Slater Matsil, LLP
Method of forming a fin-like BJT
A bipolar junction transistor (BJT) formed using a fin field-effect transistor (FinFET) complimentary metal-oxide-semiconductor (CMOS) process flow is provided. The BJT includes an emitter fin, a base fin, and a collector fin formed on a substrate. The base fin encloses the emitter fin and collector fin encloses the emitter fin. In some embodiments, the emitter fin, base fin, and collector fin have a square shape when viewed from above and are concentric with each other.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Ming-Feng Yi-Tang Chih-Sheng
Shieh Lin Chang