Hauptman Ham, LLP
Interconnect structure with twin boundaries and method for forming the same
A semiconductor device structure with twin-boundaries and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive structure formed over the substrate. The conductive structure includes twin boundaries, and a density of the twin boundaries is in a range from about 25 μm−1 to about 250 μm−1.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
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Chwei-Ching Chun-Lung Chien-Neng Jian-Hong Yu-Lun Tsung-Cheng Yung-Huei
Chiu Huang Liao Lin Chueh Chan Lee