Cha & Reiter, L.L.C.
Multi-layer structure for reducing capacitance and manufacturing method thereof
The invention relates to a multi-layer structure used in an optical communication field and its manufacturing method in which the capacitance effect between the metal patterns of a Silicon Optical Bench (SiOB) is significantly reduced. The multi-layer structure includes a dielectric layer and conductive patterns on a semiconductor substrate, such that the conductive patterns are separated from each other, wherein the dielectric layer and upper portions of the semiconductor substrate between the conductive patterns are etched out to a predetermined thickness to effectively reduce the capacitance without changing the area or structure of the metal patterns.
Samsung Electronics Co., Ltd.
H H
H01L H01L
additional inventional
Yu-Sik Joong-Hee
Kim Lee