Quarles & Brady LLP
EEPROM core structure embedded into BCD process and forming method thereof
The present invention provides an EEPROM core structure embedded into BCD process and forming method thereof. The EEPROM core structure embedded into BCD process comprises a selection transistor and a storage transistor connected in series, wherein the selection transistor is an LDNMOS transistor. The present invention may embed the procedure for forming the EEPROM core structure into the BCD process, which is favorable to reduce the complexity of the process.
ADVANCED SEMICONDUCTOR MANUFACTURING CO., LTD.
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Jianhua
Liu