Structure of nonvolatile memory array
A structure of a nonvolatile memory array with low source line sheet resistance is disclosed in this present invention. The key aspect of this present invention is employing a buried conductive region as the source line of a nonvolatile memory array. The topology of the above-mentioned buried conductive region is different from the source line in the prior art. Therefore, this invention can provide a nonvolatile memory array for reducing the source line sheet resistance and achieving the reliability and the operating performance of the nonvolatile memory array.
Macronix International Co., Ltd.
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H01L H01L
inventional inventional
Hsuan-Ling Cheng-Ming Huei-Huarng
Kao Yih Chen