Greer, Burns & Crain, Ltd.
Ferromagnetic tunnel-junction magnetic sensor utilizing a barrier layer having a metal layer carrying an oxide film
 A ferromagnetic tunnel-junction magnetic sensor includes a first ferromagnetic layer, an insulation barrier layer formed on the first ferromagnetic layer and including therein a tunnel oxide film, and a second ferromagnetic layer formed on the insulation barrier layer, wherein the insulation barrier layer includes a metal layer carrying the tunnel oxide film thereon such that the tunnel oxide film is formed of an oxide of a metal element constituting the metal layer, and wherein the insulation barrier layer has a thickness of about 1.7 nm or less but larger than 1 molecular layer in terms of the oxide forming the tunnel oxide film. 
Fujitsu Limited
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Kazuo Masashige Hideyuki
Kobayashi Sato Kikuchi