Lee IP Law, P.C.
Semiconductor device having multi-thickness nanowire
A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
SAMSUNG ELECTRONICS CO., LTD.
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Dong Woo Seung Hun Sun Jung Dong Chan
Kim Lee Kim Suh