Cantor Colburn LLP
Integrated LDMOS and VFET transistors
Embodiments are directed to devices and methods for integrating laterally diffused metal oxide semiconductor (LDMOS) technology on vertical field effect transistor (VFET) technology, which enables VFET applications to be broadened to include power amplifiers. By providing a combined asymmetric underlapped drain, high current, low subthreshold slope and LDMOS lightly doped drain, high drain resistance and high drain voltage are enabled.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Qintao Kangguo Juntao Geng
Zhang Cheng Li Wang