Hill & Simpson
Semiconductor exposure device
 A semiconductor light exposure device reducing coherency of laser light to an appropriate value by a simplified structure without producing speckles. The semiconductor light exposure device includes an ultraviolet light generating device, a uniform illumination device having the operation of inducing an optical path length difference and a projection device for projecting the laser light from the uniform illumination device. The ultraviolet light generating device includes an Nd:YAG Q-switch laser unit with a wavelength of 1064 nm, oscillated with a longitudinal single mode, a phase modulation unit or phase-modulating the fundamental laser light outgoing from the Nd:YAG Q-switch laser unit with voltage signals having plural frequency components, and a wavelength conversion unit for converting the wavelength of the fundamental laser light phase-modulated by the phase modulation unit into an ultraviolet laser light with a wavelength of 213 nm as a fifth harmonics. 
Siemens Audiologische Technik GmbH
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Masato Hiroki Yushi
Hamatani Kikuchi Kaneda