Cushman, Darby & Cushman
Solid state image sensing device with photodiode to reduce smearing
 In a solid state image sensing device of P-conductivity type well, photo-electro converting region (1) are configured to have a larger area as the depth increases, so that excessive electric charges generated in the p-conductivity type well are easily transferred from expanded peripheral parts (7) at the bottom (1b) to channel (3), without being undesirably transferred downward through thin p-conductivity type region 6 to substrate (4), and smear electric charges which has been generated in a thin p-conductivity type well under the photo-electro converting region in the conventional device is suppressed, to effectively decrease the smear phenomenon. 
Matsushita Electronics Corporation
H H
H01L H01L
inventional inventional
Toshihiro Hiroyuki Kenju Takao
Kuriyama Mizuno Horii Kuroda