Haynes and Boone, LLP
Ridge structure for back side illuminated image sensor
Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Wen-De Dun-Nian Pao-Tung Keng-Yu Chun-Chieh Jen-Cheng
Wang Yaung Chen Chou Chuang Liu