Fin field effect transistor device and fabrication method thereof
A field effect transistor (FinFET) device includes a substrate, a fin structure, a shallow trench isolation and a gate structure. The fin structure is formed on a surface of the substrate and includes a base fin structure and an epitaxial fin structure formed on the base fin structure. The shallow trench isolation structure is formed on the surface of the substrate and includes a peripheral zone and a concave zone. The peripheral zone physically contacts with the fin structure. The gate structure is disposed on the epitaxial fin structure perpendicularly. A method of fabricating the aforementioned field effect transistor is also provided.
UNITED MICROELECTRONICS CORPORATION
H H H H H
H01L H01L H01L H01L H01L
inventional inventional inventional inventional inventional
Yi-Wei Yu-Hsiang Man-Ling Chung-Fu Yen-Liang Chia-Jong Ssu-I Wen-Jiun
Chen Hung Lu Chang Wu Liu Fu Shen