IP & T Group LLP
Semiconductor device with buried gates and method for fabricating the same
A semiconductor device includes a supplementary layer and a silicon layer stacked over a substrate, a trench penetrating the supplementary layer and the silicon layer and formed over the substrate, a gate insulation layer formed along a surface of the trench, and a buried gate formed over the gate insulation layer and filling a portion of the trench.
Hynix Semiconductor Inc.
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Seung-Ryong Tae-Hang
Lee Ahn