Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Ferromagnetic tunnel junction, magnetoresistive element and magnetic head
 This invention is directed to a ferromagnetic tunnel junction, an MR element and a magnetic head. A ferromagnetic tunnel junction is constituted by sequentially laminating a first ferromagnetic film, an insulating film and a second ferromagnetic film. These are laminated on an appropriate insulating substrate. The present invention is characterized in that the barrier potential of the insulating film is set within a range of 0.5 to 3 eV. A ferromagnetic tunnel junction with which a high MR ratio can be achieved with good reproduction characteristics is provided. 
TDK Corporation
G H
G11B H01L
inventional inventional
Satoru Masashi Kiyoshi Taro Manabu
Araki Sano Noguchi Oike Ohta