Rossi, Kimms & McDowell LLP
Semiconductor device, integrated circuit including the semiconductor device, control IC for switching power supply and the switching power supply
A semiconductor device incorporates a resistor on a structure that uses diffusion layers for sustaining the breakdown voltage thereof to realizes a very resistive element that exhibits a high breakdown voltage and high electrical resistance, includes a spiral very resistive element buried in an interlayer insulator film. A first end of the very resistive element is connected to a drain electrode wiring and the second end of the very resistive element is grounded. An intermediate point of the very resistive element is connected to ae voltage comparator of a control IC. The semiconductor device according to the invention facilitates reducing the components parts costs, assembly costs and size of a switching power supply that includes a very resistive element.
Fuji Electric Co., Ltd.
H H H H H
H01L H01L H01L H01L H02M
inventional additional inventional inventional inventional
Masaru
Saito