Duane Morris LLP
Semiconductor device with asymmetric pocket implants
A semiconductor device (1) has a source (2) a gate (3) and a drain (4), a single deep-pocket ion implant (8) in a source-drain depletion region, and a single shallow-pocket ion implant (9) in the source-drain depletion region.
Taiwan Semiconductor Manufacturing Co., Ltd.
H H H H H H H H
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Yin-Pin Chin-Sheng
Wang Chang