Brinks Hofer Gilson & Lione
Spin valve thin-film magnetic device having free magnetic layer in ferrimagnetic state and manufacturing method therefor
A spin valve thin-film magnetic device is provided, in which the asymmetry can be reduced. The spin valve thin-film magnetic device comprises a free magnetic layer and a first and a second fixed magnetic layer, which are provided respectively at each side of the free magnetic layer in the thickness direction thereof. In the spin valve thin-film magnetic device, the free magnetic layer is composed of a first and a second ferromagnetic free layer, in which the entire free magnetic layer is in a ferrimagnetic state, the first fixed magnetic layer is composed of a first and a second pinned ferromagnetic layer, in which the entire first fixed magnetic layer is in a ferrimagnetic state, and the second fixed magnetic layer is composed of a third and a fourth pinned ferromagnetic layer, in which the entire second fixed magnetic layer is in a ferrimagnetic state. In addition, magnetization directions of the second and the third pinned ferromagnetic layers, which are closer to the free magnetic layer, are antiparallel to each other.
Alps Electric Co., Ltd.
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B82Y G11B H01F G11B G01R H01F H01F B82Y H01F G11B G11B B82Y Y10T Y10T
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Kenichi Fumihito Masamichi Yosuke Naoya
Tanaka Koike Saito Ide Hasegawa