Slater Matsil, LLP
Semiconductor manufacturing method and tool
An overlay measurement and correction method and device is provided. In an embodiment the measurement device takes measurements of a first semiconductor wafer and uses the measurements in a plurality of correction techniques to generate an overlay correction model. The plurality of correction techniques include a first order correction, a first intra-field high order parameter correction and a first inter-field high order parameter correction. The model is used to adjust the exposure parameters for the exposure of the next semiconductor wafer. The process is repeated on each semiconductor wafer for a run-to-run analysis.
Taiwan Semiconductor Manufacturing Company, Ltd.
G G H G H G
G01N G03F H01L G06F H01L G03F
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Yi-Ping Heng-Hsin Ying Ying Yung-Yao
Hsieh Liu Wang Lee