WPAT, P.C., Intellectual Property Attorneys
Semiconductor structure and manufacturing method of the same
The present disclosure provides a semiconductor structure, including a bottom electrode via, a top surface of the bottom electrode via having a first width, a barrier layer surrounding the bottom electrode via, and a magnetic tunneling junction (MTJ) over the bottom electrode via, a bottom of the MTJ having a second width, the first width being narrower than the second width.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
H H H H
H01L H01L H01L H01L
inventional inventional inventional inventional
Jyu-Horng Qiang Chien Chung Chen-Jung Han-Ting Yu-Shu Sin-Yi Tai-Yen
Shieh Fu Huang Wang Lin Chen Yang Peng