Harness, Dickey & Pierce, P.L.C.
Methods of manufacturing semiconductor device having recess channel array transistor
Methods of manufacturing a semiconductor device having an RCAT are provided. The method includes forming a first recess having a first depth formed in an active region of a semiconductor substrate, and a second recess having a second depth that is less than the first depth formed in an isolation layer. The depth of the second recess is decreased by removing the isolation layer from the upper surface of the isolation layer by a desired thickness. A gate dielectric layer is formed on an inner wall of the first recess and a gate is formed on the gate dielectric layer.
Samsung Electronics Co., Ltd.
H H H H H
H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional
Gil-sub Nam-jung Yun-sung Yong-il Jong-seop Jai-kyun
Kim Kang Lee Kim Lee Park