Eschweiler & Potashnik, LLC
Method and apparatus for reading RRAM cell
The present disclosure, in some embodiments, relates to a method of operating a resistive random access memory (RRAM) array. The method includes applying a word-line voltage to a selected word-line during a read operation. A non-zero voltage is applied to a selected bit-line during the read operation. A first voltage is applied to a selected source-line during the read operation. The first voltage is smaller than a second voltage applied to an unselected source-line during the read operation.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chi-Tsai Sheng-Hung Kuo-Chi Chin-Chieh Chang-Sheng Jen-Sheng Manish Kumar Hsia-Wei Chih-Yang Wen-Ting
Chen Shih Tu Yang Liao Yang Singh Chen Chang Chu