Hamre, Schumann, Mueller & Larson, P.C.
Insulated-gate bipolar transistor structure and method for manufacturing the same
The present invention provides an insulated-gate bipolar transistor (IGBT) structure and a method for manufacturing the same. The structure is a planar IGBT structure, and is characterized by an ultra-thin channel and buried oxide located below the channel. The structure can provide the theoretically lowest on-state voltage drop.
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Kin on johnny Xianda Ka Kit
Sin Zhou Wong