Harness, Dickey & Pierce, P.L.C.
Integrated circuit device and method of manufacturing the same
An integrated circuit device includes a fin-type active region protruding from a substrate and extending in a first direction, a plurality of semiconductor patterns disposed apart from an upper surface of the fin-type active region, the plurality of semiconductor patterns each including a channel region; a gate electrode surrounding the plurality of semiconductor patterns, extending in a second direction perpendicular to the first direction, and including a main gate electrode, which is disposed on an uppermost semiconductor pattern of the plurality of semiconductor patterns and extends in the second direction, and a sub-gate electrode disposed between the plurality of semiconductor patterns; a spacer structure disposed on both sidewalls of the main gate electrode; and a source/drain region connected to the plurality of semiconductor patterns, disposed at both sides of the gate electrode, and contacting a bottom surface of the spacer structure.
Samsung Electronics Co., Ltd.
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Ryong Yongseung Seungryul Minhee Moonseung Seojin Dongchan Jungtaek Pankwi
Ha Kim Lee Choi Yang Jeong Suh Kim Park