Tutunjian & Bitetto, P.C.
Vertical metal-air transistor
A method of forming a vertical metal-air transistor device is provided. The method includes forming a precursor stack with a stack template on the precursor stack on a substrate. The method further includes forming a bottom spacer on the substrate around the precursor stack, and depositing a liner casing on the precursor stack. The method further includes depositing a conductive gate layer on the bottom spacer and liner casing. The method further includes reducing the size of the stack template to form a template post on the precursor stack, and forming a stack cap on the template post and precursor stack.
INTERNATIONAL BUSINESS MACHINES CORPORATION
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Ruilong Juntao Kangguo Chanro
Xie Li Cheng Park