Sughrue Mion, PLLC
Power semiconductor device
According to a power semiconductor device of the present invention, it comprises a plurality of lead frames formed into like a wiring pattern, a power semiconductor element joined onto the lead frame, and a capacitor placed between mutually adjacent two lead frames, and is encapsulated with a mold resin. The capacitor is characterized in that external electrodes of that capacitor are connected to the lead frames each through a stress-relaxation structure portion that is lower in rigidity than the capacitor.
Mitsubishi Electric Corporation
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Masahiko Dai Masaki Tatsuya
Fujita Nakajima Kato Fukase