Hoffman Warnick LLC
Method of manufacturing scaled equivalent oxide thickness gate stacks in semiconductor devices and related design structure
A method of forming a semiconductor device is disclosed. The method includes: forming a dielectric region on a substrate; annealing the dielectric region in an environment including ammonia (NH3); monitoring a nitrogen peak of at least one of the substrate and the dielectric region during the annealing; and adjusting a parameter of the environment based on the monitoring of the nitrogen peak.
International Business Machines Corporation
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Paul A. Joseph F. Jinping Min Shahab Michael P.
Ronsheim Shepard, Jr. Liu Dai Siddiqui Chudzik