Eschweiler & Potashnik, LLC
Selective deposition and planarization for a CMOS image sensor
The present application relates to a method to simplify the scribe line opening filling processes, and to further improve the surface uniformity of the conductive pad fabrication process. A passivation layer is formed over a semiconductor substrate, and a scribe line opening is formed through the passivation layer and the semiconductor substrate. To fill the scribe line opening, a first dielectric layer is formed within the scribe line opening over the conductive pad and extending over the passivation layer. The first dielectric layer is formed by a selective deposition process such that the first dielectric layer is formed on the conductive pad at a deposition rate greater than that formed on the passivation layer.
Taiwan Semiconductor Manufacturing Co., Ltd.
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Cheng-Yuan Cheng-Hsien Sheng-Chau Chih-Hui Sheng-Chan
Tsai Chou Chen Huang Li