Hoffman Warnick LLC
Semiconductor device including graded gate stack, related method and design structure
A semiconductor device is disclosed. The semiconductor device includes a substrate; and a gate structure disposed directly on the substrate, the gate structure including: a graded region with a varied material concentration profile; and a metal layer disposed on the graded region.
GlobalFoundries, Inc.
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Jinping Keith K. H. Min Joseph F. Michael P.
Liu Wong Dai Shepard, Jr. Chudzik