Magnetic tunnel junction cell including multiple vertical magnetic domains
Magnetic tunnel junction cell including multiple vertical domains. In an embodiment, a magnetic tunnel junction (MTJ) structure is disclosed. The MTJ structure includes an MTJ cell. The MTJ cell includes multiple vertical side walls. Each of the multiple vertical side walls defines a unique vertical magnetic domain. Each of the unique vertical magnetic domains is adapted to store a digital value.
QUALCOMM Incorporated
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Seung H. Xia Xiaochun
Kang Li Zhu