Cantor Colburn LLP
Stress enhanced junction engineering for latchup SCR
A method of forming an IC device including a latchup silicon controlled rectifier (SCR) includes forming a mask on a top surface of a substrate, wherein the mask covers a first portion of the substrate and exposes a second portion of the substrate that is located in one of an n-well and a p-well on the substrate; etching the exposed second portion of the substrate to form an etched area; forming a stress engineered junction of the latchup SCR by selective epitaxial deposition in the etched area; and removing the mask.
International Business Machines Corporation
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Rahul Robert J. Junjun John B.
Mishra Gauthier, Jr. Li Campi, Jr.