Stanzione & Kim, LLP
Nonvolatile memory device and method of manufacturing the same
A nonvolatile memory device and method of manufacturing the same are provided. In the nonvolatile memory device, a blocking insulation layer is provided between a trap insulation layer and a gate electrode. A fixed charge layer spaced apart from the gate electrode is provided in the blocking insulation layer. Accordingly, the reliability of the nonvolatile memory device is improved.
SAMSUNG Electronics Co., Ltd.
H H G H H H H H H G H
H01L H01L G11C H01L H01L H01L H01L H01L H01L G11C H01L
inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional inventional
Changseok Jungdal Sung-il
Kang Choi Chang