McDermott Will & Emery LLP
Semiconductor device and method for fabricating the same
The present inventive concept has been made in an effort to increase the width of a channel in a silicon carbide MOSFET using a trench gate.According to the exemplary embodiment of the present inventive concept, the width of a channel can be increased, compared with the conventional art, by forming a plurality of protrusions extending to the p type epitaxial layer on both sides of the trench.
HYUNDAI MOTOR COMPANY
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Dae Hwan Kyoung-Kook Jong Seok Youngkyun
Chun Hong Lee Jung