Method for fabricating black silicon by using plasma immersion ion implantation
A method for fabricating black silicon by using plasma immersion ion implantation is provided, which includes: putting a silicon wafer into a chamber of a black silicon fabrication apparatus; adjusting processing parameters of the black silicon fabrication apparatus to preset scales; generating plasmas in the chamber of the black silicon fabrication apparatus; implanting reactive ions among the plasmas into the silicon wafer, and forming the black silicon by means of the reaction of the reactive ions and the silicon wafer. The method can form the black silicon which has a strong light absorption property and is sensitive to light, and has advantages of high productivity, low cost and simple production process.
The Institute of Microelectronics of Chinese Academy of Sciences
H H Y C H C Y H
H01L H01L Y02E C30B H01L C30B Y02P H01L
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Chaobo Bangwu Yongtao Yang Minggang Jie
Li Liu Li Xia Wang Liu