Birch, Stewart, Kolasch & Birch, LLP
Methods of fabricating semiconductor devices having air-gap spacers
Methods of fabricating semiconductor devices are provided. The method includes forming a gate structure over a substrate, forming a disposable spacer on a sidewall of the gate structure, and forming a source region and a drain region at opposite sides of the gate structure. The method also includes depositing an interlayer dielectric layer around the disposable spacer, and forming a first hard mask on the interlayer dielectric layer. The method further includes removing an upper portion of the gate structure, and removing the disposable spacer to form a trench between the gate structure and the interlayer dielectric layer. In addition, the method includes sealing the trench to form an air-gap spacer, and forming a second hard mask on the gate structure.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Chih-Chao Pei-Hsun Chih-Hao Chia-Hao Chun-Hsiung
Chou Wang Wang Chang Lin