Bacon & Thomas, PLLC
Plasma processing device
The invention provides a plasma processing device, wherein the upper electrode and the lower electrode are in the vacuum chamber. The chip is placed in the lower electrode. The first plate is placed between the upper electrode and the lower electrode, and the first plate includes a plurality of first voids. The second plate is placed between the first plate and the lower electrode, and the second plate includes a plurality of second voids. The high frequency power is provided by the upper electrode and the lower electrode in the vacuum chamber, and the plasma is generated between the third plate and the upper electrode. The plasma is filtered by the third void, the first void, and the second void.
CHANG GUNG UNIVERSITY
H H H C H H
H01J H01J H01J C23C H01J H01J
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Chi-Hsien Chao-Sung Chien Chu-Fa
Huang Lai Chou Chan