Gibb I.P. Law Firm, LLC
In situ doped embedded sige extension and source/drain for enhanced PFET performance
Disclosed is an integrated circuit structure and a method of making such a structure that has a substrate and P-type and N-type transistors on the substrate. The N-type transistor extension and source/drain regions comprise dopants implanted into the substrate. The P-type transistor extension and source/drain regions partially include a strained epitaxial silicon germanium, wherein the strained silicon germanium comprises of two layers, with a top layer that is closer to the gate stack than the bottom layer. The strained silicon germanium is in-situ doped and creates longitudinal stress on the channel region.
International Business Machines Corporation
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H01L H01L H01L H01L
inventional inventional inventional inventional
Dureseti Henry K. Huajie Sang-Hyun Siddhartha Werner A.
Chidambarrao Utomo Chen Oh Panda Rausch