Haynes and Boone, LLP
Varied STI liners for isolation structures in image sensing devices
An integrated circuit device incorporating a plurality of isolation trench structures configured for disparate applications and a method of forming the integrated circuit are disclosed. In an exemplary embodiment, a substrate having a first region and a second region is received. A first isolation trench is formed in the first region, and a second isolation trench is formed in the second region. A first liner layer is formed in the first isolation trench, and a second liner layer is formed in the second isolation trench. The second liner layer has a physical characteristic that is different from a corresponding physical characteristic of the first liner layer. An implantation procedure is performed on the second isolation trench and the second liner layer formed therein. The physical characteristic of the second liner layer may be selected to enhance an implantation depth or an implantation uniformity compared to the first liner layer.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Jiech-Fun Feng-Chi Shih Pei Yeur-Luen Cheng-Hsien Min-Feng Chia-Shiung
Lu Hung Chou Tu Chou Kao Tsai