Jianq Chyun IP Office
Electrode structure of memory capacitor
After a fabrication process intended to miniaturize semiconductor devices, a surface area of a stack capacitor in a random access memory (RAM) is significantly reduced and capacity thereof is thus decreased, which in turn causes the capacitor not able to function properly. The present invention provides a composite lower electrode structure consisting of an exterior annular pipe and a central pillar having concave-convex surfaces to increase a surface area of the capacitor within a limited memory cell so as to enhance the capacity. To reinforce intensity of a structure of the capacitor, the exterior annular pipe has an elliptic radial cross section and a thicker thickness along a short axis direction.
Industrial Technology Research Institute
H H H
H01L H01L H01L
inventional inventional inventional
Yun-Chiao Su-Tsai Wen-Hwa Hsien-Chie
Chen Lu Chen Cheng