Method for producing high carrier concentration p-Type transparent conducting oxides
A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.
Alliance For Sustainable Energy, LLC
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Xiaonan Timothy J. Yanfa Timothy A. Clay M.
Li Coutts Yan Gessert Dehart