Hauptman Ham, LLP
Metal gate transistor, integrated circuits, systems, and fabrication methods thereof
A method of forming an integrated circuit structure includes providing a gate strip in an inter-layer dielectric (ILD) layer. The gate strip comprises a metal gate electrode over a high-k gate dielectric. An electrical transmission structure is formed over the gate strip and a conductive strip is formed over the electrical transmission structure. The conductive strip has a width greater than a width of the gate strip. A contact plug is formed above the conductive strip and surrounded by an additional ILD layer.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Chih-Ping Alex Jye-Yen Hua-Chou Chia-Yi Harry-Hak-Lay Chun-Hung Chien-Chih
Chao Kalnitsky Cheng Tseng Su Chuang Chen Ho