Fitzpatrick, Cella, Harper & Scinto
Method of forming microcrystalline silicon film, method of fabricating photovoltaic cell using said method, and photovoltaic device fabricated thereby
Disclosed herein is a method of forming a microcrystalline silicon film by using a raw gas containing at least a silicon compound by a high-frequency plasma CVD method, wherein the formation of the film is conducted in such a manner that the residence time, &tgr; (ms) of the raw gas in a film deposition chamber, which is defined as &tgr; (ms)=78.9&times;V&times;P/M, in which V is a volume (cm3) of the deposition chamber, P is a deposition pressure (Torr), and M is a total flow rate (sccm) of the raw gas, satisfies &tgr;<40. The method permits the formation of a good-quality microcrystalline silicon film at low cost.
Canon Kabushiki Kaisha
C H Y C C Y
C23C H01L Y02E C23C C23C Y02P
inventional inventional additional inventional inventional additional
Masafumi Tomonori
Sano Nishimoto