Lowe Hauptman & Ham, LLP
Through-silicon vias for semicondcutor substrate and method of manufacture
A semiconductor component includes a semiconductor substrate having a top surface. An opening extends from the top surface into the semiconductor substrate. The opening includes an interior surface. A first dielectric liner having a first compressive stress is disposed on the interior surface of the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner. A metal barrier layer is disposed on the third dielectric liner. A conductive material is disposed on the metal barrier layer and fills the opening.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Hsiang-Yi Ebin Chia-Lin Cheng-Hung Tsang-Jiuh Darryl Wen-Chih Chun Hua Li-Hsien Chen-Hua
Wang Liao Yu Chang Wu Kuo Chiou Chang Huang Yu