Harness, Dickey & Pierce, P.L.C.
Phase change memory devices having a current increase unit
A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom stack and a top stack disposed on the phase change layer. The phase change layer includes a unit for increasing a path of current flowing through the phase change layer and reducing a volume of a phase change memory region. The area of a surface of the unit disposed opposite to the bottom stack is greater than or equal to the area of a surface of the bottom stack in contact with the phase change layer.
Samsung Electronics Co., Ltd.
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Yoon-ho Jai-kwang Hyo-sug Jae-joon Hyuk-soon Ji-hyun
Kang Shin Lee Oh Choi Hur