Wood, Herron & Evans, LLP
Semiconductor-on-insulator high-voltage device structures, methods of fabricating such device structures, and design structures for high-voltage circuits
High-voltage device structures, methods for fabricating such device structures using complementary metal-oxide-semiconductor (CMOS) processes, and design structures for high-voltage circuits. The planar device structure, which is formed using a semiconductor-on-insulator (SOI) substrate, includes a semiconductor body positioned between two gate electrodes. The gate electrodes and the semiconductor body may be formed from the monocrystalline SOI layer of the SOI substrate. A dielectric layer separates each of the gate electrodes from the semiconductor body. These dielectric layers are formed by defining trenches in the SOI layer and filling the trenches with a dielectric material, which may occur concurrent with a process forming device isolation regions.
International Business Machines Corporation
H H
H01L H01L
inventional inventional
Christopher S. Junjun Mitra Robert J. Michel J. Tom C.
Putnam Li Souvick Gauthier, Jr. Abou-Khalil Lee