Oliff & Berridge
Interconnection structure for semiconductor integrated circuit and manufacture of the same
 An interconnection structure for semiconductor integrated circuits and the method for manufacturing of the same are provided. The interconnection structure has a low electric resistance and a good electromigration resistance and can prevent the atoms in wire materials from diffusing into insulating films or substrates. More particularly, an insulating film 12 is formed on a silicon substrate 10, on which a tungsten 14 is formed. The tungsten film 14 is subjected to plasma irradiation on the surface thereof to form an amorphous W--N film 16. A copper wire pattern 20 is formed on the amorphous W--N film 16. 
Kawasaki Steel Corporation
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additional inventional inventional
Tadashi Hideaki
Nakano Ono