Harness, Dickey & Pierce, P.L.C.
Resistive memory device for programming resistance conversion layers and method thereof
Example embodiments provide a method for programming a resistive memory device that includes a resistance conversion layer. The method may include applying multiple pulses to the resistance conversion layer. The multiple pulses may include at least two pulses, where a magnitude of each pulse of the at least two pulses is the same. A first pulse of the at least two pulses may be applied on one side of the resistance conversion layer and a second pulse of the at least two pulses may be applied on the other side of the resistance conversion layer. The applying step may be performed during a set programming operation or a reset programming operation. A resistive memory device for programming a resistance conversion layer may include a first and second electrode, a lower structure, and the resistance conversion layer coupled between the first and second electrodes. The resistance conversion layer may be configured to receive multiple pulses, where the multiple pulses include at least two pulses having the same magnitude.
Samsung Electronics Co., Ltd.
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Seung-hoon Myung-jae Yoon-dong Young-soo
Lee Lee Park Park