Perkins Coie LLP
UV light emitting diode and method of fabricating the same
A UV light emitting diode and a method of fabricating the same are provided. The light emitting diode includes an active area between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer, wherein the active area includes a plurality of barrier layers containing Al, a plurality of well layers containing Al and alternately arranged with the barrier layer, and at least one conditioning layer. Each conditioning layer is placed between the well layer and the barrier layer adjacent to the well layer and is formed of a binary nitride semiconductor. The design of the conditioning layer can reduce stress of the active area while allowing uniform control of the composition of the well layers and/or the barrier layers.
SEOUL VIOSYS CO., LTD.
H H
H01L H01L
inventional inventional
Chang Suk Jeong Hun Hyo Shik Ki Yon Hwa Mok
Han Heo Choi Park Kim