Heslin Rothenberg Farley & Mesiti P.C.
Devices and methods of forming finFETs with self aligned fin formation
Devices and methods for forming semiconductor devices with FinFETs are provided. One method includes, for instance: obtaining an intermediate semiconductor device with a substrate and at least one shallow trench isolation region; depositing a hard mask layer over the intermediate semiconductor device; etching the hard mask layer to form at least one fin hard mask; and depositing at least one sacrificial gate structure over the at least one fin hard mask and at least a portion of the substrate. One intermediate semiconductor device includes, for instance: a substrate with at least one shallow trench isolation region; at least one fin hard mask over the substrate; at least one sacrificial gate structure over the at least one fin hard mask; at least one spacer disposed on the at least one sacrificial gate structure; and at least one pFET region and at least one nFET region grown into the substrate.
GLOBALFOUNDRIES INC.
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Jin Ping Dae Geun Lun Andy Mariappan Jing Guillaume Churamani Tien-Ying
Liu Yang Zhao Wei Hariharaputhiran Wan Bouche Gaire Luo