Semiconductor memory device and manufacturing method thereof
A semiconductor memory device includes a semiconductor substrate, a first support layer, a first electrode, a capacitor dielectric layer, and a second electrode. The first support layer is disposed on the semiconductor substrate. The first electrode is disposed on the semiconductor substrate and penetrates the first support layer. The capacitor dielectric layer is disposed on the first electrode. The second electrode is disposed on the semiconductor substrate, and at least a part of the capacitor dielectric layer is disposed between the first electrode and the second electrode. The first support layer includes a carbon doped nitride layer, and a carbon concentration of a bottom portion of the first support layer is higher than a carbon concentration of a top portion of the first support layer.
Fujian Jinhua Integrated Circuit Co., Ltd. UNITED MICROELECTRONICS CORP.
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Wei-Hsin Li-Wei Yi-Wei Ying-Chiao Po-Chun Tsung-Ying Chia-Lung Chien-Ting Jui-Min Kai-Ping Wen-Chieh Tzu-Chin
Liu Feng Chen Wang Chen Tsai Chang Ho Lee Chen Lu Wu