F. Chau & Associates, LLC
Method for fabricating semiconductor device
A method for fabricating a semiconductor device is provided. An ion implantation mask exposing a portion of a semiconductor substrate is formed on the semiconductor substrate. The implantation mask includes a second hardmask layer having a first thickness and a second hardmask layer having a second thickness. The first hardmask layer is disposed between the second hardmask layer and the semiconductor substrate. An ion implantation process is performed on the exposed portion of the semiconductor substrate using the implantation mask. The implantation mask is removed without forming an etch mask layer on the exposed portion of the semiconductor substrate.
Samsung Electronics Co., Ltd.
H
H01L
inventional
Suk-Hun Chan-Sam
Choi Chang