Anova Law Group, PLLC
Fin-FET device and fabrication method thereof
A method for fabricating a Fin-FET device includes forming a plurality of discrete fin structures on a substrate with a bottom portion of the sidewall surfaces covered in an isolation layer, and forming a dielectric layer on the isolation layer and the fin structures with an opening formed across the fin structures and exposing a portion of the isolation layer and the fin structures. The method further includes forming a first oxidation layer on the exposed surfaces of the fin structures, and then forming a second oxidation layer between the first oxidation layer and the surfaces of the fin structures through a first annealing process. The method then includes forming a gate dielectric layer on the first oxidation layer, forming a sacrificial adsorption layer on the gate dielectric layer, performing a second annealing process, and then forming a gate electrode layer to fill the opening formed in the dielectric layer.
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
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Yong
Li