WPAT, P.C.
Asymmetrically stressed field effect transistor in dynamic cell
In some embodiments, a circuit element includes a first FET and a first storage capacitor. The first FET includes a gate stack, a first source or drain region, a second source or drain region and a body structure. The gate stack is configured over the body structure. The first source or drain region and the second source or drain region are configured on opposite sides of the gate stack. The first storage capacitor includes an anode and a cathode. The first source or drain region is coupled to the anode of the first storage capacitor non-selectively, and does not have stressor material with a lattice constant different from that of a channel region in the body structure. The second source or drain structure is coupled to the anode of the first storage capacitor selectively, and has the stressor material.
Taiwan Semiconductor Manufacturing Company Ltd.
H H H H
H01L H01L H01L H01L
inventional inventional inventional additional
Chih-Yang
Chang