Fleit Intellectual Property Law
Silicon germanium fin immune to epitaxy defect
A method for forming a semiconductor structure includes forming at least one fin on a semiconductor substrate. The least one fin includes a semiconducting material. A gate is formed over and in contact with the at least one fin. A germanium comprising layer is formed over and in contact with the at least one fin. Germanium from the germanium comprising layer is diffused into the semiconducting material of the at least one fin.
International Business Machines Corporation
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Juntao Xin Kangguo
Li Miao Cheng