Fliesler, Dubb, Meyer & Lovejoy LLP
Method for annealing damaged semiconductor regions allowing for enhanced oxide growth
 A method of forming an oxide enhancing region, such as phosphorus, in a semiconductor substrate with minimal damage is provided. The method includes the steps of forming an oxide enhancing region in the semiconductor substrate to a depth below the semiconductor substrate. A 308 nm excimer laser is then applied to the oxide enhancing region in order to reduce the damage caused by forming the oxide enhancing region. A uniform and reliable oxide layer is then formed on the surface of the substrate over the damage reduced oxide enhancing region. 
Advanced Micro Devices, Inc.
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Emi Xiao-Yu Sunil
Ishida Li Mehta