Kilpatrick Townsend & Stockton LLP
Method and structure for top metal formation of liquid crystal on silicon devices
The present invention provides an LCOS device having improved bonding pad features. The device has a substrate, a transistor layer overlying the substrate and an interlayer dielectric layer overlying the transistor layer. A first conductive layer is overlying the interlayer dielectric layer and a second interlayer dielectric layer is overlying the first conductive layer. An enlarged opening for a bonding pad structure is in a first portion of the second interlayer dielectric layer. A barrier metal layer is formed within the enlarged opening to form a liner that covers exposed regions of the enlarged opening. A metal material is overlying the liner to fill the enlarged opening. A thickness of an aluminum material is overlying the metal material. The device has a bonding pad structure formed from a first portion of the thickness of the aluminum material and is coupled to the metal material in the enlarged opening.
Semiconductor Manufacturing International (Shanghai) Corporation
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Nancy Herb Fish Wei Min
Han Huang Ren Li