Slater & Matsil, L.L.P.
MOS transistors with selectively strained channels
The channels of first and second CMOS transistors can be selectively stressed. A gate structure of the first transistor includes a stressor that produces stress in the channel of the first transistor. A gate structure of the second transistor is disposed in contact with a layer of material that produces stress in the channel of the second transistor.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chung-Hu Hung-Wei Chih-Hsin Wen-Chin
Ke Chen Ko Lee