Harness, Dickey & Pierce, P.L.C.
Method of forming an at least penta-sided-channel type of FinFET transistor
An at least penta-sided-channel type of FinFET transistor may include: a base; a semiconductor body formed on the base, the body being arranged in a long dimension to have source/drain regions sandwiching a channel region, at least the channel, in cross-section transverse to the long dimension, having at least five planar surfaces above the base; a gate insulator on the channel region of the body; and a gate electrode formed on the gate insulator.
Samsung Electronics Co., Ltd.
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H01L H01L
inventional inventional
Hwa-Sung Ueno Hyun-Suk Jae-Yoon Seung-Hwan Ho Moon-han
Rhee Tetsuji Kim Yoo Lee Lee Park