Slater Matsil, LLP
Semiconductor device and method of forming same
A method includes forming a gate structure over a fin protruding above a substrate, forming a gate spacer layer on sidewalls of the gate structure, forming an etch stop layer on sidewalls of the gate spacer layer, replacing the gate structure with a gate stack, forming a source/drain contact adjacent the etch stop layer, recessing the gate stack to form a first recess, filling the first recess with a first dielectric material, recessing the source/drain contact and the etch stop layer to form a second recess, filling the second recess with a second dielectric material, recessing the second dielectric material and the gate spacer layer to form a third recess, and filling the third recess with a third dielectric material, wherein the composition of the third dielectric material is different from that of the first dielectric material and the second dielectric material.
Taiwan Semiconductor Manufacturing Company, Ltd.
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Chia-Hao Yu-Ming Lin-Yu Cheng-Chi Li-Zhen Chih-Hao
Chang Lin Huang Chuang Yu Wang