Haynes and Boone, LLP
Crosstalk improvement through P on N structure for image sensor
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Shou-Gwo Chung-Wei Han-Chi Chun-Yao
Wuu Chang Liu Ko