Dicke, Billig & Czaja, PLLC
Memory array structures for capacitive sense NAND memory
Arrays of memory cells a plurality of sense lines each having a respective plurality of pass gates connected in series between a second data line and a source, and having a respective subset of unit column structures capacitively coupled to first channels of its respective plurality of pass gates, wherein, for each sense line of the plurality of sense lines, each unit column structure of its respective subset of unit column structures is connected to a respective first data line of a respective subset of first data lines.
Micron Technology, Inc.
G G G H G G H G G
G11C G11C G11C H01L G11C G11C H01L G11C G11C
additional inventional inventional inventional inventional additional inventional inventional inventional
Jun Masanobu Masashi Shuji Yoshihiko Yoshiaki
Fujiki Saito Yoshida Tanaka Kamata Fukuzumi