Harness, Dickey & Pierce, P.L.C.
Method of fabricating a semiconductor device
A method of fabricating a semiconductor device includes forming a channel layer on a substrate, forming a sacrificial layer on the channel layer, forming a hardmask pattern on the sacrificial layer, and performing a patterning process using the hardmask pattern as an etch mask to form a channel portion with an exposed top surface. The channel and sacrificial layers may be formed of silicon germanium, and the sacrificial layer may have a germanium content higher than that of the channel layer.
SAMSUNG ELECTRONICS CO., LTD.
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Seung Hun Jongryeol Poren Bonyoung Hyun Jung Sunjung
Lee Yoo Tang Koo Lee Kim