Slater Matsil, LLP
Barrier-free approach for forming contact plugs
A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Hung-Hsu Wei-Yip Sheng-Hsuan Chih-Wei Ching-Yi
Chen Loh Lin Chang Chen