Amin & Turocy, LLP
Process for fabricating an integrated circuit with a self-aligned contact
A method of forming a contact in a flash memory device utilizes a local interconnect process technique. The local interconnect process technique allows the contact to butt against or overlap a stacked gate associated with the memory cell. The contact can include tungsten. The stacked gate is covered by a barrier layer which also covers the insulative spacers.
Advanced Micro Devices, Inc.
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Unsoon Yu Angela Mark Chi Hung-Sheng Mark Tatsuya Mark Fei
Kim Sun Hui Chang Chang Chen Randolph Kajita Ramsbey Wang