Horizon IP Pte. Ltd.
Implantation-less approach to fabricating strained semiconductor on isolation wafers
A method of fabricating a semiconductor substrate includes forming a buffer layer on the substrate. A Ge containing layer, such as a SiGe is formed over the buffer layer. The buffer layer includes defects at the interface of the substrate and buffer layer. The substrate is oxidized to transform the buffer layer to a buried oxide layer.
Chartered Semiconductor Manufacturing, Ltd.
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Jinping Liang Choo Dong Kyun
Liu Hsia Sohn