Harrity & Harrity, LLP
Semiconductor device
In some implementations, one or more semiconductor processing tools may form a first terminal of a semiconductor device by depositing a tunneling oxide layer on a first portion of a body of the semiconductor device, depositing a first volume of polysilicon-based material on the tunneling oxide layer, and depositing a first dielectric layer on an upper surface and a second dielectric layer on a side surface of the first volume of polysilicon-based material. The one or more semiconductor processing tools may form a second terminal of the semiconductor device by depositing a second volume of polysilicon-based material on a second portion of the body of the semiconductor device. A side surface of the second volume of polysilicon-based material is adjacent to the second dielectric layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Yu-Chu Wen-Chih Chi-Chung Chia-Ming Ming-Hong Mei-Chen Yung-Han
Lin Chiang Jen Pan Su Su Chen