F. Chau & Associates, LLC
Three-dimensional semiconductor memory devices
Three-dimensional (3D) semiconductor memory devices are provided. According to the 3D semiconductor memory device, a gate structure includes gate patterns and insulating patterns alternately stacked on a semiconductor substrate. A vertical active pattern penetrates the gate structure. A gate dielectric layer is disposed between a sidewall of the vertical active pattern and each of the gate patterns. A semiconductor pattern is disposed on the gate structure and is connected to the vertical active pattern. A string drain region is formed in a portion of the semiconductor pattern and is spaced apart from the vertical active pattern.
Samsung Electronics Co., Ltd.
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Jungdal Janggn Kwang Soo
Choi Yun Seol