Limbach & Limbach L.L.P.
Method for forming planarized field isolation regions
 Planarized field isolation regions are formed in a semiconductor substrate to isolate adjacent semiconductor devices by implanting an isolation material, such as oxygen or nitrogen ions, into a substrate patterned to define the field isolation regions. The implanted isolation material combines with the silicon in the substrate to form a field isolation region that extends downward from the surface of the substrate. 
National Semiconductor Corporation
H
H01L
inventional
Chih Sieh Hung Sheng
Teng Chen