Haynes and Boone, LLP
Supercritical developing for a lithographic process
A method of creating a resist image on a semiconductor substrate includes exposing a layer of photoresist on the semiconductor substrate and developing the exposed layer of photoresist using a first fluid including supercritical carbon dioxide and a base such as Tetra-Methyl Ammonium Hydroxide (TMAH). Additionally, the developed photoresist can be cleaned using a second fluid including supercritical carbon dioxide and a solvent such as methanol, ethanol, isopropanol, and xylene.
Taiwan Semiconductor Manufacturing Company, Ltd.
G
G03F
inventional
Burn Jeng Chi-Wen Ching-Yu
Lin Liu Chang