Wayne & Ken, LLC
High-speed superjunction lateral insulated gate bipolar transistor
The present disclosure relates to a high-speed superjunction lateral insulated gate bipolar transistor, and belongs to the technical field of semiconductor power devices. Fast turn-off can be achieved by replacing the lightly doped substrate of the existing bulk silicon superjunction lateral insulated gate bipolar transistor with heavily doped substrate, breakdown voltage of the device is ensured by reasonably setting the total number of impurities in each drift region of the over junction-sustaining voltage layer, and further application thereof in integrated circuits is realized by providing the semiconductor second substrate region and the semiconductor isolation region. A high speed superjunction laterally insulated gate bipolar transistor according to the present disclosure solves the contradiction between cost of the superjunction laterally insulated gate bipolar transistor and achievement of fast turn-off on a bulk silicon substrate.
Chongqing University
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Fang Shengdong Qi Zhi Jianlin Shu Xichuan
Tang Hu Yuan Lin Zhou Han Zhou