Muncy, Geissler, Olds & Lowe, P.C.
Semiconductor structure for improving the gate adhesion and Schottky stability
A semiconductor structure for improving the gate metal adhesion and the Schottky stability, comprising: a III-nitride semiconductor having a top surface on which a conductive area and a non-conductive area are defined; a source contact metal and a first drain contact metal forming ohmic contact with the III-nitride semiconductor on the conductive area, and the first drain contact metal provided at one side of the source contact metal; and a gate metal layer comprising a gate connection line and a first gate finger extending from the gate connection line, the first gate finger interposing between the source contact metal and the first drain contact metal and forming a Schottky contact with the III-nitride semiconductor on the conductive area, wherein the first gate finger has a first terminal anchor at an end thereof surrounding the source contact metal, and the first terminal anchor has an increased width.
WIN SEMICONDUCTORS CORP.
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Wei-Chou Che-Kai Jhih-Han Yi Wei
Wang Lin Du Lien