Slater Matsil, LLP
Dielectric punch-through stoppers for forming FinFETs having dual Fin heights
A semiconductor structure includes a semiconductor substrate having a first portion and a second portion. A first Fin field-effect transistor (FinFET) is formed over the first portion of the semiconductor substrate, wherein the first FinFET includes a first fin having a first fin height. A second FinFET is formed over the second portion of the semiconductor substrate, wherein the second FinFET includes a second fin having a second fin height different from the first fin height. A top surface of the first fin is substantially level with a top surface of the second fin. A punch-through stopper is underlying and adjoining the first FinFET, wherein the punch-through stopper isolates the first fin from the first portion of the semiconductor substrate.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chen-Hua Chen-Yi Cheng-Hung Chen-Nan Shih-Ting
Yu Lee Chang Yeh Hung