Withrow & Terranova, P.L.L.C.
Semiconductor devices with heterojunction barrier regions and methods of fabricating same
An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.
Cree, Inc.
Qingchun
Zhang