TFT backplane and manufacturing method thereof
The invention provides a TFT backplane structure and manufacturing method thereof. The TFT backplane structure uses the three-layered structure, from bottom up, dielectric layer (41), SiNx layer (42), and SiO2 layer (43), for the gate insulating layer (4) corresponding to the location of the TFT (T), to enhance the TFT reliability; uses a double-layered gate insulating layer (4), from bottom up, the dielectric layer (41), and at least a portion of SiNx layer (42), at the location corresponding to the storage capacitor (C), or a single-layered gate insulating layer (4), i.e., the dielectric layer (4), at the location corresponding to the storage capacitor (C), the dielectric constant can be increased, the distance between the two storage capacitor electrode plates is reduced, resulting in reducing the capacitor area and improve aperture ratio on the premise of storage capacitance performance.
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
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Xingyu
Zhou