Cantor Colburn LLP
Method of fabrication of ETSOI CMOS device by sidewall image transfer (SIT)
Disclosed is a process to prepare extremely thin semiconductor on insulator complementary metal-oxide-semiconductor devices having n-type and p-type metal oxide semiconductor field-effect transistors. The pFET and nFET devices of different strain, size, and geometry are prepared on the same chip without the requirement for an extra mask step.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Kangguo Juntao
Cheng Li