Simplified method for cleaning silicon wafers after application of laser marks
A simplified cleaning method for the removal of particulates and adherent residues resulting from the incorporation of laser identification marks onto silicon wafers is described. The cleaning method consists of first immersing the wafers in a heated ammoniacal/hydrogen peroxide RCA-SC-1 cleaning solution in the presence of megasonic agitation. This is followed by a immersion rinse in de-ionized water heated to at least 50&deg; C. Finally the wafers are subjected to at least three quick-dump rinses in room temperature de-ionized water and dried. It is found that the hot de-ionized water rinse provides adequate removal of chemical residues remaining after the particle dislodging action of the megasonically agitated RCA SC-1 solution to eliminate the need for application of the acidic/hydrogen peroxide RCA SC-2 treatment.
Taiwan Semiconductor Manufacturing Company
H B Y
H01L B08B Y10S
inventional inventional additional
Jung-Hui Chun Chieh Kuo-Fong
Kao Chang Chen