Semiconductor device employing fin-type gate and method for manufacturing the same
A semiconductor device comprises an active region having an upper portion and a sidewall portion which are protruded from the top surface of a device isolation region, and a silicide film disposed in the upper portion and the sidewall portion of the active region, thereby effectively reducing resistance in a source/drain region of the semiconductor device. As a result, the entire resistance of the semiconductor device comprising a fin-type gate can be reduced to improve characteristics of the semiconductor device.
Hynix Semiconductor Inc
H H H H H
H01L H01L H01L H01L H01L
additional inventional inventional inventional inventional
Seung Hyun
Lee