Cantor Colburn LLP
Vertical transport FET having multiple threshold voltages with zero-thickness variation of work function metal
A technique relates to a semiconductor device. Fins are formed of varying concentrations of germanium. Gate material is formed on the fins. Source or drain (S/D) regions are adjacent to the fins, and transistor devices include the fins.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Shogo Choonghyun Kangguo Juntao
Mochizuki Lee Cheng Li