Semiconductor device with integrated memory devices and MOS devices and process of making the same
A method of integrating memory and metal-oxide-semiconductor (MOS) processes is provided, including steps of forming an oxide layer and a nitride layer on a substrate, forming a field oxide in a first area by an oxidation process with the nitride layer as a mask, wherein the oxidation process simultaneously forms a top oxide layer on the nitride layer, removing the top oxide layer, the nitride layer and the oxide layer in the first area, forming a polysilicon layer on the substrate, and patterning the polysilicon layer into MOS units in the first area and memory units in a second area.
UNITED MICROELECTRONICS CORP.
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Shen-De Weichang Chia-Ching Wang
Wang Liu Hsu Xiang