Harness, Dickey & Pierce, P.L.C.
Variable resistance memory device and method of forming the same
According to example embodiments, a variable resistance memory device may include memory cells, in which contact areas between word lines and a variable resistance layer are almost constant. The variable resistance memory device may include a vertical electrode on a substrate, horizontal electrode layers and insulating layers sequentially and alternately stacked on the substrate. The horizontal electrode layers and the insulating layers may be adjacent to the vertical electrode. The variable resistance layer may be between the vertical electrode the horizontal electrode layers. A thickness of one of the horizontal electrode layers adjacent to the substrate may be thickness than a thickness of an other of the horizontal electrode layers that is spaced apart from the substrate.
Samsung Electronics Co., Ltd.
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Seok-won
Lee