Burns, Doane, Swecker & Mathis
Interconnect structure in semiconductor device and method for making the same
 An interconnect structure in a semiconductor device has a metal layer of an Au type formed at a contact hole region on an electrode or a resistor element containing tungsten (W) and an interconnect connected with the electrode or the resistor element through the metal layer. Since the metal layer of a compound such as Au which has selectivity in terms of etching rate is formed as an etching-stop layer in the contact hole region of such as WSiN or WSi which has no etching selectivity with respect to an interlayer insulating film of SiO.sub.2, it is possible to form contact holes on the resistor elements of WSiN or the electrodes of WSi simultaneously with those on other electrodes containing Au and to prevent the resistor elements of WSiN or the electrodes of WSi from being etched through. 
NEC Corporation
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inventional additional inventional
Yasuyuki
Suzuki