Fitzpatrick, Cella, Harper & Scinto
Production method of thin film transistor using amorphous oxide semiconductor film
A production method of a thin film transistor including an active layer including an amorphous oxide semiconductor film, wherein a step of forming the active layer includes a first step of forming the oxide film in an atmosphere having an introduced oxygen partial pressure of 1×10−3 Pa or less, and a second step of annealing the oxide film in an oxidative atmosphere after the first step.
Canon Kabushiki Kaisha
H
H01L
inventional
Masafumi Ryo Nobuyuki Toru Naho
Sano Hayashi Kaji Den Itagaki