Haynes and Boone, LLP
Semiconductor method of protecting wafer from bevel contamination
The present disclosure provides a method that includes coating an edge portion of a wafer by a first chemical solution including a chemical mixture of an acid-labile group, a solubility control unit and a thermal acid generator; curing the first chemical solution to form a first protecting layer on the edge portion of the wafer; coating a resist layer on a front surface of the wafer; removing the first protecting layer by a first removing solution; and performing an exposing process to the resist layer.
TAIWAIN SEMICONDUCTOR MANUFACTURING CO., LTD.
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Chin-Hsiang Ching-Yu Joy An-Ren
Lin Chang Cheng Zi