Haynes and Boone, LLP
Methods of manufacturing metal-silicide features
A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the semi-conductive layer. At least a portion of the semi-conductive layer is doped by implanting through the conductive layer. The semi-conductive layer and the conductive layer may then be annealed.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Shau-Lin Chiang-Ming Chen-Tung Chii-Ming Mei-Yun Chih-Wei
Shue Chuang Lin Wu Wang Chang