Marshall, Gerstein & Borun LLP
Method of forming metal line of semiconductor memory device
A method of forming a metal line of a semiconductor memory device includes the steps of forming plugs of a damascene structure in a first interlayer insulating layer over a semiconductor substrate, forming a barrier metal layer, a metal layer and an anti-reflection layer on the resulting surface, etching the anti-reflection layer, the metal layer, and the barrier metal layer according a specific pattern, and forming an insulating layer on sidewalls of the metal layer.
Hynix Semiconductor Inc.
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inventional inventional inventional
Cheol Mo Eun Soo Jung Geun Seung Hee
Jeong Kim Kim Hong