Myers Bigel Sibley & Sajovec
Mesa termination structures for power semiconductor devices including mesa step buffers
An electronic device includes a drift layer having a first conductivity type, a buffer layer having a second conductivity type, opposite the first conductivity type, on the drift layer and forming a P−N junction with the drift layer, and a junction termination extension region having the second conductivity type in the drift layer adjacent the P−N junction. The buffer layer includes a step portion that extends over a buried portion of the junction termination extension. Related methods are also disclosed.
Cree, Inc.
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Anant K. Qingchun
Agarwal Zhang