Haynes and Boone, LLP
Method of forming a fin field effect transistor comprising two etching steps to define a fin structure
An exemplary method of forming a fin field effect transistor that includes first and second etching processes to form a fin structure. The fin structure includes an upper portion and a lower portion separated at a transition. The upper portion has sidewalls that are substantially perpendicular to the major surface of the substrate. The lower portion has tapered sidewalls on opposite sides of the upper portion and a base having a second width larger than the first width.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chang-Yun Hung-Ming Clement Hsingjen Feng Tsung-Lin
Chang Chen Wann Yuan Lee