Haynes and Boone, LLP
Structure and method for transistor with line end extension
The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate; an isolation feature formed in the semiconductor substrate; a first active region and a second active region formed in the semiconductor substrate, wherein the first and second active regions extend in a first direction and are separated from each other by the isolation feature; and a dummy gate disposed on the isolation feature, wherein the dummy gate extends in the first direction to the first active region from one side and to the second active region from another side.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Kai-Tai Chang-Yun Hsin-Chih Kuei-Liang Chih-Hao Yi-Tang Ming-Feng Shao-Ming
Chang Chang Chen Lu Chang Lin Shieh Yu