Semiconductor device and fabrication method
A semiconductor device using a small-sized metal contact as a program gate of an antifuse, and a method of fabricating the same are described. The semiconductor device includes a metal contact structure formed on a semiconductor substrate of a peripheral circuit area, and includes a first gate insulating layer to be ruptured. A gate structure is formed on the semiconductor substrate to one side of the metal contact structure.
SK HYNIX INC.
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Yong Sun
Jung