Method for fabricating vertical light emitting diode (VLED) structure using a laser pulse to remove a carrier substrate
A method for fabricating a vertical light-emitting diode (VLED) structure includes the steps of providing a carrier substrate, and forming a semiconductor structure on the carrier substrate having a p-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-type confinement layer configured to emit electromagnetic radiation, and an n-type confinement layer in electrical contact with the multiple quantum well (MQW) layer. The method also includes the steps of removing the carrier substrate using a laser pulse to expose an inverted surface of the n-type confinement layer, and forming a metal contact on the surface of the n-type confinement layer.
SemiLEDS Optoelectronics Co., Ltd.
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Chen-Fu Chao-Chen Feng-Hsu Hao-Chun Trung Tri Wen-Huang Jiunn-Yi
Chu Cheng Fan Cheng Doan Liu Chu