Patterson + Sheridan LLP
Method of forming film stacks with reduced defects
A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.
Applied Materials, Inc.
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Jose Angelo Hidehiro Deenesh Ganesh Thian Choi Zhijun Xinhai Yue Arkajit Chuan Ying Daemian Raj Vu Ngoc Tran Miguel S. Nikhil Sudhindrarao
Olave Kojiri Padhi Balasubramanian Lim Jiang Han Chen Roy Barman Wang Benjamin Raj Nguyen Fung Jorapur