Lateral diffused metal oxide semiconductor device
An exemplary lateral diffused metal oxide semiconductor device includes a first-type substrate, a gate oxide film disposed on the first-type substrate, a poly gate disposed on the gate oxide film, a first second-type slightly doped region formed in the first-type substrate and acting as a well, a first first-type highly doped region formed in the well and acting as a body, a first second-type highly doped region formed in the body and acting as a source, a second second-type highly doped region formed in the well and acting as a drain, a second first-type highly doped region formed in the body, and a first first-type doped region formed in the body and is beneath the source.
Fitipower Integrated Technology, Inc.
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inventional additional inventional additional
Chen-Ming Chyh-Yih Tsuan-Lun Hsing-Hua
Chiu Chang Lung Sun