Harness, Dickey & Pierce, P.L.C.
GaN based light emitting devices utilizing dispersion bragg reflection layer
Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned dispersion Bragg reflection (DBR) layer on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR layer and regions between patterns of the DBR layer.
SAMSUNG ELECTRONICS CO., LTD.
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Jun-youn Hyun-gi Bok-ki Jae-won
Kim Hong Min Lee