Armstrong, Nikaido, Marmelstein, Kubovcik & Murray
Semiconductor memory device using resonant-tunneling transistor
 A semiconductor memory device comprises a transistor having such a current characteristic that a base current has a differential negative resistance characteristic and a collector current greatly flows after the differential negative resistance characteristic occurs in the base current when a base-emitter voltage is increased, a load coupled in series between a collector and a base of the transistor, first and second input terminals coupled to the base of the transistor through a base resistance of the transistor, and an ouptut terminal coupled to the collector of the transistor. 
Fujitsu Limited
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G11C G11C B82Y
inventional additional inventional
Toshihiko Toshiro
Mori Futatsugi