Mattingly & Malur, P.C.
Method of forming a CMOS structure having gate insulation films of different thicknesses
The semiconductor integrated circuit device employs on the same silicon substrate a plurality of kinds of MOS transistors with different magnitudes of tunnel current flowing either between the source and gate or between the drain and gate thereof. These MOS transistors include tunnel-current increased MOS transistors at least one of which is for use in constituting a main circuit of the device. The plurality of kinds of MOS transistors also include tunnel-current reduced or depleted MOS transistors at least one of which is for use with a control circuit. This control circuit is inserted between the main circuit and at least one of the two power supply units.
Renesas Technology Corp.
Y H H H H H Y B H H H
Y10S H01L H01L H01L H01L H01L Y10S B82Y H01L H01L H01L
additional inventional inventional inventional inventional additional additional additional inventional inventional inventional
Nozomu Masashi Hiroyuki
Matsuzaki Horiguchi Mizuno