Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Substrate treatment method and substrate treatment apparatus
In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.
Toshiba Memory Corporation
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C23F H01L H01L H01L H01L
inventional inventional additional inventional inventional
Hiroshi Yuya Hiroaki Yasuhito Hisashi
Tomita Akeboshi Yamada Yoshimizu Okuchi