Nixon Peabody LLP
Semiconductor device including multiple insulating films
A semiconductor display device is formed including an interlayer insulating. Specifically, a TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
Semiconductor Energy Laboratory Co., Ltd.
Masahiko Satoshi Takashi Mitsuaki Kiyoshi Shunpei Saishi
Hayakawa Murakami Hirosure Osame Kato Yamazaki Fujikawa