Posz Law Group, PLC
High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof
A semiconductor device includes a T-gate disposed between drain and source regions and above a barrier layer to form a Schottky contact to the channel layer. A first inactive field mitigating plate is disposed above a portion of the T-gate and a second active field plate is disposed above the barrier layer and in a vicinity of the T-gate.
Northrop Grumman Systems Corporation
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Po-Hsin Roger Ioulia Robert Carol
Liu Tsai Smorchkova Coffie Namba