F. Chau & Associates, LLC
Substrate manufacturing method and substrate manufacturing apparatus
Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.
SAMSUNG ELECTRONICS CO., LTD.
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Tae-Hwa Kyung-Sun Jung Min Kangmin Heungsik Dougyong
Kim Kim Kim Jeon Park Sung