Harness, Dickey & Pierce. P.L.C.
Semiconductor memory device and magneto-logic circuit
Provided are a semiconductor memory device and a magneto-logic circuit which change the direction of a magnetically induced current according to a logical combination of logic states of a plurality of input values. The semiconductor memory device comprises a current driving circuit, a magnetic induction layer, and a resistance-variable element. The current driving circuit receives a plurality of input values and changes the direction of a magnetically induced current according to a logical combination of logic states of the input values. The magnetic induction layer induces magnetism having a direction varying according to the direction of the magnetically induced current. The resistance-variable element has a resistance varying according to the direction of the magnetism induced by the magnetic induction layer.
Samsung Electronics Co., Ltd.
G Y G G
G11C Y10S G11C G11C
inventional additional inventional inventional
Seung-jun Sung-hoon Kee-won Hyung-soon Young-jin In-jun
Lee Choa Kim Shin Cho Hwang