sheng Chih-Jen Chung-Hsien
Lin Chen Chen Huang Chang Lin Tsai