Fish & Richardson P.C.
Semiconductor device and electronic device
A first field-effect transistor provided over a substrate in which an insulating region is provided over a first semiconductor region and a second semiconductor region is provided over the insulating region; an insulating layer provided over the substrate; a second field-effect transistor that is provided one flat surface of the insulating layer and includes an oxide semiconductor layer; and a control terminal are provided. The control terminal is formed in the same step as a source and a drain of the second field-effect transistor, and a voltage for controlling a threshold voltage of the first field-effect transistor is supplied to the control terminal.
Semiconductor Energy Laboratory Co., Ltd.
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Hiroyuki Masashi Hidetomo Yutaka
Tomatsu Fujita Kobayashi Shionoiri