Collard & Roe, P.C.
Low temperature poly-silicon thin film transistor and fabrication method thereof, array substrate and display device
A low temperature poly-silicon thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The method comprises: S1: sequentially forming an active layer (3), a gate insulation layer (4), a gate electrode (5) and an interlayer insulation layer (6) on a base substrate (1); S2: forming a first metal thin film layer (8); S3: performing a hydrogenation treatment on the active layer (3) and the gate insulation layer (6); S4: forming a second metal thin film layer (7), the second metal thin film layer (7) being used for forming a source electrode and a drain electrode.
BOE Technology Group Co., Ltd.
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Zheng Xiaolong Liang Xiaoyong Chunping
Liu Li Sun Lu Long