Jacobson, Price, Holman & Stern, PLLC
Method of fabricating SOI wafer
 The present invention is to fabricate SOI wafer whose the silicon layer is very uniform and the impurity concentration is low. The insulating layer, that is, a composite layer of SiO2 and silicon, is grown on oxide substrate by means of a molecular beam epitaxy fabricating method using silicon as an original material in the oxygen atmosphere. The composite layer of the oxide and silicon is grown according to gradual decreasing the pressure of oxygen atmosphere. A top silicon layer of uniform thickness is grown by means of a molecular beam epitaxy fabricating method using only silicon material consecutively on the composite layer. 
Electronics and Telecommunications Research Institute
H
H01L
inventional
Seong Jae Sang Chul Moon Ho Min Cheol Kyoung Wan
Lee Oh Park Shin Park