Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Method of manufacturing an insulating film containing hafnium
A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.
Semiconductor Technology Academic Research Center
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Haruhiko Koji Ziyuan Masaki Masaharu Kazuto Liu
Takahashi Usuda Liu Yoshimaru Oshima Ikeda Guo-lin