JCIPRNET
Light emitting diode with Bragg reflector
A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.
Genesis Photonics Inc.
H H
H01L H01L
inventional inventional
Sheng-Tsung Tung-Lin Teng-Hsien Yi-Ru Yan-Ting Hung-Chuan Shao-Ying Kuan-Chieh Jing-En Chih-Ming
Hsu Chuang Lai Huang Lan Mai Ting Huang Huang Shen