Myers Bigel Sibley & Sajovec
Semiconductor devices having through silicon vias and methods of fabricating the same
A semiconductor device is provided having an insulating layer on a semiconductor substrate. The insulating layer and the semiconductor substrate define a through hole penetrating the semiconductor substrate and the insulating layer. A through electrode is provided in the through hole. A spacer is provided between the semiconductor substrate and the through electrode. An interconnection in continuity with the through electrode is provided on the insulating layer. A barrier layer covering a side and a bottom of the interconnection and a side of the through electrode is provided and the barrier layer is formed in one body.
Samsung Electronics Co., Ltd.
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Ju-Il Su-Kyoung Seong-Min Do-Sun Kun-Sang Jin-Ho
Choi Kim Son Lee Park An