Lee & Morse, P.C.
Semiconductor light emitting device
A semiconductor light emitting device includes: an n-type semiconductor layer and a p-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer disposed between the active layer and the p-type semiconductor layer and doped with a p-type dopant element. The electron blocking layer is formed of AlxGa1-xN, where 0<x≦1. A plurality of first regions blocking overflow of electrons from the active layer to the p-type semiconductor layer and a plurality of second regions formed of InN are alternately disposed within the electron blocking layer.
SAMSUNG ELECTRONICS CO., LTD.
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Jong Sun Sung Min Kyung Ho Jun Youn
Maeng Choi Yoo Kim