Anova Law Group, PLLC
Electrostatic discharge protection circuit and electronic device thereof
An electrostatic discharge protection circuit and a semiconductor device are provided. The circuit includes: a power source terminal, a ground terminal, and a discharge path. The discharge path includes a clamp transistor and a MOS transistor connected in series and integrated into a same semiconductor substrate with different types. For the MOS transistor, a gate electrode is electrically connected to a substrate terminal; a first electrode is one of a source electrode and a drain electrode; a second electrode is another one of the source electrode and the drain electrode; the first electrode is electrically connected to a gate electrode of the clamp transistor; and the second electrode is electrically connected to the ground terminal. When an electrostatic discharge occurs, the MOS transistor is turned on to form parasitic current between a substrate terminal of the clamp transistor and the second electrode of the MOS transistor.
Semiconductor Manufacturing International (Beijing) Corporation Semiconductor Manufacturing International (Shanghai) Corporation
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H01L H01L H03K H02H H01L H01L H01L
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Jie Guang
Chen Chen