Slater & Matsil, L.L.P.
Static noise-immune SRAM cells
A static random access memory (SRAM) cell includes a first load device, a first pull-down transistor, and a switch-box coupled between the first load device and the first pull-down transistor. The switch-box is configured to receive a switch control signal to turn off a first connection between the first load device and the first pull-down transistor during read operations of the SRAM cell and to turn on the first connection during write operations.
Taiwan Semiconductor Manufacturing Company, Ltd.
G
G11C
inventional
Fang-Shi Jordan Tsung-Lin Chang-Yun Wesley Ping-Wei Sheng Chi Chia-Fu Tang-Xuan
Lai Lee Chang Lin Wang Lin Lee Zhong