Slater and Matsil, L.L.P.
Cross OD FinFET patterning
A method of forming an integrated circuit structure includes providing a semiconductor substrate; providing a first lithography mask, a second lithography mask, and a third lithography mask; forming a first mask layer over the semiconductor substrate, wherein a pattern of the first mask layer is defined using the first lithography mask; performing a first etch to the semiconductor substrate to define an active region using the first mask layer; forming a second mask layer having a plurality of mask strips over the semiconductor substrate and over the active region; forming a third mask layer over the second mask layer, wherein a middle portion of the plurality of mask strips is exposed through an opening in the third mask layer, and end portions of the plurality of mask strips are covered by the third mask layer; and performing a second etch to the semiconductor substrate through the opening.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H
H01L H01L
inventional inventional
Tsung-Lin Chang-Yun Ming-Feng
Lee Chang Shieh