Schmeiser, Olsen & Watts
Equal spacer formation on semiconductor device
A method for fabricating a semiconductor device having a uniform spacer thickness between field-effect transistors (FETs) associated with regions of the device is provided. A first semiconductor material is epitaxially grown in a first source/drain region within a first region of the device associated with a first FET. A capping layer is selectively formed on the first semiconductor material by forming a layer over the first and second regions that reacts with the first semiconductor material to form the capping layer. A second semiconductor material is epitaxially grown in a second source/drain region within a second region of the device associated with a second FET. The capping layer caps the growth of the first semiconductor material during the epitaxial growth of the second semiconductor material to provide the uniform spacer thickness between the first and second FETs.
International Business Machines Corporation
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Juntao Heng Kangguo Peng Choonghyun
Li Wu Cheng Xu Lee