Eschweiler & Potashnik, LLC
Bonding process for forming semiconductor device structure
A semiconductor device structure is provided. The semiconductor device structure includes a first wafer comprising a first face and a second face opposite the first face and having a plurality of predetermined die areas. A plurality of recesses are disposed in the first face of the first wafer. A first recess of the plurality of recesses extends in a direction substantially parallel to a first edge of at least one of the plurality of predetermined die areas and laterally surrounds the at least one of the plurality of predetermined die areas. A second wafer is bonded to the second face of the first wafer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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I-Shi Chih-Hang Jen-Hao
Wang Chang Liu