Eschweiler & Potashnik, LLC
Back-side illuminated (BSI) image sensor with global shutter scheme
In some embodiments, the present disclosure relates to a back-side image (BSI) sensor having a global shutter pixel with a reflective material that prevents contamination of a pixel-level memory node. In some embodiments, the BSI image sensor has an image sensing element arranged within a semiconductor substrate and a pixel-level memory node arranged within the semiconductor substrate at a location laterally offset from the image sensing element. A reflective material is also arranged within the semiconductor substrate at a location between the pixel-level memory node and a back-side of the semiconductor substrate. The reflective material has an aperture that overlies the image sensing element. The reflective material allows incident radiation to reach the image sensing element while preventing the incident radiation from reaching the pixel-level memory node, thereby preventing contamination of the pixel-level memory node.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Shyh-Fann Dun-Nian Ching-Chun Wei Chuang Yen-Ting Kuan-Tsun Chun-Yuan
Ting Yaung Wang Wu Chiang Chen Chen