Blakely, Sokoloff, Taylor & Zafman LLP
Field effect transistor with metal source/drain regions
A semiconductor device comprising a gate electrode formed on a gate dielectric layer formed on a semiconductor film. A pair of source/drain regions are formed adjacent the channel region on opposite sides of the gate electrode. The source and drain regions each comprise a semiconductor portion adjacent to and in contact with the semiconductor channel and a metal portion adjacent to and in contact with the semiconductor portion.
Intel Corporation
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Suman Brian S. Mark L. Amian Jack Justin K. Robert S. Marko
Datta Doyle Doczy Majumdar Kavalieros Brask Chau Radosavljevic