Essential Patents Group, LLP
Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication
A device including a III-N material is described. In an example, a device includes a first layer including a first group III-nitride (III-N) material and a polarization charge inducing layer, including a second III-N material, above the first layer. The device further includes a gate electrode above the polarization charge inducing layer and a source structure and a drain structure on opposite sides of the gate electrode. The source structure and the drain structure both include a first portion adjacent to the first layer and a second portion above the first portion, the first portion includes a third III-N material with an impurity dopant, and the second portion includes a fourth III-N material, where the fourth III-N material includes the impurity dopant and further includes indium, where the indium content increases with distance from the first portion.
Intel Corporation
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Marko Sansaptak Han Wui
Radosavljevic Dasgupta Then