Oxide semiconductor transistor and method of manufacturing the same
A method of manufacturing an oxide semiconductor transistor is provided in the present invention, which includes the step of providing an oxide semiconductor transistor on the front side of a substrate, attaching a wafer on the front side of the substrate, forming a contact hole extending from the back side of the substrate to the oxide semiconductor layer of the oxide semiconductor transistor, and filling the contact hole with metal material to form a back gate of the oxide semiconductor transistor.
UNITED MICROELECTRONICS CORP.
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Shao-Hui Hsiao Yu Xiang Yu-Cheng
Wu Chia Li Tung