Patterson & Sheridan, LLP
Method of etching a boron doped carbon hardmask
In one embodiment, a method is proposed for etching a boron dope hardmask layer. The method includes flowing a process gas comprising at least CH4 into a processing chamber. Forming a plasma in the process chamber from the process gas and etching the boron doped hardmask layer in the presence of the plasma. In other embodiments, the process gas utilized to etch the boron doped hardmask layer includes CH4, Cl2, SF6 and O2.
APPLIED MATERIALS, INC.
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Jun Wan Jeong Hyun Byungkook Wonmo Hun Sang
Kim Yoo Kong Ahn Kim