Craig & Antonelli
Method of producing infrared luminescent diodes
 A recess is formed in one of the principal surfaces of an N-type substrate of GaAs. Through the liquid phase growth technique, a silicon-doped N-type GaAs layer is formed on the one of the principal surfaces and on the surface of the recess and a silicon-doped P-type GaAs layer is continuously formed on the N-type GaAs layer. The liquid-phase-grown GaAs layers are so cut that the PN junction between the layers may be exposed on a plane. 
Hitachi, Ltd.
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Yasutoshi Tadahiko Mitsuru
Kurihara Miyoshi Ura