Baker Botts L.L.P.
Method for minimizing defects in a semiconductor substrate due to ion implantation
The effects of knock-on oxide in a semiconductor substrate are reduced by providing a semiconductor substrate and forming a thin layer of native oxide on the semiconductor substrate. Ion implantation is performed through the native oxide layer. The native oxide layer reduces the phenomenon of knock-on oxide and oxygen concentration within the semiconductor substrate. Further reduction may be achieved by etching the surface of the semiconductor substrate in order to eliminate a concentration of oxygen at a surface of the semiconductor substrate.
SuVolta, Inc.
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inventional inventional inventional
Pushkar Ken-ichi Toshifumi Toshiki
Ranade Okabe Mori Miyake