Williams Morgan, P.C.
Method, apparatus and system for improved performance using tall fins in finFET devices
At least one method, apparatus and system disclosed herein fin field effect transistor (finFET) comprising a tall fin having a plurality of epitaxial regions. A first fin of a transistor is formed. The first fin comprising a first portion comprising silicon, a second portion comprising silicon germanium and a third portion comprising silicon. A gate structure above the third portion is formed. An etching process is performed for removing the silicon germanium of the second portion that is not below the gate structure. A first epitaxy region is formed above the first portion. A second epitaxy region is formed vertically aligned with the first epitaxy region and above the silicon germanium of the second portion that is below the gate structure.
GLOBALFOUNDRIES INC.
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Jinping Hui Min-Hwa
Liu Zang Chi