The Marbury Law Group PLLC
Three-dimensional memory device having a multilevel drain select gate electrode and method of making thereof
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate and memory stack structures extending through the alternating stack. Each memory stack structure includes a memory film and a vertical semiconductor channel. An isolation trench laterally extends along a horizontal direction and divides at least two topmost electrically conductive layers. Two conductive rail structures are located on lengthwise sidewalls of the isolation trench and are electrically shorted to respective segments of the at least two topmost electrically conductive layers.
SANDISK TECHNOLOGIES LLC
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inventional inventional additional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Murshed Jin Yanli Johann Raghuveer S.
Chowdhury Liu Zhang Alsmeier Makala