JCIPRNET
Manufacturing methods of semiconductor image sensor devices
A plurality of radiation-sensing doped regions are formed in a substrate. A trench is formed in the substrate between the radiation-sensing doped regions. A SiOCN layer is filled in the trench by reacting Bis(tertiary-butylamino)silane (BTBAS) and a gas mixture comprising N2O, N2 and O2 through a plasma enhanced atomic layer deposition (PEALD) method, to form an isolation structure between the radiation-sensing doped regions.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Min-Hui Chin-Szu Yi-Ming Sheng-Chan Jian-Shin Chia-Hsing Cheng-Yi Chao-Ching Chih-Hui
Lin Lee Lin Li Tsai Chou Wu Chang Huang