Semiconductor structure
The present invention provides a semiconductor structure, comprising a substrate, a gate structure, a source/drain region and at least a dislocation. The gate structure is disposed on the substrate. The source/drain region is disposed in the substrate at two sides of the gate structure. The dislocation is located in the source/drain region, and is asymmetrical relating to a middle axis of the source/drain region.
UNITED MICROELECTRONICS CORP.
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inventional inventional inventional inventional
Yen-Liang Chung-Fu Yi-Wei Jhen-Cyuan Man-Ling Chia-Jong Wen-Jiun
Wu Chang Chen Li Lu Liu Shen