Eschweiler & Associates, LLC
Band pass filter for 2.5D/3D integrated circuit applications
Some embodiments relate to a device and method for a band pass filter with a reduced cost, area penalty, and manufacturing complexity relative to current solutions. An integrated passive device chip includes a plurality of capacitors embedded in a common molding compound along with a transceiver chip. The integrated passive device chip and the transceiver chip are also arranged within a polymer package. An ultra-thick metallization layer is disposed within the polymer package and configured to couple the integrated passive device chip to the transceiver chip. The ultra-thick metallization layer also forms a plurality of transmission lines, wherein the combined integrated passive device chip and transmission lines form a band pass filter with improved frequency response, noise immunity, and cost and area as compared to conventional solutions.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chewn-Pu Feng Wei Huan-Neng Shuo-Mao Der-Chyang
Jou Kuo Chen Chen Yeh