Marks & Clerk
Anhydrous HF release of process for MEMS devices
A method of etching a sacrificial oxide layer covering an etch-stop silicon nitride underlayer, involves exposing the sacrificial oxide to anhydrous HF at a temperature of less than about 100° C. and/or at vacuum level lower than 40 Torr; and subsequently performing an in-situ vacuum evaporation of etch by-products at a temperature of more than about 100° C. and at vacuum level lower than the 40 Torr without exposure to ambient air.
DALSA Semiconductor Inc.
B B H B
B81C B81C H01L B81C
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Jun Ghislain Luc
Li Migneault Ouellet