Eschweiler & Potashnik, LLC
Method to effectively suppress heat dissipation in PCRAM devices
In some embodiments, the present disclosure relates to an integrated chip including a phase change material disposed over a bottom electrode and configured to change from a crystalline structure to an amorphous structure upon temperature changes. A top electrode is disposed over an upper surface of the phase change material. A via electrically contacts a top surface of the top electrode. Further, a maximum width of the upper surface of the phase change material is less than a maximum width of a bottom surface of the phase change material.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Tung Ying Jui-Ming Shao-Ming Yu Chao Yu-Sheng
Lee Chen Yu Lin Chen