McDonnell Boehnen Hulbert & Berghoff LLP
Dual channel FinFET CMOS device with common strain-relaxed buffer and method for manufacturing thereof
A CMOS semiconductor FinFET device and a method for manufacturing a CMOS semiconductor FinFET device are disclosed. The device may comprise an nFinFET and a pFinFET having a channel region comprising Ge on a common strain-relaxed buffer layer comprising SiGe. The concentration of Ge in the channel regions is higher than the concentration of Ge in the strain-relaxed buffer layer. The device further comprises a source/drain region for the nFinFET, the source/drain region comprising SiGe; and a source/drain region for the pFinFET, the second source/drain region comprising Ge.
IMEC VZW Samsung Electronics Co. Ltd.
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Geert Seung Hun
Eneman Lee