Foley & Lardner
Process for fabricating an integrated circuit with a self-aligned contact
 A method of forming a contact in a flash memory device utilizes a local interconnect process technique. The local interconnect process technique allows the contact to butt against or overlap a stacked gate associated with the memory cell. The contact can include tungsten. The stacked gate is covered by a barrier layer which also covers the insulative spacers. 
Fujitsu Limited Advanced Micro Devices, Inc. Fujitsu AMD Semiconductor Limited
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inventional inventional
Chi Mark Unsoon Fei Hung-Sheng Yu Mark Tatsuya Angela Mark
Chang Chang Kim Wang Chen Sun Ramsbey Kajita Hui Randolph