Anova Law Group, PLLC
Silicon-controlled-rectifier electrostatic protection structure and fabrication method thereof
A silicon-controlled-rectifier electrostatic protection structure and a fabrication method are provided. The structure includes: a substrate of P-type; a first N-type well; a second N-type well; a third N-type well; an anode P-type doped region in the first N-type well; second N-type doped regions at sides of the first N-type well; first P-type doped regions at sides of the first N-type well; third N-type doped regions at sides of the first N-type well; gate structures and fourth N-type doped regions at the sides of the first N-type well; and fifth N-type doped regions at the sides of the first N-type well. The fourth N-type doped regions and the third N-type doped regions are disposed at sides of each of the gate structures along a first direction respectively.
Semiconductor Manufacturing International (Shanghai) Corporation Semiconductor Manufacturing International (Beijing) Corporation
H H H
H01L H01L H01L
inventional inventional inventional
Guang Jie
Chen Chen