Fliesler, Dubb, Meyer & Lovejoy LLP
V.sub.pp only scalable EEPROM memory cell having transistors with thin tunnel gate oxide
 An enhanced, scalable EEPROM memory cell is provided with a structure having a plurality of half-height tunnel oxide depletion mode transistors. The structure further has individual wordlines controlling the write and read transistors, respectively. With such a structure, lower voltages are used to program/erase the memory cell. The memory cell is scalable to small dimensions through the use of transistors having half-height tunnel oxide regions. 
Advanced Micro Devices, Inc.
H G
H01L G11C
inventional inventional
Xiao-Yu Radu
Li Barsan