Device comprising n-channel semiconductor material
The invention provides a device comprising an improved n-channel semiconducting film, the film formed from a fused-ring tetracarboxylic diimide compound which exhibits a field effect electron mobility greater than 0.001 cm2/Vs, advantageously greater than 0.03 cm2/Vs, in film form. Contemplated compounds include naphthalene 1,4,5,8, tetracarboxylic acid diimides, naphthalene 2,3,6,7 tetracarboxylic acid diimides, anthracene 2,3,6,7-tetracarboxylic acid diimides, and heterocyclic variants thereof. The n-channel compounds are capable of being significantly soluble in common organic solvents, allowing for solution deposition of active semiconductor films, and are also capable of possessing significant volatility, such that vapor phase deposition, where desired, is relatively facile. It is also possible for the compounds to display the desirably high n-channel mobilities and on/off ratios even when operated in air.
Agere Systems Guardian Corp.
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Andrew J Wenjie Howard Edan
Lovinger Li Katz