DRAM with schottky barrier FET and MIM trench capacitor
A semiconductor circuit and method of fabrication is disclosed. In one embodiment, the semiconductor circuit comprises a metal-insulator-metal trench capacitor in a silicon substrate. A field effect transistor is disposed on the silicon substrate adjacent to the metal-insulator-metal trench capacitor, and a silicide region is disposed between the field effect transistor and the metal-insulator-metal trench capacitor. Electrical connectivity between the transistor and capacitor is achieved without the need for a buried strap.
International Business Machines Corporation
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Pradeep Jin Herbert Lei Puneet
Jana Liu Ho Goyal