Birch, Stewart, Kolasch & Birch, LLP
Fin field effect transistor device structure and method for forming the same
A method for forming a fin field effect transistor device structure includes forming fin structures over a substrate. The method also includes forming a gate structure across the fin structures. The method also includes forming source/drain epitaxial structures over the fin structures. The method also includes forming blocking structures between the source/drain epitaxial structures. The method also includes depositing contact structures over the source/drain epitaxial structures and between the blocking structures. The method also includes removing a top portion of the blocking structures. The method also includes depositing an etch stop layer over the blocking structures and the contact structures, so that an air gap is formed between the etch stop layer and the blocking structure.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chia-Hao Chih-Hao Yu-Ming Tien-Lu Lin-Yu Jia-Chuan
Chang Wang Lin Lin Huang You