Slater & Matsil, L.L.P.
Shallow trench isolation with improved structure and method of forming
A shallow trench isolation (STI) structure and methods of forming a STI structure are disclosed. An embodiment is a method for forming a semiconductor structure. The method includes forming a recess in a semiconductor substrate; forming a first material on sidewalls of the recess; forming a widened recessed portion through a bottom surface of the recess; removing the first material from the sidewalls of the recess; and forming a dielectric material in the recess and the widened recessed portion. The bottom surface of the recess is exposed through the first material, and the bottom surface of the recess has a first width. The widened recessed portion has a second width. The second width is greater than the first width.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H
H01L H01L
inventional inventional
Chao-Cheng Chia-Wei Jhon-Jhy
Chen Chang Liaw