Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Solid state imaging device having a photodiode and a MOSFET and method of manufacturing the same
A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.
Kabushiki Kaisha Toshiba
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Ikuko Hidetoshi Hirofumi
Inoue Nozaki Yamashita