Pollock, Vande Sande and Priddy
Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium
 In an active matrix structure for liquid crystal display elements which includes pixel electrodes arranged in a matrix form on a glass base plate, thin film transistors having their drains connected to the pixel electrodes, respectively, data lines each connected to sources of the thin film transistors of one column and gate lines connected to gates of the thin film transistors of one row, there are provided in the same plane a light blocking layer disposed opposite each of the thin film transistors across an insulating layer, a storage capacitance electrode disposed partly opposite each of the pixel electrodes across the insulating layer and storage capacitance lines for interconnecting the capacitance electrodes. The light blocking layers, the storage capacitance electrodes and the storage capacitance lines are formed of the same material and at the same time. 
Nippon Telegraph and Telephone Corporation Hosiden Corporation
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Kiyoshi Nobuhiko Kinya Yasuhiro Shigeo Tsutomu Tadamichi Hiroshi Takanobu Tomihisa Masamichi
Taruta Kakuda Kato Ukai Aoki Wada Kawada Saito Nakagawa Sunata Okamura