Yee & Associates
Compact ternary and binary CAM bitcell architecture with no enclosed diffusion areas
Improved layouts of binary and ternary content addressable memory cells (BCAM and TCAM) are shown. A content addressable memory cell layout has a plurality of P+ diffusion areas and a plurality of N+ diffusion areas that do not enclose isolation regions and on which shallow trench isolation stress can exert minimal influence on the drive current of the memories. Further, all transistors in the content addressable memory cell layout are oriented in the same direction to avoid unintended variations in electrical performance. The CAM layouts are “process friendly” to accommodate requirements of advanced process technologies such as the 90 nm process.
LSI Corporation
H H G
H01L H01L G11C
inventional inventional inventional
Ruggero Ramnath Joseph Eugene
Castagnetti Venkatraman Glenn