Haynes and Boone, LLP
Methods of forming source/drain contacts in field-effect transistors
A method includes forming a first dummy source/drain (S/D) contact over a first epitaxial S/D feature and a second dummy S/D contact over a second epitaxial S/D feature, where first and the second dummy S/D contacts may be formed in an interlayer dielectric (ILD) layer; removing a portion of the first dummy S/D contact, a portion of the second dummy S/D contact, and a portion of the ILD layer disposed between the first and the second dummy S/D contacts to form a first trench; removing a remaining portion of the first dummy S/D contact to form a second trench; and forming a metal S/D contact in the first and the second trenches. The first and the second dummy S/D contacts include a dielectric material different from a dielectric material of the ILD layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chih-Hao Sheng-Tsung Chia-Hao Yu-Ming
Wang Wang Chang Lin