Leydig Voit and Mayer
Single-crystal 4H-SiC substrate
A single-crystal 4H-SiC substrate includes a 4H-SiC bulk single-crystal substrate; and an epitaxial first single-crystal 4H-SiC layer on the 4H-SiC bulk single-crystal substrate and having recesses. The recesses have a diameter no smaller than 2 μm and no larger than 20 μm. The recesses have a depth no smaller than 0.01 μm and no larger than 0.1 μm. A single-crystal 4H-SiC substrate also includes a 4H-SiC bulk single-crystal substrate; and an epitaxial first single-crystal 4H-SiC layer on the 4H-SiC bulk single-crystal substrate and having recesses. The density of the recesses in the epitaxial first single-crystal 4H-SiC layer is at least 10/cm2, and the epitaxial first single-crystal 4H-SiC layer has a defect density no larger than 2/cm2.
Mitsubishi Electric Corporation
C Y Y C C
C30B Y10T Y10T C30B C30B
inventional additional additional inventional inventional
Kenichi Akihito Yoichiro Zempei Takanori Nobuyuki
Hamano Ohno Mitani Kawazu Tanaka Tomita