F. Chau & Associates, LLC
Photoresist composition and method of forming pattern using the same
Disclosed is a photoresist composition having a good sensitivity and residual layer characteristic and a method of forming a pattern using the same. The photoresist composition includes 5-30% by weight of a polymer resin, 2-10% by weight of a photosensitive compound, 0.1-10% by weight of a sensitivity enhancing agent, 0.1-10% by weight of a sensitivity restraining agent and 60-90% by weight of an organic solvent. A photoresist layer is formed by coating the photoresist composition on a substrate and then drying the coated photoresist composition. Then, thus obtained photoresist layer is exposed by using a mask having a predetermined pattern. Then, a photoresist pattern is formed by developing thus exposed photoresist layer. The photoresist pattern exhibits a uniform layer thickness and critical dimension.
Samsung Electronics Co., Ltd.
G G G
G03F G03F G03F
inventional inventional inventional
Sung-Chul Seung-Uk Hoon You-Kyoung Dong-Ki Jin-Ho
Kang Lee Kang Lee Lee Ju