Maschoff Brennan
Memory device and fabrication method thereof
A method for forming an integrated circuit is provided. The method includes forming a dielectric layer over a cell region and a logic region of a substrate; forming a resistance switching layer over the dielectric layer; performing at least one etch process to pattern the resistance switching layer into a plurality of resistance switching elements in the cell region, in which a first portion of the dielectric layer in the logic region is less etched by the etch process than a second portion of the dielectric layer in the cell region.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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inventional inventional inventional additional additional
Han-Ting Tai-Yen Sin-Yi Yu-Shu Chien-Chung Chih-Yuan Hui-Hsien Chen-Jung Jyu-Horng
Lin Peng Yang Chen Huang Ting Wei Wang Shieh