Ingrassia Fisher & Lorenz, P.C.
Integrated circuits including FINFET devices with shallow trench isolation that includes a thermal oxide layer and methods for making the same
Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes etching an enhanced high-aspect-ratio process (eHARP) oxide fill that is disposed in an STI trench between two adjacent fins to form a recessed eHARP oxide fill. The two adjacent fins extend from a bulk semiconductor substrate. A silicon layer is formed overlying the recessed eHARP oxide fill. The silicon layer is converted to a thermal oxide layer to further fill the STI trench with oxide material.
GLOBALFOUNDRIES, INC.
H H H H H H
H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional
Jin Ping Huang Seung Wei Hua HongLiang
Liu Liu Kim Tong Shen