Patterson + Sheridan LLP
High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials
Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.
APPLIED MATERIALS, INC.
H H
H01L H01L
inventional additional
Bok Hoen Prashant Kwangduk Douglas Juan Carlos Ganesh Jian J. Swayambhu Prasad Zheng John
Kim Kulshreshtha Lee Rocha-Alvarez Balasubramanian Chen Behera Ye