Morrison & Foerster LLP
Nonvolatile semiconductor memory device
A nonvolatile semiconductor memory device of the present invention includes: a first booster circuit for generating a first voltage higher than a voltage supplied by an external power source, the first booster circuit being used for writing or deleting of data; a second booster circuit for generating a second voltage higher than the voltage supplied by the external power source, the second booster being used for reading of data; a regulator for controlling the first voltage, the regulator being connected to an output terminal of the first booster circuit; and a reference voltage generator circuit for generating a reference voltage input to the regulator. The nonvolatile semiconductor memory device is characterized in that: a power source of the reference voltage generator circuit is connected via a transistor to an output terminal of the second booster circuit; and the nonvolatile semiconductor memory device includes a section for allowing the transistor to be electrically conductive immediately after a start of an operation for writing or deleting of data.
Sharp Kabushiki Kaisha
G G G G
G11C G11C G11C G11C
inventional inventional inventional inventional
Toshiji Makoto Masaru
Ishii Ihara Nawaki