Robinson Intellectual Property Law Office, P.C.
Manufacturing method for semiconductor device
The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.
Semiconductor Energy Laboratory Co., Ltd.
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Satoshi Takashi Taketomi Mitsuhiro Shunpei
Toriumi Ohtsuki Asami Ichijo Yamazaki