Duane Morris LLP
System and method of ion beam source for semiconductor ion implantation
An apparatus comprises an ionization chamber for providing ions during a process of ion implantation, and an electron beam source device inside the ionization chamber. The electron beam source device comprises a field emission array having a plurality of emitters for generating electrons in vacuum under an electric field.
Taiwan Semiconductor Manufacturing Co., Ltd.
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H01J H01J C23C H01J H01J
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Chun-Lin Wen-Yu Chih-Hong Chi-Ming Chin-Hsiang
Chang Ku Hwang Yang Lin