Arch & Lake LLP
Pressure sensing unit and pressure sensor, pressure sensing device
A pressure sensing unit includes: a first substrate and a second substrate opposite to each other; and at least one vertical thin film transistor disposed between the first substrate and the second substrate. Each vertical thin film transistor includes a first electrode, a semiconductor active layer, a second electrode, at least one insulating support, and a gate electrode sequentially disposed in a direction extending from the first substrate to the second substrate. A first air gap is formed by the presence of the at least one insulating support between the gate electrode and the second electrode of each vertical thin film transistor.
BOE Technology Group Co., Ltd. Hefei Xinsheng Optoelectronics Technology Co., Ltd.
G G H H G G
G06F G01L H01L H01L G01L G01L
inventional additional inventional inventional additional inventional
Qinghe Dongfang Leilei Guangyao Yang Tongshang Bin Ce
Wang Wang Cheng Li Zhang Su Zhou Zhao