Burr & Brown
Production of silicon carbide bodies
A method for producing a silicon carbide body, includes the steps of forming a silicon carbide mass by chemical vapor deposition, and thermally treating the silicon carbide mass under vacuum or in an inert gas atmosphere at a temperature not less than 2000&deg; C., the silicon carbide article having an electric resistivity higher than that of the silicon carbide mass having not been thermally treated.
NGK Insulators, Ltd.
C C
C23C C23C
inventional inventional
Tsuneaki Yasufumi Hirotake Makoto Hiroshi
Ohashi Aihara Yamada Murai Furukubo