I P & T Group LLP
Non-volatile memory device including charge trapping layer and method for fabricating the same
A non-volatile memory device includes a charge trapping layer for trapping charges. The charge trapping layer includes a linker layer formed over a substrate and including linkers to be bonded to metal ions metallic nanoparticles formed out of the metal ions over the linker layer and a nitride filling gaps between the metallic nanoparticles.
SK INNOVATION CO., LTD.
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Jun-Hyung
Kim