William Park & Associates Ltd.
Memory device and operating method thereof for applying a channel precharge voltage to bit lines after a sensing operation
A memory device includes: a memory block, coupled to a plurality of word lines; a peripheral circuit for performing a sensing operation on selected memory cells of the memory block, the select memory cells being coupled to a selected word line of the plurality of word lines; a word line voltage controller for controlling a sensing voltage applied to the selected word line to perform the sensing operation on the selected memory cells and configured to control a pass voltage applied to the selected word line and unselected word lines of the plurality of word lines, coupled to the memory block; and a bit line control signal generator for controlling the peripheral circuit to apply a channel precharge voltage to respective bit lines, coupled to the selected memory cells, while the pass voltage is being applied to the selected word line and the unselected word lines.
SK hynix Inc.
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Ji Hwan Kwang Ho Jung Mi Jung Hwan Young Don
Kim Baek Ko Lee Jung