Eschweiler & Potashnik, LLC
RRAM memory cell with multiple filaments
In some embodiments, the present disclosure relates to a memory circuit having a first resistive random access memory (RRAM) element and a second RRAM element arranged within a dielectric structure over a substrate. The first RRAM element has a first conjunct electrode separated from a first disjunct electrode by a first data storage layer. The second RRAM element has a second conjunct electrode separated from a second disjunct electrode by a second data storage layer. A control device is disposed within the substrate and has first terminal coupled to the first conjunct electrode and the second conjunct electrode and a second terminal coupled to a word-line.
Taiwan Semiconductor Manufacturing Co., Ltd.
G H H G H H H H H H H H H H H G G H H H G
G11C H01L H01L G11C H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L G11C G11C H01L H01L H01L G11C
inventional additional inventional inventional additional additional inventional inventional inventional additional inventional inventional inventional additional inventional additional additional additional inventional inventional additional
Chih-Yang Wen-Ting Yu-Wen Chin-Chieh
Chang Chu Liao Yang