Thomas, Kayden, Horstemeyer & Risley
Magnetic random access memory, manufacturing method and programming method thereof
A magnetic random access memory (MRAM) and a manufacturing method and a programming method thereof are provided. The magnetic random access memory comprises a first magnetic tunnel junction structure and a second magnetic tunnel junction structure. The second magnetic tunnel junction structure is electrically connected with the first magnetic tunnel junction structure, and the volume of the second magnetic tunnel junction structure is smaller than that of the first magnetic tunnel junction structure.
Macronix International Co., Ltd.
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Kuang-Yeu Chia-Hua
Hsieh Ho