Qualcomm Incorporated
MRAM word line power control scheme
Systems, circuits and methods for controlling word line (WL) power levels at a WL of a Magnetoresistive Random Access Memory (MRAM). The disclosed power control scheme uses existing read/write commands and an existing power generation module associated with the MRAM to supply and control WL power levels, thereby eliminating the cost and increased die-size of schemes that control WL power through relatively large and expensive power control switches and control circuitry on the MRAM macro.
QUALCOMM Incorporated
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Sungryul Matthew M. Manoj Jung Pill Taehyun Seung H.
Kim Nowak Bhatnagar Kim Kim Kang