Haynes and Boone, LLP
Method of semiconductor device fabrication having application of material with cross-linkable component
Provided is a material composition and method for that includes providing a primer material including a surface interaction enhancement component, and a cross-linkable component. A cross-linking process is performed on the deposited primer material. The cross-linkable component self-cross-links in response to the cross-linking process to form a cross-linked primer material. The cross-lined primer material can protect an underlying layer while performing at least one process on the cross-linked primer material.
Taiwan Semiconductor Manufacturing Co., Ltd.
H C B H H C H H C C H H C G C H H H B H C
H01L C08L B05D H01L H01L C09D H01L H01L C08L C09D H01L H01L C09D G03F C09D H01L H01L H01L B05D H01L C09D
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Wei-Han Chin-Hsiang Ching-Yu
Lai Lin Chang