Blakely, Sokoloff, Taylor & Zafman LLP
Non-planar semiconductor device having channel region with low band-gap cladding layer
Non-planar semiconductor devices having channel regions with low band-gap cladding layers are described. For example, a semiconductor device includes a vertical arrangement of a plurality of nanowires disposed above a substrate. Each nanowire includes an inner region having a first band gap and an outer cladding layer surrounding the inner region. The cladding layer has a second, lower band gap. A gate stack is disposed on and completely surrounds the channel region of each of the nanowires. The gate stack includes a gate dielectric layer disposed on and surrounding the cladding layer and a gate electrode disposed on the gate dielectric layer. Source and drain regions are disposed on either side of the channel regions of the nanowires.
Intel Corporation
H H H B H H H H H B H H H H H H
H01L H01L H01L B82Y H01L H01L H01L H01L H01L B82Y H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional additional inventional inventional inventional inventional additional inventional inventional
Sanaz K. Benjamin Satyarth Robert S. Ravi Han Wui Dipanjan Niloy Marko Gilbert
Gardner Chu-Kung Suri Chau Pillarisetty Then Basu Mukherjee Radosavljevic Dewey