Christie, Parker & Hale, LLP
Method for fabricating CuInS2 thin film by metal organic chemical vapor deposition, CuInS2 thin film fabricated by the same and method for fabricating In2S3 thin film therefrom
Disclosed is a method for fabricating a CuInS2 thin film by metal-organic chemical vapor deposition (MOCVD). The method comprises fabricating a copper thin film by depositing an asymmetric copper precursor on a substrate by MOCVD and fabricating a CuInS2 thin film by depositing an indium-sulfur-containing precursor on the copper thin film by MOCVD. The method enables fabrication of a CuInS2 thin film with a constant composition even under vacuum as well as an argon (Ar) atmosphere. Disclosed is further a CuInS2 thin film fabricated by the method. Disclosed is further a method for fabricating an In2S3 thin film for a window of a solar cell via deposition of an indium-sulfur-containing precursor on the CuInS2 thin film by MOCVD. Disclosed further is an In2S3 thin film fabricated by the method. The In2S3 thin film is useful for a substitute for CdS conventionally used for windows of solar cells and contributes to simplification in fabrication process of solar cells.
Samsung SDI Co., Ltd. Chung-Ang University Industry-Academy Cooperation Foundation Samsung Electronics Co., Ltd. Seoul National University Industry Foundation
C Y H
C23C Y02E H01L
inventional additional inventional
Seung Soo Il Wun Kook Won Jong Pil
Lee Shim Seo Park