Myers Bigel Sibley & Sajovec
Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parameters
A layer is formed by chemical vapor depositing a seeding layer of ruthenium oxide on a substrate at a chemical vapor deposition flow rate ratio of a ruthenium source to oxygen gas. A main layer of ruthenium is chemical vapor deposited on the seeding layer by increasing the chemical vapor deposition flow rate ratio of the ruthenium source to the oxygen gas.
Samsung Electronics Co., Ltd.
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Sung-tae Seok-jun Yun-jung Soon-yeon Cha-young Young-wook
Kim Won Lee Park Yoo Park