Posz Law Group, PLC
Tunnel magnetoresistance device with tunnel barrier layer containing residual carbon
The TMR device has a structure including a lower electrode layer, a pinned layer, a tunnel barrier layer, a free layer, and an upper electrode layer which are successively formed on a substrate. The tunnel barrier layer has substantially a stoichiometric composition. The tunnel barrier layer may be a thin film of an oxide of AL formed by ALD method.
DENSO CORPORATION
H H G G
H01L H01L G11C G11B
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Yasutoshi Ryonosuke Inao
Suzuki Tera Toyoda