IP & T Group LLP
Semiconductor memory device and method of manufacturing the same
A semiconductor memory device and a method of manufacturing the same are provided. The device includes a semiconductor substrate in which active regions and isolation regions are alternately defined, and a support region is defined in a direction crossing the active regions and the isolation regions, first trenches formed in the isolation regions, second trenches formed under the first trenches in the active regions and the isolation regions; and a support layer formed under the first trenches in the support region.
SK Hynix Inc.
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Yun Kyoung Jung Ryul
Lee Ahn