Nath & Associates
Method for forming field oxide film in semiconductor device
 A method for forming field oxide films in a semiconductor device, characterized by treating a trench mask and a trench oxide to make their surfaces positively charged so that an ozone-TEOS USG film might be deposited at a rapid rate on the trench oxide but at slow rate on the trench mask, whereby production yield can be significantly improved. 
Hyundai Electronics Industries Co., Ltd.
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inventional inventional inventional
Seung Moo Sung Ku
Lee Kwon