Magnetic tunnel junction cell including multiple magnetic domains
In a particular embodiment, a magnetic tunnel junction (MTJ) structure is disclosed that includes an MTJ cell having multiple sidewalls that extend substantially normal to a surface of a substrate. Each of the multiple sidewalls includes a free layer to carry a unique magnetic domain. Each of the unique magnetic domains is adapted to store a digital value.
QUALCOMM Incorporated
G Y G G G G H
G11C Y10S G11C G11C G11C G11C H01L
inventional additional inventional inventional inventional inventional inventional
Xia
Li