Trop, Pruner & Hu, P.C.
Defect transferred and lattice mismatched epitaxial film
An embodiment uses a very thin layer nanostructure (e.g., a Si or SiGe fin) as a template to grow a crystalline, non-lattice matched, epitaxial (EPI) layer. In one embodiment the volume ratio between the nanostructure and EPI layer is such that the EPI layer is thicker than the nanostructure. In some embodiments a very thin bridge layer is included between the nanostructure and EPI. An embodiment includes a CMOS device where EPI layers covering fins (or that once covered fins) are oppositely polarized from one another. An embodiment includes a CMOS device where an EPI layer covering a fin (or that once covered a fin) is oppositely polarized from a bridge layer covering a fin (or that once covered a fin). Thus, various embodiments are disclosed from transferring defects from an EPI layer to a nanostructure (that is left present or removed). Other embodiments are described herein.
Intel Corporation
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Van Gilbert Nancy Robert Sansaptak Niti Benjamin Marko Willy Jack Matthew Niloy Ravi Han Wui
Le Dewey Zelick Chau Dasgupta Goel Chu-Kung Radosavljevic Rachmady Kavalieros Metz Mukherjee Pillarisetty Then