Haynes and Boone, LLP
Methods and structures of novel contact feature
A method of fabricating a semiconductor device is disclosed. The method includes forming a fin structure on a substrate; forming a dummy gate over the fin structure; forming spacers on sides of the dummy gate; forming a doped region within the fin structure; replacing the dummy gate with a metal gate; replacing an upper portion of the metal gate with a first dielectric layer; forming a conductive layer directly on the doped region; replacing an upper portion of the conductive layer with a second dielectric layer; removing the first dielectric layer thereby exposing a sidewall of the spacer; removing an upper portion of the spacer to thereby expose a sidewall of the second dielectric layer; removing at least a portion of the second dielectric layer to form a trench; and forming a conductive plug in the trench.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Zhi-Chang Chia-Hao Ke-Jing Wei-Hao Jia-Chuan Yi-Hsiung Chih-Hao Chia-Hao
Lin Chang Yu Wu You Lin Wang Kuo