Myers Bigel & Sibley
Methods of manufacturing three-dimensional semiconductor memory devices
Methods of manufacturing a three-dimensional semiconductor device are provided. The method includes: forming a thin film structure, where first and second material layers of at least 2n (n is an integer more than 2) are alternately and repeatedly stacked, on a substrate; wherein the first material layer applies a stress in a range of about 0.1×109 dyne/cm2 to about 10×109 dyne/cm2 to the substrate and the second material layer applies a stress in a range of about −0.1×109 dyne/cm2 to about −10×109 dyne/cm2 to the substrate.
Samsung Electronics Co., Ltd.
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Seung-Yup Seungmok Dae-Hun JinGyun Myoungbum Yeon-Sil Kyung-Tae
Lee Shin Choi Kim Lee Sohn Jang