Murphy, Bilak & Homiller, PLLC
Semiconductor device having integrated diodes
A semiconductor device includes a semiconductor substrate and a power transistor having a plurality of transistor cells. Each transistor cell includes: a gate trench structure formed in the semiconductor substrate and circumscribing the transistor cell; a needle-shaped field electrode trench structure formed in the semiconductor substrate and spaced inward from the gate trench structure; a source region of a first conductivity type formed in the semiconductor substrate adjacent the gate trench structure; a body region of a second conductivity type opposite the first conductivity type formed in the semiconductor substrate below the source region; and a drift zone of the first conductivity type formed in the semiconductor substrate below the body region. The semiconductor device further includes a plurality of MOS-gated diodes or Schottky diodes, each diode formed in a non-active area of the power transistor between adjacent ones of the transistor cells. Corresponding methods of manufacture are also described.
Infineon Technologies Austria AG
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Jian Yan
Liu Gao