Maschoff Brennan
CMOS image sensor structure with crosstalk improvement
A semiconductor device includes a substrate, a device layer, an anti-reflective coating layer, reflective structures, a composite grid structure, a passivation layer and color filters. The device layer is disposed on the substrate, in which trenches are formed in the device layer and the substrate. The anti-reflective coating layer conformally covers the device layer, the substrate and the trenches. The reflective structures are disposed on the anti-reflective coating layer in the trenches respectively. The composite grid structure overlies the anti-reflective coating layer and the reflective structures. The composite grid structure includes cavities passing through the composite grid structure, and the composite grid structure includes a metal grid layer and a dielectric grid layer sequentially stacked on the reflective structures. The passivation layer conformally covers the composite grid structure. The color filters respectively fill the cavities.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Yun-Wei Yung-Lung Kuo-Cheng Chun-Hao Tsung-Han
Cheng Hsu Lee Chou Tsai