Slater Matsil, LLP
Method for operating RRAM memory
Methods for operating memory are disclosed. A method includes applying a select word line voltage to a word line node of a first resistive random access memory (RRAM) cell; applying a first programming voltage to a source line node of the first RRAM cell; and setting the first RRAM cell comprising applying a second programming voltage to a bit line node of the first RRAM cell. The first programming voltage is greater than zero volts, and the second programming voltage is greater than the first programming voltage. Other disclosed methods include concurrently setting and resetting RRAM cells.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chia-Fu Chih-Yang Wen-Ting
Lee Chang Chu