Lowe, Price, LeBlanc & Becker
Method of manufacturing field effect transistor
 When exposure light reaches a silicon oxide film, this light is multiply reflected in the silicon oxide film to spread or narrow a photoresist layer. A tungsten silicide film prevents the exposure light from reaching the silicon oxide film. This silicon oxide film is employed as a mask to selectively remove a polycrystalline silicon film and a tungsten silicide film by etching for forming a gate electrode, while the tungsten silicide film is simultaneously removed by this etching. 
Mitsubishi Denki Kabushiki Kaisha
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Shinya Takayuki Eiichi
Watanabe Saito Ishikawa