Method of manufacturing a semiconductor device with a strained channel
A method of manufacturing a semiconductor device provides a semiconductor substrate with a gate and a number of source/drain regions on the semiconductor substrate. A layer containing a strain-inducing element is provided over the number of source/drain regions. The strain-inducing element is driven from the layer containing a strain-inducing element into the number of source/drain regions. A number of source/drains is formed in the number of source/drain regions.
Chartered Semiconductor Manufacturing Ltd.
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Wee Hong King Jien Kheng Chok Jinping Yee Chia Ganesh Lydia
Phua Chui Tee Liu Yeo Samudra Wong