Slater Matsil, LLP
Fin field-effect transistor device and method
A method includes forming a doped region on a top portion of a substrate, forming a first epitaxial layer over the substrate, forming a recess in the first epitaxial layer, the recess being aligned to the doped region, performing a surface clean treatment in the recess, the surface clean treatment includes: oxidizing surfaces of the recess to form an oxide layer in the recess, and removing the oxide layer from the surfaces of the recess, and forming a second epitaxial layer in the recess.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Yu-Wen Ming-Yuan Ming-Jie Che-Yuan Che-Lun Jiun-Ming Hsin-Chieh Shiao-Shin Yu-Lin Ji-Yin
Wang Wu Huang Hsu Chang Kuo Huang Cheng Tsai Tsai