Magnetic memory device having shared source line and bit line
A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.
UNITED MICROELECTRONICS CORP.
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Jian-Jhong Bo-Chang Yi-Ting Jen-Yu Yan-Jou Yung-Ching Po-Chun Cheng-Tung
Chen Li Wu Wang Chen Hsieh Yang Huang