Maschoff Brennan
Method of forming polysilicon gate structure in image sensor device
A method of fabricating polysilicon gate structure in an image sensor device includes depositing a gate dielectric layer on a surface of a substrate. Then a polysilicon layer is deposited over the gate dielectric layer. Next, a protection film is deposited over the polysilicon layer. A hard mask is formed over the protection film, and the polysilicon gate structure is patterned. Following that, the hard mask is stripped off. The protection film exhibits etching selectivity against the polysilicon layer and has a thickness of between 40 and 60 angstroms. The hard mask is removed by phosphoric acid solution wet etching process.
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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inventional inventional additional inventional
Shyh-Fann Chun-Hao Kai-Chun Kuo-Cheng Chun-Wei
Ting Chou Hsu Lee Chia