Haynes and Boone, LLP
Method of fabrication of a semiconductor device having reduced pitch
Provided is a photolithography apparatus including a photomask. The photomask includes a pattern having a plurality of features, in an example, dummy line features. The pattern includes a first region being in the form of a localized on-grid array and a second region where at least one of the features has an increased width. The apparatus may include a second photomask which may define an active region. The feature with an increased width may be adjacent, and outside, the defined active region.
Taiwan Semiconductor Manufacturing Company, Ltd.
H G H G H H
H01L G03F H01L G03F H01L H01L
inventional inventional inventional inventional inventional inventional
Shinn-Sheng Ming-Feng Clement Hsingjen Jeff J. Anthony Shao-Ming Chang-Yun
Yu Shieh Wann Xu Yen Yu Chang