Birch, Stewart, Kolasch & Birch, LLP
Semiconductor devices and methods for manufacturing the same
A semiconductor device includes a first gallium nitride layer disposed on a semiconductor substrate, and an aluminum gallium nitride layer disposed on the first gallium nitride layer. The semiconductor device also includes an upper recess and a lower recess disposed in the aluminum gallium nitride layer, wherein the upper recess adjoins the lower recess, and the upper recess has a width that is greater than that of the lower recess. The semiconductor device further includes a second gallium nitride layer disposed in the first recess and the second recess, and a gate structure disposed on the second gallium nitride layer. In addition, the semiconductor device includes a source electrode and a drain electrode disposed on the aluminum gallium nitride layer.
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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Chia-Hao Chang-Xiang Manoj Chih-Cherng
Lee Hung Kumar Liao