Brinks Hofer Gilson & Lione
Spin-valve type magnetoresistive thin film element comprising free magnetic layer having nife alloy layer
 A spin-valve type magnetoresistive thin film element includes at least one antiferromagnetic layer, a pinned magnetic layer in contact with the antiferromagnetic layer, a nonmagnetic electrically conductive layer formed on the pinned magnetic layer, with a free magnetic layer formed thereon, a bias layer for orienting the magnetization of the free magnetic layer to a direction intersecting the magnetization direction of the pinned magnetic layer, and an electrically conductive layer for supplying a sensing current to the pinned magnetic layer, the nonmagnetic electrically conductive layer and the free magnetic layer. The free magnetic layer is composed of a NiFe alloy film and has a thickness in a range of 30 to 100 .ANG.. When the composition of the NiFe alloy is properly determined, the magnetostriction constant of the free magnetic layer can be controlled to be -2.times.10.sup.-6 to 1.times.10.sup.-6, and more preferably -0.5.times.10.sup.-6 to 0, resulting in reduced anisotropic dispersion due to height direction due to the magnetoelastic effect. The element has reduced Barkhausen noise and a high rate of change in resistance. 
Alps Electric Co., Ltd.
B G G G B H G H H
B82Y G11B G01R G11B B82Y H01F G11B H01L H01L
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Masamichi Naoya
Saito Hasegawa