Oblon, Spivak, McClelland, Maier, & Neustadt
Method of manufacturing silicon oxide film containing fluorine
 Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below: EQU P.gtoreq.5.times.10.sup.-4,P.ltoreq.10.sup.-1 .times.10.sup.-E/45(A) and the relationship between the ion energy E (ev) and the plasma density D (/cm.sup.3) satisfies the formula B given below: EQU D.gtoreq.2.times.10.sup.11 .times.10.sup.-E/45, 10.ltoreq.E(B) 
Kabushiki Kaisha Toshiba
H H H H H H H H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L H01L
additional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Haruo Rempei Yukio Akemi Nobuo Riichirou Masao Hitoshi Takahito
Okano Nakata Nishiyama Satoh Hayasaka Aoki Toyosaki Ito Nagamatsu