Green, Howard & Mughal LLP
Field-effect transistors with buried gates and methods of manufacturing the same
Field-effect transistors with buried gates and methods of manufacturing the same are disclosed. An example apparatus includes a source, a drain, and a semiconductor material positioned between the source and the drain. The example apparatus further includes a first gate positioned adjacent the semiconductor material. The example apparatus also includes a second gate positioned adjacent the semiconductor material. A portion of the semiconductor material is positioned between the first and second gates.
Intel Corporation
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Han Wui Marko Paul Sansaptak
Then Radosavljevic Fischer Dasgupta