Slater Matsil, LLP
Resistance variable memory structure and method of forming the same
A semiconductor structure includes a memory region. A memory structure is disposed on the memory region. The memory structure includes a first electrode, a resistance variable layer, protection spacers and a second electrode. The first electrode has a top surface and a first outer sidewall surface on the memory region. The resistance variable layer has a first portion and a second portion. The first portion is disposed over the top surface of the first electrode and the second portion extends upwardly from the first portion. The protection spacers are disposed over a portion of the top surface of the first electrode and surround the second portion of the resistance variable layer. The protection spacers are configurable to protect at least one conductive path in the resistance variable layer. The protection spacers have a second outer sidewall surface substantially aligned with the first outer sidewall surface of the first electrode.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H G H H H G G
H01L H01L G11C H01L H01L H01L G11C G11C
inventional inventional inventional inventional inventional inventional additional additional
Chih-Yang Wen-Chun Wen-Ting Sheng-Hung Kuo-Chi Chin-Chieh Yu-Wen Hsia-Wei
Chang You Chu Shih Tu Yang Liao Chen