Harness, Dickey & Pierce, P.L.C.
Multi bit flash memory device and method of programming the same
A method of programming a flash memory device may include dividing a plurality of memory cells into a plurality of groups according to a threshold voltage state, the memory cells configured to store multi bit data. The plurality of memory cells may be programmed with a program data. The memory cells of the divided groups may be respectively selected and programmed by divided group during the programming of the plurality of memory cells.
Samsung Electronics Co., Ltd.
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inventional additional inventional inventional
Seung-Jae
Lee