Cantor Colburn LLP
Nanosheet transistor having abrupt junctions between the channel nanosheets and the source/drain extension regions
Embodiments of the invention are directed to a method that includes forming a nanosheet stack over a substrate. The nanosheet stack includes a first channel nanosheet having a first end region, a second end region, and a central region positioned between the first end region and the second end region. The first end region, the second end region, and the central region each includes a first type of semiconductor material, wherein, when the first type of semiconductor material is at a first temperature, the first type of semiconductor material has a first diffusion coefficient for a dopant. The central region is converted to a second type of semiconductor material, wherein, when the second type of semiconductor material is at the first temperature, the second type of semiconductor material has a second diffusion coefficient for the dopant.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Shogo Choonghyun Juntao Kangguo
Mochizuki Lee Li Cheng