Muir Patent Law, PLLC
Test pattern of semiconductor device
A test pattern of a semiconductor device is provided, which includes first and second fins formed to project from a substrate and arranged to be spaced apart from each other, first and second gate structures formed to cross the first and second fins, respectively, a first source region and a first drain region arranged on the first fin on one side and the other side of the first gate structure, a second source region and a second drain region arranged on the second fin on one side and the other side of the second gate structure, a first conductive pattern connected to the first and second drain regions to apply a first voltage to the first and second drain regions and a second conductive pattern connecting the first source region and the second gate structure to each other.
SAMSUNG ELECTRONICS CO., LTD.
H H
H01L H01L
inventional additional
Jun-Suk Dae-Lim Sang-Hyun Wei-Hua Hwa-Sung Min-Ho
Choi Kang Woo Hsu Rhee Kwon