Finnegan, Henderson, Farabow, Garrett & Dunner
Semiconductor apparatus having a zener diode integral with a resistor-transistor combination
 A semiconductor apparatus includes a p.sup.+ -type region formed in the surface area of an n.sup.- -type semiconductor layer formed on a p-type semiconductor substrate, and an n.sup.+ -type region which is formed in a contact relationship with respect to the p.sup.+ -type region and forms a Zener diode in conjunction with the p.sup.+ -type region. A p-type region is further formed in the surface area of the semiconductor layer and is electrically connected to the n.sup.+ -type region by a contact layer. The n.sup.+ -type region forms a resistor between the contact layer and the p.sup.+ -type region. The p-type region, semiconductor layer and substrate constitute a pnp transistor. 
Tokyo Shibaura Denki Kabushiki Kaisha
H H
H01L H01L
inventional inventional
Mitsuo
Tsuzuki