Toler Law Group, PC
Fabrication of a transistor including a tunneling layer
In a particular embodiment, an apparatus includes an electron tunnel structure. The electron tunnel structure includes a tunneling layer, a channel layer, a source layer, and a drain layer. The tunneling layer and the channel layer are positioned between the source layer and the drain layer. The transistor device further includes a high-k dielectric layer adjacent to the electron tunnel structure.
QUALCOMM Incorporated
H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional
Xia Jun Bin
Li Yuan Yang