MH2 Technology Law Group LLP
Growth of cubic crystalline phase strucure on silicon substrates and devices comprising the cubic crystalline phase structure
A semiconductor device is disclosed. The semiconductor device includes a substrate comprising a groove. A buffer layer is formed on a surface of the groove. The buffer layer comprising at least one material chosen from AIN, GaN or AlxGa1-xN, where x is between zero and one. An epitaxially grown semiconductor material is disposed over the buffer layer, at least a portion of the epitaxially grown semiconductor material having a cubic crystalline phase structure. Methods of forming the semiconductor devices are also taught.
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Christian Christoph Steven R. J. Seung-Chang Theeradetch
Wetzel Stark Brueck Lee Detchprohm