JCIPRNET
Semiconductor device and method for fabricating the same
A semiconductor device includes a substrate, a first transistor, and a second transistor. The first transistor is disposed on the substrate within a first region and includes a first gate electrode. The first gate electrode includes a first filter layer between and in contact with a first conductive layer and a second conductive layer. The second transistor is disposed on the substrate within a second region and includes a second gate electrode. The second gate electrode includes a second filter layer between and in contact with a third conductive layer and a fourth conductive layer. The first transistor and the second transistor have a same conductive type, a first threshold voltage of the first transistor is lower than a second threshold voltage of the second transistor, and a first thickness of the first filter layer is larger than a second thickness of the second filter layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Ji-Cheng Hsien-Ming Cheng-Chang Chia-Lin
Chen Lee Wei Hsu