Marger Johnson & McCollom, P.C.
Semiconductor memory device having redundancy circuit capable of improving redundancy efficiency
A redundancy circuit is used to repair a normal column containing a defective normal memory cell. The redundancy circuit comprises a redundancy column containing redundancy memory cells and a plurality of programmable decoders. When any one of the plurality of programmable decoders enters a repair mode, a column pre-decoder for selecting a column containing a normal memory cell is disabled. Each of the programmable decoders can be configured to replace a column containing a defective normal memory cell in a single memory bank or a single memory bank group with a redundancy column. Since a defective column is replaced with a redundancy column in individual banks or bank groups, redundancy efficiency is greatly improved by allowing multiple normal columns containing defective cells to be replaced using a single redundancy column.
Samsung Electronics Co., Ltd.
G G
G11C G11C
inventional inventional
Hyung-dong Hi-choon Seung-hoon
Kim Lee Lee