Cohen, Pontani, Lieberman & Pavane
Method of manufacturing a quantum diffraction transistor
 The present invention discloses a technique for applying diffraction characteristics of electrons to a two-dimensional electronic device to manufacture multi-functional transistor having various ON/OFF states. Method of manufacturing a quantum diffraction transistor according to the present invention is capable of adjusting the amplitude of drain current and having various ON/OFF states utilizing diffraction characteristics of electrons by interposing a reflection-type diffraction grating in a bent electron path. In the inventive multi-functional quantum diffraction transistor using a two dimensional electron gas in quantum well structure formed at a different species junction in a heterostructure semiconductor device and having a bent electron path between the source electrode and the drain electrode with a reflection-type diffraction grating, the quantum diffraction effect of the electrons is used for the control of the diffracted drain current. 
Electronics and Telecommunications Research Institute
Y H H H B
Y10S H01L H01L H01L B82Y
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Min Cheol Seong Jae Kyoung Wan
Shin Lee Park