Eschweiler & Potashnik, LLC
Back-side illuminated (BSI) image sensor with global shutter scheme
In some embodiments, the present disclosure relates to a method of forming a back-side image (BSI) sensor. The method may be performed by forming an image sensing element within a substrate and forming a pixel-level memory node at a position within the substrate that is laterally offset from the image sensing element. A back-side of the substrate is etched to form one or more trenches that are laterally separated from the image sensing element by the substrate and that vertically overlie the pixel-level memory node. A reflective material is formed within the one or more trenches.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Wei Chuang Kuan-Tsun Dun-Nian Chun-Yuan Yen-Ting Shyh-Fann Ching-Chun
Wu Chen Yaung Chen Chiang Ting Wang