Slater & Matsil, L.L.P.
Germanium FinFETs having dielectric punch-through stoppers
A method of forming a semiconductor structure includes providing a composite substrate, which includes a bulk silicon substrate and a silicon germanium (SiGe) layer over and adjoining the bulk silicon substrate. A first condensation is performed to the SiGe layer to form a condensed SiGe layer, so that the condensed SiGe layer has a substantially uniform germanium concentration. The condensed SiGe layer and a top portion of the bulk silicon substrate are etched to form a composite fin including a silicon fin and a condensed SiGe fin over the silicon fine. The method further includes oxidizing a portion of the silicon fin; and performing a second condensation to the condensed SiGe fin.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chen-Yi Chen-Nan Chen-Hua Yu-Rung Shih-Ting Cheng-Hung
Lee Yeh Yu Hsu Hung Chang