Haynes Boone LLP
Cross-talk reduction through deep pixel well implant for image sensors
An image sensor device includes a semiconductor substrate having a first type of conductivity, a semiconductor layer having the first type of conductivity formed on the semiconductor substrate, and pixels formed in the semiconductor layer. The semiconductor layer includes a first deep well having the first type of conductivity and substantially underlying the plurality of pixels, and a second deep well having a second type of conductivity different from the first type of conductivity and substantially underlying the first deep well.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H
H01L H01L
inventional inventional
Chung-Wei Chun-Yao Han-Chi Shou-Gwo Tong-Chern
Chang Ko Liu Wuu Ong