The Marbury Law Group, PLLC
Metallic magnetic memory devices for cryogenic operation and methods of operating the same
A MRAM device includes a spin valve containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic metallic barrier layer located between the reference layer and the free layer, a metallic assist structure configured to provide rotating spin transfer torque to the free layer to assist the free layer switching during programming, and a first nonmagnetic metallic spacer layer located between the free layer and the metallic assist structure.
SANDISK TECHNOLOGIES LLC
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Michael Zhanjie Paul Quang Zhigang
Ho Li Vanderheijden Le Bai