Haynes and Boone, LLP
Dummy insertion for improving throughput of electron beam lithography
An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H G G G H
H01J G03F G03F G03F H01J
inventional inventional additional inventional inventional
Ta-Wei Chien-Chih Chia-Hua Chien-Cheng Wen Hsin-Wei Shih-Ming Chun-Hung
Ou Chen Chang Chen Lo Wu Chang Liu