Mills & Onello LLP
Methods of fabricating a semiconductor device using a selective epitaxial growth technique
Methods of fabricating a semiconductor device using a selective epitaxial growth technique include forming a recess in a semiconductor substrate. The substrate having the recess is loaded into a reaction chamber. A semiconductor source gas and a main etching gas are injected into the reaction chamber to selectively grow an epitaxial semiconductor layer on a sidewall and on a bottom surface of the recess. A selective etching gas is injected into the reaction chamber to selectively etch a fence of the epitaxial semiconductor layer which is adjacent to the sidewall of the recess and grown to a level that is higher than an upper surface of the semiconductor substrate.
Samsung Electronics Co., Ltd.
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Seung-Hwan Hwa-Sung Ho Tetsuji Dong-Suk
Lee Rhee Lee Ueno Shin