Haynes and Boone, LLP
Method and apparatus for electrochemical plating semiconductor wafers
A method of electroplating conductive material on semiconductor wafers controls undesirable surface defects by reducing the electroplating current as the wafer is being initially immersed in a plating bath. Further defect reduction and improved bottom up plating of vias is achieved by applying a static charge on the wafer before it is immersed in the bath, in order to enhance bath accelerators used to control the plating rate. The static charge is applied to the wafer using a supplemental electrode disposed outside the plating bath.
Taiwan Semiconductor Manufacturing Company, Ltd.
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C25D C25D H01L C25D H01L C25D
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Chung-Liang Shau-Lin
Chang Shue