Ryan, Mason & Lewis, LLP
Three-dimensional (3D) tunneling field-effect transistor (FET)
A method for manufacturing a transistor device includes forming a plurality of fins on a substrate, performing an annealing process to cause the fins to have a round shape, growing an epitaxial semiconductor layer on a surface of each fin, wherein the epitaxial semiconductor layer is formed along the round shape, and forming a gate structure on the substrate, wherein the gate structure is formed on the epitaxial semiconductor layer on the surface of each fin.
International Business Machines Corporation
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Kangguo Juntao Peng Heng
Cheng Li Xu Wu