Myers Bigel Sibley & Sajovec
Flash memory devices, methods for programming the same, and memory systems including the same
A programming method of a nonvolatile memory device is provided including: applying a local voltage to a first unselected word line; applying a local voltage to a second unselected word line, after the local voltage is applied to the first unselected word line; and applying a pass voltage to the first unselected word line, after the local voltage is applied to the second unselected word line. Related devices and systems are also provided herein.
Samsung Electronics Co., Ltd.
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inventional inventional inventional inventional
Hyunjae Jae Ho Jungdal Hyun-Sil
Kim Kim Choi Oh