F. Chau & Associates, LLC
Metal oxide alloy layer, method of forming the metal oxide alloy layer, and methods of manufacturing a gate structure and a capacitor including the metal oxide alloy layer
A metal oxide alloy layer comprises a first layer including a first metal oxide and having a first thickness, and a second layer formed on the first layer, the second layer including a second metal oxide and having a second thickness, wherein a value of the first thickness is such that the first metal oxide is allowed to move into the second layer and a value of the second thickness is such that the second metal oxide is allowed to move into the first layer to form a single-layered structure in which the first and second metal oxides are mixed.
Samsung Electronics Co., Ltd
C H H H H H H H H H H C C H
C23C H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L C23C C23C H01L
inventional inventional inventional inventional inventional additional inventional inventional additional additional inventional inventional inventional inventional
Jun-Hyun Jung-Sik Jung-Ho Ji-Hyun Tae-Min
Cho Choi Lee Lee Eom