WPAT, P.C., Intellectual Property Attorneys
Semiconductor structure and method for manufacturing the same
A method for manufacturing a semiconductor includes following steps. An epitaxial structure including a first semiconductor material and a second semiconductor material is provided. A lattice constant of the second semiconductor material is greater than a lattice constant of the first semiconductor material. A metal-containing layer is deposited on the epitaxial structure. The metal containing layer includes a first metal material and a second metal material. An atomic size of the second metal material is greater than an atomic size of the first metal material. The metal-containing layer and the epitaxial structure are annealed to form a metal silicide layer on the epitaxial structure. The metal silicide layer includes the first semiconductor material, the second semiconductor material, the first metal material, and the second metal material.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
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Yan-Ming Wei-Yip Chih-Wei Yu-Ming Hung-Hsu
Tsai Loh Chang Huang Chen