JCIPRNET
Resistive memory and resistance window recovery method of resistive memory cell thereof
A resistive memory and a resistance window recovery method for a resistive memory cell thereof are provided. During a first period, an over reset voltage difference is applied between a top electrode and a bottom electrode of the resistive memory cell, wherein the over reset voltage difference falls in a reset complementary switching (reset-CS) voltage range of the resistive memory cell. During a second period, a set voltage difference is applied between the top electrode and the bottom electrode of the resistive memory cell to increase a compliance current of the resistive memory cell. During a third period, a reset operation is performed on the resistive memory cell.
Winbond Electronics Corp.
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Min-Chih Chuan-Sheng Shao-Ching Ming-Che Ping-Kun
Wei Chou Liao Lin Wang