Antonelli, Terry, Stout and Kraus, LLP.
Display device with active-matrix transistor having silicon film modified by selective laser irradiation
An active matrix display device is provided which includes an active matrix substrate having a modified region which is formed by applying laser beams selectively to a silicon film formed on an insulating board. Active circuits, which include pixel circuits, are formed in the modified region. The pitch of the pixel circuits formed in a display region of the active matrix substrate, which display region is in the modified region, is set to be substantially equal to a pitch of peripheral circuits formed in the modified region in a peripheral region of the active matrix substrate. In addition, the pitch of the pixel circuits can be set to be substantially twice the pitch of the pixels themselves.
Hitachi, Ltd.
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Makoto Hiroshi Mikio Mutsuko
Ohkura Kikuchi Hongo Hatano