Haynes and Boone, LLP
VIA structure and methods of forming the same
A method includes providing a substrate having a conductive column, a dielectric layer over the conductive column, and a plurality of sacrificial blocks over the dielectric layer, the plurality of sacrificial blocks surrounding the conductive column from a top view; depositing a sacrificial layer covering the plurality of sacrificial blocks, the sacrificial layer having a dip directly above the conductive column; depositing a hard mask layer over the sacrificial layer; removing a portion of the hard mask layer from a bottom of the dip; etching the bottom of the dip using the hard mask layer as an etching mask, thereby exposing a top surface of the conductive column; and forming a conductive material inside the dip, the conductive material being in physical contact with the top surface of the conductive column.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Wei-Chieh Feng-Jia Chern-Yow Jieh-Jang
Huang Shiu Hsu Chen