Haynes and Boone, LLP
Method and system for exposure of a phase shift mask
The present disclosure provides a method of making a mask. The method includes providing a substrate having a first attenuating layer on the substrate and a first imaging layer on the first attenuating layer; performing a first exposure to the first imaging layer using a first radiation energy in writing mode; performing a first etching to the first attenuating layer; performing a second etching to the substrate; forming a second imaging layer on the first attenuating layer and the substrate; performing a second exposure to the second imaging layer using a light energy and another mask; and performing a third etching to the first attenuating layer after the second exposure.
Taiwan Semiconductor Manufacturing Company, Ltd.
G
G03F
inventional
Ming-Tao Chih-Ming Ya-Ping
Ho Chen Tseng