Method for forming corrosion inhibited conductor layer
A method for passivating a target layer. There is first provided a substrate. There is then formed over the substrate a target layer, where the target layer is susceptible to corrosion incident to contact with a corrosive material employed for further processing of the substrate. There is then treated, while employing a first plasma method employing a first plasma gas composition comprising an oxidizing gas, the target layer to form an oxidized target layer having an inhibited susceptibility to corrosion incident to contact with the corrosive material employed for further processing of the substrate. Finally, there is then processed further, while employing the corrosive material, the substrate. The method is useful when forming bond pads within microelectronic fabrications. When directed towards forming patterned conductor layers, such as bond pads, the method optionally employs an inert plasma treatment of a patterned conductor layer followed by an aqueous ethanolamine treatment of the patterned conductor layer prior to a first plasma treatment of the patterned conductor layer.
Taiwan Semiconductor Manufacturing Company
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Ching-Wen Sen-Fu Jen-Shiang Chai-Der Shing-Jzy Jyh-Ping Kuang-Peng Weng-Liang Kuo-Su Kuwi-Jen Szu-Hung Jow-Feng
Cho Chen Leu Chang Tay Wang Lin Fang Huang Chang Yang Lee