Myers Bigel Sibley & Sajovec
Plasma enhanced chemical vapor deposition methods of forming hemispherical grained silicon layers
 A method of forming a microelectronic device includes the step of forming an impurity doped amorphous silicon layer on a microelectronic substrate using plasma-enhanced chemical vapor deposition. The impurity doped amorphous silicon layer is patterned so that portions of the microelectronic substrate are exposed adjacent the patterned amorphous silicon layer. A hemispherical grained silicon layer is then formed on the patterned amorphous silicon layer. Moreover, the step of forming the impurity doped amorphous silicon layer can be performed at a temperature of 400.degree. C. or less. 
Samsung Electronics Co., Ltd.
C
C23C
inventional
Young-wook Seung-hwan Sang-hyeop Young-sun Mikio
Park Lee Lee Kim Takagi