Haynes and Boone, LLP
Back side illuminated image sensor with reduced sidewall-induced leakage
Provided is a method of fabricating an image sensor device. An exemplary includes forming a plurality of radiation-sensing regions in a substrate. The substrate has a front surface, a back surface, and a sidewall that extends from the front surface to the back surface. The exemplary method further includes forming an interconnect structure over the front surface of the substrate, removing a portion of the substrate to expose a metal interconnect layer of the interconnect structure, and forming a bonding pad on the interconnect structure in a manner so that the bonding pad is electrically coupled to the exposed metal interconnect layer and separated from the sidewall of the substrate.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Hsiao-Hui Dun-Nian Jen-Cheng Wen-De Shuang-Ji
Tseng Yaung Liu Wang Tsai