Haynes and Boone, LLP
Double patterning strategy for contact hole and trench in photolithography
A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including a plurality of openings therein on the substrate; forming a second resist pattern on the substrate and within the plurality of openings of the first resist pattern, the second resist pattern including at least one opening therein on the substrate; and removing the first resist pattern to uncover the substrate underlying the first resist pattern.
Taiwan Semiconductor Manufacturing Company, Ltd.
H H
H01L H01L
inventional inventional
Feng-Cheng Jian-Hong
Hsu Chen