Tung & Associates
Single trench alternating phase shift mask fabrication
The invention relates to fabricating a single-trench alternating phase shift mask (PSM). A chromium layer over a mask layer, which is itself over a quartz layer, of the PSM is patterned according to a semiconductor design. The mask layer and the quartz layer are dry etched through a photoresist layer that has been applied over the chromium layer and patterned according to an alternating PSM design. The dry etching initially forms single trenches of the PSM. The quartz layer is next wet etched through the mask layer to completely form the single trenches of the PSM, where the photoresist layer has first been removed. The mask layer is dry etched again, where the single trenches of the PSM are initially filled with filler material to protect the single trenches from the dry etching.
Taiwan Semiconductor Manufacturing Co. Ltd
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inventional inventional additional inventional inventional
Chung-Hsing Chen-Hao Chang-Ming San-De
Chang Hsieh Dai Tzu