Merchant & Gould P.C.
Method for manufacturing vertical-channel tunneling transistor
The present invention belongs to the technical field of semiconductors and specifically relates to a method for manufacturing a vertical-channel tunneling transistor. In the present invention, the surrounding gate gate structure improves the control capacity of the gate and the source of narrow band gap material can enhance the device driving current. The method for manufacturing a vertical-channel tunneling transistor put forward by the present invention capable of controlling the channel length precisely features simple process, easy control and reduction of production cost.
FUDAN University
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H01L H01L H01L H01L
additional inventional additional inventional
Pengfei Xi Qingqing Wei Wei
Wang Lin Sun Liu Zhang