Haynes and Boone, LLP
Method for removing hard mask oxide and making gate structure of semiconductor devices
A method includes forming a first gate above a semiconductor substrate, forming a hard mask on the first gate, and forming a contact etch stop layer (CESL) on the hard mask. No hard mask is removed between the step of forming the hard mask and the step of forming the CESL. The method further includes forming an interlayer dielectric (ILD) layer over the CESL, and performing one or more CMP processes to planarize the ILD layer, remove the CESL on the hard mask, and remove at least one portion of the hard mask.
Taiwan Semiconductor Manufacturing Co., Ltd.
H
H01L
inventional
Sey-Ping Clement Hsingjen Neng-Kuo Chun-Wei Yi-An
Sun Wann Chen Chang Lin