Ceramic package for semiconductor device
 A ceramic package used for a semiconductor device comprises a ceramic base including a die-bonding area and wire-bonding areas defined. A metal underlayer formed on the die-bonding or wire-bonding areas essentially consists of two-plated layers of: a cobalt layer plated on the ceramic base and a nickel layer plated on the cobalt layer. The underlayer is annealed and, them, a gold-plated layer is formed on the underlayer. 
Shinko Electric Industries Co., Ltd.
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Kunihiko Shinichi Yoshikazu Yoshiro Noboru
Imai Wakabayashi Hirabayashi Nishiyama Sakaguchi