Method of making planarized, self-aligned bipolar integrated circuits
 A method for making a bipolar integrated circuit structure in a semiconductor substrate. A layer of insulating material having an implantation opening is formed on the upper surface of the semiconductor substrate. A polysilicon layer is formed in the implantation opening. A doping material is implanted into the polysilicon-filled opening. The doping material is diffused into the substrate material from the polysilicon-filled opening. 
Honeywell Inc.
H H
H01L H01L
inventional inventional
Huang-Joung Michael S.
Chen Liu