Maschoff Brennan
Semiconductor device, integrated circuit structure using the same, and manufacturing method thereof
A semiconductor device includes a substrate, a semiconductor structure, a metal pad, and a stress releasing material. The semiconductor structure is disposed on the substrate. The metal pad is disposed on the semiconductor structure. The metal pad includes a through hole therein. The stress releasing material is disposed in the through hole.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional additional additional additional additional additional additional additional additional additional additional additional additional additional additional additional inventional additional additional additional additional additional additional additional additional inventional additional additional additional additional additional additional additional additional additional additional additional additional additional additional additional additional additional
Tin-Hao Chen-Shien Yen-Liang Sheng-Yu Yu-Feng
Kuo Chen Lin Wu Chen