Kim & Stewart LLP
Semiconductor memory device
A semiconductor memory device includes a channel layer and a gate electrode. A first insulating layer is between the semiconductor layer and the gate electrode. A second insulating layer is between the first insulating layer and the gate electrode. A storage region is between the first insulating layer and the second insulating layer. The storage region comprises metal or semiconductor material. A coating layer comprises silicon and nitrogen and surrounds the storage region. The coating layer is between the storage region and the second insulating layer and between the storage region and the first insulating layer.
TOSHIBA MEMORY CORPORATION
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Kazuhiro Hiroyuki Masayuki Atsushi Yuta Kazuhisa Keiichi Shinji
Matsuo Yamashita Tanaka Takahashi Saito Matsuda Sawa Mori