Mesa edge shielding trench Schottky rectifier and method of manufacture thereof
A mesa edge shielding trench Schottky rectifier includes a semiconductor substrate; an epitaxial layer grown on the first surface of the semiconductor substrate; a plurality of trenches spaced from each other and extended into the epitaxial layer, wherein an epitaxial region between two adjacent trenches forms the silicon mesa; a polysilicon region, having a T-shape, is separated from an inner wall of each of the trenches and a top surface of the epitaxial layer by an oxide layer, wherein a width of the top surface of the polysilicon region is bigger than an open size of each of the trenches; an anode electrode, deposited on an entire structure, forming an ohmic contact on the top surface of the polysilicon region and a Schottky contact on an exposed surface of the epitaxial layer; and a cathode electrode, deposited on the second surface of the semiconductor substrate, forming an ohmic contact thereon.
Suzhou Silikron Semicoductor Co., Ltd
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H01L H01L
inventional inventional
Wei Fan Xiaozhong
Liu Wang Sun