Haynes and Boone, LLP
Fin structure of fin field effect transistor
The fin structure includes a first portion and a second, lower portion separated at a transition. The first portion has sidewalls that are substantially perpendicular to the major surface of the substrate. The lower portion has tapered sidewalls on opposite sides of the upper portion and a base having a second width larger than the first width.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Clement Hsingjen Feng Tsung-Lin Hung-Ming Chang-Yun
Wann Yuan Lee Chen Chang