Harness, Dickey & Pierce, P.L.C.
Method for forming tungsten contact plug
A method for forming a tungsten contact plug of a semiconductor device including depositing an insulating layer on a semiconductor substrate, etching the insulating layer to form a contact hole, which exposes a conductive region, forming a barrier layer on the semiconductor substrate having the contact hole, changing characteristics of a portion of the barrier layer on the insulating layer and the portion of the barrier layer in the contact hold such that the characteristics between the barrier layer on the insulating layer and the barrier layer in the contact hole differ, depositing a tungsten layer for forming the tungsten contact plug, on the barrier layer, and removing the tungsten layer from the upper portion of the insulating layer to planarize the semiconductor device.
Samsung Electronics Co., Ltd.
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inventional inventional additional inventional inventional inventional
Eung-Joon Jung-Wook Hyun-Seok Ji-Soon
Lee Kim Lim Park