McDonnell Boehnen Hulbert & Berghoff LLP
Method for forming a strained semiconductor structure
The present disclosure relates to a method for forming a strained semiconductor structure. The method comprises providing a strain relaxed buffer layer, forming a sacrificial layer on the strain relaxed buffer layer, forming a shallow trench isolation structure through the sacrificial layer, removing at least a portion of an oxide layer on the sacrificial layer, etching through the sacrificial layer such that a portion of the strain relaxed buffer layer is exposed, forming the strained semiconductor structure on the exposed portion of the strain relaxed buffer layer.
IMEC VZW Samsung Electronics Co. Ltd.
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Liesbeth Roger Seung Hun
Witters Loo Lee