Sughrue Mion, PLLC
Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device is provided, and the method may include: preparing a semiconductor substrate constituted of a group III nitride semiconductor, a main surface of the semiconductor substrate being a c-plane; forming a grove on the main surface by dry dry-etching the main surface; and wet-etching an inner surface of the groove using an etchant to expose the c-plane of the semiconductor substrate in a wet-etched region, the etching having an etching rate to the c-plane of the semiconductor substrate that is lower than the etching rate to a plane other than the c-plane of the semiconductor substrate.
DENSO CORPORATION
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Hideya Narumasa Toru Tomohiko
Yamadera Soejima Ikeda Mori