Lerner, David, Littenberg, Krumholz & Mentlik, LLP
Silicon-based molten composition and method for manufacturing silicon carbide single crystal using the same
A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al). SiaCrbVcAld  [Formula 1] In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1. 
LG Chem, Ltd.
C C H C H C
C30B C30B H01L C30B H01L C30B
inventional inventional additional inventional additional inventional
Chan Yeup Jung Min Junghwan Ho Rim Manshik
Chung Ko Kim Lee Park