Dority & Manning, P.A.
Methods for processing a workpiece using fluorine radicals
Methods for processing a workpiece with fluorine radicals are provided. In one example implementation, the method includes a workpiece having at least one silicon layer and at least one silicon germanium layer. The method can include placing the workpiece on a workpiece support in a processing chamber. The method can include generating one or more species from a process gas in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can include exposing the workpiece to the filtered mixture to remove at least a portion of the at least one silicon layer.
Beijing E-Town Semiconductor Technology Co., Ltd. Mattson Technology, Inc.
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H01J H01L H01L G03F
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Xinliang Qi
Lu Zhang