Beyer Weaver & Thomas, LLP
Use of ammonia for etching organic low-k dielectrics
Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than processes using N2/H2 chemistries, at similar process conditions. The difference is due to the much lower ionization potential of NH3 versus N2 in the process chemistry, which results in significantly higher plasma densities and etchant concentrations at similar process conditions.
Lam Research Corporation
H H
H01L H01L
inventional inventional
Chok W. Kuo-Lung Chung-Ju
Ho Tang Lee