Muncy, Geissler, Olds & Lowe, P.C.
Semiconductor device with single step height and method for fabricating the same
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The method for fabricating the semiconductor device includes providing a substrate including an array area and a peripheral area adjacent to the array area, forming word line structures and source/drain regions in the array area, and a word line protection layer on the array area, forming a first hard mask layer over the substrate and having a step height adjacent to a border between the array area and the peripheral area, forming a bit line contact in the array area and between the word line structures by using the first hard mask layer as a pattern guide, and forming a gate electrode layer on the peripheral area.
NANYA TECHNOLOGY CORPORATION
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Lai-Cheng Yu-Ting Hui-Lin Mao-Ying
Tien Lin Chen Wang