Akin Gump Strauss Hauer & Feld, LLP
Non-volatile flash memory
A method of operating a non-volatile memory cell, wherein the non-volatile memory cell includes a word line, a first bit line, and a second bit line, the method includes programming the memory cell that includes applying a high positive bias to the first bit line, applying a ground bias to the second bit line, and applying a high negative bias to the word line, wherein positively-charged holes tunnel through the dielectric layer into the trapping layer.
Macronix International Co., Ltd.
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inventional inventional inventional
Hung-Yueh Wen-Jer Tao-Cheng Chih-Chieh
Chen Tsai Lu Yeh