Method for planarizing semiconductor device
A method for planarizing a semiconductor device includes steps herein. A substrate is provided, on which a stop layer is formed. A trench is formed in the substrate. A first semiconductor film is deposited conformally on the stop layer and the trench. A second semiconductor film is deposited to fill the trench and cover the first semiconductor film. A chemical-mechanical polishing process is performed until the stop layer is exposed. A removal rate of the chemical-mechanical polishing process on the first semiconductor film is higher than that on the second semiconductor film. The first dielectric layer on the substrate selectively is removed.
UNITED MICROELECTRONICS CORPORATION
H H H H H H H H
H01L H01L H01L H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional inventional inventional inventional
Wei-Nan Tzu-Yi Jiann-Shiun
Fang Chuang Chen