Hauptman Ham, LLP
Memory circuit and method of programming memory circuit
A method includes applying a first voltage setting to a memory cell for a first period of time in response to a command for programming a first logical state to the memory cell, obtaining a first stored logical state of the memory cell after the applying the first voltage setting operation, and if the first stored logical state differs from the first logical state, applying a second voltage setting to the memory cell.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Yi-Chieh Tassa Wen-Ting Chih-Yang
Chiu Yang Chu Chang