Method of cleaning a chamber of a CVD machine and elements within
The present invention provides a method of cleaning a chamber of a CVD machine and elements within. A gas mixture of carbon tetrafluoride (CF4) and perfluoro ethane (C2F6) is first injected into the chamber. After performing a surface treatment, comprising a sandblasting step or a polishing step, on the surfaces of the elements, the elements are then immersed in a cleaning solution, comprising at least ammonia water (NH4OH) and hydrogen peroxide (H2O2) at a temperature maintained between 40&deg; C. to 70&deg; C. Finally, the temperature of the cleaning solution is raised so that the residual layer on the surface of the elements can drop from the surfaces of the heater and the process kits or dissolve into the cleaning solution.
United Microelectronics Corp.
C C C C
C11D C11D C11D C23C
inventional inventional inventional inventional
Ping-Chung Tsan-Chi Wei-Hsu Cheng-Yuan Wei-Hao
Chung Chu Wang Yao Lee