Goodwin Procter LLP
Multi-state memory and method for manufacturing the same
A multi-state memory and a method for manufacturing the same. A magnetoresistive tunnel junction is disposed on a spin-orbit coupling layer, and thermal annealing is performed after dopant ions are injected from a side of the magnetoresistive tunnel junction. The concentration of dopant ions in the magnetoresistive tunnel junction has a gradient variation along the direction that is perpendicular to the direction of the current and within the plane in which the spin-orbit coupling layer is located. Symmetry along the direction perpendicular to the direction of the current is broken. In a case a current flows into the spin-orbit coupling layer, resistance are outputted in multiple states in linearity with the current. The multi-state storage is achieved. It can meet a requirement on hardware of neural network synapses, and is applicable to calculation in a neural network.
Institute of Microelectronics, Chinese Academy of Sciences
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Jing Sumei Tianchun Jun Wenwu Junfeng Yan Yanru Meiyin
Xu Wang Ye Luo Wang Li Cui Li Yang