Fliesler, Dubb, Meyer & Lovejoy
Reduced column leakage during programming for a flash memory array
 A method for programing a cell in an array of flash memory cells connected to a bit line using hot-electron injection. In the method, a negative word line voltage is applied to unselected cells connected to the bit line to create a negative gate to source voltage in the unselected cells. The negative gate to source voltage in the unselected cells is provided to prevent overerased cells, or cells which have a negative threshold, from turning on to reduce bit line leakage current. 
Advanced Micro Devices, Inc.
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Lee E. Shane C. Nader Jian
Cleveland Hollmer Radjy Chen