Sughrue Mion, PLLC
Magnetic memory device and method of fabricating the same
A magnetic memory device and a method of fabricating the same are provided. The method includes forming a first magnetic layer on a substrate, forming a tunnel barrier layer on the first magnetic layer, and forming a second magnetic layer on the tunnel barrier layer. The forming of the tunnel barrier layer includes forming a first metal oxide layer on the first magnetic layer, forming a first metal layer on the first metal oxide layer, forming a second metal oxide layer on the first metal layer, and performing a first thermal treatment process to oxidize at least a portion of the first metal layer.
SAMSUNG ELECTRONICS CO., LTD.
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Sechung Ki Woong Yong Sung Juhyun Woo Chang Joonmyoung
Oh Kim Park Kim Lim Lee