Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Plasma processing apparatus and method
A plasma processing apparatus includes a processing container, an exhaust unit, an exhaust plate, an RF power application unit connected to a second electrode but not connected to the first electrode and configured to apply an RF power with a single frequency, the second electrode being connected to no power supply that applies an RF power other than the RF power with the single frequency, a DC power supply connected to the first electrode but not connected to the second electrode, the first electrode being connected to no power supply that applies an RF power, and a conductive member within the process container grounded to release through plasma a current caused by the DC voltage, the conductive member supported by the first shield part and laterally protruding therefrom only at a position that is located, in a height-wise direction, between a mount face and the exhaust plate and below a bottom of a focus ring.
Tokyo Electron Limited
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Akira Kunihiko Manabu Yoshinobu Chishio Kazuo Toshihiro Ryuji Noriyuki Hiroki Manabu Yohei Masashi Hidetoshi Daisuke Masaru Naoki
Koshiishi Hinata Sato Ohya Koshimizu Kibi Hayami Ohtani Kobayashi Yamazaki Iwata Yamazawa Saito Hanaoka Yano Sugimoto Matsumoto