J.C. Patents
Resistance type memory device and fabricating method and operating method thereof
A resistance type memory device is provided. The resistance type memory device is disposed on a substrate and includes a tungsten electrode, an upper electrode, and a tungsten oxide layer. The upper electrode is disposed on the tungsten electrode. The tungsten oxide layer is sandwiched between the tungsten electrode and the upper electrode.
MACRONIX International Co., Ltd.
G G H G G Y H H G G G H
G11C G11C H01L G11C G11C Y10S H01L H01L G11C G11C G11C H01L
inventional inventional inventional inventional additional additional inventional inventional inventional additional inventional inventional
Kuang-Yeu Ming-Daou Chia-Hua Erh-Kun
Hsieh Lee Ho Lai