Fujitsu Patent Center
Exposure mask and method of manufacturing the same, and semiconductor device manufacturing method
An exposure mask 24, includes a quartz (transparent) substrate 20, a film 21 formed on the quartz substrate 20, a rectangular main feature 21a formed in the film 21, a first assist feature 21b formed in the film 21 away from the main feature 21a and having a size that is not resolved as a rectangle that has a long side 21e opposing to one side 21d of the main feature 21d, and a second assist feature 21c formed in the film 21 and positioned on a virtual prolonged line L of a diagonal of the main feature 21a and having a size that is not resolved.
Fujitsu Microelectronics Limited
G G
G03F G03F
additional inventional
Yuji
Setta