Preventing strained fin relaxation by sealing fin ends
A semiconductor structure includes a first strained fin portion and a second strained fin portion, a pair of inactive inner gate structures upon respective strained fin portions, and spacers upon outer sidewalls surfaces of the inactive inner gate structures, upon the inner sidewall surfaces of the inactive inner gate structures, and upon the first strained fin portion and the second strained fin portion end surfaces. The first strained fin portion and the second strained fin portion end surfaces are coplanar with respective inner sidewall surfaces of the inactive inner gate structures. The spacer formed upon the end surfaces limits relaxation of the first strained fin portion and the second strained fin portion and limits shorting between the first strained fin portion and the second strained fin portion.
International Business Machines Corporation
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Bruce B. Fee Li Derrick Sivananda K. Gauri Juntao Kangguo Chun Wing Hong
Doris Lie Liu Kanakasabapathy Karve Li Cheng Yeung He