McClure, Qualey & Rodack, LLP
Photomask and method for fabricating source/drain electrode of thin film transistor
A method is provided for fabricating source/drain electrodes of a thin film transistor. The method generally provides a substrate having a first gate electrode and a second gate electrode adjacent and electrically connected. The method further provides coating a photoresist layer on the metal layer, and performing an exposure process on the photoresist layer by a photomask. The method further performs a development process on the exposed photoresist layer to form a photoresist pattern layer with different thicknesses on the metal layer, and then etches the metal layer using the photoresist pattern layer as an etch mask, to form a pair of first source/drain electrodes on the first gate electrode and a pair of second source/drain electrodes on the second gate electrode.
AU Optronics Corp.
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Hsiang-Chih Ta-Wen Chia-Ming Chou-Huan Zong-Long Che-Yung Chun-Yi
Hsiao Liao Chang Yu Jhang Lai Chiang