Birch, Stewart, Kolasch & Birch, LLP
Method for forming semiconductor structure
A method for forming a semiconductor device structure is provided. The method includes forming an assist layer over a material layer. The assist layer includes a first polymer with a first polymer backbone, a floating group bonded to the first polymer backbone, and the floating group includes carbon fluoride (CxFy), and a second polymer. The method includes forming a resist layer over the assist layer, and the first polymer is closer to an interface between the assist layer and the resist layer than the second polymer. The method also includes patterning the resist layer.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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An-Ren Chin-Hsiang Ching-Yu
Zi Lin Chang