Haynes Beffel & Wolfeld LLP
Manufacturing method for phase change RAM with electrode layer process
A method for manufacturing a phase change memory device comprises forming an electrode layer. Electrodes are made in the electrode layer using conductor fill techniques that are also used inter-layer conductors for metallization layers, in order to improve process scaling with shrinking critical dimensions for metallization layers. The electrode layer is made by forming a multi-layer dielectric layer on a substrate, etching the multi-layer dielectric layer to form vias for electrode members contacting circuitry below, forming insulating spacers on the vias, etching through a top layer in the multi-layer dielectric layer to form trenches between the insulating spacers for electrode members contacting circuitry above, filling the vias and trenches with a conductive material using the metallization process. Thin film bridges of memory material are formed over the electrode layer.
Macronix International Co., Ltd.
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Kuang Yeu Erh Kun Chiahua Yi Chou
Hsieh Lai Ho Chen