Haynes and Boone, LLP
EUV metallic resist performance enhancement via additives
A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.
Taiwan Semiconductor Manufacturing Co., Ltd.
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An-Ren Ching-Yu Joy
Zi Chang Cheng