McDermott Will & Emery LLP
Nitride-based semiconductor light-emitting device
A nitride-based semiconductor light-emitting device includes an n-type nitride-based semiconductor layer, an active layer, a p-type nitride-based semiconductor layer, an ohmic contact layer covering a portion of the p-type nitride-based semiconductor layer upper surface, and a p electrode including a first portion contacting the p-type nitride-based semiconductor layer and a second portion contacting the ohmic contact layer.
SAMSUNG ELECTRONICS CO., LTD.
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additional inventional inventional
Kyung-wook Cheol-soo Jung-sub Jin-sub
Hwang Sone Kim Lee