Kenyon & Kenyon
Apparatus for plasma treatment using electron cyclotron resonance
 A plasma treatment apparatus for forming a thin film on a substrate in a vacuum vessel includes a magnetic field generator which can be positioned inside or outside the vacuum vessel, and a microwave source. The magnetic field strength is controllable such that an electron cyclotron resonance (ECR) area is defined near the substrate. The magnetic field generator can be arranged so that plasma and reactive gas introduction ports are on the microwave introduction side of the ECR area and the substrate is on the opposite side of the ECR area. Alternatively, a gas introduction port can be positioned such that reactive gas is introduced into the ECR area or onto the substrate. 
Hitachi, Ltd. Hitachi Service Engineering Co., Ltd.
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H01J H05H C23C H01J
inventional inventional inventional inventional
Kazuo Noboru Tadasi Naohiro Kiyoshi Takuya Yasuhiro Shigeru
Suzuki Suzuki Sonobe Momma Chiba Fukuda Mochizuki Takahashi