Harness, Dickey & Pierce, P.L.C.
Variable resistance memory device
A variable resistance memory device includes a metal interconnection layer on a substrate, an interlayer insulating layer on the metal interconnection layer and defining a contact hole for exposing a portion of the metal interconnection layer, a barrier metal layer including a plurality of sub-barrier metal layers inside the contact hole, a plug metal layer on the barrier metal layer and burying the contact hole, and a variable resistance structure on the barrier metal layer and the plug metal layer.
Samsung Electronics Co., Ltd.
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Kyung-il Jung-hwan Ju-hyun Jung-min Dong-kyu Se-chung
Hong Park Kim Lee Lee Oh