Cantor Colburn LLP
Self-aligned contact with metal-insulator transition materials
Embodiments of the present invention are directed to techniques for forming a self-aligned contact liner using metal-insulator transition materials. The self-aligned contact architecture described herein prevents a short between the gate and the source/drain, even when the self-aligned contact (SAC) cap has eroded to the point where the gate is exposed. In a non-limiting embodiment of the invention, a dielectric cap is formed over a conductive gate. A source or drain region is formed adjacent to the conductive gate. A dielectric liner is formed over the dielectric cap and the source or drain region such that a first portion of the dielectric liner is on a surface of the source or drain region. The dielectric liner includes a metal-insulator transition material. The first portion of the dielectric liner is metalized via germanium oxide sublimation.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Juntao Choonghyun Peng Kangguo
Li Lee Xu Cheng