Myers Bigel Sibley & Sajovec, P.A.
Method of fabricating trap type nonvolatile memory device
A method of fabricating a floating trap type nonvolatile memory device includes forming a cell gate insulating layer on a semiconductor substrate, the cell gate insulating layer being comprised of a lower insulating layer, a charge storage layer and an upper insulating layer sequentially stacked; thermally annealing the cell gate insulating Layer at a temperature of approximately 810° C. to approximately 1370° C.; and forming a gate electrode on the thermally annealed cell gate insulating layer.
Samsung Electronics Co., Ltd.
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Young-Geun Sung-Jung Chang-Hyun Han-Mei Young-Sun Seung-Hwan
Park Kim Lee Choi Kim Lee