Young & Thompson
Semiconductor device including capacitorless RAM
There is provided a semiconductor device including a capacitorless RAM. The semiconductor device includes a field effect transistor (FET) having a floating body structure. FET includes a channel body region arranged in a first region comprising a first semiconductor (e.g., p-SiGe) having a given band gap and a second region comprising a second semiconductor (e.g., n-Si) having a larger band gap than the first semiconductor.
Elpida Memory, Inc
G H G H G H G G
G11C H01L G11C H01L G11C H01L G11C G11C
additional inventional additional inventional additional inventional additional additional
Masayoshi
Saito