Magnetoresistive random access memory
A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region; a first MTJ on the MTJ region; a first metal interconnection on the logic region; and a cap layer extending from a sidewall of the first MTJ to a sidewall of the first metal interconnection. Preferably, the cap layer on the MTJ region and the cap layer on the logic region comprise different thicknesses.
UNITED MICROELECTRONICS CORP.
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Jing-Yin Che-Wei Chin-Yang Si-Han Hui-Lin Chen-Yi Yu-Ping
Jhang Chang Hsieh Tsai Wang Weng Wang