Radiation-hard, low power, sub-micron CMOS on a SOI substrate
 A radiation-hard, low-power semiconductor device of the complementary metal-oxide semiconductor (CMOS) type which is fabricated with a sub-micron feature size on a silicon-on-insulator (SOI) substrate (12). The SOI substrate may be of several different types. The sub-micron CMOS SOI device has both a fabrication and structural complexity favorably comparable to conventional CMOS devices which are not radiation-hard. A method for fabricating the device is disclosed. 
Raytheon Company
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H01L H01L Y10S
inventional inventional additional
Chen-Chi P. James S. Truc Q. Mei F.
Chang Cable Vu Li