The Farrell Law Firm, P.C.
Method of forming isolation dielectrics for stacked field effect transistors (FETs)
A method of forming a stacked field effect transistor (FET) circuit is provided. The method includes providing a first wafer and a second wafer, forming a first dielectric layer on a surface of the first wafer, forming a second dielectric layer on a surface of the second wafer, and bonding the first wafer to the second wafer at the first dielectric layer and the second dielectric layer.
Samsung Electronics Co., Ltd
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Vassilios Mark Wei-E
Gerousis Rodder Wang