Withrow & Terranova, PLLC
Integration of vertical GaN varactor with HEMT
Aspects generally relate to a P−N junction varactor that can be integrated with high electron mobility transistor (HEMT) in a single device or die. The varactor and HEMT are fabricated with different materials forming various layers of the varactor and HEMT. Using different material stack-up to form the varactor and HEMT allows characteristics of the varactor and HEMT to be varied for improved performance in different operating scenarios. The integrated varactor and HEMT device may be used for RF circuits, such as radio frequency front end (RFFE) devices for use in 5G.
QUALCOMM Incorporated
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Gengming Xia Bin
Tao Li Yang