Harness, Dickey & Pierce, P.L.C.
High electron mobility transistor and method of manufacturing the same
According to example embodiments, a high electron mobility transistor (HEMT) includes: stack including a buffer layer, a channel layer containing a two dimensional electron gas (2DEG) channel, and a channel supply layer sequentially stacked on each other, the stack defining a first hole and a second hole that are spaced apart from each other. A first electrode, a second electrode, and third electrode are spaced apart from each other along a first surface of the channel supply layer. A first pad is on the buffer layer and extends through the first hole of the stack to the first electrode. A second pad is on the buffer layer and extends through the second hole of the stack to the second electrode. A third pad is under the stack and electrically connected to the third electrode.
Samsung Electronics Co., Ltd.
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Jai-kwang Jae-joon Jong-bong Hyuk-soon Jong-seob In-jun
Shin Oh Ha Choi Kim Hwang