Tung & Associates
Method for avoiding unetched polymer residue in anisotropically etched semiconductor features
A method for plasma treating an anisotropically etched semiconductor feature with improved removal of residual polymeric material including providing a semiconductor wafer having an anisotropically etched feature opening further including an edge portion defining a diameter of the anisotropically etched feature opening the anisotropically etched feature opening further comprising polymeric material disposed within the anisotropically etched feature opening; plasma treating the at least one opening with an oxygen containing plasma to substantially remove the polymeric material including removing a portion of the edge portion.
Taiwan Semiconductor Manufacturing Co. Ltd
H H H H B H
H01L H01L H01L H01L B08B H01L
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Yu-Chun Chih-Fu
Huang Chang