Blakely, Sokoloff, Taylor & Zafman
Double exposure patterning with carbonaceous hardmask
Methods to pattern features in a substrate layer by exposing a photoresist layer more than once. In one embodiment, a single reticle may be exposed more than once with an overlay offset implemented between successive exposures to reduce the half pitch of the reticle. In particular embodiments, these methods may be employed to reduce the half pitch of the features printed with 65 nm generation lithography equipment to achieve 45 nm lithography generation CD and pitch performance.
Applied Materials, Inc.
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inventional inventional inventional
Jen Yongmei Chorng-Ping Michael P. Christopher D. Susie X. Kenneth Xumou Raymond Hoiman Christopher Siu Wing Hui W. Huixiong Jiahua
Shu Chen Chang Duane Bencher Yang MacWilliams Xu Hung Ngai Chen Dai Yu