Moser Taboada
Methods for controlling Fin recess loading
A method of processing a substrate includes depositing an oxide material on a substrate having a first region, a second region and a plurality of features, wherein the first region has a high feature density and the second region has a low feature density; and controlling a ratio of an etch rate of the oxide material in the first region to an etch rate of the oxide material in the second region by forming an ammonium hexafluorosilicate ((NH4)2SiF6) layer having a first thickness atop the oxide material in the first region and having a second thickness atop the oxide material in the second region.
APPLIED MATERIALS, INC.
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H01L H01L
inventional inventional
Kwang-Soo Sean Olivier Jungmin
Kim Kang Luere Ko