Duane Morris LLP
Gate feature in finFET device
A semiconductor device includes a fin structure, disposed on a substrate, that horizontally extends along a direction; and a gate feature comprising a gate dielectric layer and at least a first metal gate layer overlaying the gate dielectric layer, wherein the gate dielectric layer and the first metal gate layer traverse the fin structure to overlay a central portion of the fin structure and further extend along the direction to overlay at least a side portion of the fin structure that is located outside a vertical projection of a sidewall of the gate feature.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Guan-Jie Chih-Hsiung Chia-Der
Shen Lin Chang